WO2003058774A3 - Asymmetric distributed bragg reflector for vertical cavity surface emitting lasers - Google Patents

Asymmetric distributed bragg reflector for vertical cavity surface emitting lasers Download PDF

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Publication number
WO2003058774A3
WO2003058774A3 PCT/US2002/039825 US0239825W WO03058774A3 WO 2003058774 A3 WO2003058774 A3 WO 2003058774A3 US 0239825 W US0239825 W US 0239825W WO 03058774 A3 WO03058774 A3 WO 03058774A3
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WO
WIPO (PCT)
Prior art keywords
different
transition
dbr
surface emitting
transition regions
Prior art date
Application number
PCT/US2002/039825
Other languages
French (fr)
Other versions
WO2003058774A2 (en
Inventor
Samuel S Villareal
Ralph H Johnson
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Priority to KR1020047010027A priority Critical patent/KR100558320B1/en
Priority to JP2003558979A priority patent/JP4177262B2/en
Priority to AT02798511T priority patent/ATE488039T1/en
Priority to EP02798511A priority patent/EP1459417B1/en
Priority to DE60238275T priority patent/DE60238275D1/en
Publication of WO2003058774A2 publication Critical patent/WO2003058774A2/en
Publication of WO2003058774A3 publication Critical patent/WO2003058774A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H01S5/18313—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation by oxidizing at least one of the DBR layers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/305—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure
    • H01S5/3054—Structure or shape of the active region; Materials used for the active region characterised by the doping materials used in the laser structure p-doping

Abstract

An asymmetric distributed Bragg reflector (DBR)suitable for use in vertical cavity surface emitting lasers. The asymmetric DBR is comprised of stacked material layers having different indexes of refraction that are joined using asymmetrical transition regions in which the transition steps within a transition region have different material compositions, different doping levels, and different layer thicknesses. Adjacent transition regions have different transition steps. Thinner transition regions are relatively highly doped and are located where the optical standing wave within the DBR has a low field strength. Thicker transition regions are relatively lightly doped and are located where the optical standing wave has a relatively high field strength. Beneficially, in the AlxGa(1-x)As material system the stacked material layers are alternating layers of A1As and GaAs. Other material systems will use other alternating layers.
PCT/US2002/039825 2001-12-28 2002-12-13 Asymmetric distributed bragg reflector for vertical cavity surface emitting lasers WO2003058774A2 (en)

Priority Applications (5)

Application Number Priority Date Filing Date Title
KR1020047010027A KR100558320B1 (en) 2001-12-28 2002-12-13 Asymmetric Distributed Bragg Reflector For Vertical Cavity Surface Emitting Lasers
JP2003558979A JP4177262B2 (en) 2001-12-28 2002-12-13 Asymmetric distributed Bragg reflector for vertical cavity surface emitting lasers
AT02798511T ATE488039T1 (en) 2001-12-28 2002-12-13 ASYMMETRICALLY DISTRIBUTED BRAGG REFLECTOR FOR SURFACE EMITTING LASER WITH VERTICAL RESONATOR
EP02798511A EP1459417B1 (en) 2001-12-28 2002-12-13 Asymmetric distributed bragg reflector for vertical cavity surface emitting lasers
DE60238275T DE60238275D1 (en) 2001-12-28 2002-12-13 ASYMMETRICALLY DISTRIBUTED BRAGG REFLECTOR FOR SURFACE EMITTING LASER WITH VERTICAL RESONATOR

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/028,435 2001-12-28
US10/028,435 US6850548B2 (en) 2001-12-28 2001-12-28 Assymmetric distributed Bragg reflector for vertical cavity surface emitting lasers

Publications (2)

Publication Number Publication Date
WO2003058774A2 WO2003058774A2 (en) 2003-07-17
WO2003058774A3 true WO2003058774A3 (en) 2004-03-25

Family

ID=21843427

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/039825 WO2003058774A2 (en) 2001-12-28 2002-12-13 Asymmetric distributed bragg reflector for vertical cavity surface emitting lasers

Country Status (9)

Country Link
US (1) US6850548B2 (en)
EP (1) EP1459417B1 (en)
JP (1) JP4177262B2 (en)
KR (1) KR100558320B1 (en)
CN (1) CN1613170A (en)
AT (1) ATE488039T1 (en)
DE (1) DE60238275D1 (en)
TW (1) TWI237935B (en)
WO (1) WO2003058774A2 (en)

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US7245647B2 (en) * 1999-10-28 2007-07-17 Ricoh Company, Ltd. Surface-emission laser diode operable in the wavelength band of 1.1-1.7mum and optical telecommunication system using such a laser diode
US6975663B2 (en) * 2001-02-26 2005-12-13 Ricoh Company, Ltd. Surface-emission laser diode operable in the wavelength band of 1.1-7μm and optical telecommunication system using such a laser diode
US7590159B2 (en) * 2001-02-26 2009-09-15 Ricoh Company, Ltd. Surface-emission laser diode operable in the wavelength band of 1.1-1.7 micrometers and optical telecommunication system using such a laser diode
WO2002084829A1 (en) * 2001-04-11 2002-10-24 Cielo Communications, Inc. Long wavelength vertical cavity surface emitting laser
US7596165B2 (en) * 2004-08-31 2009-09-29 Finisar Corporation Distributed Bragg Reflector for optoelectronic device
US7920612B2 (en) * 2004-08-31 2011-04-05 Finisar Corporation Light emitting semiconductor device having an electrical confinement barrier near the active region
US7829912B2 (en) 2006-07-31 2010-11-09 Finisar Corporation Efficient carrier injection in a semiconductor device
US8815617B2 (en) * 2004-10-01 2014-08-26 Finisar Corporation Passivation of VCSEL sidewalls
US7860137B2 (en) 2004-10-01 2010-12-28 Finisar Corporation Vertical cavity surface emitting laser with undoped top mirror
CN101432936B (en) 2004-10-01 2011-02-02 菲尼萨公司 Vertical cavity surface emitting laser having multiple top-side contacts
US7826506B2 (en) 2004-10-01 2010-11-02 Finisar Corporation Vertical cavity surface emitting laser having multiple top-side contacts
KR100737609B1 (en) * 2005-09-29 2007-07-10 엘지전자 주식회사 Optical pumped semiconductor vertical external cavity surface emitting laser and fabricating method thereof
JP4300245B2 (en) * 2006-08-25 2009-07-22 キヤノン株式会社 Optical element equipped with multilayer reflector, surface emitting laser
US8527939B2 (en) * 2006-09-14 2013-09-03 Sap Ag GUI modeling of knowledge base in a modeling environment
US8031752B1 (en) 2007-04-16 2011-10-04 Finisar Corporation VCSEL optimized for high speed data
US8213474B2 (en) * 2007-12-21 2012-07-03 Finisar Corporation Asymmetric DBR pairs combined with periodic and modulation doping to maximize conduction and reflectivity, and minimize absorption
CN102611000B (en) * 2012-03-23 2013-09-25 中国科学院长春光学精密机械与物理研究所 High-efficiency vertical cavity surface emitting semiconductor laser with asymmetric optical field distribution
EP3497758A1 (en) * 2016-08-08 2019-06-19 Finisar Corporation Etched planarized vcsel
CN114899706A (en) * 2018-01-09 2022-08-12 苏州乐琻半导体有限公司 Surface emitting laser device and light emitting device including the same
SG11202005786SA (en) * 2018-01-18 2020-08-28 Iqe Plc Porous distributed bragg reflectors for laser applications
EP3540879A1 (en) * 2018-03-15 2019-09-18 Koninklijke Philips N.V. Vertical cavity surface emitting laser device with integrated tunnel junction

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Also Published As

Publication number Publication date
US20030123513A1 (en) 2003-07-03
WO2003058774A2 (en) 2003-07-17
DE60238275D1 (en) 2010-12-23
KR20040093676A (en) 2004-11-06
KR100558320B1 (en) 2006-03-10
JP2005514796A (en) 2005-05-19
TWI237935B (en) 2005-08-11
TW200301605A (en) 2003-07-01
EP1459417B1 (en) 2010-11-10
US6850548B2 (en) 2005-02-01
ATE488039T1 (en) 2010-11-15
CN1613170A (en) 2005-05-04
JP4177262B2 (en) 2008-11-05
EP1459417A2 (en) 2004-09-22

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