WO2004036707A3 - Single mode vcsel - Google Patents

Single mode vcsel Download PDF

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Publication number
WO2004036707A3
WO2004036707A3 PCT/US2003/027685 US0327685W WO2004036707A3 WO 2004036707 A3 WO2004036707 A3 WO 2004036707A3 US 0327685 W US0327685 W US 0327685W WO 2004036707 A3 WO2004036707 A3 WO 2004036707A3
Authority
WO
WIPO (PCT)
Prior art keywords
substrate
active region
opening
lower contact
heat spreading
Prior art date
Application number
PCT/US2003/027685
Other languages
French (fr)
Other versions
WO2004036707A2 (en
Inventor
James A Tatum
Ralph H Johnson
James K Guenter
Original Assignee
Honeywell Int Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Honeywell Int Inc filed Critical Honeywell Int Inc
Priority to EP03808400A priority Critical patent/EP1535377A2/en
Priority to AU2003301360A priority patent/AU2003301360A1/en
Publication of WO2004036707A2 publication Critical patent/WO2004036707A2/en
Publication of WO2004036707A3 publication Critical patent/WO2004036707A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18341—Intra-cavity contacts
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S2301/00—Functional characteristics
    • H01S2301/16—Semiconductor lasers with special structural design to influence the modes, e.g. specific multimode
    • H01S2301/166—Single transverse or lateral mode
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/005—Optical components external to the laser cavity, specially adapted therefor, e.g. for homogenisation or merging of the beams or for manipulating laser pulses, e.g. pulse shaping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/02—Structural details or components not essential to laser action
    • H01S5/0206—Substrates, e.g. growth, shape, material, removal or bonding
    • H01S5/0207—Substrates having a special shape
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18305—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] with emission through the substrate, i.e. bottom emission
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18308—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL] having a special structure for lateral current or light confinement
    • H01S5/18322—Position of the structure
    • H01S5/1833—Position of the structure with more than one structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/10—Construction or shape of the optical resonator, e.g. extended or external cavity, coupled cavities, bent-guide, varying width, thickness or composition of the active region
    • H01S5/18—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities
    • H01S5/183—Surface-emitting [SE] lasers, e.g. having both horizontal and vertical cavities having only vertical cavities, e.g. vertical cavity surface-emitting lasers [VCSEL]
    • H01S5/18361—Structure of the reflectors, e.g. hybrid mirrors
    • H01S5/18369—Structure of the reflectors, e.g. hybrid mirrors based on dielectric materials

Landscapes

  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Semiconductor Lasers (AREA)

Abstract

A VCSEL (100) having a metallic heat spreading layer (128) adjacent a semiconductor buffer layer (122) containing an insulating structure (124). The heat spreading layer (128) includes an opening (130) that enables light emitted by an active region (120) to reflect from a distributed Bragg reflector (DBR) top mirror (132) located above the heat spreading layer (128). A substrate (112) is below the active region (120). A lower contact (114) provides electrical current to that substrate (112). The lower contact (114) includes an opening (115) that enables light emitted from the active region (120) to reflect from a distributed Bragg reflector (DBR) lower mirror (116). Beneficially, the substrate (112) includes a slot that enables light to pass through an opening in the lower contact (114). That slot acts as an alignment structure that enables optical alignment of an external feature to the VCSEL (100).
PCT/US2003/027685 2002-09-03 2003-09-02 Single mode vcsel WO2004036707A2 (en)

Priority Applications (2)

Application Number Priority Date Filing Date Title
EP03808400A EP1535377A2 (en) 2002-09-03 2003-09-02 Single mode vcsel
AU2003301360A AU2003301360A1 (en) 2002-09-03 2003-09-02 Single mode vcsel

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/232,382 US6965626B2 (en) 2002-09-03 2002-09-03 Single mode VCSEL
US10/232,382 2002-09-03

Publications (2)

Publication Number Publication Date
WO2004036707A2 WO2004036707A2 (en) 2004-04-29
WO2004036707A3 true WO2004036707A3 (en) 2004-06-24

Family

ID=31976992

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/027685 WO2004036707A2 (en) 2002-09-03 2003-09-02 Single mode vcsel

Country Status (4)

Country Link
US (1) US6965626B2 (en)
EP (1) EP1535377A2 (en)
AU (1) AU2003301360A1 (en)
WO (1) WO2004036707A2 (en)

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US7860143B2 (en) * 2004-04-30 2010-12-28 Finisar Corporation Metal-assisted DBRs for thermal management in VCSELs
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US6965626B2 (en) 2005-11-15

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