WO2004027890A3 - Organic thin film zener diodes - Google Patents

Organic thin film zener diodes Download PDF

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Publication number
WO2004027890A3
WO2004027890A3 PCT/US2003/028026 US0328026W WO2004027890A3 WO 2004027890 A3 WO2004027890 A3 WO 2004027890A3 US 0328026 W US0328026 W US 0328026W WO 2004027890 A3 WO2004027890 A3 WO 2004027890A3
Authority
WO
WIPO (PCT)
Prior art keywords
thin film
organic thin
zener diodes
film zener
electrodes
Prior art date
Application number
PCT/US2003/028026
Other languages
French (fr)
Other versions
WO2004027890A2 (en
Inventor
Richard P Kingsborough
Igor Sokolik
Original Assignee
Advanced Micro Devices Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Advanced Micro Devices Inc filed Critical Advanced Micro Devices Inc
Priority to JP2004537736A priority Critical patent/JP2005539395A/en
Priority to AU2003268527A priority patent/AU2003268527A1/en
Priority to KR1020057004612A priority patent/KR100908108B1/en
Priority to EP03749496A priority patent/EP1540749A2/en
Publication of WO2004027890A2 publication Critical patent/WO2004027890A2/en
Publication of WO2004027890A3 publication Critical patent/WO2004027890A3/en

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Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/20—Organic diodes
    • H10K10/26—Diodes comprising organic-organic junctions
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof  ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
    • H10K10/20—Organic diodes
    • H10K10/23—Schottky diodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/30—Coordination compounds
    • H10K85/311—Phthalocyanine
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
    • H10K85/60—Organic compounds having low molecular weight
    • H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
    • H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide

Abstract

A thin film Zener diode comprising: (a) a thin film comprising at least one layer including at least one organic material; and (b) first and second electrodes in contrast with respective opposite sides of the thin film, wherein the materials of the first and second electrodes and the thickness of the thin film are selected to provide a pre-selected Zener threshold voltage.
PCT/US2003/028026 2002-09-17 2003-09-08 Organic thin film zener diodes WO2004027890A2 (en)

Priority Applications (4)

Application Number Priority Date Filing Date Title
JP2004537736A JP2005539395A (en) 2002-09-17 2003-09-08 Organic thin film Zener diode
AU2003268527A AU2003268527A1 (en) 2002-09-17 2003-09-08 Organic thin film zener diodes
KR1020057004612A KR100908108B1 (en) 2002-09-17 2003-09-08 Organic Thin Film Zener Diodes
EP03749496A EP1540749A2 (en) 2002-09-17 2003-09-08 Organic thin film zener diodes

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/244,591 2002-09-17
US10/244,591 US7012276B2 (en) 2002-09-17 2002-09-17 Organic thin film Zener diodes

Publications (2)

Publication Number Publication Date
WO2004027890A2 WO2004027890A2 (en) 2004-04-01
WO2004027890A3 true WO2004027890A3 (en) 2004-09-10

Family

ID=31991924

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/028026 WO2004027890A2 (en) 2002-09-17 2003-09-08 Organic thin film zener diodes

Country Status (8)

Country Link
US (1) US7012276B2 (en)
EP (1) EP1540749A2 (en)
JP (1) JP2005539395A (en)
KR (1) KR100908108B1 (en)
CN (1) CN1703787A (en)
AU (1) AU2003268527A1 (en)
TW (1) TWI331807B (en)
WO (1) WO2004027890A2 (en)

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US20060245235A1 (en) * 2005-05-02 2006-11-02 Advanced Micro Devices, Inc. Design and operation of a resistance switching memory cell with diode
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KR101206605B1 (en) * 2006-02-02 2012-11-29 삼성전자주식회사 Organic memory devices and preparation method thereof
KR100825738B1 (en) * 2006-03-28 2008-04-29 한국전자통신연구원 Voltage control system using abruptly metal-insulator transition
US8293323B2 (en) * 2007-02-23 2012-10-23 The Penn State Research Foundation Thin metal film conductors and their manufacture
DE102009013685B4 (en) 2009-03-20 2013-01-31 Novaled Ag Use of an organic diode as organic Zener diode and method of operation
WO2011027683A1 (en) * 2009-09-03 2011-03-10 三菱電機株式会社 Flat-wound electricity storage device cell and flat-wound electricity storage device module
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US9202935B2 (en) 2013-10-01 2015-12-01 Vishay General Semiconductor Llc Zener diode haviing a polysilicon layer for improved reverse surge capability and decreased leakage current

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Also Published As

Publication number Publication date
JP2005539395A (en) 2005-12-22
CN1703787A (en) 2005-11-30
US20040051096A1 (en) 2004-03-18
AU2003268527A1 (en) 2004-04-08
EP1540749A2 (en) 2005-06-15
TW200409368A (en) 2004-06-01
US7012276B2 (en) 2006-03-14
KR100908108B1 (en) 2009-07-16
WO2004027890A2 (en) 2004-04-01
TWI331807B (en) 2010-10-11
KR20050044926A (en) 2005-05-13

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