WO2003045110A1 - Silicon microphone - Google Patents
Silicon microphone Download PDFInfo
- Publication number
- WO2003045110A1 WO2003045110A1 PCT/US2002/032749 US0232749W WO03045110A1 WO 2003045110 A1 WO2003045110 A1 WO 2003045110A1 US 0232749 W US0232749 W US 0232749W WO 03045110 A1 WO03045110 A1 WO 03045110A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- diaphragm
- transducer
- substrate
- stop bumps
- back plate
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B3/00—Devices comprising flexible or deformable elements, e.g. comprising elastic tongues or membranes
- B81B3/0064—Constitution or structural means for improving or controlling the physical properties of a device
- B81B3/0067—Mechanical properties
- B81B3/0072—For controlling internal stress or strain in moving or flexible elements, e.g. stress compensating layers
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R1/00—Details of transducers, loudspeakers or microphones
- H04R1/02—Casings; Cabinets ; Supports therefor; Mountings therein
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/005—Electrostatic transducers using semiconductor materials
-
- H—ELECTRICITY
- H04—ELECTRIC COMMUNICATION TECHNIQUE
- H04R—LOUDSPEAKERS, MICROPHONES, GRAMOPHONE PICK-UPS OR LIKE ACOUSTIC ELECTROMECHANICAL TRANSDUCERS; DEAF-AID SETS; PUBLIC ADDRESS SYSTEMS
- H04R19/00—Electrostatic transducers
- H04R19/02—Loudspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2201/00—Specific applications of microelectromechanical systems
- B81B2201/02—Sensors
- B81B2201/0257—Microphones or microspeakers
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B2203/00—Basic microelectromechanical structures
- B81B2203/01—Suspended structures, i.e. structures allowing a movement
- B81B2203/0127—Diaphragms, i.e. structures separating two media that can control the passage from one medium to another; Membranes, i.e. diaphragms with filtering function
Definitions
- the present invention relates to silicon microphones, and more particularly, to a silicon microphone having a diaphragm with reduced residual stress.
- Micro-electromechanical systems (MEMS) technology allows the manufacture of small (microns to hundreds of micron) electromechanical components using the precision manufacturing techniques of microelectronics.
- MEMS Micro-electromechanical systems
- These devices typically consist of thin membranes and beams micromachined from films that are deposited or laminated on a substrate or, etched from the substrate itself. These micro-machined films ultimately serve as the mechanical structure and/or electrical connection.
- a sacrificial layer is deposited first and then patterned using photolithography prior to film deposition or lamination. Patterning creates regions on the substrate that are free of the sacrificial layer and, thus the film can be deposited directly onto the substrate, i.e. anchored to the substrate.
- the portion of the structure that is not anchored to the substrate is physically separated or disconnected from the substrate by removing the sacrificial layer underneath the micromachined structure.
- Film stress is the residual stress that is present in the film after formation.
- the resulting micromachined structure will also be in tensile stress unless the micromachined structure is designed to strain and relieve the stress.
- Micromachined cantilevers are a typical example of a structure that can relieve the residual stress.
- MEMS microphone condenser microphone
- the part of the micromachined structure that actuates with an acoustic signal is the diaphragm. Stress on the diaphragm has a direct effect on the sensitivity of the microphone.
- Tensile stress severely decreases the mechanical compliance of a microphone diaphragm.
- the following idealized formula shows that decreasing the mechanical compliance decreases the sensitivity of a capacitor microphone:
- C MS is the mechanical compliance in meters per Newton
- S is the area
- E is the bias
- x 0 is the distance between the microphone diaphragm and back plate
- Sens is the open circuit sensitivity of the microphone.
- the diaphragm is largely free with the exception of a narrow arm or arms.
- the function of the narrow arm is simply to provide an electrical connection to the diaphragm. This way the mechanically free diaphragm is allowed to strain and release the residual stress. Since the diaphragm is not rigidly attached to the substrate, it is necessary to mechanically confine the diaphragm on the substrate to prevent the diaphragm from detaching completely while handling.
- the diaphragm hovers over an acoustic port that has been etched into the substrate (the substrate opening, which serves as the acoustic port, is smaller than the diaphragm diameter).
- the back plate covers the diaphragm and provides the necessary confinement. Thus the diaphragm is confined by the substrate and the back plate located on either side of the diaphragm.
- a microphone diaphragm design such as the free plate design is possible by using a fabrication process that is capable of depositing many conformal layers of thin film (See the above referenced PCT application).
- This invention describes a means to protect the diaphragm by constraining its out of plane travel yet which will strain to relieve in-plane stresses.
- a diaphragm anchoring scheme which renders the diaphragm essentially free, i.e., the film stress is relieved and yet, the entire diaphragm is anchored in place on the substrate.
- This diaphragm design can be used for fabricating MEMS microphones with characteristic acoustic sensitivity that is relatively insensitive to the (diaphragm) residual film stress. In this design, the insensitivity of the diaphragm's compliance to residual film stress is achieved through the special anchoring scheme. Since the diaphragm is physically anchored or attached to the support substrate, no additional structure is required to contain the diaphragm.
- the transducer comprises a substrate forming a support structure and having an opening.
- the substrate can be formed of a conductive material or of a semi-conductor material, such as silicon, provided the substrate has an appropriately insulating film layer.
- the substrate can be formed of a wholly electrically insulating material.
- a thin-film structure forming a diaphragm responsive to fluid-transmitted acoustic pressure is disposed over the opening.
- the transducer further includes a plurality of supports and means for connecting the periphery of the diaphragm to the supports.
- the connecting means strains to permit the diaphragm to move to relieve film stress in the diaphragm.
- the transducer still further includes a plurality of stop bumps disposed between the substrate and the diaphragm. The stop bumps determine the separation of the diaphragm from the substrate when the transducer is biased. It is contemplated that the transducer is a microphone.
- stop bumps are fabricated either from an insulating material or from a conductive material having an outer layer of insulating material.
- each of the stop bumps is anchored to the substrate and not to the diaphragm, or each of the stop bumps is anchored to the diaphragm and not to the substrate.
- the connecting means comprises a plurality of arms extending generally tangentially outwardly from the diaphragm edge.
- the transducer includes a back plate, that the back plate is smaller than the diaphragm and the center of the back plate is aligned with the center of the diaphragm to minimize parasitic capacitance.
- FIG. 1 is a cutaway perspective view of a transducer according to the invention
- FIG.2 is a top, bottom and side view of a diaphragm for the transducer of FIG. 1 ;
- FIG. 3 is a top view of the transducer of FIG. 1.
- FIG. 1 A solid-state transducer 10 according to the invention is illustrated in FIG. 1.
- the transducer 10 is shown as a condenser microphone.
- the transducer could be other devices, such as a pressure sensor or an accelerometer.
- the transducer 10 comprises a semi-conductor substrate 12 forming a support structure and having an opening 12a.
- the transducer 10 further includes a thin-film structure forming a diaphragm 14 responsive to fluid-transmitted acoustic pressure.
- the diaphragm 14 is disposed over the opening 12a.
- the diaphragm 14 includes a plurality of tangentially extending arms 14a.
- a back plate 16 is attached to the substrate 12, which has been coated with an insulating material.
- the back plate 16 may be formed of the same silicon as the substrate 12.
- the transducer 10 further includes a plurality of semi-conductor supports 18 coupling each of the arms 14a to the substrate 12.
- a plurality of stop bumps 20 are disposed between the substrate 12 and the diaphragm 14.
- the stop bumps 20 determine the separation of the diaphragm 14 from the substrate 12, and hence the backplate 16, when the transducer 12 is biased.
- a back volume 24 can be located underneath the back plate 16 and may be defined by using the substrate opening 12a to cover an open-ended cavity.
- FIG. 2 Three different views of the diaphragm 14 are illustrated in FIG. 2.
- the top view shows the diaphragm 14 anchored to the substrate 12 via the spiral arms 14a. When the entire structure is released from the substrate 12 (with the exception of the anchor points), the spiral arms 14a strain and thus relieve the build-in film stress in the diaphragm 14.
- the entire diaphragm 14, including the spiral arms 14a is a conductor which may be doped silicon, poly-silicon, or silicon-germanium.
- the bottom view of FIG. 2 shows the stop bumps 20.
- the stop bumps 20 are fabricated from an insulator.
- the stop bumps 20 are a conductor with an outer insulating layer.
- the transducer 10 has twenty of the stop bumps 20.
- Each of the stop bumps 20 is anchored to the substrate 12 and is not attached to the diaphragm 14 located just above the bumps. Having the stop bumps 20 not attached to the diaphragm 14 allows the diaphragm 14 to move when relieving the film stress.
- the stop bumps 20 serve as controlled boundary condition when the diaphragm 14 is responding to sound waves and when the diaphragm 14 is biased. Specifically, the stop bumps provide a simply supported boundary to the stress-relieved diaphragm 14 and also determine the nominal distance between the diaphragm 14 and the back plate 16 when the transducer 10 is biased. The distance between the top of the bumps 20 and the bottom of the diaphragm 14 when the diaphragm 14 is not biased, as well as the diameter of the bumps 20, depend on the available fabrication technology.
- the acoustic path, or leak defined by a path from the ambient to the back volume which is surrounded by the bumps 20, the diaphragm 14 and the substrate 12, is necessary in order to accommodate varying ambient pressure.
- additional bumps 20 may be placed underneath the diaphragm 14 or at the perimeter of the diaphragm 14 to restrict the acoustic leak from ambient to the back volume 24.
- the gap set by the height of the bumps 20 can be adjusted, or the overlap of the diaphragm 14 and the substrate hole can be changed.
- the side view on the bottom of FIG. 2 shows the location of the back plate 16.
- the back plate 16 is a conductor.
- the back plate 16 may be perforated with holes or slots to provide desired damping of the movement of the diaphragm 14 when actuating and to lower the acoustic noise.
- the back plate 16 must be much thicker or stiffer than the diaphragm 14.
- the back plate 16 must be smaller than the diaphragm 14, and the center of the back plate 16 must be aligned to the center of the diaphragm 14 in order to minimize parasitic capacitance.
- the substrate 12 is shown having a tapered hole, or acoustic port.
- FIG. 1 shows the diaphragm 14 anchored to the substrate 12 at the end of the spiral arms 14a.
- the substrate 12 is coated with a layer of insulator to avoid electrical shorting of the back plate 16 and the diaphragm 14.
- An electrical connection (not shown) is provided to both the back plate 16 and the diaphragm 14. The electrical connection may be achieved trivially using conducting runners. Therefore, electrical connections are not shown in the FIGS..
- the transducer 10 For operation as a microphone, the transducer 10, as shown in FIG. 1, is placed over a hole in a cavity with a known back volume. The diaphragm 14 is then electrically biased against the back plate 16. The spiral arms 14a, which anchor the diaphragm 14, allow the diaphragm 14 to be nearly stress free before biasing. Upon biasing, the diaphragm 14 rests against the bumps 20. On exposure of the diaphragm 14 to sound waves, actuation of the diaphragm 14 occurs, and the electrical signal generated by the moving diaphragm center is detected using a high impedance amplifier. As stated above, the back plate 16 is stiffer than the diaphragm 14.
- FIG. 3 shows the geometrical dimensions of a version of the microphone that incorporated the diaphragm design. This is a top view of the diaphragm 14.
- the diaphragm 14 has an effective diameter 30 of 550 ⁇ m.
- the diaphragm 14, including the tangential arms 14a, has a total diameter 32 of 71.0 ⁇ m.
- Each tangential arm 14a has a width 34 of 16 ⁇ m., and a radius of curvature 36 of 150 ⁇ m.
- the back plate 16 has a diameter 38 of 400 ⁇ m, and the distance between the diaphragm 14 and the back plate 16 is 4 ⁇ m.
- the outline of the back plate 16 located underneath the diaphragm 14 is also shown in FIG. 3. As stated earlier, the diameter of the back plate 16 is smaller than the diameter of the diaphragm 14 to minimize the parasitic capacitance.
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020047007582A KR100909351B1 (en) | 2001-11-20 | 2002-10-15 | Silicon microphone |
DE60231151T DE60231151D1 (en) | 2001-11-20 | 2002-10-15 | SILICON MICROPHONE |
EP02797046A EP1466500B1 (en) | 2001-11-20 | 2002-10-15 | Silicon microphone |
JP2003546619A JP4381144B2 (en) | 2001-11-20 | 2002-10-15 | Silicon microphone |
DK02797046T DK1466500T3 (en) | 2001-11-20 | 2002-10-15 | Silicon microphone |
AU2002361569A AU2002361569A1 (en) | 2001-11-20 | 2002-10-15 | Silicon microphone |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/989,513 US7023066B2 (en) | 2001-11-20 | 2001-11-20 | Silicon microphone |
US09/989,513 | 2001-11-20 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003045110A1 true WO2003045110A1 (en) | 2003-05-30 |
Family
ID=25535177
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/032749 WO2003045110A1 (en) | 2001-11-20 | 2002-10-15 | Silicon microphone |
Country Status (9)
Country | Link |
---|---|
US (1) | US7023066B2 (en) |
EP (1) | EP1466500B1 (en) |
JP (1) | JP4381144B2 (en) |
KR (1) | KR100909351B1 (en) |
CN (1) | CN100539740C (en) |
AU (1) | AU2002361569A1 (en) |
DE (1) | DE60231151D1 (en) |
DK (1) | DK1466500T3 (en) |
WO (1) | WO2003045110A1 (en) |
Cited By (13)
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WO2006123263A1 (en) * | 2005-05-17 | 2006-11-23 | Nxp B.V. | Improved membrane for a mems condenser microphone |
EP1762542A2 (en) | 2005-09-08 | 2007-03-14 | Robert Bosch Gmbh | Micromechanical sensor element and its manufacturing method |
WO2007100068A1 (en) * | 2006-02-24 | 2007-09-07 | Yamaha Corporation | Condenser microphone |
WO2007107735A1 (en) | 2006-03-20 | 2007-09-27 | Wolfson Microelectronics Plc | Mems device |
DE102006055147A1 (en) * | 2006-11-03 | 2008-05-08 | Infineon Technologies Ag | Sound transducer structure and method for producing a sound transducer structure |
US8126167B2 (en) | 2006-03-29 | 2012-02-28 | Yamaha Corporation | Condenser microphone |
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US8338898B2 (en) | 2004-12-06 | 2012-12-25 | Austriamicrosystems Ag | Micro electro mechanical system (MEMS) microphone having a thin-film construction |
US8422702B2 (en) | 2006-12-06 | 2013-04-16 | Electronics And Telecommunications Research Institute | Condenser microphone having flexure hinge diaphragm and method of manufacturing the same |
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US8338898B2 (en) | 2004-12-06 | 2012-12-25 | Austriamicrosystems Ag | Micro electro mechanical system (MEMS) microphone having a thin-film construction |
US8309386B2 (en) | 2005-04-25 | 2012-11-13 | Analog Devices, Inc. | Process of forming a microphone using support member |
US8422703B2 (en) | 2005-04-25 | 2013-04-16 | Analog Devices, Inc. | Support apparatus for microphone diaphragm |
US8129803B2 (en) | 2005-04-25 | 2012-03-06 | Analog Devices, Inc. | Micromachined microphone and multisensor and method for producing same |
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US8072010B2 (en) | 2005-05-17 | 2011-12-06 | Knowles Electronics Asia PTE, Ltd. | Membrane for a MEMS condenser microphone |
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Also Published As
Publication number | Publication date |
---|---|
JP4381144B2 (en) | 2009-12-09 |
EP1466500A1 (en) | 2004-10-13 |
DK1466500T3 (en) | 2009-05-25 |
EP1466500B1 (en) | 2009-02-11 |
US7023066B2 (en) | 2006-04-04 |
JP2005535152A (en) | 2005-11-17 |
CN100539740C (en) | 2009-09-09 |
KR20040063964A (en) | 2004-07-15 |
CN1589587A (en) | 2005-03-02 |
AU2002361569A1 (en) | 2003-06-10 |
US20060006483A1 (en) | 2006-01-12 |
DE60231151D1 (en) | 2009-03-26 |
KR100909351B1 (en) | 2009-07-24 |
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