WO2004027837B1 - Temperature-controlled substrate holder - Google Patents

Temperature-controlled substrate holder

Info

Publication number
WO2004027837B1
WO2004027837B1 PCT/US2003/026697 US0326697W WO2004027837B1 WO 2004027837 B1 WO2004027837 B1 WO 2004027837B1 US 0326697 W US0326697 W US 0326697W WO 2004027837 B1 WO2004027837 B1 WO 2004027837B1
Authority
WO
WIPO (PCT)
Prior art keywords
recess
heating
substrate holder
cooling medium
temperature
Prior art date
Application number
PCT/US2003/026697
Other languages
French (fr)
Other versions
WO2004027837A1 (en
Inventor
Igor C Ivanov
Jonathan Weiguo Zhang
Artur Kolics
Original Assignee
Blue29 Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Blue29 Corp filed Critical Blue29 Corp
Priority to AU2003262881A priority Critical patent/AU2003262881A1/en
Publication of WO2004027837A1 publication Critical patent/WO2004027837A1/en
Publication of WO2004027837B1 publication Critical patent/WO2004027837B1/en

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1619—Apparatus for electroless plating
    • C23C18/1628—Specific elements or parts of the apparatus
    • C23C18/163—Supporting devices for articles to be coated
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/27—Work carriers
    • B24B37/30—Work carriers for single side lapping of plane surfaces
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B49/00—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation
    • B24B49/14—Measuring or gauging equipment for controlling the feed movement of the grinding tool or work; Arrangements of indicating or measuring equipment, e.g. for indicating the start of the grinding operation taking regard of the temperature during grinding
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/1678—Heating of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
    • H01L21/2885—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition using an external electrical current, i.e. electro-deposition
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support

Abstract

A substrate holder has a disk-like body with a central recess having diameter smaller than the diameter of the substrate placed onto the upper surface of the holder. The substrate can be clamped in place by the clamps of the edge-grip mechanism or placed into a seat without the use of clamps. In both cases, the substrate forms a partial wall that confines the heating/cooling recess or chamber. The aforementioned recess is filled with a cooling or heating liquid (depending on the mode of metal deposition) selectively supplied from a liquid heating or cooling system. In order to ensure in the working chamber above the substrate a pressure slightly higher than the pressure in the cooling/heating recess, the working chamber is first filled with the working solution under the atmospheric pressure, and then the recess is filled with a heating or cooling liquid with simultaneous increase of pressure in the working chamber to a level slightly exceeding the pressure in the recess. The substrate holder of the invention provides direct heat/cool-exchange between the heating/cooling medium and the substrate and allows instantaneous change of temperature of the heating/cooling liquid.

Claims

AMENDED CLAIMS[received by the International Bureau on 23 April 2004 (23.04.2004); original claims 1-44 replaced by amended claims 1-23 (4 pages)]
1. A temperature-controlled substrate holder for holding a substrate in an apparatus for processing in a fluid, said apparatus having a sealable working chamber for said fluid, means for the supply of at least one fluid to said sealable working chamber, and means for controlling pressure in said sealable working chamber, said temperature- controlled substrate holder comprising: a substrate holder body located in said sealable working chamber, said holder having an upwardly facing flat surface, said substrate having a diameter, said upwardly facing flat surface having a recess with a diameter smaller than said diameter of said substrate, said upwardly facing flat surface being intended for supporting said substrate during said processing in a position, in which said substrate closes said recess; and means for the supply of a heating/cooling medium to said recess comprising storage means for said heating cooling medium, a heater, a cooler, and means for selectively switching the path of said heating/cooling medium from said storage means to said recess through said heater or said cooler.
2. The temperature-controlled substrate holder of claim 1, further comprising means for controlling a pressure ratio between the pressure of said at least one fluid in said sealable working chamber and the pressure of said heating/cooling medium in said recess.
3. The temperature-controlled substrate holder of claim 2, further comprising controller means for controlling said switching, wherein said means for selectively switching the path of said heating/cooling medium comprises a switchable two-way valve, and wherein said controller being connected to said switchable two-way valve, said heater, said cooler, and to said means for controlling the pressure ratio.
4. The temperature-controlled substrate holder of claims 2 or 3, wherein said means for controlling pressure ratio comprises a pressure differential control unit which maintains the pressure of said at least one fluid in said sealable working chamber at a level higher than said pressure of said heating/cooling medium in said recess.
5. The temperature-controlled substrate holder of claims 1 , 2, or 3, further comprising means for Fixation of said substrate in said temperature-controlled substrate holder.
6. The temperature-controlled substrate holder of claims 1, 2, or 3, wherein said recess has an upwardly facing tapered edge of a diameter exceeding said diameter of said substrate for use as a seat for said substrate in said temperature-controlled substrate holder.
7. The temperature-controlled substrate holder of claims 1, 2, or 3, further provided with means for uniform delivery of a predetermined volume of said heating/cooling medium to said recess from said storage means through said heater or cooler and for simultaneous uniform removal of said volume of said heating/cooling medium from said recess to said storage means.
8. The temperature-controlled substrate holder of claim 7, wherein said means for uniform delivery and for simultaneous uniform removal comprises a plurality of substantially horizontal medium delivery channels formed in said substrate holder body, a central supply opening having one end connected to said plurality of substantially horizontal medium delivery channels and another end to said switchable two-way valve, and a plurality of substantially vertical channels formed in said substrate holder body and connecting respective channels of said plurality of substantially horizontal medium delivery channels to said recess.
9. The temperature-controlled substrate holder of claim 3, further comprising means for rotation of said temperature-controlled substrate holder inside said sealable working chamber of said apparatus, said means for rotation comprising a rotating part rigidly connected to said substrate holder body, and a stationary part within which said rotating part rotates.
10. The temperature-controlled substrate holder of claim 9, further provided with means for uniform delivery of a predetermined volume of said heating/cooling medium to said recess from said storage means through said heater or cooler and for simultaneous uniform removal of said volume of said heating/cooling medium from said recess to said storage means.
11. The temperature-controlled substrate holder of claim 10, further comprising sealing means located between said stationary part and said rotating part, said rotating part having a first annular recess communicating with said switchable two-way valve, said rotating part having a second annular recess aligned with said first annular recess and forming therewith a common annular chambers sealed due to the use of said sealing means, said means for uniform delivery and for simultaneous uniform removal comprising a plurality of substantially horizontal medium delivery channels formed in said substrate holder body, a central supply opening formed in said rotating part having one end connected to said plurality of substantially horizontal medium delivery channels and another end to said switchable two-way valve via said common annular chambers, and a plurality of substantially vertical channels formed in said substrate holder body and connecting respective channels of said plurality of substantially horizontal medium delivery channels to said recess.
12. A method of direct heating/cooling of a substrate in a process of treatment of said substrate in a fluid with the use of a temperature-controlled substrate holder comprising: placing said substrate into said temperature controlled substrate holder so as to close and seal a recess within the temperature-controlled substrate holder; sealing a working chamber comprising the temperature-controlled substrate holder; supplying said working chamber with fluid for processing said substrate; supplying a heating/cooling medium to said recess to control the temperature of said substrate by selectively passing the heating/cooling medium through a heater or cooler prior to being supplied to the recess.
13. The method of claim 12, further comprising controlling pressure of said fluid in said working chamber and pressure of said heating/cooling medium in said recess so that said pressure in said working chamber is greater than said pressure in said recess.
14. The method of claim 12, wherein said supplying comprises delivering equal volumes of said heating/cooling medium from equal surface areas of said recess, and wherein the method further comprises removing equal volumes of said heating/cooling medium from equal surface areas of said recess.
15. The method of claim 14, wherein said removing the heating/cooling medium comprises removing the heating/cooling medium through perforations within sidewalls of the recess.
16. The method of claim 12, further comprising increasing the pressure within the working chamber while supplying the heating/cooling medium to the recess.
17. An apparatus, comprising: a substrate holder body comprising an upwardly facing flat surface for supporting a substrate, wherein the upwardly facing flat surface comprises a recess with a dimension smaller than a dimension of said substrate; means for supplying a heating/cooling medium to said recess; and means for rotating said substrate holder comprising a rotating part rigidly connected to said substrate holder body, and a stationary part within which said rotating part rotates.
18. The apparatus of claim 17, wherein the substrate holder body comprises: a lower part comprising a supply pipe and a removal pipe; an upper part comprising a plurality of medium supply perforations extending from a lower surface of the recess; and an intermediate part interposed between the lower and upper parts comprising at least one distribution channel aligned with the supply channel and the plurality of medium supply perforations.
19. The apparatus of claim 18, wherein the lower part further comprises at least one outlet channel aligned with the removal pipe, and wherein the upper and intermediate parts further comprise a plurality of medium removal perforations aligned with the outlet channel.
20. The apparatus of claim 17, wherein the substrate holder body comprises openings along the sidewall of the recess.
21. A method of processing a substrate, comprising: selectively passing a heating/cooling medium through a heater or a cooler; supplying the heating/cooling medium to a recess within a substrate holder; placing said substrate into said substrate holder so as to close and seal the recess subsequent to said supplying; sealing a working chamber comprising the temperature-controlled substrate holder; and supplying a processing fluid to said working chamber.
22. The method of claim 21 , wherein said supplying the heating/cooling medium comprises supplying the heating/cooling medium to a level exceeding an upper edge of the recess.
23. The method of claim 22, further comprising controlling pressure of said processing fluid in said working chamber and pressure of said heating/cooling medium in said recess so that said pressure in said working chamber is greater than said pressure in said recess.
PCT/US2003/026697 2002-09-20 2003-08-26 Temperature-controlled substrate holder WO2004027837A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003262881A AU2003262881A1 (en) 2002-09-20 2003-08-26 Temperature-controlled substrate holder

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/247,895 US6908512B2 (en) 2002-09-20 2002-09-20 Temperature-controlled substrate holder for processing in fluids
US10/247,895 2002-09-20

Publications (2)

Publication Number Publication Date
WO2004027837A1 WO2004027837A1 (en) 2004-04-01
WO2004027837B1 true WO2004027837B1 (en) 2004-08-26

Family

ID=32028980

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/026697 WO2004027837A1 (en) 2002-09-20 2003-08-26 Temperature-controlled substrate holder

Country Status (3)

Country Link
US (1) US6908512B2 (en)
AU (1) AU2003262881A1 (en)
WO (1) WO2004027837A1 (en)

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Also Published As

Publication number Publication date
US20040084143A1 (en) 2004-05-06
WO2004027837A1 (en) 2004-04-01
AU2003262881A1 (en) 2004-04-08
US6908512B2 (en) 2005-06-21

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