WO2003058682A3 - A METHOD FOR FORMING A POWER SEMICONDUCTOR AS IN FIGURE 5 HAVING A SUBSTRATE (2), A VOLTAGE SUSTAINING EPITAXIAL LAYER (1) WITH AT LEAST A TRENCH (52), A DOPED REGION (5a) ADJACENT AND SURROUNDING THE TRENCH. - Google Patents
A METHOD FOR FORMING A POWER SEMICONDUCTOR AS IN FIGURE 5 HAVING A SUBSTRATE (2), A VOLTAGE SUSTAINING EPITAXIAL LAYER (1) WITH AT LEAST A TRENCH (52), A DOPED REGION (5a) ADJACENT AND SURROUNDING THE TRENCH. Download PDFInfo
- Publication number
- WO2003058682A3 WO2003058682A3 PCT/US2002/041797 US0241797W WO03058682A3 WO 2003058682 A3 WO2003058682 A3 WO 2003058682A3 US 0241797 W US0241797 W US 0241797W WO 03058682 A3 WO03058682 A3 WO 03058682A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- trench
- dopant
- substrate
- epitaxial layer
- forming
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title abstract 4
- 238000000034 method Methods 0.000 title abstract 3
- 239000004065 semiconductor Substances 0.000 title abstract 2
- 239000002019 doping agent Substances 0.000 abstract 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 abstract 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 abstract 1
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 abstract 1
- 229910052581 Si3N4 Inorganic materials 0.000 abstract 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 229910052796 boron Inorganic materials 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000011810 insulating material Substances 0.000 abstract 1
- 239000000463 material Substances 0.000 abstract 1
- 229910052698 phosphorus Inorganic materials 0.000 abstract 1
- 239000011574 phosphorus Substances 0.000 abstract 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract 1
- 229920005591 polysilicon Polymers 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
- 235000012239 silicon dioxide Nutrition 0.000 abstract 1
- 239000000377 silicon dioxide Substances 0.000 abstract 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
- H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0642—Isolation within the component, i.e. internal isolation
- H01L29/0649—Dielectric regions, e.g. SiO2 regions, air gaps
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1004—Base region of bipolar transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66674—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
- H01L29/66712—Vertical DMOS transistors, i.e. VDMOS transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
- H01L29/7395—Vertical transistors, e.g. vertical IGBT
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02806284A EP1468453A4 (en) | 2001-12-31 | 2002-12-30 | High voltage power mosfet having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source |
JP2003558901A JP2005514785A (en) | 2001-12-31 | 2002-12-30 | High voltage power MOSFET having a voltage sustaining region including a doped column formed by etching a trench using an etchant gas that is also a doping source |
AU2002367408A AU2002367408A1 (en) | 2001-12-31 | 2002-12-30 | A method for forming a power semiconductor as in figure 5 having a substrate (2), a voltage sustaining epitaxial layer (1) with at least a trench (52), a doped region (5a) adjacent and surrounding the trench. |
KR10-2004-7010418A KR20040066202A (en) | 2001-12-31 | 2002-12-30 | High voltage power mosfet having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/039,284 | 2001-12-31 | ||
US10/039,284 US6750104B2 (en) | 2001-12-31 | 2001-12-31 | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003058682A2 WO2003058682A2 (en) | 2003-07-17 |
WO2003058682A3 true WO2003058682A3 (en) | 2003-12-18 |
Family
ID=21904649
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/041797 WO2003058682A2 (en) | 2001-12-31 | 2002-12-30 | A METHOD FOR FORMING A POWER SEMICONDUCTOR AS IN FIGURE 5 HAVING A SUBSTRATE (2), A VOLTAGE SUSTAINING EPITAXIAL LAYER (1) WITH AT LEAST A TRENCH (52), A DOPED REGION (5a) ADJACENT AND SURROUNDING THE TRENCH. |
Country Status (8)
Country | Link |
---|---|
US (2) | US6750104B2 (en) |
EP (1) | EP1468453A4 (en) |
JP (1) | JP2005514785A (en) |
KR (1) | KR20040066202A (en) |
CN (1) | CN100409452C (en) |
AU (1) | AU2002367408A1 (en) |
TW (1) | TWI284925B (en) |
WO (1) | WO2003058682A2 (en) |
Families Citing this family (28)
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US6750104B2 (en) * | 2001-12-31 | 2004-06-15 | General Semiconductor, Inc. | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source |
US6576516B1 (en) * | 2001-12-31 | 2003-06-10 | General Semiconductor, Inc. | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon |
US6656797B2 (en) | 2001-12-31 | 2003-12-02 | General Semiconductor, Inc. | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation |
US20030151092A1 (en) * | 2002-02-11 | 2003-08-14 | Feng-Tso Chien | Power mosfet device with reduced snap-back and being capable of increasing avalanche-breakdown current endurance, and method of manafacturing the same |
US6686244B2 (en) * | 2002-03-21 | 2004-02-03 | General Semiconductor, Inc. | Power semiconductor device having a voltage sustaining region that includes doped columns formed with a single ion implantation step |
US7087472B2 (en) * | 2003-07-18 | 2006-08-08 | Semiconductor Components Industries, L.L.C. | Method of making a vertical compound semiconductor field effect transistor device |
US7482220B2 (en) * | 2005-02-15 | 2009-01-27 | Semiconductor Components Industries, L.L.C. | Semiconductor device having deep trench charge compensation regions and method |
US20060255401A1 (en) * | 2005-05-11 | 2006-11-16 | Yang Robert K | Increasing breakdown voltage in semiconductor devices with vertical series capacitive structures |
US20070012983A1 (en) * | 2005-07-15 | 2007-01-18 | Yang Robert K | Terminations for semiconductor devices with floating vertical series capacitive structures |
US7554137B2 (en) * | 2005-10-25 | 2009-06-30 | Infineon Technologies Austria Ag | Power semiconductor component with charge compensation structure and method for the fabrication thereof |
DE102006002065B4 (en) * | 2006-01-16 | 2007-11-29 | Infineon Technologies Austria Ag | Compensation component with reduced and adjustable on-resistance |
US20090166722A1 (en) * | 2007-12-28 | 2009-07-02 | Alpha & Omega Semiconductor, Ltd: | High voltage structures and methods for vertical power devices with improved manufacturability |
US7943463B2 (en) * | 2009-04-02 | 2011-05-17 | Micron Technology, Inc. | Methods of semiconductor processing involving forming doped polysilicon on undoped polysilicon |
CN101958283B (en) * | 2009-07-09 | 2014-07-09 | 上海华虹宏力半导体制造有限公司 | Method and structure for obtaining structure containing alternately arranged P-type and N-type semiconductor thin layers |
US20110068397A1 (en) * | 2009-09-24 | 2011-03-24 | Disney Donald R | Power devices and associated methods of manufacturing |
US8525260B2 (en) * | 2010-03-19 | 2013-09-03 | Monolithic Power Systems, Inc. | Super junction device with deep trench and implant |
US8803205B2 (en) * | 2011-05-31 | 2014-08-12 | Infineon Technologies Austria Ag | Transistor with controllable compensation regions |
US8698229B2 (en) * | 2011-05-31 | 2014-04-15 | Infineon Technologies Austria Ag | Transistor with controllable compensation regions |
KR102031174B1 (en) | 2012-11-16 | 2019-10-11 | 삼성전자주식회사 | Semiconductor device and method of manufacturing the same and apparatus for processing a substrate |
TW201440145A (en) * | 2013-04-09 | 2014-10-16 | Anpec Electronics Corp | Method for fabricating semiconductor power device |
US9887283B2 (en) * | 2013-05-10 | 2018-02-06 | Alpha And Omega Semiconductor Incorporated | Process method and structure for high voltage MOSFETs |
US9112022B2 (en) | 2013-07-31 | 2015-08-18 | Infineon Technologies Austria Ag | Super junction structure having a thickness of first and second semiconductor regions which gradually changes from a transistor area into a termination area |
US20150035002A1 (en) * | 2013-07-31 | 2015-02-05 | Infineon Technologies Austria Ag | Super Junction Semiconductor Device and Manufacturing Method |
CN104716044B (en) * | 2014-12-19 | 2018-09-18 | 成都士兰半导体制造有限公司 | Semiconductor devices and forming method thereof |
CN104779295B (en) * | 2015-04-24 | 2018-11-06 | 无锡同方微电子有限公司 | Half super node MOSFET structure of one kind and preparation method thereof |
TWI632622B (en) * | 2017-10-26 | 2018-08-11 | 立錡科技股份有限公司 | High voltage metal oxide semiconductor device and manufacturing method thereof |
US11569345B2 (en) * | 2020-11-23 | 2023-01-31 | Alpha And Omega Semiconductor (Cayman) Ltd. | Gas dopant doped deep trench super junction high voltage MOSFET |
CN113394298B (en) * | 2021-06-23 | 2023-06-16 | 电子科技大学 | LDMOS device with ultralow specific on-resistance and manufacturing method thereof |
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US5912497A (en) * | 1997-08-06 | 1999-06-15 | North Carolina State University | Semiconductor switching devices having buried gate electrodes and methods of forming same |
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US6656797B2 (en) * | 2001-12-31 | 2003-12-02 | General Semiconductor, Inc. | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and ion implantation |
US6566201B1 (en) * | 2001-12-31 | 2003-05-20 | General Semiconductor, Inc. | Method for fabricating a high voltage power MOSFET having a voltage sustaining region that includes doped columns formed by rapid diffusion |
US6576516B1 (en) * | 2001-12-31 | 2003-06-10 | General Semiconductor, Inc. | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching and diffusion from regions of oppositely doped polysilicon |
US6750104B2 (en) * | 2001-12-31 | 2004-06-15 | General Semiconductor, Inc. | High voltage power MOSFET having a voltage sustaining region that includes doped columns formed by trench etching using an etchant gas that is also a doping source |
-
2001
- 2001-12-31 US US10/039,284 patent/US6750104B2/en not_active Expired - Fee Related
-
2002
- 2002-12-24 TW TW091137180A patent/TWI284925B/en not_active IP Right Cessation
- 2002-12-30 AU AU2002367408A patent/AU2002367408A1/en not_active Abandoned
- 2002-12-30 KR KR10-2004-7010418A patent/KR20040066202A/en active IP Right Grant
- 2002-12-30 CN CNB028265432A patent/CN100409452C/en not_active Expired - Fee Related
- 2002-12-30 JP JP2003558901A patent/JP2005514785A/en active Pending
- 2002-12-30 WO PCT/US2002/041797 patent/WO2003058682A2/en active Application Filing
- 2002-12-30 EP EP02806284A patent/EP1468453A4/en not_active Withdrawn
-
2004
- 2004-02-23 US US10/784,516 patent/US7019360B2/en not_active Expired - Fee Related
Patent Citations (1)
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US5912497A (en) * | 1997-08-06 | 1999-06-15 | North Carolina State University | Semiconductor switching devices having buried gate electrodes and methods of forming same |
Also Published As
Publication number | Publication date |
---|---|
TWI284925B (en) | 2007-08-01 |
US6750104B2 (en) | 2004-06-15 |
TW200304170A (en) | 2003-09-16 |
AU2002367408A1 (en) | 2003-07-24 |
JP2005514785A (en) | 2005-05-19 |
EP1468453A4 (en) | 2008-12-10 |
US7019360B2 (en) | 2006-03-28 |
KR20040066202A (en) | 2004-07-23 |
CN100409452C (en) | 2008-08-06 |
US20040164348A1 (en) | 2004-08-26 |
WO2003058682A2 (en) | 2003-07-17 |
US20030122189A1 (en) | 2003-07-03 |
EP1468453A2 (en) | 2004-10-20 |
AU2002367408A8 (en) | 2003-07-24 |
CN1610975A (en) | 2005-04-27 |
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