WO2003058770A3 - Vertical cavity surface emitting laser including indium and nitrogen in the active region - Google Patents

Vertical cavity surface emitting laser including indium and nitrogen in the active region Download PDF

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Publication number
WO2003058770A3
WO2003058770A3 PCT/US2002/039604 US0239604W WO03058770A3 WO 2003058770 A3 WO2003058770 A3 WO 2003058770A3 US 0239604 W US0239604 W US 0239604W WO 03058770 A3 WO03058770 A3 WO 03058770A3
Authority
WO
WIPO (PCT)
Prior art keywords
barrier layers
emitting laser
surface emitting
cavity surface
vertical cavity
Prior art date
Application number
PCT/US2002/039604
Other languages
French (fr)
Other versions
WO2003058770A2 (en
Inventor
Ralph H Johnson
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Publication of WO2003058770A2 publication Critical patent/WO2003058770A2/en
Publication of WO2003058770A3 publication Critical patent/WO2003058770A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/3211—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures characterised by special cladding layers, e.g. details on band-discontinuities
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/32—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures
    • H01S5/323—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/3235—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers
    • H01S5/32358—Structure or shape of the active region; Materials used for the active region comprising PN junctions, e.g. hetero- or double- heterostructures in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser emitting light at a wavelength longer than 1000 nm, e.g. InP-based 1300 nm and 1500 nm lasers containing very small amounts, usually less than 1%, of an additional III or V compound to decrease the bandgap strongly in a non-linear way by the bowing effect
    • H01S5/32366—(In)GaAs with small amount of N
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/343—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser
    • H01S5/34346—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers in AIIIBV compounds, e.g. AlGaAs-laser, InP-based laser characterised by the materials of the barrier layers

Abstract

Quantum wells and associated barrier layers can be grown to include nitrogen (N), aluminum (AI), antimony (Sb), phosphorous (P) and/or indium (In) placed within or about a typical GaAs substrate to achieve long wavelength VCSEL performance, e.g., within the (1260) to (1650) nm range. In accordance with features of the present invention, a vertical cavity surface emitting laser (VCSEL) can include at least one quantum well 11 comprised of InGaAsN; barrier layers (12) sandwiching said at least one quantum well 11; and confinement layers (13) sandwiching said barrier layers (12). Confinement (13) and barrier layers (12) can comprise AIGaAs, GaAsN. Barrier layers (12) can also comprise InGaAsN. Quantum wells 11 can also include Sb. Quantum wells (11) can be developed up to and including 50 Å in thickness. Quantum wells (11) can also be developed with a depth of at least 40 meV.
PCT/US2002/039604 2001-12-20 2002-12-11 Vertical cavity surface emitting laser including indium and nitrogen in the active region WO2003058770A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/026,019 2001-12-20
US10/026,019 US7408964B2 (en) 2001-12-20 2001-12-20 Vertical cavity surface emitting laser including indium and nitrogen in the active region

Publications (2)

Publication Number Publication Date
WO2003058770A2 WO2003058770A2 (en) 2003-07-17
WO2003058770A3 true WO2003058770A3 (en) 2004-02-12

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/039604 WO2003058770A2 (en) 2001-12-20 2002-12-11 Vertical cavity surface emitting laser including indium and nitrogen in the active region

Country Status (3)

Country Link
US (1) US7408964B2 (en)
TW (1) TWI246241B (en)
WO (1) WO2003058770A2 (en)

Families Citing this family (3)

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US6822995B2 (en) 2002-02-21 2004-11-23 Finisar Corporation GaAs/AI(Ga)As distributed bragg reflector on InP
US7295586B2 (en) * 2002-02-21 2007-11-13 Finisar Corporation Carbon doped GaAsSb suitable for use in tunnel junctions of long-wavelength VCSELs
CN101432936B (en) 2004-10-01 2011-02-02 菲尼萨公司 Vertical cavity surface emitting laser having multiple top-side contacts

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WO2003058770A2 (en) 2003-07-17
TW200301606A (en) 2003-07-01
US7408964B2 (en) 2008-08-05
TWI246241B (en) 2005-12-21
US20030118068A1 (en) 2003-06-26

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