WO2004013893B1 - Piezo electric on seminconductor on- insulator resonator - Google Patents

Piezo electric on seminconductor on- insulator resonator

Info

Publication number
WO2004013893B1
WO2004013893B1 PCT/US2003/024051 US0324051W WO2004013893B1 WO 2004013893 B1 WO2004013893 B1 WO 2004013893B1 US 0324051 W US0324051 W US 0324051W WO 2004013893 B1 WO2004013893 B1 WO 2004013893B1
Authority
WO
WIPO (PCT)
Prior art keywords
approximately
semiconductor
ranges
mega
megahertz
Prior art date
Application number
PCT/US2003/024051
Other languages
French (fr)
Other versions
WO2004013893A3 (en
WO2004013893A2 (en
Inventor
Farrokh Ayazi
Gianluca Piazza
Reza Abdolvand
Gavin Kar-Fai Ho
Shweta Humad
Original Assignee
Georgia Tech Res Inst
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Georgia Tech Res Inst filed Critical Georgia Tech Res Inst
Priority to AU2003263841A priority Critical patent/AU2003263841A1/en
Publication of WO2004013893A2 publication Critical patent/WO2004013893A2/en
Publication of WO2004013893A3 publication Critical patent/WO2004013893A3/en
Publication of WO2004013893B1 publication Critical patent/WO2004013893B1/en

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
    • H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
    • H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
    • H03H2003/027—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks the resonators or networks being of the microelectro-mechanical [MEMS] type
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
    • H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
    • H03H9/02—Details
    • H03H2009/02165—Tuning
    • H03H2009/02173—Tuning of film bulk acoustic resonators [FBAR]
    • H03H2009/02188—Electrically tuning
    • H03H2009/02196—Electrically tuning operating on the FBAR element, e.g. by direct application of a tuning DC voltage

Abstract

A piezoelectric resonator (205) is disclosed. In one embodiment the piezo electric resonator includes a semiconductor material (206) an electrode (210) and a piezo electric material (208) disposed between the semiconductor material and the electrode.

Claims

AMENDED CLAIMS[received by the International Bureau on 28 May 2004 (28.05.2004); original claims 1, 2, 4-8, 10 amended; remaining claims unchanged (3 pages)]+STATEMENTCLAIMSTherefore, having thus described the invention, at least the following is claimed:
1. A method of fabricating a piezoelectric resonator from a semiconductor-on- insulator substrate, the method including: forming trenches (401) in a semiconductor layer of the semiconductor-on- insulator substrate; removing an oxide layer (403) from the semiconductor-on-insulator substrate; applying a piezoelectric material (405) to the semiconductor layer; and providing an electrode (409) to the piezoelectric material.
2. The method of claim 1, further including patterning the piezoelectric material (407).
3. The method of claim 1, wherein the forming, applying, and providing includes a three-mask process that occurs at a temperature of less than 250 C.
4. A piezoelectric resonator (200), including: a resonating member (205) having an adjustable resonance frequency, said resonating member including: a semiconductor material (206) of a semiconductor-on-insulator wafer (206, 204); an electrode (210); and a piezoelectric material (208) disposed between the semiconductor material and the electrode.
5. The piezoelectric resonator of claim 4, wherein the semi-conductor-on-insulator wafer includes: an oxide layer (204) adjacent to the semiconductor material.
6. The piezoelectric resonator of claim 5, further including a capacitor created by the semiconductor material, a handle layer, and a gap formed from the oxide layer and disposed between the semiconductor layer and the handle layer, wherein the capacitor is configured to receive a direct current voltage that adjusts the resonance frequency of the resonating member.
7. The piezoelectric resonator of claim 4, further including, in response to an excitation force applied to the resonating member, at least one of a quality factor for a beam configuration that ranges between approximately 2400-6200 for resonance frequencies ranging between approximately 1.72 megahertz -6.7 mega-hertz, a quality factor for a beam configuration that ranges between approximately 3000-6200 for resonance frequencies ranging between approximately 1.72 megahertz - 4.87 mega-hertz, a quality factor for a beam configuration that ranges between approximately 5300-6200 for resonance frequencies ranging between approximately 1.72 megahertz -3.29 mega- hertz, and a quality factor for a beam configuration that ranges between approximately 5400-6200 for resonance frequencies ranging between approximately .721 megahertz - 1.72 mega-hertz.
8. The piezoelectric resonator of claim 4, further including, in response to an excitation force applied to the resonating member, at least one of a quality factor for a block configuration that ranges between approximately 5500-11,600 for resonance frequencies ranging between approximately 16.9 megahertz - 195 mega-hertz, a quality factor for a block configuration that ranges between approximately 4700-11 ,600 for resonance frequencies ranging between approximately 16.9 megahertz - 195 mega-hertz, and a quality factor for a block configuration that ranges between approximately 4500- 11,600 for resonance frequencies ranging between approximately 16.9 megahertz - 195 mega-hertz.
9. The piezoelectric resonator of claim 4, wherein the thickness of the semiconductor material ranges between approximately 0.2-30 microns.
10. The piezoelectric resonator of claim 4, wherein the resonating member includes a resonance frequency resulting from at least one of in-plane and out-of-plane movement of the resonating member.
PCT/US2003/024051 2002-08-01 2003-07-31 Piezo electric on seminconductor on- insulator resonator WO2004013893A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003263841A AU2003263841A1 (en) 2002-08-01 2003-07-31 Piezo electric on seminconductor on- insulator resonator

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US40003002P 2002-08-01 2002-08-01
US60/400,030 2002-08-01
US10/631,948 2003-07-31
US10/631,948 US6909221B2 (en) 2002-08-01 2003-07-31 Piezoelectric on semiconductor-on-insulator microelectromechanical resonators

Publications (3)

Publication Number Publication Date
WO2004013893A2 WO2004013893A2 (en) 2004-02-12
WO2004013893A3 WO2004013893A3 (en) 2004-07-15
WO2004013893B1 true WO2004013893B1 (en) 2004-12-16

Family

ID=31191341

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/024051 WO2004013893A2 (en) 2002-08-01 2003-07-31 Piezo electric on seminconductor on- insulator resonator

Country Status (3)

Country Link
US (1) US6909221B2 (en)
AU (1) AU2003263841A1 (en)
WO (1) WO2004013893A2 (en)

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US6909221B2 (en) 2005-06-21
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WO2004013893A2 (en) 2004-02-12
AU2003263841A1 (en) 2004-02-23

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