WO2003021692A3 - Mutliple layer phase-change memory - Google Patents

Mutliple layer phase-change memory Download PDF

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Publication number
WO2003021692A3
WO2003021692A3 PCT/US2002/026374 US0226374W WO03021692A3 WO 2003021692 A3 WO2003021692 A3 WO 2003021692A3 US 0226374 W US0226374 W US 0226374W WO 03021692 A3 WO03021692 A3 WO 03021692A3
Authority
WO
WIPO (PCT)
Prior art keywords
change memory
mutliple
phase
layer phase
change
Prior art date
Application number
PCT/US2002/026374
Other languages
French (fr)
Other versions
WO2003021692A2 (en
Inventor
Stephen J Hudgens
Tyler A Lowrey
Patrick J Klersy
Original Assignee
Intel Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Intel Corp filed Critical Intel Corp
Priority to KR1020047002915A priority Critical patent/KR100594849B1/en
Priority to DE10297115T priority patent/DE10297115B4/en
Publication of WO2003021692A2 publication Critical patent/WO2003021692A2/en
Publication of WO2003021692A3 publication Critical patent/WO2003021692A3/en

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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/8615—Hi-lo semiconductor devices, e.g. memory devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H10N70/061—Patterning of the switching material
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/861—Thermal details
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe

Abstract

A phase-change memory (10) may be formed with at least two phase-change material layers (22, 26) separated by a barrier layer (24). The use of more than one phase-change layer (22, 26) enables a reduction in the programming volume while still providing adequate thermal insulation.
PCT/US2002/026374 2001-08-31 2002-08-20 Mutliple layer phase-change memory WO2003021692A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1020047002915A KR100594849B1 (en) 2001-08-31 2002-08-20 Multiple layer phase-change memory
DE10297115T DE10297115B4 (en) 2001-08-31 2002-08-20 Multi-layered phase change memory, in particular memory cell and method for the production

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/945,331 2001-08-31
US09/945,331 US6507061B1 (en) 2001-08-31 2001-08-31 Multiple layer phase-change memory

Publications (2)

Publication Number Publication Date
WO2003021692A2 WO2003021692A2 (en) 2003-03-13
WO2003021692A3 true WO2003021692A3 (en) 2004-02-12

Family

ID=25482976

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/026374 WO2003021692A2 (en) 2001-08-31 2002-08-20 Mutliple layer phase-change memory

Country Status (6)

Country Link
US (3) US6507061B1 (en)
KR (1) KR100594849B1 (en)
CN (1) CN100470869C (en)
DE (1) DE10297115B4 (en)
TW (1) TW594989B (en)
WO (1) WO2003021692A2 (en)

Families Citing this family (298)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7935951B2 (en) * 1996-10-28 2011-05-03 Ovonyx, Inc. Composite chalcogenide materials and devices
US6638820B2 (en) 2001-02-08 2003-10-28 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of precluding diffusion of a metal into adjacent chalcogenide material, and chalcogenide comprising devices
JP4742429B2 (en) * 2001-02-19 2011-08-10 住友電気工業株式会社 Method for producing glass particulate deposit
US6727192B2 (en) * 2001-03-01 2004-04-27 Micron Technology, Inc. Methods of metal doping a chalcogenide material
US6734455B2 (en) * 2001-03-15 2004-05-11 Micron Technology, Inc. Agglomeration elimination for metal sputter deposition of chalcogenides
US7102150B2 (en) * 2001-05-11 2006-09-05 Harshfield Steven T PCRAM memory cell and method of making same
US6951805B2 (en) * 2001-08-01 2005-10-04 Micron Technology, Inc. Method of forming integrated circuitry, method of forming memory circuitry, and method of forming random access memory circuitry
US6784018B2 (en) * 2001-08-29 2004-08-31 Micron Technology, Inc. Method of forming chalcogenide comprising devices and method of forming a programmable memory cell of memory circuitry
US6881623B2 (en) * 2001-08-29 2005-04-19 Micron Technology, Inc. Method of forming chalcogenide comprising devices, method of forming a programmable memory cell of memory circuitry, and a chalcogenide comprising device
US6955940B2 (en) * 2001-08-29 2005-10-18 Micron Technology, Inc. Method of forming chalcogenide comprising devices
US6448576B1 (en) * 2001-08-30 2002-09-10 Bae Systems Information And Electronic Systems Integration, Inc. Programmable chalcogenide fuse within a semiconductor device
US6709958B2 (en) * 2001-08-30 2004-03-23 Micron Technology, Inc. Integrated circuit device and fabrication using metal-doped chalcogenide materials
US20030047765A1 (en) * 2001-08-30 2003-03-13 Campbell Kristy A. Stoichiometry for chalcogenide glasses useful for memory devices and method of formation
US6507061B1 (en) * 2001-08-31 2003-01-14 Intel Corporation Multiple layer phase-change memory
US6586761B2 (en) * 2001-09-07 2003-07-01 Intel Corporation Phase change material memory device
US7319057B2 (en) * 2001-10-30 2008-01-15 Ovonyx, Inc. Phase change material memory device
US6815818B2 (en) * 2001-11-19 2004-11-09 Micron Technology, Inc. Electrode structure for use in an integrated circuit
US6791859B2 (en) * 2001-11-20 2004-09-14 Micron Technology, Inc. Complementary bit PCRAM sense amplifier and method of operation
US6873538B2 (en) * 2001-12-20 2005-03-29 Micron Technology, Inc. Programmable conductor random access memory and a method for writing thereto
US6909656B2 (en) * 2002-01-04 2005-06-21 Micron Technology, Inc. PCRAM rewrite prevention
US20030143782A1 (en) * 2002-01-31 2003-07-31 Gilton Terry L. Methods of forming germanium selenide comprising devices and methods of forming silver selenide comprising structures
US6867064B2 (en) * 2002-02-15 2005-03-15 Micron Technology, Inc. Method to alter chalcogenide glass for improved switching characteristics
US6791885B2 (en) * 2002-02-19 2004-09-14 Micron Technology, Inc. Programmable conductor random access memory and method for sensing same
US7087919B2 (en) * 2002-02-20 2006-08-08 Micron Technology, Inc. Layered resistance variable memory device and method of fabrication
US6809362B2 (en) * 2002-02-20 2004-10-26 Micron Technology, Inc. Multiple data state memory cell
US7151273B2 (en) * 2002-02-20 2006-12-19 Micron Technology, Inc. Silver-selenide/chalcogenide glass stack for resistance variable memory
US6891749B2 (en) * 2002-02-20 2005-05-10 Micron Technology, Inc. Resistance variable ‘on ’ memory
US6937528B2 (en) * 2002-03-05 2005-08-30 Micron Technology, Inc. Variable resistance memory and method for sensing same
US6849868B2 (en) * 2002-03-14 2005-02-01 Micron Technology, Inc. Methods and apparatus for resistance variable material cells
US6855975B2 (en) * 2002-04-10 2005-02-15 Micron Technology, Inc. Thin film diode integrated with chalcogenide memory cell
US6858482B2 (en) * 2002-04-10 2005-02-22 Micron Technology, Inc. Method of manufacture of programmable switching circuits and memory cells employing a glass layer
US6864500B2 (en) * 2002-04-10 2005-03-08 Micron Technology, Inc. Programmable conductor memory cell structure
KR100437458B1 (en) 2002-05-07 2004-06-23 삼성전자주식회사 Phase change memory cells and methods of fabricating the same
US6734533B2 (en) * 2002-05-30 2004-05-11 Intel Corporation Electron-beam treated CDO films
US6825135B2 (en) * 2002-06-06 2004-11-30 Micron Technology, Inc. Elimination of dendrite formation during metal/chalcogenide glass deposition
US6890790B2 (en) * 2002-06-06 2005-05-10 Micron Technology, Inc. Co-sputter deposition of metal-doped chalcogenides
US7015494B2 (en) * 2002-07-10 2006-03-21 Micron Technology, Inc. Assemblies displaying differential negative resistance
JP4027282B2 (en) * 2002-07-10 2007-12-26 キヤノン株式会社 Inkjet recording head
US7209378B2 (en) * 2002-08-08 2007-04-24 Micron Technology, Inc. Columnar 1T-N memory cell structure
US6872963B2 (en) * 2002-08-08 2005-03-29 Ovonyx, Inc. Programmable resistance memory element with layered memory material
US7018863B2 (en) * 2002-08-22 2006-03-28 Micron Technology, Inc. Method of manufacture of a resistance variable memory cell
US6831019B1 (en) * 2002-08-29 2004-12-14 Micron Technology, Inc. Plasma etching methods and methods of forming memory devices comprising a chalcogenide comprising layer received operably proximate conductive electrodes
US6864521B2 (en) * 2002-08-29 2005-03-08 Micron Technology, Inc. Method to control silver concentration in a resistance variable memory element
US7364644B2 (en) * 2002-08-29 2008-04-29 Micron Technology, Inc. Silver selenide film stoichiometry and morphology control in sputter deposition
US7010644B2 (en) * 2002-08-29 2006-03-07 Micron Technology, Inc. Software refreshed memory device and method
US6856002B2 (en) * 2002-08-29 2005-02-15 Micron Technology, Inc. Graded GexSe100-x concentration in PCRAM
US7163837B2 (en) * 2002-08-29 2007-01-16 Micron Technology, Inc. Method of forming a resistance variable memory element
US6867114B2 (en) * 2002-08-29 2005-03-15 Micron Technology Inc. Methods to form a memory cell with metal-rich metal chalcogenide
US20040040837A1 (en) * 2002-08-29 2004-03-04 Mcteer Allen Method of forming chalcogenide sputter target
US6867996B2 (en) * 2002-08-29 2005-03-15 Micron Technology, Inc. Single-polarity programmable resistance-variable memory element
JP3978541B2 (en) * 2002-09-25 2007-09-19 現代自動車株式会社 Engine cylinder head cover and method of assembling the same
KR100481866B1 (en) * 2002-11-01 2005-04-11 삼성전자주식회사 Phase changeable memory device and method of fabricating the same
DE10255117A1 (en) * 2002-11-26 2004-06-17 Infineon Technologies Ag Semiconductor memory device and method for its production
US7049623B2 (en) * 2002-12-13 2006-05-23 Ovonyx, Inc. Vertical elevated pore phase change memory
ATE490562T1 (en) * 2002-12-19 2010-12-15 Nxp Bv ELECTRICAL COMPONENT HAVING A LAYER OF PHASE CHANGE MATERIAL AND METHOD FOR PRODUCING IT
US7115927B2 (en) * 2003-02-24 2006-10-03 Samsung Electronics Co., Ltd. Phase changeable memory devices
US7402851B2 (en) * 2003-02-24 2008-07-22 Samsung Electronics Co., Ltd. Phase changeable memory devices including nitrogen and/or silicon and methods for fabricating the same
US7425735B2 (en) * 2003-02-24 2008-09-16 Samsung Electronics Co., Ltd. Multi-layer phase-changeable memory devices
KR100543445B1 (en) 2003-03-04 2006-01-23 삼성전자주식회사 Phase change memory device and method of forming the same
US6813178B2 (en) 2003-03-12 2004-11-02 Micron Technology, Inc. Chalcogenide glass constant current device, and its method of fabrication and operation
US7022579B2 (en) * 2003-03-14 2006-04-04 Micron Technology, Inc. Method for filling via with metal
US7050327B2 (en) * 2003-04-10 2006-05-23 Micron Technology, Inc. Differential negative resistance memory
US20060006472A1 (en) * 2003-06-03 2006-01-12 Hai Jiang Phase change memory with extra-small resistors
US6930909B2 (en) * 2003-06-25 2005-08-16 Micron Technology, Inc. Memory device and methods of controlling resistance variation and resistance profile drift
US6961277B2 (en) 2003-07-08 2005-11-01 Micron Technology, Inc. Method of refreshing a PCRAM memory device
US7061004B2 (en) * 2003-07-21 2006-06-13 Micron Technology, Inc. Resistance variable memory elements and methods of formation
KR100615586B1 (en) * 2003-07-23 2006-08-25 삼성전자주식회사 Phase change memory device including localized phase transition area in porous dielectric layer and method of forming the same
US20050029504A1 (en) * 2003-08-04 2005-02-10 Karpov Ilya V. Reducing parasitic conductive paths in phase change memories
US6903361B2 (en) * 2003-09-17 2005-06-07 Micron Technology, Inc. Non-volatile memory structure
JP4567963B2 (en) * 2003-12-05 2010-10-27 ルネサスエレクトロニクス株式会社 Semiconductor integrated circuit device
US7943919B2 (en) * 2003-12-10 2011-05-17 International Business Machines Corporation Integrated circuit with upstanding stylus
US7928420B2 (en) * 2003-12-10 2011-04-19 International Business Machines Corporation Phase change tip storage cell
KR100568511B1 (en) * 2003-12-30 2006-04-07 삼성전자주식회사 Semiconductor Devices Having A Phase-Change Layer Pattern And Fabrication Methods Thereof
US7153721B2 (en) * 2004-01-28 2006-12-26 Micron Technology, Inc. Resistance variable memory elements based on polarized silver-selenide network growth
US7105864B2 (en) * 2004-01-29 2006-09-12 Micron Technology, Inc. Non-volatile zero field splitting resonance memory
US6936840B2 (en) * 2004-01-30 2005-08-30 International Business Machines Corporation Phase-change memory cell and method of fabricating the phase-change memory cell
US7718987B2 (en) * 2004-02-19 2010-05-18 Agency For Science, Technology And Research Electrically writable and erasable memory medium having a data element with two or more multiple-layer structures made of individual layers
US7098068B2 (en) * 2004-03-10 2006-08-29 Micron Technology, Inc. Method of forming a chalcogenide material containing device
US7583551B2 (en) * 2004-03-10 2009-09-01 Micron Technology, Inc. Power management control and controlling memory refresh operations
US7354793B2 (en) 2004-08-12 2008-04-08 Micron Technology, Inc. Method of forming a PCRAM device incorporating a resistance-variable chalocogenide element
US7326950B2 (en) 2004-07-19 2008-02-05 Micron Technology, Inc. Memory device with switching glass layer
US7190048B2 (en) * 2004-07-19 2007-03-13 Micron Technology, Inc. Resistance variable memory device and method of fabrication
DE102004035830A1 (en) * 2004-07-23 2006-02-16 Infineon Technologies Ag Memory device with thermal insulation layers
CN1300839C (en) * 2004-08-06 2007-02-14 中国科学院上海微系统与信息技术研究所 Process for preparing nano electronic phase change storage
US7365411B2 (en) 2004-08-12 2008-04-29 Micron Technology, Inc. Resistance variable memory with temperature tolerant materials
KR100566699B1 (en) 2004-08-17 2006-04-03 삼성전자주식회사 Phase-changeable memory device and method of manufacturing the same
KR100653701B1 (en) 2004-08-20 2006-12-04 삼성전자주식회사 Method of forming a small via structure in a semiconductor device and method of fabricating phase change memory device using the same
US7151688B2 (en) * 2004-09-01 2006-12-19 Micron Technology, Inc. Sensing of resistance variable memory devices
KR100663348B1 (en) * 2004-09-02 2007-01-02 삼성전자주식회사 Prams having a phase-change layer pattern inserted between a molding layer and a forming layer pattern and methods of forming the same
TWI254443B (en) * 2004-10-08 2006-05-01 Ind Tech Res Inst Multilevel phase-change memory, manufacture method and status transferring method thereof
US7364935B2 (en) * 2004-10-29 2008-04-29 Macronix International Co., Ltd. Common word line edge contact phase-change memory
US20060131555A1 (en) * 2004-12-22 2006-06-22 Micron Technology, Inc. Resistance variable devices with controllable channels
US7374174B2 (en) * 2004-12-22 2008-05-20 Micron Technology, Inc. Small electrode for resistance variable devices
DE602004013816D1 (en) * 2004-12-30 2008-06-26 St Microelectronics Srl Phase change memory and manufacturing method for it
EP1677371A1 (en) 2004-12-30 2006-07-05 STMicroelectronics S.r.l. Dual resistance heater for phase change devices and manufacturing method thereof
US7214958B2 (en) 2005-02-10 2007-05-08 Infineon Technologies Ag Phase change memory cell with high read margin at low power operation
US7361925B2 (en) * 2005-02-10 2008-04-22 Infineon Technologies Ag Integrated circuit having a memory including a low-k dielectric material for thermal isolation
US7317200B2 (en) 2005-02-23 2008-01-08 Micron Technology, Inc. SnSe-based limited reprogrammable cell
KR100682939B1 (en) * 2005-03-16 2007-02-15 삼성전자주식회사 Semiconductor memory device with three dimensional solid electrolyte structure and manufacturing method thereof
KR100657956B1 (en) * 2005-04-06 2006-12-14 삼성전자주식회사 Multi-bit memory device having resistive material layers as storage node and methods of manufacturing and operating the same
US8653495B2 (en) * 2005-04-11 2014-02-18 Micron Technology, Inc. Heating phase change material
US7709289B2 (en) * 2005-04-22 2010-05-04 Micron Technology, Inc. Memory elements having patterned electrodes and method of forming the same
US7427770B2 (en) * 2005-04-22 2008-09-23 Micron Technology, Inc. Memory array for increased bit density
US7269044B2 (en) * 2005-04-22 2007-09-11 Micron Technology, Inc. Method and apparatus for accessing a memory array
US7269079B2 (en) * 2005-05-16 2007-09-11 Micron Technology, Inc. Power circuits for reducing a number of power supply voltage taps required for sensing a resistive memory
US8237140B2 (en) 2005-06-17 2012-08-07 Macronix International Co., Ltd. Self-aligned, embedded phase change RAM
US7696503B2 (en) * 2005-06-17 2010-04-13 Macronix International Co., Ltd. Multi-level memory cell having phase change element and asymmetrical thermal boundary
US7233520B2 (en) * 2005-07-08 2007-06-19 Micron Technology, Inc. Process for erasing chalcogenide variable resistance memory bits
US7274034B2 (en) * 2005-08-01 2007-09-25 Micron Technology, Inc. Resistance variable memory device with sputtered metal-chalcogenide region and method of fabrication
US7317567B2 (en) * 2005-08-02 2008-01-08 Micron Technology, Inc. Method and apparatus for providing color changing thin film material
US7332735B2 (en) * 2005-08-02 2008-02-19 Micron Technology, Inc. Phase change memory cell and method of formation
US7767992B2 (en) * 2005-08-09 2010-08-03 Ovonyx, Inc. Multi-layer chalcogenide devices
US7579615B2 (en) 2005-08-09 2009-08-25 Micron Technology, Inc. Access transistor for memory device
US20080042119A1 (en) * 2005-08-09 2008-02-21 Ovonyx, Inc. Multi-layered chalcogenide and related devices having enhanced operational characteristics
US20070037316A1 (en) * 2005-08-09 2007-02-15 Micron Technology, Inc. Memory cell contact using spacers
US7304368B2 (en) * 2005-08-11 2007-12-04 Micron Technology, Inc. Chalcogenide-based electrokinetic memory element and method of forming the same
US7251154B2 (en) * 2005-08-15 2007-07-31 Micron Technology, Inc. Method and apparatus providing a cross-point memory array using a variable resistance memory cell and capacitance
KR100676204B1 (en) * 2005-08-25 2007-01-30 삼성전자주식회사 Memory cell transistor for eeprom
KR100637235B1 (en) * 2005-08-26 2006-10-20 삼성에스디아이 주식회사 Plasma display panel
US7277313B2 (en) * 2005-08-31 2007-10-02 Micron Technology, Inc. Resistance variable memory element with threshold device and method of forming the same
US7615770B2 (en) * 2005-10-27 2009-11-10 Infineon Technologies Ag Integrated circuit having an insulated memory
US9127362B2 (en) 2005-10-31 2015-09-08 Applied Materials, Inc. Process kit and target for substrate processing chamber
WO2007053581A2 (en) * 2005-11-01 2007-05-10 Sideromics, Llc Growth control of oral and superficial microorganisms using gallium compounds
US7973384B2 (en) * 2005-11-02 2011-07-05 Qimonda Ag Phase change memory cell including multiple phase change material portions
US7786460B2 (en) 2005-11-15 2010-08-31 Macronix International Co., Ltd. Phase change memory device and manufacturing method
US7394088B2 (en) 2005-11-15 2008-07-01 Macronix International Co., Ltd. Thermally contained/insulated phase change memory device and method (combined)
US7635855B2 (en) * 2005-11-15 2009-12-22 Macronix International Co., Ltd. I-shaped phase change memory cell
US7414258B2 (en) 2005-11-16 2008-08-19 Macronix International Co., Ltd. Spacer electrode small pin phase change memory RAM and manufacturing method
US7449710B2 (en) 2005-11-21 2008-11-11 Macronix International Co., Ltd. Vacuum jacket for phase change memory element
US7829876B2 (en) * 2005-11-21 2010-11-09 Macronix International Co., Ltd. Vacuum cell thermal isolation for a phase change memory device
US7479649B2 (en) * 2005-11-21 2009-01-20 Macronix International Co., Ltd. Vacuum jacketed electrode for phase change memory element
US8790499B2 (en) * 2005-11-25 2014-07-29 Applied Materials, Inc. Process kit components for titanium sputtering chamber
US7459717B2 (en) 2005-11-28 2008-12-02 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
US7688619B2 (en) 2005-11-28 2010-03-30 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
GB2433647B (en) 2005-12-20 2008-05-28 Univ Southampton Phase change memory materials, devices and methods
US7531825B2 (en) * 2005-12-27 2009-05-12 Macronix International Co., Ltd. Method for forming self-aligned thermal isolation cell for a variable resistance memory array
US8062833B2 (en) 2005-12-30 2011-11-22 Macronix International Co., Ltd. Chalcogenide layer etching method
US7560337B2 (en) * 2006-01-09 2009-07-14 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US7741636B2 (en) 2006-01-09 2010-06-22 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US7714315B2 (en) * 2006-02-07 2010-05-11 Qimonda North America Corp. Thermal isolation of phase change memory cells
US7956358B2 (en) * 2006-02-07 2011-06-07 Macronix International Co., Ltd. I-shaped phase change memory cell with thermal isolation
KR101004207B1 (en) * 2006-03-09 2010-12-24 파나소닉 주식회사 Resistance-varying type element, semiconductor device, and method for manufacturing the element
US7498655B2 (en) * 2006-03-28 2009-03-03 Intel Corporation Probe-based memory
US7608848B2 (en) 2006-05-09 2009-10-27 Macronix International Co., Ltd. Bridge resistance random access memory device with a singular contact structure
KR101499260B1 (en) * 2006-05-12 2015-03-05 어드밴스드 테크놀러지 머티리얼즈, 인코포레이티드 low temperature deposition of phase change memory materials
KR100782482B1 (en) * 2006-05-19 2007-12-05 삼성전자주식회사 Phase change memory cell employing a GeBiTe layer as a phase change material layer, phase change memory device including the same, electronic device including the same and method of fabricating the same
KR100748557B1 (en) * 2006-05-26 2007-08-10 삼성전자주식회사 Phase-change memory device
US7732800B2 (en) * 2006-05-30 2010-06-08 Macronix International Co., Ltd. Resistor random access memory cell with L-shaped electrode
US7473921B2 (en) * 2006-06-07 2009-01-06 International Business Machines Corporation Nonvolatile memory cell with concentric phase change material formed around a pillar arrangement
JP4437297B2 (en) * 2006-06-22 2010-03-24 エルピーダメモリ株式会社 Semiconductor memory device and manufacturing method of semiconductor memory device
US7785920B2 (en) 2006-07-12 2010-08-31 Macronix International Co., Ltd. Method for making a pillar-type phase change memory element
US20080019257A1 (en) * 2006-07-18 2008-01-24 Jan Boris Philipp Integrated circuit with resistivity changing material having a step-like programming characteristitic
US8084799B2 (en) * 2006-07-18 2011-12-27 Qimonda Ag Integrated circuit with memory having a step-like programming characteristic
US7688618B2 (en) * 2006-07-18 2010-03-30 Qimonda North America Corp. Integrated circuit having memory having a step-like programming characteristic
US7560723B2 (en) 2006-08-29 2009-07-14 Micron Technology, Inc. Enhanced memory density resistance variable memory cells, arrays, devices and systems including the same, and methods of fabrication
US7772581B2 (en) * 2006-09-11 2010-08-10 Macronix International Co., Ltd. Memory device having wide area phase change element and small electrode contact area
KR100810615B1 (en) * 2006-09-20 2008-03-06 삼성전자주식회사 Phase change memory device having high temp phase change pattern and method of fabricating the same
JP2008085204A (en) * 2006-09-28 2008-04-10 Toshiba Corp Semiconductor memory device, and its manufacturing method
US8766224B2 (en) 2006-10-03 2014-07-01 Hewlett-Packard Development Company, L.P. Electrically actuated switch
US7504653B2 (en) 2006-10-04 2009-03-17 Macronix International Co., Ltd. Memory cell device with circumferentially-extending memory element
US7863655B2 (en) 2006-10-24 2011-01-04 Macronix International Co., Ltd. Phase change memory cells with dual access devices
EP2078102B1 (en) 2006-11-02 2012-11-14 Advanced Technology Materials, Inc. Antimony and germanium complexes useful for cvd/ald of metal thin films
US8067762B2 (en) 2006-11-16 2011-11-29 Macronix International Co., Ltd. Resistance random access memory structure for enhanced retention
US7476587B2 (en) 2006-12-06 2009-01-13 Macronix International Co., Ltd. Method for making a self-converged memory material element for memory cell
US7903447B2 (en) 2006-12-13 2011-03-08 Macronix International Co., Ltd. Method, apparatus and computer program product for read before programming process on programmable resistive memory cell
KR20080055508A (en) * 2006-12-15 2008-06-19 삼성전자주식회사 Phase change layer having different crystal lattice in single layer and method of forming the same and phase change memory device comprising means for preventing ti diffusion and method of manufacturing the same
US8017930B2 (en) * 2006-12-21 2011-09-13 Qimonda Ag Pillar phase change memory cell
US7718989B2 (en) * 2006-12-28 2010-05-18 Macronix International Co., Ltd. Resistor random access memory cell device
US8426967B2 (en) * 2007-01-05 2013-04-23 International Business Machines Corporation Scaled-down phase change memory cell in recessed heater
US20080164453A1 (en) * 2007-01-07 2008-07-10 Breitwisch Matthew J Uniform critical dimension size pore for pcram application
KR100885184B1 (en) 2007-01-30 2009-02-23 삼성전자주식회사 Memory Devices Having Resistance Property Capable Of Being Independently Controlled By Electric And Magnetic Fields And Methods Of Operating The Same
JP5147249B2 (en) * 2007-01-31 2013-02-20 オンセミコンダクター・トレーディング・リミテッド Manufacturing method of semiconductor device
US7619311B2 (en) * 2007-02-02 2009-11-17 Macronix International Co., Ltd. Memory cell device with coplanar electrode surface and method
US8138028B2 (en) 2007-02-12 2012-03-20 Macronix International Co., Ltd Method for manufacturing a phase change memory device with pillar bottom electrode
US7884343B2 (en) 2007-02-14 2011-02-08 Macronix International Co., Ltd. Phase change memory cell with filled sidewall memory element and method for fabricating the same
US7956344B2 (en) 2007-02-27 2011-06-07 Macronix International Co., Ltd. Memory cell with memory element contacting ring-shaped upper end of bottom electrode
US7786461B2 (en) * 2007-04-03 2010-08-31 Macronix International Co., Ltd. Memory structure with reduced-size memory element between memory material portions
US8373148B2 (en) * 2007-04-26 2013-02-12 Spansion Llc Memory device with improved performance
US7719886B2 (en) * 2007-05-03 2010-05-18 Qimonda North America Corp. Multi-level resistive memory cell using different crystallization speeds
KR101350979B1 (en) * 2007-05-11 2014-01-14 삼성전자주식회사 Resistive memory device and Manufacturing Method for the same
US7671353B2 (en) * 2007-06-04 2010-03-02 Qimonda North America Corp. Integrated circuit having contact including material between sidewalls
US8410607B2 (en) * 2007-06-15 2013-04-02 Taiwan Semiconductor Manufacturing Co., Ltd. Semiconductor memory structures
US8968536B2 (en) * 2007-06-18 2015-03-03 Applied Materials, Inc. Sputtering target having increased life and sputtering uniformity
KR100881055B1 (en) * 2007-06-20 2009-01-30 삼성전자주식회사 Phase-change memory unit, method of forming the phase-change memory unit, phase-change memory device having the phase-change memory unit and method of manufacturing the phase-change memory device
US7812333B2 (en) 2007-06-28 2010-10-12 Qimonda North America Corp. Integrated circuit including resistivity changing material having a planarized surface
US7777215B2 (en) 2007-07-20 2010-08-17 Macronix International Co., Ltd. Resistive memory structure with buffer layer
US9203024B2 (en) * 2007-07-25 2015-12-01 Intel Corporation Copper compatible chalcogenide phase change memory with adjustable threshold voltage
US7729161B2 (en) 2007-08-02 2010-06-01 Macronix International Co., Ltd. Phase change memory with dual word lines and source lines and method of operating same
DE602007010624D1 (en) * 2007-09-07 2010-12-30 Milano Politecnico Phase change memory device for multi-bit storage
US7642125B2 (en) * 2007-09-14 2010-01-05 Macronix International Co., Ltd. Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing
US8178386B2 (en) 2007-09-14 2012-05-15 Macronix International Co., Ltd. Phase change memory cell array with self-converged bottom electrode and method for manufacturing
US20090087561A1 (en) * 2007-09-28 2009-04-02 Advanced Technology Materials, Inc. Metal and metalloid silylamides, ketimates, tetraalkylguanidinates and dianionic guanidinates useful for cvd/ald of thin films
US7901552B2 (en) 2007-10-05 2011-03-08 Applied Materials, Inc. Sputtering target with grooves and intersecting channels
KR101162760B1 (en) * 2007-10-08 2012-07-05 삼성전자주식회사 phase change memory device and Method for manufacturing the same
US7729162B2 (en) * 2007-10-09 2010-06-01 Ovonyx, Inc. Semiconductor phase change memory using multiple phase change layers
US8834968B2 (en) 2007-10-11 2014-09-16 Samsung Electronics Co., Ltd. Method of forming phase change material layer using Ge(II) source, and method of fabricating phase change memory device
KR101458953B1 (en) 2007-10-11 2014-11-07 삼성전자주식회사 Method of forming phase change material layer using Ge(Ⅱ) source, and method of fabricating phase change memory device
US7919766B2 (en) 2007-10-22 2011-04-05 Macronix International Co., Ltd. Method for making self aligning pillar memory cell device
US20090107834A1 (en) * 2007-10-29 2009-04-30 Applied Materials, Inc. Chalcogenide target and method
JP5650880B2 (en) * 2007-10-31 2015-01-07 アドバンスド テクノロジー マテリアルズ，インコーポレイテッド Amorphous Ge / Te deposition method
US7646631B2 (en) * 2007-12-07 2010-01-12 Macronix International Co., Ltd. Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods
US7639527B2 (en) 2008-01-07 2009-12-29 Macronix International Co., Ltd. Phase change memory dynamic resistance test and manufacturing methods
US20090050873A1 (en) * 2008-01-16 2009-02-26 Qimonda Ag System Including Memory with Resistivity Changing Material and Method of Making the Same
US7879643B2 (en) * 2008-01-18 2011-02-01 Macronix International Co., Ltd. Memory cell with memory element contacting an inverted T-shaped bottom electrode
KR20090081153A (en) * 2008-01-23 2009-07-28 삼성전자주식회사 Resistive random access memory device and method of manufacturing the same
US7879645B2 (en) * 2008-01-28 2011-02-01 Macronix International Co., Ltd. Fill-in etching free pore device
US8158965B2 (en) * 2008-02-05 2012-04-17 Macronix International Co., Ltd. Heating center PCRAM structure and methods for making
US20090215225A1 (en) 2008-02-24 2009-08-27 Advanced Technology Materials, Inc. Tellurium compounds useful for deposition of tellurium containing materials
US8084842B2 (en) * 2008-03-25 2011-12-27 Macronix International Co., Ltd. Thermally stabilized electrode structure
US8030634B2 (en) 2008-03-31 2011-10-04 Macronix International Co., Ltd. Memory array with diode driver and method for fabricating the same
US7825398B2 (en) 2008-04-07 2010-11-02 Macronix International Co., Ltd. Memory cell having improved mechanical stability
KR20090107320A (en) * 2008-04-08 2009-10-13 삼성전자주식회사 Phase change memory device
US7791057B2 (en) * 2008-04-22 2010-09-07 Macronix International Co., Ltd. Memory cell having a buried phase change region and method for fabricating the same
US20090275164A1 (en) * 2008-05-02 2009-11-05 Advanced Technology Materials, Inc. Bicyclic guanidinates and bridging diamides as cvd/ald precursors
US8077505B2 (en) * 2008-05-07 2011-12-13 Macronix International Co., Ltd. Bipolar switching of phase change device
US7701750B2 (en) 2008-05-08 2010-04-20 Macronix International Co., Ltd. Phase change device having two or more substantial amorphous regions in high resistance state
US20110180905A1 (en) * 2008-06-10 2011-07-28 Advanced Technology Materials, Inc. GeSbTe MATERIAL INCLUDING SUPERFLOW LAYER(S), AND USE OF Ge TO PREVENT INTERACTION OF Te FROM SbXTeY AND GeXTeY RESULTING IN HIGH Te CONTENT AND FILM CRYSTALLINITY
US8415651B2 (en) * 2008-06-12 2013-04-09 Macronix International Co., Ltd. Phase change memory cell having top and bottom sidewall contacts
US8134857B2 (en) * 2008-06-27 2012-03-13 Macronix International Co., Ltd. Methods for high speed reading operation of phase change memory and device employing same
US20100019215A1 (en) * 2008-07-22 2010-01-28 Macronix International Co., Ltd. Mushroom type memory cell having self-aligned bottom electrode and diode access device
US7932506B2 (en) 2008-07-22 2011-04-26 Macronix International Co., Ltd. Fully self-aligned pore-type memory cell having diode access device
US8467236B2 (en) * 2008-08-01 2013-06-18 Boise State University Continuously variable resistor
US7903457B2 (en) 2008-08-19 2011-03-08 Macronix International Co., Ltd. Multiple phase change materials in an integrated circuit for system on a chip application
US7719913B2 (en) * 2008-09-12 2010-05-18 Macronix International Co., Ltd. Sensing circuit for PCRAM applications
US7969771B2 (en) * 2008-09-30 2011-06-28 Seagate Technology Llc Semiconductor device with thermally coupled phase change layers
US8324605B2 (en) * 2008-10-02 2012-12-04 Macronix International Co., Ltd. Dielectric mesh isolated phase change structure for phase change memory
US7897954B2 (en) 2008-10-10 2011-03-01 Macronix International Co., Ltd. Dielectric-sandwiched pillar memory device
KR101486984B1 (en) * 2008-10-30 2015-01-30 삼성전자주식회사 Resistance changeable memory device and method of forming thereof
US8036014B2 (en) * 2008-11-06 2011-10-11 Macronix International Co., Ltd. Phase change memory program method without over-reset
US8664689B2 (en) 2008-11-07 2014-03-04 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions
US8907316B2 (en) * 2008-11-07 2014-12-09 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
WO2010065874A2 (en) 2008-12-05 2010-06-10 Atmi High concentration nitrogen-containing germanium telluride based memory devices and processes of making
US7869270B2 (en) 2008-12-29 2011-01-11 Macronix International Co., Ltd. Set algorithm for phase change memory cell
US8089137B2 (en) * 2009-01-07 2012-01-03 Macronix International Co., Ltd. Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
US8107283B2 (en) * 2009-01-12 2012-01-31 Macronix International Co., Ltd. Method for setting PCRAM devices
WO2010082922A1 (en) * 2009-01-13 2010-07-22 Hewlett-Packard Development Company, L.P. Memristor having a triangular shaped electrode
US8030635B2 (en) 2009-01-13 2011-10-04 Macronix International Co., Ltd. Polysilicon plug bipolar transistor for phase change memory
US8064247B2 (en) 2009-01-14 2011-11-22 Macronix International Co., Ltd. Rewritable memory device based on segregation/re-absorption
US8933536B2 (en) 2009-01-22 2015-01-13 Macronix International Co., Ltd. Polysilicon pillar bipolar transistor with self-aligned memory element
KR101556929B1 (en) 2009-03-23 2015-10-02 삼성전자주식회사 Diode structure and Resistive random access memory device comprising the same
US8084760B2 (en) 2009-04-20 2011-12-27 Macronix International Co., Ltd. Ring-shaped electrode and manufacturing method for same
US8173987B2 (en) * 2009-04-27 2012-05-08 Macronix International Co., Ltd. Integrated circuit 3D phase change memory array and manufacturing method
US8829646B2 (en) * 2009-04-27 2014-09-09 Macronix International Co., Ltd. Integrated circuit 3D memory array and manufacturing method
US8097871B2 (en) * 2009-04-30 2012-01-17 Macronix International Co., Ltd. Low operational current phase change memory structures
US20100283029A1 (en) * 2009-05-11 2010-11-11 Charles Dennison Programmable resistance memory and method of making same
US7933139B2 (en) * 2009-05-15 2011-04-26 Macronix International Co., Ltd. One-transistor, one-resistor, one-capacitor phase change memory
US8350316B2 (en) 2009-05-22 2013-01-08 Macronix International Co., Ltd. Phase change memory cells having vertical channel access transistor and memory plane
US7968876B2 (en) 2009-05-22 2011-06-28 Macronix International Co., Ltd. Phase change memory cell having vertical channel access transistor
KR20160084491A (en) 2009-05-22 2016-07-13 엔테그리스, 아이엔씨. Low temperature gst process
US8809829B2 (en) * 2009-06-15 2014-08-19 Macronix International Co., Ltd. Phase change memory having stabilized microstructure and manufacturing method
US8406033B2 (en) 2009-06-22 2013-03-26 Macronix International Co., Ltd. Memory device and method for sensing and fixing margin cells
US8363463B2 (en) 2009-06-25 2013-01-29 Macronix International Co., Ltd. Phase change memory having one or more non-constant doping profiles
US8238149B2 (en) 2009-06-25 2012-08-07 Macronix International Co., Ltd. Methods and apparatus for reducing defect bits in phase change memory
KR101602007B1 (en) * 2009-07-02 2016-03-09 인티그리스, 인코포레이티드 Hollow gst structure with dielectric fill
US8138056B2 (en) * 2009-07-03 2012-03-20 International Business Machines Corporation Thermally insulated phase change material memory cells with pillar structure
US7894254B2 (en) 2009-07-15 2011-02-22 Macronix International Co., Ltd. Refresh circuitry for phase change memory
US8110822B2 (en) * 2009-07-15 2012-02-07 Macronix International Co., Ltd. Thermal protect PCRAM structure and methods for making
US8198619B2 (en) 2009-07-15 2012-06-12 Macronix International Co., Ltd. Phase change memory cell structure
US8283649B2 (en) * 2009-07-28 2012-10-09 Hewlett-Packard Development Company, L.P. Memristor with a non-planar substrate
US8064248B2 (en) 2009-09-17 2011-11-22 Macronix International Co., Ltd. 2T2R-1T1R mix mode phase change memory array
US8178387B2 (en) 2009-10-23 2012-05-15 Macronix International Co., Ltd. Methods for reducing recrystallization time for a phase change material
US20110124182A1 (en) * 2009-11-20 2011-05-26 Advanced Techology Materials, Inc. System for the delivery of germanium-based precursor
DE102010061572A1 (en) 2009-12-29 2011-07-14 Samsung Electronics Co., Ltd., Kyonggi Phase change structure, method of forming a phase change layer, phase change memory device, and method of manufacturing a phase change memory device
US9012876B2 (en) 2010-03-26 2015-04-21 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
US8729521B2 (en) 2010-05-12 2014-05-20 Macronix International Co., Ltd. Self aligned fin-type programmable memory cell
US9190609B2 (en) 2010-05-21 2015-11-17 Entegris, Inc. Germanium antimony telluride materials and devices incorporating same
US8310864B2 (en) 2010-06-15 2012-11-13 Macronix International Co., Ltd. Self-aligned bit line under word line memory array
US8624217B2 (en) 2010-06-25 2014-01-07 International Business Machines Corporation Planar phase-change memory cell with parallel electrical paths
US8575008B2 (en) 2010-08-31 2013-11-05 International Business Machines Corporation Post-fabrication self-aligned initialization of integrated devices
US9082954B2 (en) 2010-09-24 2015-07-14 Macronix International Co., Ltd. PCRAM with current flowing laterally relative to axis defined by electrodes
US8395935B2 (en) 2010-10-06 2013-03-12 Macronix International Co., Ltd. Cross-point self-aligned reduced cell size phase change memory
US8497705B2 (en) 2010-11-09 2013-07-30 Macronix International Co., Ltd. Phase change device for interconnection of programmable logic device
US8467238B2 (en) 2010-11-15 2013-06-18 Macronix International Co., Ltd. Dynamic pulse operation for phase change memory
CN102142517B (en) * 2010-12-17 2017-02-08 华中科技大学 Multiple-layer phase-change material with low thermal conductivity
US8497182B2 (en) 2011-04-19 2013-07-30 Macronix International Co., Ltd. Sidewall thin film electrode with self-aligned top electrode and programmable resistance memory
US8987700B2 (en) 2011-12-02 2015-03-24 Macronix International Co., Ltd. Thermally confined electrode for programmable resistance memory
US8853713B2 (en) 2012-05-07 2014-10-07 Micron Technology, Inc. Resistive memory having confined filament formation
US8981330B2 (en) 2012-07-16 2015-03-17 Macronix International Co., Ltd. Thermally-confined spacer PCM cells
WO2014070682A1 (en) 2012-10-30 2014-05-08 Advaned Technology Materials, Inc. Double self-aligned phase change memory device structure
KR20140065942A (en) * 2012-11-22 2014-05-30 에스케이하이닉스 주식회사 Resistance variable memory device and method for fabricating the same
US9214351B2 (en) 2013-03-12 2015-12-15 Macronix International Co., Ltd. Memory architecture of thin film 3D array
US8916414B2 (en) 2013-03-13 2014-12-23 Macronix International Co., Ltd. Method for making memory cell by melting phase change material in confined space
CN104051617B (en) * 2013-03-15 2017-05-10 台湾积体电路制造股份有限公司 Resistance variable memory structure and method of forming the same
US9312482B2 (en) * 2013-03-15 2016-04-12 Taiwan Semiconductor Manufacturing Company, Ltd. Resistance variable memory structure and method of forming the same
US9202846B2 (en) * 2013-03-22 2015-12-01 Kabushiki Kaisha Toshiba Resistance random access memory device
US9112148B2 (en) 2013-09-30 2015-08-18 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell structure with laterally offset BEVA/TEVA
CN103594621B (en) * 2013-11-05 2016-03-09 中国科学院苏州纳米技术与纳米仿生研究所 A kind of phase-change memory cell and preparation method thereof
US9336879B2 (en) 2014-01-24 2016-05-10 Macronix International Co., Ltd. Multiple phase change materials in an integrated circuit for system on a chip application
US9178144B1 (en) 2014-04-14 2015-11-03 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell with bottom electrode
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
CN104051622A (en) * 2014-05-06 2014-09-17 北京大学深圳研究生院 Multi-valued phase change storage unit
US9209392B1 (en) 2014-10-14 2015-12-08 Taiwan Semiconductor Manufacturing Co., Ltd. RRAM cell with bottom electrode
US9672906B2 (en) 2015-06-19 2017-06-06 Macronix International Co., Ltd. Phase change memory with inter-granular switching
US9564585B1 (en) 2015-09-03 2017-02-07 HGST Netherlands B.V. Multi-level phase change device
US9793323B1 (en) 2016-07-11 2017-10-17 Macronix International Co., Ltd. Phase change memory with high endurance
TWI699914B (en) 2016-09-08 2020-07-21 聯華電子股份有限公司 Semiconductor device and the method of making the same
TWI810362B (en) 2019-09-09 2023-08-01 聯華電子股份有限公司 Method of forming resistive random access memory cell
US11380843B2 (en) 2020-02-13 2022-07-05 International Business Machines Corporation Phase change memory using multiple stacks of PCM materials

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3801966A (en) * 1971-08-18 1974-04-02 Hitachi Ltd Optical memory device
WO1998019350A1 (en) * 1996-10-28 1998-05-07 Energy Conversion Devices, Inc. Composite memory material comprising a mixture of phase-change memory material and dielectric material
US5920788A (en) * 1995-06-07 1999-07-06 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes
US5952671A (en) * 1997-05-09 1999-09-14 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
EP0957477A2 (en) * 1998-05-15 1999-11-17 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, recording and reproducing method therefor and optical information recording and reproduction apparatus
EP1202285A2 (en) * 2000-10-27 2002-05-02 Matsushita Electric Industrial Co., Ltd. Memory, writing apparatus, reading apparatus, writing method, and reading method

Family Cites Families (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4115872A (en) * 1977-05-31 1978-09-19 Burroughs Corporation Amorphous semiconductor memory device for employment in an electrically alterable read-only memory
US4203123A (en) * 1977-12-12 1980-05-13 Burroughs Corporation Thin film memory device employing amorphous semiconductor materials
JPS60164937A (en) * 1984-02-08 1985-08-28 Hitachi Ltd Information recording medium
US4646266A (en) * 1984-09-28 1987-02-24 Energy Conversion Devices, Inc. Programmable semiconductor structures and methods for using the same
US4845533A (en) * 1986-08-22 1989-07-04 Energy Conversion Devices, Inc. Thin film electrical devices with amorphous carbon electrodes and method of making same
DE3927033C2 (en) * 1988-08-23 2000-12-21 Seiko Epson Corp Semiconductor component with antifuse electrode arrangement and method for its production
JPH03275382A (en) * 1990-03-27 1991-12-06 Fuji Photo Film Co Ltd Optical recording medium and recording regeneration method
US5166758A (en) * 1991-01-18 1992-11-24 Energy Conversion Devices, Inc. Electrically erasable phase change memory
US5177567A (en) * 1991-07-19 1993-01-05 Energy Conversion Devices, Inc. Thin-film structure for chalcogenide electrical switching devices and process therefor
US5444302A (en) * 1992-12-25 1995-08-22 Hitachi, Ltd. Semiconductor device including multi-layer conductive thin film of polycrystalline material
US5363329A (en) * 1993-11-10 1994-11-08 Eugeniy Troyan Semiconductor memory device for use in an electrically alterable read-only memory
US6420725B1 (en) * 1995-06-07 2002-07-16 Micron Technology, Inc. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
JP3492029B2 (en) * 1995-06-30 2004-02-03 キヤノン株式会社 Imaging device
US5714768A (en) * 1995-10-24 1998-02-03 Energy Conversion Devices, Inc. Second-layer phase change memory array on top of a logic device
US5837564A (en) * 1995-11-01 1998-11-17 Micron Technology, Inc. Method for optimal crystallization to obtain high electrical performance from chalcogenides
US5726484A (en) * 1996-03-06 1998-03-10 Xilinx, Inc. Multilayer amorphous silicon antifuse
US5789277A (en) * 1996-07-22 1998-08-04 Micron Technology, Inc. Method of making chalogenide memory device
US6015977A (en) * 1997-01-28 2000-01-18 Micron Technology, Inc. Integrated circuit memory cell having a small active area and method of forming same
KR100317434B1 (en) * 1998-03-12 2001-12-22 아끼구사 나오유끼 Semiconductor device and manufacturing method of the same
US6141241A (en) * 1998-06-23 2000-10-31 Energy Conversion Devices, Inc. Universal memory element with systems employing same and apparatus and method for reading, writing and programming same
US7173317B1 (en) * 1998-11-09 2007-02-06 Micron Technology, Inc. Electrical and thermal contact for use in semiconductor devices
TWI233098B (en) * 2000-08-31 2005-05-21 Matsushita Electric Ind Co Ltd Data recoding medium, the manufacturing method thereof, and the record reproducing method thereof
US6570784B2 (en) * 2001-06-29 2003-05-27 Ovonyx, Inc. Programming a phase-change material memory
US6511862B2 (en) * 2001-06-30 2003-01-28 Ovonyx, Inc. Modified contact for programmable devices
US6737312B2 (en) * 2001-08-27 2004-05-18 Micron Technology, Inc. Method of fabricating dual PCRAM cells sharing a common electrode
US6507061B1 (en) * 2001-08-31 2003-01-14 Intel Corporation Multiple layer phase-change memory

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3801966A (en) * 1971-08-18 1974-04-02 Hitachi Ltd Optical memory device
US5920788A (en) * 1995-06-07 1999-07-06 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes
WO1998019350A1 (en) * 1996-10-28 1998-05-07 Energy Conversion Devices, Inc. Composite memory material comprising a mixture of phase-change memory material and dielectric material
US5952671A (en) * 1997-05-09 1999-09-14 Micron Technology, Inc. Small electrode for a chalcogenide switching device and method for fabricating same
EP0957477A2 (en) * 1998-05-15 1999-11-17 Matsushita Electric Industrial Co., Ltd. Optical information recording medium, recording and reproducing method therefor and optical information recording and reproduction apparatus
EP1202285A2 (en) * 2000-10-27 2002-05-02 Matsushita Electric Industrial Co., Ltd. Memory, writing apparatus, reading apparatus, writing method, and reading method

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US20030071289A1 (en) 2003-04-17
US6998289B2 (en) 2006-02-14
CN1568551A (en) 2005-01-19
US20030080427A1 (en) 2003-05-01
DE10297115B4 (en) 2009-04-09
US6507061B1 (en) 2003-01-14
KR100594849B1 (en) 2006-06-30
US6674115B2 (en) 2004-01-06

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