WO2003069630A3 - Cellule memoire a programmation unique non destructrice - Google Patents
Cellule memoire a programmation unique non destructrice Download PDFInfo
- Publication number
- WO2003069630A3 WO2003069630A3 PCT/FR2003/000446 FR0300446W WO03069630A3 WO 2003069630 A3 WO2003069630 A3 WO 2003069630A3 FR 0300446 W FR0300446 W FR 0300446W WO 03069630 A3 WO03069630 A3 WO 03069630A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- memory cell
- programming
- destructive
- time programming
- polycrystalline silicon
- Prior art date
Links
Classifications
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C17/00—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards
- G11C17/14—Read-only memories programmable only once; Semi-permanent stores, e.g. manually-replaceable information cards in which contents are determined by selectively establishing, breaking or modifying connecting links by permanently altering the state of coupling elements, e.g. PROM
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/06—Auxiliary circuits, e.g. for writing into memory
- G11C16/22—Safety or protection circuits preventing unauthorised or accidental access to memory cells
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03739527A EP1476878B1 (fr) | 2002-02-11 | 2003-02-11 | Cellule memoire a programmation unique non destructrice |
AU2003226879A AU2003226879A1 (en) | 2002-02-11 | 2003-02-11 | Memory cell with non-destructive one-time programming |
DE60332426T DE60332426D1 (de) | 2002-02-11 | 2003-02-11 | Zerstörungsfreie einmal programmierbare speicherzelle |
US10/504,273 US7110277B2 (en) | 2002-02-11 | 2003-02-11 | Memory cell with non-destructive one-time programming |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR02/01637 | 2002-02-11 | ||
FR0201637A FR2836750A1 (fr) | 2002-02-11 | 2002-02-11 | Cellule memoire a programmation unique non destructrice |
FR0213555A FR2836751A1 (fr) | 2002-02-11 | 2002-10-29 | Cellule memoire a programmation unique non destructrice |
FR02/13555 | 2002-10-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003069630A2 WO2003069630A2 (fr) | 2003-08-21 |
WO2003069630A3 true WO2003069630A3 (fr) | 2004-05-06 |
Family
ID=27736156
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/FR2003/000446 WO2003069630A2 (fr) | 2002-02-11 | 2003-02-11 | Cellule memoire a programmation unique non destructrice |
Country Status (6)
Country | Link |
---|---|
US (1) | US7110277B2 (fr) |
EP (1) | EP1476878B1 (fr) |
AU (1) | AU2003226879A1 (fr) |
DE (1) | DE60332426D1 (fr) |
FR (1) | FR2836751A1 (fr) |
WO (1) | WO2003069630A2 (fr) |
Families Citing this family (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2846776A1 (fr) * | 2002-10-30 | 2004-05-07 | St Microelectronics Sa | Cellule memoire a trois etats |
US7236418B2 (en) * | 2004-06-25 | 2007-06-26 | Qualcomm Incorporated | Reduced area, reduced programming voltage CMOS eFUSE-based scannable non-volatile memory bitcell |
DE102005019587B4 (de) * | 2005-04-27 | 2007-05-10 | Infineon Technologies Ag | Fuse-Speicherzelle mit verbessertem Schutz gegen unberechtigten Zugriff |
US20080062738A1 (en) * | 2006-09-08 | 2008-03-13 | Florian Schamberger | Storage element and method for operating a storage element |
US20090003083A1 (en) * | 2007-06-28 | 2009-01-01 | Sandisk 3D Llc | Memory cell with voltage modulated sidewall poly resistor |
US8050129B2 (en) * | 2009-06-25 | 2011-11-01 | Mediatek Inc. | E-fuse apparatus for controlling reference voltage required for programming/reading e-fuse macro in an integrated circuit via switch device in the same integrated circuit |
TWI469149B (zh) * | 2010-04-09 | 2015-01-11 | Realtek Semiconductor Corp | 電子熔絲系統 |
CN103730161B (zh) * | 2013-12-23 | 2017-06-06 | 深圳国微技术有限公司 | 一种安全芯片抗攻击的安全电路及采用该安全电路的安全芯片 |
US9613714B1 (en) * | 2016-01-19 | 2017-04-04 | Ememory Technology Inc. | One time programming memory cell and memory array for physically unclonable function technology and associated random code generating method |
Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4146902A (en) * | 1975-12-03 | 1979-03-27 | Nippon Telegraph And Telephone Public Corp. | Irreversible semiconductor switching element and semiconductor memory device utilizing the same |
JPS5498536A (en) * | 1978-01-23 | 1979-08-03 | Nippon Telegr & Teleph Corp <Ntt> | Memory unit of polycrystal silicon resistor |
GB2084828A (en) * | 1980-09-25 | 1982-04-15 | Tokyo Shibaura Electric Co | Semiconductor ic memory |
US4342102A (en) * | 1980-06-18 | 1982-07-27 | Signetics Corporation | Semiconductor memory array |
US4399372A (en) * | 1979-12-14 | 1983-08-16 | Nippon Telegraph And Telephone Public Corporation | Integrated circuit having spare parts activated by a high-to-low adjustable resistance device |
FR2523357A1 (fr) * | 1982-03-15 | 1983-09-16 | Thomson Csf | Matrice d'elements a memoire integres, a double couche de silicium polycristallin de haute resistivite et procede de fabrication |
US4449203A (en) * | 1981-02-25 | 1984-05-15 | Motorola, Inc. | Memory with reference voltage generator |
US4476478A (en) * | 1980-04-24 | 1984-10-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor read only memory and method of making the same |
US4590589A (en) * | 1982-12-21 | 1986-05-20 | Zoran Corporation | Electrically programmable read only memory |
EP0511560A2 (fr) * | 1991-04-30 | 1992-11-04 | International Business Machines Corporation | Elément de mémoire programmable à basse tension |
US5504760A (en) * | 1991-03-15 | 1996-04-02 | Sandisk Corporation | Mixed data encoding EEPROM system |
EP0753859A1 (fr) * | 1995-07-14 | 1997-01-15 | STMicroelectronics S.r.l. | Procédé pour le réglage de la tension de seuil d'une cellule de mémoire de référence |
US5689455A (en) * | 1995-08-31 | 1997-11-18 | Micron Technology, Inc. | Circuit for programming antifuse bits |
US5761118A (en) * | 1995-12-19 | 1998-06-02 | Samsung Electronics Co., Ltd. | Programming apparatus for analog storage media |
US5926409A (en) * | 1997-09-05 | 1999-07-20 | Information Storage Devices, Inc. | Method and apparatus for an adaptive ramp amplitude controller in nonvolatile memory application |
US5936880A (en) * | 1997-11-13 | 1999-08-10 | Vlsi Technology, Inc. | Bi-layer programmable resistor memory |
US6198678B1 (en) * | 1998-06-23 | 2001-03-06 | Mitel Semiconductor Limited | Semiconductor memories |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3761896A (en) * | 1972-04-18 | 1973-09-25 | Ibm | Memory array of cells containing bistable switchable resistors |
US3863231A (en) | 1973-07-23 | 1975-01-28 | Nat Res Dev | Read only memory with annular fuse links |
US4132904A (en) | 1977-07-28 | 1979-01-02 | Hughes Aircraft Company | Volatile/non-volatile logic latch circuit |
US4175290A (en) | 1977-07-28 | 1979-11-20 | Hughes Aircraft Company | Integrated semiconductor memory array having improved logic latch circuitry |
US4404581A (en) | 1980-12-15 | 1983-09-13 | Rockwell International Corporation | ROM With redundant ROM cells employing a highly resistive polysilicon film for programming the cells |
US5440505A (en) * | 1994-01-21 | 1995-08-08 | Intel Corporation | Method and circuitry for storing discrete amounts of charge in a single memory element |
FR2715782B1 (fr) | 1994-01-31 | 1996-03-22 | Sgs Thomson Microelectronics | Bascule bistable non volatile programmable, à état initial prédéfini, notamment pour circuit de redondance de mémoire. |
US5863231A (en) * | 1997-05-19 | 1999-01-26 | Strong; Jeffrey W. | Underwater exhaust system for marine engine |
US6191989B1 (en) | 2000-03-07 | 2001-02-20 | International Business Machines Corporation | Current sensing amplifier |
US6960819B2 (en) * | 2000-12-20 | 2005-11-01 | Broadcom Corporation | System and method for one-time programmed memory through direct-tunneling oxide breakdown |
DE60329781D1 (de) * | 2002-12-12 | 2009-12-03 | Nxp Bv | Einmal programmierbare speicheranordnung |
US7002829B2 (en) * | 2003-09-30 | 2006-02-21 | Agere Systems Inc. | Apparatus and method for programming a one-time programmable memory device |
-
2002
- 2002-10-29 FR FR0213555A patent/FR2836751A1/fr active Pending
-
2003
- 2003-02-11 US US10/504,273 patent/US7110277B2/en not_active Expired - Lifetime
- 2003-02-11 AU AU2003226879A patent/AU2003226879A1/en not_active Abandoned
- 2003-02-11 WO PCT/FR2003/000446 patent/WO2003069630A2/fr not_active Application Discontinuation
- 2003-02-11 EP EP03739527A patent/EP1476878B1/fr not_active Expired - Lifetime
- 2003-02-11 DE DE60332426T patent/DE60332426D1/de not_active Expired - Lifetime
Patent Citations (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4146902A (en) * | 1975-12-03 | 1979-03-27 | Nippon Telegraph And Telephone Public Corp. | Irreversible semiconductor switching element and semiconductor memory device utilizing the same |
JPS5498536A (en) * | 1978-01-23 | 1979-08-03 | Nippon Telegr & Teleph Corp <Ntt> | Memory unit of polycrystal silicon resistor |
US4399372A (en) * | 1979-12-14 | 1983-08-16 | Nippon Telegraph And Telephone Public Corporation | Integrated circuit having spare parts activated by a high-to-low adjustable resistance device |
US4476478A (en) * | 1980-04-24 | 1984-10-09 | Tokyo Shibaura Denki Kabushiki Kaisha | Semiconductor read only memory and method of making the same |
US4342102A (en) * | 1980-06-18 | 1982-07-27 | Signetics Corporation | Semiconductor memory array |
GB2084828A (en) * | 1980-09-25 | 1982-04-15 | Tokyo Shibaura Electric Co | Semiconductor ic memory |
US4449203A (en) * | 1981-02-25 | 1984-05-15 | Motorola, Inc. | Memory with reference voltage generator |
FR2523357A1 (fr) * | 1982-03-15 | 1983-09-16 | Thomson Csf | Matrice d'elements a memoire integres, a double couche de silicium polycristallin de haute resistivite et procede de fabrication |
US4590589A (en) * | 1982-12-21 | 1986-05-20 | Zoran Corporation | Electrically programmable read only memory |
US5504760A (en) * | 1991-03-15 | 1996-04-02 | Sandisk Corporation | Mixed data encoding EEPROM system |
EP0511560A2 (fr) * | 1991-04-30 | 1992-11-04 | International Business Machines Corporation | Elément de mémoire programmable à basse tension |
EP0753859A1 (fr) * | 1995-07-14 | 1997-01-15 | STMicroelectronics S.r.l. | Procédé pour le réglage de la tension de seuil d'une cellule de mémoire de référence |
US5689455A (en) * | 1995-08-31 | 1997-11-18 | Micron Technology, Inc. | Circuit for programming antifuse bits |
US5761118A (en) * | 1995-12-19 | 1998-06-02 | Samsung Electronics Co., Ltd. | Programming apparatus for analog storage media |
US5926409A (en) * | 1997-09-05 | 1999-07-20 | Information Storage Devices, Inc. | Method and apparatus for an adaptive ramp amplitude controller in nonvolatile memory application |
US5936880A (en) * | 1997-11-13 | 1999-08-10 | Vlsi Technology, Inc. | Bi-layer programmable resistor memory |
US6198678B1 (en) * | 1998-06-23 | 2001-03-06 | Mitel Semiconductor Limited | Semiconductor memories |
Non-Patent Citations (1)
Title |
---|
PATENT ABSTRACTS OF JAPAN vol. 003, no. 121 (E - 143) 11 October 1979 (1979-10-11) * |
Also Published As
Publication number | Publication date |
---|---|
DE60332426D1 (de) | 2010-06-17 |
AU2003226879A1 (en) | 2003-09-04 |
US7110277B2 (en) | 2006-09-19 |
US20050122759A1 (en) | 2005-06-09 |
EP1476878B1 (fr) | 2010-05-05 |
FR2836751A1 (fr) | 2003-09-05 |
WO2003069630A2 (fr) | 2003-08-21 |
EP1476878A2 (fr) | 2004-11-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
DE60319654D1 (de) | Nichtflüchtiger variabler Widerstand, Speicherelement, und Skalierungsverfahren für einen nichtflüchtigen variablen Widerstand | |
WO2004030033A3 (fr) | Procede de fonctionnement d'un element de resistance programmable | |
AU2003272596A1 (en) | Non-volatile memory and its sensing method | |
DE50308988D1 (de) | Nichtflüchtiges speicherelement sowie zugehörige herstellungsverfahren und speicherelementanordnungen | |
AU2003277017A1 (en) | Non-volatile memory device and method for forming | |
AU2003243002A1 (en) | Organic semiconductor element, production method therefor and organic semiconductor device | |
EP1554732B8 (fr) | Memoire non volatile hautement compacte et procede associe | |
EP1542362A4 (fr) | Oscillateur piezo-electrique a couche mince, dispositif piezo-electrique a couche mince, et procede de fabrication correspondant | |
AU2001280941A1 (en) | Non-volatile memory, method of manufacture and programming | |
TWI317987B (en) | Field- effect transistors with spin- dependent output characteristics and their nonvolatile memory applications | |
AU2003211888A1 (en) | Semiconductor device and its manufacturing method | |
AU2003235902A1 (en) | Semiconductor substrate manufacturing method and semiconductor device manufacturing method, and semiconductor substrate and semiconductor device manufactured by the methods | |
WO2003069630A3 (fr) | Cellule memoire a programmation unique non destructrice | |
EP1628351A4 (fr) | Materiau piezo-electrique, son procede de fabrication, et element piezo-electrique non lineaire | |
SG116654A1 (en) | Semiconductor device including semiconductor memory element and method for producing same. | |
AU2003244275A1 (en) | Semiconductor device and its manufacturing method | |
AU2003221422A1 (en) | Diffraction optical element and method for manufacturing the same, and optical device | |
DE60109887D1 (de) | Einmalig programmierbare nichtflüchtige halbleiterspeicheranordnung und verfahren zu deren herstellung | |
MXPA03001223A (es) | Celda de memoria, dispositivo de celda de memoria y metodo de fabricaccion del mismo. | |
AU2003300007A1 (en) | Programmable memory array structure incorporating series-connected transistor strings and methods for fabrication and operation of same | |
WO2005117102A3 (fr) | Cellule memoire eeprom de polysilicium a simple couche et basse tension | |
TWI347349B (en) | Organometal complex, electroluminescence material using the complex and electroluminescence element using the complex | |
DE60310870D1 (de) | Mit inselförmigen Beschichtungen vesehenes Teil, zugehöriges Herstellungsverfahren und dieses enthaltende Vorrichtung | |
AU2003236254A1 (en) | Semiconductor device and its manufacturing method | |
AU2003273314A1 (en) | Fluoroelastomers with improved permeation resistance and method for making the same |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SC SD SE SG SK SL TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2003739527 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2003739527 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10504273 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: JP |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: JP |