WO2003100836A1 - Reduced cross-contamination between chambers in a semiconductor processing tool - Google Patents
Reduced cross-contamination between chambers in a semiconductor processing tool Download PDFInfo
- Publication number
- WO2003100836A1 WO2003100836A1 PCT/US2003/015843 US0315843W WO03100836A1 WO 2003100836 A1 WO2003100836 A1 WO 2003100836A1 US 0315843 W US0315843 W US 0315843W WO 03100836 A1 WO03100836 A1 WO 03100836A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- chamber
- gate valve
- transfer chamber
- inert gas
- process chamber
- Prior art date
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Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/677—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations
- H01L21/67739—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber
- H01L21/67748—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for conveying, e.g. between different workstations into and out of processing chamber horizontal transfer of a single workpiece
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S438/00—Semiconductor device manufacturing: process
- Y10S438/907—Continuous processing
- Y10S438/908—Utilizing cluster apparatus
Definitions
- the present invention relates to semiconductor processing tools and, in particular, to methods of minimizing cross-contamination during transport of the wafers between chambers of such tools.
- Cluster tools used in the semiconductor processing of wafers or other workpieces typically comprise a central wafer handling chamber, or transfer chamber, surrounded by a number of process chambers within which various processes are carried out on the wafers (e.g., deposition, etching, doping, annealing and oxidizing).
- a robot is provided in the transfer chamber for moving the wafers within the cluster tool.
- the transfer chamber is typically isolated from each of the process chambers by gate valves. The gate valves can be opened to allow the robot to transfer the wafers between the transfer chamber and the process chambers.
- transfer of wafers between the transfer chamber and the process chambers can be carried out at reduced pressure, thereby eliminating the need to pump down the process chamber after each wafer transfer and increasing wafer throughput. It is important to prevent cross- contamination between the chambers during wafer transfer. Gaseous (homogeneous) cross-contamination takes place when gases from one chamber are convectively or diffusively transported to another chamber, thereby contaminating the other chamber. For example, an oxidizing species used to grow a silicon dioxide or oxynitride film in one process chamber could contaminate another process chamber in which an oxygen-free environment is desired, such as for epitaxial deposition. Additionally, particulate (heterogeneous) particulate can also arise during wafer transfer.
- a method for transporting a workpiece in a semiconductor processing apparatus comprising a transfer chamber, a process chamber, and a gate valve between the transfer chamber and the process chamber.
- the method comprises operating a first pump connected to the transfer chamber to achieve a first pressure in the transfer chamber and operating a second pump connected to the process chamber to achieve a second pressure in the process chamber.
- An inert gas is flowed into the transfer chamber.
- the first pump is isolated from the transfer chamber.
- the gate valve is opened while the first pump is isolated from the transfer chamber and the second pump continues to operate.
- the workpiece is then transferred between the transfer chamber and the process chamber.
- a method for transporting a workpiece in a semiconductor processing apparatus comprising a transfer chamber, a process chamber, and a gate valve between the transfer chamber and the process chamber.
- the method comprises vacuum pumping to achieve a lower pressure in the process chamber than in the transfer chamber.
- An inert gas is flowed into the transfer chamber.
- An inert gas is also flowed into the process chamber.
- the flow of inert gas into the process chamber is discontinued.
- the gate valve is opened after discontinuing the flow of inert gas into the process chamber while continuing to flow inert gas into the transfer chamber.
- the workpiece is then transferred between the transfer chamber and the process chamber.
- a method of transporting a workpiece in a semiconductor processing apparatus comprises pumping a first chamber of the processing apparatus to achieve a first pressure in the first chamber and pumping a second chamber of the processing apparatus to achieve a second pressure in the second chamber.
- An inert gas is flowed into the first chamber.
- a gate valve located between the first chamber and the second chamber is opened. The pumping of the first chamber is discontinued prior to opening the gate valve and while the gate valve is opened.
- the workpiece is then transferred between the first chamber and the second chamber.
- a method for transporting a workpiece in a semiconductor processing apparatus comprising a transfer chamber, a process chamber, and a gate valve between the transfer chamber and the process chamber.
- the method comprises vacuum pumping to achieve a lower pressure in the process chamber than in the transfer chamber.
- An inert gas is flowed into the transfer chamber.
- An inert gas is also flowed into the process chamber.
- the gate valve is opened while continuing to operate the at least one pump.
- the flow of inert gas into the process chamber is kept off while the gate valve is opened.
- the workpiece is then transferred between the transfer chamber and the process chamber.
- FIGURE 1 is a top plan view of a wafer processing apparatus in accordance with a preferred embodiment of the present invention
- FIGURE 2 is a simplified schematic view of the wafer processing apparatus of FIGURE 1 ;
- FIGURE 3 is a chart illustrating the status of various components of the processing apparatus when the gate valve is opened or closed, in accordance with the preferred embodiment of the invention; and
- FIGURE 4 is a flow chart illustrating a process of operating a semiconductor processing apparatus in accordance with a preferred embodiment of the present invention.
- process steps disclosed herein can be programmed into a process tool controller that is electrically connected to control gas flow valves, mass flow controllers, gate valve actuators, substrate transfer robots, etc.
- a process tool controller that is electrically connected to control gas flow valves, mass flow controllers, gate valve actuators, substrate transfer robots, etc.
- an apparatus can be provided with software programming or hard wiring to achieve the desired processing steps described herein.
- an exemplary semiconductor processing apparatus 20 comprising a central substrate or workpiece handling chamber, or referred to herein as a transfer chamber 26, connected to at least one process chamber.
- FIGURE 1 shows the handling chamber 26 surrounded by a number of process chambers 30.
- the semiconductor processing apparatus 20 is adapted for use in CMOS gate stack applications.
- the process chambers 30 comprise a hydrogen fluoride (HF) vapor clean chamber 34, a silicon nitride chemical vapor deposition (CVD) chamber 36, and an atomic layer deposition (ALD) chamber 38. It is to be understood, however, that the semiconductor processing apparatus 20 illustrated in FIGURE 1 is merely exemplary.
- the apparatus 20 can include a greater or lesser number of process chambers 30.
- the apparatus 20 can include only one process chamber 30 connected to the transfer chamber 26, or can include more than the illustrated three process chambers 30.
- the apparatus 20 can be configured to perform additional or other types of processes, and can be configured to carry out the same process in two or more of the process chambers 30.
- the semiconductor processing apparatus 20 of the illustrated embodiment has a modular design and meets Semiconductor Equipment and Materials International (SEMI) standardization requirements for convenient interconnection between the transfer chamber 26 and the process chambers 30.
- SEMI Semiconductor Equipment and Materials International
- Each of the process chambers 30 is isolated from the transfer chamber 26 by a gate valve 40 (see FIGURE 2).
- the gate valves 40 can be opened to allow the transfer of a semiconductor wafer or other workpiece between the transfer chamber 26 and the process chambers 30 by a workpiece handling robot 46 (see FIGURE 2) located within the transfer chamber 26.
- the transfer chamber 26 and process chambers 30 are preferably situated within a gray room defined by a gray room wall 48.
- a first or transfer chamber vacuum pump 50 is provided, either within the gray room or in a clean room on the opposite side of the gray room wall 48. In other arrangements, no clean room or gray room is provided.
- a second or process chamber vacuum pump 54 is provided for each of the process chambers 30.
- the transfer chamber pump 50 and process chamber pumps 54 selectively communicate with the transfer chamber 26 and the process chambers 30, respectively, via conductance lines 58 to regulate the pressures in the chambers 26, 30. In alternative embodiments, however, a greater or lesser number of pumps can be provided to service the transfer chamber 26 and the process chambers 30.
- a single pump may service more than one chamber through various valved conductance lines, or more than one pump may comprise a pump "bank" for servicing a single chamber.
- each of the process chambers 30 is connected to a source of purge gas and reactant gas(es) and that the transfer chamber 26 is also connected to a source of purge gas 80 (see FIGURE 2).
- a gas distribution system includes purge gas inlets in each of the process chambers 30 and in the transfer chamber 26.
- a load lock chamber 62 is provided at a front end of the transfer chamber 26.
- the illustrated embodiment includes two load lock chambers 62. Alternatively, however, a single load lock chamber 62 or more than two load lock chambers 62 could be provided.
- the load lock chambers 62 are isolated from the transfer chamber 26 by gate valves (not shown).
- a loading platform 68 is provided in front of the load lock chambers 62 to automatically load wafers from cassettes (not shown), or load the cassettes themselves, into the load lock chambers 62.
- the loading platform 68 of the illustrated embodiment includes two shuttles 72, each of which can accommodate up to two cassettes.
- the cassettes are standard front-opening unified pod ("FOUPs"), which provide closed environments for the wafers.
- the cassettes can be empty to receive wafers, or can contain from one to twenty-five wafers to be processed.
- a user enters a process recipe into a controller (not shown).
- the process recipe may include instructions regarding process sequences, process times, process temperatures, pressures and gas flows.
- one of the shuttles 72 positions a cassette in front of one of the load lock chambers 62.
- the load lock chamber 62 is then back-filled to atmospheric pressure.
- the load lock chamber 62 is opened, and a cluster platform robot (not shown) transfers the wafers from the cassette or transfers the cassette itself from the shuttle 72 to the load lock chamber 62.
- the load lock chamber 62 is then closed and evacuated.
- the gate valve between the active load lock chamber 62 and the transfer chamber 26 is opened to allow the workpiece handling robot within the transfer chamber 26 to access the cassette.
- the workpiece handling robot extends into the load lock chamber 62 and removes a workpiece (e.g., wafer) from the load lock chamber 62.
- the gate valve is then closed, and the robot moves the wafer towards the process chamber 30 to be accessed.
- the transfer chamber pump 50 and the pump 54 of the process chamber 30 to be accessed are operated, as necessary, to achieve a slightly lower pressure in the process chamber 30 than in the transfer chamber 26.
- the pressure in the process chamber 30 prior to opening the gate valve 40 is slightly below its operating value during processing. In this manner the process chamber 30 is backfilled to process pressure during wafer transfer, as will be understood in view of the disclosure below.
- the lower pressure in the process chamber 30 compared to the transfer chamber 26 can be provided in any desired manner.
- the pressure differential between the process chamber 30 and the transfer chamber 26 is preferably low enough to avoid generating a significant pressure wave upon opening of the gate valve 40, which could stir particle contaminants in the processing apparatus 20.
- the optimum pressure differential will depend upon a number of different factors, including the particular design of the apparatus 20.
- the pressure differential is between about 100 mTorr and 5 Torr.
- a pressure differential between the process chamber 30 and the transfer chamber 26 of about 100 mTorr to 300 mTorr has been shown to be advantageous. More preferably, the pressure differential between the process chamber 30 and the transfer chamber 26 is about 100 mTorr to 150 mTorr.
- the pressure in the transfer chamber 26 is preferably between about 300 mTorr and 500 mTorr, and more preferably between about 300 mTorr and 350 mTorr.
- the process chamber 30 is pumped to about 1 Torr prior to opening the gate valve 40, the pressure in the transfer chamber 26 is preferably about 3 Torr, such that the pressure differential is about 2 Torr.
- an inert or non-reactive gas also known as purge or sweep gas
- nitrogen (N 2 ) is flowed into the transfer chamber 26 from a gas source 80 via a gas line 84.
- the inert gas may already be flowing into the transfer chamber 26 during pumping of the transfer chamber 26 and the process chamber 30 to reach the desired pressures in the chambers 26, 30, in which case the flow of inert gas into the transfer chamber 26 may be continued.
- Inert gas is often flowed in semiconductor process reactors to exclude oxygen, moisture and particulates.
- the gate valve 40 between the transfer chamber 26 and the process chamber 30 is then opened, while the pump 54 of the process chamber 30 continues to operate.
- the inert gas flow is initiated in the transfer chamber 26 at least 2 seconds, and more preferably at least 10 seconds prior to opening the gate valve 40 to the process chamber, and most preferably inert gas flow in the transfer chamber 26 continues while the gate valve is opened.
- the transfer chamber pump 50 preferably is isolated from the transfer chamber 26.
- the pump 50 can be isolated simultaneously with opening. More preferably, the gate valve 40 is opened at least 1 second after isolating the transfer chamber pump 50 from the transfer chamber 26, and most preferably the gate valve 40 is opened between about 2 seconds and 5 seconds after isolating the transfer chamber pump 50.
- the isolation of the transfer chamber pump 50 may be accomplished, for example, by closing a valve 88 in the conductance line 58 between the transfer chamber 26 and the transfer chamber pump 50, by turning off the pump 50, reducing the pump 50 speed, on diverting the suction to another path.
- the gate valve 40 is opened after discontinuing the flow of inert gas into the process chamber 30. More preferably, the gate valve 40 is opened at least 1 second after discontinuing the flow of inert gas into the process chamber 30, and most preferably the gate valve 40 is opened between about 2 seconds and 10 seconds after discontinuing the purge flow within the process chamber 30.
- inert gas is directly provided to the process chamber 30 by way of an inert gas inlet opening to the process chamber 30 when the gate valve 40 is opened
- inert gas is indirectly provided to the chamber by way of flow from the transfer chamber 26 when the gate valve 40 is opened, as explained in more detail in the paragraph below.
- a definable convective flow of inert gas from the transfer chamber 26 to the process chamber 30 is generated upon the opening of the gate valve 40 between the chambers 26, 30.
- the robot 46 then transports the wafer into the process chamber 30, and the gate valve 40 is closed.
- the purge and pump state shown in FIGURE 3 creates a definable flow of inert gas from the transfer chamber 26 to the process chamber 30 upon opening of the gate valve 40.
- the velocity of the gas flow between the chambers 26, 30 can be adjusted, as desired, by operating a mass flow controller located in the gas line 84 between the transfer chamber 26 and the inert gas source 80.
- an inert gas curtain is generated at the transfer chamber side of the gate valve 40 between the transfer chamber 26 and each of the process chambers 30.
- the inert gas curtain preferably is generated by gas jets (not shown) directed towards the process chamber 30 along the perimeter wall of the gate valve 40, thereby reducing the boundary layer thickness of the inert gas at the perimeter wall.
- gas jets not shown
- back flow of the inert gas into the transfer chamber 26 (along with any contaminants from the process chamber 30) is reduced.
- the amount of the inert gas flowed from the transfer chamber 26 to the process chamber 30 can also generally be reduced without adversely affecting contamination.
- the transfer chamber pump 50 and the pump 54 of the process chamber 30 to be accessed are again operated, as necessary, to achieve a slightly lower pressure in the process chamber 30 than in the transfer chamber 26.
- the pressure in the process chamber is actively controlled to be at a lower level than in the transfer chamber prior to opening the gate valve. Accordingly, inert gas flows directly into the transfer chamber 26 but flows only indirectly, through the gate valve 40, into the process chamber 30. When the desired pressures are obtained in the transfer chamber 26 and the process chamber 30 to be accessed, the inert gas is flowed or continued in the transfer chamber 26.
- the gate valve 40 between the transfer chamber 26 and the process chamber 30 is then opened, while the pump 54 of the process chamber 30 continues to operate.
- the transfer chamber pump 50 is isolated from the transfer chamber 26, and no inert gas flows into the process chamber 30.
- the pump 54 of the process chamber 30, however, continues to operate, and the inert gas continues to flow into the transfer chamber 26.
- the robot 46 transports the wafer out of the process chamber 30, and the gate valve 40 is closed. The wafer can then be transferred, as desired, to another process chamber 30, to a cooling station (not shown), or back to the cassette.
- the method described herein may be carried out each time one of the gate valves 40 between the transfer chamber 26 and one of the process chambers 30 is opened.
- the reactants or reaction products present in one process chamber 30 are prevented from entering the transfer chamber 26, from which they might subsequently contaminate other process chambers 30 or otherwise undesirably react with materials in the transfer chamber 26, causing, e.g., corrosion.
- FIGURES 3 and 4 summarize the pump and purge status of the transfer and process chambers, relative to the gate valve opening and closing, according to the preferred embodiment of the present invention.
- the gate valve is closed (and typically processing is being conducted inside the process chamber) conditions are established 100 such that a lower pressure is present in the process chamber as compared to the transfer chamber. This ensures an initial flux of gases in the direction of the process chamber upon opening of the gate valve.
- the controls are programmed to first turn OFF 110 the transfer chamber pump and the process chamber purge.
- the transfer chamber purge and the process chamber pump are maintained in their ON conditions.
- the purge gas has a definitive flow direction from the transfer chamber to the process chamber. This definitive flow direction minimizes risk of back diffusion of homogeneous or heterogeneous contaminants or residual reactants from the process chamber out to the transfer chamber.
- Workpieces can then be transferred 130 between the process chamber and the transfer chamber.
- a processed wafer can be removed from the process chamber, and a fresh wafer can be exchanged and placed inside the process chamber.
- the fresh wafer is already present in the transfer chamber for this exchange, such that other gate valves do not need to be opened.
- the transfer chamber can include a staging area for the fresh wafer and a cooling station for the processed wafer.
- multiple robots, multiple end effectors, or multiple spots can be provided on a single robot to obviate the need for stations.
- a buffer or load lock is provided for wafers for performing exchange.
- the processing apparatus 20 might have only one or any other suitable number of process chambers 30 connected to the transfer chamber 26. It is further contemplated that various combinations and sub-combinations of the specific features and aspects of the embodiments may be made and still fall within the scope of the invention. For example, in some instances, it may be desirable to isolate the transfer chamber pump 50 prior to opening the gate valve 40 between the chambers 26, 30 and not discontinue the flow of inert gas to the process chamber 30.
Abstract
Description
Claims
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2004508393A JP4531557B2 (en) | 2002-05-21 | 2003-05-20 | Reduction of cross-contamination between chambers in semiconductor processing tools |
KR1020047018471A KR101050275B1 (en) | 2002-05-21 | 2003-05-20 | How to reduce cross contamination between chambers in semiconductor processing tools |
EP03731261A EP1506570A1 (en) | 2002-05-21 | 2003-05-20 | Reduced cross-contamination between chambers in a semiconductor processing tool |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
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US38220402P | 2002-05-21 | 2002-05-21 | |
US60/382,204 | 2002-05-21 |
Publications (1)
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WO2003100836A1 true WO2003100836A1 (en) | 2003-12-04 |
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ID=29584374
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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PCT/US2003/015843 WO2003100836A1 (en) | 2002-05-21 | 2003-05-20 | Reduced cross-contamination between chambers in a semiconductor processing tool |
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US (2) | US6797617B2 (en) |
EP (1) | EP1506570A1 (en) |
JP (1) | JP4531557B2 (en) |
KR (1) | KR101050275B1 (en) |
WO (1) | WO2003100836A1 (en) |
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- 2003-05-20 JP JP2004508393A patent/JP4531557B2/en not_active Expired - Lifetime
- 2003-05-20 WO PCT/US2003/015843 patent/WO2003100836A1/en active Application Filing
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Also Published As
Publication number | Publication date |
---|---|
JP4531557B2 (en) | 2010-08-25 |
KR101050275B1 (en) | 2011-07-19 |
EP1506570A1 (en) | 2005-02-16 |
US6797617B2 (en) | 2004-09-28 |
US7022613B2 (en) | 2006-04-04 |
JP2005527120A (en) | 2005-09-08 |
US20040166683A1 (en) | 2004-08-26 |
US20030219977A1 (en) | 2003-11-27 |
KR20050013105A (en) | 2005-02-02 |
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