WO2004046410A3 - Method of electroless deposition of thin metal and dielectric films with temperature controlled on stages of film growth - Google Patents

Method of electroless deposition of thin metal and dielectric films with temperature controlled on stages of film growth Download PDF

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Publication number
WO2004046410A3
WO2004046410A3 PCT/US2003/036735 US0336735W WO2004046410A3 WO 2004046410 A3 WO2004046410 A3 WO 2004046410A3 US 0336735 W US0336735 W US 0336735W WO 2004046410 A3 WO2004046410 A3 WO 2004046410A3
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WO
WIPO (PCT)
Prior art keywords
temperature
controlled conditions
nuclei
under
film
Prior art date
Application number
PCT/US2003/036735
Other languages
French (fr)
Other versions
WO2004046410A2 (en
Inventor
Igor C Ivanov
Original Assignee
Blue29 Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Blue29 Corp filed Critical Blue29 Corp
Priority to AU2003294308A priority Critical patent/AU2003294308A1/en
Publication of WO2004046410A2 publication Critical patent/WO2004046410A2/en
Publication of WO2004046410A3 publication Critical patent/WO2004046410A3/en

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Classifications

    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1646—Characteristics of the product obtained
    • C23C18/165—Multilayered product
    • C23C18/1651—Two or more layers only obtained by electroless plating
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C18/00—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating
    • C23C18/16—Chemical coating by decomposition of either liquid compounds or solutions of the coating forming compounds, without leaving reaction products of surface material in the coating; Contact plating by reduction or substitution, e.g. electroless plating
    • C23C18/1601—Process or apparatus
    • C23C18/1633—Process of electroless plating
    • C23C18/1675—Process conditions
    • C23C18/168—Control of temperature, e.g. temperature of bath, substrate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
    • H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
    • H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition

Abstract

The method of the invention comprises accumulating experimental data or obtaining existing data with regard to the optimal time-temperature relationship of the deposition process on various film-formation stages for various materials, forming nuclei of a selected material on the surface of the treated object in the first stage under first temperature-controlled conditions for the formation of nuclei of said selected material, converting the nuclei of the aforementioned selected material into island-structured deposited layer of said material by causing lateral growth of the nuclei under second temperature-controlled conditions; converting the island-structure layer into a continuously interconnected cluster structure by causing further lateral growth of said island-structured deposited layer under third temperature-controlled conditions; forming a first continuous film of said material under fourth temperature controlled conditions which provides said first continuous film with predetermined properties; and then completing the formation of a final coating film by growing at least one subsequent continuous film of said material under fifth temperature-controlled conditions until a film of a predetermined thickness is obtained. The fifth temperature-controlled conditions may be characterized by a pulse-mode or step-like variations of temperature in time with rapid cooling or heating for obtaining high degree of crystallinity or for increase in the rate of deposition. The method of the invention could be realized with the use of the electroless deposition apparatus with instantaneous cooling or heating of the object, e.g., a semiconductor substrate, in a deposition chamber.
PCT/US2003/036735 2002-11-19 2003-11-18 Method of electroless deposition of thin metal and dielectric films with temperature controlled on stages of film growth WO2004046410A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003294308A AU2003294308A1 (en) 2002-11-19 2003-11-18 Method of electroless deposition of thin metal and dielectric films with temperature controlled on stages of film growth

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/299,070 2002-11-19
US10/299,070 US7235483B2 (en) 2002-11-19 2002-11-19 Method of electroless deposition of thin metal and dielectric films with temperature controlled stages of film growth

Publications (2)

Publication Number Publication Date
WO2004046410A2 WO2004046410A2 (en) 2004-06-03
WO2004046410A3 true WO2004046410A3 (en) 2004-12-09

Family

ID=32297598

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/036735 WO2004046410A2 (en) 2002-11-19 2003-11-18 Method of electroless deposition of thin metal and dielectric films with temperature controlled on stages of film growth

Country Status (3)

Country Link
US (2) US7235483B2 (en)
AU (1) AU2003294308A1 (en)
WO (1) WO2004046410A2 (en)

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US7138014B2 (en) * 2002-01-28 2006-11-21 Applied Materials, Inc. Electroless deposition apparatus
US7189313B2 (en) * 2002-05-09 2007-03-13 Applied Materials, Inc. Substrate support with fluid retention band
US7235483B2 (en) * 2002-11-19 2007-06-26 Blue29 Llc Method of electroless deposition of thin metal and dielectric films with temperature controlled stages of film growth
US7883739B2 (en) * 2003-06-16 2011-02-08 Lam Research Corporation Method for strengthening adhesion between dielectric layers formed adjacent to metal layers
US7534298B2 (en) * 2003-09-19 2009-05-19 Applied Materials, Inc. Apparatus and method of detecting the electroless deposition endpoint
US7827930B2 (en) * 2004-01-26 2010-11-09 Applied Materials, Inc. Apparatus for electroless deposition of metals onto semiconductor substrates
US7654221B2 (en) * 2003-10-06 2010-02-02 Applied Materials, Inc. Apparatus for electroless deposition of metals onto semiconductor substrates
US7323058B2 (en) * 2004-01-26 2008-01-29 Applied Materials, Inc. Apparatus for electroless deposition of metals onto semiconductor substrates
US7311779B2 (en) * 2003-10-06 2007-12-25 Applied Materials, Inc. Heating apparatus to heat wafers using water and plate with turbolators
US7223308B2 (en) * 2003-10-06 2007-05-29 Applied Materials, Inc. Apparatus to improve wafer temperature uniformity for face-up wet processing
US7256111B2 (en) * 2004-01-26 2007-08-14 Applied Materials, Inc. Pretreatment for electroless deposition
US20060033678A1 (en) * 2004-01-26 2006-02-16 Applied Materials, Inc. Integrated electroless deposition system
US20050173253A1 (en) * 2004-02-05 2005-08-11 Applied Materials, Inc. Method and apparatus for infilm defect reduction for electrochemical copper deposition
US7874260B2 (en) * 2006-10-25 2011-01-25 Lam Research Corporation Apparatus and method for substrate electroless plating
US20060029833A1 (en) * 2004-08-09 2006-02-09 Ivanov Igor C Methods for forming a barrier layer with periodic concentrations of elements and structures resulting therefrom
US20060062897A1 (en) * 2004-09-17 2006-03-23 Applied Materials, Inc Patterned wafer thickness detection system
US7789319B2 (en) * 2006-05-17 2010-09-07 Micron Technology, Inc. System and method for recirculating fluid supply for an injector for a semiconductor fabrication chamber
US8068208B2 (en) 2006-12-01 2011-11-29 Taiwan Semiconductor Manufacturing Company, Ltd. System and method for improving immersion scanner overlay performance
US20080299411A1 (en) * 2007-05-30 2008-12-04 Oladeji Isaiah O Zinc oxide film and method for making
US20090017624A1 (en) * 2007-07-09 2009-01-15 Chih-Hung Liao Nodule Defect Reduction in Electroless Plating
US7972899B2 (en) * 2009-07-30 2011-07-05 Sisom Thin Films Llc Method for fabricating copper-containing ternary and quaternary chalcogenide thin films
US8212617B2 (en) 2010-01-05 2012-07-03 Analog Devices, Inc. Fast class AB output stage
US8685850B2 (en) 2011-06-13 2014-04-01 Stmicroelectronics, Inc. System and method of plating conductive gate contacts on metal gates for self-aligned contact interconnections
US11685999B2 (en) * 2014-06-02 2023-06-27 Macdermid Acumen, Inc. Aqueous electroless nickel plating bath and method of using the same
JP6688590B2 (en) * 2015-10-22 2020-04-28 ソニーモバイルコミュニケーションズ株式会社 Human body communication device, human body communication method and program
WO2018075972A1 (en) 2016-10-21 2018-04-26 Quantumscape Corporation Electrolyte separators including lithium borohydride and composite electrolyte separators of lithium-stuffed garnet and lithium borohydride
CN110791751A (en) * 2019-11-27 2020-02-14 衡阳市晋宏精细化工有限公司 PCB board copper plating equipment

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020086102A1 (en) * 2001-01-02 2002-07-04 John Grunwald Method and apparatus for improving interfacial chemical reactions in electroless depositions of metals
US20040052963A1 (en) * 2002-08-08 2004-03-18 Igor Ivanov Method and apparatus for electroless deposition with temperature-controlled chuck

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US5389496A (en) 1987-03-06 1995-02-14 Rohm And Haas Company Processes and compositions for electroless metallization
US5775416A (en) * 1995-11-17 1998-07-07 Cvc Products, Inc. Temperature controlled chuck for vacuum processing
US5830805A (en) * 1996-11-18 1998-11-03 Cornell Research Foundation Electroless deposition equipment or apparatus and method of performing electroless deposition
WO2000003072A1 (en) 1998-07-10 2000-01-20 Semitool, Inc. Method and apparatus for copper plating using electroless plating and electroplating
WO2002034962A1 (en) 2000-10-26 2002-05-02 Ebara Corporation Device and method for electroless plating
JP2002305311A (en) * 2001-01-31 2002-10-18 Shin Etsu Handotai Co Ltd Method of manufacturing solar battery and solar battery
US6913651B2 (en) 2002-03-22 2005-07-05 Blue29, Llc Apparatus and method for electroless deposition of materials on semiconductor substrates
US6875691B2 (en) * 2002-06-21 2005-04-05 Mattson Technology, Inc. Temperature control sequence of electroless plating baths
US6908512B2 (en) 2002-09-20 2005-06-21 Blue29, Llc Temperature-controlled substrate holder for processing in fluids
US7235483B2 (en) 2002-11-19 2007-06-26 Blue29 Llc Method of electroless deposition of thin metal and dielectric films with temperature controlled stages of film growth

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020086102A1 (en) * 2001-01-02 2002-07-04 John Grunwald Method and apparatus for improving interfacial chemical reactions in electroless depositions of metals
US20040052963A1 (en) * 2002-08-08 2004-03-18 Igor Ivanov Method and apparatus for electroless deposition with temperature-controlled chuck

Also Published As

Publication number Publication date
AU2003294308A8 (en) 2004-06-15
AU2003294308A1 (en) 2004-06-15
US7235483B2 (en) 2007-06-26
US20040097071A1 (en) 2004-05-20
WO2004046410A2 (en) 2004-06-03
US7648913B2 (en) 2010-01-19
US20070014923A1 (en) 2007-01-18

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