WO2003058774A2 - Asymmetric distributed bragg reflector for vertical cavity surface emitting lasers - Google Patents
Asymmetric distributed bragg reflector for vertical cavity surface emitting lasers Download PDFInfo
- Publication number
- WO2003058774A2 WO2003058774A2 PCT/US2002/039825 US0239825W WO03058774A2 WO 2003058774 A2 WO2003058774 A2 WO 2003058774A2 US 0239825 W US0239825 W US 0239825W WO 03058774 A2 WO03058774 A2 WO 03058774A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- mirror
- transition
- doped
- region
- semiconductor layer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
- H01S5/125—Distributed Bragg reflector [DBR] lasers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
- H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
- H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/30—Structure or shape of the active region; Materials used for the active region
- H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
- H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020047010027A KR100558320B1 (en) | 2001-12-28 | 2002-12-13 | Asymmetric Distributed Bragg Reflector For Vertical Cavity Surface Emitting Lasers |
JP2003558979A JP4177262B2 (en) | 2001-12-28 | 2002-12-13 | Asymmetric distributed Bragg reflector for vertical cavity surface emitting lasers |
DE60238275T DE60238275D1 (en) | 2001-12-28 | 2002-12-13 | ASYMMETRICALLY DISTRIBUTED BRAGG REFLECTOR FOR SURFACE EMITTING LASER WITH VERTICAL RESONATOR |
AT02798511T ATE488039T1 (en) | 2001-12-28 | 2002-12-13 | ASYMMETRICALLY DISTRIBUTED BRAGG REFLECTOR FOR SURFACE EMITTING LASER WITH VERTICAL RESONATOR |
EP02798511A EP1459417B1 (en) | 2001-12-28 | 2002-12-13 | Asymmetric distributed bragg reflector for vertical cavity surface emitting lasers |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/028,435 US6850548B2 (en) | 2001-12-28 | 2001-12-28 | Assymmetric distributed Bragg reflector for vertical cavity surface emitting lasers |
US10/028,435 | 2001-12-28 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003058774A2 true WO2003058774A2 (en) | 2003-07-17 |
WO2003058774A3 WO2003058774A3 (en) | 2004-03-25 |
Family
ID=21843427
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/039825 WO2003058774A2 (en) | 2001-12-28 | 2002-12-13 | Asymmetric distributed bragg reflector for vertical cavity surface emitting lasers |
Country Status (9)
Country | Link |
---|---|
US (1) | US6850548B2 (en) |
EP (1) | EP1459417B1 (en) |
JP (1) | JP4177262B2 (en) |
KR (1) | KR100558320B1 (en) |
CN (1) | CN1613170A (en) |
AT (1) | ATE488039T1 (en) |
DE (1) | DE60238275D1 (en) |
TW (1) | TWI237935B (en) |
WO (1) | WO2003058774A2 (en) |
Families Citing this family (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6975663B2 (en) * | 2001-02-26 | 2005-12-13 | Ricoh Company, Ltd. | Surface-emission laser diode operable in the wavelength band of 1.1-7μm and optical telecommunication system using such a laser diode |
US7245647B2 (en) * | 1999-10-28 | 2007-07-17 | Ricoh Company, Ltd. | Surface-emission laser diode operable in the wavelength band of 1.1-1.7mum and optical telecommunication system using such a laser diode |
US7590159B2 (en) * | 2001-02-26 | 2009-09-15 | Ricoh Company, Ltd. | Surface-emission laser diode operable in the wavelength band of 1.1-1.7 micrometers and optical telecommunication system using such a laser diode |
US6898215B2 (en) * | 2001-04-11 | 2005-05-24 | Optical Communication Products, Inc. | Long wavelength vertical cavity surface emitting laser |
US7596165B2 (en) * | 2004-08-31 | 2009-09-29 | Finisar Corporation | Distributed Bragg Reflector for optoelectronic device |
US7920612B2 (en) * | 2004-08-31 | 2011-04-05 | Finisar Corporation | Light emitting semiconductor device having an electrical confinement barrier near the active region |
US7829912B2 (en) | 2006-07-31 | 2010-11-09 | Finisar Corporation | Efficient carrier injection in a semiconductor device |
US8815617B2 (en) * | 2004-10-01 | 2014-08-26 | Finisar Corporation | Passivation of VCSEL sidewalls |
US7860137B2 (en) | 2004-10-01 | 2010-12-28 | Finisar Corporation | Vertical cavity surface emitting laser with undoped top mirror |
WO2006039341A2 (en) * | 2004-10-01 | 2006-04-13 | Finisar Corporation | Vertical cavity surface emitting laser having multiple top-side contacts |
US7826506B2 (en) | 2004-10-01 | 2010-11-02 | Finisar Corporation | Vertical cavity surface emitting laser having multiple top-side contacts |
KR100737609B1 (en) * | 2005-09-29 | 2007-07-10 | 엘지전자 주식회사 | Optical pumped semiconductor vertical external cavity surface emitting laser and fabricating method thereof |
JP4300245B2 (en) * | 2006-08-25 | 2009-07-22 | キヤノン株式会社 | Optical element equipped with multilayer reflector, surface emitting laser |
US8527939B2 (en) * | 2006-09-14 | 2013-09-03 | Sap Ag | GUI modeling of knowledge base in a modeling environment |
US8031752B1 (en) | 2007-04-16 | 2011-10-04 | Finisar Corporation | VCSEL optimized for high speed data |
US8213474B2 (en) * | 2007-12-21 | 2012-07-03 | Finisar Corporation | Asymmetric DBR pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption |
CN102611000B (en) * | 2012-03-23 | 2013-09-25 | 中国科学院长春光学精密机械与物理研究所 | High-efficiency vertical cavity surface emitting semiconductor laser with asymmetric optical field distribution |
KR102182921B1 (en) * | 2016-08-08 | 2020-11-25 | 피니사 코포레이숀 | Etched planarization VCSEL |
CN110021875B (en) * | 2018-01-09 | 2022-05-13 | 苏州乐琻半导体有限公司 | Surface emitting laser device and light emitting device including the same |
EP4213319A1 (en) * | 2018-01-18 | 2023-07-19 | IQE plc | Porous distributed bragg reflectors for laser applications |
EP3540879A1 (en) * | 2018-03-15 | 2019-09-18 | Koninklijke Philips N.V. | Vertical cavity surface emitting laser device with integrated tunnel junction |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0536944A2 (en) | 1991-10-11 | 1993-04-14 | AT&T Corp. | Elimination of heterojunction band discontinuities |
Family Cites Families (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5745515A (en) * | 1996-07-18 | 1998-04-28 | Honeywell Inc. | Self-limiting intrinsically eye-safe laser utilizing an increasing absorption layer |
US5764671A (en) * | 1996-10-21 | 1998-06-09 | Motorola, Inc. | VCSEL with selective oxide transition regions |
US5848086A (en) * | 1996-12-09 | 1998-12-08 | Motorola, Inc. | Electrically confined VCSEL |
JP3713956B2 (en) * | 1998-05-29 | 2005-11-09 | 富士ゼロックス株式会社 | Manufacturing method of surface emitting semiconductor laser device |
US6301281B1 (en) | 1998-08-31 | 2001-10-09 | Agilent Technologies, Inc. | Semiconductor laser having co-doped distributed bragg reflectors |
US6744805B2 (en) * | 2000-04-05 | 2004-06-01 | Nortel Networks Limited | Single mode operation of microelectromechanically tunable, half-symmetric, vertical cavity surface emitting lasers |
US6611543B2 (en) * | 2000-12-23 | 2003-08-26 | Applied Optoelectronics, Inc. | Vertical-cavity surface-emitting laser with metal mirror and method of fabrication of same |
US6693933B2 (en) * | 2001-03-15 | 2004-02-17 | Honeywell International Inc. | Vertical cavity master oscillator power amplifier |
US6898215B2 (en) * | 2001-04-11 | 2005-05-24 | Optical Communication Products, Inc. | Long wavelength vertical cavity surface emitting laser |
-
2001
- 2001-12-28 US US10/028,435 patent/US6850548B2/en not_active Expired - Lifetime
-
2002
- 2002-12-13 JP JP2003558979A patent/JP4177262B2/en not_active Expired - Fee Related
- 2002-12-13 KR KR1020047010027A patent/KR100558320B1/en not_active IP Right Cessation
- 2002-12-13 EP EP02798511A patent/EP1459417B1/en not_active Expired - Lifetime
- 2002-12-13 WO PCT/US2002/039825 patent/WO2003058774A2/en active Application Filing
- 2002-12-13 DE DE60238275T patent/DE60238275D1/en not_active Expired - Lifetime
- 2002-12-13 AT AT02798511T patent/ATE488039T1/en not_active IP Right Cessation
- 2002-12-13 CN CNA028261887A patent/CN1613170A/en active Pending
- 2002-12-26 TW TW091137479A patent/TWI237935B/en not_active IP Right Cessation
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0536944A2 (en) | 1991-10-11 | 1993-04-14 | AT&T Corp. | Elimination of heterojunction band discontinuities |
Non-Patent Citations (2)
Title |
---|
CHALMERS ET AL.: "Low resistance wavelength-reproducible p-type (AI, Ga) As distributed bragg reflectors grown by molecular beam epitaxy", APPLIED PHYSICS LETTERS, vol. 62, no. 14, 4120919, pages 1585 - 1587, XP000355000, DOI: doi:10.1063/1.109608 |
SUGIMOTO ET AL.: "Very low threshold current density in vertical-cavity surface-emitting laser diodes with periodically doped distributed Bragg reflectors", ELECTRONICS LETTERS, vol. 28, no. 4, 2200819, pages 385 - 387, XP000292299 |
Also Published As
Publication number | Publication date |
---|---|
KR100558320B1 (en) | 2006-03-10 |
KR20040093676A (en) | 2004-11-06 |
EP1459417B1 (en) | 2010-11-10 |
JP2005514796A (en) | 2005-05-19 |
EP1459417A2 (en) | 2004-09-22 |
WO2003058774A3 (en) | 2004-03-25 |
TWI237935B (en) | 2005-08-11 |
JP4177262B2 (en) | 2008-11-05 |
DE60238275D1 (en) | 2010-12-23 |
US6850548B2 (en) | 2005-02-01 |
ATE488039T1 (en) | 2010-11-15 |
TW200301605A (en) | 2003-07-01 |
CN1613170A (en) | 2005-05-04 |
US20030123513A1 (en) | 2003-07-03 |
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