WO2004004927A8 - Nanostructures and methods for manufacturing the same - Google Patents

Nanostructures and methods for manufacturing the same

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Publication number
WO2004004927A8
WO2004004927A8 PCT/GB2003/002929 GB0302929W WO2004004927A8 WO 2004004927 A8 WO2004004927 A8 WO 2004004927A8 GB 0302929 W GB0302929 W GB 0302929W WO 2004004927 A8 WO2004004927 A8 WO 2004004927A8
Authority
WO
WIPO (PCT)
Prior art keywords
column
portions
seed particle
nanowhisker
semiconductor
Prior art date
Application number
PCT/GB2003/002929
Other languages
French (fr)
Other versions
WO2004004927A2 (en
Inventor
Lars Ivar Samuelson
Jonas Bjoern Ohlsson
Original Assignee
Btg Int Ltd
Lars Ivar Samuelson
Jonas Bjoern Ohlsson
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Btg Int Ltd, Lars Ivar Samuelson, Jonas Bjoern Ohlsson filed Critical Btg Int Ltd
Priority to CA2491941A priority Critical patent/CA2491941C/en
Priority to JP2004518992A priority patent/JP4948766B2/en
Priority to KR1020057000392A priority patent/KR101147053B1/en
Priority to EP03738327.0A priority patent/EP1525339B1/en
Priority to AU2003244851A priority patent/AU2003244851A1/en
Publication of WO2004004927A2 publication Critical patent/WO2004004927A2/en
Publication of WO2004004927A8 publication Critical patent/WO2004004927A8/en

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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
    • H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
    • H01L31/035209—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures
    • H01L31/035227—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions comprising a quantum structures the quantum structure being quantum wires, or nanorods
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B1/00—Nanostructures formed by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
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    • C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
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    • C30B25/183—Epitaxial-layer growth characterised by the substrate being provided with a buffer layer, e.g. a lattice matching layer
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    • Y10S977/763—Nanowire or quantum wire, i.e. axially elongated structure having two dimensions of 100 nm or less formed along or from crystallographic terraces or ridges

Abstract

A resonant tunneling diode, and other one dimensional electronic, photonic structures, and electromechanical MEMS devices, are formed as a heterostructure in a nanowhisker by forming length segments of the whisker with different materials having different band gaps. Thus a resonant tunneling diode comprises a nanowhisker having a seed particle melt at one end, and a column of a constant diameter with a nanometer dimension, such as to exhibit quantum confinement effects, the column comprising first and second semiconductor portions comprising respectively an emitter and a collector, and, disposed between the first and second semiconductor portions, third and fourth portions of material having a different band gap from that of the first and second semiconductor portions, and a fifth central portion of a semiconductor material having a different band gap from that of the third and fourth portions, disposed between the third and fourth portions and forming a quantum weil. The RTD is made by a method including depositing a seed particle on a substrate, and exposing the seed particle to materials under controlled conditions of temperature and pressure such as to form a melt with the seed particle, so that the seed particle rises on top of a column whereby to form a nanowhisker, the column of the nanowhisker having a constant diameter of a nanometer dimension; during the growth of the column, selectively changing the compositions of said gases whereby to abruptly change the composition of the material of the column at regions along its length, whilst retaining epitaxial growth, wherein lattice mismatch between the materials of the portions is accommodated by radial outward bulging of the whisker at the boundaries.
PCT/GB2003/002929 2002-07-08 2003-07-08 Nanostructures and methods for manufacturing the same WO2004004927A2 (en)

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