WO2004034525A3 - Current-controlled polarization switching vertical cavity surface emitting laser - Google Patents

Current-controlled polarization switching vertical cavity surface emitting laser Download PDF

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Publication number
WO2004034525A3
WO2004034525A3 PCT/US2003/032545 US0332545W WO2004034525A3 WO 2004034525 A3 WO2004034525 A3 WO 2004034525A3 US 0332545 W US0332545 W US 0332545W WO 2004034525 A3 WO2004034525 A3 WO 2004034525A3
Authority
WO
WIPO (PCT)
Prior art keywords
current
polarization switching
emitting laser
surface emitting
cavity surface
Prior art date
Application number
PCT/US2003/032545
Other languages
French (fr)
Other versions
WO2004034525A2 (en
Inventor
Anis Husain
Ashok V Krishnamoorthy
Original Assignee
Ziva Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ziva Corp filed Critical Ziva Corp
Priority to AU2003282827A priority Critical patent/AU2003282827A1/en
Publication of WO2004034525A2 publication Critical patent/WO2004034525A2/en
Publication of WO2004034525A3 publication Critical patent/WO2004034525A3/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/04—Processes or apparatus for excitation, e.g. pumping, e.g. by electron beams
    • H01S5/042—Electrical excitation ; Circuits therefor
    • H01S5/0425—Electrodes, e.g. characterised by the structure
    • H01S5/04256—Electrodes, e.g. characterised by the structure characterised by the configuration
    • H01S5/04257—Electrodes, e.g. characterised by the structure characterised by the configuration having positive and negative electrodes on the same side of the substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18355—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a defined polarisation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/40—Arrangement of two or more semiconductor lasers, not provided for in groups H01S5/02 - H01S5/30
    • H01S5/42—Arrays of surface emitting lasers
    • H01S5/423—Arrays of surface emitting lasers having a vertical cavity
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06226—Modulation at ultra-high frequencies
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/06—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium
    • H01S5/062—Arrangements for controlling the laser output parameters, e.g. by operating on the active medium by varying the potential of the electrodes
    • H01S5/06233—Controlling other output parameters than intensity or frequency
    • H01S5/06236—Controlling other output parameters than intensity or frequency controlling the polarisation, e.g. TM/TE polarisation switching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18311—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement using selective oxidation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials

Abstract

A fast current-controlled polarization switching VCSEL with two independent intra­cavity p-contact electrodes (302A) and two independent intra-cavity n-contact electrodes (302B) positioned along the four sides of the symmetric aperture (312) such that there are two independent p- and n- contact pairs (302A, 302B) placed on opposite sides of the aperture (312) in a non-overlapping configuration. The anisotropy resulting from the unidirectional current flow causes the light output to be polarized perpendicular to the direction of current flow.
PCT/US2003/032545 2002-10-11 2003-10-14 Current-controlled polarization switching vertical cavity surface emitting laser WO2004034525A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003282827A AU2003282827A1 (en) 2002-10-11 2003-10-14 Current-controlled polarization switching vertical cavity surface emitting laser

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US41788402P 2002-10-11 2002-10-11
US60/417,884 2002-10-11
US51063803P 2003-10-10 2003-10-10
US60/510,638 2003-10-10

Publications (2)

Publication Number Publication Date
WO2004034525A2 WO2004034525A2 (en) 2004-04-22
WO2004034525A3 true WO2004034525A3 (en) 2004-07-29

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/032545 WO2004034525A2 (en) 2002-10-11 2003-10-14 Current-controlled polarization switching vertical cavity surface emitting laser

Country Status (3)

Country Link
US (2) US7016381B2 (en)
AU (1) AU2003282827A1 (en)
WO (1) WO2004034525A2 (en)

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US7853154B2 (en) * 2006-01-13 2010-12-14 Mindspeed Technologies, Inc. Bias circuit for burst-mode/TDM systems with power save feature
US8110823B2 (en) 2006-01-20 2012-02-07 The Regents Of The University Of California III-V photonic integration on silicon
US8106379B2 (en) * 2006-04-26 2012-01-31 The Regents Of The University Of California Hybrid silicon evanescent photodetectors
US20080002929A1 (en) 2006-06-30 2008-01-03 Bowers John E Electrically pumped semiconductor evanescent laser
US8995493B2 (en) 2009-02-17 2015-03-31 Trilumina Corp. Microlenses for multibeam arrays of optoelectronic devices for high frequency operation
US10038304B2 (en) 2009-02-17 2018-07-31 Trilumina Corp. Laser arrays for variable optical properties
US20130223846A1 (en) 2009-02-17 2013-08-29 Trilumina Corporation High speed free-space optical communications
US10244181B2 (en) 2009-02-17 2019-03-26 Trilumina Corp. Compact multi-zone infrared laser illuminator
US8995485B2 (en) 2009-02-17 2015-03-31 Trilumina Corp. High brightness pulsed VCSEL sources
US8979338B2 (en) 2009-12-19 2015-03-17 Trilumina Corp. System for combining laser array outputs into a single beam carrying digital data
CN102959811B (en) * 2009-12-19 2016-06-29 三流明公司 For combining the system and method for the laser array for numeral output
US8538206B1 (en) 2010-05-05 2013-09-17 Aurrion, Llc Hybrid silicon electro-optic modulator
US8538221B1 (en) * 2010-05-05 2013-09-17 Aurrion, Llc Asymmetric hybrid photonic devices
JP2013021205A (en) * 2011-07-13 2013-01-31 Mitsubishi Electric Corp Plane-emitting laser diode
US11095365B2 (en) 2011-08-26 2021-08-17 Lumentum Operations Llc Wide-angle illuminator module
US8891913B1 (en) * 2012-07-11 2014-11-18 Aurrion, Inc. Heterogeneous semiconductor photonic integrated circuit with multiple offset heights
JP6410008B2 (en) 2013-12-20 2018-10-24 セイコーエプソン株式会社 Surface emitting laser and atomic oscillator
US10097908B2 (en) 2014-12-31 2018-10-09 Macom Technology Solutions Holdings, Inc. DC-coupled laser driver with AC-coupled termination element
CN110073614B (en) 2016-08-30 2022-03-04 Macom技术解决方案控股公司 Driver with distributed architecture
US10630052B2 (en) 2017-10-04 2020-04-21 Macom Technology Solutions Holdings, Inc. Efficiency improved driver for laser diode in optical communication
US11005573B2 (en) 2018-11-20 2021-05-11 Macom Technology Solutions Holdings, Inc. Optic signal receiver with dynamic control
US11658630B2 (en) 2020-12-04 2023-05-23 Macom Technology Solutions Holdings, Inc. Single servo loop controlling an automatic gain control and current sourcing mechanism
DE102021127409A1 (en) 2021-10-21 2023-04-27 Trumpf Photonic Components Gmbh semiconductor device
WO2023112675A1 (en) * 2021-12-14 2023-06-22 ソニーセミコンダクタソリューションズ株式会社 Control device, control method, semiconductor laser device, distance-measuring device, and on-vehicle device

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US5995531A (en) * 1997-11-04 1999-11-30 Motorola, Inc. VCSEL having polarization control and method of making same
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US6631152B2 (en) * 2000-03-29 2003-10-07 Seiko Epson Corporation Surface emitting semiconductor laser and method of manufacturing the same
US6650683B2 (en) * 2000-11-20 2003-11-18 Fuji Xerox Co, Ltd. Surface emitting semiconductor laser

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Also Published As

Publication number Publication date
US7016381B2 (en) 2006-03-21
US20060239308A1 (en) 2006-10-26
US7356064B2 (en) 2008-04-08
AU2003282827A8 (en) 2004-05-04
US20040136418A1 (en) 2004-07-15
WO2004034525A2 (en) 2004-04-22
AU2003282827A1 (en) 2004-05-04

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