WO2003083951A1 - Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same - Google Patents
Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same Download PDFInfo
- Publication number
- WO2003083951A1 WO2003083951A1 PCT/US2002/041312 US0241312W WO03083951A1 WO 2003083951 A1 WO2003083951 A1 WO 2003083951A1 US 0241312 W US0241312 W US 0241312W WO 03083951 A1 WO03083951 A1 WO 03083951A1
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- WO
- WIPO (PCT)
- Prior art keywords
- well structure
- layer
- channel
- channel layer
- diffusion barrier
- Prior art date
Links
- 239000002019 doping agent Substances 0.000 title claims abstract description 78
- 238000000034 method Methods 0.000 title claims description 67
- 239000004065 semiconductor Substances 0.000 title claims description 67
- 238000009792 diffusion process Methods 0.000 claims abstract description 45
- 238000002513 implantation Methods 0.000 claims abstract description 42
- 230000004888 barrier function Effects 0.000 claims abstract description 33
- 230000015572 biosynthetic process Effects 0.000 claims abstract description 14
- 230000005669 field effect Effects 0.000 claims abstract description 12
- 239000000203 mixture Substances 0.000 claims abstract description 5
- 238000009413 insulation Methods 0.000 claims description 46
- 239000000758 substrate Substances 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 10
- 150000002500 ions Chemical class 0.000 claims description 5
- 230000007423 decrease Effects 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 abstract description 12
- 238000005468 ion implantation Methods 0.000 abstract description 6
- 230000008569 process Effects 0.000 description 39
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 12
- 125000004429 atom Chemical group 0.000 description 10
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical group [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 8
- 238000002955 isolation Methods 0.000 description 8
- 229910052710 silicon Inorganic materials 0.000 description 8
- 239000010703 silicon Substances 0.000 description 8
- -1 arsenic ions Chemical class 0.000 description 7
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- 235000012239 silicon dioxide Nutrition 0.000 description 6
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- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 5
- 125000006850 spacer group Chemical group 0.000 description 5
- 229910052581 Si3N4 Inorganic materials 0.000 description 4
- 229910052785 arsenic Inorganic materials 0.000 description 4
- 238000005530 etching Methods 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 4
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical group [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 239000002800 charge carrier Substances 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 230000000295 complement effect Effects 0.000 description 3
- BHEPBYXIRTUNPN-UHFFFAOYSA-N hydridophosphorus(.) (triplet) Chemical compound [PH] BHEPBYXIRTUNPN-UHFFFAOYSA-N 0.000 description 3
- 239000011810 insulating material Substances 0.000 description 3
- 239000002245 particle Substances 0.000 description 3
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- 229910052796 boron Inorganic materials 0.000 description 1
- 150000001875 compounds Chemical class 0.000 description 1
- 238000010276 construction Methods 0.000 description 1
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- 229910052594 sapphire Inorganic materials 0.000 description 1
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/8238—Complementary field-effect transistors, e.g. CMOS
- H01L21/823807—Complementary field-effect transistors, e.g. CMOS with a particular manufacturing method of the channel structures, e.g. channel implants, halo or pocket implants, or channel materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/105—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with vertical doping variation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66568—Lateral single gate silicon transistors
- H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
- H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP02807162A EP1488461A1 (en) | 2002-03-28 | 2002-12-20 | Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same |
AU2002357376A AU2002357376A1 (en) | 2002-03-28 | 2002-12-20 | Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same |
KR1020047015186A KR100954874B1 (en) | 2002-03-28 | 2002-12-20 | Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same |
JP2003581268A JP4597531B2 (en) | 2002-03-28 | 2002-12-20 | Semiconductor device with retrograde dopant distribution in channel region and method for manufacturing such semiconductor device |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10214066A DE10214066B4 (en) | 2002-03-28 | 2002-03-28 | Semiconductor device having a retrograde doping profile in a channel region and method of making the same |
DE10214066.9 | 2002-03-28 | ||
US10/282,980 | 2002-10-29 | ||
US10/282,980 US6881641B2 (en) | 2002-03-28 | 2002-10-29 | Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003083951A1 true WO2003083951A1 (en) | 2003-10-09 |
Family
ID=28676032
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2002/041312 WO2003083951A1 (en) | 2002-03-28 | 2002-12-20 | Semiconductor device having a retrograde dopant profile in a channel region and method for fabricating the same |
Country Status (6)
Country | Link |
---|---|
US (1) | US7297994B2 (en) |
EP (1) | EP1488461A1 (en) |
JP (1) | JP4597531B2 (en) |
CN (1) | CN100399576C (en) |
AU (1) | AU2002357376A1 (en) |
WO (1) | WO2003083951A1 (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2008153621A (en) * | 2006-11-22 | 2008-07-03 | Matsushita Electric Ind Co Ltd | Semiconductor device and method of manufacturing same |
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JPH08293557A (en) * | 1995-04-25 | 1996-11-05 | Hitachi Ltd | Semiconductor device and manufacture thereof |
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US4578128A (en) * | 1984-12-03 | 1986-03-25 | Ncr Corporation | Process for forming retrograde dopant distributions utilizing simultaneous outdiffusion of dopants |
JPH04179160A (en) * | 1990-11-09 | 1992-06-25 | Hitachi Ltd | Semiconductor device |
JPH05183159A (en) * | 1992-01-07 | 1993-07-23 | Fujitsu Ltd | Semiconductor device and fabrication thereof |
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KR100473901B1 (en) * | 1995-12-15 | 2005-08-29 | 코닌클리케 필립스 일렉트로닉스 엔.브이. | Semiconductor Field Effect Device Including SiGe Layer |
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2002
- 2002-12-20 CN CNB028286065A patent/CN100399576C/en not_active Expired - Lifetime
- 2002-12-20 AU AU2002357376A patent/AU2002357376A1/en not_active Abandoned
- 2002-12-20 EP EP02807162A patent/EP1488461A1/en not_active Withdrawn
- 2002-12-20 JP JP2003581268A patent/JP4597531B2/en not_active Expired - Fee Related
- 2002-12-20 WO PCT/US2002/041312 patent/WO2003083951A1/en active Application Filing
-
2005
- 2005-03-04 US US11/072,142 patent/US7297994B2/en not_active Expired - Lifetime
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JPH08293557A (en) * | 1995-04-25 | 1996-11-05 | Hitachi Ltd | Semiconductor device and manufacture thereof |
EP0762499A1 (en) * | 1995-09-08 | 1997-03-12 | Daimler-Benz Aktiengesellschaft | Monolithic integrated device of PIN diode and field effect transistor and method of manufacturing the same |
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Cited By (1)
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---|---|---|---|---|
JP2008153621A (en) * | 2006-11-22 | 2008-07-03 | Matsushita Electric Ind Co Ltd | Semiconductor device and method of manufacturing same |
Also Published As
Publication number | Publication date |
---|---|
JP4597531B2 (en) | 2010-12-15 |
EP1488461A1 (en) | 2004-12-22 |
JP2005522038A (en) | 2005-07-21 |
US7297994B2 (en) | 2007-11-20 |
CN100399576C (en) | 2008-07-02 |
CN1623234A (en) | 2005-06-01 |
AU2002357376A1 (en) | 2003-10-13 |
US20050151202A1 (en) | 2005-07-14 |
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