WO2003088334A3 - Deposition of gate metallization and passivation layers for active matrix liquid crystal display (amlcd) applications - Google Patents

Deposition of gate metallization and passivation layers for active matrix liquid crystal display (amlcd) applications Download PDF

Info

Publication number
WO2003088334A3
WO2003088334A3 PCT/US2003/010928 US0310928W WO03088334A3 WO 2003088334 A3 WO2003088334 A3 WO 2003088334A3 US 0310928 W US0310928 W US 0310928W WO 03088334 A3 WO03088334 A3 WO 03088334A3
Authority
WO
WIPO (PCT)
Prior art keywords
applications
amlcd
deposition
liquid crystal
crystal display
Prior art date
Application number
PCT/US2003/010928
Other languages
French (fr)
Other versions
WO2003088334A2 (en
Inventor
Kam S Law
Quan Yuan Shang
William Reid Harshbarger
Dan Maydan
Original Assignee
Applied Materials Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/118,864 external-priority patent/US6869838B2/en
Priority claimed from US10/119,631 external-priority patent/US20030194825A1/en
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Publication of WO2003088334A2 publication Critical patent/WO2003088334A2/en
Publication of WO2003088334A3 publication Critical patent/WO2003088334A3/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
    • H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
    • H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System
    • H01L21/28556—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic System by chemical means, e.g. CVD, LPCVD, PECVD, laser CVD
    • H01L21/28562—Selective deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66757—Lateral single gate single channel transistors with non-inverted structure, i.e. the channel layer is formed before the gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66742—Thin film unipolar transistors
    • H01L29/6675—Amorphous silicon or polysilicon transistors
    • H01L29/66765—Lateral single gate single channel transistors with inverted structure, i.e. the channel layer is formed after the gate

Abstract

A method of gate metal layer deposition and a method of passivation layer deposition using a cyclical deposition process for thin film transistor applications is described. The cyclical deposition process comprises alternately adsorbing a metal-containing precursor and a reducing gas on a substrate. In another aspect, the cyclical deposition process comprises alternately adsorbing a silicon-containing precursor and a reactant gas on a substrate. Thin film transistors, such as a bottom-gate transistor or a top-gate transistor,
PCT/US2003/010928 2002-04-09 2003-04-09 Deposition of gate metallization and passivation layers for active matrix liquid crystal display (amlcd) applications WO2003088334A2 (en)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/118,864 US6869838B2 (en) 2002-04-09 2002-04-09 Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications
US10/118,864 2002-04-09
US10/119,631 US20030194825A1 (en) 2002-04-10 2002-04-10 Deposition of gate metallization for active matrix liquid crystal display (AMLCD) applications
US10/119,631 2002-04-10

Publications (2)

Publication Number Publication Date
WO2003088334A2 WO2003088334A2 (en) 2003-10-23
WO2003088334A3 true WO2003088334A3 (en) 2004-04-01

Family

ID=29253948

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/010928 WO2003088334A2 (en) 2002-04-09 2003-04-09 Deposition of gate metallization and passivation layers for active matrix liquid crystal display (amlcd) applications

Country Status (1)

Country Link
WO (1) WO2003088334A2 (en)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2006014591A2 (en) * 2004-07-08 2006-02-09 Itn Energy Systems, Inc. Permeation barriers for flexible electronics

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5480818A (en) * 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
US6270572B1 (en) * 1998-08-07 2001-08-07 Samsung Electronics Co., Ltd. Method for manufacturing thin film using atomic layer deposition

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5480818A (en) * 1992-02-10 1996-01-02 Fujitsu Limited Method for forming a film and method for manufacturing a thin film transistor
US6270572B1 (en) * 1998-08-07 2001-08-07 Samsung Electronics Co., Ltd. Method for manufacturing thin film using atomic layer deposition

Also Published As

Publication number Publication date
WO2003088334A2 (en) 2003-10-23

Similar Documents

Publication Publication Date Title
WO2003088327A3 (en) Deposition of silicon layers for active matrix liquid crystal displays
WO2018196087A1 (en) Array substrate, display apparatus and manufacturing method therefor
US20190204668A1 (en) Array substrate, manufacturing method, display panel and display device
US20140377906A1 (en) Methods for manufacturing thin film transistors
US7332383B2 (en) Switching device for a pixel electrode and methods for fabricating the same
TW200701469A (en) Method for manufacturing thin film transistors
TW200625650A (en) Method of manufacturing a flexible thin film transistor array panel including plastic substrate
TW200802885A (en) Thin film transistor, method for fabricating the same and display device
TW200629563A (en) Thin film transistor array panel and method for manufacturing the same
US8383467B2 (en) Thin film transistor and method of manufacturing the same
CN104600083B (en) Thin-film transistor array base-plate and preparation method thereof, display panel and display device
EP1596428A4 (en) Organic thin-film transistor device and method for manufacturing same
TW200611001A (en) Liquid crystal display device using small molecule organic semiconductor material and method of fabricating the same
US20080197356A1 (en) Thin film transistor substrate and method of manufacturing the same
TW200707756A (en) Semiconductor device with thin-film transistors and method of fabricating the same
US20230274997A1 (en) Nitrogen-rich silicon nitride films for thin film transistors
TW200642088A (en) Thin film transistor, thin film transistor panel, and method of manufacturing the same
CN105140296A (en) Thin film transistor, fabrication method thereof, array substrate and display panel
US5696387A (en) Thin film transistor in a liquid crystal display having a microcrystalline and amorphous active layers with an intrinsic semiconductor layer attached to same
US20180068855A1 (en) Method of Manufacturing Thin Film Transistor
TW200628876A (en) Liquid crystal display
CN104051472A (en) Display device, array substrate and manufacturing method of array substrate
US20060111244A1 (en) Methods for fabricating thin film transistors
WO2003088334A3 (en) Deposition of gate metallization and passivation layers for active matrix liquid crystal display (amlcd) applications
US20090200553A1 (en) High temperature thin film transistor on soda lime glass

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): CN JP KR SG

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR

121 Ep: the epo has been informed by wipo that ep was designated in this application
122 Ep: pct application non-entry in european phase
NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP