WO2003085719A3 - Process for making air gap containing semiconducting devices and resulting semiconducting device - Google Patents
Process for making air gap containing semiconducting devices and resulting semiconducting device Download PDFInfo
- Publication number
- WO2003085719A3 WO2003085719A3 PCT/US2003/009956 US0309956W WO03085719A3 WO 2003085719 A3 WO2003085719 A3 WO 2003085719A3 US 0309956 W US0309956 W US 0309956W WO 03085719 A3 WO03085719 A3 WO 03085719A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- air gap
- semiconducting
- resulting
- making air
- layers
- Prior art date
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
- H01L21/02208—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si
- H01L21/02214—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen
- H01L21/02216—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition the precursor containing a compound comprising Si the compound comprising silicon and oxygen the compound being a molecule comprising at least one silicon-oxygen bond and the compound having hydrogen or an organic group attached to the silicon or oxygen, e.g. a siloxane
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02118—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer carbon based polymeric organic or inorganic material, e.g. polyimides, poly cyclobutene or PVC
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- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
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- H01L21/0271—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31144—Etching the insulating layers by chemical or physical means using masks
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- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76264—SOI together with lateral isolation, e.g. using local oxidation of silicon, or dielectric or polycristalline material refilled trench or air gap isolation regions, e.g. completely isolated semiconductor islands
- H01L21/76289—Lateral isolation by air gap
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/7682—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing the dielectric comprising air gaps
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/5222—Capacitive arrangements or effects of, or between wiring layers
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/02274—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition in the presence of a plasma [PECVD]
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- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
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- H01L21/0273—Making masks on semiconductor bodies for further photolithographic processing not provided for in group H01L21/18 or H01L21/34 comprising organic layers characterised by the treatment of photoresist layers
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/312—Organic layers, e.g. photoresist
- H01L21/3121—Layers comprising organo-silicon compounds
- H01L21/3122—Layers comprising organo-silicon compounds layers comprising polysiloxane compounds
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/314—Inorganic layers
- H01L21/316—Inorganic layers composed of oxides or glassy oxides or oxide based glass
- H01L21/31695—Deposition of porous oxides or porous glassy oxides or oxide based porous glass
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- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12044—OLED
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2003582804A JP4531400B2 (en) | 2002-04-02 | 2003-04-01 | Method for manufacturing air gap-containing semiconductor device and semiconductor device obtained |
EP03728320A EP1493183B1 (en) | 2002-04-02 | 2003-04-01 | Process for making air gap containing semiconducting devices and resulting semiconducting device |
US10/505,511 US6946382B2 (en) | 2002-04-02 | 2003-04-01 | Process for making air gap containing semiconducting devices and resulting semiconducting device |
AU2003233470A AU2003233470A1 (en) | 2002-04-02 | 2003-04-01 | Process for making air gap containing semiconducting devices and resulting semiconducting device |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US36949002P | 2002-04-02 | 2002-04-02 | |
US60/369,490 | 2002-04-02 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2003085719A2 WO2003085719A2 (en) | 2003-10-16 |
WO2003085719A3 true WO2003085719A3 (en) | 2004-07-01 |
Family
ID=28791959
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/009956 WO2003085719A2 (en) | 2002-04-02 | 2003-04-01 | Process for making air gap containing semiconducting devices and resulting semiconducting device |
Country Status (5)
Country | Link |
---|---|
US (1) | US6946382B2 (en) |
EP (1) | EP1493183B1 (en) |
JP (1) | JP4531400B2 (en) |
AU (1) | AU2003233470A1 (en) |
WO (1) | WO2003085719A2 (en) |
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JP4574145B2 (en) * | 2002-09-13 | 2010-11-04 | ローム・アンド・ハース・エレクトロニック・マテリアルズ,エル.エル.シー. | Air gap formation |
US7585785B2 (en) * | 2003-02-05 | 2009-09-08 | Dow Global Technologies | Sacrificial benzocyclobutene copolymers for making air gap semiconductor devices |
WO2004072133A1 (en) * | 2003-02-05 | 2004-08-26 | Dow Global Technologies Inc. | Sacrificial styrene benzocyclobutene copolymers for making air gap semiconductor devices |
WO2004073018A2 (en) * | 2003-02-05 | 2004-08-26 | Dow Global Technologies Inc. | Sacrificial benzocyclobutene/norbornene polymers for making air gaps within semiconductor devices |
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US8120168B2 (en) | 2006-03-21 | 2012-02-21 | Promerus Llc | Methods and materials useful for chip stacking, chip and wafer bonding |
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FR2916303B1 (en) * | 2007-05-15 | 2009-07-31 | Commissariat Energie Atomique | PROCESS FOR PRODUCING AIR CAVITIES USING NANOTUBES |
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KR102287343B1 (en) | 2014-07-04 | 2021-08-06 | 삼성전자주식회사 | Hardmask composition and method of forming patterning using the hardmask composition |
KR102287344B1 (en) | 2014-07-25 | 2021-08-06 | 삼성전자주식회사 | Hardmask composition and method of forming patterning using the hardmask composition |
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KR102463893B1 (en) | 2015-04-03 | 2022-11-04 | 삼성전자주식회사 | Hardmask composition and method of forming patterning using the hardmask composition |
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US11034847B2 (en) | 2017-07-14 | 2021-06-15 | Samsung Electronics Co., Ltd. | Hardmask composition, method of forming pattern using hardmask composition, and hardmask formed from hardmask composition |
KR102433666B1 (en) | 2017-07-27 | 2022-08-18 | 삼성전자주식회사 | Hardmask composition, method of forming patterning using the hardmask composition, and hardmask formed from the hardmask composition |
KR102486388B1 (en) | 2017-07-28 | 2023-01-09 | 삼성전자주식회사 | Method of preparing graphene quantum dot, hardmask composition including the graphene quantum dot obtained by the method, method of forming patterning using the hardmask composition, and hardmask formed from the hardmask composition |
KR102287506B1 (en) | 2018-07-11 | 2021-08-09 | 삼성에스디아이 주식회사 | Hardmask composition, hardmask layer and method of forming patterns |
JP7193729B2 (en) * | 2019-03-22 | 2022-12-21 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
KR20200143605A (en) | 2019-06-14 | 2020-12-24 | 삼성전자주식회사 | Method of forming a semiconductor device using a thermally-decomposable layer, a semiconductor fabrication apparatus and the semiconductor device |
JP7390194B2 (en) | 2020-01-17 | 2023-12-01 | 東京エレクトロン株式会社 | Air gap formation method |
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Citations (3)
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EP0227124A2 (en) * | 1985-12-23 | 1987-07-01 | Shell Internationale Researchmaatschappij B.V. | Olefinic benzocyclobutene polymers and processes for the preparation thereof |
WO2002019416A1 (en) * | 2000-09-01 | 2002-03-07 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device having a porous dielectric layer and air gaps |
WO2002019420A2 (en) * | 2000-08-31 | 2002-03-07 | Georgia Tech Research Corporation | Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnection structures |
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ATE255769T1 (en) * | 1997-01-21 | 2003-12-15 | Georgia Tech Res Inst | METHOD FOR MAKING AN AIR GAP SEMICONDUCTOR DEVICE FOR ULTRA-LOW CAPACITY INTERCONNECTIONS |
US6350672B1 (en) * | 1997-07-28 | 2002-02-26 | United Microelectronics Corp. | Interconnect structure with gas dielectric compatible with unlanded vias |
JP2002530505A (en) | 1998-11-24 | 2002-09-17 | ザ ダウ ケミカル カンパニー | Composition containing crosslinkable matrix precursor and porogen, and porous matrix produced therefrom |
US6156812A (en) | 1999-04-09 | 2000-12-05 | Honeywell International Inc. | Nanoporous material fabricated using polymeric template strands |
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US6359091B1 (en) | 1999-11-22 | 2002-03-19 | The Dow Chemical Company | Polyarylene compositions with enhanced modulus profiles |
US6815329B2 (en) * | 2000-02-08 | 2004-11-09 | International Business Machines Corporation | Multilayer interconnect structure containing air gaps and method for making |
US6451712B1 (en) | 2000-12-18 | 2002-09-17 | International Business Machines Corporation | Method for forming a porous dielectric material layer in a semiconductor device and device formed |
US20030162890A1 (en) | 2002-02-15 | 2003-08-28 | Kalantar Thomas H. | Nanoscale polymerized hydrocarbon particles and methods of making and using such particles |
US6949456B2 (en) * | 2002-10-31 | 2005-09-27 | Asm Japan K.K. | Method for manufacturing semiconductor device having porous structure with air-gaps |
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2003
- 2003-04-01 JP JP2003582804A patent/JP4531400B2/en not_active Expired - Fee Related
- 2003-04-01 EP EP03728320A patent/EP1493183B1/en not_active Expired - Lifetime
- 2003-04-01 AU AU2003233470A patent/AU2003233470A1/en not_active Abandoned
- 2003-04-01 US US10/505,511 patent/US6946382B2/en not_active Expired - Lifetime
- 2003-04-01 WO PCT/US2003/009956 patent/WO2003085719A2/en active Application Filing
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EP0227124A2 (en) * | 1985-12-23 | 1987-07-01 | Shell Internationale Researchmaatschappij B.V. | Olefinic benzocyclobutene polymers and processes for the preparation thereof |
WO2002019420A2 (en) * | 2000-08-31 | 2002-03-07 | Georgia Tech Research Corporation | Fabrication of semiconductor devices with air gaps for ultra low capacitance interconnection structures |
WO2002019416A1 (en) * | 2000-09-01 | 2002-03-07 | Koninklijke Philips Electronics N.V. | Method of manufacturing a semiconductor device having a porous dielectric layer and air gaps |
Also Published As
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AU2003233470A8 (en) | 2003-10-20 |
JP2005522049A (en) | 2005-07-21 |
AU2003233470A1 (en) | 2003-10-20 |
EP1493183A2 (en) | 2005-01-05 |
US6946382B2 (en) | 2005-09-20 |
EP1493183B1 (en) | 2012-12-05 |
US20050124172A1 (en) | 2005-06-09 |
WO2003085719A2 (en) | 2003-10-16 |
JP4531400B2 (en) | 2010-08-25 |
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