WO2004017439A2 - Elektronisches bauteil mit vorwiegend organischen funktionsmaterialien und herstellungsverfahren dazu - Google Patents
Elektronisches bauteil mit vorwiegend organischen funktionsmaterialien und herstellungsverfahren dazu Download PDFInfo
- Publication number
- WO2004017439A2 WO2004017439A2 PCT/DE2003/002303 DE0302303W WO2004017439A2 WO 2004017439 A2 WO2004017439 A2 WO 2004017439A2 DE 0302303 W DE0302303 W DE 0302303W WO 2004017439 A2 WO2004017439 A2 WO 2004017439A2
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- electronic component
- component according
- functional layer
- sectional profile
- cross
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/60—Forming conductive regions or layers, e.g. electrodes
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/80—Interconnections, e.g. terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
- H10K85/1135—Polyethylene dioxythiophene [PEDOT]; Derivatives thereof
Definitions
- the invention relates to an electronic component with predominantly organic functional materials with improved through-plating.
- the object of the invention is therefore to create a process which is compatible with mass production for producing at least one via, which takes into account the properties of the sensitive thin layers of organic material.
- the object of the invention is therefore an electronic component with predominantly organic functional layers, which has at least one through-hole whose cross-sectional profile is so characteristic that it can be seen from the fact that at least one lower layer was treated locally before the application of at least one middle functional layer.
- the invention also relates to a method for producing at least one plated-through hole of an electronic component made of predominantly organic material, in which the plated-through hole is formed before the insulating layer is applied.
- vias have always been formed by subsequently making holes in existing layers by drilling, etching away or conventional methods of non-crosslinking such as lithography, etc., which are then filled with conductive material to form the via. This usually results in a constant cross-section of the via formed, which is characteristic and easily recognizable on the finished product by means of a cross-sectional profile.
- the plated-through hole (VIAS) on the substrate, the conductive and / or The semiconducting layer, at least in front of the layer to be contacted, that is to say generally the insulating layer, is provided with vias which, at least according to some embodiments, have a cross-sectional profile that tapers from bottom to top, comparable to a truncated cone.
- the contours of the vias usually also have a shape that is typical of the type of production, for example printing.
- the subsequent through-contact layers largely adapt to this shape around the vias.
- the contour shape - microscopically - is not sharply drawn and / or even jagged, whereas the contours of the conventional vias which can be obtained by subsequent drilling generally have sharp contours.
- the vias are formed in the form of free-standing elevations.
- the plated-through hole occurs only when the thin and / or insulating layer is applied. It is advantageous if the surface of the vias is rough for later contact with the upper conductor.
- the insulating layer (s) is a (thin) film (s)
- the vias are automatically created because the film is made of organic material at the vias, even if the bump is not the entire thickness of the layer is high, breaks open.
- An electrical connection between the different levels of an electronic component can be produced through the holes thus produced in the insulating film. Either the holes can only be filled with a conductive medium afterwards, or the vias first applied are already conductive.
- the vias are applied in front of the middle functional layer, that is to say generally an insulating layer, and the sensitive, preferably structured, layers are thus spared by the process of the plated-through hole.
- organic material or “functional material” or ⁇ (functional) polymer “here encompasses all types of organic, organometallic and / or organic-inorganic plastics (hybrids), in particular those which are referred to in English as” plastics " These are all types of substances with the exception of the semiconductors that form the classic transistors (germanium, silicon) and the typical metallic conductors. There is therefore no restriction in the dogmatic sense to organic material as carbon-containing material, the term is also intended to be widely used, for example silicones, and the term should not be subject to any restriction with regard to the molecular size, in particular to polymeric and / or oligomeric materials, but the use of "small molecules” is also entirely possible.
- the word component "polymer” in the functional polymer is historical and therefore contains no information about it s presence of an actually polymeric compound.
- FIG. 1 shows a carrier substrate (e.g. a PET film) 1 with the corresponding lower conductor tracks 2 (e.g. gold, polyaniline, PEDOT, carbon black, graphite, conductive silver).
- a carrier substrate e.g. a PET film
- the corresponding lower conductor tracks 2 e.g. gold, polyaniline, PEDOT, carbon black, graphite, conductive silver.
- FIG. 1 shows the structure of Figure 1, the free-standing
- the via 3 has been applied, for example, by a printing technique and / or lithographically. Any production method that produces such a via 3 on a lower layer 2 is conceivable.
- the via 3 consists for example of polyaniline, PEDOT, carbon black, graphite, conductive silver. But it can also be made of another conductive or non-conductive material.
- the shape of this via 3 can be, for example, tower-shaped with a shape that tapers from bottom to top. The surface can have a certain roughness, which supports subsequent contacting. Since the substrate 1 and the conductor track (s) 2 generally have a high level of mechanical stability, a mass production process can be used without problems for the production of the via 3.
- FIG. 3 again shows the same structure in another process stage, where two further layers 4 and 5 have already been applied, which may consist of semiconducting or insulating material.
- the semiconductor comes e.g. in question: polyalkylthiophene or polyfluorene, as an insulator e.g. Polyhydroxystyrene, poly ethyl methacrylate or polystyrene.
- the through-hole 3 penetrates the two middle functional layers 4, 5 due to its size and / or its nature and thus forms the desired contact.
- the upper conductor track 6 can be seen on the structure known from the other figures and it can be seen that through-contacting 3 leads to a conductive connection between the lower conductor track 2 and the upper one. Conductor 6 comes about.
- FIG. 5 shows the same layer structure as from FIGS. 1-3, only that in FIG. 5 the two functional layers 4, 5 are limited to one layer 4.
- FIG. 6 shows two such structures as shown in FIG. 5, one structure being rotated by 180 degrees, so that the respective plated-through holes 3 face each other.
- both the respective functional layers 4, 5 and the respective vias form a unit and establish the defined electrical connection.
- the shape of the resulting through-contact 3, which can be seen in the cross-sectional profile, is here a hyperboloid, that is to say the shape of two “head-head * linked truncated cones”.
- FIG. 1 Another way of producing the through-contact is shown in FIG.
- a defined defect 7 has been applied to the lower conductor track 2. This can consist of both conductive and insulating material. Furthermore, the fault location 7 may have arisen from a local chemical or physical treatment.
- the through contact 3 is formed by tearing open the functional layer (s) 4 at the defect 7 and subsequently filling the area around the defect 7 with conductive material of the upper conductor 6.
- the impurity 7 causes the subsequently applied middle functional layer (s) 4, 5 to tear open and / or is absent due to non-wetting or in some other way, so that an area around the impurity 7 arises in which the lower layer 2 to be contacted is exposed when the upper layer 6 to be contacted is formed.
- the contacting of the conductive layer 2 with the conductive layer 6 works in that the exposed area on the layer 2 is larger than the defect 7. Therefore, the defect 7 can consist of both conductive and insulating material.
- the via 3 is thus produced in such a way that when the semiconductor and insulator layer is applied, the lower conductor layer 2 in FIG. 1 is not locally wetted. This means that holes are deliberately created in the layers to be contacted at the location of the vias. The actual plated-through hole 3 then takes place by filling these holes with conductive material of the upper conductor track 6. This happens, for example, automatically when the gate level is applied.
- the local non-wetting can also occur in such a way that a disturbance is deliberately created there, at which the film tears open and thus forms a hole.
- the disorder can be a - • be applied material, the natural form of the material (particles) or in the form produced (peak) the production process of tearing supported - by printing.
- Another possibility for local non-wetting involves changing the physical / chemical properties of the surface there.
- the changed physical / chemical properties can be, for example, an increased surface energy, which means that there is no wetting of this area from the start, which in turn has the same effect, namely the formation of holes.
- the increased surface energy is possible, for example, by printing a chemical solution (solvent, acid, base, a reactive compound) and then removing and / or evaporating independently.
- a physical (local) treatment of the lower functional layer can e.g. by roughening, laser radiation, plasma treatment (e.g. corona), UV radiation, IR radiation and / or thermal treatment.
- the tip of the elevation can “pierce” through the functional layer or can be shorter than the thickness of the functional layer, that is to say a simple elevation that does not pass through the functional layer.
- the conductive components lower and upper layer / conductor tracks 2 and 6) are brought into contact by pressure anyway, because the intermediate layers 4, 5 are comparatively thin.
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Fixed Capacitors And Capacitor Manufacturing Machines (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
- Formation Of Insulating Films (AREA)
Abstract
Description
Claims
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03787642A EP1525630A2 (de) | 2002-07-29 | 2003-07-09 | Elektronisches bauteil mit vorwiegend organischen funktionsmaterialien und herstellungsverfahren dazu |
US10/523,216 US8044517B2 (en) | 2002-07-29 | 2003-07-09 | Electronic component comprising predominantly organic functional materials and a method for the production thereof |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10234646 | 2002-07-29 | ||
DE10234646.1 | 2002-07-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004017439A2 true WO2004017439A2 (de) | 2004-02-26 |
WO2004017439A3 WO2004017439A3 (de) | 2004-06-10 |
Family
ID=31724053
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/DE2003/002303 WO2004017439A2 (de) | 2002-07-29 | 2003-07-09 | Elektronisches bauteil mit vorwiegend organischen funktionsmaterialien und herstellungsverfahren dazu |
Country Status (3)
Country | Link |
---|---|
US (1) | US8044517B2 (de) |
EP (1) | EP1525630A2 (de) |
WO (1) | WO2004017439A2 (de) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6940408B2 (en) | 2002-12-31 | 2005-09-06 | Avery Dennison Corporation | RFID device and method of forming |
US8072333B2 (en) | 2002-12-31 | 2011-12-06 | Avery Dennison Corporation | RFID device and method of forming |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE10043204A1 (de) * | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
US9306105B2 (en) * | 2013-07-31 | 2016-04-05 | First Solar Malaysia Sdn. Bhd. | Finger structures protruding from absorber layer for improved solar cell back contact |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5480839A (en) * | 1993-01-15 | 1996-01-02 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method |
WO2001047044A2 (en) * | 1999-12-21 | 2001-06-28 | Plastic Logic Limited | Forming interconnects |
US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
US20020025391A1 (en) * | 1989-05-26 | 2002-02-28 | Marie Angelopoulos | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
WO2002095805A2 (en) * | 2001-05-23 | 2002-11-28 | Plastic Logic Limited | Laser parrering of devices |
Family Cites Families (190)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US18911A (en) * | 1857-12-22 | Glass knob for doors | ||
US542679A (en) * | 1895-07-16 | Coin-controlled telephone | ||
US112576A (en) * | 1871-03-14 | Improvement in needles and holders for sewing-machines | ||
US170897A (en) * | 1875-12-07 | Improvement in feeding-belts and partitions for corn-shellers | ||
US56839A (en) * | 1866-07-31 | Improvement in corn-planters | ||
US344926A (en) * | 1886-07-06 | Stevens | ||
US533756A (en) * | 1895-02-05 | Corn-harvester | ||
US535449A (en) * | 1895-03-12 | ltjnken | ||
US195644A (en) * | 1877-09-25 | Improvement in motors for operating crosscut-saws | ||
US130042A (en) * | 1872-07-30 | Improvement in devices for propelling vessels | ||
US59987A (en) * | 1866-11-27 | Henry a | ||
US543561A (en) * | 1895-07-30 | Heating-stove | ||
US541815A (en) * | 1895-06-25 | Building-block | ||
US541956A (en) * | 1895-07-02 | Joseph benfield | ||
US534448A (en) * | 1895-02-19 | Speed-pulley | ||
US2176A (en) * | 1841-07-16 | Improvement in the manufacture of indelible writing-ink | ||
US68392A (en) * | 1867-09-03 | James p | ||
US523487A (en) * | 1894-07-24 | Ore-roasting furnace | ||
US541957A (en) * | 1895-07-02 | Nose-piece for eyeglasses | ||
US542678A (en) * | 1895-07-16 | Wheel | ||
US523216A (en) * | 1894-07-17 | Logging system | ||
GB723598A (en) | 1951-09-07 | 1955-02-09 | Philips Nv | Improvements in or relating to methods of producing electrically conductive mouldings from plastics |
US3512052A (en) | 1968-01-11 | 1970-05-12 | Gen Motors Corp | Metal-insulator-semiconductor voltage variable capacitor with controlled resistivity dielectric |
US3769096A (en) | 1971-03-12 | 1973-10-30 | Bell Telephone Labor Inc | Pyroelectric devices |
JPS543594B2 (de) | 1973-10-12 | 1979-02-24 | ||
JPS54101176A (en) | 1978-01-26 | 1979-08-09 | Shinetsu Polymer Co | Contact member for push switch |
US4442019A (en) | 1978-05-26 | 1984-04-10 | Marks Alvin M | Electroordered dipole suspension |
DE2932075C2 (de) * | 1979-08-08 | 1986-04-10 | Barmag Barmer Maschinenfabrik Ag, 5630 Remscheid | Friktionsfalschdraller |
JPS5641938U (de) | 1979-09-10 | 1981-04-17 | ||
US4340657A (en) | 1980-02-19 | 1982-07-20 | Polychrome Corporation | Novel radiation-sensitive articles |
JPS59145576A (ja) | 1982-11-09 | 1984-08-21 | ザイトレツクス・コ−ポレ−シヨン | プログラム可能なmosトランジスタ |
DE3321071A1 (de) | 1983-06-10 | 1984-12-13 | Basf Ag | Druckschalter |
DE3338597A1 (de) | 1983-10-24 | 1985-05-02 | GAO Gesellschaft für Automation und Organisation mbH, 8000 München | Datentraeger mit integriertem schaltkreis und verfahren zur herstellung desselben |
JPS60117769A (ja) | 1983-11-30 | 1985-06-25 | Fujitsu Ltd | 半導体メモリ装置 |
US4996584A (en) * | 1985-01-31 | 1991-02-26 | Gould, Inc. | Thin-film electrical connections for integrated circuits |
JPS61258453A (ja) * | 1985-05-13 | 1986-11-15 | Toshiba Corp | 半導体装置の製造方法 |
EP0239808B1 (de) | 1986-03-03 | 1991-02-27 | Kabushiki Kaisha Toshiba | Strahlungsdetektor |
EP0268370B1 (de) | 1986-10-13 | 1995-06-28 | Canon Kabushiki Kaisha | Schaltungselement |
JP2728412B2 (ja) | 1987-12-25 | 1998-03-18 | 株式会社日立製作所 | 半導体装置 |
GB2215307B (en) | 1988-03-04 | 1991-10-09 | Unisys Corp | Electronic component transportation container |
DE68912426T2 (de) | 1988-06-21 | 1994-05-11 | Gec Avery Ltd | Herstellung von tragbaren elektronischen Karten. |
US5364735A (en) | 1988-07-01 | 1994-11-15 | Sony Corporation | Multiple layer optical record medium with protective layers and method for producing same |
US4937119A (en) | 1988-12-15 | 1990-06-26 | Hoechst Celanese Corp. | Textured organic optical data storage media and methods of preparation |
US5892244A (en) | 1989-01-10 | 1999-04-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor |
EP0418504B1 (de) | 1989-07-25 | 1995-04-05 | Matsushita Electric Industrial Co., Ltd. | Speicherbauelement aus organischem Halbleiter mit einer MISFET-Struktur und sein Kontrollverfahren |
US5206525A (en) | 1989-12-27 | 1993-04-27 | Nippon Petrochemicals Co., Ltd. | Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials |
FI91573C (sv) | 1990-01-04 | 1994-07-11 | Neste Oy | Sätt att framställa elektroniska och elektro-optiska komponenter och kretsar |
JP2969184B2 (ja) | 1990-04-09 | 1999-11-02 | カシオ計算機株式会社 | 薄膜トランジスタメモリ |
JPH0710030B2 (ja) * | 1990-05-18 | 1995-02-01 | インターナシヨナル・ビジネス・マシーンズ・コーポレーシヨン | 多層配線基板の製造方法 |
FR2664430B1 (fr) | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
US5128746A (en) * | 1990-09-27 | 1992-07-07 | Motorola, Inc. | Adhesive and encapsulant material with fluxing properties |
JPH04279046A (ja) * | 1991-01-11 | 1992-10-05 | Fuji Xerox Co Ltd | 多層配線の形成方法 |
FR2673041A1 (fr) | 1991-02-19 | 1992-08-21 | Gemplus Card Int | Procede de fabrication de micromodules de circuit integre et micromodule correspondant. |
EP0501456A3 (de) | 1991-02-26 | 1992-09-09 | Sony Corporation | Mit eine optischen Plattenantrieb ausgerüsteter Videospielcomputer |
US5408109A (en) | 1991-02-27 | 1995-04-18 | The Regents Of The University Of California | Visible light emitting diodes fabricated from soluble semiconducting polymers |
US5332315A (en) | 1991-04-27 | 1994-07-26 | Gec Avery Limited | Apparatus and sensor unit for monitoring changes in a physical quantity with time |
JP3224829B2 (ja) | 1991-08-15 | 2001-11-05 | 株式会社東芝 | 有機電界効果型素子 |
JPH0580530A (ja) | 1991-09-24 | 1993-04-02 | Hitachi Ltd | 薄膜パターン製造方法 |
US5173835A (en) | 1991-10-15 | 1992-12-22 | Motorola, Inc. | Voltage variable capacitor |
DE59105477D1 (de) | 1991-10-30 | 1995-06-14 | Fraunhofer Ges Forschung | Belichtungsvorrichtung. |
JP2709223B2 (ja) | 1992-01-30 | 1998-02-04 | 三菱電機株式会社 | 非接触形携帯記憶装置 |
DE4243832A1 (de) | 1992-12-23 | 1994-06-30 | Daimler Benz Ag | Tastsensoranordnung |
CA2109687A1 (en) * | 1993-01-26 | 1995-05-23 | Walter Schmidt | Method for the through plating of conductor foils |
FR2701117B1 (fr) | 1993-02-04 | 1995-03-10 | Asulab Sa | Système de mesures électrochimiques à capteur multizones, et son application au dosage du glucose. |
US5427841A (en) * | 1993-03-09 | 1995-06-27 | U.S. Philips Corporation | Laminated structure of a metal layer on a conductive polymer layer and method of manufacturing such a structure |
EP0615256B1 (de) | 1993-03-09 | 1998-09-23 | Koninklijke Philips Electronics N.V. | Herstellungsverfahren eines Musters von einem elektrisch leitfähigen Polymer auf einer Substratoberfläche und Metallisierung eines solchen Musters |
US5567550A (en) | 1993-03-25 | 1996-10-22 | Texas Instruments Incorporated | Method of making a mask for making integrated circuits |
JPH0722669A (ja) | 1993-07-01 | 1995-01-24 | Mitsubishi Electric Corp | 可塑性機能素子 |
WO1995006240A1 (en) | 1993-08-24 | 1995-03-02 | Metrika Laboratories, Inc. | Novel disposable electronic assay device |
JP3460863B2 (ja) | 1993-09-17 | 2003-10-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
FR2710413B1 (fr) | 1993-09-21 | 1995-11-03 | Asulab Sa | Dispositif de mesure pour capteurs amovibles. |
US5556706A (en) | 1993-10-06 | 1996-09-17 | Matsushita Electric Industrial Co., Ltd. | Conductive layered product and method of manufacturing the same |
IL111151A (en) | 1994-10-03 | 1998-09-24 | News Datacom Ltd | Secure access systems |
CN1106696C (zh) | 1994-05-16 | 2003-04-23 | 皇家菲利浦电子有限公司 | 带有有机半导体材料的半导体器件 |
US5684884A (en) | 1994-05-31 | 1997-11-04 | Hitachi Metals, Ltd. | Piezoelectric loudspeaker and a method for manufacturing the same |
JP3246189B2 (ja) | 1994-06-28 | 2002-01-15 | 株式会社日立製作所 | 半導体表示装置 |
US5574291A (en) | 1994-12-09 | 1996-11-12 | Lucent Technologies Inc. | Article comprising a thin film transistor with low conductivity organic layer |
US5630986A (en) | 1995-01-13 | 1997-05-20 | Bayer Corporation | Dispensing instrument for fluid monitoring sensors |
JP3068430B2 (ja) | 1995-04-25 | 2000-07-24 | 富山日本電気株式会社 | 固体電解コンデンサ及びその製造方法 |
US5652645A (en) | 1995-07-24 | 1997-07-29 | Anvik Corporation | High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates |
JP3313547B2 (ja) * | 1995-08-30 | 2002-08-12 | 沖電気工業株式会社 | チップサイズパッケージの製造方法 |
US5625199A (en) | 1996-01-16 | 1997-04-29 | Lucent Technologies Inc. | Article comprising complementary circuit with inorganic n-channel and organic p-channel thin film transistors |
US6326640B1 (en) | 1996-01-29 | 2001-12-04 | Motorola, Inc. | Organic thin film transistor with enhanced carrier mobility |
GB2310493B (en) | 1996-02-26 | 2000-08-02 | Unilever Plc | Determination of the characteristics of fluid |
DE19629656A1 (de) | 1996-07-23 | 1998-01-29 | Boehringer Mannheim Gmbh | Diagnostischer Testträger mit mehrschichtigem Testfeld und Verfahren zur Bestimmung von Analyt mit dessen Hilfe |
JP2870497B2 (ja) * | 1996-08-01 | 1999-03-17 | 日本電気株式会社 | 半導体素子の実装方法 |
US6103992A (en) * | 1996-11-08 | 2000-08-15 | W. L. Gore & Associates, Inc. | Multiple frequency processing to minimize manufacturing variability of high aspect ratio micro through-vias |
US5946551A (en) | 1997-03-25 | 1999-08-31 | Dimitrakopoulos; Christos Dimitrios | Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric |
US6344662B1 (en) | 1997-03-25 | 2002-02-05 | International Business Machines Corporation | Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages |
KR100248392B1 (ko) | 1997-05-15 | 2000-09-01 | 정선종 | 유기물전계효과트랜지스터와결합된유기물능동구동전기발광소자및그소자의제작방법 |
EP0968537B1 (de) | 1997-08-22 | 2012-05-02 | Creator Technology B.V. | Feld-effekt-transistor, der im wesentlichen aus organischen materialien besteht |
JP2001505003A (ja) * | 1997-08-22 | 2001-04-10 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 薄膜マイクロ電子デバイス間に縦方向相互接続部を形成する方法 |
ES2199705T1 (es) | 1997-09-11 | 2004-03-01 | Prec Dynamics Corp | Transpondor de identificacion con circuito integrado consistente de materiales organicos. |
TW345720B (en) * | 1997-10-08 | 1998-11-21 | Winbond Electronics Corp | Self-aligned via structure and process for producing the same |
US6251513B1 (en) | 1997-11-08 | 2001-06-26 | Littlefuse, Inc. | Polymer composites for overvoltage protection |
JPH11142810A (ja) | 1997-11-12 | 1999-05-28 | Nintendo Co Ltd | 携帯型情報処理装置 |
US5997817A (en) | 1997-12-05 | 1999-12-07 | Roche Diagnostics Corporation | Electrochemical biosensor test strip |
WO1999030432A1 (en) | 1997-12-05 | 1999-06-17 | Koninklijke Philips Electronics N.V. | Identification transponder |
US5998805A (en) | 1997-12-11 | 1999-12-07 | Motorola, Inc. | Active matrix OED array with improved OED cathode |
DE19757542A1 (de) * | 1997-12-23 | 1999-06-24 | Bayer Ag | Siebdruckpaste zur Herstellung elektrisch leitfähiger Beschichtungen |
US6083104A (en) | 1998-01-16 | 2000-07-04 | Silverlit Toys (U.S.A.), Inc. | Programmable toy with an independent game cartridge |
AU739848B2 (en) | 1998-01-28 | 2001-10-18 | Thin Film Electronics Asa | A method for generation of electrical conducting or semiconducting structures in three dimensions and methods for erasure of the same structures |
US6087196A (en) | 1998-01-30 | 2000-07-11 | The Trustees Of Princeton University | Fabrication of organic semiconductor devices using ink jet printing |
US6045977A (en) | 1998-02-19 | 2000-04-04 | Lucent Technologies Inc. | Process for patterning conductive polyaniline films |
DE19816860A1 (de) | 1998-03-06 | 1999-11-18 | Deutsche Telekom Ag | Chipkarte, insbesondere Guthabenkarte |
US6033202A (en) | 1998-03-27 | 2000-03-07 | Lucent Technologies Inc. | Mold for non - photolithographic fabrication of microstructures |
GB9808061D0 (en) | 1998-04-16 | 1998-06-17 | Cambridge Display Tech Ltd | Polymer devices |
GB9808806D0 (en) | 1998-04-24 | 1998-06-24 | Cambridge Display Tech Ltd | Selective deposition of polymer films |
TW410478B (en) | 1998-05-29 | 2000-11-01 | Lucent Technologies Inc | Thin-film transistor monolithically integrated with an organic light-emitting diode |
US5967048A (en) | 1998-06-12 | 1999-10-19 | Howard A. Fromson | Method and apparatus for the multiple imaging of a continuous web |
KR100282393B1 (ko) | 1998-06-17 | 2001-02-15 | 구자홍 | 유기이엘(el)디스플레이소자제조방법 |
DE19836174C2 (de) | 1998-08-10 | 2000-10-12 | Illig Maschinenbau Adolf | Heizung zum Erwärmen von thermoplastischen Kunststoffplatten und Verfahren zum Einstellen der Temperatur dieser Heizung |
US6215130B1 (en) | 1998-08-20 | 2001-04-10 | Lucent Technologies Inc. | Thin film transistors |
PT1108207E (pt) | 1998-08-26 | 2008-08-06 | Sensors For Med & Science Inc | Dispositivos de sensores ópticos |
JP4493741B2 (ja) | 1998-09-04 | 2010-06-30 | 株式会社半導体エネルギー研究所 | 半導体装置の作製方法 |
EP1154471B1 (de) * | 1998-09-30 | 2008-07-16 | Ibiden Co., Ltd. | Halbleiter-chip mit höckerartigen elektroden |
DE19851703A1 (de) | 1998-10-30 | 2000-05-04 | Inst Halbleiterphysik Gmbh | Verfahren zur Herstellung von elektronischen Strukturen |
US6384804B1 (en) | 1998-11-25 | 2002-05-07 | Lucent Techonologies Inc. | Display comprising organic smart pixels |
US6506438B2 (en) | 1998-12-15 | 2003-01-14 | E Ink Corporation | Method for printing of transistor arrays on plastic substrates |
US6321571B1 (en) | 1998-12-21 | 2001-11-27 | Corning Incorporated | Method of making glass structures for flat panel displays |
US6114088A (en) | 1999-01-15 | 2000-09-05 | 3M Innovative Properties Company | Thermal transfer element for forming multilayer devices |
JP3137186B2 (ja) * | 1999-02-05 | 2001-02-19 | インターナショナル・ビジネス・マシーンズ・コーポレ−ション | 層間接続構造体、多層配線基板およびそれらの形成方法 |
GB2347013A (en) | 1999-02-16 | 2000-08-23 | Sharp Kk | Charge-transport structures |
WO2000052457A1 (en) | 1999-03-02 | 2000-09-08 | Helix Biopharma Corporation | Card-based biosensor device |
US6180956B1 (en) | 1999-03-03 | 2001-01-30 | International Business Machine Corp. | Thin film transistors with organic-inorganic hybrid materials as semiconducting channels |
US6207472B1 (en) | 1999-03-09 | 2001-03-27 | International Business Machines Corporation | Low temperature thin film transistor fabrication |
US6878312B1 (en) | 1999-03-29 | 2005-04-12 | Seiko Epson Corporation | Composition, film manufacturing method, as well as functional device and manufacturing method therefore |
US6498114B1 (en) | 1999-04-09 | 2002-12-24 | E Ink Corporation | Method for forming a patterned semiconductor film |
US6072716A (en) | 1999-04-14 | 2000-06-06 | Massachusetts Institute Of Technology | Memory structures and methods of making same |
FR2793089B3 (fr) | 1999-04-28 | 2001-06-08 | Rene Liger | Transpondeur a antenne integree |
DE19919448A1 (de) | 1999-04-29 | 2000-11-02 | Miele & Cie | Kühlgerät und Verfahren zur Verkeimungsindikation |
DE19921024C2 (de) | 1999-05-06 | 2001-03-08 | Wolfgang Eichelmann | Videospielanlage |
US6383664B2 (en) | 1999-05-11 | 2002-05-07 | The Dow Chemical Company | Electroluminescent or photocell device having protective packaging |
EP1052594A1 (de) | 1999-05-14 | 2000-11-15 | Sokymat S.A. | Transponder und Spritzgussteil sowie Verfahren zu ihrer Herstellung |
TW556357B (en) | 1999-06-28 | 2003-10-01 | Semiconductor Energy Lab | Method of manufacturing an electro-optical device |
JP2001085272A (ja) | 1999-07-14 | 2001-03-30 | Matsushita Electric Ind Co Ltd | 可変容量コンデンサ |
DE19933757A1 (de) | 1999-07-19 | 2001-01-25 | Giesecke & Devrient Gmbh | Chipkarte mit integrierter Batterie |
DE19935527A1 (de) | 1999-07-28 | 2001-02-08 | Giesecke & Devrient Gmbh | Aktive Folie für Chipkarten mit Display |
DE19937262A1 (de) | 1999-08-06 | 2001-03-01 | Siemens Ag | Anordnung mit Transistor-Funktion |
US6593690B1 (en) | 1999-09-03 | 2003-07-15 | 3M Innovative Properties Company | Large area organic electronic devices having conducting polymer buffer layers and methods of making same |
US6517995B1 (en) | 1999-09-14 | 2003-02-11 | Massachusetts Institute Of Technology | Fabrication of finely featured devices by liquid embossing |
CN1376100A (zh) | 1999-09-28 | 2002-10-23 | 住友重机械工业株式会社 | 激光钻孔的加工方法及其加工装置 |
WO2001027998A1 (en) | 1999-10-11 | 2001-04-19 | Koninklijke Philips Electronics N.V. | Integrated circuit |
JP2003513475A (ja) * | 1999-11-02 | 2003-04-08 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 薄膜超小型電子装置間の垂直相互接続を形成する方法及びそのような垂直相互接続を備えた製品 |
US6335539B1 (en) | 1999-11-05 | 2002-01-01 | International Business Machines Corporation | Method for improving performance of organic semiconductors in bottom electrode structure |
US6284562B1 (en) | 1999-11-17 | 2001-09-04 | Agere Systems Guardian Corp. | Thin film transistors |
EP1103916A1 (de) | 1999-11-24 | 2001-05-30 | Infineon Technologies AG | Chipkarte |
US6136702A (en) | 1999-11-29 | 2000-10-24 | Lucent Technologies Inc. | Thin film transistors |
US6621098B1 (en) | 1999-11-29 | 2003-09-16 | The Penn State Research Foundation | Thin-film transistor and methods of manufacturing and incorporating a semiconducting organic material |
US6197663B1 (en) | 1999-12-07 | 2001-03-06 | Lucent Technologies Inc. | Process for fabricating integrated circuit devices having thin film transistors |
BR0016670A (pt) * | 1999-12-21 | 2003-06-24 | Plastic Logic Ltd | Métodos para formar um circuito integrado e para definir um circuito eletrônico, e, dispositivo eletrônico |
US6706159B2 (en) | 2000-03-02 | 2004-03-16 | Diabetes Diagnostics | Combined lancet and electrochemical analyte-testing apparatus |
JP3732378B2 (ja) * | 2000-03-03 | 2006-01-05 | 新光電気工業株式会社 | 半導体装置の製造方法 |
DE10012204A1 (de) | 2000-03-13 | 2001-09-20 | Siemens Ag | Einrichtung zum Kennzeichnen von Stückgut |
EP1134694A1 (de) | 2000-03-16 | 2001-09-19 | Infineon Technologies AG | Dokument mit integrierter elektronischer Schaltung |
DK1311702T3 (da) | 2000-03-28 | 2006-03-27 | Diabetes Diagnostics Inc | Kontinuerlig fremgangsmåde til fremstilling af et engangs elektrokemisk föleelement |
US6709806B2 (en) * | 2000-03-31 | 2004-03-23 | Kabushiki Kaisha Toshiba | Method of forming composite member |
US6329226B1 (en) | 2000-06-01 | 2001-12-11 | Agere Systems Guardian Corp. | Method for fabricating a thin-film transistor |
DE10033112C2 (de) | 2000-07-07 | 2002-11-14 | Siemens Ag | Verfahren zur Herstellung und Strukturierung organischer Feldeffekt-Transistoren (OFET), hiernach gefertigter OFET und seine Verwendung |
JP3951091B2 (ja) * | 2000-08-04 | 2007-08-01 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
DE10120687A1 (de) | 2001-04-27 | 2002-10-31 | Siemens Ag | Verkapseltes organisch-elektronisches Bauteil, Verfahren zu seiner Herstellung und seine Verwendung |
JP2004506985A (ja) | 2000-08-18 | 2004-03-04 | シーメンス アクチエンゲゼルシヤフト | 封入された有機電子構成素子、その製造方法および使用 |
US6403460B1 (en) * | 2000-08-22 | 2002-06-11 | Charles W. C. Lin | Method of making a semiconductor chip assembly |
JP2002068324A (ja) | 2000-08-30 | 2002-03-08 | Nippon Sanso Corp | 断熱容器 |
DE10043204A1 (de) | 2000-09-01 | 2002-04-04 | Siemens Ag | Organischer Feld-Effekt-Transistor, Verfahren zur Strukturierung eines OFETs und integrierte Schaltung |
DE10045192A1 (de) | 2000-09-13 | 2002-04-04 | Siemens Ag | Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers |
DE10047171A1 (de) | 2000-09-22 | 2002-04-18 | Siemens Ag | Elektrode und/oder Leiterbahn für organische Bauelemente und Herstellungverfahren dazu |
GB2367788A (en) * | 2000-10-16 | 2002-04-17 | Seiko Epson Corp | Etching using an ink jet print head |
KR20020036916A (ko) | 2000-11-11 | 2002-05-17 | 주승기 | 실리콘 박막의 결정화 방법 및 이에 의해 제조된 반도체소자 |
DE10058559A1 (de) | 2000-11-24 | 2002-05-29 | Interactiva Biotechnologie Gmb | System zur Abwicklung eines Warentransfers und Warenvorrats-Behälter |
KR100390522B1 (ko) | 2000-12-01 | 2003-07-07 | 피티플러스(주) | 결정질 실리콘 활성층을 포함하는 박막트랜지스터 제조 방법 |
DE10061297C2 (de) | 2000-12-08 | 2003-05-28 | Siemens Ag | Verfahren zur Sturkturierung eines OFETs |
US6884313B2 (en) * | 2001-01-08 | 2005-04-26 | Fujitsu Limited | Method and system for joining and an ultra-high density interconnect |
DE10105914C1 (de) | 2001-02-09 | 2002-10-10 | Siemens Ag | Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung |
US6767807B2 (en) | 2001-03-02 | 2004-07-27 | Fuji Photo Film Co., Ltd. | Method for producing organic thin film device and transfer material used therein |
DE10117663B4 (de) | 2001-04-09 | 2004-09-02 | Samsung SDI Co., Ltd., Suwon | Verfahren zur Herstellung von Matrixanordnungen auf Basis verschiedenartiger organischer leitfähiger Materialien |
US20020170897A1 (en) | 2001-05-21 | 2002-11-21 | Hall Frank L. | Methods for preparing ball grid array substrates via use of a laser |
US6870180B2 (en) | 2001-06-08 | 2005-03-22 | Lucent Technologies Inc. | Organic polarizable gate transistor apparatus and method |
JP2003089259A (ja) | 2001-09-18 | 2003-03-25 | Hitachi Ltd | パターン形成方法およびパターン形成装置 |
US7351660B2 (en) | 2001-09-28 | 2008-04-01 | Hrl Laboratories, Llc | Process for producing high performance interconnects |
US6617609B2 (en) * | 2001-11-05 | 2003-09-09 | 3M Innovative Properties Company | Organic thin film transistor with siloxane polymer interface |
JP4045143B2 (ja) * | 2002-02-18 | 2008-02-13 | テセラ・インターコネクト・マテリアルズ,インコーポレイテッド | 配線膜間接続用部材の製造方法及び多層配線基板の製造方法 |
US6946332B2 (en) | 2002-03-15 | 2005-09-20 | Lucent Technologies Inc. | Forming nanoscale patterned thin film metal layers |
US7060633B2 (en) * | 2002-03-29 | 2006-06-13 | Texas Instruments Incorporated | Planarization for integrated circuits |
DE10219905B4 (de) | 2002-05-03 | 2011-06-22 | OSRAM Opto Semiconductors GmbH, 93055 | Optoelektronisches Bauelement mit organischen funktionellen Schichten und zwei Trägern sowie Verfahren zur Herstellung eines solchen optoelektronischen Bauelements |
JP3542350B2 (ja) * | 2002-05-31 | 2004-07-14 | 沖電気工業株式会社 | 半導体装置及びその製造方法 |
US6812509B2 (en) | 2002-06-28 | 2004-11-02 | Palo Alto Research Center Inc. | Organic ferroelectric memory cells |
US6870183B2 (en) | 2002-11-04 | 2005-03-22 | Advanced Micro Devices, Inc. | Stacked organic memory devices and methods of operating and fabricating |
WO2004042837A2 (de) | 2002-11-05 | 2004-05-21 | Siemens Aktiengesellschaft | Organisches elektronisches bauteil mit hochaufgelöster strukturierung und herstellungsverfahren dazu |
DE50306538D1 (de) | 2002-11-19 | 2007-03-29 | Polyic Gmbh & Co Kg | Organische elektronische schaltung mit stukturierter halbleitender funktionsschicht und herstellungsverfahren dazu |
-
2003
- 2003-07-09 US US10/523,216 patent/US8044517B2/en not_active Expired - Fee Related
- 2003-07-09 WO PCT/DE2003/002303 patent/WO2004017439A2/de not_active Application Discontinuation
- 2003-07-09 EP EP03787642A patent/EP1525630A2/de not_active Withdrawn
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20020025391A1 (en) * | 1989-05-26 | 2002-02-28 | Marie Angelopoulos | Patterns of electrically conducting polymers and their application as electrodes or electrical contacts |
US5480839A (en) * | 1993-01-15 | 1996-01-02 | Kabushiki Kaisha Toshiba | Semiconductor device manufacturing method |
US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
WO2001047044A2 (en) * | 1999-12-21 | 2001-06-28 | Plastic Logic Limited | Forming interconnects |
WO2002095805A2 (en) * | 2001-05-23 | 2002-11-28 | Plastic Logic Limited | Laser parrering of devices |
Non-Patent Citations (1)
Title |
---|
DE LEEUW D M ET AL: "Polymeric integrated circuits and light-emitting diodes" ELECTRON DEVICES MEETING, 1997. TECHNICAL DIGEST., INTERNATIONAL WASHINGTON, DC, USA 7-10 DEC. 1997, NEW YORK, NY, USA,IEEE, US, 7. Dezember 1997 (1997-12-07), Seiten 331-336, XP010265518 ISBN: 0-7803-4100-7 * |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6940408B2 (en) | 2002-12-31 | 2005-09-06 | Avery Dennison Corporation | RFID device and method of forming |
US8072333B2 (en) | 2002-12-31 | 2011-12-06 | Avery Dennison Corporation | RFID device and method of forming |
Also Published As
Publication number | Publication date |
---|---|
US20060024947A1 (en) | 2006-02-02 |
WO2004017439A3 (de) | 2004-06-10 |
US8044517B2 (en) | 2011-10-25 |
EP1525630A2 (de) | 2005-04-27 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP1316116B1 (de) | Verfahren zur strukturierung eines organischen feldeffekttransistors | |
DE10105914C1 (de) | Organischer Feldeffekt-Transistor mit fotostrukturiertem Gate-Dielektrikum und ein Verfahren zu dessen Erzeugung | |
DE10140666C2 (de) | Verfahren zur Herstellung eines leitfähigen strukturierten Polymerfilms und Verwendung des Verfahrens | |
DE2615862A1 (de) | Struktur aus einem substrat und mindestens einem isolierten metallisierungsmuster und verfahren zu ihrer herstellung | |
DE10126860C2 (de) | Organischer Feldeffekt-Transistor, Verfahren zu seiner Herstellung und Verwendung zum Aufbau integrierter Schaltungen | |
DE10328811B4 (de) | Verbindung zur Bildung einer selbstorganisierenden Monolage, Schichtstruktur, Halbleiterbauelement mit einer Schichtstruktur und Verfahren zur Herstellung einer Schichtstruktur | |
DE10240105B4 (de) | Herstellung organischer elektronischer Schaltkreise durch Kontaktdrucktechniken | |
EP1563553B1 (de) | Organische elektronische schaltung mit stukturierter halbleitender funktionsschicht und herstellungsverfahren dazu | |
WO2004004025A2 (de) | Verfahren zur kostengünstigen strukturierung von leitfähigen polymeren mittels definition von hydrophilen und hydrophoben bereichen | |
WO2004042837A2 (de) | Organisches elektronisches bauteil mit hochaufgelöster strukturierung und herstellungsverfahren dazu | |
DE10153562A1 (de) | Verfahren zur Verringerung des elektrischen Kontaktwiderstandes in organischen Feldeffekt-Transistoren durch Einbetten von Nanopartikeln zur Erzeugung von Feldüberhöhungen an der Grenzfläche zwischen dem Kontaktmaterial und dem organischen Halbleitermaterial | |
DE102004005247A1 (de) | Imprint-Lithographieverfahren | |
EP1925033A1 (de) | Elektronische schaltung und verfahren zur herstellung einer solchen | |
EP1525630A2 (de) | Elektronisches bauteil mit vorwiegend organischen funktionsmaterialien und herstellungsverfahren dazu | |
EP1704606B1 (de) | Verfahren zur Herstellung eines organischen Transistors mit selbstjustierender Gate-Elektrode | |
DE10041506A1 (de) | Verfahren zur Erzeugung eines Leiterbildes auf einer Schaltplatte | |
EP1658648B1 (de) | Herstellungsverfahren für ein organisches elektronisches bauteil mit hochaufgelöster strukturierung | |
DE10330063A1 (de) | Verfahren zur Strukturierung und Integration organischer Schichten unter Schutz | |
DE102015100692B4 (de) | Verfahren zur Erstellung einer zweidimensionalen elektronischen Struktur und zweidimensionale elektronische Struktur | |
WO2005006462A1 (de) | Verfahren und vorrichtung zur strukturierung von organischen schichten | |
EP1817946B1 (de) | Verfahren und vorrichtung zur erzeugung von strukturen aus funktionsmaterialien | |
DE102019201792A1 (de) | Halbleiter-Schaltungsanordnung und Verfahren zu deren Herstellung | |
WO2005006448A1 (de) | Feldeffekttransistor und verfahren zum herstellen eines feldeffekttransistors | |
DE102009047315A1 (de) | Organischer Feldeffekttransistor und Verfahren zur Herstellung desselben | |
DE10356675A1 (de) | Elektrodenanordnung |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): CN JP US |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2003787642 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 2003787642 Country of ref document: EP |
|
ENP | Entry into the national phase |
Ref document number: 2006024947 Country of ref document: US Kind code of ref document: A1 |
|
WWE | Wipo information: entry into national phase |
Ref document number: 10523216 Country of ref document: US |
|
WWP | Wipo information: published in national office |
Ref document number: 10523216 Country of ref document: US |
|
NENP | Non-entry into the national phase |
Ref country code: JP |
|
WWW | Wipo information: withdrawn in national office |
Country of ref document: JP |