WO2003083947A3 - Folded bit line dram with vertical ultra thin body transistors - Google Patents

Folded bit line dram with vertical ultra thin body transistors Download PDF

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Publication number
WO2003083947A3
WO2003083947A3 PCT/US2002/003231 US0203231W WO03083947A3 WO 2003083947 A3 WO2003083947 A3 WO 2003083947A3 US 0203231 W US0203231 W US 0203231W WO 03083947 A3 WO03083947 A3 WO 03083947A3
Authority
WO
WIPO (PCT)
Prior art keywords
single crystalline
ultra thin
bit line
contact layer
folded bit
Prior art date
Application number
PCT/US2002/003231
Other languages
French (fr)
Other versions
WO2003083947A2 (en
Inventor
Leonard Forbes
Kie Y Ahn
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to KR1020037010480A priority Critical patent/KR100594524B1/en
Priority to JP2003581264A priority patent/JP4431401B2/en
Priority to EP02706137A priority patent/EP1419532A4/en
Priority to AU2002240244A priority patent/AU2002240244A1/en
Publication of WO2003083947A2 publication Critical patent/WO2003083947A2/en
Publication of WO2003083947A3 publication Critical patent/WO2003083947A3/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/34—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66666—Vertical transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/01—Manufacture or treatment
    • H10B12/02—Manufacture or treatment for one transistor one-capacitor [1T-1C] memory cells
    • H10B12/05—Making the transistor
    • H10B12/053—Making the transistor the transistor being at least partially in a trench in the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1203—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body the substrate comprising an insulating body on a semiconductor body, e.g. SOI
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7827—Vertical transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78642—Vertical transistors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/31—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor
    • H10B12/315—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells having a storage electrode stacked over the transistor with the capacitor higher than a bit line
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B12/00—Dynamic random access memory [DRAM] devices
    • H10B12/30—DRAM devices comprising one-transistor - one-capacitor [1T-1C] memory cells
    • H10B12/48—Data lines or contacts therefor
    • H10B12/482—Bit lines

Abstract

A folded bit line DRAM device made of an array of memory cells is provided wherein each memory cell has a pillar which extends outwardly from a semiconductor substrate. Each pillar has a single crystalline first contact layer (304) and a single crystalline second contact layer (306) which are separated by an oxide layer (308). A single crystalline vertical transistor has an ultra thin single crystalline vertical first source/drain region (314) coupled to the first contact layer (304), an ultra thin single crystalline vertical second source/drain region (316) coupled to the second contact layer (306), and an ultra thin single crystalline vertical body region (312) which opposes the oxide layer (308) and couples the first (314) and the second (316) source/drain regions.
PCT/US2002/003231 2001-02-09 2002-02-04 Folded bit line dram with vertical ultra thin body transistors WO2003083947A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1020037010480A KR100594524B1 (en) 2001-02-09 2002-02-04 Folded bit line dram with vertical ultra-thin body transistors
JP2003581264A JP4431401B2 (en) 2001-02-09 2002-02-04 Folded bit line DRAM with ultra-thin vertical body transistor
EP02706137A EP1419532A4 (en) 2001-02-09 2002-02-04 Folded bit line dram with vertical ultra thin body transistors
AU2002240244A AU2002240244A1 (en) 2001-02-09 2002-02-04 Folded bit line dram with vertical ultra thin body transistors

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US09/780,130 US6559491B2 (en) 2001-02-09 2001-02-09 Folded bit line DRAM with ultra thin body transistors
US09/780,130 2001-02-09

Publications (2)

Publication Number Publication Date
WO2003083947A2 WO2003083947A2 (en) 2003-10-09
WO2003083947A3 true WO2003083947A3 (en) 2003-12-04

Family

ID=25118705

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2002/003231 WO2003083947A2 (en) 2001-02-09 2002-02-04 Folded bit line dram with vertical ultra thin body transistors

Country Status (8)

Country Link
US (3) US6559491B2 (en)
EP (1) EP1419532A4 (en)
JP (1) JP4431401B2 (en)
KR (1) KR100594524B1 (en)
CN (1) CN100492644C (en)
AU (1) AU2002240244A1 (en)
SG (1) SG161735A1 (en)
WO (1) WO2003083947A2 (en)

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US20050190617A1 (en) 2005-09-01
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US6995057B2 (en) 2006-02-07
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US20040007721A1 (en) 2004-01-15
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