WO2003046996A1 - Vertical mosfets having crossing trench-based gate electrodes that extend into deeper trench-based source electrodes and methods of forming same - Google Patents
Vertical mosfets having crossing trench-based gate electrodes that extend into deeper trench-based source electrodes and methods of forming same Download PDFInfo
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- WO2003046996A1 WO2003046996A1 PCT/US2002/037187 US0237187W WO03046996A1 WO 2003046996 A1 WO2003046996 A1 WO 2003046996A1 US 0237187 W US0237187 W US 0237187W WO 03046996 A1 WO03046996 A1 WO 03046996A1
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- Prior art keywords
- trench
- region
- source electrode
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- base region
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Classifications
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823487—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of vertical transistor structures, i.e. with channel vertical to the substrate surface
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- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/085—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including only semiconductor components of a single kind including field-effect components only
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- H01L29/7832—Field effect transistors with field effect produced by an insulated gate with multiple gate structure the structure comprising a MOS gate and at least one non-MOS gate, e.g. JFET or MESFET gate
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02798452A EP1449258A1 (en) | 2001-11-26 | 2002-11-19 | Vertical mosfets having crossing trench-based gate electrodes that extend into deeper trench-based source electrodes and methods of forming same |
AU2002363937A AU2002363937A1 (en) | 2001-11-26 | 2002-11-19 | Vertical mosfets having crossing trench-based gate electrodes that extend into deeper trench-based source electrodes and methods of forming same |
JP2003548313A JP2005510880A (en) | 2001-11-26 | 2002-11-19 | Vertical MOSFET and method for forming the vertical MOSFET |
KR10-2004-7007933A KR20040058318A (en) | 2001-11-26 | 2002-11-19 | Vertical MOSFETs having crossing trench-based gate electrodes that extend into deeper trench-based source electrodes and methods of forming same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US09/995,019 | 2001-11-26 | ||
US09/995,019 US6621121B2 (en) | 1998-10-26 | 2001-11-26 | Vertical MOSFETs having trench-based gate electrodes within deeper trench-based source electrodes |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003046996A1 true WO2003046996A1 (en) | 2003-06-05 |
Family
ID=25541305
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/037187 WO2003046996A1 (en) | 2001-11-26 | 2002-11-19 | Vertical mosfets having crossing trench-based gate electrodes that extend into deeper trench-based source electrodes and methods of forming same |
Country Status (7)
Country | Link |
---|---|
US (2) | US6621121B2 (en) |
EP (1) | EP1449258A1 (en) |
JP (1) | JP2005510880A (en) |
KR (1) | KR20040058318A (en) |
CN (1) | CN1695251A (en) |
AU (1) | AU2002363937A1 (en) |
WO (1) | WO2003046996A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102005046406A1 (en) * | 2005-09-28 | 2007-04-05 | Infineon Technologies Ag | Electrical current`s current intensity controlling device for e.g. LED, has electrodes electrically connected with front side of semiconductor body and current/voltage source and with rear side of body and electrical load, respectively |
EP1999792A2 (en) * | 2006-03-10 | 2008-12-10 | Alpha & Omega Semiconductor Limited | Shielded gate trench(sgt) mosfet cells implemented with a schottky source contact |
Families Citing this family (137)
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DE19859502C2 (en) * | 1998-12-22 | 2000-12-07 | Siemens Ag | Junction field effect transistor with a higher doped connection region |
JP2001085685A (en) * | 1999-09-13 | 2001-03-30 | Shindengen Electric Mfg Co Ltd | Transistor |
US7345342B2 (en) * | 2001-01-30 | 2008-03-18 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
US6683346B2 (en) * | 2001-03-09 | 2004-01-27 | Fairchild Semiconductor Corporation | Ultra dense trench-gated power-device with the reduced drain-source feedback capacitance and Miller charge |
JP4421144B2 (en) * | 2001-06-29 | 2010-02-24 | 株式会社東芝 | Semiconductor device |
US6635544B2 (en) | 2001-09-07 | 2003-10-21 | Power Intergrations, Inc. | Method of fabricating a high-voltage transistor with a multi-layered extended drain structure |
US6573558B2 (en) * | 2001-09-07 | 2003-06-03 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-layered extended drain structure |
US7221011B2 (en) * | 2001-09-07 | 2007-05-22 | Power Integrations, Inc. | High-voltage vertical transistor with a multi-gradient drain doping profile |
US7786533B2 (en) | 2001-09-07 | 2010-08-31 | Power Integrations, Inc. | High-voltage vertical transistor with edge termination structure |
JP4117385B2 (en) * | 2002-05-21 | 2008-07-16 | 独立行政法人 宇宙航空研究開発機構 | Semiconductor device having cosmic ray breakdown tolerance |
US6921699B2 (en) * | 2002-09-30 | 2005-07-26 | International Rectifier Corporation | Method for manufacturing a semiconductor device with a trench termination |
DE10317383B4 (en) * | 2003-04-15 | 2008-10-16 | Infineon Technologies Ag | Junction Field Effect Transistor (JFET) with compensation region and field plate |
US7652326B2 (en) | 2003-05-20 | 2010-01-26 | Fairchild Semiconductor Corporation | Power semiconductor devices and methods of manufacture |
GB0327791D0 (en) * | 2003-11-29 | 2003-12-31 | Koninkl Philips Electronics Nv | Trench insulated gate field effect transistor |
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- 2002-11-19 CN CNA02827542XA patent/CN1695251A/en active Pending
- 2002-11-19 AU AU2002363937A patent/AU2002363937A1/en not_active Abandoned
- 2002-11-19 KR KR10-2004-7007933A patent/KR20040058318A/en not_active Application Discontinuation
- 2002-11-19 JP JP2003548313A patent/JP2005510880A/en active Pending
- 2002-11-19 EP EP02798452A patent/EP1449258A1/en not_active Withdrawn
- 2002-11-19 WO PCT/US2002/037187 patent/WO2003046996A1/en not_active Application Discontinuation
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Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
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DE102005046406A1 (en) * | 2005-09-28 | 2007-04-05 | Infineon Technologies Ag | Electrical current`s current intensity controlling device for e.g. LED, has electrodes electrically connected with front side of semiconductor body and current/voltage source and with rear side of body and electrical load, respectively |
US7629753B2 (en) | 2005-09-28 | 2009-12-08 | Infineon Technologies, Ag | Device for regulating the intensity of an electric current |
DE102005046406B4 (en) * | 2005-09-28 | 2010-02-25 | Infineon Technologies Ag | A semiconductor device comprising an electrical load and a semiconductor device for controlling the magnitude of an electric current |
EP1999792A2 (en) * | 2006-03-10 | 2008-12-10 | Alpha & Omega Semiconductor Limited | Shielded gate trench(sgt) mosfet cells implemented with a schottky source contact |
EP1999792A4 (en) * | 2006-03-10 | 2009-05-20 | Alpha & Omega Semiconductor | Shielded gate trench(sgt) mosfet cells implemented with a schottky source contact |
Also Published As
Publication number | Publication date |
---|---|
US6764889B2 (en) | 2004-07-20 |
US6621121B2 (en) | 2003-09-16 |
EP1449258A1 (en) | 2004-08-25 |
JP2005510880A (en) | 2005-04-21 |
KR20040058318A (en) | 2004-07-03 |
CN1695251A (en) | 2005-11-09 |
AU2002363937A1 (en) | 2003-06-10 |
US20020036319A1 (en) | 2002-03-28 |
US20040016963A1 (en) | 2004-01-29 |
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