WO2003061087A3 - Temperature-stabilised semiconductor laser - Google Patents

Temperature-stabilised semiconductor laser Download PDF

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Publication number
WO2003061087A3
WO2003061087A3 PCT/DE2003/000155 DE0300155W WO03061087A3 WO 2003061087 A3 WO2003061087 A3 WO 2003061087A3 DE 0300155 W DE0300155 W DE 0300155W WO 03061087 A3 WO03061087 A3 WO 03061087A3
Authority
WO
WIPO (PCT)
Prior art keywords
semiconductor laser
amplification curve
laser
dgmat
gmat
Prior art date
Application number
PCT/DE2003/000155
Other languages
German (de)
French (fr)
Other versions
WO2003061087A2 (en
Inventor
Johann Peter Reithmaier
Frank Klopf
Original Assignee
Univ Wuerzburg J Maximilians
Johann Peter Reithmaier
Frank Klopf
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ Wuerzburg J Maximilians, Johann Peter Reithmaier, Frank Klopf filed Critical Univ Wuerzburg J Maximilians
Publication of WO2003061087A2 publication Critical patent/WO2003061087A2/en
Publication of WO2003061087A3 publication Critical patent/WO2003061087A3/en

Links

Classifications

    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y20/00—Nanooptics, e.g. quantum optics or photonic crystals
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/068—Stabilisation of laser output parameters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/04—Gain spectral shaping, flattening
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/12—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region the resonator having a periodic structure, e.g. in distributed feedback [DFB] lasers
    • H01S5/125—Distributed Bragg reflector [DBR] lasers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/30—Structure or shape of the active region; Materials used for the active region
    • H01S5/34—Structure or shape of the active region; Materials used for the active region comprising quantum well or superlattice structures, e.g. single quantum well [SQW] lasers, multiple quantum well [MQW] lasers or graded index separate confinement heterostructure [GRINSCH] lasers
    • H01S5/341—Structures having reduced dimensionality, e.g. quantum wires
    • H01S5/3412—Structures having reduced dimensionality, e.g. quantum wires quantum box or quantum dash

Abstract

The invention relates to a semiconductor laser, which exhibits a flat amplification curve (41) in an energy range around the emission wavelength. When the gradient dgmat/dE (42) of the amplification curve gmat(E) (41) is small (one to two orders of magnitude smaller than in conventional semiconductor materials), the semiconductor laser exhibits a particularly low temperature drift dμ/dT (43). A flat amplification curve (41) of this type can be achieved by a quantum dot laser (42) with two energy levels, which are separated by a favourable energy band gap and have a favourable amplification ratio in relation to one another. By guiding the process appropriately during the formation of the quantum dot layer, the individual energy levels are spread in such a way that a total amplification curve gmat(E) (41) with a small gradient dgmat/dE (42) is obtained. A temperature-stabilised semiconductor laser of this type can also be achieved by a quantum wire laser.
PCT/DE2003/000155 2002-01-18 2003-01-20 Temperature-stabilised semiconductor laser WO2003061087A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10202074.4 2002-01-18
DE10202074A DE10202074A1 (en) 2002-01-18 2002-01-18 Temperature-stable semiconductor lasers

Publications (2)

Publication Number Publication Date
WO2003061087A2 WO2003061087A2 (en) 2003-07-24
WO2003061087A3 true WO2003061087A3 (en) 2004-04-15

Family

ID=7712633

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/000155 WO2003061087A2 (en) 2002-01-18 2003-01-20 Temperature-stabilised semiconductor laser

Country Status (2)

Country Link
DE (1) DE10202074A1 (en)
WO (1) WO2003061087A2 (en)

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5260957A (en) * 1992-10-29 1993-11-09 The Charles Stark Draper Laboratory, Inc. Quantum dot Laser
US5274655A (en) * 1992-03-26 1993-12-28 Motorola, Inc. Temperature insensitive vertical cavity surface emitting laser
US5712865A (en) * 1995-09-28 1998-01-27 Sandia Corporation Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5274655A (en) * 1992-03-26 1993-12-28 Motorola, Inc. Temperature insensitive vertical cavity surface emitting laser
US5260957A (en) * 1992-10-29 1993-11-09 The Charles Stark Draper Laboratory, Inc. Quantum dot Laser
US5712865A (en) * 1995-09-28 1998-01-27 Sandia Corporation Temperature-insensitive vertical-cavity surface-emitting lasers and method for fabrication thereof

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
KAJITA M ET AL: "Temperature-insensitive vertical-cavity surface-emitting laser array with a broad gain bandwidth", ELECTRONICS LETTERS, IEE STEVENAGE, GB, vol. 31, no. 22, 26 October 1995 (1995-10-26), pages 1925 - 1927, XP006003589, ISSN: 0013-5194 *
KLOPF F ET AL: "CORRELATION BETWEEN THE GAIN PROFILE AND THE TEMPERATURE-INDUCED SHIFT IN WAVELENGTH OF QUANTUM-DOT LASERS", APPLIED PHYSICS LETTERS, AMERICAN INSTITUTE OF PHYSICS. NEW YORK, US, vol. 81, no. 2, 8 July 2002 (2002-07-08), pages 217 - 219, XP001129311, ISSN: 0003-6951 *

Also Published As

Publication number Publication date
DE10202074A1 (en) 2003-08-07
WO2003061087A2 (en) 2003-07-24

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