WO2004013861A3 - Magnetic element utilizing spin transfer and an mram device using the magnetic element - Google Patents

Magnetic element utilizing spin transfer and an mram device using the magnetic element Download PDF

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Publication number
WO2004013861A3
WO2004013861A3 PCT/US2003/024627 US0324627W WO2004013861A3 WO 2004013861 A3 WO2004013861 A3 WO 2004013861A3 US 0324627 W US0324627 W US 0324627W WO 2004013861 A3 WO2004013861 A3 WO 2004013861A3
Authority
WO
WIPO (PCT)
Prior art keywords
layer
magnetic element
pinned
magnetization
ferromagnetic
Prior art date
Application number
PCT/US2003/024627
Other languages
French (fr)
Other versions
WO2004013861A2 (en
Inventor
Yiming Huai
Paul P Nguyen
Original Assignee
Grandis Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Grandis Inc filed Critical Grandis Inc
Priority to JP2004526064A priority Critical patent/JP2005535125A/en
Priority to DE60309190T priority patent/DE60309190T2/en
Priority to AU2003258117A priority patent/AU2003258117A1/en
Priority to EP03767253A priority patent/EP1552526B1/en
Publication of WO2004013861A2 publication Critical patent/WO2004013861A2/en
Publication of WO2004013861A3 publication Critical patent/WO2004013861A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F10/00—Thin magnetic films, e.g. of one-domain structure
    • H01F10/32—Spin-exchange-coupled multilayers, e.g. nanostructured superlattices
    • H01F10/324—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer
    • H01F10/3263—Exchange coupling of magnetic film pairs via a very thin non-magnetic spacer, e.g. by exchange with conduction electrons of the spacer the exchange coupling being symmetric, e.g. for dual spin valve, e.g. NiO/Co/Cu/Co/Cu/Co/NiO
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y25/00—Nanomagnetism, e.g. magnetoimpedance, anisotropic magnetoresistance, giant magnetoresistance or tunneling magnetoresistance
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01F—MAGNETS; INDUCTANCES; TRANSFORMERS; SELECTION OF MATERIALS FOR THEIR MAGNETIC PROPERTIES
    • H01F41/00—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties
    • H01F41/14—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates
    • H01F41/30—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE]
    • H01F41/302—Apparatus or processes specially adapted for manufacturing or assembling magnets, inductances or transformers; Apparatus or processes specially adapted for manufacturing materials characterised by their magnetic properties for applying magnetic films to substrates for applying nanostructures, e.g. by molecular beam epitaxy [MBE] for applying spin-exchange-coupled multilayers, e.g. nanostructured superlattices

Abstract

A method and system for providing a magnetic element (100) capable of being written using spin-transfer effect while generating a high output signal and a magnetic memory using the magnetic element (100) are disclosed. The magnetic element (100) includes a first ferromagnetic pinned layer (104), a nonmagnetic spacer layer (106), a ferromagnetic free layer (108), an insulating barrier layer (110) and a second ferromagnetic pinned layer (112). The pinned layer (104) has a magnetization pinned in a first direction. The nonmagnetic spacer layer (106) is conductive and is between the first pinned layer (104) and the free layer (108). The barrier layer (110) resides between the free layer (108) and the second pinned layer (112) and is an insulator having a thickness allowing o electron tunneling through the barrier layer (110). The second pinned laye (112) has a magnetization pinned in a second direction. The magnetic element (100) is configured to allow the magnetization of the free layer (108) to change direction due to spin transfer when a write current is passed through the magnetic element (100).
PCT/US2003/024627 2002-08-06 2003-08-06 Magnetic element utilizing spin transfer and an mram device using the magnetic element WO2004013861A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004526064A JP2005535125A (en) 2002-08-06 2003-08-06 Magnetic element using spin transfer and MRAM device using magnetic element
DE60309190T DE60309190T2 (en) 2002-08-06 2003-08-06 MAGNETIC ELEMENT WITH SPINTRANSFER AND MRAM ELEMENT WITH THE MAGNETIC ELEMENT
AU2003258117A AU2003258117A1 (en) 2002-08-06 2003-08-06 Magnetic element utilizing spin transfer and an mram device using the magnetic element
EP03767253A EP1552526B1 (en) 2002-08-06 2003-08-06 Magnetic element utilizing spin transfer and an mram device using the magnetic element

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/213,537 US6714444B2 (en) 2002-08-06 2002-08-06 Magnetic element utilizing spin transfer and an MRAM device using the magnetic element
US10/213,537 2002-08-06

Publications (2)

Publication Number Publication Date
WO2004013861A2 WO2004013861A2 (en) 2004-02-12
WO2004013861A3 true WO2004013861A3 (en) 2004-04-22

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/024627 WO2004013861A2 (en) 2002-08-06 2003-08-06 Magnetic element utilizing spin transfer and an mram device using the magnetic element

Country Status (6)

Country Link
US (3) US6714444B2 (en)
EP (1) EP1552526B1 (en)
JP (1) JP2005535125A (en)
AU (1) AU2003258117A1 (en)
DE (1) DE60309190T2 (en)
WO (1) WO2004013861A2 (en)

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