WO2004020683A3 - Silver selenide film stoichiometry and morphology control in sputter deposition - Google Patents
Silver selenide film stoichiometry and morphology control in sputter deposition Download PDFInfo
- Publication number
- WO2004020683A3 WO2004020683A3 PCT/US2003/026814 US0326814W WO2004020683A3 WO 2004020683 A3 WO2004020683 A3 WO 2004020683A3 US 0326814 W US0326814 W US 0326814W WO 2004020683 A3 WO2004020683 A3 WO 2004020683A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- mtorr
- sputter
- silver
- selenide
- sputter deposition
- Prior art date
Links
- KDSXXMBJKHQCAA-UHFFFAOYSA-N disilver;selenium(2-) Chemical compound [Se-2].[Ag+].[Ag+] KDSXXMBJKHQCAA-UHFFFAOYSA-N 0.000 title abstract 6
- 238000004544 sputter deposition Methods 0.000 title abstract 3
- 238000000034 method Methods 0.000 abstract 5
- 238000000151 deposition Methods 0.000 abstract 2
- 230000015572 biosynthetic process Effects 0.000 abstract 1
- 230000007547 defect Effects 0.000 abstract 1
- 238000005755 formation reaction Methods 0.000 abstract 1
- 238000001552 radio frequency sputter deposition Methods 0.000 abstract 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02617—Deposition types
- H01L21/02631—Physical deposition at reduced pressure, e.g. MBE, sputtering, evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/0021—Reactive sputtering or evaporation
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/06—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the coating material
- C23C14/0623—Sulfides, selenides or tellurides
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3407—Cathode assembly for sputtering apparatus, e.g. Target
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/34—Sputtering
- C23C14/3492—Variation of parameters during sputtering
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/54—Controlling or regulating the coating process
- C23C14/548—Controlling the composition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02266—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by physical ablation of a target, e.g. sputtering, reactive sputtering, physical vapour deposition or pulsed laser deposition
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10S428/00—Stock material or miscellaneous articles
- Y10S428/922—Static electricity metal bleed-off metallic stock
- Y10S428/9335—Product by special process
- Y10S428/938—Vapor deposition or gas diffusion
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
- Y10T—TECHNICAL SUBJECTS COVERED BY FORMER US CLASSIFICATION
- Y10T428/00—Stock material or miscellaneous articles
- Y10T428/12—All metal or with adjacent metals
- Y10T428/12493—Composite; i.e., plural, adjacent, spatially distinct metal components [e.g., layers, joint, etc.]
- Y10T428/12771—Transition metal-base component
- Y10T428/12861—Group VIII or IB metal-base component
- Y10T428/12896—Ag-base component
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
AU2003270012A AU2003270012A1 (en) | 2002-08-29 | 2003-08-28 | Silver selenide film stoichiometry and morphology control in sputter deposition |
CN038206064A CN1871662B (en) | 2002-08-29 | 2003-08-28 | Silver selenide film stoichiometry and morphology control in sputter deposition |
EP03751907A EP1573081A3 (en) | 2002-08-29 | 2003-08-28 | Silver selenide film stoichiometry and morphology control in sputter deposition |
JP2004531549A JP4164068B2 (en) | 2002-08-29 | 2003-08-28 | Controlling the stoichiometry and morphology of silver selenide films in sputter deposition. |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US10/230,279 | 2002-08-29 | ||
US10/230,279 US7364644B2 (en) | 2002-08-29 | 2002-08-29 | Silver selenide film stoichiometry and morphology control in sputter deposition |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004020683A2 WO2004020683A2 (en) | 2004-03-11 |
WO2004020683A3 true WO2004020683A3 (en) | 2005-10-20 |
Family
ID=31976442
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/US2003/026814 WO2004020683A2 (en) | 2002-08-29 | 2003-08-28 | Silver selenide film stoichiometry and morphology control in sputter deposition |
Country Status (7)
Country | Link |
---|---|
US (4) | US7364644B2 (en) |
EP (1) | EP1573081A3 (en) |
JP (1) | JP4164068B2 (en) |
KR (5) | KR100732498B1 (en) |
CN (1) | CN1871662B (en) |
AU (1) | AU2003270012A1 (en) |
WO (1) | WO2004020683A2 (en) |
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EP1710324B1 (en) * | 2005-04-08 | 2008-12-03 | STMicroelectronics S.r.l. | PVD process and chamber for the pulsed deposition of a chalcogenide material layer of a phase change memory device |
US7574224B2 (en) * | 2005-06-13 | 2009-08-11 | Qualcomm Incorporated | Methods and apparatus for performing timing synchronization with base stations |
US8036205B2 (en) * | 2005-06-13 | 2011-10-11 | Qualcomm Incorporated | Methods and apparatus for supporting uplinks with remote base stations |
US7974261B2 (en) * | 2005-06-13 | 2011-07-05 | Qualcomm Incorporated | Basestation methods and apparatus for supporting timing synchronization |
US7812333B2 (en) * | 2007-06-28 | 2010-10-12 | Qimonda North America Corp. | Integrated circuit including resistivity changing material having a planarized surface |
TWI397601B (en) * | 2008-03-14 | 2013-06-01 | Lam Res Corp | Method for depositing a film onto a substrate |
US8134138B2 (en) | 2009-01-30 | 2012-03-13 | Seagate Technology Llc | Programmable metallization memory cell with planarized silver electrode |
FR2965569B1 (en) * | 2010-10-04 | 2019-06-14 | X-Fab France | USE OF A PROCESS FOR DEPOSITION BY CATHODIC SPRAYING OF A CHALCOGENURE LAYER |
CN102080263B (en) * | 2010-12-10 | 2012-11-07 | 同济大学 | Method for preparing Ag2X film |
WO2013070679A1 (en) | 2011-11-08 | 2013-05-16 | Tosoh Smd, Inc. | Silicon sputtering target with special surface treatment and good particle performance and methods of making the same |
CN104828790B (en) * | 2015-03-24 | 2017-05-17 | 武汉理工大学 | A static loading synthetic method for Ag2X compounds |
KR102618880B1 (en) | 2018-09-13 | 2023-12-29 | 삼성전자주식회사 | Switching element, variable resistance memory device and manufacturing method of the same |
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Also Published As
Publication number | Publication date |
---|---|
KR20050059097A (en) | 2005-06-17 |
AU2003270012A8 (en) | 2004-03-19 |
US20050098428A1 (en) | 2005-05-12 |
EP1573081A3 (en) | 2005-12-07 |
KR100669611B1 (en) | 2007-01-16 |
US20040040835A1 (en) | 2004-03-04 |
US9552986B2 (en) | 2017-01-24 |
JP4164068B2 (en) | 2008-10-08 |
AU2003270012A1 (en) | 2004-03-19 |
US7049009B2 (en) | 2006-05-23 |
KR20060106937A (en) | 2006-10-12 |
US20140224646A1 (en) | 2014-08-14 |
CN1871662B (en) | 2010-05-05 |
KR100732498B1 (en) | 2007-06-27 |
KR20060106936A (en) | 2006-10-12 |
KR100669612B1 (en) | 2007-01-16 |
KR100741941B1 (en) | 2007-07-24 |
KR20070036803A (en) | 2007-04-03 |
WO2004020683A2 (en) | 2004-03-11 |
EP1573081A2 (en) | 2005-09-14 |
KR100782244B1 (en) | 2007-12-05 |
US7364644B2 (en) | 2008-04-29 |
CN1871662A (en) | 2006-11-29 |
JP2006503977A (en) | 2006-02-02 |
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US20080210921A1 (en) | 2008-09-04 |
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