WO2003081671A3 - Logische bauteile aus organischen feldeffekttransistoren - Google Patents

Logische bauteile aus organischen feldeffekttransistoren Download PDF

Info

Publication number
WO2003081671A3
WO2003081671A3 PCT/DE2003/000843 DE0300843W WO03081671A3 WO 2003081671 A3 WO2003081671 A3 WO 2003081671A3 DE 0300843 W DE0300843 W DE 0300843W WO 03081671 A3 WO03081671 A3 WO 03081671A3
Authority
WO
WIPO (PCT)
Prior art keywords
logic components
field effect
effect transistors
organic field
ofets
Prior art date
Application number
PCT/DE2003/000843
Other languages
English (en)
French (fr)
Other versions
WO2003081671A2 (de
Inventor
Juergen Ficker
Walter Fix
Andreas Ullmann
Original Assignee
Siemens Ag
Juergen Ficker
Walter Fix
Andreas Ullmann
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Siemens Ag, Juergen Ficker, Walter Fix, Andreas Ullmann filed Critical Siemens Ag
Priority to US10/508,640 priority Critical patent/US7223995B2/en
Priority to EP03720186A priority patent/EP1502301A2/de
Priority to JP2003579280A priority patent/JP4171703B2/ja
Publication of WO2003081671A2 publication Critical patent/WO2003081671A2/de
Publication of WO2003081671A3 publication Critical patent/WO2003081671A3/de

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K19/00Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
    • H10K19/10Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/40Organic transistors
    • H10K10/46Field-effect transistors, e.g. organic thin-film transistors [OTFT]
    • H10K10/462Insulated gate field-effect transistors [IGFETs]

Abstract

Mit Hilfe der Erfindung lassen sich schnelle logische Gatter, die auf organischen Feldeffekt-Transistoren aufbauen, trotz konventioneller p-Mos-Technik herstellen. Dies ist zum einen auf den Frühsättigungseffekt von OFETs mit sehr dünnen Halbleiterschichten zurückzuführen, zum anderen auf OFETs mit speziellen Eigenschaften für organische Logikbauelemente und in einem neuen schaltungstechnischen Layout dieser Logikbauelemente.
PCT/DE2003/000843 2002-03-21 2003-03-14 Logische bauteile aus organischen feldeffekttransistoren WO2003081671A2 (de)

Priority Applications (3)

Application Number Priority Date Filing Date Title
US10/508,640 US7223995B2 (en) 2002-03-21 2003-03-14 Logic components comprising organic field effect transistors
EP03720186A EP1502301A2 (de) 2002-03-21 2003-03-14 Logische bauteile aus organischen feldeffekttransistoren
JP2003579280A JP4171703B2 (ja) 2002-03-21 2003-03-14 有機電界効果トランジスタを含む論理構成要素

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10212640A DE10212640B4 (de) 2002-03-21 2002-03-21 Logische Bauteile aus organischen Feldeffekttransistoren
DE10212640.2 2002-03-21

Publications (2)

Publication Number Publication Date
WO2003081671A2 WO2003081671A2 (de) 2003-10-02
WO2003081671A3 true WO2003081671A3 (de) 2004-11-25

Family

ID=28050743

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/DE2003/000843 WO2003081671A2 (de) 2002-03-21 2003-03-14 Logische bauteile aus organischen feldeffekttransistoren

Country Status (6)

Country Link
US (1) US7223995B2 (de)
EP (1) EP1502301A2 (de)
JP (1) JP4171703B2 (de)
CN (1) CN100361389C (de)
DE (1) DE10212640B4 (de)
WO (1) WO2003081671A2 (de)

Families Citing this family (16)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE10043204A1 (de) * 2000-09-01 2002-04-04 Siemens Ag Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung
DE10330064B3 (de) * 2003-07-03 2004-12-09 Siemens Ag Logikgatter mit potentialfreier Gate-Elektrode für organische integrierte Schaltungen
US20050156656A1 (en) * 2004-01-15 2005-07-21 Rotzoll Robert R. Non-quasistatic rectifier circuit
DE102004059467A1 (de) * 2004-12-10 2006-07-20 Polyic Gmbh & Co. Kg Gatter aus organischen Feldeffekttransistoren
DE102005009819A1 (de) * 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe
DE102005009820A1 (de) * 2005-03-01 2006-09-07 Polyic Gmbh & Co. Kg Elektronikbaugruppe mit organischen Logik-Schaltelementen
DE102005017655B4 (de) 2005-04-15 2008-12-11 Polyic Gmbh & Co. Kg Mehrschichtiger Verbundkörper mit elektronischer Funktion
DE102005031448A1 (de) 2005-07-04 2007-01-11 Polyic Gmbh & Co. Kg Aktivierbare optische Schicht
DE102005035589A1 (de) 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Verfahren zur Herstellung eines elektronischen Bauelements
DE102005035590A1 (de) * 2005-07-29 2007-02-01 Polyic Gmbh & Co. Kg Elektronisches Bauelement
DE102005042166A1 (de) * 2005-09-06 2007-03-15 Polyic Gmbh & Co.Kg Organisches Bauelement und ein solches umfassende elektrische Schaltung
DE102005044306A1 (de) * 2005-09-16 2007-03-22 Polyic Gmbh & Co. Kg Elektronische Schaltung und Verfahren zur Herstellung einer solchen
ITVA20060029A1 (it) * 2006-05-30 2007-11-30 St Microelectronics Srl Amplificatore analogico a transconduttanza
US20090004368A1 (en) * 2007-06-29 2009-01-01 Weyerhaeuser Co. Systems and methods for curing a deposited layer on a substrate
DE102007059231A1 (de) * 2007-12-07 2009-06-10 Polyic Gmbh & Co. Kg Elektronikbaugruppe mit organischen Schaltelementen
US8463116B2 (en) 2008-07-01 2013-06-11 Tap Development Limited Liability Company Systems for curing deposited material using feedback control

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152560A (ja) * 1991-03-22 1993-06-18 Mitsubishi Electric Corp インバータ

Family Cites Families (103)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US18911A (en) * 1857-12-22 Glass knob for doors
US3512052A (en) * 1968-01-11 1970-05-12 Gen Motors Corp Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric
US3769096A (en) * 1971-03-12 1973-10-30 Bell Telephone Labor Inc Pyroelectric devices
JPS543594B2 (de) * 1973-10-12 1979-02-24
JPS54101176A (en) * 1978-01-26 1979-08-09 Shinetsu Polymer Co Contact member for push switch
US4442019A (en) * 1978-05-26 1984-04-10 Marks Alvin M Electroordered dipole suspension
US4340657A (en) * 1980-02-19 1982-07-20 Polychrome Corporation Novel radiation-sensitive articles
DE3338597A1 (de) 1983-10-24 1985-05-02 GAO Gesellschaft für Automation und Organisation mbH, 8000 München Datentraeger mit integriertem schaltkreis und verfahren zur herstellung desselben
JPS60117769A (ja) 1983-11-30 1985-06-25 Fujitsu Ltd 半導体メモリ装置
DE3768112D1 (de) * 1986-03-03 1991-04-04 Toshiba Kawasaki Kk Strahlungsdetektor.
JP2728412B2 (ja) 1987-12-25 1998-03-18 株式会社日立製作所 半導体装置
GB2215307B (en) * 1988-03-04 1991-10-09 Unisys Corp Electronic component transportation container
US5364735A (en) * 1988-07-01 1994-11-15 Sony Corporation Multiple layer optical record medium with protective layers and method for producing same
US4937119A (en) * 1988-12-15 1990-06-26 Hoechst Celanese Corp. Textured organic optical data storage media and methods of preparation
US5892244A (en) * 1989-01-10 1999-04-06 Mitsubishi Denki Kabushiki Kaisha Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor
US6331356B1 (en) * 1989-05-26 2001-12-18 International Business Machines Corporation Patterns of electrically conducting polymers and their application as electrodes or electrical contacts
US5206525A (en) * 1989-12-27 1993-04-27 Nippon Petrochemicals Co., Ltd. Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials
FR2664430B1 (fr) * 1990-07-04 1992-09-18 Centre Nat Rech Scient Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques.
FR2673041A1 (fr) * 1991-02-19 1992-08-21 Gemplus Card Int Procede de fabrication de micromodules de circuit integre et micromodule correspondant.
US5408109A (en) * 1991-02-27 1995-04-18 The Regents Of The University Of California Visible light emitting diodes fabricated from soluble semiconducting polymers
JPH0580530A (ja) * 1991-09-24 1993-04-02 Hitachi Ltd 薄膜パターン製造方法
US5173835A (en) * 1991-10-15 1992-12-22 Motorola, Inc. Voltage variable capacitor
JPH0770470B2 (ja) * 1991-10-30 1995-07-31 フラウンホファー・ゲゼルシャフト・ツール・フォルデルング・デル・アンゲバンテン・フォルシュング・アインゲトラーゲネル・フェライン 照射装置
JP2709223B2 (ja) * 1992-01-30 1998-02-04 三菱電機株式会社 非接触形携帯記憶装置
DE4243832A1 (de) 1992-12-23 1994-06-30 Daimler Benz Ag Tastsensoranordnung
JP3457348B2 (ja) * 1993-01-15 2003-10-14 株式会社東芝 半導体装置の製造方法
FR2701117B1 (fr) * 1993-02-04 1995-03-10 Asulab Sa Système de mesures électrochimiques à capteur multizones, et son application au dosage du glucose.
US5567550A (en) * 1993-03-25 1996-10-22 Texas Instruments Incorporated Method of making a mask for making integrated circuits
JPH0722669A (ja) * 1993-07-01 1995-01-24 Mitsubishi Electric Corp 可塑性機能素子
AU7563294A (en) * 1993-08-24 1995-03-21 Metrika Laboratories, Inc. Novel disposable electronic assay device
JP3460863B2 (ja) * 1993-09-17 2003-10-27 三菱電機株式会社 半導体装置の製造方法
FR2710413B1 (fr) * 1993-09-21 1995-11-03 Asulab Sa Dispositif de mesure pour capteurs amovibles.
US5556706A (en) * 1993-10-06 1996-09-17 Matsushita Electric Industrial Co., Ltd. Conductive layered product and method of manufacturing the same
IL111151A (en) 1994-10-03 1998-09-24 News Datacom Ltd Secure access systems
WO1995031833A2 (en) * 1994-05-16 1995-11-23 Philips Electronics N.V. Semiconductor device provided with an organic semiconductor material
JP3246189B2 (ja) 1994-06-28 2002-01-15 株式会社日立製作所 半導体表示装置
US5574291A (en) * 1994-12-09 1996-11-12 Lucent Technologies Inc. Article comprising a thin film transistor with low conductivity organic layer
US5630986A (en) * 1995-01-13 1997-05-20 Bayer Corporation Dispensing instrument for fluid monitoring sensors
JP3068430B2 (ja) * 1995-04-25 2000-07-24 富山日本電気株式会社 固体電解コンデンサ及びその製造方法
US5652645A (en) * 1995-07-24 1997-07-29 Anvik Corporation High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates
US5625199A (en) * 1996-01-16 1997-04-29 Lucent Technologies Inc. Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors
GB2310493B (en) * 1996-02-26 2000-08-02 Unilever Plc Determination of the characteristics of fluid
DE19629656A1 (de) * 1996-07-23 1998-01-29 Boehringer Mannheim Gmbh Diagnostischer Testträger mit mehrschichtigem Testfeld und Verfahren zur Bestimmung von Analyt mit dessen Hilfe
US5946551A (en) * 1997-03-25 1999-08-31 Dimitrakopoulos; Christos Dimitrios Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric
US6344662B1 (en) * 1997-03-25 2002-02-05 International Business Machines Corporation Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages
KR100248392B1 (ko) * 1997-05-15 2000-09-01 정선종 유기물전계효과트랜지스터와결합된유기물능동구동전기발광소자및그소자의제작방법
JP4509228B2 (ja) * 1997-08-22 2010-07-21 コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ 有機材料から成る電界効果トランジスタ及びその製造方法
EP0966758B1 (de) * 1997-08-22 2015-08-26 Creator Technology B.V. Verfahren zur herstellung einer senkrechten verbindung zwischen dünnfilmbauelementen der mikroelektronik
WO1999013441A2 (en) * 1997-09-11 1999-03-18 Precision Dynamics Corporation Radio frequency identification tag on flexible substrate
US6251513B1 (en) * 1997-11-08 2001-06-26 Littlefuse, Inc. Polymer composites for overvoltage protection
JPH11142810A (ja) 1997-11-12 1999-05-28 Nintendo Co Ltd 携帯型情報処理装置
US5997817A (en) * 1997-12-05 1999-12-07 Roche Diagnostics Corporation Electrochemical biosensor test strip
WO1999030432A1 (en) * 1997-12-05 1999-06-17 Koninklijke Philips Electronics N.V. Identification transponder
US5998805A (en) * 1997-12-11 1999-12-07 Motorola, Inc. Active matrix OED array with improved OED cathode
US6083104A (en) * 1998-01-16 2000-07-04 Silverlit Toys (U.S.A.), Inc. Programmable toy with an independent game cartridge
AU739848B2 (en) * 1998-01-28 2001-10-18 Thin Film Electronics Asa A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures
US6087196A (en) * 1998-01-30 2000-07-11 The Trustees Of Princeton University Fabrication of organic semiconductor devices using ink jet printing
US6045977A (en) * 1998-02-19 2000-04-04 Lucent Technologies Inc. Process for patterning conductive polyaniline films
DE19816860A1 (de) 1998-03-06 1999-11-18 Deutsche Telekom Ag Chipkarte, insbesondere Guthabenkarte
US6033202A (en) * 1998-03-27 2000-03-07 Lucent Technologies Inc. Mold for non - photolithographic fabrication of microstructures
GB9808061D0 (en) * 1998-04-16 1998-06-17 Cambridge Display Tech Ltd Polymer devices
GB9808806D0 (en) 1998-04-24 1998-06-24 Cambridge Display Tech Ltd Selective deposition of polymer films
TW410478B (en) * 1998-05-29 2000-11-01 Lucent Technologies Inc Thin-film transistor monolithically integrated with an organic light-emitting diode
US5967048A (en) * 1998-06-12 1999-10-19 Howard A. Fromson Method and apparatus for the multiple imaging of a continuous web
US6215130B1 (en) * 1998-08-20 2001-04-10 Lucent Technologies Inc. Thin film transistors
US6330464B1 (en) * 1998-08-26 2001-12-11 Sensors For Medicine & Science Optical-based sensing devices
US6384804B1 (en) * 1998-11-25 2002-05-07 Lucent Techonologies Inc. Display comprising organic smart pixels
US6506438B2 (en) * 1998-12-15 2003-01-14 E Ink Corporation Method for printing of transistor arrays on plastic substrates
US6321571B1 (en) * 1998-12-21 2001-11-27 Corning Incorporated Method of making glass structures for flat panel displays
US6114088A (en) * 1999-01-15 2000-09-05 3M Innovative Properties Company Thermal transfer element for forming multilayer devices
GB2347013A (en) * 1999-02-16 2000-08-23 Sharp Kk Charge-transport structures
US6517955B1 (en) * 1999-02-22 2003-02-11 Nippon Steel Corporation High strength galvanized steel plate excellent in adhesion of plated metal and formability in press working and high strength alloy galvanized steel plate and method for production thereof
AU5646800A (en) * 1999-03-02 2000-09-21 Helix Biopharma Corporation Card-based biosensor device
US6180956B1 (en) 1999-03-03 2001-01-30 International Business Machine Corp. Thin film transistors with organic-inorganic hybrid materials as semiconducting channels
US6207472B1 (en) * 1999-03-09 2001-03-27 International Business Machines Corporation Low temperature thin film transistor fabrication
US6498114B1 (en) * 1999-04-09 2002-12-24 E Ink Corporation Method for forming a patterned semiconductor film
US6072716A (en) * 1999-04-14 2000-06-06 Massachusetts Institute Of Technology Memory structures and methods of making same
DE19921024C2 (de) 1999-05-06 2001-03-08 Wolfgang Eichelmann Videospielanlage
US6383664B2 (en) 1999-05-11 2002-05-07 The Dow Chemical Company Electroluminescent or photocell device having protective packaging
US6593690B1 (en) * 1999-09-03 2003-07-15 3M Innovative Properties Company Large area organic electronic devices having conducting polymer buffer layers and methods of making same
US6517995B1 (en) * 1999-09-14 2003-02-11 Massachusetts Institute Of Technology Fabrication of finely featured devices by liquid embossing
US6340822B1 (en) * 1999-10-05 2002-01-22 Agere Systems Guardian Corp. Article comprising vertically nano-interconnected circuit devices and method for making the same
WO2001027998A1 (en) * 1999-10-11 2001-04-19 Koninklijke Philips Electronics N.V. Integrated circuit
US6335539B1 (en) * 1999-11-05 2002-01-01 International Business Machines Corporation Method for improving performance of organic semiconductors in bottom electrode structure
US6284562B1 (en) * 1999-11-17 2001-09-04 Agere Systems Guardian Corp. Thin film transistors
US6621098B1 (en) * 1999-11-29 2003-09-16 The Penn State Research Foundation Thin-film transistor and methods of manufacturing and incorporating a semiconducting organic material
US6197663B1 (en) * 1999-12-07 2001-03-06 Lucent Technologies Inc. Process for fabricating integrated circuit devices having thin film transistors
AU2015901A (en) * 1999-12-21 2001-07-03 Plastic Logic Limited Inkjet-fabricated integrated circuits
US6706159B2 (en) * 2000-03-02 2004-03-16 Diabetes Diagnostics Combined lancet and electrochemical analyte-testing apparatus
US6329226B1 (en) * 2000-06-01 2001-12-11 Agere Systems Guardian Corp. Method for fabricating a thin-film transistor
DE10033112C2 (de) * 2000-07-07 2002-11-14 Siemens Ag Verfahren zur Herstellung und Strukturierung organischer Feldeffekt-Transistoren (OFET), hiernach gefertigter OFET und seine Verwendung
US7875975B2 (en) * 2000-08-18 2011-01-25 Polyic Gmbh & Co. Kg Organic integrated circuit completely encapsulated by multi-layered barrier and included in RFID tag
DE10045192A1 (de) * 2000-09-13 2002-04-04 Siemens Ag Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers
KR20020036916A (ko) * 2000-11-11 2002-05-17 주승기 실리콘 박막의 결정화 방법 및 이에 의해 제조된 반도체소자
KR100390522B1 (ko) * 2000-12-01 2003-07-07 피티플러스(주) 결정질 실리콘 활성층을 포함하는 박막트랜지스터 제조 방법
US20020170897A1 (en) * 2001-05-21 2002-11-21 Hall Frank L. Methods for preparing ball grid array substrates via use of a laser
US6870180B2 (en) * 2001-06-08 2005-03-22 Lucent Technologies Inc. Organic polarizable gate transistor apparatus and method
JP2003089259A (ja) * 2001-09-18 2003-03-25 Hitachi Ltd パターン形成方法およびパターン形成装置
JP2003098221A (ja) 2001-09-25 2003-04-03 Mitsubishi Electric Corp 半導体装置、半導体装置の試験方法及び半導体装置の試験装置
US7351660B2 (en) * 2001-09-28 2008-04-01 Hrl Laboratories, Llc Process for producing high performance interconnects
US6812509B2 (en) * 2002-06-28 2004-11-02 Palo Alto Research Center Inc. Organic ferroelectric memory cells
US6854139B2 (en) * 2002-07-26 2005-02-15 Sheila Lamy Bed covering fastening system
US6870183B2 (en) * 2002-11-04 2005-03-22 Advanced Micro Devices, Inc. Stacked organic memory devices and methods of operating and fabricating

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH05152560A (ja) * 1991-03-22 1993-06-18 Mitsubishi Electric Corp インバータ

Non-Patent Citations (4)

* Cited by examiner, † Cited by third party
Title
BROWN A R ET AL: "Field-effect transistors made from solution-processed organic semiconductors", SYNTHETIC METALS, ELSEVIER SEQUOIA, LAUSANNE, CH, vol. 88, no. 1, 30 April 1997 (1997-04-30), pages 37 - 55, XP002110216, ISSN: 0379-6779 *
FICKER J ET AL: "DYNAMIC AND LIFETIME MEASUREMENTS OF POLYMER OFETS AND INTEGRATED PLASTIC CIRCUITS", PROCEEDINGS OF THE SPIE, SPIE, BELLINGHAM, VA, US, vol. 4466, 2001, pages 95 - 102, XP001197302, ISSN: 0277-786X *
PATENT ABSTRACTS OF JAPAN vol. 017, no. 542 (E - 1441) 29 September 1993 (1993-09-29) *
ULLMANN A ET AL: "HIGH PERFORMANCE ORGANIC FIELD-EFFECT TRANSISTORS AND INTEGRATED INVERTERS", MATERIALS RESEARCH SOCIETY SYMPOSIUM PROCEEDINGS, MATERIALS RESEARCH SOCIETY, PITTSBURG, PA, US, vol. 665, 20 April 2001 (2001-04-20), pages 265 - 270, XP008032774, ISSN: 0272-9172 *

Also Published As

Publication number Publication date
US20050277240A1 (en) 2005-12-15
WO2003081671A2 (de) 2003-10-02
EP1502301A2 (de) 2005-02-02
DE10212640B4 (de) 2004-02-05
JP4171703B2 (ja) 2008-10-29
DE10212640A1 (de) 2003-10-23
CN1695303A (zh) 2005-11-09
US7223995B2 (en) 2007-05-29
JP2005521313A (ja) 2005-07-14
CN100361389C (zh) 2008-01-09

Similar Documents

Publication Publication Date Title
WO2003081671A3 (de) Logische bauteile aus organischen feldeffekttransistoren
TW200727404A (en) Integrated circuit and method for its manufacture
TW200518350A (en) Integrated circuit device, semiconductor device and fabrication method thereof
WO2006066265A3 (en) Drain extended pmos transistors and methods for making the same
TW200610018A (en) Dual work-function metal gates
WO2002080227A3 (en) Memory address and decode circuits with ultra thin body transistors
WO2006053292A3 (en) Apparatus and method for enhanced transient blocking
WO2004040668A3 (de) Feldeffekttransistor-anordnung und schaltkreis-array
TW200739907A (en) CMOS device having PMOS and NMOS transistors with different gate structures
WO1999066540A3 (en) An integrated inorganic/organic complementary thin-film transistor circuit and a method for its production
WO2006061000A3 (de) Gatter aus organischen feldeffekttransistoren
TW200614489A (en) Separately strained n-channel and p-channel transistors
WO2006078573A3 (en) Integrated circuit including power diode
WO2006031425A3 (en) Cmos device having different nitrogen amounts in nmos and pmos gate dielectric layers
WO2004032257A3 (de) Folie mit organischen halbleitern
WO2003038897A3 (de) Elektronikbauteil, schaltungskonzept dafür und herstellungsverfahren
TW200742084A (en) Semiconductor device
WO2006028577A3 (en) Using different gate dielectrics with nmos and pmos transistors of a complementary metal oxide semiconductor integrated circuit
ATE489730T1 (de) Elektronisches bauteil
TW200620653A (en) Method of forming a raised source/drain and a semiconductor device employing the same
WO2005027216A3 (en) Electronic devices
WO2006052791A3 (en) Insulation film semiconductor device and method
DE60237724D1 (de) Finfet sram-zelle mit invertierten finfet-dünnschichttransistoren
WO2003079566A3 (en) Drain activated/deactivated ac coupled bandpass rf switch
WO2005112104A3 (en) Cmos transistor using high stress liner layer

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CN JP US

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR

DFPE Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed before 20040101)
121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2003720186

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 2003579280

Country of ref document: JP

WWE Wipo information: entry into national phase

Ref document number: 2003810086X

Country of ref document: CN

WWP Wipo information: published in national office

Ref document number: 2003720186

Country of ref document: EP

WWE Wipo information: entry into national phase

Ref document number: 10508640

Country of ref document: US