WO2003087936A1 - Method of treatment of porous dielectric films to reduce damage during cleaning - Google Patents
Method of treatment of porous dielectric films to reduce damage during cleaning Download PDFInfo
- Publication number
- WO2003087936A1 WO2003087936A1 PCT/US2003/011012 US0311012W WO03087936A1 WO 2003087936 A1 WO2003087936 A1 WO 2003087936A1 US 0311012 W US0311012 W US 0311012W WO 03087936 A1 WO03087936 A1 WO 03087936A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- supercritical
- dielectric material
- low
- dielectric
- solvent
- Prior art date
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B7/00—Cleaning by methods not provided for in a single other subclass or a single group in this subclass
- B08B7/0021—Cleaning by methods not provided for in a single other subclass or a single group in this subclass by liquid gases or supercritical fluids
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
- H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
- H01L21/02343—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment treatment by exposure to a liquid
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/16—Coating processes; Apparatus therefor
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C15/00—Surface treatment of glass, not in the form of fibres or filaments, by etching
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C17/00—Surface treatment of glass, not in the form of fibres or filaments, by coating
- C03C17/28—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material
- C03C17/30—Surface treatment of glass, not in the form of fibres or filaments, by coating with organic material with silicon-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C23/00—Other surface treatment of glass not in the form of fibres or filaments
- C03C23/0075—Cleaning of glass
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/26—Processing photosensitive materials; Apparatus therefor
- G03F7/42—Stripping or agents therefor
- G03F7/422—Stripping or agents therefor using liquids only
- G03F7/423—Stripping or agents therefor using liquids only containing mineral acids or salts thereof, containing mineral oxidizing substances, e.g. peroxy compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02203—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being porous
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
- H01L21/31116—Etching inorganic layers by chemical means by dry-etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02126—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC
- H01L21/02131—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material containing Si, O, and at least one of H, N, C, F, or other non-metal elements, e.g. SiOC, SiOC:H or SiONC the material being halogen doped silicon oxides, e.g. FSG
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02123—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon
- H01L21/02164—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing silicon the material being a silicon oxide, e.g. SiO2
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003226048A AU2003226048A1 (en) | 2002-04-12 | 2003-04-11 | Method of treatment of porous dielectric films to reduce damage during cleaning |
EP03746699A EP1495366A1 (en) | 2002-04-12 | 2003-04-11 | Method of treatment of porous dielectric films to reduce damage during cleaning |
JP2003584818A JP4424998B2 (en) | 2002-04-12 | 2003-04-11 | Method of reducing damage during cleaning of porous dielectric film |
KR1020047016321A KR100969027B1 (en) | 2002-04-12 | 2003-04-11 | Method of treatment of porous dielectric films to reduce damage during cleaning |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US37282202P | 2002-04-12 | 2002-04-12 | |
US60/372,822 | 2002-04-12 |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2003087936A1 true WO2003087936A1 (en) | 2003-10-23 |
Family
ID=29250913
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/011012 WO2003087936A1 (en) | 2002-04-12 | 2003-04-11 | Method of treatment of porous dielectric films to reduce damage during cleaning |
Country Status (7)
Country | Link |
---|---|
EP (1) | EP1495366A1 (en) |
JP (1) | JP4424998B2 (en) |
KR (1) | KR100969027B1 (en) |
CN (2) | CN100335969C (en) |
AU (1) | AU2003226048A1 (en) |
TW (1) | TWI272693B (en) |
WO (1) | WO2003087936A1 (en) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2006080429A1 (en) * | 2005-01-27 | 2006-08-03 | Nippon Telegraph And Telephone Corporation | Method for forming resist pattern, supercritical processing liquid for lithography process and method for forming antireflection film |
CN100341136C (en) * | 2004-01-20 | 2007-10-03 | 台湾积体电路制造股份有限公司 | Semiconductor device and forming method for interconnecting structure and copper wiring processing method |
JP2008538013A (en) * | 2005-04-15 | 2008-10-02 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems |
US7977036B2 (en) | 2005-01-27 | 2011-07-12 | Nippon Telegraph And Telephone Corporation | Resist pattern forming method |
US9920286B2 (en) | 2012-06-11 | 2018-03-20 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning liquid for lithography and method for forming wiring |
Families Citing this family (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100969027B1 (en) * | 2002-04-12 | 2010-07-09 | 도쿄엘렉트론가부시키가이샤 | Method of treatment of porous dielectric films to reduce damage during cleaning |
US7008853B1 (en) * | 2005-02-25 | 2006-03-07 | Infineon Technologies, Ag | Method and system for fabricating free-standing nanostructures |
JP5247999B2 (en) * | 2005-09-29 | 2013-07-24 | 東京エレクトロン株式会社 | Substrate processing method and computer-readable storage medium |
US7658802B2 (en) * | 2005-11-22 | 2010-02-09 | Applied Materials, Inc. | Apparatus and a method for cleaning a dielectric film |
US7807219B2 (en) * | 2006-06-27 | 2010-10-05 | Lam Research Corporation | Repairing and restoring strength of etch-damaged low-k dielectric materials |
JP5173396B2 (en) * | 2007-12-25 | 2013-04-03 | 大陽日酸株式会社 | Insulation film damage recovery method |
KR20200015279A (en) | 2018-08-03 | 2020-02-12 | 삼성전자주식회사 | Method for forming nanocrystalline graphene and device including the same |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020001929A1 (en) * | 2000-04-25 | 2002-01-03 | Biberger Maximilian A. | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
US6500605B1 (en) * | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
US20030036023A1 (en) * | 2000-12-12 | 2003-02-20 | Moreau Wayne M. | Supercritical fluid(SCF) silylation process |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5185296A (en) * | 1988-07-26 | 1993-02-09 | Matsushita Electric Industrial Co., Ltd. | Method for forming a dielectric thin film or its pattern of high accuracy on a substrate |
GB2262465A (en) * | 1991-12-16 | 1993-06-23 | Secr Defence | Casting of aluminium-lithium alloys |
US5479727A (en) * | 1994-10-25 | 1996-01-02 | Air Products And Chemicals, Inc. | Moisture removal and passivation of surfaces |
KR100969027B1 (en) * | 2002-04-12 | 2010-07-09 | 도쿄엘렉트론가부시키가이샤 | Method of treatment of porous dielectric films to reduce damage during cleaning |
-
2003
- 2003-04-11 KR KR1020047016321A patent/KR100969027B1/en not_active IP Right Cessation
- 2003-04-11 AU AU2003226048A patent/AU2003226048A1/en not_active Abandoned
- 2003-04-11 CN CNB038081466A patent/CN100335969C/en not_active Withdrawn - After Issue
- 2003-04-11 JP JP2003584818A patent/JP4424998B2/en not_active Expired - Fee Related
- 2003-04-11 CN CN2007100083254A patent/CN101005024B/en not_active Expired - Fee Related
- 2003-04-11 EP EP03746699A patent/EP1495366A1/en not_active Withdrawn
- 2003-04-11 WO PCT/US2003/011012 patent/WO2003087936A1/en active Application Filing
- 2003-04-14 TW TW092108563A patent/TWI272693B/en not_active IP Right Cessation
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6500605B1 (en) * | 1997-05-27 | 2002-12-31 | Tokyo Electron Limited | Removal of photoresist and residue from substrate using supercritical carbon dioxide process |
US20020001929A1 (en) * | 2000-04-25 | 2002-01-03 | Biberger Maximilian A. | Method of depositing metal film and metal deposition cluster tool including supercritical drying/cleaning module |
US20030036023A1 (en) * | 2000-12-12 | 2003-02-20 | Moreau Wayne M. | Supercritical fluid(SCF) silylation process |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN100341136C (en) * | 2004-01-20 | 2007-10-03 | 台湾积体电路制造股份有限公司 | Semiconductor device and forming method for interconnecting structure and copper wiring processing method |
WO2006080429A1 (en) * | 2005-01-27 | 2006-08-03 | Nippon Telegraph And Telephone Corporation | Method for forming resist pattern, supercritical processing liquid for lithography process and method for forming antireflection film |
JP2006208735A (en) * | 2005-01-27 | 2006-08-10 | Nippon Telegr & Teleph Corp <Ntt> | Resist pattern forming method, supercritical processing liquid for lithography process and antireflection film forming method |
JP4555698B2 (en) * | 2005-01-27 | 2010-10-06 | 日本電信電話株式会社 | Resist pattern forming method |
US7977036B2 (en) | 2005-01-27 | 2011-07-12 | Nippon Telegraph And Telephone Corporation | Resist pattern forming method |
US8026047B2 (en) | 2005-01-27 | 2011-09-27 | Nippon Telegraph And Telephone Corporation | Resist pattern forming method, supercritical processing solution for lithography process, and antireflection film forming method |
JP2008538013A (en) * | 2005-04-15 | 2008-10-02 | アドバンスド テクノロジー マテリアルズ,インコーポレイテッド | Removal of high-dose ion-implanted photoresist using self-assembled monolayers in solvent systems |
US9920286B2 (en) | 2012-06-11 | 2018-03-20 | Tokyo Ohka Kogyo Co., Ltd. | Cleaning liquid for lithography and method for forming wiring |
Also Published As
Publication number | Publication date |
---|---|
CN1646990A (en) | 2005-07-27 |
TW200308051A (en) | 2003-12-16 |
AU2003226048A1 (en) | 2003-10-27 |
KR100969027B1 (en) | 2010-07-09 |
JP4424998B2 (en) | 2010-03-03 |
CN101005024B (en) | 2011-06-08 |
CN101005024A (en) | 2007-07-25 |
TWI272693B (en) | 2007-02-01 |
KR20040111507A (en) | 2004-12-31 |
JP2005522737A (en) | 2005-07-28 |
EP1495366A1 (en) | 2005-01-12 |
CN100335969C (en) | 2007-09-05 |
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