WO2004025696A3 - Active matrix backplane for controlling controlled elements and method of manufacture thereof - Google Patents

Active matrix backplane for controlling controlled elements and method of manufacture thereof Download PDF

Info

Publication number
WO2004025696A3
WO2004025696A3 PCT/US2003/015682 US0315682W WO2004025696A3 WO 2004025696 A3 WO2004025696 A3 WO 2004025696A3 US 0315682 W US0315682 W US 0315682W WO 2004025696 A3 WO2004025696 A3 WO 2004025696A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
manufacture
active matrix
deposition
controlled elements
Prior art date
Application number
PCT/US2003/015682
Other languages
French (fr)
Other versions
WO2004025696A2 (en
Inventor
Thomas P Brody
Paul R Malmberg
Robert E Di Stapleton
Original Assignee
Advantech Global Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advantech Global Ltd filed Critical Advantech Global Ltd
Priority to JP2004535396A priority Critical patent/JP4246153B2/en
Priority to AU2003288893A priority patent/AU2003288893A1/en
Priority to EP03781279A priority patent/EP1568069A4/en
Publication of WO2004025696A2 publication Critical patent/WO2004025696A2/en
Publication of WO2004025696A3 publication Critical patent/WO2004025696A3/en
Priority to HK05109121A priority patent/HK1077400A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259—Multistep manufacturing methods
    • H01L27/1288—Multistep manufacturing methods employing particular masking sequences or specially adapted masks, e.g. half-tone mask
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04—Coating on selected surface areas, e.g. using masks
    • C23C14/042—Coating on selected surface areas, e.g. using masks using masks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
    • H01L29/78681—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising AIIIBV or AIIBVI or AIVBVI semiconductor materials, or Se or Te
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10—OLED displays
    • H10K59/12—Active-matrix OLED [AMOLED] displays
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10—TECHNICAL SUBJECTS COVERED BY FORMER USPC
    • Y10S—TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y10S438/00—Semiconductor device manufacturing: process
    • Y10S438/907—Continuous processing

Abstract

An electronic device is formed from electronic elements (70, 74) deposited on a substrate (10). The electronic elements are deposited on the substrate by advancing the substrate through a plurality of deposition vacuum vessels (4-1 to 4-12), with each deposition vacuum vessel having at least one material deposition source (8-1 to 8-12) and a shadowmask (12-1 to 12-12) positioned therein. The material from at least one material deposition source (8) positioned in each deposition vacuum vessel (4) is deposited on the substrate (10) through the shadowmask (12) positioned in the deposition vacuum vessel (4) to form on the substrate (10) a circuit comprised of an array of electronic elements. The circuit is formed solely by the successive deposition of materials on the substrate (10).
PCT/US2003/015682 2002-06-05 2003-05-19 Active matrix backplane for controlling controlled elements and method of manufacture thereof WO2004025696A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004535396A JP4246153B2 (en) 2002-06-05 2003-05-19 Method for forming an electronic device
AU2003288893A AU2003288893A1 (en) 2002-06-05 2003-05-19 Active matrix backplane for controlling controlled elements and method of manufacture thereof
EP03781279A EP1568069A4 (en) 2002-06-05 2003-05-19 Active matrix backplane for controlling controlled elements and method of manufacture thereof
HK05109121A HK1077400A1 (en) 2002-06-05 2005-10-17 Active matrix backplane for controlling controlledelements and method of manufacture thereof

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US38652502P 2002-06-05 2002-06-05
US60/386,525 2002-06-05
US10/255,972 US6943066B2 (en) 2002-06-05 2002-09-26 Active matrix backplane for controlling controlled elements and method of manufacture thereof
US10/255,972 2002-09-26

Publications (2)

Publication Number Publication Date
WO2004025696A2 WO2004025696A2 (en) 2004-03-25
WO2004025696A3 true WO2004025696A3 (en) 2005-01-06

Family

ID=29714899

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/015682 WO2004025696A2 (en) 2002-06-05 2003-05-19 Active matrix backplane for controlling controlled elements and method of manufacture thereof

Country Status (7)

Country Link
US (1) US6943066B2 (en)
EP (1) EP1568069A4 (en)
JP (1) JP4246153B2 (en)
CN (1) CN100375229C (en)
AU (1) AU2003288893A1 (en)
HK (1) HK1077400A1 (en)
WO (1) WO2004025696A2 (en)

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US6642092B1 (en) * 2002-07-11 2003-11-04 Sharp Laboratories Of America, Inc. Thin-film transistors formed on a metal foil substrate
EP1559299A1 (en) * 2002-10-07 2005-08-03 Koninklijke Philips Electronics N.V. Method for manufacturing a light emitting display
US7214554B2 (en) * 2004-03-18 2007-05-08 Eastman Kodak Company Monitoring the deposition properties of an OLED
JP4393402B2 (en) * 2004-04-22 2010-01-06 キヤノン株式会社 Organic electronic device manufacturing method and manufacturing apparatus
DE102004024461A1 (en) * 2004-05-14 2005-12-01 Konarka Technologies, Inc., Lowell Device and method for producing an electronic component with at least one active organic layer
KR100671640B1 (en) * 2004-06-24 2007-01-18 삼성에스디아이 주식회사 Thin film transistor array substrate and display using the same and fabrication method thereof
US20060021869A1 (en) * 2004-07-28 2006-02-02 Advantech Global, Ltd System for and method of ensuring accurate shadow mask-to-substrate registration in a deposition process
US7232694B2 (en) * 2004-09-28 2007-06-19 Advantech Global, Ltd. System and method for active array temperature sensing and cooling
KR100696479B1 (en) * 2004-11-18 2007-03-19 삼성에스디아이 주식회사 Organic light emitting device and method for fabricating the same
US7132361B2 (en) * 2004-12-23 2006-11-07 Advantech Global, Ltd System for and method of forming via holes by multiple deposition events in a continuous inline shadow mask deposition process
US7271111B2 (en) * 2005-06-08 2007-09-18 Advantech Global, Ltd Shadow mask deposition of materials using reconfigurable shadow masks
US7531470B2 (en) * 2005-09-27 2009-05-12 Advantech Global, Ltd Method and apparatus for electronic device manufacture using shadow masks
US20070137568A1 (en) * 2005-12-16 2007-06-21 Schreiber Brian E Reciprocating aperture mask system and method
US7763114B2 (en) * 2005-12-28 2010-07-27 3M Innovative Properties Company Rotatable aperture mask assembly and deposition system
EP2987450B1 (en) * 2006-02-07 2019-06-05 Boston Scientific Limited Medical device light source
US20090098309A1 (en) * 2007-10-15 2009-04-16 Advantech Global, Ltd In-Situ Etching Of Shadow Masks Of A Continuous In-Line Shadow Mask Vapor Deposition System
US20090311427A1 (en) * 2008-06-13 2009-12-17 Advantech Global, Ltd Mask Dimensional Adjustment and Positioning System and Method
WO2011019429A2 (en) * 2009-06-09 2011-02-17 Arizona Technology Enterprises Method of anodizing aluminum using a hard mask and semiconductor device thereof
JP5528727B2 (en) * 2009-06-19 2014-06-25 富士フイルム株式会社 Thin film transistor manufacturing apparatus, oxide semiconductor thin film manufacturing method, thin film transistor manufacturing method, oxide semiconductor thin film, thin film transistor, and light emitting device
US8658478B2 (en) 2010-09-23 2014-02-25 Advantech Global, Ltd Transistor structure for improved static control during formation of the transistor
CN102021536A (en) * 2010-12-16 2011-04-20 潘重光 Vapor deposition shadow mask system and method thereof for arbitrarily-sized base board and display screen
CN102122612A (en) * 2010-12-16 2011-07-13 潘重光 Method and system for manufacturing component by using shadow mask technological line
US10233528B2 (en) * 2015-06-08 2019-03-19 Applied Materials, Inc. Mask for deposition system and method for using the mask
KR20180032717A (en) * 2016-09-22 2018-04-02 삼성디스플레이 주식회사 mask for deposition, apparatus for manufacturing display apparatus and method of manufacturing display apparatus

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Also Published As

Publication number Publication date
CN1666318A (en) 2005-09-07
WO2004025696A2 (en) 2004-03-25
EP1568069A2 (en) 2005-08-31
US6943066B2 (en) 2005-09-13
EP1568069A4 (en) 2006-10-25
AU2003288893A8 (en) 2004-04-30
JP2005539378A (en) 2005-12-22
HK1077400A1 (en) 2006-02-10
AU2003288893A1 (en) 2004-04-30
US20030228715A1 (en) 2003-12-11
JP4246153B2 (en) 2009-04-02
CN100375229C (en) 2008-03-12

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