WO2003044913A3 - Optical communication module with photonic integrated circuit chip (pic) and external booster optical amplifier - Google Patents

Optical communication module with photonic integrated circuit chip (pic) and external booster optical amplifier Download PDF

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Publication number
WO2003044913A3
WO2003044913A3 PCT/US2002/035197 US0235197W WO03044913A3 WO 2003044913 A3 WO2003044913 A3 WO 2003044913A3 US 0235197 W US0235197 W US 0235197W WO 03044913 A3 WO03044913 A3 WO 03044913A3
Authority
WO
WIPO (PCT)
Prior art keywords
txpic
integrated circuit
chips
photonic integrated
optical
Prior art date
Application number
PCT/US2002/035197
Other languages
French (fr)
Other versions
WO2003044913A2 (en
Inventor
Stephen G Grubb
Matthew L Mitchell
Robert B Taylor
Tin-Kuang Chiang
Vincent G Dominic
Original Assignee
Infinera Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Infinera Corp filed Critical Infinera Corp
Publication of WO2003044913A2 publication Critical patent/WO2003044913A2/en
Publication of WO2003044913A3 publication Critical patent/WO2003044913A3/en

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Classifications

    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12007—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer
    • G02B6/12009—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides
    • G02B6/12019—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind forming wavelength selective elements, e.g. multiplexer, demultiplexer comprising arrayed waveguide grating [AWG] devices, i.e. with a phased array of waveguides characterised by the optical interconnection to or from the AWG devices, e.g. integration or coupling with lasers or photodiodes
    • G—PHYSICS
    • G02—OPTICS
    • G02B—OPTICAL ELEMENTS, SYSTEMS OR APPARATUS
    • G02B6/00—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings
    • G02B6/10—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type
    • G02B6/12—Light guides; Structural details of arrangements comprising light guides and other optical elements, e.g. couplings of the optical waveguide type of the integrated circuit kind
    • G02B6/12004—Combinations of two or more optical elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0265—Intensity modulators
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04B—TRANSMISSION
    • H04B10/00—Transmission systems employing electromagnetic waves other than radio-waves, e.g. infrared, visible or ultraviolet light, or employing corpuscular radiation, e.g. quantum communication
    • H04B10/25—Arrangements specific to fibre transmission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
    • H01S3/05—Construction or shape of optical resonators; Accommodation of active medium therein; Shape of active medium
    • H01S3/06—Construction or shape of active medium
    • H01S3/063—Waveguide lasers, i.e. whereby the dimensions of the waveguide are of the order of the light wavelength
    • H01S3/067—Fibre lasers
    • H01S3/06754—Fibre amplifiers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/026—Monolithically integrated components, e.g. waveguides, monitoring photo-detectors, drivers
    • H01S5/0268—Integrated waveguide grating router, e.g. emission of a multi-wavelength laser array is combined by a "dragon router"
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4012—Beam combining, e.g. by the use of fibres, gratings, polarisers, prisms
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
    • H01S5/4031—Edge-emitting structures

Abstract

A C- and/or L-band booster optical amplifier (60) is utilized at the output (26) of a semiconductor transmitter photonic integrated circuit (TxPIC) chip (10) or the optical combined outputs (26) of multiple semiconductor transmitter photonic integrated circuit (TxPIC) chips (10) employed in an optical communication module, the deployment of integrated semiconductor optical amplifiers (SOAs) on the TxPIC chips can be eliminated. This would reduce both the complexity in designing and fabricating these chips as well as reducing the power consumption of the TxPIC chips. The deployment of such a Tx booster optical amplifier (60) would also take into consideration the nonlinear effects of difficult high loss single mode fiber (SMF) or other fiber type links by allowing a higher power per channel to be achieved compared to the case where channel amplification is attempted solely on the TxPIC chip.
PCT/US2002/035197 2001-11-06 2002-10-31 Optical communication module with photonic integrated circuit chip (pic) and external booster optical amplifier WO2003044913A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US34604401P 2001-11-06 2001-11-06
US60/346,044 2001-11-06

Publications (2)

Publication Number Publication Date
WO2003044913A2 WO2003044913A2 (en) 2003-05-30
WO2003044913A3 true WO2003044913A3 (en) 2003-10-30

Family

ID=23357686

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/035197 WO2003044913A2 (en) 2001-11-06 2002-10-31 Optical communication module with photonic integrated circuit chip (pic) and external booster optical amplifier

Country Status (2)

Country Link
US (4) US7062111B2 (en)
WO (1) WO2003044913A2 (en)

Families Citing this family (31)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002353891A (en) * 2001-05-24 2002-12-06 Fujitsu Ltd Method and device for optical fiber transmission
US7672546B2 (en) * 2001-10-09 2010-03-02 Infinera Corporation Optical transport network having a plurality of monolithic photonic integrated circuit semiconductor chips
DE60208416T2 (en) * 2001-10-09 2006-06-22 Infinera Corp., Sunnyvale Digital Optic Network Architecture
WO2003038501A2 (en) * 2001-11-01 2003-05-08 Massachusetts Institute Of Technology Arrayed waveguide grating
US10012797B1 (en) * 2002-10-08 2018-07-03 Infinera Corporation Monolithic photonic integrated circuit (PIC) with a plurality of integrated arrays of laser sources and modulators employing an extended identical active layer (EIAL)
US7747114B2 (en) * 2002-10-08 2010-06-29 Infinera Corporation Tilted combiners/decombiners and photonic integrated circuits (PICs) employing the same
US7412121B2 (en) * 2002-10-24 2008-08-12 Applied Research And Photonics, Inc. Nanophotonic integrated circuit and fabrication thereof
US6961356B2 (en) * 2002-12-16 2005-11-01 Alcatel Integrated wavelength combiner/locker
US7424041B2 (en) * 2004-04-29 2008-09-09 Avago Technologies Fiber Ip Pte Ltd. Wide tuneable laser sources
JP2007201213A (en) * 2006-01-27 2007-08-09 Opnext Japan Inc Optical receiving module
JP4849915B2 (en) * 2006-03-15 2012-01-11 富士通株式会社 Optical integrated device and optical module
US9425917B1 (en) 2006-03-15 2016-08-23 Neophotonics Corporation High data rate long reach transceiver using wavelength multiplexed architecture
US8111996B2 (en) * 2008-02-22 2012-02-07 Infinera Corporation Compact optical multiplexer and demultiplexer
US9344196B1 (en) 2009-05-28 2016-05-17 Freedom Photonics, Llc. Integrated interferometric optical transmitter
US8401405B2 (en) * 2009-05-28 2013-03-19 Freedom Photonics, Llc. Monolithic widely-tunable coherent receiver
US7999988B2 (en) * 2009-12-30 2011-08-16 Intel Corporation Optical modulator using a dual output laser embedded in a mach zehnder interferometer
TWI412149B (en) * 2010-12-16 2013-10-11 Univ Nat Central Laser energy conversion device
KR101754280B1 (en) * 2011-05-04 2017-07-07 한국전자통신연구원 Semiconductor optical devcies and methods of fabricating the same
US8617925B2 (en) 2011-08-09 2013-12-31 Soitec Methods of forming bonded semiconductor structures in 3D integration processes using recoverable substrates, and bonded semiconductor structures formed by such methods
US8842945B2 (en) 2011-08-09 2014-09-23 Soitec Methods of forming three dimensionally integrated semiconductor systems including photoactive devices and semiconductor-on-insulator substrates
US8728863B2 (en) 2011-08-09 2014-05-20 Soitec Methods of forming bonded semiconductor structures including interconnect layers having one or more of electrical, optical, and fluidic interconnects therein, and bonded semiconductor structures formed using such methods
US9025241B2 (en) * 2011-10-14 2015-05-05 Kotura, Inc. Gain medium providing laser and amplifier functionality to optical device
JP2013168500A (en) * 2012-02-15 2013-08-29 Mitsubishi Electric Corp Optical semiconductor device
CN104412148B (en) * 2012-05-17 2017-10-10 菲尼萨公司 The direct modulation laser applied for EPON (PON)
US9525490B2 (en) * 2012-07-26 2016-12-20 Aurrion, Inc. Reconfigurable optical transmitter
CN106019859B (en) * 2016-07-22 2017-11-28 合肥芯碁微电子装备有限公司 A kind of high power UV laser diode for laser direct-writing exposure machine
US10320152B2 (en) 2017-03-28 2019-06-11 Freedom Photonics Llc Tunable laser
TW202020495A (en) * 2018-11-21 2020-06-01 源傑科技股份有限公司 Silicon photonic integrated system in a switch
US10649245B1 (en) * 2019-03-11 2020-05-12 Globalfoundries Inc. Electro-optic modulators with stacked metal, dielectric, and active layers
WO2021061890A1 (en) 2019-09-27 2021-04-01 Ipg Photonics Corporation Photonic device
CN111162454B (en) * 2020-01-02 2021-03-12 中国科学院半导体研究所 Broadband tuning system and tuning method

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0636908A1 (en) * 1993-07-27 1995-02-01 AT&T Corp. Wavelength division multiplexed optical communication transmitters
US6275317B1 (en) * 1998-03-10 2001-08-14 Agere Systems Optoelectronics Guardian Corp. Hybrid integration of a wavelength selectable laser source and optical amplifier/modulator

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2565099B2 (en) * 1993-08-09 1996-12-18 日本電気株式会社 Optical non-reciprocal circuit
US5483372A (en) * 1994-11-29 1996-01-09 International Business Machines Corporation Single and multichannel transmission over long distances using repeated level-crossing remodulation
JP3299101B2 (en) * 1995-12-15 2002-07-08 日本電気株式会社 WDM optical communication equipment
WO1998009397A1 (en) * 1996-08-27 1998-03-05 At & T Corp. Simultaneous wavelength-division multiplexing and broadcast transmission system
US6304350B1 (en) * 1997-05-27 2001-10-16 Lucent Technologies Inc Temperature compensated multi-channel, wavelength-division-multiplexed passive optical network
US5870512A (en) * 1997-05-30 1999-02-09 Sdl, Inc. Optimized interferometrically modulated array source
JPH11119064A (en) * 1997-10-17 1999-04-30 Fujitsu Ltd Optical transmission terminal device
US6055250A (en) * 1997-11-07 2000-04-25 Lucent Technologies Inc. Multifrequency laser having reduced wave mixing
US6240118B1 (en) * 1998-11-16 2001-05-29 Lucent Technologies Inc. Multichannel laser transmitter with a single output port
US5987050A (en) * 1998-11-16 1999-11-16 Lucent Technologies, Inc. Laser transmitter based on a coupler and having a controlled output port
JP2000174397A (en) * 1998-12-02 2000-06-23 Nec Corp Multiple wavelength light source unit and oscillation frequency control method
JP2000236299A (en) * 1998-12-18 2000-08-29 Fujitsu Ltd Optical transmitter and optical transmission system
EP1017242B1 (en) * 1998-12-28 2007-01-31 STMicroelectronics S.r.l. Optical cross-connect architecture for WDM telecommunication systems
JP2000208859A (en) * 1999-01-13 2000-07-28 Hitachi Ltd Optical transmission device
FR2803114B1 (en) * 1999-12-23 2004-09-10 Cit Alcatel OPTICAL AMPLIFIER IN BANDS C AND L PLUS SUBSEA TRANSMISSION SYSTEMS
US6501866B2 (en) * 2000-02-25 2002-12-31 Mahi Networks. Inc. Method and apparatus for cross-connecting optical transmission signals
JP3862995B2 (en) * 2001-02-16 2006-12-27 富士通株式会社 Optical switch module
US8095007B2 (en) * 2001-05-16 2012-01-10 Tellabs Operations, Inc. Optical add/drop multiplexer using integrated optical components
WO2003032021A2 (en) * 2001-10-09 2003-04-17 Infinera Corporation TRANSMITTER PHOTONIC INTEGRATED CIRCUITS (TxPIC) AND OPTICAL TRANSPORT NETWORKS EMPLOYING TxPICs
US6700517B1 (en) * 2002-12-24 2004-03-02 The United States Of America As Represented By The Secretary Of The Navy Photonic analog-to-digital converter

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0636908A1 (en) * 1993-07-27 1995-02-01 AT&T Corp. Wavelength division multiplexed optical communication transmitters
US6275317B1 (en) * 1998-03-10 2001-08-14 Agere Systems Optoelectronics Guardian Corp. Hybrid integration of a wavelength selectable laser source and optical amplifier/modulator

Non-Patent Citations (5)

* Cited by examiner, † Cited by third party
Title
KOREN U ET AL: "PHOTONIC INTEGRATED CIRCUITS FOR TELECOMMUNICATION -PRESENT STATUS AND FUTURE TRENDS-", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, 1990, pages 773 - 775, XP000178124, ISSN: 0021-4922 *
KUDO K ET AL: "1.55-MUM WAVELENGTH-SELECTABLE MICROARRAY DFB-LD'S WITH INTEGRATED MMI COMBINER, SOA, AND EA-MODULATOR", OPTICAL FIBER COMMUNICATION CONFERENCE. (OFC). TECHNICAL DIGEST POSTCONFERENCE EDITION. BALTIMORE, MD, MARCH 7-10, 2000, NEW YORK, NY: IEEE, US, vol. 1 OF 4, 7 March 2000 (2000-03-07), pages TUL5 - 1-TUL5-3, XP001017431, ISBN: 0-7803-5952-6 *
MAEDA M ET AL: "PHOTONIC INTEGRATED CIRCUIT COMBINING TWO GAAS DISTRIBUTED BRAGG REFLECTOR LASER DIODES FOR GENERATION OF THE BEAT SIGNAL", JAPANESE JOURNAL OF APPLIED PHYSICS, PUBLICATION OFFICE JAPANESE JOURNAL OF APPLIED PHYSICS. TOKYO, JP, vol. 31, no. 2B, 15 February 1992 (1992-02-15), pages L183 - L185, XP002001249, ISSN: 0021-4922 *
SUHIR E: "The future of microelectronics and photonics and the role of mechanics and materials", ELECTRONIC PACKAGING TECHNOLOGY CONFERENCE, 1997. PROCEEDINGS OF THE 1997 1ST SINGAPORE 8-10 OCT. 1997, NEW YORK, NY, USA,IEEE, US, 8 October 1997 (1997-10-08), pages 18 - 28, XP010309998, ISBN: 0-7803-4157-0 *
YOUNG M G ET AL: "A 16X1 WDM TRANSMITTER WITH INTEGRATED DBR LASERS AND,ELECTROABSORPTION MODULATORS", INTEGRATED PHOTONICS RESEARCH, WASHINGTON, DC, US, vol. 10, 1993, pages 414 - 417, XP000472984 *

Also Published As

Publication number Publication date
US7010185B2 (en) 2006-03-07
US20030099425A1 (en) 2003-05-29
US20040258422A1 (en) 2004-12-23
US20050169640A1 (en) 2005-08-04
US7130499B2 (en) 2006-10-31
US20040247233A1 (en) 2004-12-09
US7062111B2 (en) 2006-06-13
US7058248B2 (en) 2006-06-06
WO2003044913A2 (en) 2003-05-30

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