WO2003095710A3 - Methods of and apparatus for electrochemically fabricating structures - Google Patents

Methods of and apparatus for electrochemically fabricating structures Download PDF

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Publication number
WO2003095710A3
WO2003095710A3 PCT/US2003/014860 US0314860W WO03095710A3 WO 2003095710 A3 WO2003095710 A3 WO 2003095710A3 US 0314860 W US0314860 W US 0314860W WO 03095710 A3 WO03095710 A3 WO 03095710A3
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WO
WIPO (PCT)
Prior art keywords
layers
depositions
operations
depositing
association
Prior art date
Application number
PCT/US2003/014860
Other languages
French (fr)
Other versions
WO2003095710A2 (en
Inventor
Dennis R Smalley
Original Assignee
Memgen Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Memgen Corp filed Critical Memgen Corp
Priority to AU2003234397A priority Critical patent/AU2003234397A1/en
Publication of WO2003095710A2 publication Critical patent/WO2003095710A2/en
Publication of WO2003095710A3 publication Critical patent/WO2003095710A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D5/00—Electroplating characterised by the process; Pretreatment or after-treatment of workpieces
    • C25D5/02—Electroplating of selected surface areas
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y10/00—Processes of additive manufacturing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y50/00—Data acquisition or data processing for additive manufacturing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B33—ADDITIVE MANUFACTURING TECHNOLOGY
    • B33Y—ADDITIVE MANUFACTURING, i.e. MANUFACTURING OF THREE-DIMENSIONAL [3-D] OBJECTS BY ADDITIVE DEPOSITION, ADDITIVE AGGLOMERATION OR ADDITIVE LAYERING, e.g. BY 3-D PRINTING, STEREOLITHOGRAPHY OR SELECTIVE LASER SINTERING
    • B33Y50/00—Data acquisition or data processing for additive manufacturing
    • B33Y50/02—Data acquisition or data processing for additive manufacturing for controlling or regulating additive manufacturing processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
    • B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
    • B81C1/00126—Static structures not provided for in groups B81C1/00031 - B81C1/00119
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
    • B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
    • B81C1/00349—Creating layers of material on a substrate
    • B81C1/0038—Processes for creating layers of materials not provided for in groups B81C1/00357 - B81C1/00373
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1603—Process or apparatus coating on selected surface areas
    • C23C18/1605—Process or apparatus coating on selected surface areas by masking
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1651—Two or more layers only obtained by electroless plating
    • C—CHEMISTRY; METALLURGY
    • C25—ELECTROLYTIC OR ELECTROPHORETIC PROCESSES; APPARATUS THEREFOR
    • C25D—PROCESSES FOR THE ELECTROLYTIC OR ELECTROPHORETIC PRODUCTION OF COATINGS; ELECTROFORMING; APPARATUS THEREFOR
    • C25D1/00—Electroforming
    • C25D1/003—3D structures, e.g. superposed patterned layers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/0802—Details
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01P—MEASURING LINEAR OR ANGULAR SPEED, ACCELERATION, DECELERATION, OR SHOCK; INDICATING PRESENCE, ABSENCE, OR DIRECTION, OF MOVEMENT
    • G01P15/00—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration
    • G01P15/02—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses
    • G01P15/08—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values
    • G01P15/125—Measuring acceleration; Measuring deceleration; Measuring shock, i.e. sudden change of acceleration by making use of inertia forces using solid seismic masses with conversion into electric or magnetic values by capacitive pick-up
    • G—PHYSICS
    • G06—COMPUTING; CALCULATING OR COUNTING
    • G06F—ELECTRIC DIGITAL DATA PROCESSING
    • G06F30/00—Computer-aided design [CAD]
    • G06F30/30—Circuit design
    • G06F30/39—Circuit design at the physical level
    • G06F30/392—Floor-planning or layout, e.g. partitioning or placement
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76838—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the conductors
    • H01L21/76885—By forming conductive members before deposition of protective insulating material, e.g. pillars, studs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P1/00—Auxiliary devices
    • H01P1/20—Frequency-selective devices, e.g. filters
    • H01P1/201—Filters for transverse electromagnetic waves
    • H01P1/202—Coaxial filters
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P11/00—Apparatus or processes specially adapted for manufacturing waveguides or resonators, lines, or other devices of the waveguide type
    • H01P11/001—Manufacturing waveguides or transmission lines of the waveguide type
    • H01P11/005—Manufacturing coaxial lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P3/00—Waveguides; Transmission lines of the waveguide type
    • H01P3/02—Waveguides; Transmission lines of the waveguide type with two longitudinal conductors
    • H01P3/06—Coaxial lines
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01P—WAVEGUIDES; RESONATORS, LINES, OR OTHER DEVICES OF THE WAVEGUIDE TYPE
    • H01P5/00—Coupling devices of the waveguide type
    • H01P5/12—Coupling devices having more than two ports
    • H01P5/16—Conjugate devices, i.e. devices having at least one port decoupled from one other port
    • H01P5/18—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers
    • H01P5/183—Conjugate devices, i.e. devices having at least one port decoupled from one other port consisting of two coupled guides, e.g. directional couplers at least one of the guides being a coaxial line
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B81—MICROSTRUCTURAL TECHNOLOGY
    • B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
    • B81B2201/00—Specific applications of microelectromechanical systems
    • B81B2201/04—Optical MEMS
    • B81B2201/042—Micromirrors, not used as optical switches
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
    • H05K3/00—Apparatus or processes for manufacturing printed circuits
    • H05K3/46—Manufacturing multilayer circuits
    • H05K3/4644—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits
    • H05K3/4647—Manufacturing multilayer circuits by building the multilayer layer by layer, i.e. build-up multilayer circuits by applying an insulating layer around previously made via studs

Abstract

Multi-layer structures are electrochemically fabricated by depositing a first material, selectively etching the first material (e.g. via a mask), depositing a second material to fill in the voids created by the etching, and then planarizing the depositions so as to bound the layer being created and thereafter adding additional layers to previously formed layers. The first and second depositions may be of the blanket or selective type. The repetition of the formation process for forming successive layers may be repeated with or without variations (e.g. variations in: patterns; numbers or existence of or parameters associated with depositions, etchings, and or planarization operations; the order of operations, or the materials deposited). Other embodiments form multi-layer structures using operations that interlace material deposited in association with some layers with material deposited in association with other layers.
PCT/US2003/014860 2002-05-07 2003-05-07 Methods of and apparatus for electrochemically fabricating structures WO2003095710A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003234397A AU2003234397A1 (en) 2002-05-07 2003-05-07 Methods of and apparatus for electrochemically fabricating structures

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US37913002P 2002-05-07 2002-05-07
US60/379,130 2002-05-07

Publications (2)

Publication Number Publication Date
WO2003095710A2 WO2003095710A2 (en) 2003-11-20
WO2003095710A3 true WO2003095710A3 (en) 2005-08-18

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Family Applications (1)

Application Number Title Priority Date Filing Date
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US (5) US7252861B2 (en)
AU (1) AU2003234397A1 (en)
WO (1) WO2003095710A2 (en)

Families Citing this family (107)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7410606B2 (en) 2001-06-05 2008-08-12 Appleby Michael P Methods for manufacturing three-dimensional devices and devices created thereby
US7785098B1 (en) 2001-06-05 2010-08-31 Mikro Systems, Inc. Systems for large area micro mechanical systems
US7141812B2 (en) 2002-06-05 2006-11-28 Mikro Systems, Inc. Devices, methods, and systems involving castings
US7674361B2 (en) 2003-09-24 2010-03-09 Microfabrica Inc. Micro-turbines, roller bearings, bushings, and design of hollow closed structures and fabrication methods for creating such structures
US20050032375A1 (en) * 2003-05-07 2005-02-10 Microfabrica Inc. Methods for electrochemically fabricating structures using adhered masks, incorporating dielectric sheets, and/or seed layers that are partially removed via planarization
US20080121343A1 (en) 2003-12-31 2008-05-29 Microfabrica Inc. Electrochemical Fabrication Methods Incorporating Dielectric Materials and/or Using Dielectric Substrates
US7498714B2 (en) * 2003-09-24 2009-03-03 Microfabrica Inc. Multi-layer three-dimensional structures having features smaller than a minimum feature size associated with the formation of individual layers
US20070158200A1 (en) * 2002-10-29 2007-07-12 Microfabrica Inc. Electrochemical fabrication processes incorporating non-platable metals and/or metals that are difficult to plate on
US20050194348A1 (en) * 2001-12-03 2005-09-08 University Of Southern California Electrochemical fabrication methods incorporating dielectric materials and/or using dielectric substrates
US7372616B2 (en) * 2001-12-06 2008-05-13 Microfabrica, Inc. Complex microdevices and apparatus and methods for fabricating such devices
US20080050524A1 (en) 2006-04-07 2008-02-28 Microfabrica Inc. Methods of Forming Three-Dimensional Structures Having Reduced Stress and/or Curvature
US8070931B1 (en) 2002-05-07 2011-12-06 Microfabrica Inc. Electrochemical fabrication method including elastic joining of structures
US7265565B2 (en) 2003-02-04 2007-09-04 Microfabrica Inc. Cantilever microprobes for contacting electronic components and methods for making such probes
AU2003228974A1 (en) * 2002-05-07 2003-11-11 Memgen Corporation Method of and apparatus for forming three-dimensional structures
US7250101B2 (en) 2002-05-07 2007-07-31 Microfabrica Inc. Electrochemically fabricated structures having dielectric or active bases and methods of and apparatus for producing such structures
US20050104609A1 (en) * 2003-02-04 2005-05-19 Microfabrica Inc. Microprobe tips and methods for making
US20060006888A1 (en) * 2003-02-04 2006-01-12 Microfabrica Inc. Electrochemically fabricated microprobes
US7531077B2 (en) 2003-02-04 2009-05-12 Microfabrica Inc. Electrochemical fabrication process for forming multilayer multimaterial microprobe structures
US20060051948A1 (en) * 2003-02-04 2006-03-09 Microfabrica Inc. Microprobe tips and methods for making
US20050184748A1 (en) * 2003-02-04 2005-08-25 Microfabrica Inc. Pin-type probes for contacting electronic circuits and methods for making such probes
US7273812B2 (en) * 2002-05-07 2007-09-25 Microfabrica Inc. Microprobe tips and methods for making
AU2003234397A1 (en) 2002-05-07 2003-11-11 Memgen Corporation Methods of and apparatus for electrochemically fabricating structures
US9919472B1 (en) 2002-05-07 2018-03-20 Microfabrica Inc. Stacking and bonding methods for forming multi-layer, three-dimensional, millimeter scale and microscale structures
US20060108678A1 (en) * 2002-05-07 2006-05-25 Microfabrica Inc. Probe arrays and method for making
US7363705B2 (en) * 2003-02-04 2008-04-29 Microfabrica, Inc. Method of making a contact
US20070045121A1 (en) * 2002-05-07 2007-03-01 Microfabrica Inc. Electrochemically fabricated hermetically sealed microstructures and methods of and apparatus for producing such structures
US20060053625A1 (en) * 2002-05-07 2006-03-16 Microfabrica Inc. Microprobe tips and methods for making
WO2003095712A2 (en) * 2002-05-07 2003-11-20 University Of Southern California Method of and apparatus for forming three-dimensional structures integral with semiconductor based circuitry
US7384530B2 (en) * 2002-05-07 2008-06-10 Microfabrica Inc. Methods for electrochemically fabricating multi-layer structures including regions incorporating maskless, patterned, multiple layer thickness depositions of selected materials
US7640651B2 (en) * 2003-12-31 2010-01-05 Microfabrica Inc. Fabrication process for co-fabricating multilayer probe array and a space transformer
US20050142739A1 (en) * 2002-05-07 2005-06-30 Microfabrica Inc. Probe arrays and method for making
US20050067292A1 (en) * 2002-05-07 2005-03-31 Microfabrica Inc. Electrochemically fabricated structures having dielectric or active bases and methods of and apparatus for producing such structures
US7412767B2 (en) 2003-02-04 2008-08-19 Microfabrica, Inc. Microprobe tips and methods for making
US20100094320A1 (en) * 2002-10-29 2010-04-15 Microfabrica Inc. Atherectomy and Thrombectomy Devices, Methods for Making, and Procedures for Using
US20110092988A1 (en) * 2002-10-29 2011-04-21 Microfabrica Inc. Microdevices for Tissue Approximation and Retention, Methods for Using, and Methods for Making
US8454652B1 (en) 2002-10-29 2013-06-04 Adam L. Cohen Releasable tissue anchoring device, methods for using, and methods for making
US10416192B2 (en) 2003-02-04 2019-09-17 Microfabrica Inc. Cantilever microprobes for contacting electronic components
US9244101B2 (en) * 2003-02-04 2016-01-26 University Of Southern California Electrochemical fabrication process for forming multilayer multimaterial microprobe structures
US20080106280A1 (en) * 2003-02-04 2008-05-08 Microfabrica Inc. Vertical Microprobes for Contacting Electronic Components and Method for Making Such Probes
US8613846B2 (en) * 2003-02-04 2013-12-24 Microfabrica Inc. Multi-layer, multi-material fabrication methods for producing micro-scale and millimeter-scale devices with enhanced electrical and/or mechanical properties
US20080211524A1 (en) * 2003-02-04 2008-09-04 Microfabrica Inc. Electrochemically Fabricated Microprobes
EP2395598B1 (en) 2003-03-04 2018-08-22 Nuvotronics, LLC Coaxial waveguide microstructures and methods of formation
US9671429B2 (en) 2003-05-07 2017-06-06 University Of Southern California Multi-layer, multi-material micro-scale and millimeter-scale devices with enhanced electrical and/or mechanical properties
WO2004101855A2 (en) 2003-05-07 2004-11-25 Microfabrica Inc. Electrochemical fabrication methods including use of surface treatments to reduce overplating and/or planarization during formation of multi-layer three-dimensional structures
US10297421B1 (en) 2003-05-07 2019-05-21 Microfabrica Inc. Plasma etching of dielectric sacrificial material from reentrant multi-layer metal structures
US10641792B2 (en) 2003-12-31 2020-05-05 University Of Southern California Multi-layer, multi-material micro-scale and millimeter-scale devices with enhanced electrical and/or mechanical properties
US20080105355A1 (en) * 2003-12-31 2008-05-08 Microfabrica Inc. Probe Arrays and Method for Making
US20090020433A1 (en) * 2003-12-31 2009-01-22 Microfabrica Inc. Electrochemical Fabrication Methods for Producing Multilayer Structures Including the use of Diamond Machining in the Planarization of Deposits of Material
WO2005065430A2 (en) 2003-12-31 2005-07-21 Microfabrica Inc. Electrochemical fabrication methods for producing multilayer structures including the use of diamond machining in the planarization of deposits of material
US20080108221A1 (en) * 2003-12-31 2008-05-08 Microfabrica Inc. Microprobe Tips and Methods for Making
US7335463B2 (en) * 2004-12-16 2008-02-26 Palo Alto Research Center, Inc. Electroplated three dimensional ink jet manifold and nozzle structures using successive lithography and electroplated sacrificial layers
US7169649B2 (en) * 2004-12-16 2007-01-30 Palo Alto Research Center, Inc. Wafer scale integration of electroplated 3D structures using successive lithography, electroplated sacrificial layers, and flip-chip bonding
US8216931B2 (en) * 2005-03-31 2012-07-10 Gang Zhang Methods for forming multi-layer three-dimensional structures
US7696102B2 (en) * 2005-03-31 2010-04-13 Gang Zhang Methods for fabrication of three-dimensional structures
WO2007117346A2 (en) * 2006-01-26 2007-10-18 California Institute Of Technology Programming microfluidic devices with molecular information
US20080116584A1 (en) * 2006-11-21 2008-05-22 Arkalgud Sitaram Self-aligned through vias for chip stacking
JP2008188755A (en) * 2006-12-30 2008-08-21 Rohm & Haas Electronic Materials Llc Three-dimensional microstructures and their formation method
US20080176138A1 (en) * 2007-01-19 2008-07-24 Park Benjamin Y Carbon electrodes for electrochemical applications
JP5492571B2 (en) * 2007-02-20 2014-05-14 クォルコム・メムズ・テクノロジーズ・インコーポレーテッド Apparatus and method for performing MEMS etching
KR101472134B1 (en) 2007-03-20 2014-12-15 누보트로닉스, 엘.엘.씨 Coaxial transmission line microstructures and methods of formation thereof
EP3104450A3 (en) 2007-03-20 2016-12-28 Nuvotronics, LLC Integrated electronic components and methods of formation thereof
KR20100061731A (en) * 2007-09-14 2010-06-08 퀄컴 엠이엠스 테크놀로지스, 인크. Etching processes used in mems production
GB0719747D0 (en) * 2007-10-10 2007-11-21 Materialise Nv Method and apparatus for automatic support generation for an object made by means of a rapid prototype production method
US7863079B2 (en) 2008-02-05 2011-01-04 Qualcomm Mems Technologies, Inc. Methods of reducing CD loss in a microelectromechanical device
US8319149B2 (en) * 2008-04-16 2012-11-27 Applied Materials, Inc. Radiant anneal throughput optimization and thermal history minimization by interlacing
US8404600B2 (en) * 2008-06-17 2013-03-26 Micron Technology, Inc. Method for forming fine pitch structures
US9814484B2 (en) 2012-11-29 2017-11-14 Microfabrica Inc. Micro debrider devices and methods of tissue removal
WO2010151251A1 (en) 2008-06-23 2010-12-29 Microfabrica Inc. Miniature shredding tool for use in medical applications and methods for making
US8795278B2 (en) 2008-06-23 2014-08-05 Microfabrica Inc. Selective tissue removal tool for use in medical applications and methods for making and using
US9451977B2 (en) 2008-06-23 2016-09-27 Microfabrica Inc. MEMS micro debrider devices and methods of tissue removal
US10939934B2 (en) 2008-06-23 2021-03-09 Microfabrica Inc. Miniature shredding tools for use in medical applications, methods for making, and procedures for using
US8414607B1 (en) 2008-06-23 2013-04-09 Microfabrica Inc. Miniature shredding tool for use in medical applications and methods for making
EP2559534B1 (en) 2008-09-26 2023-10-25 Raytheon Technologies Corporation Composition and method for casting manufacturing
US9441661B2 (en) 2008-12-31 2016-09-13 Microfabrica Inc. Microscale and millimeter scale devices including threaded elements, methods for designing, and methods for making
US8659371B2 (en) * 2009-03-03 2014-02-25 Bae Systems Information And Electronic Systems Integration Inc. Three-dimensional matrix structure for defining a coaxial transmission line channel
US8262916B1 (en) 2009-06-30 2012-09-11 Microfabrica Inc. Enhanced methods for at least partial in situ release of sacrificial material from cavities or channels and/or sealing of etching holes during fabrication of multi-layer microscale or millimeter-scale complex three-dimensional structures
US20120191121A1 (en) 2009-08-18 2012-07-26 Chen Richard T Concentric cutting devices for use in minimally invasive medical procedures
US20110123783A1 (en) 2009-11-23 2011-05-26 David Sherrer Multilayer build processses and devices thereof
US8917150B2 (en) * 2010-01-22 2014-12-23 Nuvotronics, Llc Waveguide balun having waveguide structures disposed over a ground plane and having probes located in channels
WO2011091334A2 (en) * 2010-01-22 2011-07-28 Nuvotronics, Llc Thermal management
FR2960339B1 (en) * 2010-05-18 2012-05-18 Commissariat Energie Atomique METHOD FOR PRODUCING CHIP ELEMENTS WITH WIRE INSERTION GROOVES
US8866300B1 (en) 2011-06-05 2014-10-21 Nuvotronics, Llc Devices and methods for solder flow control in three-dimensional microstructures
US8814601B1 (en) 2011-06-06 2014-08-26 Nuvotronics, Llc Batch fabricated microconnectors
EP2731783A4 (en) 2011-07-13 2016-03-09 Nuvotronics Llc Methods of fabricating electronic and mechanical structures
US8813824B2 (en) 2011-12-06 2014-08-26 Mikro Systems, Inc. Systems, devices, and/or methods for producing holes
WO2014113508A2 (en) 2013-01-15 2014-07-24 Microfabrica Inc. Methods of forming parts using laser machining
US9325044B2 (en) 2013-01-26 2016-04-26 Nuvotronics, Inc. Multi-layer digital elliptic filter and method
US9306254B1 (en) 2013-03-15 2016-04-05 Nuvotronics, Inc. Substrate-free mechanical interconnection of electronic sub-systems using a spring configuration
US9306255B1 (en) 2013-03-15 2016-04-05 Nuvotronics, Inc. Microstructure including microstructural waveguide elements and/or IC chips that are mechanically interconnected to each other
EP3003722B1 (en) 2013-05-31 2019-10-23 Hewlett-Packard Development Company, L.P. Modifying a base layer of an object
EP3022064A4 (en) 2013-07-16 2017-06-07 Microfabrica Inc. Counterfeiting deterent and security devices systems and methods
JP6535347B2 (en) 2014-01-17 2019-06-26 ヌボトロニクス、インク． Wafer-scale test interface unit: Low loss and high isolation equipment and methods for high speed and high density mixed signal interconnects and contactors
US10847469B2 (en) 2016-04-26 2020-11-24 Cubic Corporation CTE compensation for wafer-level and chip-scale packages and assemblies
WO2016094129A1 (en) 2014-12-03 2016-06-16 Nuvotronics, Inc. Systems and methods for manufacturing stacked circuits and transmission lines
US9905471B2 (en) * 2016-04-28 2018-02-27 Taiwan Semiconductor Manufacturing Co., Ltd. Integrated circuit structure and method forming trenches with different depths
US10319654B1 (en) 2017-12-01 2019-06-11 Cubic Corporation Integrated chip scale packages
US10961967B1 (en) 2017-12-12 2021-03-30 Microfabrica Inc. Fuel injector systems, fuel injectors, fuel injector nozzles, and methods for making fuel injector nozzles
US11262383B1 (en) 2018-09-26 2022-03-01 Microfabrica Inc. Probes having improved mechanical and/or electrical properties for making contact between electronic circuit elements and methods for making
US11802891B1 (en) 2019-12-31 2023-10-31 Microfabrica Inc. Compliant pin probes with multiple spring segments and compression spring deflection stabilization structures, methods for making, and methods for using
WO2023196427A1 (en) 2022-04-06 2023-10-12 Microfabrica Inc. Probes with planar unbiased spring elements for electronic component contact, methods for making such probes, and methods for using such probes
WO2023196425A1 (en) 2022-04-06 2023-10-12 Microfabrica Inc. Probes with planar unbiased spring elements for electronic component contact, methods for making such probes, and methods for using such probes
WO2023196431A1 (en) 2022-04-06 2023-10-12 Microfabrica Inc. Probes with planar unbiased spring elements for electronic component contact, methods for making such probes, and methods for using such probes
WO2023196438A1 (en) 2022-04-07 2023-10-12 Microfabrica Inc. Probes with planar unbiased spring elements for electronic component contact, methods for making such probes, and methods for using such probes
WO2023196428A1 (en) 2022-04-07 2023-10-12 Microfabrica Inc. Probes with planar unbiased spring elements for electronic component contact, methods for making such probes, and methods for using such probes
WO2023196436A1 (en) 2022-04-08 2023-10-12 Microfabrica Inc. Probes with planar unbiased spring elements for electronic component contact, methods for making such probes, and methods for using such probes
WO2023211659A1 (en) 2022-04-28 2023-11-02 Microfabrica Inc. Probes with planar unbiased spring elements for electronic component contact, methods for making such probes, and methods for using such probes
WO2024006446A1 (en) 2022-06-30 2024-01-04 Microfabrica Inc. Compliant pin probes with extension springs or spring segments and ratcheting elements

Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0567332A2 (en) * 1992-04-24 1993-10-27 Wisconsin Alumni Research Foundation Formation of microstructures by multiple level deep X-ray lithography with sacrificial metal layers
US5824374A (en) * 1996-07-22 1998-10-20 Optical Coating Laboratory, Inc. In-situ laser patterning of thin film layers during sequential depositing
US20010014409A1 (en) * 1997-04-04 2001-08-16 Cohen Adam L. Article, method, and apparatus for electrochemical fabrication
US6287968B1 (en) * 1999-01-04 2001-09-11 Advanced Micro Devices, Inc. Method of defining copper seed layer for selective electroless plating processing
US20010024872A1 (en) * 2000-03-14 2001-09-27 Toshio Miyamoto Semiconductor integrated circuit device and manufacturing method of that
US20020020628A1 (en) * 2000-08-10 2002-02-21 Basol Bulent M. Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an indirect external influence
US6355147B1 (en) * 1999-12-10 2002-03-12 Sandia Corporation Porous electrode apparatus for electrodeposition of detailed metal structures or microelectronic interconnections

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3620933A (en) * 1969-12-31 1971-11-16 Macdermid Inc Forming plastic parts having surfaces receptive to adherent coatings
JP3269827B2 (en) * 1997-04-04 2002-04-02 ユニバーシティ・オブ・サザン・カリフォルニア Articles, methods and apparatus for electrochemical manufacturing
US5945058A (en) * 1997-05-13 1999-08-31 3D Systems, Inc. Method and apparatus for identifying surface features associated with selected lamina of a three-dimensional object being stereolithographically formed
US6197181B1 (en) * 1998-03-20 2001-03-06 Semitool, Inc. Apparatus and method for electrolytically depositing a metal on a microelectronic workpiece
US6235624B1 (en) * 1998-06-01 2001-05-22 Kabushiki Kaisha Toshiba Paste connection plug, burying method, and semiconductor device manufacturing method
US6740222B2 (en) * 2001-06-07 2004-05-25 Agere Systems Inc. Method of manufacturing a printed wiring board having a discontinuous plating layer
US6562656B1 (en) * 2001-06-25 2003-05-13 Thin Film Module, Inc. Cavity down flip chip BGA
TWI227285B (en) * 2001-10-15 2005-02-01 Univ Southern California Methods of and apparatus for producing a three-dimensional structure
US7259640B2 (en) 2001-12-03 2007-08-21 Microfabrica Miniature RF and microwave components and methods for fabricating such components
US7239219B2 (en) * 2001-12-03 2007-07-03 Microfabrica Inc. Miniature RF and microwave components and methods for fabricating such components
US7372616B2 (en) * 2001-12-06 2008-05-13 Microfabrica, Inc. Complex microdevices and apparatus and methods for fabricating such devices
US20030221968A1 (en) 2002-03-13 2003-12-04 Memgen Corporation Electrochemical fabrication method and apparatus for producing three-dimensional structures having improved surface finish
US6946410B2 (en) * 2002-04-05 2005-09-20 E. I. Du Pont De Nemours And Company Method for providing nano-structures of uniform length
US7229542B2 (en) 2002-05-07 2007-06-12 Microfabrica Inc. Methods of and apparatus for molding structures using sacrificial metal patterns
US7250101B2 (en) 2002-05-07 2007-07-31 Microfabrica Inc. Electrochemically fabricated structures having dielectric or active bases and methods of and apparatus for producing such structures
US7384530B2 (en) * 2002-05-07 2008-06-10 Microfabrica Inc. Methods for electrochemically fabricating multi-layer structures including regions incorporating maskless, patterned, multiple layer thickness depositions of selected materials
AU2003228974A1 (en) 2002-05-07 2003-11-11 Memgen Corporation Method of and apparatus for forming three-dimensional structures
WO2003095709A2 (en) * 2002-05-07 2003-11-20 Memgen Corporation Multistep release method for electrochemically fabricated structures
US20040065550A1 (en) * 2002-05-07 2004-04-08 University Of Southern California Electrochemical fabrication methods with enhanced post deposition processing
CN100582318C (en) 2002-05-07 2010-01-20 南加州大学 Methods and apparatus for monitoring deposition quality during conformable contact mask plating operations
AU2003234397A1 (en) * 2002-05-07 2003-11-11 Memgen Corporation Methods of and apparatus for electrochemically fabricating structures
AU2003228973A1 (en) * 2002-05-07 2003-11-11 Memgen Corporation Electrochemically fabricated hermetically sealed microstructures
WO2003095713A1 (en) * 2002-05-07 2003-11-20 University Of Southern California Conformable contact masking methods and apparatus utilizing in situ cathodic activation of a substrate
US7527721B2 (en) * 2003-05-07 2009-05-05 Microfabrica Inc. Electrochemical fabrication method for producing multi-layer three-dimensional structures on a porous dielectric
US7828592B2 (en) 2008-03-14 2010-11-09 Tyco Electronics Corporation Interface module

Patent Citations (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP0567332A2 (en) * 1992-04-24 1993-10-27 Wisconsin Alumni Research Foundation Formation of microstructures by multiple level deep X-ray lithography with sacrificial metal layers
US5824374A (en) * 1996-07-22 1998-10-20 Optical Coating Laboratory, Inc. In-situ laser patterning of thin film layers during sequential depositing
US20010014409A1 (en) * 1997-04-04 2001-08-16 Cohen Adam L. Article, method, and apparatus for electrochemical fabrication
US6287968B1 (en) * 1999-01-04 2001-09-11 Advanced Micro Devices, Inc. Method of defining copper seed layer for selective electroless plating processing
US6355147B1 (en) * 1999-12-10 2002-03-12 Sandia Corporation Porous electrode apparatus for electrodeposition of detailed metal structures or microelectronic interconnections
US20010024872A1 (en) * 2000-03-14 2001-09-27 Toshio Miyamoto Semiconductor integrated circuit device and manufacturing method of that
US20020020628A1 (en) * 2000-08-10 2002-02-21 Basol Bulent M. Plating method and apparatus that creates a differential between additive disposed on a top surface and a cavity surface of a workpiece using an indirect external influence

Non-Patent Citations (1)

* Cited by examiner, † Cited by third party
Title
COHEN A ET AL: "EFAB: rapid, low-cost desktop micromachining of high aspect ratio true 3-D MEMS", MICRO ELECTRO MECHANICAL SYSTEMS, 1999. MEMS '99. TWELFTH IEEE INTERNATIONAL CONFERENCE ON ORLANDO, FL, USA 17-21 JAN. 1999, PISCATAWAY, NJ, USA,IEEE, US, 17 January 1999 (1999-01-17), pages 244 - 251, XP010321754, ISBN: 0-7803-5194-0 *

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