WO2004053961A1 - Manufacturing process for a multilayer structure - Google Patents
Manufacturing process for a multilayer structure Download PDFInfo
- Publication number
- WO2004053961A1 WO2004053961A1 PCT/IB2003/006397 IB0306397W WO2004053961A1 WO 2004053961 A1 WO2004053961 A1 WO 2004053961A1 IB 0306397 W IB0306397 W IB 0306397W WO 2004053961 A1 WO2004053961 A1 WO 2004053961A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- layer
- level
- sige
- support substrate
- implantation
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/20—Deposition of semiconductor materials on a substrate, e.g. epitaxial growth solid phase epitaxy
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76259—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along a porous layer
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/76—Making of isolation regions between components
- H01L21/762—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
- H01L21/7624—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
- H01L21/76251—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
- H01L21/76254—Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques with separation/delamination along an ion implanted layer, e.g. Smart-cut, Unibond
Definitions
- the target substrate 20 can be made of silicon.
Abstract
Description
Claims
Priority Applications (4)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP03789590A EP1568073A1 (en) | 2002-12-06 | 2003-12-05 | Manufacturing process for a multilayer structure |
JP2004558309A JP4762547B2 (en) | 2002-12-06 | 2003-12-05 | Manufacturing method of multilayer structure |
AU2003294170A AU2003294170A1 (en) | 2002-12-06 | 2003-12-05 | Manufacturing process for a multilayer structure |
US11/106,135 US7510949B2 (en) | 2002-07-09 | 2005-04-13 | Methods for producing a multilayer semiconductor structure |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
FR02/15499 | 2002-12-06 | ||
FR0215499A FR2848334A1 (en) | 2002-12-06 | 2002-12-06 | Multi-layer structure production of semiconductor materials with different mesh parameters comprises epitaxy of thin film on support substrate and adhesion on target substrate |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US10/615,259 Continuation-In-Part US6953736B2 (en) | 2002-07-09 | 2003-07-09 | Process for transferring a layer of strained semiconductor material |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US11/106,135 Continuation US7510949B2 (en) | 2002-07-09 | 2005-04-13 | Methods for producing a multilayer semiconductor structure |
Publications (1)
Publication Number | Publication Date |
---|---|
WO2004053961A1 true WO2004053961A1 (en) | 2004-06-24 |
Family
ID=32320086
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/IB2003/006397 WO2004053961A1 (en) | 2002-07-09 | 2003-12-05 | Manufacturing process for a multilayer structure |
Country Status (8)
Country | Link |
---|---|
EP (1) | EP1568073A1 (en) |
JP (1) | JP4762547B2 (en) |
KR (1) | KR100797210B1 (en) |
CN (1) | CN1720605A (en) |
AU (1) | AU2003294170A1 (en) |
FR (1) | FR2848334A1 (en) |
TW (1) | TWI289880B (en) |
WO (1) | WO2004053961A1 (en) |
Cited By (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2006140453A (en) * | 2004-11-10 | 2006-06-01 | Sharp Corp | Formation of low-defect germanium film by direct wafer bonding |
US9097987B2 (en) | 2002-11-12 | 2015-08-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101960604B (en) * | 2008-03-13 | 2013-07-10 | S.O.I.Tec绝缘体上硅技术公司 | Substrate having a charged zone in an insulating buried layer |
CN105023991B (en) * | 2014-04-30 | 2018-02-23 | 环视先进数字显示无锡有限公司 | A kind of manufacture method of the LED laminated circuit boards based on inorganic matter |
CN108231695A (en) * | 2016-12-15 | 2018-06-29 | 上海新微技术研发中心有限公司 | Composite substrate and method for manufacturing the same |
CN107195534B (en) * | 2017-05-24 | 2021-04-13 | 中国科学院上海微系统与信息技术研究所 | Ge composite substrate, substrate epitaxial structure and preparation method thereof |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5882987A (en) * | 1997-08-26 | 1999-03-16 | International Business Machines Corporation | Smart-cut process for the production of thin semiconductor material films |
WO2000015885A1 (en) * | 1998-09-10 | 2000-03-23 | France Telecom | Method for obtaining a monocrystalline germanium layer on a monocrystalline silicon substrate, and resulting products |
EP1050901A2 (en) * | 1999-04-30 | 2000-11-08 | Canon Kabushiki Kaisha | Method of separating composite member and process for producing thin film |
US6323108B1 (en) * | 1999-07-27 | 2001-11-27 | The United States Of America As Represented By The Secretary Of The Navy | Fabrication ultra-thin bonded semiconductor layers |
WO2002015244A2 (en) * | 2000-08-16 | 2002-02-21 | Massachusetts Institute Of Technology | Process for producing semiconductor article using graded expitaxial growth |
WO2002071491A1 (en) * | 2001-03-02 | 2002-09-12 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed cmos electronics and high speed analog circuits |
US20020168864A1 (en) * | 2001-04-04 | 2002-11-14 | Zhiyuan Cheng | Method for semiconductor device fabrication |
WO2003017358A1 (en) * | 2001-08-17 | 2003-02-27 | Rosemount Aerospace, Inc. | Method of manufacturing a semiconductor structure comprising sic on an oxide layer |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP3607194B2 (en) * | 1999-11-26 | 2005-01-05 | 株式会社東芝 | Semiconductor device, semiconductor device manufacturing method, and semiconductor substrate |
FR2809867B1 (en) * | 2000-05-30 | 2003-10-24 | Commissariat Energie Atomique | FRAGILE SUBSTRATE AND METHOD FOR MANUFACTURING SUCH SUBSTRATE |
JP2003249641A (en) * | 2002-02-22 | 2003-09-05 | Sharp Corp | Semiconductor substrate, manufacturing method therefor and semiconductor device |
-
2002
- 2002-12-06 FR FR0215499A patent/FR2848334A1/en active Pending
-
2003
- 2003-12-05 AU AU2003294170A patent/AU2003294170A1/en not_active Abandoned
- 2003-12-05 KR KR1020057010109A patent/KR100797210B1/en active IP Right Grant
- 2003-12-05 JP JP2004558309A patent/JP4762547B2/en not_active Expired - Lifetime
- 2003-12-05 WO PCT/IB2003/006397 patent/WO2004053961A1/en active Application Filing
- 2003-12-05 TW TW092134368A patent/TWI289880B/en not_active IP Right Cessation
- 2003-12-05 EP EP03789590A patent/EP1568073A1/en not_active Withdrawn
- 2003-12-05 CN CNA2003801052499A patent/CN1720605A/en active Pending
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5882987A (en) * | 1997-08-26 | 1999-03-16 | International Business Machines Corporation | Smart-cut process for the production of thin semiconductor material films |
WO2000015885A1 (en) * | 1998-09-10 | 2000-03-23 | France Telecom | Method for obtaining a monocrystalline germanium layer on a monocrystalline silicon substrate, and resulting products |
EP1050901A2 (en) * | 1999-04-30 | 2000-11-08 | Canon Kabushiki Kaisha | Method of separating composite member and process for producing thin film |
US6323108B1 (en) * | 1999-07-27 | 2001-11-27 | The United States Of America As Represented By The Secretary Of The Navy | Fabrication ultra-thin bonded semiconductor layers |
WO2002015244A2 (en) * | 2000-08-16 | 2002-02-21 | Massachusetts Institute Of Technology | Process for producing semiconductor article using graded expitaxial growth |
WO2002071491A1 (en) * | 2001-03-02 | 2002-09-12 | Amberwave Systems Corporation | Relaxed silicon germanium platform for high speed cmos electronics and high speed analog circuits |
US20020168864A1 (en) * | 2001-04-04 | 2002-11-14 | Zhiyuan Cheng | Method for semiconductor device fabrication |
WO2003017358A1 (en) * | 2001-08-17 | 2003-02-27 | Rosemount Aerospace, Inc. | Method of manufacturing a semiconductor structure comprising sic on an oxide layer |
Non-Patent Citations (1)
Title |
---|
TARASCHI GIANNI, LANGDO THOMAS A. ET AL.: "Relaxed SiGe-on-insulator fabricated via wafer bonding and etch back", JOURNAL OF VACUUM SCIENCE AND TECHNOLOGY - B, vol. 20, no. 2, March 2002 (2002-03-01), pages 725 - 727, XP002259419 * |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US9097987B2 (en) | 2002-11-12 | 2015-08-04 | Asml Netherlands B.V. | Lithographic apparatus and device manufacturing method |
JP2006140453A (en) * | 2004-11-10 | 2006-06-01 | Sharp Corp | Formation of low-defect germanium film by direct wafer bonding |
JP4651099B2 (en) * | 2004-11-10 | 2011-03-16 | シャープ株式会社 | Fabrication of low defect germanium films by direct wafer bonding. |
Also Published As
Publication number | Publication date |
---|---|
AU2003294170A1 (en) | 2004-06-30 |
EP1568073A1 (en) | 2005-08-31 |
KR100797210B1 (en) | 2008-01-22 |
TW200511393A (en) | 2005-03-16 |
KR20050084146A (en) | 2005-08-26 |
JP4762547B2 (en) | 2011-08-31 |
CN1720605A (en) | 2006-01-11 |
FR2848334A1 (en) | 2004-06-11 |
JP2006509361A (en) | 2006-03-16 |
TWI289880B (en) | 2007-11-11 |
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