WO2003058775A2 - Wavelength division multiplexed vertical cavity surface emitting laser array - Google Patents
Wavelength division multiplexed vertical cavity surface emitting laser array Download PDFInfo
- Publication number
- WO2003058775A2 WO2003058775A2 PCT/US2002/041735 US0241735W WO03058775A2 WO 2003058775 A2 WO2003058775 A2 WO 2003058775A2 US 0241735 W US0241735 W US 0241735W WO 03058775 A2 WO03058775 A2 WO 03058775A2
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- WO
- WIPO (PCT)
- Prior art keywords
- spacer
- fabricating
- emitting laser
- surface emitting
- cavity surface
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/42—Arrays of surface emitting lasers
- H01S5/423—Arrays of surface emitting lasers having a vertical cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S2304/00—Special growth methods for semiconductor lasers
- H01S2304/02—MBE
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
- H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
- H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
- H01S5/18358—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] containing spacer layers to adjust the phase of the light wave in the cavity
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
- H01S5/4025—Array arrangements, e.g. constituted by discrete laser diodes or laser bar
- H01S5/4087—Array arrangements, e.g. constituted by discrete laser diodes or laser bar emitting more than one wavelength
Definitions
- the present invention relates generally to the field of vertical cavity surface emitting laser arrays. More specifically, it relates to vertical cavity surface emitting laser arrays that emit light at different wavelengths, and to a method of producing such arrays binary masks.
- VCSELs Vertical cavity surface emitting lasers
- optical emission occurs normal to the plane of a PN junction.
- VCSELs have certain advantages over edge-emitting laser diodes, including smaller optical beam divergence and well-defined, highly circular laser beams. Such advantages make VCSELs well suited for optical data storage, data and telecommunication systems, and laser scanning.
- VCSELs can be formed from a wide range of material systems to produce specific characteristics. VCSELs typically have active regions, distributed Bragg reflector (DBR) mirrors, current confinement structures, substrates, and contacts. Because of their complicated structure and because of their material requirements, VCSELs are usually grown using metal-organic chemical vapor deposition (MOCVD) or by using molecular beam epitaxy (MBE).
- MOCVD metal-organic chemical vapor deposition
- MBE molecular beam epitaxy
- Figure 1 illustrates a typical VCSEL 10. As shown, an n-doped gallium arsenide (GaAS) substrate 12 is disposed with an n-type electrical contact 14.
- GaAS gallium arsenide
- An n-doped lower mirror stack 16 (a DBR) is on the GaAS substrate 12, and an n-type graded-index lower spacer 18 is disposed over the lower mirror stack 16.
- An active region 20 having a plurality of quantum wells is formed over the lower spacer 18.
- a p-type graded-index top spacer 22 is disposed over the active region 20, and a p-type top mirror stack 24 (another DBR) is disposed over the top spacer 22.
- Over the top mirror stack 24 is a p-conduction layer 9, a p-type GaAs cap layer 8, and a p-type electrical contact 26.
- the lower spacer 18 and the top spacer 22 separate the lower mirror stack 16 from the top mirror stack 24 such that an optical cavity is formed.
- the mirror separation is controlled to resonant at a predetermined wavelength (or at a multiple thereof).
- At least part of the top mirror stack 24 includes an insulating region 40 that is formed by implanting protons into the top mirror stack 24 or by forming an oxide layer. In either event, the insulating region 40 has a conductive annular central opening 42 that forms an electrically conductive path though the insulating region 40.
- an external bias causes an electrical current 21 to flow from the p-type electrical contact 26 toward the n-type electrical contact 14.
- the insulating region 40 and its conductive central opening 42 confine the current 21 flow through the active region 20. Some of the electrons in the current 21 are converted into photons in the active region 20. Those photons bounce back and forth (resonate) between the lower mirror stack 16 and the top mirror stack 24. While the lower mirror stack 16 and the top mirror stack 24 are very good reflectors, some of the photons leak out as light 23 that travels along an optical path. Still referring to Figure 1, the light 23 passes through the p-type conduction layer 9, through the p-type GaAs cap layer 8, through an aperture 30 in the p-type electrical contact 26, and out of the surface of the vertical cavity surface emitting laser 10.
- Figure 1 illustrates a typical VCSEL, and that numerous variations are possible.
- the dopings can be changed (say, providing a p-type substrate), different material systems can be used, operational details can be varied, and additional structures, such as tunnel junctions, can be added.
- Figure 1 only illustrates one VCSEL.
- Producing multiple VCSELs on one substrate can be beneficial.
- a VCSEL array that is comprised of multiple individual VCSEL elements that emit light at different wavelengths.
- Such an array could be used to implement wavelength division multiplexed systems. That is, light of one wavelength could be emitted (and, if required, modulated), then light of another wavelength could be emitted (and, if required, modulated), and so on. Because of the inherent low cost and volume capability of VCSELs, a VCSEL array suitable for wavelength division multiplexing would be highly attractive.
- the wavelength of the light output depends on various factors, one of which (as previously noted) is the separation of the top DBR mirror and the bottom DBR mirror.
- the output wavelength can be tuned by controlling the length of the cavity between the top and bottom DBRs. That cavity length is set during the manufacturing process.
- Figure 2 which illustrates a side view of a simplified VCSEL element 98 of a VCSEL array, is useful for visualizing the cavity length.
- the VCSEL element 98 includes a substrate 100 having a backside contact 102 and a backside DBR mirror 104.
- An active region 106 is on the backside DBR mirror 104.
- a front side DBR 110 is on the active region 106.
- Front side electrical contacts 112 are on the front side DBR 110.
- the front side and back side DBR separation is controlled by the width of the active region 106 (and by the reflection depth of the DBRs). Therefore, the output wavelength is controlled by the processes that form the VCSEL element. [0012] Therefore, a process of producing a VCSEL array that emits light beams of different wavelengths would be beneficial. Even more beneficial would be a new VCSEL array that is suitable for wavelength division multiplexing. Still more beneficial would be a low cost lithographic technique of producing VCSEL arrays that emit light beams having different wavelengths.
- the principles of the present invention are directed to a method of producing VCSEL arrays, and to VCSEL arrays produced by that method, that are capable of emitting light beams having different wavelengths and that are suitable implementing wavelength division multiplexing in a cost effective manner.
- binary masks are used to control depositions and/or etchings of a spacer that is disposed between top DBR mirrors and an active region. By using the binary masks, the wavelengths of individual VCSEL elements on a common substrate can be controlled.
- a process-controlled spacer is selectively grown on an active region using a sequence of binary masks such that the spacer has multiple thicknesses that are controlled by the binary masks. Then, front side (top) DBR mirrors are disposed over the spacer. Electrical contacts for the individual VCSEL elements are then provided. Additionally, suitable isolation regions are formed, either in the spacer or in the front side DBR mirrors, such that discrete VCSEL elements are formed. Suitable spacers can be formed from regrowth AlxGaoxjAs (or similar materials), a dielectric deposition (such as PECVD SiO 2 ), or a glass deposition.
- a process-controlled spacer is formed over an active region. Then, that process-controlled spacer is selectively etched using a sequence of binary masks such that the spacer has multiple thicknesses in locations controlled by the binary masks. Beneficially, the spacer includes etch stop layers that accurately control the etch depth, and thus the spacer thicknesses. Then, front side DBR mirrors are disposed over the spacer and electrical contacts for the individual VCSEL elements are provided. Additionally, isolation regions are formed, either in the substrate or in the front side DBR mirrors, such that discrete VCSEL elements are produced.
- a VCSEL array according to the principles of the present invention includes a substrate, an active region adjacent the substrate, and a spacer having a plurality of regions with different thicknesses. Beneficially, the difference in thickness between each region is a multiple of a distance L. Front side DBR mirror structures are over the spacer, and electrical contacts for the individual VCSEL elements are over the front side DBR mirror structures.
- Figure 1 illustrates a typical vertical cavity surface emitting laser
- Figure 2 illustrates a side section view of a simplified VCSEL element
- Figure 3 illustrates a top view of a binary mask set according to the principles of the present invention
- Figure 4 illustrates a side view of a partially fabricated VCSEL array after depositions through the binary mask set illustrated in Figure 3;
- Figure 5 illustrates a side view of a VCSEL array according to the principles of the present invention
- Figure 6 illustrates a side view of a partially fabricated VCSEL array after a spacer is formed
- Figure 7 illustrates a side view of a partially fabricated VCSEL array after etching the spacer of Figure 6 through binary mask set illustrated in Figure 3;
- Figure 8 illustrates a top view of another binary mask set that is in accord with the principles of the present invention
- the principles of the present invention provide for VCSEL arrays, and for methods of fabricating such VCSEL arrays, that output light at multiple wavelengths. Such VCSEL arrays are particularly useful in wavelength division multiplexed applications.
- Binary masks have open and closed regions that can conceptually correspond to binary digits (0s and Is).
- Figure 3 illustrates one set 200 of binary masks, with that set being comprised of a first mask 202 and of a second mask 204. Each mask is comprised of open areas 206 (which can correspond to binary 0) and closed areas 208 (which can corresponds to binary 1).
- a first use of the mask set 200 is in producing a special spacer using material depositions.
- Figure 4 for a partially fabricated VCSEL structure
- That VCSEL structure is produced by forming an active region 302 on a lower DBR 304, which is on a substrate 306 having a metallic contact 307. Over the active region is an optional top buffer layer 308. If used, the top buffer layer 308 controls the minimum separation between the lower DBR 304 and upper DBRs that will be formed.
- the first mask 202 is placed over the partially fabricated VCSEL structure 300 active region 302 (or over the top buffer layer 308).
- Spacer material 310 having a thickness 2L is then grown (deposited) through the open areas 206 of the first mask.
- the first mask 202 is removed and the second mask 204 is placed over the partially fabricated VCSEL structure 300.
- Spacer material 312 having a thickness L is then grown through the open areas 206 of the second mask.
- the second mask 204 is removed.
- Top DBRs 316 are then grown on the deposited spacer layers (isolation regions, which are not shown in Figure 3, are fabricated as required) such that discrete VCSEL elements are produced.
- the result is four DBRs 316 that are spaced apart from each other, with the thickness of each spacer element being an integer multiple of L.
- suitable spacer materials include regrowth Al ⁇ Ga(i. ⁇ ) As (or similar materials), a dielectric deposition (such as PECVD SiO 2 ), or a glass deposition. If the deposited spacer material(s) is properly selected, the spacer can be relatively stress-free. Stress can further be reduced by annealing the structure 300 after each deposition to smooth out interface roughness. Additionally, while the foregoing is described as producing DBR separations that are multiples of L, this is not required. The thickness of the various depositions can be varied to achieve design goals.
- electrical contacts 510 are then formed on the DBRs 316.
- the result is a VCSEL array 500 that emits light at different wavelengths from the individual VCSEL elements.
- FIG. 6 Another use of the mask set 200 shown in Figure 3 is in producing a special spacer by etching.
- Figure 6 for a partially fabricated VCSEL structure 400. That VCSEL structure is produced by forming an active region 302 on a lower DBR 304, which is on a substrate 306 having a contact 307. Over the active region is an optional top buffer layer 308. If used, the top buffer layer 308 controls the minimum separation between the lower DBR 304 and upper DBRs that will be formed later. Over the active region is a material 402. That material can be a dielectric deposition or a semiconductor growth. Additionally, to assist accurate etching, etch stop layers 412 can be located within the material 402.
- the first mask 202 is located over the material 402.
- the material 402 is then etched a distance 2L through the open areas 206 of the first mask.
- An etch stop layer 412 can be used to stop the etch at the proper location.
- the first mask 202 is removed and the second mask 204 is located over the partially fabricated VCSEL structure.
- the material 402 is then etched a distance L through the open areas 206 of the second mask. Again, an etch stop layer can assist accurate etch depth.
- the second mask 204 is removed.
- Top DBRs 316 are then grown on the etched spacer layers.
- the result is four DBRs 316 that are spaced apart from each other, with the separation between each of the DBRs 316 being an integer multiple of L. Electrical contacts (which are not shown, but reference the contacts 550 in Figure 5) for the individual VCSEL elements are then provided. Isolation regions are also formed in suitable locations. [0038] Referring now to Figures 6 and 7, the etch process is best performed using an etchant that depends on the material 402. Isotropic planar etching is beneficial. Furthermore, the material 402 can include embedded etch stop layers 412 to enable accurate control of each step's position.
- Wavelength tuned VCSEL arrays produced using binary masks have the advantages of being able to produce a wide range of spacer thicknesses using lithographic techniques and relatively few masks and process steps. Furthermore, VCSEL arrays according to the present invention are relatively easily fabricated using normal fabrication processes. Also, standard processes can be used to fabricated features of the VCSEL array, such as trenches for oxidation and material growths. [0040] The foregoing has described using a binary mask set that is comprised of two individual masks (reference Figure 3). However, the principles of the present invention encompass that use of other mask sets. For example, Figure 8 illustrates a mask set 600 that is comprised of four individual masks, the masks 602, 604, 606, and 608. Those masks still include open areas 206 and closed areas 208. Such a mask set with 4 individual masks can produce up to 16 thickness variations. The number of thickness variations is related to a power of 2.
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02796120A EP1461851A2 (en) | 2001-12-28 | 2002-12-13 | Multiple wavelength vertical cavity surface emitting laser array |
CA002472061A CA2472061A1 (en) | 2001-12-28 | 2002-12-13 | Wavelength division multiplexed vertical cavity surface emitting laser array |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/028,438 | 2001-12-28 | ||
US10/028,438 US6693934B2 (en) | 2001-12-28 | 2001-12-28 | Wavelength division multiplexed vertical cavity surface emitting laser array |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003058775A2 true WO2003058775A2 (en) | 2003-07-17 |
WO2003058775A3 WO2003058775A3 (en) | 2004-03-18 |
Family
ID=21843445
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/041735 WO2003058775A2 (en) | 2001-12-28 | 2002-12-13 | Wavelength division multiplexed vertical cavity surface emitting laser array |
Country Status (4)
Country | Link |
---|---|
US (1) | US6693934B2 (en) |
EP (1) | EP1461851A2 (en) |
CA (1) | CA2472061A1 (en) |
WO (1) | WO2003058775A2 (en) |
Families Citing this family (11)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6970488B2 (en) * | 2002-10-16 | 2005-11-29 | Eastman Kodak Company | Tunable organic VCSEL system |
US7283242B2 (en) * | 2003-04-11 | 2007-10-16 | Thornton Robert L | Optical spectroscopy apparatus and method for measurement of analyte concentrations or other such species in a specimen employing a semiconductor laser-pumped, small-cavity fiber laser |
US7633621B2 (en) * | 2003-04-11 | 2009-12-15 | Thornton Robert L | Method for measurement of analyte concentrations and semiconductor laser-pumped, small-cavity fiber lasers for such measurements and other applications |
US7115955B2 (en) * | 2004-07-30 | 2006-10-03 | International Business Machines Corporation | Semiconductor device having a strained raised source/drain |
US20060045158A1 (en) * | 2004-08-30 | 2006-03-02 | Chian Chiu Li | Stack-type Wavelength-tunable Laser Source |
US20070041416A1 (en) * | 2005-08-19 | 2007-02-22 | Koelle Bernhard U | Tunable long-wavelength VCSEL system |
KR100734565B1 (en) | 2005-08-19 | 2007-07-03 | 광주과학기술원 | Method for manufacturing of resonant cavity enhanecd photo-detector |
US7321117B2 (en) * | 2005-09-22 | 2008-01-22 | Honeywell International Inc. | Optical particulate sensor in oil quality detection |
WO2012047232A1 (en) | 2010-10-08 | 2012-04-12 | Hewlett-Packard Development Company, L.P. | Optical multiplexing using laser arrays |
WO2012047230A1 (en) | 2010-10-08 | 2012-04-12 | Hewlett-Packard Development Company, L.P. | Optical polarization multiplexing using laser arrays |
US10868407B2 (en) * | 2015-06-04 | 2020-12-15 | Hewlett Packard Enterprise Development Lp | Monolithic WDM VCSELS with spatially varying gain peak and fabry perot wavelength |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0865123A2 (en) * | 1997-03-10 | 1998-09-16 | Motorola, Inc. | Dual wavelength monolithically integrated vertical cavity surface emitting lasers and method of fabrication |
EP0949728A1 (en) * | 1998-04-10 | 1999-10-13 | Hewlett-Packard Company | A monolithic multiple wavelenght VCSEL array |
Family Cites Families (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5388120A (en) * | 1993-09-21 | 1995-02-07 | Motorola, Inc. | VCSEL with unstable resonator |
US5699375A (en) * | 1996-07-08 | 1997-12-16 | Xerox Corporation | Multiple wavelength, surface emitting laser with broad bandwidth distributed Bragg reflectors |
US6195485B1 (en) | 1998-10-26 | 2001-02-27 | The Regents Of The University Of California | Direct-coupled multimode WDM optical data links with monolithically-integrated multiple-channel VCSEL and photodetector |
US6611543B2 (en) * | 2000-12-23 | 2003-08-26 | Applied Optoelectronics, Inc. | Vertical-cavity surface-emitting laser with metal mirror and method of fabrication of same |
US6362069B1 (en) * | 2000-12-28 | 2002-03-26 | The Trustees Of Princeton University | Long-wavelength VCSELs and method of manufacturing same |
US6836501B2 (en) * | 2000-12-29 | 2004-12-28 | Finisar Corporation | Resonant reflector for increased wavelength and polarization control |
US6553053B2 (en) * | 2001-07-25 | 2003-04-22 | Luxnet Corporation | Vertical cavity surface emitting laser having improved light output function |
US20030034508A1 (en) * | 2001-08-16 | 2003-02-20 | Motorola, Inc. | Microprocessor in MOS with integrated cordic in compound semiconductor on a common substrate |
-
2001
- 2001-12-28 US US10/028,438 patent/US6693934B2/en not_active Expired - Fee Related
-
2002
- 2002-12-13 EP EP02796120A patent/EP1461851A2/en not_active Withdrawn
- 2002-12-13 WO PCT/US2002/041735 patent/WO2003058775A2/en not_active Application Discontinuation
- 2002-12-13 CA CA002472061A patent/CA2472061A1/en not_active Abandoned
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
EP0865123A2 (en) * | 1997-03-10 | 1998-09-16 | Motorola, Inc. | Dual wavelength monolithically integrated vertical cavity surface emitting lasers and method of fabrication |
EP0949728A1 (en) * | 1998-04-10 | 1999-10-13 | Hewlett-Packard Company | A monolithic multiple wavelenght VCSEL array |
Non-Patent Citations (2)
Title |
---|
HIDEAKI SAITO ET AL: "MONOLITHIC INTEGRATION OF MULTIPLE WAVELENGHT MERTICAL-CAVITY SURFACE-EMITTING LASERS BY MASK MOLECULAR BEAM EPITAXY" APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 66, no. 19, 8 May 1995 (1995-05-08), pages 2466-2468, XP000507763 ISSN: 0003-6951 * |
SAITO H ET AL: "UNIFORM CW OPERATION OF MULTIPLE-WAVELENGTH VERTICAL-CAVITY SURFACE-EMITTING LASERS FABRICATED BY MASK MOLECULAR BEAM EPITAXY" IEEE PHOTONICS TECHNOLOGY LETTERS, IEEE INC. NEW YORK, US, vol. 8, no. 9, 1 September 1996 (1996-09-01), pages 1118-1120, XP000624849 ISSN: 1041-1135 * |
Also Published As
Publication number | Publication date |
---|---|
CA2472061A1 (en) | 2003-07-17 |
US20030123507A1 (en) | 2003-07-03 |
EP1461851A2 (en) | 2004-09-29 |
WO2003058775A3 (en) | 2004-03-18 |
US6693934B2 (en) | 2004-02-17 |
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