WO2003054921A3 - Method for the production of iii-v laser components - Google Patents

Method for the production of iii-v laser components Download PDF

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Publication number
WO2003054921A3
WO2003054921A3 PCT/EP2002/012799 EP0212799W WO03054921A3 WO 2003054921 A3 WO2003054921 A3 WO 2003054921A3 EP 0212799 W EP0212799 W EP 0212799W WO 03054921 A3 WO03054921 A3 WO 03054921A3
Authority
WO
WIPO (PCT)
Prior art keywords
iii
substrate
production
deposited
layer
Prior art date
Application number
PCT/EP2002/012799
Other languages
German (de)
French (fr)
Other versions
WO2003054921B1 (en
WO2003054921A2 (en
Inventor
Holger Juergensen
Alois Krost
Armin Dadgar
Original Assignee
Aixtron Ag
Holger Juergensen
Alois Krost
Armin Dadgar
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE10206750A external-priority patent/DE10206750A1/en
Application filed by Aixtron Ag, Holger Juergensen, Alois Krost, Armin Dadgar filed Critical Aixtron Ag
Priority to JP2003555550A priority Critical patent/JP2005513797A/en
Priority to AU2002356608A priority patent/AU2002356608A1/en
Priority to KR10-2004-7009461A priority patent/KR20040068266A/en
Priority to EP02805280A priority patent/EP1459365A2/en
Publication of WO2003054921A2 publication Critical patent/WO2003054921A2/en
Publication of WO2003054921A3 publication Critical patent/WO2003054921A3/en
Publication of WO2003054921B1 publication Critical patent/WO2003054921B1/en
Priority to US10/872,902 priority patent/US20050025909A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/32308—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm
    • H01S5/32341—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength less than 900 nm blue laser based on GaN or GaP
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/0237—Materials
    • H01L21/02373—Group 14 semiconducting materials
    • H01L21/02381—Silicon, silicon germanium, germanium
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02367—Substrates
    • H01L21/02433—Crystal orientation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02436—Intermediate layers between substrates and deposited layers
    • H01L21/02439—Materials
    • H01L21/02455—Group 13/15 materials
    • H01L21/02458—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02365—Forming inorganic semiconducting materials on a substrate
    • H01L21/02518—Deposited layers
    • H01L21/02521—Materials
    • H01L21/02538—Group 13/15 materials
    • H01L21/0254—Nitrides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/021—Silicon based substrates

Abstract

The invention relates to a method for the production of III-V laser components, whereby a III-V semiconductor layer is deposited on a silicon substrate in a process chamber of a reactor from a gaseous starting material. According to the invention, an economical method for the production of qualitatively high-grade laser may be achieved, whereby, firstly, an Al-containing buffer layer is deposited on the Si substrate, in particular a Si(III) substrate, on which the III-V semiconductor layer, in particular, GaN layer is then deposited such that the lattice plane thereof runs parallel to the cleavage direction of the substrate, whereby, on cleaving the substrate plane-parallel layer, cleavage surfaces are formed.
PCT/EP2002/012799 2001-12-21 2002-11-15 Method for the production of iii-v laser components WO2003054921A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
JP2003555550A JP2005513797A (en) 2001-12-21 2002-11-15 Manufacturing method of III-V laser structural parts
AU2002356608A AU2002356608A1 (en) 2001-12-21 2002-11-15 Method for the production of iii-v laser components
KR10-2004-7009461A KR20040068266A (en) 2001-12-21 2002-11-15 Method for producing iii-v laser components
EP02805280A EP1459365A2 (en) 2001-12-21 2002-11-15 Method for the production of iii-v laser components
US10/872,902 US20050025909A1 (en) 2001-12-21 2004-06-21 Method for the production of III-V laser components

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
DE10163714 2001-12-21
DE10163714.4 2001-12-21
DE10206750A DE10206750A1 (en) 2001-12-21 2002-02-19 Process for the manufacture of III-V laser components
DE10206750.3 2002-02-19

Related Child Applications (1)

Application Number Title Priority Date Filing Date
US10/872,902 Continuation US20050025909A1 (en) 2001-12-21 2004-06-21 Method for the production of III-V laser components

Publications (3)

Publication Number Publication Date
WO2003054921A2 WO2003054921A2 (en) 2003-07-03
WO2003054921A3 true WO2003054921A3 (en) 2003-12-24
WO2003054921B1 WO2003054921B1 (en) 2004-03-04

Family

ID=26010857

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2002/012799 WO2003054921A2 (en) 2001-12-21 2002-11-15 Method for the production of iii-v laser components

Country Status (5)

Country Link
US (1) US20050025909A1 (en)
EP (1) EP1459365A2 (en)
JP (1) JP2005513797A (en)
AU (1) AU2002356608A1 (en)
WO (1) WO2003054921A2 (en)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11308477B2 (en) 2005-04-26 2022-04-19 Spriv Llc Method of reducing fraud in on-line transactions
US11818287B2 (en) 2017-10-19 2023-11-14 Spriv Llc Method and system for monitoring and validating electronic transactions
US8362503B2 (en) 2007-03-09 2013-01-29 Cree, Inc. Thick nitride semiconductor structures with interlayer structures
US7825432B2 (en) * 2007-03-09 2010-11-02 Cree, Inc. Nitride semiconductor structures with interlayer structures
US11354667B2 (en) 2007-05-29 2022-06-07 Spriv Llc Method for internet user authentication
DE102009051520B4 (en) 2009-10-31 2016-11-03 X-Fab Semiconductor Foundries Ag Process for the production of silicon semiconductor wafers with layer structures for the integration of III-V semiconductor devices
US11792314B2 (en) 2010-03-28 2023-10-17 Spriv Llc Methods for acquiring an internet user's consent to be located and for authenticating the location information
US9595805B2 (en) 2014-09-22 2017-03-14 International Business Machines Corporation III-V photonic integrated circuits on silicon substrate
US9344200B2 (en) 2014-10-08 2016-05-17 International Business Machines Corporation Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxial semiconductor material formed using lateral overgrowth
US9395489B2 (en) 2014-10-08 2016-07-19 International Business Machines Corporation Complementary metal oxide semiconductor device with III-V optical interconnect having III-V epitaxially formed material

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121121A (en) * 1997-11-07 2000-09-19 Toyoda Gosei Co., Ltd Method for manufacturing gallium nitride compound semiconductor
WO2001043174A2 (en) * 1999-12-13 2001-06-14 North Carolina State University Fabrication of gallium nitride layers on textured silicon substrates
WO2001095380A1 (en) * 2000-06-09 2001-12-13 Centre National De La Recherche Scientifique Preparation method of a coating of gallium nitride
WO2002048434A2 (en) * 2000-12-14 2002-06-20 Nitronex Corporation Gallium nitride materials and methods for forming layers thereof

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR0174303B1 (en) * 1994-06-24 1999-02-01 가나이 쯔또무 Semiconductor device and method of manufacturing the same
JP3557011B2 (en) * 1995-03-30 2004-08-25 株式会社東芝 Semiconductor light emitting device and manufacturing method thereof
JP3763753B2 (en) * 2001-06-05 2006-04-05 豊田合成株式会社 Group III nitride compound semiconductor device and method for manufacturing the same
JP2003152220A (en) * 2001-11-15 2003-05-23 Sharp Corp Manufacturing method for semiconductor light emitting element and the semiconductor light emitting element

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6121121A (en) * 1997-11-07 2000-09-19 Toyoda Gosei Co., Ltd Method for manufacturing gallium nitride compound semiconductor
WO2001043174A2 (en) * 1999-12-13 2001-06-14 North Carolina State University Fabrication of gallium nitride layers on textured silicon substrates
WO2001095380A1 (en) * 2000-06-09 2001-12-13 Centre National De La Recherche Scientifique Preparation method of a coating of gallium nitride
WO2002048434A2 (en) * 2000-12-14 2002-06-20 Nitronex Corporation Gallium nitride materials and methods for forming layers thereof

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
MARCHAND H ET AL: "METALORGANIC CHEMICAL VAPOR DEPOSITION OF GAN ON SI(111): STRESS CONTROL AND APPLICATION TO FIELD-EFFECT TRANSISTORS", JOURNAL OF APPLIED PHYSICS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 89, no. 12, 15 June 2001 (2001-06-15), pages 7846 - 7851, XP001066072, ISSN: 0021-8979 *

Also Published As

Publication number Publication date
AU2002356608A1 (en) 2003-07-09
JP2005513797A (en) 2005-05-12
AU2002356608A8 (en) 2003-07-09
US20050025909A1 (en) 2005-02-03
WO2003054921B1 (en) 2004-03-04
WO2003054921A2 (en) 2003-07-03
EP1459365A2 (en) 2004-09-22

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