WO2004049168A1 - メモリモジュール、メモリシステム、及び情報機器 - Google Patents
メモリモジュール、メモリシステム、及び情報機器 Download PDFInfo
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- WO2004049168A1 WO2004049168A1 PCT/JP2003/015165 JP0315165W WO2004049168A1 WO 2004049168 A1 WO2004049168 A1 WO 2004049168A1 JP 0315165 W JP0315165 W JP 0315165W WO 2004049168 A1 WO2004049168 A1 WO 2004049168A1
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- memory
- random access
- data
- access memory
- dynamic random
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Classifications
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/005—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor comprising combined but independently operative RAM-ROM, RAM-PROM, RAM-EPROM cells
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F12/00—Accessing, addressing or allocating within memory systems or architectures
- G06F12/02—Addressing or allocation; Relocation
- G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/21—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements
- G11C11/34—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices
- G11C11/40—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors
- G11C11/401—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using electric elements using semiconductor devices using transistors forming cells needing refreshing or charge regeneration, i.e. dynamic cells
- G11C11/4063—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing
- G11C11/407—Auxiliary circuits, e.g. for addressing, decoding, driving, writing, sensing or timing for memory cells of the field-effect type
- G11C11/4072—Circuits for initialization, powering up or down, clearing memory or presetting
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
- G11C7/20—Memory cell initialisation circuits, e.g. when powering up or down, memory clear, latent image memory
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
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- G06F12/02—Addressing or allocation; Relocation
- G06F12/06—Addressing a physical block of locations, e.g. base addressing, module addressing, memory dedication
- G06F12/0638—Combination of memories, e.g. ROM and RAM such as to permit replacement or supplementing of words in one module by words in another module
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- G—PHYSICS
- G06—COMPUTING; CALCULATING OR COUNTING
- G06F—ELECTRIC DIGITAL DATA PROCESSING
- G06F2212/00—Indexing scheme relating to accessing, addressing or allocation within memory systems or architectures
- G06F2212/20—Employing a main memory using a specific memory technology
- G06F2212/202—Non-volatile memory
- G06F2212/2022—Flash memory
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48135—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip
- H01L2224/48137—Connecting between different semiconductor or solid-state bodies, i.e. chip-to-chip the bodies being arranged next to each other, e.g. on a common substrate
Definitions
- the present invention relates to a memory system including a dynamic random access memory (DRAM) and a method for controlling the memory system.
- DRAM dynamic random access memory
- a composite semiconductor memory in which a flash memory (32 Mbit capacity) and a static random access memory (SRAM (4 Mbit capacity)) are integrated into a FBGA (Fine pitch 'Ball Grid Array) type package with a stack chip There is.
- the flash memory and the SRAM share the same address input and data input / output terminals for the input / output electrodes of the FBGA type package.
- each control terminal is independent (for example, "composite memory (stacked CSP) flash memory + RAM data sheet", model LRS138Q, [online], Corporation, [Search August 21, 2004], Internet URL: http: // w. Sharp, co.jp/products/device/flash/cmlist. ).
- a system including a flash memory, a cache memory, a controller and a CPU which are treated as a main storage device (for example, see FIG. 1 of Japanese Patent Application Laid-Open No. 07-146.820).
- semiconductor memories consisting of flash memory, DRAM, and transfer control circuits. (For example, see FIG. 2 of JP-A-2001-5723). Disclosure of the invention
- the information processing device PRC consists of a central processing unit CPU and an SRAM controller.
- the memory module MCM consists of NOR type 7 rush memory NOR FLASH and SRAM.
- the information processing device PRC accesses the memory module MCM through the SRAM interface (SRAM IF) to read and write data.
- the information processing device PRC After power-on, the information processing device PRC reads the boot data stored in the NOR flash memory NOR FLASH and starts up itself. After that, 'the information processing unit PRC reads application programs from the N0R type flash memory NOR FLASH as necessary, and executes them on the central processing unit CPU.
- the SRAM functions as a work memory, and stores the results of calculations by the central processing unit CPU.
- the N0R type flash memory used in mobile phones is an N0R type flash memory using a memory array method called an N0R configuration.
- the N0R type is an array configuration in which the parasitic resistance of the memory cell array is kept low.
- One metal bit line contact is provided for every two memory cells connected in parallel to reduce the resistance. Therefore, the read time is about 80 ns, which is almost equal to the read time of the SRAM.
- Typical large-capacity flash memories include AND flash memories using an AND configuration for memory arrays and NAND flash memories using a NAND configuration. These flash memories provide one bit line contact for 16 to 128 cells, so that a high-density memory array can be realized. Therefore, the area per 1-bit memory cell can be made smaller than that of a NOR flash memory, and the capacity can be increased.
- the read time until the first data was output was as slow as about 25 ⁇ s to 50 ⁇ s, and the consistency with SRAM could not be obtained.
- one of the objects of the present invention is to provide a memory system including a ROM and a RAM which has a large storage capacity and can read and write at high speed.
- An information processing device a flash memory, an SRAM, and a DRAM including a plurality of memory banks mounted on one sealing body, and an electrode for wiring the semiconductor chip to the sealing body; and a sealing body.
- An electrode is provided for connection between the sealing member and the outside of the sealing member.
- a memory controller is connected to the SRAM, DRAM and flash memory in order to speed up the read time for the data read request in the flash memory from the information processing device.
- To transfer data from flash memory to flash memory and to transfer data from flash memory to DRAM or from DRAM to flash memory. After the power is turned on and when a transfer command is issued, it is preferable to control the transfer of at least a part of the data of the flash memory to the SRAM and DRAM by the memory controller. Further, even while the memory controller is performing data transfer between the flash memory and the DRAM, the information processing device accepts read and write access to the DRAM from the information processing device, and reads and writes data at high speed. Control may be performed as follows.
- the data transfer between the flash memory and the DRAM within the semiconductor device can be performed at the pack ground.
- the memory controller also performs refresh control of the DRAM when data is transferred from the flash memory to the DRAM after the power is turned on.
- the DRAM is auto-refreshed.
- the DRAM enters the self-refresh state.
- the self-refresh release command is issued from outside the semiconductor device. It is better to control to release the self-refresh state.
- the automatic refresh from the information processing device may be controlled to stop the automatic refresh by the memory controller.
- FIG. 1 is a configuration diagram of a memory system to which the present invention is applied.
- FIG. 2 is an explanatory diagram showing an example of an address map of the memory system to which the present invention is applied
- FIG. 3 is a diagram showing an example of an operation when the power of the memory system to which the present invention is applied is turned on
- FIG. Figure showing an example of the initial settings of the DRAM when the power of the used memory system is turned on.
- FIG. 5 is a diagram showing an example of the initial setting of the DRAM when the power of the memory module to which the present invention is applied is turned on.
- FIG. 6 is a diagram showing a flow of a data transfer operation from the FLASH to the SRAM when the power of the memory system to which the present invention is applied is turned on;
- FIG. 7 is a diagram showing a flow of a data transfer operation from a FLASH to a DRAM when a power supply of a memory system to which the present invention is applied is turned on.
- FIG. 8 is a flow chart showing the flow of data transfer operation from FLASH to DRAM in the memory system of the present invention.
- FIG. 9 is a flowchart showing the flow of data transfer operation from DRAM to FLASH of the memory system of the present invention.
- FIG. 10 is a flowchart showing the flow of data transfer operation from FLASH to SRAM in the memory system of the present invention.
- Figure 11 Flow of data transfer operation from SRAM to FLASH in the memory system of the present invention Flow chart showing
- FIG. 12 is a block diagram showing a configuration example of the FLASH shown in FIG. 1,
- FIG. 13 is a timing chart showing an example of reading data from the FLASH shown in FIG.
- FIG. 14 is a configuration diagram of a memory system to which the present invention is applied.
- FIG. 15 is a block diagram showing one configuration example of the FLASH shown in FIG.
- FIG. 16 is a timing chart showing an example of reading data from the FLASH shown in FIG.
- FIG. 17 is a configuration diagram of a memory system to which the present invention is applied.
- FIG. 18 is a configuration diagram of a memory system to which the present invention is applied.
- FIG. 19 is a block diagram showing one configuration example of the FLASH shown in FIG.
- FIG. 20 is a timing chart showing an example of reading data from the FLASH shown in FIG.
- FIG. 21 is a configuration diagram of a memory system to which the present invention is applied.
- FIG. 22 is a configuration diagram of a memory system to which the present invention is applied.
- FIG. 23 shows an example of an address map of a memory system to which the present invention is applied.
- FIG. 24 is a configuration diagram of a memory system to which the present invention is applied.
- FIG. 25 is a diagram showing an example of an implementation of a memory system according to the present invention.
- FIG. 26 is a diagram showing an example of an implementation of a memory system according to the present invention.
- FIG. 27 is a diagram showing an example of an implementation of a memory system according to the present invention.
- FIG. 28 is a diagram showing a modification of the implementation of the memory system according to the present invention.
- FIG. 29 is a diagram showing an example of the implementation of the memory system according to the present invention.
- FIG. 30 is a block diagram showing a configuration example of a mobile phone using the memory system according to the present invention.
- FIG. 31 is a block diagram showing a configuration example of a mobile phone using the memory system according to the present invention.
- Fig. 32 is a block diagram showing an example of the conventional memory configuration used in mobile phones. You. BEST MODE FOR CARRYING OUT THE INVENTION
- circuit elements constituting each block are not particularly limited.
- one semiconductor substrate such as a single-crystal silicon may be formed by an integrated circuit technology such as a known CMOS (phase MOS transistor). Formed on top.
- CMOS phase MOS transistor
- FIG. 1 shows a memory system composed of an information processing device CHIP4 (MS) and a memory module band according to a first embodiment of the present invention. Each is described below.
- the memory module MM is composed of CHIP1 (FLASH), CHIP2 (CTL_L0GIC) and CHIP3 (DRAM).
- CHIP1 FLASH is a nonvolatile memory.
- ROM Read Only Memory
- EEPR0M Electrical Reliable and Programmable ROM
- Flash Memory etc. can be used for nonvolatile memory.
- a flash memory will be described as an example.
- a typical nonvolatile memory used as CHIP1 is a large-capacity flash memory equipped with a NAND interface (NAND IF) and has a large storage capacity of about 128 Mbits.
- the read time (the time from a read request to the output of data) is relatively slow, from about 25 ⁇ s to 100 s.
- CHIP3 is a dynamic random access memory and has various types such as EDO (Extended Data Out), SDRAM (Synchronous DRAM), and DDR (Double Data Rate) due to differences in internal configuration and interface. Any DRAM can be used to activate the memory module. In the present embodiment, an SDRAM will be described as an example.
- a typical SDRAM used as CHIP3 (DRAM) is about 256
- CHIP2 (CTL-LOGIC) is the data between CHIP1 (FLASH) and SRAM and CHIP3 (DRAM). This is a control circuit for controlling the transfer.
- SRAM is a static random access memory, and there are various types such as an asynchronous static random access memory and a clock synchronous static random access memory due to differences in the internal configuration interface.
- Any static random access memory can be used for the memory module ⁇ , but in the present embodiment, an asynchronous static random access memory will be described as an example.
- the storage capacity of the SRAM used in this embodiment is about 64 kbit, and the read time is about 80 ns.
- CHIP 1 FLASH
- CHIP2 CTL-LOGIC
- DRAM SDRAM interface
- the information processing device CHIP4 (MS) consists of a central processing unit CPU, SRAM controller SRC, and DRAM controller SDC.
- the SRAM controller accesses the SRAM using the SRAM interface (SRAMIF) and reads and writes data.
- the DRAM controller accesses CHIP 3 (DRAM) via CHIP2 (CTL_L0GIC) through the SDRAM interface (SDRAM IF) to read and write data.
- CHIPl FLASH is divided into an initial program area and a main data area, although not particularly limited.
- initial program area immediately after power-on, boot data for starting the information processing device CHIP4 (MS) and automatic transfer area designation data indicating the data area in the main data area to be transferred to SDRAM and refresh Control selection data is stored.
- MS information processing device
- automatic transfer area designation data indicating the data area in the main data area to be transferred to SDRAM and refresh Control selection data is stored.
- CHIP3 (DRAM) is not limited, but is divided into a work area and a copy area.
- the work area is used as work memory when executing a program, and the copy area is used as memory for copying data from FLASH. Used.
- the SRAM is not particularly limited, it is divided into a boot area and a buffer area.
- the boot area is for storing boot data for starting up the information processing device CHIP4 (MS)
- the buffer area is a CHIPl ( It is used as a buffer memory to transfer data between FLASH) and SRAM.
- CHIP2 CTL-LOGIC
- CTL-LOGIC can be accessed from the memory management circuit MU, command 'address generation circuit CMAD, access arbitration circuit ARB, initialization circuit INT, refresh control circuit REF, data buffer BUF, SRAM interface (SRAM IF). It consists of a control register SREG and a control register DREG accessible from the SDRAM interface, a flash control circuit FC0N, an error detection and correction circuit ECC, and an alternative processing circuit REP.
- CHIP3 (DRAM) is composed of four memory punctures (punctures 0 to 3), and there is no particular limitation.
- the copy area of CHIP3 (DRAM) is assigned to bank 0 and bank 1 by the memory management circuit. Assignment and work areas can be assigned to Bank 2 and Punk 3.
- the flash control circuit FC0N When power is supplied to the information processing devices CHIP4 (MS), CHIP3 (DRAM), CHIP2 (CTL_L0GIC) and CHIPl (FLASH), the flash control circuit FC0N reads the data in the initial program area of CHIPl (FLASH) and generates an error. Check for errors in the detection and correction circuit ECC. If there is no error, transfer it directly to SRAM. If there is an error, correct it and transfer it to SRAM. In this way, by automatically transferring the boot data from CHIP1 (FLASH) to SRAM immediately after the power is turned on, the information processing device CHIP4 (MS) can read out the boot data and quickly start itself.
- the initialization circuit INT performs the initialization sequence of CHIP3 (DRAM).
- the flash control circuit FC0N reads the automatic transfer area designation data from SRAM, reads the data of the main data area of CHIP 1 (FLASH) in the range indicated by this data in order, and the error detection and correction circuit ECC detects an error. Check if there is. If there is no error, the data is transferred directly to the data buffer BUF. If there is an error, the data is corrected and transferred to the data buffer BUF.
- Command address generation circuit CMAD reads data held in data buffer BUF. Transfer to CHIP3 (DRAM) in order.
- the refresh control circuit When data transfer is started, the refresh control circuit issues an auto-refresh command to CHIP3 (DRAM) via the command address generation circuit CMAD to hold the data of CHIP3 (DRAM).
- the access arbitration circuit writes a transfer completion flag indicating the completion of the data transfer to the control register DREG.
- the information processing device CHIP4 accesses the control register DREG through the SDRAM interface (SDRAM IF) and reads the transfer completion flag in the control register DREG to know that the data transfer immediately after power-on is completed. it can.
- the refresh control circuit REF switches from CHIP1 (FLASH) at power-on to CHIP3 (DRAM).
- CHIP3 DRAM
- an auto-refresh operation is performed on CHIP3 (DRAM).
- the refresh control selection data is read from the SRAM.
- Refresh control When the selected data is high, when an auto-refresh command or a self-refresh command is input from the information processing device CHIP4 (MS) to CHIP2 (CTL_L0GIC), the refresh control circuit REF stops the auto-refresh operation and starts the refresh operation. The data retention by this shifts to control from the information processing device CHIP4 (MS).
- the refresh control circuit When the refresh control selection data is low, after the data transfer is completed, the refresh control circuit performs a self-refresh operation on CHIP3 (DRAM) and retains the data of CHIP3 (RAM). In the self-refresh state, data can be held with lower power than normal auto-refresh operation.
- the self-refresh state by the refresh control circuit REF is released when the self-refresh release instruction is input from the information processing device CHIP4 (MS), and at the same time, the data retention by the refresh operation is maintained by the information processing device CHIP4 (MS). Move on to control from (MS).
- the information processing device CHIP4 (MS) reads this boot data, You can get yourself up and running quickly. Furthermore, while the information processing device CHIP4 (MS) powers up, the data of CHIP 1 (FLASH) is automatically transferred to CHIP3 (DRAM) while the information processing device CHIP4 (MS) starts up. The performance can be improved because the memory module image can be accessed immediately.
- CHIP1 FLASH
- CHIP3 CHIP3
- MS information processing device CHIP4
- CHIP4 accesses the control register DREG and loads the load instruction and store instruction command. This is done by writing a code.
- the data in the main data area of CHIP 1 (FLASH) can be transferred to the copy g area of CHIP3 (DRAM) by the load instruction, and the data in the copy area of CHIP3 (DRAM) can be transferred to the main data area of CHIP1 (FLASH) by the store instruction. Can be transferred to
- the information processing device CHIP4 When the information processing device CHIP4 (MS) writes the load instruction code, load start address, and transfer data size from the SDRAM interface (SDRAM IF) to the control register DREG, the data from the load start address in the CHIPl (FLASH) data The data is transferred to the copy area of SCHIP3 (DRAM) up to the transfer size.
- the flash control circuit FC0N sequentially performs a read operation on CHIP1 (FLASH). If there is no error in the data read from CHIP1 (FLASH), the data is transferred directly to the transfer data buffer BUF, and if there is an error, it is corrected by the error detection and correction circuit ECC and transferred to the transfer data buffer BUF I do.
- Command 'Address generation circuit CMAD transfers the data held in the data buffer BUF to CHIP3 (DRAM) in order.
- the command 'address generation circuit CMAD issues a read command and address from the SDRAM interface (SDRAM IF) to CHIP3 (DRAM) to read data.
- SDRAM IF SDRAM interface
- DRAM CHIP3
- Data read from CHIP3 is transferred to the data buffer BUF.
- the flash control circuit FC0N reads the data transferred to the data buffer BUF and writes the data to CHIP1 (FLASH).
- the alternative processing circuit REP checks whether the writing has succeeded, and terminates the processing if successful. When writing fails, writing is performed to a new alternative address prepared in advance in CHIPl (FLASH). When the replacement process is performed, it retains and manages the defective address and the address information indicating which T-dress was replaced for the defective address.
- the error detection and correction circuit ECC and the alternative processing circuit REP are provided in the control circuit CHIP2 (CTL-LOGIC) .Of course, they are provided in CHIP1 (FLASH) and the FLASH side performs error correction. Data is transferred to the CHIP3 (DRAM) side via the control circuit CHIP2 (CTL_L0GIC), and the data transferred from the CHIP3 (DRAM) side to the CHIPl (FLASH) side is replaced by the CHI PI (FLASH) side. It is good also as composition which performs and writes.
- CHIPl FLASH
- SRAM power-on operation sequence
- CHIP4 information processing device
- Load instruction can transfer CHIPl (FLASH) data to SRAM buffer area
- store instruction can transfer SMM buffer area data to CHIPl (FLASH).
- the flash control circuit FC0N sequentially performs a read operation on CHIP1 (FLASH). If there is no error in the data read from CHIP1 (FLASH), the data is directly transferred to the SRAM buffer area. If there is an error, the data is corrected by the error detection and correction circuit ECC and transferred to the SRAM buffer area.
- the information processing device CHIP4 uses the SRAM interface (SRAM IF) output to the control register SREG Store command code, store start address, and transfer data size
- SRAM IF SRAM interface
- the flash control circuit FC0N reads data from the buffer area of the SDRAM and writes data to CHIP1 (FLASH).
- the alternative processing circuit REP checks whether the writing is successful, and terminates the processing if the writing is successful. If the write fails, write to the new alternate address provided in advance in CHIPl (FLASH). When the replacement process is performed, the defective address and the address information on which address the replacement process was performed for the defective address are held and managed.
- boot data and automatic transfer area designation data can be written to the initial program area of the FLASH via the SRAM buffer area in the SRAM IF, and the boot method and data transfer area immediately after power-on can be changed. It can flexibly respond to the demands of mobile devices and can achieve high functionality.
- CHIP4 When accessing the copy area of the information processing device CHIP4 (MS) power SCHIP3 (DRAM).
- DRAM power SCHIP3
- CHIP2 (CTL-LOGIC) reads and writes data from the copy area of CHIP3 (DRAM) according to the input command and address.
- CHIP 1 Since the data of CHIP 1 (FLASH) is held in the copy area of CHIP 3 (DRAM), the data of CHIP 1 (FLASH) is accessed by accessing CHIP 3 (DRAM) and reading and writing data.
- the read and write time of the DRAM is equivalent to that of DRAM. Reading from and writing to the CHIP3 (DRAM) work area is performed in the same procedure as accessing the copy area.
- the information processing device CHIP4 When accessing the SIP SRAM, the information processing device CHIP4 (MS) inputs an address, a read command and a write command to the SRAM through the SDRAM interface. The SRAM then reads and writes data according to these instructions and addresses.
- the information processing device CHIP4 (MS) The program can be changed to CHIP1 (FLASH) via the area, and the contents of the program can be read and confirmed, so that it can flexibly respond to the requirements of mobile devices.
- CHIP4 information processing unit CHIP4
- CHIP4 does not need to be aware of these data transfers. It can access CHIP3 (DRAM) and can respond to higher performance and higher functionality of mobile devices.
- CHIPl FLASH
- CHIP3 CHIP3
- the data transfer between CHIPl (FLASH) and CHIP3 (DRAM) by the load instruction and store instruction can be executed in the background, and the necessary data can be transferred to CHIP3 (DRAM) in advance by the required time.
- transfer to CHIP1 (FLASH) which can be used for higher performance and higher functionality of mobile devices.
- the memory module according to the present invention follows the SRAM interface and the SDRAM interface method, and automatically transfers the boot data in the CHIPl (FLASH) to the SRAM immediately after the power is turned on. (MS) can quickly start itself with this boot data. Furthermore, while the information processing device CHIP4 (MS) is starting up, the data of CHIP 1 (FLASH) is automatically transferred to CHIP3 (DRAM), so that the information processing device CHIP4 (MS) starts up. At that point, the memory module MM can be accessed immediately, which can improve performance.
- DRAM Secure an area in CHIP3 (DRAM) where data in CHIP1 (FLASH) can be copied, and immediately after power-on or in advance from CHIP 1 (FLASH) to CHIP3 (DRAM) by a load instruction
- FLASH data can be read at the same speed as DRAM.
- the data can be written to the DRAM once and then written back to the FLASH with a store instruction if necessary, so the data writing speed is equivalent to that of the DRAM.
- the CHIP1 (FLASH) program can be changed via the SRAM buffer area, and the contents of the program can be read and confirmed, so that it can flexibly respond to the requirements of mobile devices.
- a large-capacity work area can be secured in addition to the area in which FLASH data can be copied, and this can be used to enhance the functionality of mobile phones.
- FIG. 2 shows an example of a memory map by the memory management circuit MU.
- the storage area of the non-volatile memory is S 128 Mbit + 4 Mbit (4 Mbit is an alternative area)
- the storage area of the DRAM is 256 Mbit
- the SRAM is 8 kbit
- a typical memory map will be described using a memory module in which each DREG is an lkbit as an example.
- the memory management circuit MU uses the control register DREG (lkb), the DRAM work area WK (128Mbit), and the DRAM copy. This shows a memory map in which addresses are converted to one area CP (128 Mbit) and FLASH (128 Mbit).
- SRAM is divided into a boot area SBoot and a buffer area SBUF.
- the copy area CP is an area in which FLASH data is transferred and held.
- the work area WK is an area used as work memory.
- the copy area CP of puncture 1 (BANK1) includes an initial automatic transfer area CIP.
- the FLASH main data area FM includes an initial automatic transfer area IP that is automatically transferred to DRAM when the power is turned on! /
- the main data area FM of FLASH stores programs and data.
- the reliability of FLASH deteriorates due to repeated rewriting, and the data written at the time of writing becomes different data at the time of reading, and data is rarely written at the time of rewriting.
- the replacement area FREP is provided to replace the defective initial program area Fboot or the data in the main data area FM with a new area.
- the size of the substitute area is not particularly limited,
- the data in the FLASH main data area FM and the alternate area FREP are transferred to the DRAM copy area CP by a load instruction from the SDRAM interface (SDRAM IF).
- SDRAM IF SDRAM interface
- the FLASH initial program area FBoot stores the automatic transfer area specification data indicating the range of the initial automatic transfer area IP for automatic transfer from FLASH to DRAM when the power is turned on.
- the error correction circuit ECC checks whether there is an error. If there is no error, it is directly transferred to the SRAM boot area SBoot. If there is an error, the corrected data is transferred to the SRAM boot area SBoot.
- SDRAM interface SDRAM IF
- the control circuit CHIP2 CTL-LOGIC
- ECC error correction circuit
- the FLASH data is checked for errors by the error correction circuit ECC, and if there is no error, it is transferred directly to the DRAM copy area CP. If there is an error, the error-corrected data is transferred to the DRAM copy area CP.
- control circuit CHIP2 (CTL_L0GIC) reads the data in the DRAM copy area and transfers one page of data to the FLASH main data area according to the memory map set by the memory management circuit MU.
- the alternate processing circuit REP checks whether the writing was successful and terminates the processing if successful. If the writing fails, "If the address is in the alternate area FREP of FLASH, select the address and write the data.
- DRAM puncture 0 (BANK0) Address
- FLASH data can be read at the same speed as DRAM.
- Data can be read from the other banks (bank 1, bank 2, and bank 3) in the same manner.
- Fig. 3-(a) and Fig. 3-(b) show the initial sequence at power-on of CHIP2 (CTL-LOGIC). First, Fig. 3 (a) will be described.
- the DRAM After the period T6 (IDLE), the DRAM is in an idle state, and access can be accepted from the SDRAM interface (SDRAMIF) of the information processing device CHIP4 (MS).
- SDRAMIF SDRAM interface
- CHIP2 stops the auto-refresh by the refresh control circuit REF thereafter, and the data retention by the refresh operation is not performed by the information processing device. Automatically shift to refresh control from CHIP4 (MS).
- the refresh control circuit REF sets the DRAM to the self-refresh state by the self-refresh command during the period T6.
- the data transferred to the DRAM during the period T5 (ALD) can be held at low power.
- the sequence shown in Fig. 3 (a) is used, and when it is Low, the sequence shown in Fig. 3 (b) is used.
- an input terminal PSQ dedicated to refresh control selection is provided, for example, when the input terminal PSQ is connected to the power supply terminal, the initial sequence shown in Fig. 3 _ (a) can be selected. If it is connected to, the initial sequence shown in Fig. 3- (b) may be selected.
- FIG. 4 is a flowchart showing an example of initialization performed on the general-purpose SDRAM during the period T3 (DINT) shown in FIG. '-In this DRAM initialization, perform all bank precharge (STEP1: ABP) for the DRAM, then perform auto-refresh (STEP2: AREF), and finally perform mode register set (STEP3: MRSET).
- the mode register set shows an example in which the burst length (BL) is set to 4 and the latency (CL) is set to 2.
- Figure 5 shows an extended mode register EMREG added to a conventional general-purpose SDRAM, which enables a change in the data retention area during self-refresh, a change in the maximum guaranteed temperature, and a change in the drive capacity of the output buffer.
- 7 is a flowchart illustrating an example of initialization performed during a period T3 (DINT).
- the path length (BL) is set to 4 and the CAS latency (CL) is set to 2
- FIG. 6 is a flowchart showing an example of data transfer from the FLSAH to the SMM performed during the period T3 (BLD) in FIG. 3 'after the power is turned on.
- the control circuit CHIP2 reads the data of the initial program area FBoot from FLASH (STEP1). Check whether there is an error in the read data (STEP2). If there is an error, correct the error (STEP3). If there is no error, transfer it directly to the SRAM boot area SBoot (STEP4).
- FIG. 7 is a flowchart showing an example of data transfer from the initial automatic transfer area IP of the FLSAH to the initial automatic transfer area CIP of the DRAM performed during the period T5 (ALD) in FIG. 3 after the power is turned on.
- the control circuit CHIP2 reads data from FLASH (STEP1). Check whether there is an error in the read data (STEP2). If there is an error, correct the error (STEP3). If there is no error, transfer it directly to the data buffer BUF (STEP4).
- FIG. 8 is a flowchart showing data transfer from F_LASH to DRAM executed by a load instruction.
- FIG. 9 is a flowchart showing data transfer from DRAM to FLASH executed by a store instruction.
- CHIP2 When a store command and an address are input from the information processing device CHIP4 (MS), CHIP2 internally performs a procedure for reading data from the DMM according to the store command (STEP1). Before starting the data read from DRAM by the store instruction, is the read, write, refresh, etc. instruction executed from the information processing device CHIP 4 (MS)? Check (STEP2). If these instructions have not been executed, the data read from the DRAM by the store instruction is started (STEP5).
- the execution of the store instruction is temporarily stopped (STEP3), and the current instruction being executed is checked for completion (STEP4). If not completed, the execution of the scan instruction is stopped (STEP3). If completed, data read from DRAM by store instruction is started, and data read from DRAM is written to data buffer BUF (STEP5).
- FIG. 10 is a flowchart showing data transfer from FLASH to SRAM executed by a load instruction (SLoad).
- FIG. 11 is a flowchart showing data transfer from SRAM to FLASH executed by a store instruction.
- FIG. 12 is a block diagram showing an example of a NAND interface (NAND IF) NAND flash memory used as the CHIP1 (FLASH) shown in FIG. 1 which configures the memory module II.
- NAND IF NAND interface
- CHIP1 FLASH
- I / O-C0NT status register STREG, address register ADREG, control register C0MREG, ready / busy circuit R / B, high voltage generation circuit VL_GEN, row address buffer ROW-BUF, row address decoder ROW-DEC, column It consists of a buffer COL—BUF, a column decoder COL-DEC, a data register DATA—REG, a sense amplifier SENSE-AMP, and a memory array.
- CHIP1 FLASH
- NAND flash memory that has been commonly used in the past.
- Figure 13 shows the data read operation from the NAND flash memory constituting CHIP1. Show the work.
- the chip enable signal F- / CE goes low and the command latch enable signal F-CLE goes high and the write enable signal F- / WE rises
- the address latch enable signal F-ALE becomes High
- the second, third and fourth write enable signals F- / WE rise and the page address is input from the input / output signals F-I00 to F-107. input.
- One page of data corresponding to the input page address is transferred from the memory array MA to the data register DATA-REG. While data is being transferred from the memory array MA to the data register DATA-REG, the flash memory is busy, and the ready / busy circuit R / B sets the ready / busy signal F-R / B to low. When the data transfer is completed, read enable, the data in the data register DATA-REG is read out in order of 8 bits in synchronization with the fall of the signal F- / RE, and the input / output signals F-I00 to F- Output from 107.
- FIG. 14 is a diagram showing an example of a configuration in which an AND flash memory equipped with an AND interface AND IF is used for CHIP1 (FLASH) of the present memory module.
- This memory system can be realized even when an AND type flash memory equipped with an AND interface (AND IF) is used.
- Figure 15 shows an example of a block diagram of an AND-type flash memory used for CHIP1 in this memory module.
- CHIP1 (FLASH) of AND type flash memory is composed of control signal buffer C-BUF, command controller C-CTL, multiplexer MUX, data input buffer DI_BUF, input data controller IDC, sector address buffer SA-BUF, X decoder X-DE (: memory array MA (AND TYPE), Y address counter Y-CTF, Y decoder Y-DE sense amplifier circuit Y-GATE / SENS AMP, data register Data Register, data output buffer DO-BUF
- the operation of CHIP1 is the same as that of an AND flash memory generally used in the past.
- the memory module of the present embodiment can be configured by this CHIP1 (FLASH).
- Figure 16 shows the data read operation from the AND FLASH memory that constitutes CHIP1.
- One page of data corresponding to the input sector address is transferred from the memory array MA to the data register Data Register. While data is being transferred from the memory array MA (AND TY PE) to the data register Data Register, FLASH is busy and F-R / B keeps the ready / busy signal low. When the data transfer is completed, the data in the data register DATA— REG is read out in order of 8 bits in synchronization with the rising edge of the serial clock signal F-SC, and the input / output signals F-I00 to F-10 Output from 7.
- the memory module according to the present invention follows the SRAM interface and the SDRAM interface method, and automatically transfers boot data in CHIP 1 (FLASH) to the SRAM immediately after power-on, thereby enabling the information processing apparatus CHIP4 (MS) can boot itself quickly with this boot data. Furthermore, when the information processing device CHIP4 (MS) starts up, the data of CHIP 1 (FLASH) is automatically transferred to CHIP3 (DRAM) while the information processing device CHIP4 (MS) is starting up. As a result, it is possible to access the memory module MM immediately, thereby improving the performance.
- CHIP 1 FLASH
- 'CHIP3 DRAM
- load instruction ⁇ store instruction can be executed in the background, so necessary data can be stored without being aware of access from outside the memory module. It can be transferred to CHIP3 (DRAM) or CHIP1 (FLASH) in advance by time, and it can respond to the high performance and high functionality of portable devices.
- the CHIPl (FLASH) program can be changed via the SRAM buffer area, and the contents of the program can be read and confirmed, so that it can flexibly respond to the requirements of mobile devices.
- a large-capacity work area can be secured in addition to the area in which FLASH data can be copied, and this can be used to enhance the functionality of mobile phones.
- FIG. 17 shows a second embodiment to which the present invention is applied.
- 1 shows an embodiment of a memory system including a memory module MM1 and an information processing device CHIP4 (MS). Each is described below.
- Memory module ⁇ 1 has CHIPl (FLASH), CHIP2 (CTL-L0GIC1) and CHIP3 (DRA
- CHIPl FLASH is a non-volatile memory, and is described as a large-capacity flash memory equipped with a NAND interface (NAND IF). CHIPl (FLASH) has a large storage capacity of about 128 Mbits, and the read time (the time from a read request to the output of data) is relatively slow, from about 25 s to 100 ⁇ s.
- CHIP3 (DRAM1) is a DRAM equipped with an interface for data transfer with CHIP 2 (CTL-L0GIC1) and an interface for data transfer with the information processing device CHIP4 (MS). .
- the memory module # 1 can use any interface. Can be used.
- a synchronous DRAM type interface is used.
- SDRAM IF SDRAM interface
- the interface for data transfer between CHIP3 (DRAM) and CHIP2 (CTL L0GIC1) is a flash memory interface.
- the interface of the flash memory includes the so-called AND interface (AND IF) and NAND interface ( NA DIF), and both can be used in the present embodiment.
- AND IF AND interface
- NA DIF NAND interface
- an interface for performing data transfer between CHIP3 (DRAM) and CHIP2 (CTL L0GIC1) is described as a NAND interface.
- CHIP3 (DRAM1) consists of memory banks (BO, Bl, B2, B3) that hold data, and a control circuit DCTL1 that controls the reading and writing of data to and from this memory punk.
- the control circuit DCTL 1 is composed of a command decoder CDEC, access arbitration circuit ARB, memory management circuit DMU, initialization circuit INT, refresh control circuit REF, data buffer BUF, control register DREG, mode register MR, extension mode register EMR, FLASH interface circuit Consists of FIF.
- the CHIPl FLASH
- the CHIP 3 DRAM1
- the work area is managed so as to be used as a work memory when executing the program, and the copy area is used as a memory for copying data from FLASH.
- Memory punctures B0 and B1 of CHIP3 (DRAM1) can be assigned as copy areas and B2 and B3 as work areas. .
- CHIP2 (CTL—L0GIC1) is composed of SRAM, control register SREG, flash control circuit FC0N, error detection and correction circuit E (X, alternative processing circuit REP, memory management circuit SMU), and CHIP1 (FLASH) and CHIP3 (DRAM1). Controls data transfer with the
- the SRAM is divided into a boot area and a buffer area, although there is no particular limitation, by the memory management circuit S ⁇ , and the boot area is used to store boot data for starting up the information processing device CHIP4 (MS).
- Buffer area is CHIP FLA It is managed so that it is used as a buffer memory for transferring data between the SH) and SRAM.
- the data transfer between CHIP1 (FLASH) and CHIP2 (CTL-L0GIC1) is performed on the NAND interface (NAND IF), and the data transfer between CHIP2 (CTL-LOGIC) and CHIP3 (DRAM) is performed on the SDRAM interface (DRAM). SDRAM IF).
- Data transfer with the information processing device C HIP4 (MS) is performed by the SRAM interface (SRAM IF).
- the information processing device CHIP4 (MS) consists of a central processing unit CPU, SRAM controller SRC, and DRAM controller SDC.
- the SRAM controller accesses S ⁇ AM of CHIP2 by SRAM interface (SRAM IF) to read and write data.
- the DRAM controller directly accesses CHIP3 (DRAM) through the SDRAM interface (SDRAM IF) to read and write data.
- the CHIP3 (DRAM1) is equipped with a plurality of interfaces of the SDRAM interface (S DRAM IF) and the NAND interface (NAND IF).
- CHIP 3 (DRAM1) are SDRAM interfaces (SDRAM IF) and can be directly connected without any intervening chips, so that data can be read at higher speed.
- CHIP3 DRAM
- CHIP2 CTL-L0GIC1
- NANQ IF NAND interface
- CHIP1 FLASH
- CHIP2 CTL-1 L0GIC1
- CHIP3 DRAM1
- the flash control circuit FC0N reads the data in the initial program area FBoot of CHIPl (FLASH), and checks whether there is an error in the error detection and correction circuit ECC. If there is no error, transfer the data directly to the boot area SBoot of the SRAM. If there is an error, correct it and transfer it to the boot area of the SRAM.
- the information processing device CHIP4 (MS) reads the boot data stored in the boot area of the SRAM and starts up itself.
- the initialization circuit INT sets a desired value to the mode register MR and the extension mode register EMR as an initialization sequence of CHIP3 (DRAM1).
- the flash control circuit FC0N informs the CHIP3 (DRAM1) via the FLASH interface circuit FIF that transfer to the SRAM boot area has been completed.
- CHIP3 (DRAM1) instructs the flash control circuit FC0N to transfer data from CHIP1 (FLASH) to CHIP3 (DRAM1) through the FLASH interface FIF.
- the flash control circuit FC0N reads the data in the main data area of CHIP 1 (FLASH) in order and checks whether there is an error in the error detection circuit ECC. 'If there is no error, transfer it directly to the data buffer BUF. If there is an error, correct it, and transfer it to the data buffer BUF through the FLASH interface circuit FIF.
- Command' Decoder CDEC is held in the data buffer BUF
- the transferred data is sequentially transferred to memory bank 0 (B0) assigned to the copy area.
- the refresh control circuit holds the data transferred to memory bank 0 (B0).
- '' Refresh operation '' From the information processing device CHIP4 (MS),
- an AND interface (AND) is connected to CHIP1 (FLASH) of this memory module # 1.
- CHIP3 DRAM1
- the memory bank B0, B1, B2, B3
- the CHIP1 ( FLASH1) Data can be read at high speed.
- CHIP3 (DRAM1) is equipped with an SDRAM interface (SDRAM IF) and NAND interface (NAND IF)
- SDRAM interface (SDRAM IF) can be directly connected to the information processing device CHIP4 (MS). Since data can be transferred between the information processing devices CHIP4 (MS) and CHIP3 (DRAM) without using a chip, data can be read at high speed.
- FIG. 18 shows a third embodiment to which the present invention is applied.
- 1 shows an embodiment of a memory system including a memory module No. 2 and an information processing device CHIP4 (MS). Each is described below.
- CHIP4 information processing device
- the memory module # 2 is composed of CHIP1 (FLASH2), CHIP2 (CTL-L0GIC2), and CHIP3 (DRAM2).
- CHIP1 FLASH2 is a non-volatile memory, and is not particularly limited, and is a large-capacity flash memory equipped with a NAND interface (NAND IF).
- CHIP1 (FLASH2) is composed of a nonvolatile memory array that holds data, a control circuit FCTL that controls reading and writing of data from the nonvolatile memory array, an error detection and correction circuit ECC, and an alternative processing circuit REP.
- the memory array MA has a NAND configuration and an AND configuration, and both configurations are used. be able to.
- CHIP3 is a DRAM equipped with an interface for performing data transfer with CHIP1 (FLASH2) and an interface for performing data transfer with information processing device CHIP4 (MS).
- SDRAM IF SDRAM interface
- the interface for transferring data between CHIP3 (DRAM2) and CHIP1 (FLASH2) is a flash memory interface.
- the flash memory interface includes an AND interface (AND IF) and a NAND interface (NA ND). IF): Both can be used in the present embodiment.
- AND IF AND interface
- NA ND NAND interface
- IF NAND interface
- CHIP3 (DRAM2) is composed of a memory bank (B0, B1, B2, B3) that holds data and a control circuit DCTL2 that controls reading and writing of data to and from this memory bank.
- the control circuit DCTL2 is a command decoder CDEC , access arbitration circuit ARB, memory management circuit DMU, initialization circuit INT, refresh control circuit REF, data buffer BUF, control register DREG, mode register MR, extended mode register EMR, flash Control circuit DFC ON.
- CHIP1 FLASH2
- CHIP3 DRAM2
- the work area is managed so that it is used as a work memory when executing the program, and the copy area is used as a memory for copying data from FLASH.
- Memory banks B0 and B1 of CHIP3 (DRAM2) can be assigned to the copy area and B2 and B3 can be assigned as the work area. Wear.
- CHIP2 (CTL_L0GIC2) is composed of SRAM, control register SREG, flash control circuit SFC0N, and memory management circuit SMU, and controls data transfer with CHIP1 (FLASH2).
- the SRAM is divided into a boot area and a buffer area by the memory management circuit SMU, although there is no particular limitation.
- the boot area is used to store boot data for starting up the information processing device CHIP4 (MS).
- the buffer area is managed so as to be used as a buffer memory for transferring data between CHIP1 (FLASH 2) and SRAM.
- CHIP1 FLASH2
- CHIP2 CHIP2
- NAND IF NAND interface
- MS SRAM interface
- the information processing device CHIP4 (MS) consists of a central processing unit CPU, SRAM controller SRC, and DRAM controller SDC.
- the SRAM controller SRC accesses the SRAM of CHIP 2 (CTL-L0GIC2) through the SRAM interface (SRAM IF) to read and write data.
- the DRAM controller SDC directly accesses CHIP3 (DRAM2) through the SDRAM interface (SDRAM IF) to read and write data.
- the CHIP1 (FLASH2) incorporates the error detection and correction circuit ECC and the alternative processing circuit REP, so that error detection and error correction at the time of data reading can be performed at high speed.
- address substitution processing at the time of data writing can be performed at high speed, so that data transfer can be speeded up.
- CHIP3 (DRAM2) is equipped with SDRAM interface (SDRAM IF) and NAND interface (NAND IF).
- SDRAM IF SDRAM interface
- NAND IF NAND interface
- the NAND interface can be directly connected to CHIP1 (FLASH2) via (NAND IF).
- IF can directly connect to the information processing device CHIP4 (MS), so that data can be read at higher speed.
- CHIP1 FLASH2
- CHIP2 CHIP2
- CTL L0GIC2 CHIP2
- CHIP3 CHIP3
- the flash control circuit SFC0N reads the data in the initial program area of CHIP1 (FLASH2) and transfers it to the boot area of the SRAM.
- CHIP1 FLASH2 performs data error detection and error correction at high speed by the built-in error detection and correction circuit ECC when reading data.
- the information processing device CHIP4 (MS) reads out the boot data stored in the boot area of the SRAM and starts itself.
- the initialization circuit INT sets a desired value to the mode register MR and the extended mode register EMR as an initialization sequence of CHIP3 (DRAM 2 ).
- the flash control circuit SC0N informs CHIP3 (DRAM2) via the transfer end signal TC that transfer to the SRAM boot area has been completed.
- the flash control circuit DFC0N of CHIP3 (DRAM2) reads the data of the main data area of CHIP1 (FLASH2) in order and transfers it to the data buffer BUF.
- the command decoder CDEC sequentially transfers the data held in the data buffer BUF to memory puncture 0 (B0) assigned to the copy area.
- the refresh control circuit performs a refresh operation to hold the data transferred to the memory puncture.
- the access arbitration circuit ARB issues a read instruction from the information processing device C HIP4 (MS). Always prioritize and stop any data transfer between CHIP1 (FLASH2) and CHIP3 (DRAM2) due to a load or store instruction. Then, the command 'decoder CDEC decodes this read command, reads data from memory bank 0 (B0), and outputs it through the SDRAM interface.
- this memory module can be realized when an AND interface (AND) is used for data transfer between CHIP1 (FLASH2) and CHIP3 (DRAM2) of this memory module MM2.
- AND AND interface
- CHIP3 (DRAM2) is equipped with SDRAM interface (SDRAM IF). And NAND interface (NAND IF).
- the NAND interface can be directly connected to C HIP1 (FLASH2) by (NAND IF). Since the SDRAM interface (SDRAM IF) can be directly connected to the information processing device CHIP4 (MS), data can be read at higher speed.
- FIG. 19 is a block diagram showing an example of a flash memory ′ used as the CHIP1 (FLASH2) shown in FIG. 18 and constituting the memory module MM2.
- Control signal buffer CSB Read / program / erase control circuit RPEC, sector address buffer SABUF, X-decoder X-DEC, multi-pretuce circuit MLP, Y key Dress counter YA (: Data input buffer DIBUF, input data control circuit IDC, data output buffer D0BUF, Y decoder Y-DE Y gate circuit Y-GT, data register DT REG, memory array MA.
- Figure 20 shows the operation of reading data from the flash memory of CHIP1 (FLASH2).
- the chip enable signal F- / CE goes low and the command latch enable signal F-CLE goes high and the write enable signal F- / WE rises
- the input / output signals F-10-1 to F-10 Input the instruction code Rcode of the read instruction from 8.
- the address latch enable signal F-ALE becomes High
- the address (CA1, CA2, SA1) is input from the input / output signals F-101 to F-108. , SA2).
- the start address is specified by CA1 and CA2, and the sector address is specified by SA1 and SA2.
- One sector of data corresponding to the input sector address is transferred from the memory array MA to the data register DTREG. While data is being transferred from the memory array MA to the data register DTREG, the flash memory is busy, and the ready / busy circuit R / B sets the ready / busy signal F-R / B to low. When the data transfer to the data register DTREG is completed, the data in the data register DTREG is read in 16-bit units starting from the input start address in synchronization with the read enable signal F- / RE. Output from 10 1 to F-1016.
- FIG. 21 shows a fourth embodiment to which the present invention is applied.
- 1 shows an embodiment of an information processing device including a memory module band 3 and an information processing device CHIP4 (MS). Each is described below.
- the memory module MM3 is composed of CHIP1 (FLASH3) and CHIP3 (DRAM3).
- CHIP1 (FLASH3) is a non-volatile memory, and is not particularly limited, and is a large-capacity flash memory equipped with a NAND interface (NAND IF).
- CHIP1 FLASH3 is a non-volatile memory array MA that holds data, a transfer control circuit FCTL3 that controls data transfer from the non-volatile memory array MA to SRAM, an error detection and correction circuit EC (:, alternative processing circuit REP, SRAM , Control register SREG, memory manager Management circuit It is composed of SMU.
- the SRAM is divided into a boot area and a buffer area, although there is no particular limitation, by the memory management circuit SMU.
- the boot area is used to store boot data for starting up the information processing device CHIP4 (MS).
- the buffer area is managed so as to be used as a buffer memory for transferring data between the nonvolatile memory array MA of the CHIP1 (FLASH3) and the SRAM. '
- the configuration of the memory array MA mainly includes a NAND configuration and an AND configuration, and either configuration can be used.
- CHIP3 is a DRAM equipped with an interface for data transfer with CHIP1 (FLASH3) and an interface for data transfer with the information processing device CHIP4 (MS).
- non-synchronous and quick-synchronous DRAM interfaces There are two types of interfaces for data transfer with the information processing device CHIP4 (MS): non-synchronous and quick-synchronous DRAM interfaces. Can be. In the present embodiment, an explanation will be given by taking an example of a SDRAM interface (SDRAM IF) of a synchronous DRAM which is a clock synchronous type DRAM interface and is typically used.
- SDRAM IF SDRAM interface
- the interface for data transfer between CHIP3 (DRAM3) and CHIP1 (FLASH3) is a flash memory interface.
- the flash memory interface includes AND interface (AND IF) 'and NAND interface ( NA ND IF), and both can be used in the present embodiment.
- AND IF AND interface
- NA ND IF NAND interface
- an interface for performing data transfer between CHIP3 (DRAM3) and CHIP1 (FLASH3) will be described as a NAND interface.
- the CHIPS (DRAM3) consists of a memory puncture (B0, Bl, B2, B3) that holds data, and a control circuit DCTL3 that controls reading and writing of data to and from this memory bank.
- the control circuit DCTL3 consists of the following commands: a decoder CDEC, an access arbitration circuit ARB, a memory management circuit DMU, an initialization circuit INT, a refresh control circuit REF, a data buffer BUF, a control register DREG, a mode register MR, and an extended mode register EMR. Flash control circuit DFC Consists of ON.
- CHIP1 FLASH3 is divided into an initial program area and a main data area, although there is no particular limitation.
- CHIP3 DRAM3
- the work area is managed so that it is used as a work memory when executing the program, and the copy area is used as a memory for copying data from CHIP1 (FLASH3). It is also possible to assign memory banks B0 and B1 of CHIP3 (DRAM3) as copy areas and B2 and B3 as work areas.
- the information processing device CHIP4 (MS) consists of a central processing unit CPU, SRAM controller SRC, and DRAM controller SDC.
- the SRAM controller accesses the SRAM of CHIP1 (FLASH3) by SRAM interface (SRAM IF) and reads and writes data.
- the DRAM controller directly accesses CHIP3 (DRAM3) through the SDRAM interface (SDRAM IF) to read and write data.
- the CHIP1 (FLASH3) incorporates the SRAM, the error detection and correction circuit ECC, and the alternative processing circuit REP, so that data transfer between the nonvolatile memory array and the SRAM can be performed at high speed.
- CHIP3 (DRAM3) is equipped with SDRAM interface (SDRAM IF) and NAND interface (NAND IF), and NAND interface can be directly connected to CHIP1 (FL'ASH2) by (NAND IF).
- SDRAM IF SDRAM interface
- NAND IF NAND interface
- the SDRAM IF can be connected directly to the information processing device CHIP4 (MS), so that data can be read at higher speed.
- CHIP1 FLASH3
- CHIP3 DRAM3
- the transfer control circuit FCTL3 reads the data in the initial program area of the nonvolatile memory array MA and transfers the data to the boot area of the SRAM.
- the built-in error detection and correction circuit ECC performs data error detection and error correction at high speed.
- the information processing device CHIP4 (MS) reads the boot data stored in the boot area of the SRAM and starts up itself.
- the initialization circuit INT sets a desired value to the mode register MR and the extension mode register EMR as an initialization sequence of CHIP3 (DRAM3).
- the built-in address substitution circuit REP checks at high speed whether or not the writing was successful. If the writing is successful, the writing is terminated, and if the writing fails, Select the address in the alternate area FREP of CHIP1 (FLASH3) and write the data.
- SDRAM 'IF SDRAM interface
- the access arbitration circuit ARB Always gives priority to the read instruction from the information processing device CHI P4 (MS), and data transfer occurs between CHIP1 (FLASH3) and CHIP3 (DRAM3) by a load instruction or a store instruction. If so, stop this. Then, the command 'decoder CDEC decodes this read command, reads data from memory puncture 0 (B0), and outputs it through the SDRAM interface.
- the present memory module can be realized even when the AND interface (AND IF) is used for data transfer between CHIP1 (FLASH3) and CHIP3 (DRAM3) of the memory module MM3.
- AND IF AND interface
- the CHIP1 (FLASH3) incorporates the SRAM, the error detection and correction circuit ECC, and the alternative processing circuit REP, so that data transfer between the nonvolatile memory array and the SRAM can be performed at high speed.
- CHIP3 (DRAM3) is equipped with SDRAM interface (SDRAM IF) and NAND interface (NAND IF), and NAND interface can be directly connected to CHIP1 (FLASH3) by (NAND IF).
- IF can directly connect to the information processing device CHIP4 (MS), so that data can be read at higher speed.
- FIG. 22 shows a fifth embodiment to which the present invention is applied.
- 1 shows an embodiment of an information processing device including a memory module MM3 and an information processing device CHIP4 (MS). Each is described below.
- Memory module customer 3 is composed of CHIP1 (FLASH4) and CHIP3 (DRAM4).
- CHIP1 (FLASH4) is a non-volatile memory and includes, but is not limited to, a NAND interface. Large-capacity flash memory with face (NAND IF);
- CHIP1 (FLASH4) consists of a nonvolatile memory array MA that holds data, a transfer control circuit FCTL4, an error detection and correction circuit ECC, and an alternative processing circuit REP.
- the configuration of the memory array MA mainly includes a NAND configuration and an AND configuration, and either configuration can be used.
- CHIP3 is a DRAM equipped with an interface for data transfer with CHIP1 (FLASH4) and an interface for data transfer with the information processing device CHIP4 (MS).
- asynchronous and quick-synchronous DRAM interfaces There are two types of interfaces for data transfer with the information processing device CHIP4 (MS): asynchronous and quick-synchronous DRAM interfaces.
- the memory module MM4 uses any interface. Can be used. In the present embodiment (in the embodiment, a DRAM interface of a synchronous type is used, and an SDRAM interface (SDRAM IF) of Synchronous DRAM which is typically used will be described as an example.
- SDRAM IF SDRAM interface
- the interface for data transfer between CHIP3 (DRAM4) and CHIP1 (FLASH4) is a flash memory interface.
- the flash memory interface includes AND interface (AND IF) and NAND interface (NA ND). IF), and both can be used in this embodiment.
- AND IF AND interface
- NA ND NAND interface
- IF NAND interface
- an interface for performing data transfer between CHIP3 (DRAM4) and CHIP1 (FLASH4) will be described as a NAND interface.
- CHIP3 (DRAM4) is composed of a memory bank (B0, B1, B2, B3) that holds data, and a control circuit DCTL4 that controls reading and writing of data to and from this memory bank.
- the control circuit DCTL4 includes a command-decoder CDEC, an access arbitration circuit ARB, a memory management circuit DMU, an initialization circuit INT, a refresh control circuit REF, a data buffer BUF, a control register D REG, a mode register MR, and an extended mode register EMR.
- Flash control circuit DFC0N composed of SRAM.
- the CHIP1 (FLASH4) is divided into an initial program area and a main data area by, but not limited to, the memory management circuit DMU, and the CHIP3 (DRAM4) Although there is no particular limitation, it is divided into a work area and a copy area, and the work area is managed so that it is used as work memory when executing the program, and the copy area is used as memory for copying data from FLASH. Have been. Memory banks B0 and B1 of CHI.P3 (DRAM4) can be assigned as copy areas and B2 and B3 as work areas.
- SRAM's are further divided into a boot area and a buffer area.
- the boot area is for storing boot data for starting up the information processing device CHIP4 (MS), and the buffer area is for CHIP1 (FLASH 4). It is managed so that it is used as a buffer memory for transferring data between the nonvolatile memory array MA and the SRAM.
- the information processing device CHIP4 (MS) consists of a central processing unit CPU, SRAM controller SRC, and DRAM controller SDC.
- the DRAM controller accesses the SRAM of CHIP3 (DRAM4) and the memory bank (B0, B1, B2, B3) through the SDRAM interface (SDRAM IF) to read and write data.
- the CHIP1 (FLASH4) incorporates the error detection and correction circuit ECC and the substitute processing circuit REP, error detection and error correction at the time of data reading can be performed at high speed.
- address substitution processing at the time of data writing can be performed at high speed, so that data transfer can be speeded up.
- CHIP3 (DRAM4) is equipped with SDRAM interface (SDRAM IF) and NAND interface (NAND IF), and NAND interface can be directly connected to CHIP1 (FL ASH4) via (NAND IF).
- IF can directly connect to the information processing device CHIP4 (MS), so that data can be read out at higher speed. Since the number of chips required to implement this memory system can be reduced, low power and low cost can be achieved.
- CHIP1 FLASH4
- CHIP3 DRAM4
- the flash control circuit DFC0N reads the data in the initial program area of the nonvolatile memory array MA and transfers the data to the boot area of the SRAM.
- the built-in error detection and correction circuit ECC When reading data from the nonvolatile memory array MA of CHIP1 (FLASH4), the built-in error detection and correction circuit ECC performs high-speed data error detection and linear correction.
- the information processing device CHIP4 reads out the boot data stored in the SRAM print area via the SDRAM interface (SDRAM IF) and starts up itself.
- the initialization circuit INT sets a desired value to the mode register MR and the extension mode register EMR as an initialization sequence of CHIP3 (DRAM4).
- the flash control circuit DFC0N of CHIP3 sequentially reads the data in the main data area of the nonvolatile memory array MA via the transfer control circuit FCTL4 and transfers the data to the data buffer BUF. Command.
- the decoder CDEC transfers the data held in the data buffer BUF to the memory bank 0 (B0) assigned to the copy area in order.
- the refresh control circuit REF performs a refresh operation to hold the data transferred to memory bank 0 (B0).
- the built-in address substitution processing circuit REP checks at a high speed whether or not the writing was successful. If the writing is successful, the writing is terminated, and if the writing fails, Select the address in the alternate area FREP of CHIP1 (FLASH4) and write the data.
- the access arbitration circuit ARB issues a read instruction from the information processing device CHI P4 (MS). If data transfer occurs between CHIP1 (FLASH4) and CHIP3 (DRAM4) by a load instruction or a store instruction, this is stopped. Then, the command decoder CDEC decodes this read command, reads data from memory bank 0 (B0), and outputs it through the SDRAM interface.
- this memory module can be realized even when the AND interface (AND IF) is used for data transfer between CHIP1 (FLASH4) and CHIP3 (DRAM4) of the memory module # 4. .
- the CHIP1 (FLSH4) incorporates the error detection and correction circuit ECC and the alternative processing circuit REP, error detection and error correction at the time of data reading can be performed at high speed.
- the address substitution process at the time of data writing can be performed at high speed, the speed of data transfer can be increased.
- CHIP3 (DRAM2) is equipped with SDRAM interface (SDRAM IF) and NAND interface (NAND IF), and NAND interface can be directly connected to CHIP1 (FL AS.H4) via (NAND IF).
- SDRAM IF can be directly connected to the information processing device CHIP4 (MS), so that data can be read at higher speed. Since the number of chips required to realize this memory system can be reduced, low power and low cost can be achieved.
- FIG. 23 shows an example of a memory map by the memory management circuit DMU in the present embodiment.
- the memory management circuit DMU in this embodiment ', but are not limited to, storage area of the nonvolatile memory 12 8 Mbit + 4Mbit (4Mbit alternative
- a typical memory map will be described using a memory module where each of REG and DREG is Ikbit as an example.
- the memory management circuit DMU controls the control register DREG (lkb), the DRAM work area WK (128Mbit), the DRAM copy area CP (128Mbit), the control register SREG, The memory map which converted the address of SRAM and FLASH into (128Mbit) is shown.
- SRAM is divided into a boot area SBoot and a buffer area SBUF.
- the banks 0 (BANK0) and 1 (BANK1) of the DRAM are mapped to the copy area CP, and the punctures 2 (BANK2) and 3 (BANK3) are mapped to the work area WK.
- the copy area CP is an area in which FLASH data is transferred and held.
- Work area WK is an area used as work memory.
- the copy area CP of the bank 1 (BANK1) includes an initial automatic transfer area CIP.
- the FLASH is divided into a main data area FM, an initial program area Fboot, and an alternative area FREP.
- the FLASH main data area FM includes an initial automatic transfer area IP that is automatically transferred to DRAM when the power is turned on.
- the main data area FM of FLASH stores programs and data.
- the reliability of FLASH is reduced by repeated rewriting, and the data written at the time of writing becomes different data at the time of reading, and data is rarely written at the time of rewriting.
- the replacement area FREP is provided to replace the defective initial program area Fboot_main data area FM data with a new area.
- the size of the substitute area is not particularly limited, It is good to decide so that the reliability guaranteed by FLASH can be secured.
- the data in the initial program area FBoot of FLASH is transferred to the boot area SBoot of SRAM.
- the information processing circuit CHIP4 (MS) reads the data in the boot area SBoot of the SRAM via the SDRAM interface (SDRAM IF) and starts up itself. ( Next, the initial automatic transfer area of the FLASH Transferred to CIP.
- the address in DRAM puncture 0 (BANK0) and the read instruction are input from the SDRAM interface
- the address in DRAM bank 0 (BANK0) can be selected and the data can be read.
- FLASH data can be read at the same speed as DRAM.
- Data can be read from other banks (Bank 1, Punk 2, and Bank 3) in the same manner.
- DRM bank ⁇ (BANK1)
- FLASH data can be written at the same speed as DRAM.
- Data can be written in the other banks (Bank 3, Punk 2, Bank 0) in the same way.
- SRAM When an address for selecting SRAM and a read command are input from the SDRAM interface, SRAM can be selected and data can be read.
- SRAM When an address for selecting SRAM and a write command are input from the SDRAM interface, SRAM can be selected and data can be written.
- SDRAM interface SDRAM IF
- FIG. 24 shows a sixth embodiment to which the present invention is applied.
- 1 shows an embodiment of a memory system including a memory module MM5 and an information processing device CHIP4 (MS). Each is described below.
- the memory module No. 5 is composed of CHIP1 (FLASH4), CHIP2 (DRAM4), and CHIP3 (DRAM4).
- CHIP1 (FLASH4) is a memory similar to the nonvolatile memory described in FIG. 22 and has a NAND interface (NAND IF).
- CHIP2 (DRAM4) and CHIP3 (DRAM4) are exactly the same DRAM, and are DRAMs with the master select signal MSL added to the DRAM described in Figure 22.
- DFC0N is a flash control circuit that controls data transfer with CHIP1 (FLASH4).
- This memory module # 5 is an embodiment in which two DRAM chips are used in order to increase the storage capacity of the DRAM.
- CHIP2 (DRAM4) and CHIP3 (DRAM4) and CHIP1 (FLASH4) is performed by NAND interface (NAND IF).
- CHIP2 (DMM4) and CHIP3 (DRAM Data transfer between 4) and the information processing device CHIP4 (MS) is performed by SDRAM interface (SDRAM MIF).
- the master selection signal MSL is a signal for selecting whether or not CHIP2 (DRAM4) and CHIP3 (DRAM4) independently access CHI PI (FLASH4).
- the master select signal MSL is connected to the power supply terminal VDD, and it becomes the master DRAM that accesses CHIP1 (FLASH4) mainly.
- CHIP3 (DRAM4) the master select signal MSL is connected to the ground terminal VSS (0 V), and the slave DRAM does not mainly access CHIP1 (FLASH4).
- the flash control circuit DFC0N In ClilP2 (DRAM4) that has become the master DRAM, the flash control circuit DFC0N generates a control signal for data transfer with CHIP1 (FLASH4).
- CHIP2 (DRAM4) that is the slave DRAM
- the flash control circuit DFC0N in CHIP2 (DRAM4) does not generate control signals or data for data transfer with CHIP1 (FLASH4), and flashes CHIP2 (DRAM4).
- Data transfer to T, CHI PI (FLASH4) is performed using the control signal generated by the control circuit DFC0N.
- the control signals to the flash memory will be in a race condition, and the data transfer between the flash memory and the DRAM will not be successful. It is difficult to increase the storage capacity.
- the master DRAM and the slave DRAM can be selected, and the storage capacity can be increased by using a plurality of DRAM chips. Can respond.
- FIG. 25 shows a seventh embodiment of the present invention.
- Fig. 25 (a) is a top view
- Figs. 2 and 5 (b) are cross-sectional views along the line AA shown in the top view.
- the multi-chip module has a board (for example, a printed circuit board made of a glass epoxy board) mounted on a device using a Border Lid array (BGA).
- BGA Border Lid array
- CHIPM1 and CHIPM2 are mounted on a PCB. I have.
- CHIPM1 is a non-volatile memory
- CHIPM2 is a DRAM.
- This multi-chip module enables the memory shown in Fig. 21
- the module MM3 and the memory module MM4 shown in Fig. 22 can be integrated in one sealing body.
- CHIPM1 and the bonding pad on the base PCB are connected by a bonding wire (PATH2), and CHIPM2 and the bonding pad on the base PCB are connected by a bonding wire (PATH1).
- CHIPM1 and CHIPM2 are connected by a bonding wire (PATH3).
- the upper surface of the substrate PCB on which the chips are mounted is resin-molded to protect each chip and connection wiring.
- metal, ceramic, or resin power (COVER) may be further used. '—
- a memory module having a small mounting area can be configured. Also, since each chip can be stacked, the wiring length between the chip and the base PCB can be shortened, and the mounting area can be reduced. By unifying the wiring between chips and the wiring between each chip and the board by the bonding wire method, it is possible to manufacture a memory module with a small number of steps.
- the number of bonding pads on the substrate and the number of bonding wires can be reduced, and the memory module can be manufactured with a small number of processes. If a resin cover is used, a more robust memory module can be configured. When a ceramic-to-metal power par is used, a memory module with excellent heat dissipation and shielding effect in addition to strength can be constructed.
- FIG. 26 shows an eighth embodiment of the present invention.
- FIG. 26 (a) is a top view
- FIG. 26 (b) is a cross-sectional view of a portion taken along line AA ′ shown in the top view.
- the multi-chip module has a board (for example, a printed circuit board made of a glass epoxy board) mounted on a device by a pole grid array (BGA).
- BGA pole grid array
- CHIPM1, CHIPM2, and C3 ⁇ 4IPM3 are mounted on a PCB.
- CHIPM1 is non-volatile memory
- CHIP2M is DRAM
- CHIP3M is a central processing unit CPU and SRAM controller SRC And an information processing device composed of a DRAM controller and SDC, or a control circuit that controls data transfer between CHIP1M and CHIP2M.
- This multi-chip module can be used as the memory module MM shown in FIG. 1, the memory module MM shown in FIG. 14, the memory module MM1 shown in FIG. 17, the memory module MM2 shown in FIG. 18, the memory system shown in FIG. In Fig. 22, the memory system can be integrated into one encapsulant.
- CHIPMl and the bonding pad on the base PCB are connected by a bonding wire (PATH2), and CHIPM2 and the bonding pad on the base PCB are connected by a bonding wire (PATH1).
- CHIPMl and CHIPM2 are connected by a bonding wire (PATH3).
- a ball grid array is used for mounting and wiring of CHIPM3.
- the mounting method three chips can be stacked, so that the mounting area can be kept small. Furthermore, bonding between the CHIPM3 and the board is not required, and the number of bonding wires can be reduced, so that the number of assembly steps can be reduced and a more reliable multi-chip module can be realized.
- FIG. 27 shows a ninth embodiment of the multi-chip module according to the present invention.
- FIG. 27 (a) is a top view
- FIG. 27 (b) is a cross-sectional view of a portion taken along line AA ′ shown in the top view.
- CHIPMl, CHIPM2, CHIPM3, and CHIPM4 are mounted on a substrate (for example, a printed circuit board made of a glass epoxy substrate) mounted on a device by a pole grid array (BGA).
- CHIPMl is nonvolatile memory
- CHIPM3 is DRAM.
- CHIPM2 is a control circuit that controls the data transfer between CHIPMl and CHIPM2, and CHIPM4 is an information processing device composed of a central processing unit CPU, an SRAM controller SRC, and a DRAM controller SDC.
- the memory system shown in Fig. 1, the memory system module shown in Fig. 14, the memory system shown in Fig. 17 and the memory system shown in Fig. 18 can be integrated in one sealing body.
- CHIPMl and bonding pad on PCB are connected with bonding wire (PATH2)
- CHIPM2 and the bonding pad on the base PCB are connected by a bonding wire (PATH4)
- CHIPM3 and the bonding pad on the base PCB are connected by a bonding wire (PATH1).
- CHIPM1 and CHIPM3 are connected by a bonding wire (PATH3), and CHIPM2 and CHIPM3 are connected by a bonding wire (# 5).
- a pole grid array (BGA) is used for mounting and wiring the CHIPM4.
- BGA pole grid array
- bare chips are directly mounted on the printed circuit board PCB, so a memory module with a small mounting area can be configured.
- the wiring length between chips can be shortened.
- the number of bonding pads on the substrate and the number of bonding wires can be reduced, and the memory module can be manufactured with a small number of steps.
- bonding between the CHIPM4 and the board is not required, and the number of bonding wirings can be reduced, so that the number of assembly steps can be reduced and a more reliable multi-chip module can be realized.
- FIG. 28 shows a tenth embodiment of the memory system according to the present invention.
- FIG. 28 (a) is a top view
- FIG. 28 (b) is a cross-sectional view of a portion taken along line AA ′ shown in the top view.
- CHIPM1, CHIPM2, and CHIPM3 are mounted on a substrate (for example, a printed circuit board made of a glass epoxy substrate) mounted on a device by a pole grid array (BGA).
- CHIPM1 is a nonvolatile memory
- CHIPM2 and CHIPM3 are DRAMs.
- CHIPM1 and bonding pad on board PCB are connected by bonding wire (PATH2), and CHIPM2 and bonding pad on board PCB are bonding wire (PATH1). CHIPM3 and the bonding pad on the PCB are connected by bonding wires (PATH 3).
- a memory module with a small mounting area can be configured.
- the chips can be arranged close to each other, the wiring length between chips can be shortened.
- the memory module can be manufactured in a small number of steps by connecting the wiring between each chip and the board in a bonding wire manner.
- FIG. 29 shows an eleventh embodiment of the memory system according to the present invention.
- FIG. 29 (a) is a top view
- FIG. 29 (b) is a cross-sectional view of a portion along the line AA shown in the top view.
- the memory module according to the present embodiment has a board (for example, a printed circuit board made of a glass epoxy substrate) mounted on a device by a Paul Dalida array (BGA).
- CHIPM1 is non-volatile memory
- CHIPM2 and CHIPM3 are DRAM
- CHIPM4 is an information processing device that consists of a central processing unit CPU, SRAM controller SRC, and DRAM controller SDC.
- the memory system shown in Fig. 24 can be integrated into one encapsulant.
- CHIPM1 and the bonding pad on the base PCB are connected by a bonding wire (PATH2).
- CHIPM2 and the bonding pad on the base PCB are connected by a bonding wire (PATH1). 3) Connected.
- a ball grid array (BGA) is used for mounting and wiring of CHIPM4.
- BGA ball grid array
- the bare chip is directly mounted on the printed circuit board PCB, a memory module having a small mounting area can be configured. Further, since the chips can be arranged close to each other, the wiring length between chips can be shortened. Bonding between the CHIPM4 and the board is unnecessary, reducing the number of bonding wires. The number of assembly steps can be reduced, and a more reliable multi-chip module can be realized.
- FIG. 30 shows a twelfth embodiment of a mobile phone using the memory module according to the present invention.
- antenna ANT radio block RF, base band, block BB, audio codec block SP, speaker SK, microphone MK :, processor CPU, liquid crystal display LCD, keyboard KEY and memory module MEM of the present invention Be composed.
- the sound received through the antenna ANT is amplified by the radio block RF and input to the baseband block BB.
- the base band block BB converts the analog signal of sound to a digital signal, performs error correction and decoding processing, and outputs it to the audio codec block SP.
- the audio codec converts the digital signal to an analog signal and outputs it to the speaker SK, the other party's voice can be heard from the speaker.
- This section describes how to access a website on the Internet from a mobile phone, download music data, play back and listen, and save the downloaded music data at the end.
- Memory module MEM contains basic programs and application programs
- Web browser programs stored in FLASH are stored in the same memory module.
- the processor CPU executes the Web browser program in the DRAM and the Web browser is displayed on the LCD.
- the music data is received through the antenna ANT, amplified by the radio block RF, and input to the base band block BB.
- the base band block BB converts music data, which is an analog signal, into a digital signal, and performs error correction and decoding. 'In the end, digitalized music data or memory The data is stored in the DRAM of the MEM, stored, and transferred to the FLASH.
- the music playback program stored in the FLASH in the memory module MEM is transferred to the DRAM in the same memory module.
- the processor CPU executes the audio playback program in the DRAM, and the music playback program is displayed on the LCD LCD.
- the processor CPU executes a music reproduction program, processes the music data stored in the DRAM, and finally from the speaker SK. I hear music.
- the memory module of the present invention uses a large-capacity DRAM, the Web browser and the music playback program are held in the DRAM, and both programs are simultaneously executed by the CPU. In addition, you can start an e-mail program, and send and receive e-mail programs at the same time. ,
- the memory module When a power-off instruction is input from the keyboard, the memory module operates only the SRAM, performs minimum data retention, and can reduce power consumption extremely. As described above, by using the memory module according to the present invention, a large amount of mail, music reproduction, application programs, music data, still image data, moving image data, and the like can be stored, and a plurality of programs can be simultaneously executed. it can.
- FIG. 31 shows a thirteenth embodiment of a mobile phone using the memory system according to the present invention.
- antenna ANT for mobile phones, antenna ANT, wireless block RF, baseband block BB, audio codec block SP, speaker SK, microphone MK, processor CPU, LCD display LCD, keyboard KEY, and processor CPU and memory module
- the memory system SL of the present invention in which the MEM is integrated into one sealing body.
- the number of parts can be reduced, so that the cost can be reduced and the reliability of the mobile phone is improved.
- the product mounting area can be reduced, and the size of mobile phones can be reduced. Industrial applicability
- the memory module can be accessed immediately when the portable device starts up, so that the performance of the portable device can be improved.
- an area in which part of the FLASH data or all data can be copied is secured in the DRAM, and data is transferred from the FLASH to the DRAM in advance. This makes it possible to read and write FLASH data at the same speed as DRAM.
- this memory module when reading from FALSH, error detection and correction are performed, and at the time of writing, replacement processing is performed for a defective address that was not correctly written. Processing can be performed at high speed and reliability can be maintained.
- this memory module since this memory module uses a large-capacity DRAM, it can secure a large-capacity work area in addition to the area where FLASH data can be copied, and can respond to the high functionality of mobile phones.
- auto-refresh is performed inside the memory module by starting the transfer of the initial program from the FLASH to the DRAM after the power is turned on until the auto-refresh command is input from outside the memory module. Cut The replacement can be performed quickly and accurately.
- the DRAM is placed in the self-refresh state, so that the low power consumption is maintained until an instruction to cancel the self-refresh state is input from outside the memory module. Can hold DRAM data.
- boot data and automatic transfer area designation data can be written to the initial program area of FLASH through the SRAM interface, which is a general interface, and the boot method immediately after power-on can be changed because the data transfer area can be changed.
- SRAM interface which is a general interface
- boot method immediately after power-on can be changed because the data transfer area can be changed.
- it can flexibly respond to the demands of portable equipment and can achieve high functionality.
- a system memory module with a small mounting area can be provided by mounting a plurality of semiconductor chips in one sealing body.
Abstract
Description
Claims
Priority Applications (6)
Application Number | Priority Date | Filing Date | Title |
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CN2003801045071A CN1717662B (zh) | 2002-11-28 | 2003-11-27 | 存储器模块、存储器系统和信息仪器 |
JP2004555062A JP5138869B2 (ja) | 2002-11-28 | 2003-11-27 | メモリモジュール及びメモリシステム |
US10/536,460 US7613880B2 (en) | 2002-11-28 | 2003-11-27 | Memory module, memory system, and information device |
US12/579,223 US7991954B2 (en) | 2002-11-28 | 2009-10-14 | Memory module, memory system, and information device |
US13/169,912 US8185690B2 (en) | 2002-11-28 | 2011-06-27 | Memory module, memory system, and information device |
US13/460,451 US20120271987A1 (en) | 2002-11-28 | 2012-04-30 | Memory Module, Memory System, and Inforamtion Device |
Applications Claiming Priority (2)
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JP2002-344815 | 2002-11-28 | ||
JP2002344815 | 2002-11-28 |
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US10536460 A-371-Of-International | 2003-11-27 | ||
US12/579,223 Continuation US7991954B2 (en) | 2002-11-28 | 2009-10-14 | Memory module, memory system, and information device |
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WO2004049168A1 true WO2004049168A1 (ja) | 2004-06-10 |
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PCT/JP2003/015165 WO2004049168A1 (ja) | 2002-11-28 | 2003-11-27 | メモリモジュール、メモリシステム、及び情報機器 |
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US (4) | US7613880B2 (ja) |
JP (2) | JP5138869B2 (ja) |
KR (1) | KR100786603B1 (ja) |
CN (1) | CN1717662B (ja) |
WO (1) | WO2004049168A1 (ja) |
Cited By (14)
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EP1632858A2 (en) | 2004-08-26 | 2006-03-08 | Sony Corporation | Semiconductor memory device and access method and memory control system for same |
EP1804156A2 (en) * | 2005-12-28 | 2007-07-04 | Silicon Storage Technology, Inc. | Unified memory and controller |
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JP2011258236A (ja) * | 2005-02-11 | 2011-12-22 | Sandisk Il Ltd | Nandフラッシュメモリ・システム・アーキテクチャ |
JP2008530683A (ja) * | 2005-02-11 | 2008-08-07 | サンディスク アイエル リミテッド | Nandフラッシュメモリ・システム・アーキテクチャ |
JP2009510560A (ja) * | 2005-09-26 | 2009-03-12 | サンディスク アイエル リミテッド | Nandインタフェースをエクスポートするnand型フラッシュメモリコントローラ |
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JP2009540431A (ja) * | 2006-06-07 | 2009-11-19 | マイクロソフト コーポレーション | 1つのインターフェースを有するハイブリッド・メモリ・デバイス |
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US9158475B2 (en) | 2009-05-22 | 2015-10-13 | Samsung Electronics Co., Ltd. | Memory apparatus and method therefor |
JP2011065386A (ja) * | 2009-09-16 | 2011-03-31 | Canon Inc | メモリコントローラ及びそのデータ退避制御方法 |
US8990441B2 (en) | 2013-03-14 | 2015-03-24 | Microsoft Technology Licensing, Llc | Assigning priorities to data for hybrid drives |
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US9946495B2 (en) | 2013-04-25 | 2018-04-17 | Microsoft Technology Licensing, Llc | Dirty data management for hybrid drives |
Also Published As
Publication number | Publication date |
---|---|
US20120271987A1 (en) | 2012-10-25 |
US7613880B2 (en) | 2009-11-03 |
US20110258373A1 (en) | 2011-10-20 |
KR20060055436A (ko) | 2006-05-23 |
JP5138869B2 (ja) | 2013-02-06 |
JP2011146075A (ja) | 2011-07-28 |
CN1717662B (zh) | 2010-04-28 |
JP5272038B2 (ja) | 2013-08-28 |
KR100786603B1 (ko) | 2007-12-21 |
US20100030952A1 (en) | 2010-02-04 |
CN1717662A (zh) | 2006-01-04 |
US7991954B2 (en) | 2011-08-02 |
US20060041711A1 (en) | 2006-02-23 |
US8185690B2 (en) | 2012-05-22 |
JPWO2004049168A1 (ja) | 2006-03-30 |
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