WO2004042802A3 - A method of rapidly thermally annealing multilayer wafers with an edge - Google Patents
A method of rapidly thermally annealing multilayer wafers with an edge Download PDFInfo
- Publication number
- WO2004042802A3 WO2004042802A3 PCT/IB2003/005295 IB0305295W WO2004042802A3 WO 2004042802 A3 WO2004042802 A3 WO 2004042802A3 IB 0305295 W IB0305295 W IB 0305295W WO 2004042802 A3 WO2004042802 A3 WO 2004042802A3
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- edge
- thermally annealing
- rapidly thermally
- multilayer wafers
- multilayer
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
- H01L21/3247—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering for altering the shape, e.g. smoothing the surface
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67103—Apparatus for thermal treatment mainly by conduction
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Abstract
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2005502143A JP4772501B2 (en) | 2002-11-05 | 2003-11-03 | Method for rapid thermal annealing of multi-layer wafers with edges |
AT03772490T ATE528790T1 (en) | 2002-11-05 | 2003-11-03 | METHOD FOR RAPID TEMPING MULTI-LAYER WAFERS WITH ONE EDGE |
AU2003280109A AU2003280109A1 (en) | 2002-11-05 | 2003-11-03 | A method of rapidly thermally annealing multilayer wafers with an edge |
EP03772490A EP1559136B1 (en) | 2002-11-05 | 2003-11-03 | A method of rapidly thermally annealing multilayer wafers with an edge |
Applications Claiming Priority (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR0213810A FR2846786B1 (en) | 2002-11-05 | 2002-11-05 | PROCESS FOR QUICK THERMAL RECOVERY OF CROWN WAFERS |
FRFR02/13810 | 2002-11-05 | ||
FRFR03/00286 | 2003-01-13 | ||
FR0300286A FR2846787B1 (en) | 2002-11-05 | 2003-01-13 | PROCESS FOR QUICK THERMAL RECOVERY OF CROWN WAFERS |
Publications (2)
Publication Number | Publication Date |
---|---|
WO2004042802A2 WO2004042802A2 (en) | 2004-05-21 |
WO2004042802A3 true WO2004042802A3 (en) | 2004-08-12 |
Family
ID=32109208
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2003/005295 WO2004042802A2 (en) | 2002-11-05 | 2003-11-03 | A method of rapidly thermally annealing multilayer wafers with an edge |
Country Status (10)
Country | Link |
---|---|
US (2) | US6853802B2 (en) |
EP (2) | EP2330616A3 (en) |
JP (1) | JP4772501B2 (en) |
KR (1) | KR100814998B1 (en) |
CN (1) | CN100541739C (en) |
AT (1) | ATE528790T1 (en) |
AU (1) | AU2003280109A1 (en) |
FR (2) | FR2846786B1 (en) |
TW (1) | TWI278937B (en) |
WO (1) | WO2004042802A2 (en) |
Families Citing this family (23)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2846786B1 (en) * | 2002-11-05 | 2005-06-17 | PROCESS FOR QUICK THERMAL RECOVERY OF CROWN WAFERS | |
US20080090309A1 (en) * | 2003-10-27 | 2008-04-17 | Ranish Joseph M | Controlled annealing method |
US7127367B2 (en) * | 2003-10-27 | 2006-10-24 | Applied Materials, Inc. | Tailored temperature uniformity |
US8536492B2 (en) * | 2003-10-27 | 2013-09-17 | Applied Materials, Inc. | Processing multilayer semiconductors with multiple heat sources |
JP4826994B2 (en) * | 2004-09-13 | 2011-11-30 | 信越半導体株式会社 | Manufacturing method of SOI wafer |
US7788589B2 (en) * | 2004-09-30 | 2010-08-31 | Microsoft Corporation | Method and system for improved electronic task flagging and management |
DE602004022882D1 (en) * | 2004-12-28 | 2009-10-08 | Soitec Silicon On Insulator | NER LITTLE DENSITY OF HOLES |
FR2880988B1 (en) * | 2005-01-19 | 2007-03-30 | Soitec Silicon On Insulator | TREATMENT OF A LAYER IN SI1-yGEy TAKEN |
JP4786925B2 (en) * | 2005-04-04 | 2011-10-05 | 東京エレクトロン株式会社 | Substrate processing method and substrate processing apparatus |
US7700376B2 (en) * | 2005-04-06 | 2010-04-20 | Applied Materials, Inc. | Edge temperature compensation in thermal processing particularly useful for SOI wafers |
DE602005009159D1 (en) * | 2005-06-10 | 2008-10-02 | Soitec Silicon On Insulator | Calibration method for thermal treatment equipment |
FR2895563B1 (en) * | 2005-12-22 | 2008-04-04 | Soitec Silicon On Insulator | METHOD FOR SIMPLIFYING A FINISHING SEQUENCE AND STRUCTURE OBTAINED BY THE METHOD |
JP5168788B2 (en) * | 2006-01-23 | 2013-03-27 | 信越半導体株式会社 | Manufacturing method of SOI wafer |
FR2899382B1 (en) * | 2006-03-29 | 2008-08-22 | Soitec Silicon On Insulator | METHOD OF MANUFACTURING SOIL STRUCTURES WITH LIMITATION OF SLIDING LINES |
EP1918349A1 (en) * | 2006-10-12 | 2008-05-07 | SOLVAY (Société Anonyme) | Light-emitting material |
US8222574B2 (en) * | 2007-01-15 | 2012-07-17 | Applied Materials, Inc. | Temperature measurement and control of wafer support in thermal processing chamber |
US7860379B2 (en) * | 2007-01-15 | 2010-12-28 | Applied Materials, Inc. | Temperature measurement and control of wafer support in thermal processing chamber |
US8111978B2 (en) * | 2008-07-11 | 2012-02-07 | Applied Materials, Inc. | Rapid thermal processing chamber with shower head |
FR2941324B1 (en) * | 2009-01-22 | 2011-04-29 | Soitec Silicon On Insulator | PROCESS FOR DISSOLVING THE OXIDE LAYER IN THE CROWN OF A SEMICONDUCTOR TYPE STRUCTURE ON AN INSULATION |
US7927975B2 (en) * | 2009-02-04 | 2011-04-19 | Micron Technology, Inc. | Semiconductor material manufacture |
CN102479690B (en) * | 2010-11-23 | 2013-12-11 | 中芯国际集成电路制造(上海)有限公司 | Method for improving uniformity of working current on wafer during source drain annealing |
US9814099B2 (en) * | 2013-08-02 | 2017-11-07 | Applied Materials, Inc. | Substrate support with surface feature for reduced reflection and manufacturing techniques for producing same |
CN108603290B (en) * | 2015-10-01 | 2021-09-10 | 环球晶圆股份有限公司 | CVD apparatus |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4958061A (en) * | 1988-06-27 | 1990-09-18 | Tokyo Electron Limited | Method and apparatus for heat-treating a substrate |
EP0399662A2 (en) * | 1989-05-01 | 1990-11-28 | AT&T Corp. | Procedure for annealing of semiconductors |
US5937142A (en) * | 1996-07-11 | 1999-08-10 | Cvc Products, Inc. | Multi-zone illuminator for rapid thermal processing |
US6051512A (en) * | 1997-04-11 | 2000-04-18 | Steag Rtp Systems | Apparatus and method for rapid thermal processing (RTP) of a plurality of semiconductor wafers |
US6184498B1 (en) * | 1996-03-25 | 2001-02-06 | Sumitomo Electric Industries, Ltd. | Apparatus for thermally processing semiconductor wafer |
WO2001069656A2 (en) * | 2000-03-17 | 2001-09-20 | Mattson Thermal Products Inc. | Localized heating and cooling of substrates |
US20010036219A1 (en) * | 1999-05-03 | 2001-11-01 | Camm David Malcolm | Spatially resolved temperature measurement and irradiance control |
EP1197989A2 (en) * | 2000-10-10 | 2002-04-17 | Ushiodenki Kabushiki Kaisha | Heat treatment device and process with light irradiation |
Family Cites Families (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS62128525A (en) * | 1985-11-29 | 1987-06-10 | Matsushita Electric Ind Co Ltd | Annealing method for compound semiconductor substrate |
EP0511294B1 (en) * | 1990-01-19 | 1996-04-03 | Applied Materials, Inc. | Heating apparatus for semiconductor wafers or substrates |
DE19936081A1 (en) * | 1999-07-30 | 2001-02-08 | Siemens Ag | Device and method for tempering a multilayer body, and a multilayer body produced using the method |
KR100789205B1 (en) * | 2000-03-29 | 2007-12-31 | 신에쯔 한도타이 가부시키가이샤 | Production method for silicon wafer and soi wafer, and soi wafer |
JP2002184961A (en) * | 2000-09-29 | 2002-06-28 | Canon Inc | Soi substrate and thermal treatment method therefor |
TW540121B (en) * | 2000-10-10 | 2003-07-01 | Ushio Electric Inc | Heat treatment device and process with light irradiation |
FR2846786B1 (en) * | 2002-11-05 | 2005-06-17 | PROCESS FOR QUICK THERMAL RECOVERY OF CROWN WAFERS |
-
2002
- 2002-11-05 FR FR0213810A patent/FR2846786B1/en not_active Expired - Lifetime
-
2003
- 2003-01-13 FR FR0300286A patent/FR2846787B1/en not_active Expired - Lifetime
- 2003-11-03 US US10/700,885 patent/US6853802B2/en not_active Expired - Lifetime
- 2003-11-03 WO PCT/IB2003/005295 patent/WO2004042802A2/en active Search and Examination
- 2003-11-03 EP EP10176486A patent/EP2330616A3/en not_active Withdrawn
- 2003-11-03 AU AU2003280109A patent/AU2003280109A1/en not_active Abandoned
- 2003-11-03 CN CNB2003801027637A patent/CN100541739C/en not_active Expired - Lifetime
- 2003-11-03 EP EP03772490A patent/EP1559136B1/en not_active Expired - Lifetime
- 2003-11-03 JP JP2005502143A patent/JP4772501B2/en not_active Expired - Lifetime
- 2003-11-03 KR KR1020057008087A patent/KR100814998B1/en active IP Right Grant
- 2003-11-03 AT AT03772490T patent/ATE528790T1/en not_active IP Right Cessation
- 2003-11-04 TW TW092130768A patent/TWI278937B/en not_active IP Right Cessation
-
2004
- 2004-12-13 US US11/008,928 patent/US7049250B2/en not_active Expired - Lifetime
Patent Citations (9)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4958061A (en) * | 1988-06-27 | 1990-09-18 | Tokyo Electron Limited | Method and apparatus for heat-treating a substrate |
EP0399662A2 (en) * | 1989-05-01 | 1990-11-28 | AT&T Corp. | Procedure for annealing of semiconductors |
US6184498B1 (en) * | 1996-03-25 | 2001-02-06 | Sumitomo Electric Industries, Ltd. | Apparatus for thermally processing semiconductor wafer |
US6235543B1 (en) * | 1996-03-25 | 2001-05-22 | Sumitomo Electric Industries, Ltd. | Method of evaluating a semiconductor wafer |
US5937142A (en) * | 1996-07-11 | 1999-08-10 | Cvc Products, Inc. | Multi-zone illuminator for rapid thermal processing |
US6051512A (en) * | 1997-04-11 | 2000-04-18 | Steag Rtp Systems | Apparatus and method for rapid thermal processing (RTP) of a plurality of semiconductor wafers |
US20010036219A1 (en) * | 1999-05-03 | 2001-11-01 | Camm David Malcolm | Spatially resolved temperature measurement and irradiance control |
WO2001069656A2 (en) * | 2000-03-17 | 2001-09-20 | Mattson Thermal Products Inc. | Localized heating and cooling of substrates |
EP1197989A2 (en) * | 2000-10-10 | 2002-04-17 | Ushiodenki Kabushiki Kaisha | Heat treatment device and process with light irradiation |
Also Published As
Publication number | Publication date |
---|---|
CN100541739C (en) | 2009-09-16 |
TWI278937B (en) | 2007-04-11 |
FR2846786B1 (en) | 2005-06-17 |
EP1559136A2 (en) | 2005-08-03 |
FR2846786A1 (en) | 2004-05-07 |
JP4772501B2 (en) | 2011-09-14 |
WO2004042802A2 (en) | 2004-05-21 |
US6853802B2 (en) | 2005-02-08 |
CN1711629A (en) | 2005-12-21 |
FR2846787A1 (en) | 2004-05-07 |
KR20050062653A (en) | 2005-06-23 |
TW200416895A (en) | 2004-09-01 |
EP2330616A2 (en) | 2011-06-08 |
ATE528790T1 (en) | 2011-10-15 |
US20040151483A1 (en) | 2004-08-05 |
EP1559136B1 (en) | 2011-10-12 |
US7049250B2 (en) | 2006-05-23 |
FR2846787B1 (en) | 2005-12-30 |
AU2003280109A1 (en) | 2004-06-07 |
AU2003280109A8 (en) | 2004-06-07 |
JP2006505959A (en) | 2006-02-16 |
EP2330616A3 (en) | 2011-12-07 |
KR100814998B1 (en) | 2008-03-18 |
US20050094990A1 (en) | 2005-05-05 |
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