WO2004053596A3 - Verfahren zur einstellung einer optischen eigenschaft eines projektionsobjekts - Google Patents

Verfahren zur einstellung einer optischen eigenschaft eines projektionsobjekts Download PDF

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Publication number
WO2004053596A3
WO2004053596A3 PCT/EP2003/001564 EP0301564W WO2004053596A3 WO 2004053596 A3 WO2004053596 A3 WO 2004053596A3 EP 0301564 W EP0301564 W EP 0301564W WO 2004053596 A3 WO2004053596 A3 WO 2004053596A3
Authority
WO
WIPO (PCT)
Prior art keywords
projection lens
imaging property
exposure system
projection exposure
adjusting
Prior art date
Application number
PCT/EP2003/001564
Other languages
English (en)
French (fr)
Other versions
WO2004053596A2 (de
Inventor
Paul Graeupner
Original Assignee
Zeiss Carl Smt Ag
Paul Graeupner
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Zeiss Carl Smt Ag, Paul Graeupner filed Critical Zeiss Carl Smt Ag
Priority to AU2003221481A priority Critical patent/AU2003221481A1/en
Priority to JP2004557843A priority patent/JP2006509357A/ja
Priority to DE50308894T priority patent/DE50308894D1/de
Priority to EP03717185A priority patent/EP1570315B1/de
Publication of WO2004053596A2 publication Critical patent/WO2004053596A2/de
Publication of WO2004053596A3 publication Critical patent/WO2004053596A3/de
Priority to US11/149,568 priority patent/US7227616B2/en
Priority to US11/739,192 priority patent/US20070195299A1/en
Priority to US12/203,738 priority patent/US8237915B2/en
Priority to US13/564,857 priority patent/US20130114056A1/en

Links

Classifications

    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70341—Details of immersion lithography aspects, e.g. exposure media or control of immersion liquid supply
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70216—Mask projection systems
    • G03F7/70258—Projection system adjustments, e.g. adjustments during exposure or alignment during assembly of projection system
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
    • G03F7/70591—Testing optical components
    • G03F7/706—Aberration measurement
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/70—Microphotolithographic exposure; Apparatus therefor
    • G03F7/708—Construction of apparatus, e.g. environment aspects, hygiene aspects or materials
    • G03F7/70858—Environment aspects, e.g. pressure of beam-path gas, temperature
    • G03F7/70883—Environment aspects, e.g. pressure of beam-path gas, temperature of optical system
    • G03F7/70891—Temperature

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Health & Medical Sciences (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Atmospheric Sciences (AREA)
  • Toxicology (AREA)
  • Engineering & Computer Science (AREA)
  • Environmental & Geological Engineering (AREA)
  • Epidemiology (AREA)
  • Public Health (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)

Abstract

Die Erfindung betrifft ein Verfahren zur Verbesserung einer optischen Abbildungseigenschaft eines Projektionsobjektivs (20), das Teil einer mikrolithografischen Projektionsbelichtungsanlage (10) ist, mit der sich ein in einer Objektebene (22) des Projektionsobjektivs (20) angeordnetes Retikel (24) durch das Projektionsobjektiv (20) hindurch auf eine in einer Bildebene (28) angeordnete lichtempfindliche Oberfläche (26) abbilden lässt. Zunächst wird eine Immersionsflüssigkeit (38) in einen Zwischenraum (40) zwischen der lichtempfindlichen Oberfläche (26) und einer dieser Oberfläche (26) zugewandten Endfläche (42) des Projektionsobjektivs (20) eingebracht. Anschließend wird eine Abbildungseigenschaft des Projektionsobjektivs (20) ermittelt. Daran schließt sich ein Vergleich der ermittelten Abbildungseigenschaft mit einer Soll-Abbildungseigenschaft an. Schließlich wird die Temperatur der Immersionsflüssigkeit (38) so lange verändert, bis die ermittelte Abbildungseigenschaft der Soll-Abbildungseigenschaft möglichst nahe kommt. Die Abbildungseingenschaften des Projektionsobjektivs (20) lassen sich durch die temperaturinduzierte Veränderung des Brechungsindexes der Immersionsflüssigkeit (38) präzise beeinflussen, was z. B. zur Kompensation einer sphärischen Aberration des Projektionsobjektivs (20) benutzt werden kann.
PCT/EP2003/001564 2002-12-10 2003-02-17 Verfahren zur einstellung einer optischen eigenschaft eines projektionsobjekts WO2004053596A2 (de)

Priority Applications (8)

Application Number Priority Date Filing Date Title
AU2003221481A AU2003221481A1 (en) 2002-12-10 2003-02-17 Method for adjusting a desired optical property of a positioning lens and microlithographic projection exposure system
JP2004557843A JP2006509357A (ja) 2002-12-10 2003-02-17 投影対物レンズの意図された光学特性を設定する方法およびマイクロリソグラフィ投影露光装置
DE50308894T DE50308894D1 (de) 2002-12-10 2003-02-17 Verfahren zur einstellung einer gewünschten optischen eigenschaft eines projektionsobjektivs sowie mikrolithografische projektionsbelichtungsanlage
EP03717185A EP1570315B1 (de) 2002-12-10 2003-02-17 Verfahren zur einstellung einer gewünschten optischen eigenschaft eines projektionsobjektivs sowie mikrolithografische projektionsbelichtungsanlage
US11/149,568 US7227616B2 (en) 2002-12-10 2005-06-10 Method for improving an optical imaging property of a projection objective of a microlithographic projection exposure apparatus
US11/739,192 US20070195299A1 (en) 2002-12-10 2007-04-24 Method for improving an Optical Imaging Property of a Projection Objective of a Microlithographic Projection Exposure Apparatus
US12/203,738 US8237915B2 (en) 2002-12-10 2008-09-03 Method for improving an optical imaging property of a projection objective of a microlithographic projection exposure apparatus
US13/564,857 US20130114056A1 (en) 2002-12-10 2012-08-02 Method for improving an optical imaging property of a projection objective of a microlithographic projection exposure apparatus

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
DE10257766A DE10257766A1 (de) 2002-12-10 2002-12-10 Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
DE10257766.8 2002-12-10

Related Child Applications (2)

Application Number Title Priority Date Filing Date
US11/149,568 Continuation US7227616B2 (en) 2002-12-10 2005-06-10 Method for improving an optical imaging property of a projection objective of a microlithographic projection exposure apparatus
US11/149,568 Continuation-In-Part US7227616B2 (en) 2002-12-10 2005-06-10 Method for improving an optical imaging property of a projection objective of a microlithographic projection exposure apparatus

Publications (2)

Publication Number Publication Date
WO2004053596A2 WO2004053596A2 (de) 2004-06-24
WO2004053596A3 true WO2004053596A3 (de) 2004-12-02

Family

ID=32477537

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/EP2003/001564 WO2004053596A2 (de) 2002-12-10 2003-02-17 Verfahren zur einstellung einer optischen eigenschaft eines projektionsobjekts

Country Status (6)

Country Link
US (4) US7227616B2 (de)
EP (1) EP1570315B1 (de)
JP (1) JP2006509357A (de)
AU (1) AU2003221481A1 (de)
DE (2) DE10257766A1 (de)
WO (1) WO2004053596A2 (de)

Cited By (10)

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US8836929B2 (en) 2002-12-20 2014-09-16 Carl Zeiss Smt Gmbh Device and method for the optical measurement of an optical system by using an immersion fluid
US8902401B2 (en) 2006-05-09 2014-12-02 Carl Zeiss Smt Gmbh Optical imaging device with thermal attenuation
US8947629B2 (en) 2007-05-04 2015-02-03 Asml Netherlands B.V. Cleaning device, a lithographic apparatus and a lithographic apparatus cleaning method
US9116443B2 (en) 2004-12-20 2015-08-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9152058B2 (en) 2003-06-09 2015-10-06 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method involving a member and a fluid opening
US9256136B2 (en) 2010-04-22 2016-02-09 Asml Netherlands B.V. Fluid handling structure, lithographic apparatus and device manufacturing method involving gas supply
US9366972B2 (en) 2002-11-12 2016-06-14 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9436095B2 (en) 2004-01-20 2016-09-06 Carl Zeiss Smt Gmbh Exposure apparatus and measuring device for a projection lens
US9477153B2 (en) 2005-05-03 2016-10-25 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
US9482966B2 (en) 2002-11-12 2016-11-01 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method

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DE10257766A1 (de) 2002-12-10 2004-07-15 Carl Zeiss Smt Ag Verfahren zur Einstellung einer gewünschten optischen Eigenschaft eines Projektionsobjektivs sowie mikrolithografische Projektionsbelichtungsanlage
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