WO2004049049A1 - Pockels cell - Google Patents
Pockels cell Download PDFInfo
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- WO2004049049A1 WO2004049049A1 PCT/EP2003/013291 EP0313291W WO2004049049A1 WO 2004049049 A1 WO2004049049 A1 WO 2004049049A1 EP 0313291 W EP0313291 W EP 0313291W WO 2004049049 A1 WO2004049049 A1 WO 2004049049A1
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Classifications
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- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F1/00—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
- G02F1/01—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour
- G02F1/03—Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour based on ceramics or electro-optical crystals, e.g. exhibiting Pockels effect or Kerr effect
- G02F1/0305—Constructional arrangements
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S3/00—Lasers, i.e. devices using stimulated emission of electromagnetic radiation in the infrared, visible or ultraviolet wave range
- H01S3/10—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating
- H01S3/106—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity
- H01S3/107—Controlling the intensity, frequency, phase, polarisation or direction of the emitted radiation, e.g. switching, gating, modulating or demodulating by controlling devices placed within the cavity using electro-optic devices, e.g. exhibiting Pockels or Kerr effect
-
- G—PHYSICS
- G02—OPTICS
- G02F—OPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
- G02F2201/00—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00
- G02F2201/16—Constructional arrangements not provided for in groups G02F1/00 - G02F7/00 series; tandem
Definitions
- the invention relates to a Pockels cell according to the preamble of the main claim, preferably for use in laser resonators with at least one cylindrical crystal having an axis and having a cylinder jacket and two mutually parallel planar end faces as the crystal entrance and exit faces.
- Pockels cells are in the form of vertical cylinders, e.g. Cuboids known.
- a disadvantage of this known Pockels cell is the fact that the beam reflected on the optical surface of the crystal entrance surface runs back antiparallel to the direction of the incident beam, which can lead to undesired superimposition and is known as the etalon effect.
- this is undesirable in an RTP-Pockels cell, in which, due to the thermal compensation arrangement, two identical crystals coinciding with their axis, arranged one behind the other and at a distance from one another, are used because there are two additional interfaces between the two crystals with the undesired effects.
- BESTATIGUNGSKOPIE The invention has for its object to develop a generic Pockels cell so that undesired superimposition of the reflected light beam caused by the etalon effect are minimized.
- This design has the advantage that the light beam reflected at the crystal entrance surface is reflected in another direction.
- the light beam emerging at the crystal exit surface is parallel to the input light beam, but not colinear because of the beam offset, so that both light beams run at least parallel to the axis of the crystal.
- two identical crystals coinciding with respect to their axis, arranged one behind the other and at a distance from one another, are arranged in such a way that both the first crystal and the second crystal deviate from its zero degree degree at its crystal entrance window its crystal input surface has a second angle corresponding to the first and that both angles are in the same plane in which the axis is arranged.
- the crystal or crystals is or are preferably designed as RTP crystals.
- the beam offset, which the first crystal forms, is compensated by the amount and direction of the second crystal, so that the light beam emerging from the crystal exit surface of the second crystal is not only parallel to the light beam entering the crystal entrance surface of the first crystal, but is also arranged colinear to it. At the same time, all reflections and thus superimpositions of the reflected returning light wave are prevented.
- FIG. 2 shows a cross section according to FIG. 1 with two RTP crystals arranged one behind the other for the purpose of temperature compensation.
- the Pockels cell shown in FIG. 1, denoted overall by 5, has a housing denoted overall by 6 and a holder, denoted overall by 8 in its through opening 7, for two identical ones which coincide with their axis 9, are arranged one behind the other and at a distance from one another Crystals 10A and 10B, each of which has a crystal input surface 11A and 12A and a crystal output surface 12A and 12B, and a cladding 14A and 14B symmetrical with respect to the axis 9.
- the beam path and the exact arrangement of the crystals 10A and 10B can be seen from this.
- the crystal input surface ILA of the first crystal 10A has a first angle ⁇ deviating from zero with its plane normal 15A and the crystal input surface 11B of the second crystal 10B with its plane normal 15B has the second angle ⁇ , both of which are different from zero.
- the crystal entrance surface 11a of the crystal 10a is arranged parallel to the crystal exit surface 12a.
- the first angle ⁇ corresponds to the amount after the second angle ⁇ , it is only directed differently. Both angles are also in one and the same plane, in which the axis 9 is located, which pierces the crystal entrance and exit surfaces through the center of the surface in question.
- FIG. 2 shows the schematic beam path of a light beam 16 incident together with the axis 9 on the crystal entry surface 11A of the first crystal 10A.
- this light beam is refracted from the axis 9, as shown schematically by 16A, and occurs at a distance at the crystal exit surface 12a but parallel to the axis 9 as a light beam 16C up to the crystal entrance surface 11B of the second crystal 10B.
- There it is refracted again as a light beam 16B to the axis of the crystal 9 and emerges from the crystal exit surface 12b of the second crystal 10b at the same point as the axis 9 and coincides with it, as shown schematically at 16 in the right part of FIG.
- This arrangement ensures that neither the first crystal nor the second crystal can reflect the input light beam 16 in a non-colinear manner at the crystal input surface, so that undesired superimpositions cannot occur.
Abstract
The invention relates to a Pockels cell (5) which is used for a laser resonator. The inventive Pockels comprises at least one cylindrical crystal (10A, 10B) having a cylindrical side surface (14A, 14B), an axis (9) and two flat and parallel input surfaces (11A) and an output surface (11B) of said crystal. Said invention is characterised in that the crystal (10A) is embodied in the form of a nonvertical cylinder whose first angle ( alpha ) is formed between the axis (9) of said crystal and a normal (15A) to the plane of the input surface thereof and is greater than zero degree.
Description
POCKELSZELLE Pockels cell
Die Erfindung betrifft eine Pockelszelle gemäß dem Oberbegriff des Hauptanspruchs, vorzugsweise zum Einsatz in Laserresonatoren mit zumindest einem, eine Achse aufweisenden zylinderförmigen Kristall mit einem Zylindermantel und zwei zueinander parallelen ebenen Stirnflächen als Kristalleingangs- sowie Kristallausgangsfläche .The invention relates to a Pockels cell according to the preamble of the main claim, preferably for use in laser resonators with at least one cylindrical crystal having an axis and having a cylinder jacket and two mutually parallel planar end faces as the crystal entrance and exit faces.
Solche Pockelszellen sind in Form von senkrechten Zylindern, z.B. Quadern bekannt.Such Pockels cells are in the form of vertical cylinders, e.g. Cuboids known.
Von Nachteil bei dieser bekannten Pockelszelle ist die Tatsache, daß der an der optischen Oberfläche der Kristalleintrittsfläche reflektierte Strahl antiparallel zur Richtung des einfallenden Strahl zurückverläuft, was zu unerwünschten Überlagerungen führen kann und als Etalon-Effekt bekannt ist. Insbesondere ist dies bei einer RTP-Pockelszelle unerwünscht, bei welcher aufgrund der thermischen Kompensationsanordnung zwei mit ihrer Achse zusammenfallende, hintereinander und mit Abstand voneinander angeordnete identische Kristalle verwendet werden, weil hier zwei zusätzliche Grenzflächen zwischen den beiden Kristallen mit den unerwünschten Effekten vorhanden sind.A disadvantage of this known Pockels cell is the fact that the beam reflected on the optical surface of the crystal entrance surface runs back antiparallel to the direction of the incident beam, which can lead to undesired superimposition and is known as the etalon effect. In particular, this is undesirable in an RTP-Pockels cell, in which, due to the thermal compensation arrangement, two identical crystals coinciding with their axis, arranged one behind the other and at a distance from one another, are used because there are two additional interfaces between the two crystals with the undesired effects.
BESTATIGUNGSKOPIE
Der Erfindung liegt die Aufgabe zugrunde, eine gattungsgemäße Pockelszelle so weiterzubilden, daß durch den Etalon-Effekt verursachte unerwünschte Überlagerungen des reflektierten Lichtstrahls minimiert werden.BESTATIGUNGSKOPIE The invention has for its object to develop a generic Pockels cell so that undesired superimposition of the reflected light beam caused by the etalon effect are minimized.
Diese Aufgabe wird bei einer gattungsgemäßen Pockelszelle gemäß dem Oberbegriff des Hauptanspruchs erfindungsgemäß durch dessen kennzeichnende Merkmale, nämlich dadurch gelöst, daß der Kristall als nicht senkrechter Zylinder mit einem von Null Grad abweichenden ersten Winkel zwischen seiner Achse und dem Vektor der Ebenen-Normale der Kristalleingangsfläche ausgebildet ist.This object is achieved in a generic Pockels cell according to the preamble of the main claim according to the invention by its characterizing features, namely in that the crystal is formed as a non-vertical cylinder with a non-zero degree first angle between its axis and the vector of the plane normal of the crystal entrance surface is.
Durch diese Ausbildung hat man den Vorteil, daß der an der Kristalleingangsfläche reflektierte Lichtstrahl in anderer Richtung reflektiert wird. Der an der Kristallausgangsfläche austretende Lichtstrahl ist zwar zu dem Eingangslichtstrahl parallel, nicht jedoch wegen des Strahlversatzes kolinear, so daß beide Lichtstrahlen zumindest parallel zur Achse des Kristalls verlaufen.This design has the advantage that the light beam reflected at the crystal entrance surface is reflected in another direction. The light beam emerging at the crystal exit surface is parallel to the input light beam, but not colinear because of the beam offset, so that both light beams run at least parallel to the axis of the crystal.
In zweckmäßiger Ausgestaltung der Erfindung wird bei einer zwecks Temperaturkompensation aus zwei bezüglich ihrer Achse zusammenfallenden, hintereinander und mit Abstand voneinander angeordneten identischen Kristallen diese so angeordnet, daß sowohl der erste Kristall an seinem Kristalleingangsfenster den von Null Grad abweichenden ersten Winkel als auch der zweite Kristall an seiner Kristalleingangsfläche einen dem ersten entsprechenden zweiten Winkel aufweist und daß
hierbei beide Winkel in ein- und derselben Ebene liegen, in der auch die Achse angeordnet ist. Vorzugsweise ist bzw. sind der bzw. die Kristalle als RTP-Kristalle ausgebildet. Durch diese Anordnung wird der Strahlversatz, den der erste Kristall bildet, durch den zweiten Kristall nach Betrag und Richtung wiederum kompensiert, so daß der aus der Kristallaustrittsfläche des zweiten Kristalls austretende Lichtstrahl nicht nur parallel zu dem an der Kristalleingangsfläche des ersten Kristalls eintretenden Lichtstrahls parallel, sondern ist überdies kolinear zu diesem angeordnet. Zugleich werden alle Reflexe und damit Überlagerungen der reflektierten rücklaufenden Lichtwelle unterbunden.In an expedient embodiment of the invention, for the purpose of temperature compensation, two identical crystals coinciding with respect to their axis, arranged one behind the other and at a distance from one another, are arranged in such a way that both the first crystal and the second crystal deviate from its zero degree degree at its crystal entrance window its crystal input surface has a second angle corresponding to the first and that both angles are in the same plane in which the axis is arranged. The crystal or crystals is or are preferably designed as RTP crystals. With this arrangement, the beam offset, which the first crystal forms, is compensated by the amount and direction of the second crystal, so that the light beam emerging from the crystal exit surface of the second crystal is not only parallel to the light beam entering the crystal entrance surface of the first crystal, but is also arranged colinear to it. At the same time, all reflections and thus superimpositions of the reflected returning light wave are prevented.
Zweckmäßige Ausgestaltungen und Weiterbildungen der Erfindung sind in den Unteransprüchen gekennzeichnet .Expedient refinements and developments of the invention are characterized in the subclaims.
Ein bevorzugtes Ausführungsbeispiel der Erfindung wird nachfolgend unter Bezugnahme näher erläutert . In dieser zeigt :A preferred embodiment of the invention is explained in more detail below with reference. In this shows:
Figur 1 eine Pockelzelle im schematischen Querschnitt und1 shows a Pockelz cell in schematic cross section and
Figur 2 einen Querschnitt gemäß Figur 1 mit zwei zwecks Temperaturkompensation hintereinander angeordneten RTP-Kristallen.2 shows a cross section according to FIG. 1 with two RTP crystals arranged one behind the other for the purpose of temperature compensation.
Die in Figur 1 gezeigte, insgesamt mit 5 bezeichnete Pockelszelle weist ein insgesamt mit 6 bezeichnetes Gehäuse und eine in deren Durchgangsöffnung 7 insgesamt mit 8 bezeichnete Halterung für zwei mit ihrer Achse 9 zusammenfallende, hintereinander und mit Abstand voneinander angeordnete, identische
Kristalle 10A und 10B auf, von denen jeder eine Kristalleingangsfläche 11A und 12A und eine Kristallausgangsfläche 12A und 12B sowie einen bezüglich der Achse 9 symmetrischen Mantel 14A und 14B auf.The Pockels cell shown in FIG. 1, denoted overall by 5, has a housing denoted overall by 6 and a holder, denoted overall by 8 in its through opening 7, for two identical ones which coincide with their axis 9, are arranged one behind the other and at a distance from one another Crystals 10A and 10B, each of which has a crystal input surface 11A and 12A and a crystal output surface 12A and 12B, and a cladding 14A and 14B symmetrical with respect to the axis 9.
Der prinzipielle Aufbau der beiden Kristalle bezüglich ihrer gemeinsamen Achse 9 ist schematisch in Figur 2 dargestellt.The basic structure of the two crystals with respect to their common axis 9 is shown schematically in FIG.
Der Strahlenverlauf und die genaue Anordnung der Kristalle 10A und 10B sind daraus ersichtlich. Die Kristalleingangsfläche ILA des ersten Kristalls 10A weist mit dessen Ebenen-Normale 15A einen von Null abweichenden ersten Winkel α und die Kristalleingangsfläche 11B des zweiten Kristalls 10B mit seiner Ebenen-Normale 15B den zweiten Winkel ß auf, die beide von Null verschieden sind. Die Kristalleingangsfläche 11a des Kristalls 10a ist hierbei parallel zu der Kristallausgangsfläche 12a angeordnet. Dasselbe gilt für den zweiten Kristall 10B. Hierbei entspricht der erste Winkel α dem Betrage nach dem zweiten Winkel ß, er ist lediglich anders gerichtet. Beide Winkel liegen überdies in ein- und derselben Ebene, in der auch die Achse 9 liegt, die die Kristalleingangs- und ausgangsflächen jeweils durch die Mitte der betreffenden Fläche durchsticht .The beam path and the exact arrangement of the crystals 10A and 10B can be seen from this. The crystal input surface ILA of the first crystal 10A has a first angle α deviating from zero with its plane normal 15A and the crystal input surface 11B of the second crystal 10B with its plane normal 15B has the second angle β, both of which are different from zero. The crystal entrance surface 11a of the crystal 10a is arranged parallel to the crystal exit surface 12a. The same applies to the second crystal 10B. Here, the first angle α corresponds to the amount after the second angle β, it is only directed differently. Both angles are also in one and the same plane, in which the axis 9 is located, which pierces the crystal entrance and exit surfaces through the center of the surface in question.
Hierbei ist in Figur 2 der schematische Strahlengang eines zusammen mit der Achse 9 an der Kristalleintrittsfläche 11A des ersten Kristalls 10A einfallenden Lichtstrahls 16 gezeigt. In dem ersten Kristall 10A wird dieser Lichtstrahl von der Achse 9, wie schematisch mit 16A gezeigt, weggebrochen und tritt an der Kristallausgangsfläche 12a mit Abstand
aber parallel zu der Achse 9 als Lichtstrahl 16C bis zu der Kristalleingangsfläche 11B des zweiten Kristalls 10B ein. Dort wird er als Lichtstrahl 16B wieder zu der Achse des Kristalls 9 hingebrochen und tritt an derselben Stelle wie die Achse 9 aus der Kristallausgangsfläche 12b des zweiten Kristalls 10b aus und verläuft mit diesem zusammenfallend, wie mit 16 schematisch im rechten Teil von Figur 2 gezeigt.2 shows the schematic beam path of a light beam 16 incident together with the axis 9 on the crystal entry surface 11A of the first crystal 10A. In the first crystal 10A, this light beam is refracted from the axis 9, as shown schematically by 16A, and occurs at a distance at the crystal exit surface 12a but parallel to the axis 9 as a light beam 16C up to the crystal entrance surface 11B of the second crystal 10B. There it is refracted again as a light beam 16B to the axis of the crystal 9 and emerges from the crystal exit surface 12b of the second crystal 10b at the same point as the axis 9 and coincides with it, as shown schematically at 16 in the right part of FIG.
Durch diese Anordnung ist sichergestellt, daß weder an dem ersten Kristall, noch dem zweiten Kristall, der Eingangslichtstrahl 16 nicht kolinear zu diesem an der Kristalleingangsfläche reflektiert werden kann, wodurch es nicht zu unerwünschten Überlagerungen kommen kann.
This arrangement ensures that neither the first crystal nor the second crystal can reflect the input light beam 16 in a non-colinear manner at the crystal input surface, so that undesired superimpositions cannot occur.
Claims
1. Pockelszelle (5), vorzugsweise zum Einsatz in Laserresonatoren mit zumindest einem, eine Achse (9) aufweisenden zylinderförmigen Kristall (10A,10B) mit einem Zylindermantel (14A,14B) und mit zwei zueinander parallelen ebenen Stirnflächen als Kristalleingangs- (HA,llb) sowie1. Pockels cell (5), preferably for use in laser resonators with at least one cylindrical crystal (10A, 10B) having an axis (9) with a cylinder jacket (14A, 14B) and with two mutually flat end faces as crystal input (HA, llb) as well
Kristallausgangsflächen (12A,12B), d a d u r c h g e k e n n z e i c h n e t, daß der Kristall (10A) als nicht senkrechter Zylinder mit einem von Null Grad abweichenden ersten Winkel (α) zwischen seiner Achse (9) und der Ebenen-Normalen (15A) der Kristalleingangsfläche (11A) ausgebildet ist.Crystal exit faces (12A, 12B), characterized in that the crystal (10A) is designed as a non-perpendicular cylinder with a non-zero degree first angle (α) between its axis (9) and the plane normal (15A) of the crystal entrance face (11A) is.
2. Pockelszelle (5) nach Anspruch 1, dadurch gekennzeichnet, daß der Kristall (10A,10B) als Kreiszylinder ausgebildet ist.2. Pockels cell (5) according to claim 1, characterized in that the crystal (10A, 10B) is designed as a circular cylinder.
3. Pockelszelle (5) bestehend aus zwecks Temperaturkompensation zwei bezüglich ihrer Achse zusammenfallenden, hintereinander und mit Abstand voneinander angeordneten, identischen Kristallen (10A,10B) nach Anspruch 1 oder 2, dadurch gekennzeichnet, daß sowohl der erste Kristall (10A) an seiner Kristalleingangsfläche (11A) den von Null abweichenden ersten Winkel (α) als auch der zweite Kristall (10B) an seiner Kristalleingangsfläche (11B) den dem ersten entsprechenden zweiten Winkel (ß) aufweist und daß sowohl der erste als auch der zweite Winkel in ein und derselben Ebene liegen, in der auch die Achse (9) angeordnet ist.3. Pockels cell (5) consisting of for the purpose of temperature compensation two coincident with respect to their axis, one behind the other and spaced apart, identical crystals (10A, 10B) according to claim 1 or 2, characterized in that both the first crystal (10A) on its crystal input surface (11A) the non-zero first angle (α) as well as the second Crystal (10B) on its crystal entrance surface (11B) has the second angle (β) corresponding to the first and that both the first and the second angle lie in one and the same plane in which the axis (9) is arranged.
4. Pockelszelle (5) nach einem der Ansprüche 1 bis 3, dadurch gekennzeichnet, daß der Kristall als RTP-Kristall ausgebildet ist. 4. Pockels cell (5) according to one of claims 1 to 3, characterized in that the crystal is designed as an RTP crystal.
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE2002155303 DE10255303A1 (en) | 2002-11-27 | 2002-11-27 | Pockels cell |
DE10255303.3 | 2002-11-27 |
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WO2004049049A1 true WO2004049049A1 (en) | 2004-06-10 |
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PCT/EP2003/013291 WO2004049049A1 (en) | 2002-11-27 | 2003-11-26 | Pockels cell |
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DE (1) | DE10255303A1 (en) |
WO (1) | WO2004049049A1 (en) |
Families Citing this family (1)
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GB2564099B (en) * | 2017-06-29 | 2022-01-26 | M Squared Lasers Ltd | Electro-Optic Modulator |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3949323A (en) * | 1974-03-14 | 1976-04-06 | E. I. Du Pont De Nemours & Company | Crystals of (K, Rb, NH4)TiO(P, As)O4 and their use in electrooptic devices |
US3965439A (en) * | 1974-12-03 | 1976-06-22 | The United States Of America As Represented By The Secretary Of The Army | Electrooptic-Q-switching system for a laser |
US3983507A (en) * | 1975-01-06 | 1976-09-28 | Research Corporation | Tunable laser systems and method |
EP0075435A2 (en) * | 1981-09-22 | 1983-03-30 | J.K. Lasers Limited | Electro-optic cells |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3529885A (en) * | 1967-09-01 | 1970-09-22 | Sylvania Electric Prod | Temperature compensated birefringent networks |
US5157539A (en) * | 1991-01-22 | 1992-10-20 | Cleveland Crystals, Inc | Multi-element electrooptic modulators with crystal axes oriented obliquely to direction of electric field |
FR2772149B1 (en) * | 1997-12-09 | 2003-05-09 | Commissariat Energie Atomique | POCKEL CELL AND OPTICAL POCKEL CELL SWITCH |
-
2002
- 2002-11-27 DE DE2002155303 patent/DE10255303A1/en not_active Ceased
-
2003
- 2003-11-26 WO PCT/EP2003/013291 patent/WO2004049049A1/en active Application Filing
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3949323A (en) * | 1974-03-14 | 1976-04-06 | E. I. Du Pont De Nemours & Company | Crystals of (K, Rb, NH4)TiO(P, As)O4 and their use in electrooptic devices |
US3965439A (en) * | 1974-12-03 | 1976-06-22 | The United States Of America As Represented By The Secretary Of The Army | Electrooptic-Q-switching system for a laser |
US3983507A (en) * | 1975-01-06 | 1976-09-28 | Research Corporation | Tunable laser systems and method |
EP0075435A2 (en) * | 1981-09-22 | 1983-03-30 | J.K. Lasers Limited | Electro-optic cells |
Non-Patent Citations (1)
Title |
---|
D.MILAM: "Brewster-Angle Pockels Cell Design", APPLIED OPTICS, vol. 12, no. 3, March 1973 (1973-03-01), pages 602 - 606, XP002273899 * |
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