WO2003008139A3 - Etching process for micromachining crystalline materials and devices fabricated thereby - Google Patents
Etching process for micromachining crystalline materials and devices fabricated thereby Download PDFInfo
- Publication number
- WO2003008139A3 WO2003008139A3 PCT/US2002/023177 US0223177W WO03008139A3 WO 2003008139 A3 WO2003008139 A3 WO 2003008139A3 US 0223177 W US0223177 W US 0223177W WO 03008139 A3 WO03008139 A3 WO 03008139A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- micromachining
- etching process
- crystalline materials
- devices fabricated
- fabricated
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4204—Packages, e.g. shape, construction, internal or external details the coupling comprising intermediate optical elements, e.g. lenses, holograms
- G02B6/4206—Optical features
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
- G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
- G02B2006/12166—Manufacturing methods
- G02B2006/12176—Etching
-
- G—PHYSICS
- G02—OPTICS
- G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
- G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
- G02B6/24—Coupling light guides
- G02B6/42—Coupling light guides with opto-electronic elements
- G02B6/4201—Packages, e.g. shape, construction, internal or external details
- G02B6/4219—Mechanical fixtures for holding or positioning the elements relative to each other in the couplings; Alignment methods for the elements, e.g. measuring or observing methods especially used therefor
- G02B6/4234—Passive alignment along the optical axis and active alignment perpendicular to the optical axis
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
- H01L21/30608—Anisotropic liquid etching
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR10-2004-7000893A KR20040017339A (en) | 2001-07-19 | 2002-07-19 | Etching process for micromachining crystilline materials and devices fabricated thereby |
JP2003513732A JP2004535304A (en) | 2001-07-19 | 2002-07-19 | Etching process for micromachining of crystalline materials and devices produced thereby |
EP02756559A EP1414609A4 (en) | 2001-07-19 | 2002-07-19 | Etching process for micromachining crystalline materials and devices fabricated thereby |
AU2002322561A AU2002322561A1 (en) | 2001-07-19 | 2002-07-19 | Etching process for micromachining crystalline materials and devices fabricated thereby |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US30656801P | 2001-07-19 | 2001-07-19 | |
US60/306,568 | 2001-07-19 | ||
US10/071,261 US6885786B2 (en) | 2001-02-07 | 2002-02-07 | Combined wet and dry etching process for micromachining of crystalline materials |
US10/071,261 | 2002-02-07 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003008139A2 WO2003008139A2 (en) | 2003-01-30 |
WO2003008139A3 true WO2003008139A3 (en) | 2003-11-27 |
Family
ID=26752026
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/023177 WO2003008139A2 (en) | 2001-07-19 | 2002-07-19 | Etching process for micromachining crystalline materials and devices fabricated thereby |
Country Status (6)
Country | Link |
---|---|
EP (1) | EP1414609A4 (en) |
JP (1) | JP2004535304A (en) |
KR (1) | KR20040017339A (en) |
CN (1) | CN1545732A (en) |
AU (1) | AU2002322561A1 (en) |
WO (1) | WO2003008139A2 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6907150B2 (en) | 2001-02-07 | 2005-06-14 | Shipley Company, L.L.C. | Etching process for micromachining crystalline materials and devices fabricated thereby |
US6885786B2 (en) | 2001-02-07 | 2005-04-26 | Shipley Company, L.L.C. | Combined wet and dry etching process for micromachining of crystalline materials |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4706061A (en) * | 1986-08-28 | 1987-11-10 | Honeywell Inc. | Composition sensor with minimal non-linear thermal gradients |
US4784721A (en) * | 1988-02-22 | 1988-11-15 | Honeywell Inc. | Integrated thin-film diaphragm; backside etch |
US5760305A (en) * | 1990-10-17 | 1998-06-02 | The Charles Stark Draper Laboratory, Inc. | Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE58909602D1 (en) * | 1989-09-22 | 1996-03-21 | Siemens Ag | Process for anisotropic etching of silicon |
JP3205103B2 (en) * | 1993-01-07 | 2001-09-04 | 松下電器産業株式会社 | Method for manufacturing semiconductor device |
US6020272A (en) * | 1998-10-08 | 2000-02-01 | Sandia Corporation | Method for forming suspended micromechanical structures |
US6215946B1 (en) * | 2000-03-16 | 2001-04-10 | Act Microdevices, Inc. | V-groove chip with wick-stop trench for improved fiber positioning |
-
2002
- 2002-07-19 JP JP2003513732A patent/JP2004535304A/en active Pending
- 2002-07-19 KR KR10-2004-7000893A patent/KR20040017339A/en active IP Right Grant
- 2002-07-19 EP EP02756559A patent/EP1414609A4/en not_active Withdrawn
- 2002-07-19 WO PCT/US2002/023177 patent/WO2003008139A2/en active Application Filing
- 2002-07-19 CN CNA028163761A patent/CN1545732A/en active Pending
- 2002-07-19 AU AU2002322561A patent/AU2002322561A1/en not_active Abandoned
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4706061A (en) * | 1986-08-28 | 1987-11-10 | Honeywell Inc. | Composition sensor with minimal non-linear thermal gradients |
US4784721A (en) * | 1988-02-22 | 1988-11-15 | Honeywell Inc. | Integrated thin-film diaphragm; backside etch |
US5760305A (en) * | 1990-10-17 | 1998-06-02 | The Charles Stark Draper Laboratory, Inc. | Monolithic micromechanical vibrating beam accelerometer with trimmable resonant frequency |
Non-Patent Citations (1)
Title |
---|
See also references of EP1414609A4 * |
Also Published As
Publication number | Publication date |
---|---|
EP1414609A4 (en) | 2012-03-28 |
JP2004535304A (en) | 2004-11-25 |
KR20040017339A (en) | 2004-02-26 |
CN1545732A (en) | 2004-11-10 |
EP1414609A2 (en) | 2004-05-06 |
WO2003008139A2 (en) | 2003-01-30 |
AU2002322561A1 (en) | 2003-03-03 |
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