WO2003038921A1 - Isolator für ein organisches elektronikbauteil - Google Patents
Isolator für ein organisches elektronikbauteil Download PDFInfo
- Publication number
- WO2003038921A1 WO2003038921A1 PCT/DE2002/003292 DE0203292W WO03038921A1 WO 2003038921 A1 WO2003038921 A1 WO 2003038921A1 DE 0203292 W DE0203292 W DE 0203292W WO 03038921 A1 WO03038921 A1 WO 03038921A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- insulator
- poly
- base polymer
- organic
- styrene
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES OR LIGHT-SENSITIVE DEVICES, OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/14—Organic dielectrics
- H01G4/18—Organic dielectrics of synthetic material, e.g. derivatives of cellulose
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
- H01B3/442—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from aromatic vinyl compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
- H01B3/00—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties
- H01B3/18—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances
- H01B3/30—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes
- H01B3/44—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins
- H01B3/447—Insulators or insulating bodies characterised by the insulating materials; Selection of materials for their insulating or dielectric properties mainly consisting of organic substances plastics; resins; waxes vinyl resins; acrylic resins from acrylic compounds
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
- H10K10/471—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics the gate dielectric comprising only organic materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
Definitions
- the invention relates to an insulator for an organic electronic component, in particular for an organic field-effect transistor (OFET) and / or an organic capacitor.
- OFET organic field-effect transistor
- A e.g. Polyhydroxystyrene and B poly (styrene-co-allyl alcohol) e.g. Is polyvinyltoluene, poly-alpha-methylstyrene.
- the insulator material should preferably not contain any movable contaminants (eg ions).
- the threshold voltage of the OFET is preferably not shifted by the isolator system.
- organic material or "organic functional polymer” here encompasses all types of organic, metal-organic and / or organic-inorganic plastics (hybrids), in particular those which are referred to in English as “plastics". They are all types of substances with the exception of the semiconductors that form the classic diodes (germanium, silicon) and the typical metallic conductors. A restriction in the dogmatic sense to organic material as carbon-containing material is therefore not provided, rather the broad use of, for example, silicones is also contemplated. Furthermore, the term should not be subject to any restriction with regard to the molecular size, in particular to polymeric and / or oligomeric materials, but the use of "small molecules” is also entirely possible.
- the word component "polymer” in the functional polymer is historical and therefore contains no information about the presence of an actually polymeric compound.
Landscapes
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Formation Of Insulating Films (AREA)
- Thin Film Transistor (AREA)
- Organic Insulating Materials (AREA)
- Compositions Of Macromolecular Compounds (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/492,922 US7298023B2 (en) | 2001-10-16 | 2002-09-05 | Electronic device with organic insulator |
JP2003541075A JP4360911B2 (ja) | 2001-10-16 | 2002-09-05 | 有機電子デバイス用の絶縁体 |
EP02769910A EP1436850A1 (de) | 2001-10-16 | 2002-09-05 | Isolator für ein organisches elektronikbauteil |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10151036A DE10151036A1 (de) | 2001-10-16 | 2001-10-16 | Isolator für ein organisches Elektronikbauteil |
DE10151036.5 | 2001-10-16 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003038921A1 true WO2003038921A1 (de) | 2003-05-08 |
Family
ID=7702674
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2002/003292 WO2003038921A1 (de) | 2001-10-16 | 2002-09-05 | Isolator für ein organisches elektronikbauteil |
Country Status (5)
Country | Link |
---|---|
US (1) | US7298023B2 (de) |
EP (1) | EP1436850A1 (de) |
JP (1) | JP4360911B2 (de) |
DE (1) | DE10151036A1 (de) |
WO (1) | WO2003038921A1 (de) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7029945B2 (en) | 2001-12-19 | 2006-04-18 | Merck Patent Gmbh | Organic field effect transistor with an organic dielectric |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10043204A1 (de) * | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
US20040094761A1 (en) * | 2002-11-02 | 2004-05-20 | David Sparrowe | Polymerizable amine mixtures, amine polymer materials and their use |
US20040171743A1 (en) * | 2003-01-21 | 2004-09-02 | Terry Brewer, Ph.D. | Hybrid organic-inorganic polymer coatings with high refractive indices |
WO2006104069A1 (ja) * | 2005-03-28 | 2006-10-05 | Pioneer Corporation | ゲート絶縁膜、有機トランジスタ、有機el表示装置の製造方法、ディスプレイ |
DE102005031448A1 (de) | 2005-07-04 | 2007-01-11 | Polyic Gmbh & Co. Kg | Aktivierbare optische Schicht |
DE102005044306A1 (de) | 2005-09-16 | 2007-03-22 | Polyic Gmbh & Co. Kg | Elektronische Schaltung und Verfahren zur Herstellung einer solchen |
CH705051B1 (fr) * | 2007-12-21 | 2012-12-14 | Swatch Group Res & Dev Ltd | Dispositif d'affichage à matrice active. |
US8692238B2 (en) | 2012-04-25 | 2014-04-08 | Eastman Kodak Company | Semiconductor devices and methods of preparation |
US8779415B2 (en) | 2012-11-08 | 2014-07-15 | Eastman Kodak Company | Devices containing organic polymeric multi-metallic composites |
WO2015191293A1 (en) | 2014-06-11 | 2015-12-17 | Eastman Kodak Company | Devices having dielectric layers with thiosulfate-containing polymers |
DE102016115742B4 (de) | 2015-12-08 | 2022-11-24 | Shanghai Tianma Micro-electronics Co., Ltd. | Verbundsubstrat, flexible Anzeigevorrichtung und Verfahren zu deren Herstellung |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5347144A (en) * | 1990-07-04 | 1994-09-13 | Centre National De La Recherche Scientifique (Cnrs) | Thin-layer field-effect transistors with MIS structure whose insulator and semiconductor are made of organic materials |
WO2000079617A1 (en) * | 1999-06-21 | 2000-12-28 | Cambridge University Technical Services Limited | Aligned polymers for an organic tft |
US6207472B1 (en) * | 1999-03-09 | 2001-03-27 | International Business Machines Corporation | Low temperature thin film transistor fabrication |
WO2001047045A1 (en) * | 1999-12-21 | 2001-06-28 | Plastic Logic Limited | Solution processing |
Family Cites Families (107)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3512052A (en) | 1968-01-11 | 1970-05-12 | Gen Motors Corp | Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric |
US3769096A (en) * | 1971-03-12 | 1973-10-30 | Bell Telephone Labor Inc | Pyroelectric devices |
JPS543594B2 (de) | 1973-10-12 | 1979-02-24 | ||
JPS54101176A (en) | 1978-01-26 | 1979-08-09 | Shinetsu Polymer Co | Contact member for push switch |
US4442019A (en) | 1978-05-26 | 1984-04-10 | Marks Alvin M | Electroordered dipole suspension |
US4340657A (en) * | 1980-02-19 | 1982-07-20 | Polychrome Corporation | Novel radiation-sensitive articles |
US4666735A (en) * | 1983-04-15 | 1987-05-19 | Polyonics Corporation | Process for producing product having patterned metal layer |
DE3338597A1 (de) | 1983-10-24 | 1985-05-02 | GAO Gesellschaft für Automation und Organisation mbH, 8000 München | Datentraeger mit integriertem schaltkreis und verfahren zur herstellung desselben |
JPS60117769A (ja) | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 半導体メモリ装置 |
DE3768112D1 (de) * | 1986-03-03 | 1991-04-04 | Toshiba Kawasaki Kk | Strahlungsdetektor. |
JP2728412B2 (ja) | 1987-12-25 | 1998-03-18 | 株式会社日立製作所 | 半導体装置 |
GB2215307B (en) | 1988-03-04 | 1991-10-09 | Unisys Corp | Electronic component transportation container |
US5364735A (en) * | 1988-07-01 | 1994-11-15 | Sony Corporation | Multiple layer optical record medium with protective layers and method for producing same |
US4937119A (en) * | 1988-12-15 | 1990-06-26 | Hoechst Celanese Corp. | Textured organic optical data storage media and methods of preparation |
US5892244A (en) * | 1989-01-10 | 1999-04-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor |
US6331356B1 (en) * | 1989-05-26 | 2001-12-18 | International Business Machines Corporation | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
US5206525A (en) * | 1989-12-27 | 1993-04-27 | Nippon Petrochemicals Co., Ltd. | Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials |
FR2673041A1 (fr) | 1991-02-19 | 1992-08-21 | Gemplus Card Int | Procede de fabrication de micromodules de circuit integre et micromodule correspondant. |
US5408109A (en) * | 1991-02-27 | 1995-04-18 | The Regents Of The University Of California | Visible light emitting diodes fabricated from soluble semiconducting polymers |
JPH0580530A (ja) | 1991-09-24 | 1993-04-02 | Hitachi Ltd | 薄膜パターン製造方法 |
US5173835A (en) | 1991-10-15 | 1992-12-22 | Motorola, Inc. | Voltage variable capacitor |
JPH0770470B2 (ja) * | 1991-10-30 | 1995-07-31 | フラウンホファー・ゲゼルシャフト・ツール・フォルデルング・デル・アンゲバンテン・フォルシュング・アインゲトラーゲネル・フェライン | 照射装置 |
JP2709223B2 (ja) * | 1992-01-30 | 1998-02-04 | 三菱電機株式会社 | 非接触形携帯記憶装置 |
DE4243832A1 (de) | 1992-12-23 | 1994-06-30 | Daimler Benz Ag | Tastsensoranordnung |
JP3457348B2 (ja) * | 1993-01-15 | 2003-10-14 | 株式会社東芝 | 半導体装置の製造方法 |
US5567550A (en) * | 1993-03-25 | 1996-10-22 | Texas Instruments Incorporated | Method of making a mask for making integrated circuits |
JPH0722669A (ja) * | 1993-07-01 | 1995-01-24 | Mitsubishi Electric Corp | 可塑性機能素子 |
JP3460863B2 (ja) * | 1993-09-17 | 2003-10-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
US5556706A (en) * | 1993-10-06 | 1996-09-17 | Matsushita Electric Industrial Co., Ltd. | Conductive layered product and method of manufacturing the same |
IL111151A (en) | 1994-10-03 | 1998-09-24 | News Datacom Ltd | Secure access systems |
JP3246189B2 (ja) * | 1994-06-28 | 2002-01-15 | 株式会社日立製作所 | 半導体表示装置 |
US5574291A (en) * | 1994-12-09 | 1996-11-12 | Lucent Technologies Inc. | Article comprising a thin film transistor with low conductivity organic layer |
JP3068430B2 (ja) | 1995-04-25 | 2000-07-24 | 富山日本電気株式会社 | 固体電解コンデンサ及びその製造方法 |
US5652645A (en) * | 1995-07-24 | 1997-07-29 | Anvik Corporation | High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates |
US5625199A (en) * | 1996-01-16 | 1997-04-29 | Lucent Technologies Inc. | Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors |
GB2310493B (en) | 1996-02-26 | 2000-08-02 | Unilever Plc | Determination of the characteristics of fluid |
JP3080579B2 (ja) | 1996-03-06 | 2000-08-28 | 富士機工電子株式会社 | エアリア・グリッド・アレイ・パッケージの製造方法 |
DE19629656A1 (de) * | 1996-07-23 | 1998-01-29 | Boehringer Mannheim Gmbh | Diagnostischer Testträger mit mehrschichtigem Testfeld und Verfahren zur Bestimmung von Analyt mit dessen Hilfe |
US6344662B1 (en) * | 1997-03-25 | 2002-02-05 | International Business Machines Corporation | Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages |
KR100248392B1 (ko) * | 1997-05-15 | 2000-09-01 | 정선종 | 유기물전계효과트랜지스터와결합된유기물능동구동전기발광소자및그소자의제작방법 |
JPH1135893A (ja) * | 1997-05-22 | 1999-02-09 | Toray Dow Corning Silicone Co Ltd | シート状ホットメルト接着剤、および半導体装置 |
JP4509228B2 (ja) * | 1997-08-22 | 2010-07-21 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 有機材料から成る電界効果トランジスタ及びその製造方法 |
WO1999013441A2 (en) * | 1997-09-11 | 1999-03-18 | Precision Dynamics Corporation | Radio frequency identification tag on flexible substrate |
US6078196A (en) * | 1997-09-17 | 2000-06-20 | Intel Corporation | Data enabled logic circuits |
US6251513B1 (en) * | 1997-11-08 | 2001-06-26 | Littlefuse, Inc. | Polymer composites for overvoltage protection |
JPH11142810A (ja) | 1997-11-12 | 1999-05-28 | Nintendo Co Ltd | 携帯型情報処理装置 |
US5997817A (en) * | 1997-12-05 | 1999-12-07 | Roche Diagnostics Corporation | Electrochemical biosensor test strip |
WO1999030432A1 (en) * | 1997-12-05 | 1999-06-17 | Koninklijke Philips Electronics N.V. | Identification transponder |
US5998805A (en) * | 1997-12-11 | 1999-12-07 | Motorola, Inc. | Active matrix OED array with improved OED cathode |
US6083104A (en) * | 1998-01-16 | 2000-07-04 | Silverlit Toys (U.S.A.), Inc. | Programmable toy with an independent game cartridge |
AU739848B2 (en) * | 1998-01-28 | 2001-10-18 | Thin Film Electronics Asa | A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures |
US6087196A (en) | 1998-01-30 | 2000-07-11 | The Trustees Of Princeton University | Fabrication of organic semiconductor devices using ink jet printing |
US6045977A (en) * | 1998-02-19 | 2000-04-04 | Lucent Technologies Inc. | Process for patterning conductive polyaniline films |
DE19816860A1 (de) | 1998-03-06 | 1999-11-18 | Deutsche Telekom Ag | Chipkarte, insbesondere Guthabenkarte |
US6033202A (en) * | 1998-03-27 | 2000-03-07 | Lucent Technologies Inc. | Mold for non - photolithographic fabrication of microstructures |
GB9808061D0 (en) * | 1998-04-16 | 1998-06-17 | Cambridge Display Tech Ltd | Polymer devices |
TW410478B (en) * | 1998-05-29 | 2000-11-01 | Lucent Technologies Inc | Thin-film transistor monolithically integrated with an organic light-emitting diode |
US5967048A (en) * | 1998-06-12 | 1999-10-19 | Howard A. Fromson | Method and apparatus for the multiple imaging of a continuous web |
US6215130B1 (en) * | 1998-08-20 | 2001-04-10 | Lucent Technologies Inc. | Thin film transistors |
US6330464B1 (en) * | 1998-08-26 | 2001-12-11 | Sensors For Medicine & Science | Optical-based sensing devices |
US6315883B1 (en) * | 1998-10-26 | 2001-11-13 | Novellus Systems, Inc. | Electroplanarization of large and small damascene features using diffusion barriers and electropolishing |
DE19851703A1 (de) | 1998-10-30 | 2000-05-04 | Inst Halbleiterphysik Gmbh | Verfahren zur Herstellung von elektronischen Strukturen |
US6207522B1 (en) * | 1998-11-23 | 2001-03-27 | Microcoating Technologies | Formation of thin film capacitors |
US6384804B1 (en) * | 1998-11-25 | 2002-05-07 | Lucent Techonologies Inc. | Display comprising organic smart pixels |
US6506438B2 (en) * | 1998-12-15 | 2003-01-14 | E Ink Corporation | Method for printing of transistor arrays on plastic substrates |
US6321571B1 (en) * | 1998-12-21 | 2001-11-27 | Corning Incorporated | Method of making glass structures for flat panel displays |
US6114088A (en) * | 1999-01-15 | 2000-09-05 | 3M Innovative Properties Company | Thermal transfer element for forming multilayer devices |
GB2347013A (en) * | 1999-02-16 | 2000-08-23 | Sharp Kk | Charge-transport structures |
AU5646800A (en) * | 1999-03-02 | 2000-09-21 | Helix Biopharma Corporation | Card-based biosensor device |
US6498114B1 (en) * | 1999-04-09 | 2002-12-24 | E Ink Corporation | Method for forming a patterned semiconductor film |
US6072716A (en) * | 1999-04-14 | 2000-06-06 | Massachusetts Institute Of Technology | Memory structures and methods of making same |
DE19921024C2 (de) | 1999-05-06 | 2001-03-08 | Wolfgang Eichelmann | Videospielanlage |
US6383664B2 (en) * | 1999-05-11 | 2002-05-07 | The Dow Chemical Company | Electroluminescent or photocell device having protective packaging |
JP3940546B2 (ja) * | 1999-06-07 | 2007-07-04 | 株式会社東芝 | パターン形成方法およびパターン形成材料 |
DE19933757A1 (de) | 1999-07-19 | 2001-01-25 | Giesecke & Devrient Gmbh | Chipkarte mit integrierter Batterie |
DE19935527A1 (de) | 1999-07-28 | 2001-02-08 | Giesecke & Devrient Gmbh | Aktive Folie für Chipkarten mit Display |
DE19937262A1 (de) | 1999-08-06 | 2001-03-01 | Siemens Ag | Anordnung mit Transistor-Funktion |
US6593690B1 (en) * | 1999-09-03 | 2003-07-15 | 3M Innovative Properties Company | Large area organic electronic devices having conducting polymer buffer layers and methods of making same |
US6517995B1 (en) * | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
WO2001027998A1 (en) * | 1999-10-11 | 2001-04-19 | Koninklijke Philips Electronics N.V. | Integrated circuit |
US6335539B1 (en) * | 1999-11-05 | 2002-01-01 | International Business Machines Corporation | Method for improving performance of organic semiconductors in bottom electrode structure |
US6284562B1 (en) * | 1999-11-17 | 2001-09-04 | Agere Systems Guardian Corp. | Thin film transistors |
US6621098B1 (en) * | 1999-11-29 | 2003-09-16 | The Penn State Research Foundation | Thin-film transistor and methods of manufacturing and incorporating a semiconducting organic material |
US6673434B2 (en) * | 1999-12-01 | 2004-01-06 | Honeywell International, Inc. | Thermal interface materials |
US6197663B1 (en) * | 1999-12-07 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating integrated circuit devices having thin film transistors |
US6304232B1 (en) * | 2000-02-24 | 2001-10-16 | The Goodyear Tire & Rubber Company | Circuit module |
DE10012204A1 (de) | 2000-03-13 | 2001-09-20 | Siemens Ag | Einrichtung zum Kennzeichnen von Stückgut |
US6441196B2 (en) * | 2000-05-19 | 2002-08-27 | Alcon, Inc. | Processes and novel intermediates for 11-oxa prostaglandin synthesis |
US6329226B1 (en) * | 2000-06-01 | 2001-12-11 | Agere Systems Guardian Corp. | Method for fabricating a thin-film transistor |
DE10033112C2 (de) * | 2000-07-07 | 2002-11-14 | Siemens Ag | Verfahren zur Herstellung und Strukturierung organischer Feldeffekt-Transistoren (OFET), hiernach gefertigter OFET und seine Verwendung |
JP3609697B2 (ja) * | 2000-08-10 | 2005-01-12 | 北川工業株式会社 | 電気・電子装置用の導電性箔付き熱伝導シート |
US7875975B2 (en) * | 2000-08-18 | 2011-01-25 | Polyic Gmbh & Co. Kg | Organic integrated circuit completely encapsulated by multi-layered barrier and included in RFID tag |
DE10043204A1 (de) | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
DE10045192A1 (de) | 2000-09-13 | 2002-04-04 | Siemens Ag | Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers |
DE10047171A1 (de) | 2000-09-22 | 2002-04-18 | Siemens Ag | Elektrode und/oder Leiterbahn für organische Bauelemente und Herstellungverfahren dazu |
KR20020036916A (ko) | 2000-11-11 | 2002-05-17 | 주승기 | 실리콘 박막의 결정화 방법 및 이에 의해 제조된 반도체소자 |
GB0028867D0 (en) * | 2000-11-28 | 2001-01-10 | Avecia Ltd | Field effect translators,methods for the manufacture thereof and materials therefor |
KR100390522B1 (ko) | 2000-12-01 | 2003-07-07 | 피티플러스(주) | 결정질 실리콘 활성층을 포함하는 박막트랜지스터 제조 방법 |
US20020170897A1 (en) | 2001-05-21 | 2002-11-21 | Hall Frank L. | Methods for preparing ball grid array substrates via use of a laser |
US6870180B2 (en) | 2001-06-08 | 2005-03-22 | Lucent Technologies Inc. | Organic polarizable gate transistor apparatus and method |
JP3865601B2 (ja) * | 2001-06-12 | 2007-01-10 | 日東電工株式会社 | 電磁波抑制体シート |
JP2003089259A (ja) * | 2001-09-18 | 2003-03-25 | Hitachi Ltd | パターン形成方法およびパターン形成装置 |
US7351660B2 (en) | 2001-09-28 | 2008-04-01 | Hrl Laboratories, Llc | Process for producing high performance interconnects |
US6946332B2 (en) * | 2002-03-15 | 2005-09-20 | Lucent Technologies Inc. | Forming nanoscale patterned thin film metal layers |
US6812509B2 (en) | 2002-06-28 | 2004-11-02 | Palo Alto Research Center Inc. | Organic ferroelectric memory cells |
US6870183B2 (en) * | 2002-11-04 | 2005-03-22 | Advanced Micro Devices, Inc. | Stacked organic memory devices and methods of operating and fabricating |
-
2001
- 2001-10-16 DE DE10151036A patent/DE10151036A1/de not_active Withdrawn
-
2002
- 2002-09-05 JP JP2003541075A patent/JP4360911B2/ja not_active Expired - Fee Related
- 2002-09-05 EP EP02769910A patent/EP1436850A1/de not_active Withdrawn
- 2002-09-05 WO PCT/DE2002/003292 patent/WO2003038921A1/de active Application Filing
- 2002-09-05 US US10/492,922 patent/US7298023B2/en not_active Expired - Fee Related
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5347144A (en) * | 1990-07-04 | 1994-09-13 | Centre National De La Recherche Scientifique (Cnrs) | Thin-layer field-effect transistors with MIS structure whose insulator and semiconductor are made of organic materials |
US6207472B1 (en) * | 1999-03-09 | 2001-03-27 | International Business Machines Corporation | Low temperature thin film transistor fabrication |
WO2000079617A1 (en) * | 1999-06-21 | 2000-12-28 | Cambridge University Technical Services Limited | Aligned polymers for an organic tft |
WO2001047045A1 (en) * | 1999-12-21 | 2001-06-28 | Plastic Logic Limited | Solution processing |
Non-Patent Citations (5)
Title |
---|
KLIEM H ET AL: "Dielectric permittivity of Si3N4 and SiO2 increased by electrode profile and material", ELECTRICAL INSULATION AND DIELECTRIC PHENOMENA, 1999 ANNUAL REPORT CONFERENCE ON AUSTIN, TX, USA 17-20 OCT. 1999, PISCATAWAY, NJ, USA,IEEE, US, 17 October 1999 (1999-10-17), pages 70 - 73, XP010359269, ISBN: 0-7803-5414-1 * |
ROGERS J A ET AL: "ORGANIC SMART PIXELS AND COMPLEMENTARY INVERTER CIRCUITS FORMED ON PLASTIC SUBSTRATES BY CASTING AND RUBBER STAMPING", IEEE ELECTRON DEVICE LETTERS, IEEE INC. NEW YORK, US, vol. 21, no. 3, March 2000 (2000-03-01), pages 100 - 103, XP000936860, ISSN: 0741-3106 * |
S. A. PROSANDEEV, V. A. TREPAKOV, M. E. SAVINOV, L. JASTRABIK, S. E. KAPPHAN: "Characteristics and the Nature of the Low-Frequency Dielectric Response in Moderately Concentrated KTaO3:Li", J. PHYS.: CONDENS. MATTER, vol. 13, 2 April 2001 (2001-04-02), UK, pages 9749 - 9760, XP002230268 * |
S. KAMBA, V. BOVTUN, J. PETZELT, I. RYCHETSKY, R. MIZARAS, A. BRILINGAS, J. BANYS, J. GRIGAS, M. KOSEC: "Dielectric Dispersion of the Relaxor PLZT Ceramics in the Frequency Range 20 Hz - 100 THz", J. PHYS.: CONDENS. MATTER, vol. 12, 27 March 2000 (2000-03-27), UK, pages 497 - 519, XP002230267 * |
YASUFUKU S ET AL: "Dielectric and thermoanalytical behavior of moisture and water in aromatic polyimide and polyimide films", ELECTRICAL INSULATION, 1994., CONFERENCE RECORD OF THE 1994 IEEE INTERNATIONAL SYMPOSIUM ON PITTSBURGH, PA, USA 5-8 JUNE 1994, NEW YORK, NY, USA,IEEE, 5 June 1994 (1994-06-05), pages 197 - 200, XP010139433, ISBN: 0-7803-1942-7 * |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7029945B2 (en) | 2001-12-19 | 2006-04-18 | Merck Patent Gmbh | Organic field effect transistor with an organic dielectric |
Also Published As
Publication number | Publication date |
---|---|
EP1436850A1 (de) | 2004-07-14 |
JP2005507180A (ja) | 2005-03-10 |
DE10151036A1 (de) | 2003-05-08 |
JP4360911B2 (ja) | 2009-11-11 |
US7298023B2 (en) | 2007-11-20 |
US20050048803A1 (en) | 2005-03-03 |
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