WO2003071549A1 - Programmable conductor random access memory and method for sensing same - Google Patents
Programmable conductor random access memory and method for sensing same Download PDFInfo
- Publication number
- WO2003071549A1 WO2003071549A1 PCT/US2003/003674 US0303674W WO03071549A1 WO 2003071549 A1 WO2003071549 A1 WO 2003071549A1 US 0303674 W US0303674 W US 0303674W WO 03071549 A1 WO03071549 A1 WO 03071549A1
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- WIPO (PCT)
- Prior art keywords
- voltage
- hne
- memory
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0011—RRAM elements whose operation depends upon chemical change comprising conductive bridging RAM [CBRAM] or programming metallization cells [PMCs]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/06—Sense amplifiers; Associated circuits, e.g. timing or triggering circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0004—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements comprising amorphous/crystalline phase transition cells
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0042—Read using differential sensing, e.g. bit line [BL] and bit line bar [BLB]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/004—Reading or sensing circuits or methods
- G11C2013/0054—Read is performed on a reference element, e.g. cell, and the reference sensed value is used to compare the sensed value of the selected cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0069—Writing or programming circuits or methods
- G11C2013/009—Write using potential difference applied between cell electrodes
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
Landscapes
- Read Only Memory (AREA)
- Semiconductor Memories (AREA)
- Dram (AREA)
- Techniques For Improving Reliability Of Storages (AREA)
- Programmable Controllers (AREA)
Abstract
Description
Claims
Priority Applications (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003570359A JP4619004B2 (en) | 2002-02-19 | 2003-02-10 | Programmable conductive random access memory and detection method thereof |
KR1020047012895A KR100626508B1 (en) | 2002-02-19 | 2003-02-10 | Programmable conductor random access memory and method for sensing same |
AU2003210901A AU2003210901A1 (en) | 2002-02-19 | 2003-02-10 | Programmable conductor random access memory and method for sensing same |
DE60321138T DE60321138D1 (en) | 2002-02-19 | 2003-02-10 | DIRECT ACCESS MEMORY WITH PROGRAMMABLE LADDERS AND METHOD FOR READING IT |
EP03742713A EP1476877B1 (en) | 2002-02-19 | 2003-02-10 | Programmable conductor random access memory and method for sensing same |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/076,486 US6791885B2 (en) | 2002-02-19 | 2002-02-19 | Programmable conductor random access memory and method for sensing same |
US10/076,486 | 2002-02-19 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003071549A1 true WO2003071549A1 (en) | 2003-08-28 |
Family
ID=27732505
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/003674 WO2003071549A1 (en) | 2002-02-19 | 2003-02-10 | Programmable conductor random access memory and method for sensing same |
Country Status (10)
Country | Link |
---|---|
US (2) | US6791885B2 (en) |
EP (1) | EP1476877B1 (en) |
JP (1) | JP4619004B2 (en) |
KR (1) | KR100626508B1 (en) |
CN (2) | CN100483545C (en) |
AT (1) | ATE396482T1 (en) |
AU (1) | AU2003210901A1 (en) |
DE (1) | DE60321138D1 (en) |
TW (1) | TW587250B (en) |
WO (1) | WO2003071549A1 (en) |
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DE102005001253A1 (en) * | 2005-01-11 | 2006-07-20 | Infineon Technologies Ag | Memory cell arrangement for solid electrolyte memory cells has lower electrode and upper electrode and activated solid electrolyte material area between them as memory material area and whole of material area is coherently designed |
US7719873B2 (en) | 2004-11-04 | 2010-05-18 | Sony Corporation | Memory and semiconductor device with memory state detection |
KR101263017B1 (en) | 2004-10-13 | 2013-05-09 | 소니 주식회사 | Storage device and semiconductor device |
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US7719873B2 (en) | 2004-11-04 | 2010-05-18 | Sony Corporation | Memory and semiconductor device with memory state detection |
DE102005001253A1 (en) * | 2005-01-11 | 2006-07-20 | Infineon Technologies Ag | Memory cell arrangement for solid electrolyte memory cells has lower electrode and upper electrode and activated solid electrolyte material area between them as memory material area and whole of material area is coherently designed |
Also Published As
Publication number | Publication date |
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US20030156463A1 (en) | 2003-08-21 |
TW587250B (en) | 2004-05-11 |
US6954385B2 (en) | 2005-10-11 |
KR20040096587A (en) | 2004-11-16 |
CN101261880A (en) | 2008-09-10 |
DE60321138D1 (en) | 2008-07-03 |
EP1476877B1 (en) | 2008-05-21 |
KR100626508B1 (en) | 2006-09-20 |
AU2003210901A1 (en) | 2003-09-09 |
CN100483545C (en) | 2009-04-29 |
CN1647210A (en) | 2005-07-27 |
JP2005518627A (en) | 2005-06-23 |
ATE396482T1 (en) | 2008-06-15 |
US20050018493A1 (en) | 2005-01-27 |
CN101261880B (en) | 2011-06-15 |
EP1476877A1 (en) | 2004-11-17 |
US6791885B2 (en) | 2004-09-14 |
JP4619004B2 (en) | 2011-01-26 |
TW200303549A (en) | 2003-09-01 |
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