WO2004001802A3 - Nrom memory cell, memory array, related devices and methods - Google Patents

Nrom memory cell, memory array, related devices and methods Download PDF

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Publication number
WO2004001802A3
WO2004001802A3 PCT/US2003/019303 US0319303W WO2004001802A3 WO 2004001802 A3 WO2004001802 A3 WO 2004001802A3 US 0319303 W US0319303 W US 0319303W WO 2004001802 A3 WO2004001802 A3 WO 2004001802A3
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WO
WIPO (PCT)
Prior art keywords
array
methods
region
related devices
store
Prior art date
Application number
PCT/US2003/019303
Other languages
French (fr)
Other versions
WO2004001802A2 (en
Inventor
Kirk Prall
Leonard Forbes
Original Assignee
Micron Technology Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/177,211 external-priority patent/US20030235076A1/en
Priority claimed from US10/232,411 external-priority patent/US20040041214A1/en
Application filed by Micron Technology Inc filed Critical Micron Technology Inc
Priority to AU2003263748A priority Critical patent/AU2003263748A1/en
Priority to JP2004515933A priority patent/JP4678760B2/en
Priority to KR1020047020733A priority patent/KR100864135B1/en
Priority to EP03761130A priority patent/EP1530803A2/en
Publication of WO2004001802A2 publication Critical patent/WO2004001802A2/en
Publication of WO2004001802A3 publication Critical patent/WO2004001802A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
    • H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7926—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5692—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency read-only digital stores using storage elements with more than two stable states
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
    • G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7889—Vertical transistors, i.e. transistors having source and drain not in the same horizontal plane
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
    • H01L29/7923—Programmable transistors with more than two possible different levels of programmation
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B20/00—Read-only memory [ROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/20—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B41/23—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B41/27—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B43/00—EEPROM devices comprising charge-trapping gate insulators
    • H10B43/20—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels
    • H10B43/23—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels
    • H10B43/27—EEPROM devices comprising charge-trapping gate insulators characterised by three-dimensional arrangements, e.g. with cells on different height levels with source and drain on different levels, e.g. with sloping channels the channels comprising vertical portions, e.g. U-shaped channels
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic

Abstract

An array of memory cells configured to store at least one bit per one F2 includes substantially vertical structures (34) providing an electronic memory function spaced apart a distance equal to one half of a minimum pitch of the array. The structures providing the electronic memory function are configured to store more than one bit per gate. The array also includes electrical contacts to the memory cells including the substantially vertical structures. The cells can be programmed to have one of a number of charge levels trapped in the gate insulator adjacent to the first source/drain region such that the channel region has a first voltage threshold region (Vt1) and a second voltage threshold region (Vt2) and such that the programmed cell operates at reduced drain source current.
PCT/US2003/019303 2002-06-21 2003-06-19 Nrom memory cell, memory array, related devices and methods WO2004001802A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
AU2003263748A AU2003263748A1 (en) 2002-06-21 2003-06-19 Nrom memory cell, memory array, related devices and methods
JP2004515933A JP4678760B2 (en) 2002-06-21 2003-06-19 Array of memory cells, memory array, memory device, and method of forming a memory array having multi-state cells
KR1020047020733A KR100864135B1 (en) 2002-06-21 2003-06-19 Nrom memory cell, memory array, related devices and methods
EP03761130A EP1530803A2 (en) 2002-06-21 2003-06-19 Nrom memory cell, memory array, related devices an methods

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/177,211 US20030235076A1 (en) 2002-06-21 2002-06-21 Multistate NROM having a storage density much greater than 1 Bit per 1F2
US10/177,211 2002-06-21
US10/232,411 US20040041214A1 (en) 2002-08-29 2002-08-29 One F2 memory cell, memory array, related devices and methods
US10/232,411 2002-08-29

Publications (2)

Publication Number Publication Date
WO2004001802A2 WO2004001802A2 (en) 2003-12-31
WO2004001802A3 true WO2004001802A3 (en) 2004-08-05

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/019303 WO2004001802A2 (en) 2002-06-21 2003-06-19 Nrom memory cell, memory array, related devices and methods

Country Status (8)

Country Link
US (3) US7220634B2 (en)
EP (1) EP1530803A2 (en)
JP (2) JP4678760B2 (en)
KR (1) KR100864135B1 (en)
CN (1) CN100407427C (en)
AU (1) AU2003263748A1 (en)
SG (1) SG125143A1 (en)
WO (1) WO2004001802A2 (en)

Families Citing this family (138)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20040041214A1 (en) * 2002-08-29 2004-03-04 Prall Kirk D. One F2 memory cell, memory array, related devices and methods
JP4334315B2 (en) * 2003-10-10 2009-09-30 株式会社ルネサステクノロジ Manufacturing method of semiconductor memory device
US7050330B2 (en) * 2003-12-16 2006-05-23 Micron Technology, Inc. Multi-state NROM device
TWI251337B (en) * 2003-12-29 2006-03-11 Powerchip Semiconductor Corp Non-volatile memory cell and manufacturing method thereof
KR100546409B1 (en) * 2004-05-11 2006-01-26 삼성전자주식회사 2-bit SONOS type memory cell comprising recessed channel and manufacturing method for the same
DE102004028679A1 (en) * 2004-06-14 2006-01-05 Infineon Technologies Ag Isolation grave arrangement
US7190616B2 (en) * 2004-07-19 2007-03-13 Micron Technology, Inc. In-service reconfigurable DRAM and flash memory device
KR100634266B1 (en) * 2004-09-02 2006-10-13 삼성전자주식회사 Non-volatile memory device, method of manufacturing the same and method of operating the same
US7271052B1 (en) * 2004-09-02 2007-09-18 Micron Technology, Inc. Long retention time single transistor vertical memory gain cell
US7053447B2 (en) * 2004-09-14 2006-05-30 Infineon Technologies Ag Charge-trapping semiconductor memory device
TWI253748B (en) * 2004-09-17 2006-04-21 Powerchip Semiconductor Corp Nonvolatile memory and manufacturing method and operating method thereof
US7518179B2 (en) 2004-10-08 2009-04-14 Freescale Semiconductor, Inc. Virtual ground memory array and method therefor
KR100630725B1 (en) * 2004-12-17 2006-10-02 삼성전자주식회사 Semiconductor device having buried bit line and method of manufacturing the same
US7365382B2 (en) * 2005-02-28 2008-04-29 Infineon Technologies Ag Semiconductor memory having charge trapping memory cells and fabrication method thereof
US7112490B1 (en) * 2005-07-25 2006-09-26 Freescale Semiconductor, Inc. Hot carrier injection programmable structure including discontinuous storage elements and spacer control gates in a trench
US7619270B2 (en) 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Electronic device including discontinuous storage elements
US7256454B2 (en) * 2005-07-25 2007-08-14 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements and a process for forming the same
US7314798B2 (en) * 2005-07-25 2008-01-01 Freescale Semiconductor, Inc. Method of fabricating a nonvolatile storage array with continuous control gate employing hot carrier injection programming
US7285819B2 (en) * 2005-07-25 2007-10-23 Freescale Semiconductor, Inc. Nonvolatile storage array with continuous control gate employing hot carrier injection programming
US7262997B2 (en) * 2005-07-25 2007-08-28 Freescale Semiconductor, Inc. Process for operating an electronic device including a memory array and conductive lines
US7394686B2 (en) * 2005-07-25 2008-07-01 Freescale Semiconductor, Inc. Programmable structure including discontinuous storage elements and spacer control gates in a trench
US7582929B2 (en) 2005-07-25 2009-09-01 Freescale Semiconductor, Inc Electronic device including discontinuous storage elements
US7642594B2 (en) 2005-07-25 2010-01-05 Freescale Semiconductor, Inc Electronic device including gate lines, bit lines, or a combination thereof
US7250340B2 (en) * 2005-07-25 2007-07-31 Freescale Semiconductor, Inc. Method of fabricating programmable structure including discontinuous storage elements and spacer control gates in a trench
US20070020840A1 (en) * 2005-07-25 2007-01-25 Freescale Semiconductor, Inc. Programmable structure including nanocrystal storage elements in a trench
US7619275B2 (en) 2005-07-25 2009-11-17 Freescale Semiconductor, Inc. Process for forming an electronic device including discontinuous storage elements
US7592224B2 (en) 2006-03-30 2009-09-22 Freescale Semiconductor, Inc Method of fabricating a storage device including decontinuous storage elements within and between trenches
KR100777016B1 (en) 2006-06-20 2007-11-16 재단법인서울대학교산학협력재단 A nand flash memory array having a pillar structure and a fabricating method of the same
US7906804B2 (en) * 2006-07-19 2011-03-15 Kabushiki Kaisha Toshiba Nonvolatile semiconductor memory device and manufacturing method thereof
US7785965B2 (en) * 2006-09-08 2010-08-31 Spansion Llc Dual storage node memory devices and methods for fabricating the same
WO2008036552A2 (en) * 2006-09-19 2008-03-27 Sandisk Corporation Array of non-volatile memory cells with floating gates formed of spacers in substrate trenches
US7838920B2 (en) * 2006-12-04 2010-11-23 Micron Technology, Inc. Trench memory structures and operation
JP2008166528A (en) * 2006-12-28 2008-07-17 Spansion Llc Semiconductor device and its manufacturing method
US7838922B2 (en) 2007-01-24 2010-11-23 Freescale Semiconductor, Inc. Electronic device including trenches and discontinuous storage elements
US7572699B2 (en) 2007-01-24 2009-08-11 Freescale Semiconductor, Inc Process of forming an electronic device including fins and discontinuous storage elements
US7651916B2 (en) 2007-01-24 2010-01-26 Freescale Semiconductor, Inc Electronic device including trenches and discontinuous storage elements and processes of forming and using the same
JP5301123B2 (en) * 2007-07-25 2013-09-25 スパンション エルエルシー Semiconductor device and manufacturing method thereof
US8320191B2 (en) 2007-08-30 2012-11-27 Infineon Technologies Ag Memory cell arrangement, method for controlling a memory cell, memory array and electronic device
WO2009095902A2 (en) 2008-01-31 2009-08-06 Densbits Technologies Ltd. Systems and methods for handling immediate data errors in flash memory
US8650352B2 (en) * 2007-09-20 2014-02-11 Densbits Technologies Ltd. Systems and methods for determining logical values of coupled flash memory cells
US8694715B2 (en) 2007-10-22 2014-04-08 Densbits Technologies Ltd. Methods for adaptively programming flash memory devices and flash memory systems incorporating same
WO2009053961A2 (en) 2007-10-25 2009-04-30 Densbits Technologies Ltd. Systems and methods for multiple coding rates in flash devices
WO2009072105A2 (en) * 2007-12-05 2009-06-11 Densbits Technologies Ltd. A low power chien-search based bch/rs decoding system for flash memory, mobile communications devices and other applications
US8335977B2 (en) 2007-12-05 2012-12-18 Densbits Technologies Ltd. Flash memory apparatus and methods using a plurality of decoding stages including optional use of concatenated BCH codes and/or designation of “first below” cells
US8453022B2 (en) 2007-12-05 2013-05-28 Densbits Technologies Ltd. Apparatus and methods for generating row-specific reading thresholds in flash memory
US8276051B2 (en) 2007-12-12 2012-09-25 Densbits Technologies Ltd. Chien-search system employing a clock-gating scheme to save power for error correction decoder and other applications
WO2009074978A2 (en) 2007-12-12 2009-06-18 Densbits Technologies Ltd. Systems and methods for error correction and decoding on multi-level physical media
US8327246B2 (en) 2007-12-18 2012-12-04 Densbits Technologies Ltd. Apparatus for coding at a plurality of rates in multi-level flash memory systems, and methods useful in conjunction therewith
US8710576B2 (en) * 2008-02-12 2014-04-29 Halo Lsi Inc. High density vertical structure nitride flash memory
WO2009118720A2 (en) * 2008-03-25 2009-10-01 Densbits Technologies Ltd. Apparatus and methods for hardware-efficient unbiased rounding
JP2010003916A (en) * 2008-06-20 2010-01-07 Elpida Memory Inc Semiconductor device and method of manufacturing the same
US8332725B2 (en) 2008-08-20 2012-12-11 Densbits Technologies Ltd. Reprogramming non volatile memory portions
KR101529575B1 (en) * 2008-09-10 2015-06-29 삼성전자주식회사 Transistor, inverter comprising the same and methods of manufacturing transistor and inverter
KR101517390B1 (en) * 2008-11-03 2015-05-04 삼성전자주식회사 Vertical type semiconductor device and method for manufacturing the same
US8819385B2 (en) 2009-04-06 2014-08-26 Densbits Technologies Ltd. Device and method for managing a flash memory
US8458574B2 (en) 2009-04-06 2013-06-04 Densbits Technologies Ltd. Compact chien-search based decoding apparatus and method
US8566510B2 (en) 2009-05-12 2013-10-22 Densbits Technologies Ltd. Systems and method for flash memory management
US8995197B1 (en) 2009-08-26 2015-03-31 Densbits Technologies Ltd. System and methods for dynamic erase and program control for flash memory device memories
US8305812B2 (en) * 2009-08-26 2012-11-06 Densbits Technologies Ltd. Flash memory module and method for programming a page of flash memory cells
US9330767B1 (en) 2009-08-26 2016-05-03 Avago Technologies General Ip (Singapore) Pte. Ltd. Flash memory module and method for programming a page of flash memory cells
US8868821B2 (en) 2009-08-26 2014-10-21 Densbits Technologies Ltd. Systems and methods for pre-equalization and code design for a flash memory
US8730729B2 (en) 2009-10-15 2014-05-20 Densbits Technologies Ltd. Systems and methods for averaging error rates in non-volatile devices and storage systems
US8724387B2 (en) 2009-10-22 2014-05-13 Densbits Technologies Ltd. Method, system, and computer readable medium for reading and programming flash memory cells using multiple bias voltages
US8626988B2 (en) * 2009-11-19 2014-01-07 Densbits Technologies Ltd. System and method for uncoded bit error rate equalization via interleaving
US9037777B2 (en) * 2009-12-22 2015-05-19 Densbits Technologies Ltd. Device, system, and method for reducing program/read disturb in flash arrays
US8508997B2 (en) 2009-12-23 2013-08-13 Intel Corporation Multi-cell vertical memory nodes
US8222140B2 (en) * 2009-12-23 2012-07-17 Intel Corporation Pitch division patterning techniques
US8607124B2 (en) * 2009-12-24 2013-12-10 Densbits Technologies Ltd. System and method for setting a flash memory cell read threshold
US8885407B1 (en) * 2010-01-19 2014-11-11 Perumal Ratnam Vertical memory cells and methods, architectures and devices for the same
KR20110085179A (en) * 2010-01-19 2011-07-27 주식회사 하이닉스반도체 Semiconductor memory device and method thereof
US8700970B2 (en) * 2010-02-28 2014-04-15 Densbits Technologies Ltd. System and method for multi-dimensional decoding
US8527840B2 (en) 2010-04-06 2013-09-03 Densbits Technologies Ltd. System and method for restoring damaged data programmed on a flash device
US8516274B2 (en) 2010-04-06 2013-08-20 Densbits Technologies Ltd. Method, system and medium for analog encryption in a flash memory
US8745317B2 (en) 2010-04-07 2014-06-03 Densbits Technologies Ltd. System and method for storing information in a multi-level cell memory
CN102222524B (en) * 2010-04-14 2014-07-16 旺宏电子股份有限公司 Method for operating memory cell
CN101847655B (en) * 2010-04-22 2014-10-22 上海华虹宏力半导体制造有限公司 Trench grate capable of improving trench grate MOS device performance and manufacture method thereof
US9021177B2 (en) 2010-04-29 2015-04-28 Densbits Technologies Ltd. System and method for allocating and using spare blocks in a flash memory
TWI426600B (en) * 2010-05-13 2014-02-11 Macronix Int Co Ltd Method of operating memory cell
US8535992B2 (en) 2010-06-29 2013-09-17 Micron Technology, Inc. Thyristor random access memory device and method
US8468431B2 (en) 2010-07-01 2013-06-18 Densbits Technologies Ltd. System and method for multi-dimensional encoding and decoding
US8539311B2 (en) 2010-07-01 2013-09-17 Densbits Technologies Ltd. System and method for data recovery in multi-level cell memories
US8467249B2 (en) 2010-07-06 2013-06-18 Densbits Technologies Ltd. Systems and methods for storing, retrieving, and adjusting read thresholds in flash memory storage system
US20120019284A1 (en) * 2010-07-26 2012-01-26 Infineon Technologies Austria Ag Normally-Off Field Effect Transistor, a Manufacturing Method Therefor and a Method for Programming a Power Field Effect Transistor
US8964464B2 (en) 2010-08-24 2015-02-24 Densbits Technologies Ltd. System and method for accelerated sampling
US8508995B2 (en) 2010-09-15 2013-08-13 Densbits Technologies Ltd. System and method for adjusting read voltage thresholds in memories
US9063878B2 (en) 2010-11-03 2015-06-23 Densbits Technologies Ltd. Method, system and computer readable medium for copy back
TWI427775B (en) * 2010-11-25 2014-02-21 Macronix Int Co Ltd Semiconductor integrated circuit device and method of manufacturing a semiconductor integrated circuit device
US8850100B2 (en) 2010-12-07 2014-09-30 Densbits Technologies Ltd. Interleaving codeword portions between multiple planes and/or dies of a flash memory device
US10079068B2 (en) 2011-02-23 2018-09-18 Avago Technologies General Ip (Singapore) Pte. Ltd. Devices and method for wear estimation based memory management
US8693258B2 (en) 2011-03-17 2014-04-08 Densbits Technologies Ltd. Obtaining soft information using a hard interface
US8990665B1 (en) 2011-04-06 2015-03-24 Densbits Technologies Ltd. System, method and computer program product for joint search of a read threshold and soft decoding
KR20120117127A (en) * 2011-04-14 2012-10-24 삼성전자주식회사 A shallow trench isolation layer structure and method for forming the same
US9501392B1 (en) 2011-05-12 2016-11-22 Avago Technologies General Ip (Singapore) Pte. Ltd. Management of a non-volatile memory module
US9372792B1 (en) 2011-05-12 2016-06-21 Avago Technologies General Ip (Singapore) Pte. Ltd. Advanced management of a non-volatile memory
US9110785B1 (en) 2011-05-12 2015-08-18 Densbits Technologies Ltd. Ordered merge of data sectors that belong to memory space portions
US9195592B1 (en) 2011-05-12 2015-11-24 Densbits Technologies Ltd. Advanced management of a non-volatile memory
US8996790B1 (en) 2011-05-12 2015-03-31 Densbits Technologies Ltd. System and method for flash memory management
US9396106B2 (en) 2011-05-12 2016-07-19 Avago Technologies General Ip (Singapore) Pte. Ltd. Advanced management of a non-volatile memory
US8667211B2 (en) 2011-06-01 2014-03-04 Densbits Technologies Ltd. System and method for managing a non-volatile memory
US8588003B1 (en) 2011-08-01 2013-11-19 Densbits Technologies Ltd. System, method and computer program product for programming and for recovering from a power failure
US8553468B2 (en) 2011-09-21 2013-10-08 Densbits Technologies Ltd. System and method for managing erase operations in a non-volatile memory
US8947941B2 (en) 2012-02-09 2015-02-03 Densbits Technologies Ltd. State responsive operations relating to flash memory cells
US8996788B2 (en) 2012-02-09 2015-03-31 Densbits Technologies Ltd. Configurable flash interface
US8575035B2 (en) * 2012-02-22 2013-11-05 Omnivision Technologies, Inc. Methods of forming varying depth trenches in semiconductor devices
US8996793B1 (en) 2012-04-24 2015-03-31 Densbits Technologies Ltd. System, method and computer readable medium for generating soft information
US8838937B1 (en) 2012-05-23 2014-09-16 Densbits Technologies Ltd. Methods, systems and computer readable medium for writing and reading data
US8879325B1 (en) 2012-05-30 2014-11-04 Densbits Technologies Ltd. System, method and computer program product for processing read threshold information and for reading a flash memory module
US9921954B1 (en) 2012-08-27 2018-03-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Method and system for split flash memory management between host and storage controller
US8796751B2 (en) * 2012-11-20 2014-08-05 Micron Technology, Inc. Transistors, memory cells and semiconductor constructions
US9368225B1 (en) 2012-11-21 2016-06-14 Avago Technologies General Ip (Singapore) Pte. Ltd. Determining read thresholds based upon read error direction statistics
US9069659B1 (en) 2013-01-03 2015-06-30 Densbits Technologies Ltd. Read threshold determination using reference read threshold
US9548380B2 (en) * 2013-03-14 2017-01-17 Silicon Storage Technology, Inc. Non-volatile memory cell having a trapping charge layer in a trench and an array and a method of manufacturing therefor
US20140264557A1 (en) * 2013-03-15 2014-09-18 International Business Machines Corporation Self-aligned approach for drain diffusion in field effect transistors
US9136876B1 (en) 2013-06-13 2015-09-15 Densbits Technologies Ltd. Size limited multi-dimensional decoding
US9413491B1 (en) 2013-10-08 2016-08-09 Avago Technologies General Ip (Singapore) Pte. Ltd. System and method for multiple dimension decoding and encoding a message
US9348694B1 (en) 2013-10-09 2016-05-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Detecting and managing bad columns
US9786388B1 (en) 2013-10-09 2017-10-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Detecting and managing bad columns
US9397706B1 (en) 2013-10-09 2016-07-19 Avago Technologies General Ip (Singapore) Pte. Ltd. System and method for irregular multiple dimension decoding and encoding
US9263349B2 (en) * 2013-11-08 2016-02-16 Globalfoundries Inc. Printing minimum width semiconductor features at non-minimum pitch and resulting device
US9536612B1 (en) 2014-01-23 2017-01-03 Avago Technologies General Ip (Singapore) Pte. Ltd Digital signaling processing for three dimensional flash memory arrays
US10120792B1 (en) 2014-01-29 2018-11-06 Avago Technologies General Ip (Singapore) Pte. Ltd. Programming an embedded flash storage device
US9542262B1 (en) 2014-05-29 2017-01-10 Avago Technologies General Ip (Singapore) Pte. Ltd. Error correction
US9892033B1 (en) 2014-06-24 2018-02-13 Avago Technologies General Ip (Singapore) Pte. Ltd. Management of memory units
US9584159B1 (en) 2014-07-03 2017-02-28 Avago Technologies General Ip (Singapore) Pte. Ltd. Interleaved encoding
US9972393B1 (en) 2014-07-03 2018-05-15 Avago Technologies General Ip (Singapore) Pte. Ltd. Accelerating programming of a flash memory module
US9449702B1 (en) 2014-07-08 2016-09-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Power management
TWI555120B (en) * 2014-10-14 2016-10-21 力晶科技股份有限公司 Semiconductor device and method for fabricating the same
US9524211B1 (en) 2014-11-18 2016-12-20 Avago Technologies General Ip (Singapore) Pte. Ltd. Codeword management
CN105810684A (en) * 2014-12-31 2016-07-27 上海复旦微电子集团股份有限公司 NAND flash memory storage unit, storage unit array structure and forming method thereof
US10305515B1 (en) 2015-02-02 2019-05-28 Avago Technologies International Sales Pte. Limited System and method for encoding using multiple linear feedback shift registers
US10628255B1 (en) 2015-06-11 2020-04-21 Avago Technologies International Sales Pte. Limited Multi-dimensional decoding
US9851921B1 (en) 2015-07-05 2017-12-26 Avago Technologies General Ip (Singapore) Pte. Ltd. Flash memory chip processing
US9954558B1 (en) 2016-03-03 2018-04-24 Avago Technologies General Ip (Singapore) Pte. Ltd. Fast decoding of data stored in a flash memory
TWI601215B (en) * 2016-09-26 2017-10-01 台灣半導體股份有限公司 Field effect transistor having electrode coated sequentially by oxide layer and nitride layer and manufacturing the same
FR3080949B1 (en) * 2018-05-04 2021-05-28 St Microelectronics Rousset NON-VOLATILE LOAD TRAP TYPE MEMORY DEVICE AND METHOD OF MANUFACTURING
KR102615012B1 (en) 2018-11-12 2023-12-19 삼성전자주식회사 Memory device and operation method thereof
US11605438B2 (en) 2020-11-16 2023-03-14 Ememory Technology Inc. Memory device for improving weak-program or stuck bit
CN113629059A (en) * 2021-05-21 2021-11-09 长江存储科技有限责任公司 Manufacturing method of 3D memory device and 3D memory device

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5617351A (en) * 1992-03-12 1997-04-01 International Business Machines Corporation Three-dimensional direct-write EEPROM arrays and fabrication methods
US5768192A (en) * 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
US6114725A (en) * 1997-01-22 2000-09-05 International Business Machines Corporation Structure for folded architecture pillar memory cell

Family Cites Families (126)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US531887A (en) * 1895-01-01 Paper or bill file and punch
US4184207A (en) * 1978-01-27 1980-01-15 Texas Instruments Incorporated High density floating gate electrically programmable ROM
US4420504A (en) 1980-12-22 1983-12-13 Raytheon Company Programmable read only memory
JPS61150369A (en) * 1984-12-25 1986-07-09 Toshiba Corp Read-only semiconductor memory device and manufacture thereof
JPS6240774A (en) * 1985-08-16 1987-02-21 Nippon Denso Co Ltd Non-volatile semiconductor memory
US4881114A (en) * 1986-05-16 1989-11-14 Actel Corporation Selectively formable vertical diode circuit element
US5042011A (en) 1989-05-22 1991-08-20 Micron Technology, Inc. Sense amplifier pulldown device with tailored edge input
US5341328A (en) * 1991-01-18 1994-08-23 Energy Conversion Devices, Inc. Electrically erasable memory elements having reduced switching current requirements and increased write/erase cycle life
US5406509A (en) * 1991-01-18 1995-04-11 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5241496A (en) * 1991-08-19 1993-08-31 Micron Technology, Inc. Array of read-only memory cells, eacch of which has a one-time, voltage-programmable antifuse element constructed within a trench shared by a pair of cells
US5280205A (en) 1992-04-16 1994-01-18 Micron Technology, Inc. Fast sense amplifier
US5379253A (en) * 1992-06-01 1995-01-03 National Semiconductor Corporation High density EEPROM cell array with novel programming scheme and method of manufacture
JP2916610B2 (en) * 1992-06-26 1999-07-05 株式会社半導体エネルギー研究所 MOS memory semiconductor device and manufacturing method thereof
US5330930A (en) * 1992-12-31 1994-07-19 Chartered Semiconductor Manufacturing Pte Ltd. Formation of vertical polysilicon resistor having a nitride sidewall for small static RAM cell
US5378647A (en) * 1993-10-25 1995-01-03 United Microelectronics Corporation Method of making a bottom gate mask ROM device
US5397725A (en) * 1993-10-28 1995-03-14 National Semiconductor Corporation Method of controlling oxide thinning in an EPROM or flash memory array
US5440505A (en) * 1994-01-21 1995-08-08 Intel Corporation Method and circuitry for storing discrete amounts of charge in a single memory element
US5429967A (en) * 1994-04-08 1995-07-04 United Microelectronics Corporation Process for producing a very high density mask ROM
US5508543A (en) * 1994-04-29 1996-04-16 International Business Machines Corporation Low voltage memory
US5610099A (en) * 1994-06-28 1997-03-11 Ramtron International Corporation Process for fabricating transistors using composite nitride structure
JPH08186183A (en) * 1994-12-28 1996-07-16 Sony Corp Non-volatile semiconductor memory device and its manufacture
US5576236A (en) * 1995-06-28 1996-11-19 United Microelectronics Corporation Process for coding and code marking read-only memory
DE19600423C2 (en) 1996-01-08 2001-07-05 Siemens Ag Electrically programmable memory cell arrangement and method for its production
US5627785A (en) 1996-03-15 1997-05-06 Micron Technology, Inc. Memory device with a sense amplifier
JP2000515327A (en) * 1996-08-01 2000-11-14 シーメンス アクチエンゲゼルシヤフト Method of operating memory cell device
DE19631146A1 (en) * 1996-08-01 1998-02-05 Siemens Ag Non-volatile memory cell
JP3191693B2 (en) * 1996-08-29 2001-07-23 日本電気株式会社 Method for manufacturing semiconductor memory device
US6028342A (en) * 1996-11-22 2000-02-22 United Microelectronics Corp. ROM diode and a method of making the same
US5792697A (en) * 1997-01-07 1998-08-11 United Microelectronics Corporation Method for fabricating a multi-stage ROM
TW319904B (en) * 1997-01-20 1997-11-11 United Microelectronics Corp Three dimensional read only memory and manufacturing method thereof
TW347581B (en) * 1997-02-05 1998-12-11 United Microelectronics Corp Process for fabricating read-only memory cells
US6190966B1 (en) * 1997-03-25 2001-02-20 Vantis Corporation Process for fabricating semiconductor memory device with high data retention including silicon nitride etch stop layer formed at high temperature with low hydrogen ion concentration
JPH118325A (en) * 1997-04-25 1999-01-12 Nippon Steel Corp Nonvolatile semiconductor device, its manufacturing method, its writing method, its reading method, storage medium and semiconductor device
US6297096B1 (en) * 1997-06-11 2001-10-02 Saifun Semiconductors Ltd. NROM fabrication method
US5966603A (en) * 1997-06-11 1999-10-12 Saifun Semiconductors Ltd. NROM fabrication method with a periphery portion
US5973356A (en) * 1997-07-08 1999-10-26 Micron Technology, Inc. Ultra high density flash memory
US5936274A (en) * 1997-07-08 1999-08-10 Micron Technology, Inc. High density flash memory
US6072209A (en) * 1997-07-08 2000-06-06 Micro Technology, Inc. Four F2 folded bit line DRAM cell structure having buried bit and word lines
US6150687A (en) 1997-07-08 2000-11-21 Micron Technology, Inc. Memory cell having a vertical transistor with buried source/drain and dual gates
IL125604A (en) * 1997-07-30 2004-03-28 Saifun Semiconductors Ltd Non-volatile electrically erasable and programmble semiconductor memory cell utilizing asymmetrical charge
US6768165B1 (en) * 1997-08-01 2004-07-27 Saifun Semiconductors Ltd. Two bit non-volatile electrically erasable and programmable semiconductor memory cell utilizing asymmetrical charge trapping
US6232643B1 (en) 1997-11-13 2001-05-15 Micron Technology, Inc. Memory using insulator traps
TW406378B (en) * 1998-02-03 2000-09-21 Taiwan Semiconductor Mfg The structure of read-only memory (ROM) and its manufacture method
US5991225A (en) * 1998-02-27 1999-11-23 Micron Technology, Inc. Programmable memory address decode array with vertical transistors
US6124729A (en) * 1998-02-27 2000-09-26 Micron Technology, Inc. Field programmable logic arrays with vertical transistors
US6093606A (en) 1998-03-05 2000-07-25 Taiwan Semiconductor Manufacturing Company Method of manufacture of vertical stacked gate flash memory device
US6144093A (en) 1998-04-27 2000-11-07 International Rectifier Corp. Commonly housed diverse semiconductor die with reduced inductance
US6030871A (en) * 1998-05-05 2000-02-29 Saifun Semiconductors Ltd. Process for producing two bit ROM cell utilizing angled implant
US6215148B1 (en) * 1998-05-20 2001-04-10 Saifun Semiconductors Ltd. NROM cell with improved programming, erasing and cycling
US6348711B1 (en) * 1998-05-20 2002-02-19 Saifun Semiconductors Ltd. NROM cell with self-aligned programming and erasure areas
US6133102A (en) * 1998-06-19 2000-10-17 Wu; Shye-Lin Method of fabricating double poly-gate high density multi-state flat mask ROM cells
TW380318B (en) * 1998-07-29 2000-01-21 United Semiconductor Corp Manufacturing method for flash erasable programmable ROM
US6251731B1 (en) 1998-08-10 2001-06-26 Acer Semiconductor Manufacturing, Inc. Method for fabricating high-density and high-speed nand-type mask roms
US6184089B1 (en) * 1999-01-27 2001-02-06 United Microelectronics Corp. Method of fabricating one-time programmable read only memory
US6157570A (en) 1999-02-04 2000-12-05 Tower Semiconductor Ltd. Program/erase endurance of EEPROM memory cells
US6256231B1 (en) * 1999-02-04 2001-07-03 Tower Semiconductor Ltd. EEPROM array using 2-bit non-volatile memory cells and method of implementing same
US6147904A (en) 1999-02-04 2000-11-14 Tower Semiconductor Ltd. Redundancy method and structure for 2-bit non-volatile memory cells
US6181597B1 (en) * 1999-02-04 2001-01-30 Tower Semiconductor Ltd. EEPROM array using 2-bit non-volatile memory cells with serial read operations
US6108240A (en) * 1999-02-04 2000-08-22 Tower Semiconductor Ltd. Implementation of EEPROM using intermediate gate voltage to avoid disturb conditions
US6134156A (en) * 1999-02-04 2000-10-17 Saifun Semiconductors Ltd. Method for initiating a retrieval procedure in virtual ground arrays
US6081456A (en) * 1999-02-04 2000-06-27 Tower Semiconductor Ltd. Bit line control circuit for a memory array using 2-bit non-volatile memory cells
US6487050B1 (en) 1999-02-22 2002-11-26 Seagate Technology Llc Disc drive with wear-resistant ramp coating of carbon nitride or metal nitride
US6044022A (en) * 1999-02-26 2000-03-28 Tower Semiconductor Ltd. Programmable configuration for EEPROMS including 2-bit non-volatile memory cell arrays
US6174758B1 (en) * 1999-03-03 2001-01-16 Tower Semiconductor Ltd. Semiconductor chip having fieldless array with salicide gates and methods for making same
GB9906247D0 (en) 1999-03-18 1999-05-12 Koninkl Philips Electronics Nv An electronic device comprising a trench gate field effect device
GB9907184D0 (en) 1999-03-30 1999-05-26 Philips Electronics Nv A method of manufacturing a semiconductor device
US6404007B1 (en) * 1999-04-05 2002-06-11 Fairchild Semiconductor Corporation Trench transistor with superior gate dielectric
US6208557B1 (en) * 1999-05-21 2001-03-27 National Semiconductor Corporation EPROM and flash memory cells with source-side injection and a gate dielectric that traps hot electrons during programming
US6218695B1 (en) * 1999-06-28 2001-04-17 Tower Semiconductor Ltd. Area efficient column select circuitry for 2-bit non-volatile memory cells
JP2001077219A (en) * 1999-06-29 2001-03-23 Toshiba Corp Nonvolatile semiconductor storage device and manufacture thereof
US6255166B1 (en) * 1999-08-05 2001-07-03 Aalo Lsi Design & Device Technology, Inc. Nonvolatile memory cell, method of programming the same and nonvolatile memory array
US6204529B1 (en) * 1999-08-27 2001-03-20 Hsing Lan Lung 8 bit per cell non-volatile semiconductor memory structure utilizing trench technology and dielectric floating gate
US6303436B1 (en) * 1999-09-21 2001-10-16 Mosel Vitelic, Inc. Method for fabricating a type of trench mask ROM cell
FR2799570B1 (en) * 1999-10-08 2001-11-16 Itt Mfg Enterprises Inc IMPROVED ELECTRICAL SWITCH WITH MULTI-WAY TACTILE EFFECT AND SINGLE TRIGGER
US6175523B1 (en) * 1999-10-25 2001-01-16 Advanced Micro Devices, Inc Precharging mechanism and method for NAND-based flash memory devices
US6240020B1 (en) * 1999-10-25 2001-05-29 Advanced Micro Devices Method of bitline shielding in conjunction with a precharging scheme for nand-based flash memory devices
US6429063B1 (en) * 1999-10-26 2002-08-06 Saifun Semiconductors Ltd. NROM cell with generally decoupled primary and secondary injection
US6303479B1 (en) * 1999-12-16 2001-10-16 Spinnaker Semiconductor, Inc. Method of manufacturing a short-channel FET with Schottky-barrier source and drain contacts
US6291854B1 (en) * 1999-12-30 2001-09-18 United Microelectronics Corp. Electrically erasable and programmable read only memory device and manufacturing therefor
US6201737B1 (en) * 2000-01-28 2001-03-13 Advanced Micro Devices, Inc. Apparatus and method to characterize the threshold distribution in an NROM virtual ground array
US6272043B1 (en) * 2000-01-28 2001-08-07 Advanced Micro Devices, Inc. Apparatus and method of direct current sensing from source side in a virtual ground array
US6222768B1 (en) * 2000-01-28 2001-04-24 Advanced Micro Devices, Inc. Auto adjusting window placement scheme for an NROM virtual ground array
TW439276B (en) 2000-02-14 2001-06-07 United Microelectronics Corp Fabricating method of read only memory
US6215702B1 (en) * 2000-02-16 2001-04-10 Advanced Micro Devices, Inc. Method of maintaining constant erasing speeds for non-volatile memory cells
US6266281B1 (en) * 2000-02-16 2001-07-24 Advanced Micro Devices, Inc. Method of erasing non-volatile memory cells
US6243300B1 (en) * 2000-02-16 2001-06-05 Advanced Micro Devices, Inc. Substrate hole injection for neutralizing spillover charge generated during programming of a non-volatile memory cell
US6275414B1 (en) * 2000-05-16 2001-08-14 Advanced Micro Devices, Inc. Uniform bitline strapping of a non-volatile memory cell
US6269023B1 (en) * 2000-05-19 2001-07-31 Advanced Micro Devices, Inc. Method of programming a non-volatile memory cell using a current limiter
US6282118B1 (en) * 2000-10-06 2001-08-28 Macronix International Co. Ltd. Nonvolatile semiconductor memory device
TW469601B (en) * 2000-12-08 2001-12-21 Ememory Technology Inc Dual bit trench type gate non-volatile flash memory cell structure and the operating method thereof
US6602805B2 (en) * 2000-12-14 2003-08-05 Macronix International Co., Ltd. Method for forming gate dielectric layer in NROM
JP2002280465A (en) * 2001-03-19 2002-09-27 Sony Corp Nonvolatile semiconductor memory and its fabricating method
US6461949B1 (en) * 2001-03-29 2002-10-08 Macronix International Co. Ltd. Method for fabricating a nitride read-only-memory (NROM)
TW480677B (en) * 2001-04-04 2002-03-21 Macronix Int Co Ltd Method of fabricating a nitride read only memory cell
TW480678B (en) * 2001-04-13 2002-03-21 Macronix Int Co Ltd Method for producing nitride read only memory (NROM)
US6576511B2 (en) * 2001-05-02 2003-06-10 Macronix International Co., Ltd. Method for forming nitride read only memory
TW494541B (en) * 2001-05-28 2002-07-11 Macronix Int Co Ltd Method for producing silicon nitride read-only-memory
US6531887B2 (en) * 2001-06-01 2003-03-11 Macronix International Co., Ltd. One cell programmable switch using non-volatile cell
US6580135B2 (en) * 2001-06-18 2003-06-17 Macronix International Co., Ltd. Silicon nitride read only memory structure and method of programming and erasure
TW495974B (en) * 2001-06-21 2002-07-21 Macronix Int Co Ltd Manufacturing method for nitride read only memory
DE10130766B4 (en) * 2001-06-26 2005-08-11 Infineon Technologies Ag Vertical transistor, memory arrangement and method for producing a vertical transistor
US6432778B1 (en) * 2001-08-07 2002-08-13 Macronix International Co. Ltd. Method of forming a system on chip (SOC) with nitride read only memory (NROM)
US6617204B2 (en) * 2001-08-13 2003-09-09 Macronix International Co., Ltd. Method of forming the protective film to prevent nitride read only memory cell charging
US7067875B2 (en) * 2001-09-20 2006-06-27 Renesas Technology Corp. Semiconductor integrated circuit device and its manufacturing method
TW495977B (en) * 2001-09-28 2002-07-21 Macronix Int Co Ltd Erasing method for p-channel silicon nitride read only memory
US6541815B1 (en) * 2001-10-11 2003-04-01 International Business Machines Corporation High-density dual-cell flash memory structure
TW507369B (en) * 2001-10-29 2002-10-21 Macronix Int Co Ltd Silicon nitride read only memory structure for preventing antenna effect
US6514831B1 (en) * 2001-11-14 2003-02-04 Macronix International Co., Ltd. Nitride read only memory cell
US6486028B1 (en) 2001-11-20 2002-11-26 Macronix International Co., Ltd. Method of fabricating a nitride read-only-memory cell vertical structure
US6417053B1 (en) * 2001-11-20 2002-07-09 Macronix International Co., Ltd. Fabrication method for a silicon nitride read-only memory
US6885585B2 (en) * 2001-12-20 2005-04-26 Saifun Semiconductors Ltd. NROM NOR array
US6421275B1 (en) * 2002-01-22 2002-07-16 Macronix International Co. Ltd. Method for adjusting a reference current of a flash nitride read only memory (NROM) and device thereof
TW521429B (en) * 2002-03-11 2003-02-21 Macronix Int Co Ltd Structure of nitride ROM with protective diode and method for operating the same
US6498377B1 (en) 2002-03-21 2002-12-24 Macronix International, Co., Ltd. SONOS component having high dielectric property
TW529168B (en) * 2002-04-02 2003-04-21 Macronix Int Co Ltd Initialization method of P-type silicon nitride read only memory
DE10219917A1 (en) * 2002-05-03 2003-11-13 Infineon Technologies Ag Trench transistor for a storage cell comprises a trench with vertical side walls, a thin dielectric layer, and oxide layers on semiconductor material arranged on base of the trench and/or on part of the upper side of semiconductor body
TW554489B (en) * 2002-06-20 2003-09-21 Macronix Int Co Ltd Method for fabricating mask ROM device
US20040041214A1 (en) * 2002-08-29 2004-03-04 Prall Kirk D. One F2 memory cell, memory array, related devices and methods
US6853587B2 (en) * 2002-06-21 2005-02-08 Micron Technology, Inc. Vertical NROM having a storage density of 1 bit per 1F2
US20030235076A1 (en) * 2002-06-21 2003-12-25 Micron Technology, Inc. Multistate NROM having a storage density much greater than 1 Bit per 1F2
US7221586B2 (en) * 2002-07-08 2007-05-22 Micron Technology, Inc. Memory utilizing oxide nanolaminates
US6607957B1 (en) * 2002-07-31 2003-08-19 Macronix International Co., Ltd. Method for fabricating nitride read only memory
US6940125B2 (en) * 2002-08-19 2005-09-06 Silicon Storage Technology, Inc. Vertical NROM and methods for making thereof
US6610586B1 (en) * 2002-09-04 2003-08-26 Macronix International Co., Ltd. Method for fabricating nitride read-only memory
DE10241173A1 (en) * 2002-09-05 2004-03-11 Infineon Technologies Ag Semiconductor memory with vertical memory transistors in a cell array arrangement with 1-2F2 cells
US7050330B2 (en) * 2003-12-16 2006-05-23 Micron Technology, Inc. Multi-state NROM device

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5617351A (en) * 1992-03-12 1997-04-01 International Business Machines Corporation Three-dimensional direct-write EEPROM arrays and fabrication methods
US5768192A (en) * 1996-07-23 1998-06-16 Saifun Semiconductors, Ltd. Non-volatile semiconductor memory cell utilizing asymmetrical charge trapping
US6114725A (en) * 1997-01-22 2000-09-05 International Business Machines Corporation Structure for folded architecture pillar memory cell

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