WO2004015745A3 - A dmos device with a programmable threshold voltage - Google Patents

A dmos device with a programmable threshold voltage Download PDF

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Publication number
WO2004015745A3
WO2004015745A3 PCT/US2003/025108 US0325108W WO2004015745A3 WO 2004015745 A3 WO2004015745 A3 WO 2004015745A3 US 0325108 W US0325108 W US 0325108W WO 2004015745 A3 WO2004015745 A3 WO 2004015745A3
Authority
WO
WIPO (PCT)
Prior art keywords
electrode
threshold voltage
floating gate
dmos device
programmable threshold
Prior art date
Application number
PCT/US2003/025108
Other languages
French (fr)
Other versions
WO2004015745A2 (en
Inventor
Richard A Blanchard
Original Assignee
Gen Semiconductor Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from US10/218,010 external-priority patent/US6734495B2/en
Priority claimed from US10/217,893 external-priority patent/US6882573B2/en
Application filed by Gen Semiconductor Inc filed Critical Gen Semiconductor Inc
Priority to EP03751848A priority Critical patent/EP1550150A4/en
Priority to CN038241536A priority patent/CN1692449B/en
Priority to JP2004528026A priority patent/JP2005536048A/en
Priority to AU2003269956A priority patent/AU2003269956A1/en
Publication of WO2004015745A2 publication Critical patent/WO2004015745A2/en
Publication of WO2004015745A3 publication Critical patent/WO2004015745A3/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
    • H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
    • H01L29/42312—Gate electrodes for field effect devices
    • H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
    • H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
    • H01L29/42324—Gate electrodes for transistors with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66825—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a floating gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7801—DMOS transistors, i.e. MISFETs with a channel accommodating body or base region adjoining a drain drift region
    • H01L29/7802—Vertical DMOS transistors, i.e. VDMOS transistors
    • H01L29/7813—Vertical DMOS transistors, i.e. VDMOS transistors with trench gate electrode, e.g. UMOS transistors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7883—Programmable transistors with only two possible levels of programmation charging by tunnelling of carriers, e.g. Fowler-Nordheim tunnelling
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B41/00—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates
    • H10B41/30—Electrically erasable-and-programmable ROM [EEPROM] devices comprising floating gates characterised by the memory core region
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices

Abstract

A DMOS device is provided which is equipped with a floating gate (45) having a first (49) and second electrode (51) in close proximity thereto. The floating gate (45) is separated from one of the first (49) and second (51) electrode by a thin layer of dielectric material (53) whose dimensions and composition permit charge carriers to tunnel through the dielectric layer (53) either to or from the floating gate (45). This tunneling phenomenon can be used to create a threshold voltage that may be adjust to provide a precise current by placing a voltage between a programming electrode and the body/source and gate electrode of the device.
PCT/US2003/025108 2002-08-13 2003-08-11 A dmos device with a programmable threshold voltage WO2004015745A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
EP03751848A EP1550150A4 (en) 2002-08-13 2003-08-11 A dmos device with a programmable threshold voltage
CN038241536A CN1692449B (en) 2002-08-13 2003-08-11 DMOS device with a programmable threshold voltage
JP2004528026A JP2005536048A (en) 2002-08-13 2003-08-11 DMOS device with programmable threshold voltage
AU2003269956A AU2003269956A1 (en) 2002-08-13 2003-08-11 A dmos device with a programmable threshold voltage

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US10/218,010 US6734495B2 (en) 2002-08-13 2002-08-13 Two terminal programmable MOS-gated current source
US10/217,893 US6882573B2 (en) 2002-08-13 2002-08-13 DMOS device with a programmable threshold voltage
US10/218,010 2002-08-13
US10/217,893 2002-08-13

Publications (2)

Publication Number Publication Date
WO2004015745A2 WO2004015745A2 (en) 2004-02-19
WO2004015745A3 true WO2004015745A3 (en) 2004-04-29

Family

ID=31720179

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/025108 WO2004015745A2 (en) 2002-08-13 2003-08-11 A dmos device with a programmable threshold voltage

Country Status (6)

Country Link
EP (1) EP1550150A4 (en)
JP (1) JP2005536048A (en)
KR (1) KR20050056200A (en)
AU (1) AU2003269956A1 (en)
TW (1) TWI320232B (en)
WO (1) WO2004015745A2 (en)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100881015B1 (en) * 2006-11-30 2009-01-30 동부일렉트로닉스 주식회사 Semiconductor device and method for fabricating the same
JP5272472B2 (en) * 2008-03-28 2013-08-28 サンケン電気株式会社 Semiconductor device
CN112864234B (en) * 2019-11-27 2022-04-15 苏州东微半导体股份有限公司 IGBT power device
CN112885900B (en) * 2019-11-29 2022-04-15 苏州东微半导体股份有限公司 IGBT device
CN112885827B (en) * 2019-11-29 2022-04-15 苏州东微半导体股份有限公司 Semiconductor super-junction power device

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5910925A (en) * 1992-01-14 1999-06-08 Sandisk Corporation EEPROM with split gate source side injection
US5963480A (en) * 1988-06-08 1999-10-05 Harari; Eliyahou Highly compact EPROM and flash EEPROM devices

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DE3007892C2 (en) * 1980-03-01 1982-06-09 Deutsche Itt Industries Gmbh, 7800 Freiburg Floating gate memory cell
EP0205637A1 (en) * 1985-06-25 1986-12-30 Eaton Corporation Trapped charge bidirectional power fet
JPS6129177A (en) * 1984-07-19 1986-02-10 Seiko Instr & Electronics Ltd Semiconductor nonvolatile memory
US4589009A (en) * 1984-10-09 1986-05-13 The United States Of America As Represented By The Secretary Of The Army Non-volatile piezoelectric memory transistor
JP2654384B2 (en) * 1987-09-18 1997-09-17 株式会社日立製作所 High power semiconductor device with nonvolatile memory
JPH022177A (en) * 1988-06-14 1990-01-08 Sharp Corp Field effect transistor with floating gate
JP3367255B2 (en) * 1995-03-08 2003-01-14 株式会社デンソー Semiconductor device and manufacturing method thereof
US5633518A (en) * 1995-07-28 1997-05-27 Zycad Corporation Nonvolatile reprogrammable interconnect cell with FN tunneling and programming method thereof
JP3371708B2 (en) * 1996-08-22 2003-01-27 ソニー株式会社 Manufacturing method of vertical field effect transistor
DE69832019T2 (en) * 1997-09-09 2006-07-20 Interuniversitair Micro-Electronica Centrum Vzw Method for erasing and programming a memory in low-voltage applications and low-power applications
JP2000232171A (en) * 1999-02-10 2000-08-22 Nec Kyushu Ltd Semiconductor device and its manufacture
JP2001035942A (en) * 1999-07-22 2001-02-09 Toyota Central Res & Dev Lab Inc Non-volatile semiconductor memory device
DE19941684B4 (en) * 1999-09-01 2004-08-26 Infineon Technologies Ag Semiconductor component as a delay element
JP4277381B2 (en) * 1999-09-21 2009-06-10 株式会社デンソー Silicon carbide semiconductor device and manufacturing method thereof

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5963480A (en) * 1988-06-08 1999-10-05 Harari; Eliyahou Highly compact EPROM and flash EEPROM devices
US5910925A (en) * 1992-01-14 1999-06-08 Sandisk Corporation EEPROM with split gate source side injection
US5910915A (en) * 1992-01-14 1999-06-08 Sandisk Corporation EEPROM with split gate source side injection

Also Published As

Publication number Publication date
JP2005536048A (en) 2005-11-24
WO2004015745A2 (en) 2004-02-19
TWI320232B (en) 2010-02-01
AU2003269956A1 (en) 2004-02-25
AU2003269956A8 (en) 2004-02-25
TW200405571A (en) 2004-04-01
KR20050056200A (en) 2005-06-14
EP1550150A4 (en) 2009-08-19
EP1550150A2 (en) 2005-07-06

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