WO2003083182A3 - Process window for gap-fill on very high aspect ratio structures using additives in low acid copper baths - Google Patents

Process window for gap-fill on very high aspect ratio structures using additives in low acid copper baths Download PDF

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Publication number
WO2003083182A3
WO2003083182A3 PCT/US2003/002280 US0302280W WO03083182A3 WO 2003083182 A3 WO2003083182 A3 WO 2003083182A3 US 0302280 W US0302280 W US 0302280W WO 03083182 A3 WO03083182 A3 WO 03083182A3
Authority
WO
WIPO (PCT)
Prior art keywords
aspect ratio
high aspect
additives
fill
gap
Prior art date
Application number
PCT/US2003/002280
Other languages
French (fr)
Other versions
WO2003083182A2 (en
Inventor
Srinivas Gandikota
Chris Mcguirk
Deenesh Padhi
Sivakami Ramanathan
Girish Dixit
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to MXPA04007362A priority Critical patent/MXPA04007362A/en
Publication of WO2003083182A2 publication Critical patent/WO2003083182A2/en
Publication of WO2003083182A3 publication Critical patent/WO2003083182A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D7/00—Electroplating characterised by the article coated
    • C25D7/12—Semiconductors
    • C25D7/123—Semiconductors first coated with a seed layer or a conductive layer
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D3/00—Electroplating: Baths therefor
    • C25D3/02—Electroplating: Baths therefor from solutions
    • C25D3/38—Electroplating: Baths therefor from solutions of copper
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/40—Forming printed elements for providing electric connections to or between printed circuits
    • H05K3/42—Plated through-holes or plated via connections
    • H05K3/423—Plated through-holes or plated via connections characterised by electroplating method

Abstract

The present invention provides a composition and method for void-free plating of a metal into high aspect ratio features. The plating process is carried out in a plating solution containing metal at a molar concentration of between about 0.4 M and about 0.9 M, an acid at a concentration of between about 4 mg/L and about 40 mg/L, a suppressor at a concentration of between about 2 mL/L and about 15 mL/L, an accelerator at a concentration of between about 1.5 mL/L and about 8 mL/L, and a leveler at a concentration of between about 4 mL/L and about 11 mL/L.
PCT/US2003/002280 2002-01-29 2003-01-24 Process window for gap-fill on very high aspect ratio structures using additives in low acid copper baths WO2003083182A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MXPA04007362A MXPA04007362A (en) 2002-01-29 2003-01-24 Reduction of hair growth.

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/109,560 US20020112964A1 (en) 2000-07-12 2002-03-26 Process window for gap-fill on very high aspect ratio structures using additives in low acid copper baths
US10/109,560 2002-03-26

Publications (2)

Publication Number Publication Date
WO2003083182A2 WO2003083182A2 (en) 2003-10-09
WO2003083182A3 true WO2003083182A3 (en) 2005-05-12

Family

ID=28673628

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/002280 WO2003083182A2 (en) 2002-01-29 2003-01-24 Process window for gap-fill on very high aspect ratio structures using additives in low acid copper baths

Country Status (3)

Country Link
US (1) US20020112964A1 (en)
TW (1) TW200305937A (en)
WO (1) WO2003083182A2 (en)

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US7371311B2 (en) * 2003-10-08 2008-05-13 Intel Corporation Modified electroplating solution components in a low-acid electrolyte solution
US7438794B2 (en) * 2004-09-30 2008-10-21 Intel Corporation Method of copper electroplating to improve gapfill
TWI400365B (en) * 2004-11-12 2013-07-01 Enthone Copper electrodeposition in microelectronics
US20070178697A1 (en) * 2006-02-02 2007-08-02 Enthone Inc. Copper electrodeposition in microelectronics
TWI341554B (en) * 2007-08-02 2011-05-01 Enthone Copper metallization of through silicon via
US7905994B2 (en) 2007-10-03 2011-03-15 Moses Lake Industries, Inc. Substrate holder and electroplating system
US8262894B2 (en) 2009-04-30 2012-09-11 Moses Lake Industries, Inc. High speed copper plating bath
TW201218277A (en) * 2010-09-09 2012-05-01 Novellus Systems Inc By-product mitigation in through-silicon-via plating
US9816193B2 (en) 2011-01-07 2017-11-14 Novellus Systems, Inc. Configuration and method of operation of an electrodeposition system for improved process stability and performance
US9816196B2 (en) 2012-04-27 2017-11-14 Novellus Systems, Inc. Method and apparatus for electroplating semiconductor wafer when controlling cations in electrolyte
CN104838477A (en) * 2012-12-13 2015-08-12 应用材料公司 Methods for achieving metal fill in small features
CN114351195A (en) * 2022-03-19 2022-04-15 深圳市创智成功科技有限公司 Electro-coppering formula for pulse through hole filling and electro-coppering process thereof

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Also Published As

Publication number Publication date
US20020112964A1 (en) 2002-08-22
TW200305937A (en) 2003-11-01
WO2003083182A2 (en) 2003-10-09

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