WO2004027112A3 - An apparatus for the deposition of high dielectric constant films - Google Patents

An apparatus for the deposition of high dielectric constant films Download PDF

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Publication number
WO2004027112A3
WO2004027112A3 PCT/US2003/029933 US0329933W WO2004027112A3 WO 2004027112 A3 WO2004027112 A3 WO 2004027112A3 US 0329933 W US0329933 W US 0329933W WO 2004027112 A3 WO2004027112 A3 WO 2004027112A3
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WO
WIPO (PCT)
Prior art keywords
deposition
dielectric constant
high dielectric
vapor pressure
precursors
Prior art date
Application number
PCT/US2003/029933
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French (fr)
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WO2004027112A2 (en
Inventor
Bobby M Ronsse
Craig R Metzner
Richard Omar Collins
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Applied Materials Inc
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Publication date
Application filed by Applied Materials Inc filed Critical Applied Materials Inc
Priority to AU2003275163A priority Critical patent/AU2003275163A1/en
Priority to EP03759431A priority patent/EP1540035A2/en
Publication of WO2004027112A2 publication Critical patent/WO2004027112A2/en
Publication of WO2004027112A3 publication Critical patent/WO2004027112A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
    • H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
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    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C23C16/40—Oxides
    • C23C16/407—Oxides of zinc, germanium, cadmium, indium, tin, thallium or bismuth
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    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
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    • C23C16/4405—Cleaning of reactor or parts inside the reactor by using reactive gases
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    • C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
    • C23C16/4409—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber characterised by sealing means
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    • C23C16/4411—Cooling of the reaction chamber walls
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    • C23C16/4412—Details relating to the exhausts, e.g. pumps, filters, scrubbers, particle traps
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    • C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
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    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
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    • H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
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Abstract

An integrated deposition system is described that is capable of vaporizing low vapor pressure liquid precursors and conveying the vapor to a processing region to fabricate advanced integrated circuits. The integrated deposition system (100) includes a heated exhaust system (300), a remote plasma generator (400), a processing chamber (200), a liquid delivery system (510), and a computer control module that together create a commercially viable and production worthy system for depositing high capacity dielectric materials from low vapor pressure precursors.
PCT/US2003/029933 2002-09-20 2003-09-19 An apparatus for the deposition of high dielectric constant films WO2004027112A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
AU2003275163A AU2003275163A1 (en) 2002-09-20 2003-09-19 An apparatus for the deposition of high dielectric constant films
EP03759431A EP1540035A2 (en) 2002-09-20 2003-09-19 An apparatus for the deposition of high dielectric constant films

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/251,715 US20030101938A1 (en) 1998-10-27 2002-09-20 Apparatus for the deposition of high dielectric constant films
US10/251,715 2002-09-20

Publications (2)

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WO2004027112A2 WO2004027112A2 (en) 2004-04-01
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US20030101938A1 (en) 2003-06-05

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