WO2003040829A3 - Maskless printer using photoelectric conversion of a light beam array - Google Patents

Maskless printer using photoelectric conversion of a light beam array Download PDF

Info

Publication number
WO2003040829A3
WO2003040829A3 PCT/US2002/035641 US0235641W WO03040829A3 WO 2003040829 A3 WO2003040829 A3 WO 2003040829A3 US 0235641 W US0235641 W US 0235641W WO 03040829 A3 WO03040829 A3 WO 03040829A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
electron
photon
beams
printer
Prior art date
Application number
PCT/US2002/035641
Other languages
French (fr)
Other versions
WO2003040829A2 (en
Inventor
Gilad Almogy
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to AU2002342349A priority Critical patent/AU2002342349A1/en
Priority to JP2003542404A priority patent/JP2005533365A/en
Priority to EP02776470A priority patent/EP1446702A2/en
Publication of WO2003040829A2 publication Critical patent/WO2003040829A2/en
Publication of WO2003040829A3 publication Critical patent/WO2003040829A3/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/20—Exposure; Apparatus therefor
    • G03F7/2051—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source
    • G03F7/2057—Exposure without an original mask, e.g. using a programmed deflection of a point source, by scanning, by drawing with a light beam, using an addressed light or corpuscular source using an addressed light valve, e.g. a liquid crystal device
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70275—Multiple projection paths, e.g. array of projection systems, microlens projection systems or tandem projection systems
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70283—Mask effects on the imaging process
    • G03F7/70291—Addressable masks, e.g. spatial light modulators [SLMs], digital micro-mirror devices [DMDs] or liquid crystal display [LCD] patterning devices
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70375—Multiphoton lithography or multiphoton photopolymerization; Imaging systems comprising means for converting one type of radiation into another type of radiation
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70383—Direct write, i.e. pattern is written directly without the use of a mask by one or multiple beams
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/02—Details
    • H01J37/04—Arrangements of electrodes and associated parts for generating or controlling the discharge, e.g. electron-optical arrangement, ion-optical arrangement
    • H01J37/06—Electron sources; Electron guns
    • H01J37/073—Electron guns using field emission, photo emission, or secondary emission electron sources
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3175—Projection methods, i.e. transfer substantially complete pattern to substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3174—Particle-beam lithography, e.g. electron beam lithography
    • H01J37/3177—Multi-beam, e.g. fly's eye, comb probe
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/10—Lenses
    • H01J2237/12—Lenses electrostatic
    • H01J2237/1205—Microlenses
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/30—Electron or ion beam tubes for processing objects
    • H01J2237/317—Processing objects on a microscale
    • H01J2237/3175—Lithography
    • H01J2237/31777—Lithography by projection
    • H01J2237/31779—Lithography by projection from patterned photocathode

Abstract

A high resolution and high data rate spot grid array printer system is provided, wherein an image representative of patterns to be recorded on a reticle or on a layer of a semiconductor die is formed by scanning a substrate (160) with electron beams. Embodiments include a printer comprising an optical radiation source (105) for irradiating a photon-electron converter with a plurality of substantially parallel optical beams, the optical beams being individually modulated to correspond to an image to be recorded on the substrate. The photon-electron converter produces an intermediate image composed of an array of electron beams corresponding to the modulated optical beams. A de-magnifier (155) is interposed between the photon-electron converter and the substrate, for reducing the size of the intermediate image. A movable stage (167) introduces a relative movement between the substrate and the photon-electron converter, such that the substrate is scanned by the electron beams.
PCT/US2002/035641 2001-11-07 2002-11-07 Maskless printer using photoelectric conversion of a light beam array WO2003040829A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2002342349A AU2002342349A1 (en) 2001-11-07 2002-11-07 Maskless printer using photoelectric conversion of a light beam array
JP2003542404A JP2005533365A (en) 2001-11-07 2002-11-07 Maskless photon-electron spot grating array printing device
EP02776470A EP1446702A2 (en) 2001-11-07 2002-11-07 Maskless printer using photoelectric conversion of a light beam array

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US33103501P 2001-11-07 2001-11-07
US60/331,035 2001-11-07

Publications (2)

Publication Number Publication Date
WO2003040829A2 WO2003040829A2 (en) 2003-05-15
WO2003040829A3 true WO2003040829A3 (en) 2003-10-16

Family

ID=23292344

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/035641 WO2003040829A2 (en) 2001-11-07 2002-11-07 Maskless printer using photoelectric conversion of a light beam array

Country Status (7)

Country Link
US (1) US6841787B2 (en)
EP (1) EP1446702A2 (en)
JP (1) JP2005533365A (en)
KR (1) KR20050044369A (en)
CN (2) CN1602451A (en)
AU (1) AU2002342349A1 (en)
WO (1) WO2003040829A2 (en)

Families Citing this family (115)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7907319B2 (en) * 1995-11-06 2011-03-15 Qualcomm Mems Technologies, Inc. Method and device for modulating light with optical compensation
US8928967B2 (en) 1998-04-08 2015-01-06 Qualcomm Mems Technologies, Inc. Method and device for modulating light
KR100703140B1 (en) * 1998-04-08 2007-04-05 이리다임 디스플레이 코포레이션 Interferometric modulation and its manufacturing method
US6919952B2 (en) * 2002-03-19 2005-07-19 Mapper Lithography Ip B.V. Direct write lithography system
US7053985B2 (en) * 2002-07-19 2006-05-30 Applied Materials, Isreal, Ltd. Printer and a method for recording a multi-level image
US6963390B1 (en) * 2002-07-19 2005-11-08 Litel Instruments In-situ interferometer arrangement
US6894292B2 (en) * 2002-08-02 2005-05-17 Massachusetts Institute Of Technology System and method for maskless lithography using an array of sources and an array of focusing elements
US6822241B2 (en) * 2002-10-03 2004-11-23 Hewlett-Packard Development Company, L.P. Emitter device with focusing columns
US7098468B2 (en) * 2002-11-07 2006-08-29 Applied Materials, Inc. Raster frame beam system for electron beam lithography
FR2849218B1 (en) * 2002-12-20 2005-03-04 Mauna Kea Technologies CONFOCAL OPTICAL HEAD, IN PARTICULAR MINIATURE, INTEGRATED SCANNING AND CONFOCAL IMAGING SYSTEM IMPLEMENTING SAID HEAD
TWI289708B (en) 2002-12-25 2007-11-11 Qualcomm Mems Technologies Inc Optical interference type color display
EP1480080A1 (en) * 2003-05-22 2004-11-24 ASML Netherlands B.V. Lithographic apparatus and device manufacturing method
US7061591B2 (en) * 2003-05-30 2006-06-13 Asml Holding N.V. Maskless lithography systems and methods utilizing spatial light modulator arrays
JP4749682B2 (en) * 2003-06-04 2011-08-17 富士フイルム株式会社 Exposure equipment
CN1829945B (en) 2003-07-30 2010-05-05 迈普尔平版印刷Ip有限公司 Modulator circuit
US7012674B2 (en) * 2004-01-13 2006-03-14 Asml Holding N.V. Maskless optical writer
US7342705B2 (en) 2004-02-03 2008-03-11 Idc, Llc Spatial light modulator with integrated optical compensation structure
US7855824B2 (en) * 2004-03-06 2010-12-21 Qualcomm Mems Technologies, Inc. Method and system for color optimization in a display
US6967711B2 (en) * 2004-03-09 2005-11-22 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
USRE43515E1 (en) 2004-03-09 2012-07-17 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7227618B1 (en) 2004-03-24 2007-06-05 Baokang Bi Pattern generating systems
ES2243129B1 (en) * 2004-04-23 2006-08-16 Universitat Politecnica De Catalunya OPTICAL PROFILE OF DUAL TECHNOLOGY (CONFOCAL AND INTERFEROMETRIC) FOR THE INSPECTION AND THREE-DIMENSIONAL MEASUREMENT OF SURFACES.
US20050243295A1 (en) * 2004-04-30 2005-11-03 Asml Netherlands B.V. Lithographic apparatus and device manufacturing
US7301263B2 (en) * 2004-05-28 2007-11-27 Applied Materials, Inc. Multiple electron beam system with electron transmission gates
US7846649B2 (en) * 2004-09-13 2010-12-07 Applied Materials Israel, Ltd. High resolution printer and a method for high resolution printing
US7349141B2 (en) * 2004-09-27 2008-03-25 Idc, Llc Method and post structures for interferometric modulation
US7630123B2 (en) * 2004-09-27 2009-12-08 Qualcomm Mems Technologies, Inc. Method and device for compensating for color shift as a function of angle of view
US7813026B2 (en) * 2004-09-27 2010-10-12 Qualcomm Mems Technologies, Inc. System and method of reducing color shift in a display
US7561323B2 (en) * 2004-09-27 2009-07-14 Idc, Llc Optical films for directing light towards active areas of displays
US7355780B2 (en) 2004-09-27 2008-04-08 Idc, Llc System and method of illuminating interferometric modulators using backlighting
US7710636B2 (en) 2004-09-27 2010-05-04 Qualcomm Mems Technologies, Inc. Systems and methods using interferometric optical modulators and diffusers
US7911428B2 (en) * 2004-09-27 2011-03-22 Qualcomm Mems Technologies, Inc. Method and device for manipulating color in a display
US7898521B2 (en) * 2004-09-27 2011-03-01 Qualcomm Mems Technologies, Inc. Device and method for wavelength filtering
US7710632B2 (en) * 2004-09-27 2010-05-04 Qualcomm Mems Technologies, Inc. Display device having an array of spatial light modulators with integrated color filters
US20060066586A1 (en) * 2004-09-27 2006-03-30 Gally Brian J Touchscreens for displays
US8362987B2 (en) * 2004-09-27 2013-01-29 Qualcomm Mems Technologies, Inc. Method and device for manipulating color in a display
US7807488B2 (en) * 2004-09-27 2010-10-05 Qualcomm Mems Technologies, Inc. Display element having filter material diffused in a substrate of the display element
US7928928B2 (en) * 2004-09-27 2011-04-19 Qualcomm Mems Technologies, Inc. Apparatus and method for reducing perceived color shift
US7508571B2 (en) * 2004-09-27 2009-03-24 Idc, Llc Optical films for controlling angular characteristics of displays
US7391499B2 (en) 2004-12-02 2008-06-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7126672B2 (en) * 2004-12-27 2006-10-24 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US7425713B2 (en) * 2005-01-14 2008-09-16 Arradiance, Inc. Synchronous raster scanning lithographic system
JP4587170B2 (en) * 2005-01-20 2010-11-24 キヤノン株式会社 Exposure apparatus and device manufacturing method
US7469058B2 (en) * 2005-01-28 2008-12-23 Asml Holding N.V. Method and system for a maskless lithography rasterization technique based on global optimization
US8890095B2 (en) * 2005-07-25 2014-11-18 Mapper Lithography Ip B.V. Reliability in a maskless lithography system
US7916980B2 (en) 2006-01-13 2011-03-29 Qualcomm Mems Technologies, Inc. Interconnect structure for MEMS device
US7603001B2 (en) * 2006-02-17 2009-10-13 Qualcomm Mems Technologies, Inc. Method and apparatus for providing back-lighting in an interferometric modulator display device
US8004743B2 (en) * 2006-04-21 2011-08-23 Qualcomm Mems Technologies, Inc. Method and apparatus for providing brightness control in an interferometric modulator (IMOD) display
US7936445B2 (en) * 2006-06-19 2011-05-03 Asml Netherlands B.V. Altering pattern data based on measured optical element characteristics
US7845841B2 (en) 2006-08-28 2010-12-07 Qualcomm Mems Technologies, Inc. Angle sweeping holographic illuminator
EP2069838A2 (en) * 2006-10-06 2009-06-17 Qualcomm Mems Technologies, Inc. Illumination device with built-in light coupler
KR101628340B1 (en) * 2006-10-06 2016-06-08 퀄컴 엠이엠에스 테크놀로지스, 인크. Display device, and method of forming display
US8872085B2 (en) 2006-10-06 2014-10-28 Qualcomm Mems Technologies, Inc. Display device having front illuminator with turning features
WO2008045463A2 (en) * 2006-10-10 2008-04-17 Qualcomm Mems Technologies, Inc. Display device with diffractive optics
US7864395B2 (en) * 2006-10-27 2011-01-04 Qualcomm Mems Technologies, Inc. Light guide including optical scattering elements and a method of manufacture
WO2008086827A1 (en) * 2007-01-16 2008-07-24 Carl Zeiss Smt Ag Projection exposure method and projection exposure system therefor
US7777954B2 (en) * 2007-01-30 2010-08-17 Qualcomm Mems Technologies, Inc. Systems and methods of providing a light guiding layer
US8148663B2 (en) 2007-07-31 2012-04-03 Applied Materials, Inc. Apparatus and method of improving beam shaping and beam homogenization
US8068710B2 (en) * 2007-12-07 2011-11-29 Qualcomm Mems Technologies, Inc. Decoupled holographic film and diffuser
EP2232569A2 (en) * 2007-12-17 2010-09-29 QUALCOMM MEMS Technologies, Inc. Photovoltaics with interferometric back side masks
US20090168459A1 (en) * 2007-12-27 2009-07-02 Qualcomm Incorporated Light guide including conjugate film
WO2009102733A2 (en) * 2008-02-12 2009-08-20 Qualcomm Mems Technologies, Inc. Integrated front light diffuser for reflective displays
WO2009102670A1 (en) * 2008-02-12 2009-08-20 Qualcomm Mems Technologies, Inc. Dual layer thin film holographic solar concentrator/ collector
WO2009102731A2 (en) 2008-02-12 2009-08-20 Qualcomm Mems Technologies, Inc. Devices and methods for enhancing brightness of displays using angle conversion layers
JP5619629B2 (en) 2008-02-26 2014-11-05 マッパー・リソグラフィー・アイピー・ビー．ブイ． Projection lens construction
JP5408674B2 (en) * 2008-02-26 2014-02-05 マッパー・リソグラフィー・アイピー・ビー．ブイ． Projection lens construction
US8890094B2 (en) 2008-02-26 2014-11-18 Mapper Lithography Ip B.V. Projection lens arrangement
WO2009129264A1 (en) 2008-04-15 2009-10-22 Qualcomm Mems Technologies, Inc. Light with bi-directional propagation
JP5743886B2 (en) 2008-06-04 2015-07-01 マッパー・リソグラフィー・アイピー・ビー．ブイ． Method and system for exposing a target
US20090323144A1 (en) * 2008-06-30 2009-12-31 Qualcomm Mems Technologies, Inc. Illumination device with holographic light guide
CN102160196A (en) * 2008-09-18 2011-08-17 高通Mems科技公司 Increasing angular range of light collection in solar collectors/concentrators
US20100096006A1 (en) * 2008-10-16 2010-04-22 Qualcomm Mems Technologies, Inc. Monolithic imod color enhanced photovoltaic cell
US20100245370A1 (en) * 2009-03-25 2010-09-30 Qualcomm Mems Technologies, Inc. Em shielding for display devices
CN102460633B (en) * 2009-05-20 2014-12-17 迈普尔平版印刷Ip有限公司 Pattern data conversion for lithography system
WO2010138763A1 (en) * 2009-05-29 2010-12-02 Qualcomm Mems Technologies, Inc. Illumination devices and methods of fabrication thereof
JP5355261B2 (en) * 2009-07-07 2013-11-27 株式会社日立ハイテクノロジーズ Proximity exposure apparatus, exposure light forming method for proximity exposure apparatus, and display panel substrate manufacturing method
US8427630B2 (en) * 2009-08-21 2013-04-23 Samsung Electronics Co., Ltd. Semiconductor manufacturing apparatus
JP5590485B2 (en) * 2010-03-02 2014-09-17 国立大学法人東北大学 Optical switching electron source and electron beam drawing apparatus using the same
US8848294B2 (en) 2010-05-20 2014-09-30 Qualcomm Mems Technologies, Inc. Method and structure capable of changing color saturation
US8670171B2 (en) 2010-10-18 2014-03-11 Qualcomm Mems Technologies, Inc. Display having an embedded microlens array
US8902484B2 (en) 2010-12-15 2014-12-02 Qualcomm Mems Technologies, Inc. Holographic brightness enhancement film
WO2012136434A2 (en) * 2011-04-08 2012-10-11 Asml Netherlands B.V. Lithographic apparatus, programmable patterning device and lithographic method
KR101254143B1 (en) * 2011-11-22 2013-04-18 주식회사 나래나노텍 Line light source module for exposure apparatus, and exposure apparatus and system for forming patterns having the same
USRE49732E1 (en) * 2012-03-08 2023-11-21 Asml Netherlands B.V. Charged particle lithography system with alignment sensor and beam measurement sensor
NL2010771A (en) * 2012-06-08 2013-12-10 Asml Netherlands Bv Lithography apparatus and device manufacturing method.
US9829798B2 (en) * 2013-03-15 2017-11-28 Palo Alto Research Center Incorporated Flow lithography technique to form microstructures using optical arrays
CN103279014B (en) * 2013-06-14 2016-01-20 苏州苏大维格光电科技股份有限公司 Nano-patterned substrate preparation facilities and method
US20150179563A1 (en) * 2013-07-22 2015-06-25 Kabushiki Kaisha Toshiba Semiconductor device
CN104375384B (en) * 2013-08-14 2017-03-29 上海微电子装备有限公司 A kind of exposure method and its exposure device
JP2015041648A (en) * 2013-08-20 2015-03-02 株式会社東芝 Pattern forming method, pattern forming mask and pattern forming device
CN105301912B (en) * 2014-07-11 2018-01-19 上海微电子装备（集团）股份有限公司 A kind of exposure device and exposure method for lithographic equipment
CN104865801B (en) * 2015-06-01 2017-03-01 京东方科技集团股份有限公司 Exposure device
CN106707692B (en) * 2015-07-27 2018-03-27 中国科学院理化技术研究所 A kind of maskless lithography system to be cooperated across mesostructure
CN105185694A (en) * 2015-08-20 2015-12-23 京东方科技集团股份有限公司 Polycrystalline silicon film forming method, mask, polycrystalline silicon film, and film transistor
CN105302164A (en) * 2015-11-27 2016-02-03 广东工业大学 Precision positioning method for rapid compensation of in-place errors of motion mechanism and apparatus thereof
DE112016006486B4 (en) * 2016-03-29 2022-03-31 Hitachi High-Tech Corporation electron microscope
WO2018155537A1 (en) * 2017-02-24 2018-08-30 株式会社ニコン Electron beam apparatus and exposure method, and device production method
WO2018155540A1 (en) * 2017-02-24 2018-08-30 株式会社ニコン Electron beam apparatus and exposure method, and device production method
WO2018155538A1 (en) * 2017-02-24 2018-08-30 株式会社ニコン Electron beam apparatus and exposure method, and device production method
WO2018155542A1 (en) * 2017-02-24 2018-08-30 株式会社ニコン Electron beam apparatus and exposure method, and device production method
WO2018155545A1 (en) * 2017-02-24 2018-08-30 株式会社ニコン Electron beam apparatus and exposure method, and device production method
KR102087081B1 (en) * 2017-09-13 2020-03-10 네이버랩스 주식회사 Light focusing system for detection distance enhancement of area sensor type lidar
CN111108000B (en) * 2017-09-22 2021-10-12 富士胶片株式会社 Image exposure apparatus
WO2019064508A1 (en) * 2017-09-29 2019-04-04 株式会社ニコン Electron beam apparatus, exposure method, and device manufacturing method
WO2019064519A1 (en) * 2017-09-29 2019-04-04 株式会社ニコン Electron beam apparatus, and device manufacturing method
TW201931031A (en) * 2017-12-28 2019-08-01 美商魯道夫科技股份有限公司 Separated axis lithographic tool
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Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3894332A (en) * 1972-02-11 1975-07-15 Westinghouse Electric Corp Solid state radiation sensitive field electron emitter and methods of fabrication thereof
US5932966A (en) * 1995-07-10 1999-08-03 Intevac, Inc. Electron sources utilizing patterned negative electron affinity photocathodes
WO2001009920A1 (en) * 1999-07-30 2001-02-08 Etec Systems, Inc. Electron beam column using high numerical aperture illumination of the photocathode
WO2002015223A1 (en) * 2000-08-17 2002-02-21 Applied Materials, Inc. An electron beam lithography system using a photocathode with a pattern of apertures for creating a transmission resonance
WO2002023580A1 (en) * 2000-09-18 2002-03-21 Mapper Lithography Ip B.V. Field emission photocathode array for lithography system and lithography system provided with such an array
US20030042434A1 (en) * 2001-01-31 2003-03-06 Marian Mankos Multiple electron beam lithography system with multiple beam modulated laser illumination

Family Cites Families (89)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3617125A (en) 1969-04-24 1971-11-02 Ncr Co Automatic generation of microscopic patterns in multiplicity at final size
US3861804A (en) 1971-04-01 1975-01-21 Xerox Corp Inferometry readout of phase information
US3877801A (en) 1973-12-20 1975-04-15 Itek Corp Image translation apparatus
US3973954A (en) 1973-12-28 1976-08-10 Xerox Corporation Imaging method including exposure of photoconductive imaging member through lenticular lens element
US3973953A (en) 1973-12-28 1976-08-10 Xerox Corporation Imaging method including exposure of photoconductive imaging member through lenticular lens element
US3963354A (en) * 1975-05-05 1976-06-15 Bell Telephone Laboratories, Incorporated Inspection of masks and wafers by image dissection
US4272186A (en) 1979-05-21 1981-06-09 Polaroid Corporation Camera method and apparatus for recording with selected contrast
JPS5793907U (en) 1980-11-26 1982-06-09
US4465934A (en) 1981-01-23 1984-08-14 Veeco Instruments Inc. Parallel charged particle beam exposure system
US4353628A (en) 1981-05-08 1982-10-12 Delta Scan, Inc. Apparatus for producing images on radiation sensitive recording mediums
US4377753A (en) 1981-06-01 1983-03-22 Eastman Kodak Company High resolution optical-addressing device and electronic scanner and/or printer apparatus employing such device
US4498742A (en) 1981-09-10 1985-02-12 Nippon Kogaku K.K. Illumination optical arrangement
US4460831A (en) * 1981-11-30 1984-07-17 Thermo Electron Corporation Laser stimulated high current density photoelectron generator and method of manufacture
USRE34634E (en) 1982-02-26 1994-06-07 Nippon Kogaku Kabushiki Kaisha Light illumination device
US4464030A (en) 1982-03-26 1984-08-07 Rca Corporation Dynamic accuracy X-Y positioning table for use in a high precision light-spot writing system
US4500202A (en) * 1982-05-24 1985-02-19 Itek Corporation Printed circuit board defect detection of detecting maximum line width violations
US4619508A (en) 1984-04-28 1986-10-28 Nippon Kogaku K. K. Illumination optical arrangement
DE3427611A1 (en) 1984-07-26 1988-06-09 Bille Josef LASER BEAM LITHOGRAPH
US4680855A (en) 1984-10-29 1987-07-21 Semiconductor Energy Laboratory Co., Ltd. Electronic device manufacturing methods
US4668080A (en) 1985-11-29 1987-05-26 Rca Corporation Method and apparatus for forming large area high resolution patterns
US4906922A (en) 1987-07-13 1990-03-06 Hamamatsu Photonics K. K. Voltage mapping device having fast time resolution
US5242803A (en) 1987-07-17 1993-09-07 Martin Marietta Energy Systems, Inc. Rotor assembly and assay method
US5027132A (en) 1988-03-25 1991-06-25 Texas Instruments Incorporated Position compensation of laser scan for stage movement
NO164946C (en) * 1988-04-12 1990-11-28 Metronor As OPTO-ELECTRONIC SYSTEM FOR EXACTLY MEASURING A FLAT GEOMETRY.
JP2572626B2 (en) 1988-04-28 1997-01-16 旭光学工業株式会社 Method of forming reticle and microstructure array
JP2663560B2 (en) 1988-10-12 1997-10-15 日本電気株式会社 Laser processing equipment
EP0368482A1 (en) 1988-10-14 1990-05-16 Secretary Of State For Trade And Industry In Her Britannic Majesty's Gov. Of The U.K. Of Great Britain And Northern Ireland Method of making a product with a feature having a multiplicity of fine lines
US5121160A (en) 1989-03-09 1992-06-09 Canon Kabushiki Kaisha Exposure method and apparatus
US5148322A (en) 1989-11-09 1992-09-15 Omron Tateisi Electronics Co. Micro aspherical lens and fabricating method therefor and optical device
US5436114A (en) 1989-12-06 1995-07-25 Hitachi, Ltd. Method of optical lithography with super resolution and projection printing apparatus
JP2870946B2 (en) 1990-03-13 1999-03-17 ブラザー工業株式会社 Optical scanning device
US5090803A (en) * 1990-09-21 1992-02-25 Lockheed Missiles & Space Company, Inc. Optical coordinate transfer assembly
JP3245882B2 (en) 1990-10-24 2002-01-15 株式会社日立製作所 Pattern forming method and projection exposure apparatus
US5239178A (en) * 1990-11-10 1993-08-24 Carl Zeiss Optical device with an illuminating grid and detector grid arranged confocally to an object
DE59107758D1 (en) 1990-11-10 1996-06-05 Groskopf Rudolf Dr Ing Optical scanning device with confocal beam path, in which light source and detector matrix are used
EP0486316B1 (en) 1990-11-15 2000-04-19 Nikon Corporation Projection exposure method and apparatus
US5635976A (en) 1991-07-17 1997-06-03 Micronic Laser Systems Ab Method and apparatus for the production of a structure by focused laser radiation on a photosensitively coated substrate
EP0529125B1 (en) 1991-08-27 1996-07-31 International Business Machines Corporation Method and apparatus for generating high resolution optical images
US5166508A (en) 1991-09-20 1992-11-24 United Technologies Corporation Optical processor for controlling a deformable mirror
EP0610184B1 (en) 1991-10-30 1995-05-03 Fraunhofer-Gesellschaft Zur Förderung Der Angewandten Forschung E.V. Light exposure device
US5486851A (en) 1991-10-30 1996-01-23 Fraunhofer-Gesellschaft Zur Forderung Der Angewandten Forschung E.V. Illumination device using a pulsed laser source a Schlieren optical system and a matrix addressable surface light modulator for producing images with undifracted light
DE69226511T2 (en) 1992-03-05 1999-01-28 Micronic Laser Systems Ab Method and device for exposing substrates
US5248876A (en) 1992-04-21 1993-09-28 International Business Machines Corporation Tandem linear scanning confocal imaging system with focal volumes at different heights
US5282088A (en) 1992-10-19 1994-01-25 Mark Davidson Aplanatic microlens and method for making same
JP3316936B2 (en) 1992-10-22 2002-08-19 株式会社ニコン Illumination optical device, exposure device, and transfer method using the exposure device
US5517279A (en) 1993-08-30 1996-05-14 Hugle; William B. Lens array photolithography
NL9301973A (en) 1992-11-20 1994-06-16 Samsung Electronics Co Ltd Exposure system for a projection exposure apparatus.
KR100234357B1 (en) 1992-11-21 1999-12-15 윤종용 Enlightening apparatus
US5463200A (en) 1993-02-11 1995-10-31 Lumonics Inc. Marking of a workpiece by light energy
EP0648348B1 (en) 1993-03-01 1999-04-28 General Signal Corporation Variable annular illuminator for photolithographic projection imager.
US5412200A (en) 1993-03-01 1995-05-02 Rhoads; Geoffrey B. Wide field distortion-compensating imaging system and methods
IL109589A0 (en) 1993-05-14 1994-08-26 Hughes Aircraft Co Apparatus and method for performing high spatial resolution thin film layer thickness metrology
JPH06337366A (en) 1993-05-21 1994-12-06 Xerox Corp Exposure device for raster output scanner in electrophotography printer
KR950704670A (en) 1993-09-30 1995-11-20 가따다 데쯔야 Confocal Optics
US5436725A (en) 1993-10-12 1995-07-25 Hughes Aircraft Company Cofocal optical system for thickness measurements of patterned wafers
US5539567A (en) 1994-06-16 1996-07-23 Texas Instruments Incorporated Photolithographic technique and illuminator using real-time addressable phase shift light shift
US5866911A (en) 1994-07-15 1999-02-02 Baer; Stephen C. Method and apparatus for improving resolution in scanned optical system
FR2725558B1 (en) 1994-10-10 1996-10-31 Commissariat Energie Atomique METHOD FOR FORMING HOLES IN A PHOTOSENSITIVE RESIN LAYER APPLICATION TO THE MANUFACTURE OF MICROPOINT EMISSIVE CATHODE ELECTRON SOURCES AND FLAT DISPLAY SCREENS
US5783833A (en) * 1994-12-12 1998-07-21 Nikon Corporation Method and apparatus for alignment with a substrate, using coma imparting optics
JP3251150B2 (en) 1994-12-29 2002-01-28 日本板硝子株式会社 Flat microlens array and method of manufacturing the same
JP3320294B2 (en) 1995-02-03 2002-09-03 キヤノン株式会社 Electron beam generator and image forming apparatus using the same
US5631721A (en) 1995-05-24 1997-05-20 Svg Lithography Systems, Inc. Hybrid illumination system for use in photolithography
DE19522936C2 (en) 1995-06-23 1999-01-07 Fraunhofer Ges Forschung Device for structuring a photolithographic layer
FR2737928B1 (en) 1995-08-17 1997-09-12 Commissariat Energie Atomique DEVICE FOR INSOLATING MICROMETRIC AND / OR SUBMICROMETRIC ZONES IN A PHOTOSENSITIVE LAYER AND METHOD FOR PRODUCING PATTERNS IN SUCH A LAYER
US5737084A (en) * 1995-09-29 1998-04-07 Takaoka Electric Mtg. Co., Ltd. Three-dimensional shape measuring apparatus
JP2001500628A (en) 1996-02-28 2001-01-16 ケニス シー ジョンソン Microlens scanner for microlithography and wide field confocal microscope
US5691541A (en) 1996-05-14 1997-11-25 The Regents Of The University Of California Maskless, reticle-free, lithography
DE19624276C2 (en) 1996-06-18 1999-07-08 Fraunhofer Ges Forschung Phase-modulating microstructures for highly integrated area light modulators
US5870176A (en) 1996-06-19 1999-02-09 Sandia Corporation Maskless lithography
US6177980B1 (en) 1997-02-20 2001-01-23 Kenneth C. Johnson High-throughput, maskless lithography system
US5889593A (en) 1997-02-26 1999-03-30 Kla Instruments Corporation Optical system and method for angle-dependent reflection or transmission measurement
JPH10253883A (en) 1997-03-07 1998-09-25 Fuji Photo Optical Co Ltd Projecting lens
DE19710143A1 (en) 1997-03-13 1998-09-17 Inst Physikalische Hochtech Ev Hadamard spectrometer
DE19714221A1 (en) 1997-04-07 1998-10-08 Zeiss Carl Fa Confocal microscope with a motorized scanning table
JP3411780B2 (en) 1997-04-07 2003-06-03 レーザーテック株式会社 Laser microscope and pattern inspection apparatus using this laser microscope
JP4136067B2 (en) 1997-05-02 2008-08-20 キヤノン株式会社 Detection apparatus and exposure apparatus using the same
EP0881542A1 (en) 1997-05-26 1998-12-02 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Lithography system
US5900637A (en) * 1997-05-30 1999-05-04 Massachusetts Institute Of Technology Maskless lithography using a multiplexed array of fresnel zone plates
SE9800665D0 (en) 1998-03-02 1998-03-02 Micronic Laser Systems Ab Improved method for projection printing using a micromirror SLM
US6248988B1 (en) 1998-05-05 2001-06-19 Kla-Tencor Corporation Conventional and confocal multi-spot scanning optical microscope
US6130428A (en) 1998-06-02 2000-10-10 Lsi Logic Corporation Laser fault correction of semiconductor devices
US6208411B1 (en) * 1998-09-28 2001-03-27 Kla-Tencor Corporation Massively parallel inspection and imaging system
US6188519B1 (en) 1999-01-05 2001-02-13 Kenneth Carlisle Johnson Bigrating light valve
US6424404B1 (en) 1999-01-11 2002-07-23 Kenneth C. Johnson Multi-stage microlens array
EP1058111A3 (en) 1999-05-24 2001-05-02 Nova Measuring Instruments Limited Optical inspection system and method
US6392752B1 (en) 1999-06-14 2002-05-21 Kenneth Carlisle Johnson Phase-measuring microlens microscopy
US6476401B1 (en) * 1999-09-16 2002-11-05 Applied Materials, Inc. Moving photocathode with continuous regeneration for image conversion in electron beam lithography
US6333508B1 (en) 1999-10-07 2001-12-25 Lucent Technologies, Inc. Illumination system for electron beam lithography tool
KR100572253B1 (en) 2000-08-14 2006-04-19 이리스 엘엘씨 Lithographic apparatus, device manufacturing method, and device manufactured thereby

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3894332A (en) * 1972-02-11 1975-07-15 Westinghouse Electric Corp Solid state radiation sensitive field electron emitter and methods of fabrication thereof
US5932966A (en) * 1995-07-10 1999-08-03 Intevac, Inc. Electron sources utilizing patterned negative electron affinity photocathodes
WO2001009920A1 (en) * 1999-07-30 2001-02-08 Etec Systems, Inc. Electron beam column using high numerical aperture illumination of the photocathode
WO2002015223A1 (en) * 2000-08-17 2002-02-21 Applied Materials, Inc. An electron beam lithography system using a photocathode with a pattern of apertures for creating a transmission resonance
WO2002023580A1 (en) * 2000-09-18 2002-03-21 Mapper Lithography Ip B.V. Field emission photocathode array for lithography system and lithography system provided with such an array
US20030042434A1 (en) * 2001-01-31 2003-03-06 Marian Mankos Multiple electron beam lithography system with multiple beam modulated laser illumination

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