WO2004055916A3 - Phase change memory and manufacturing method therefor - Google Patents

Phase change memory and manufacturing method therefor Download PDF

Info

Publication number
WO2004055916A3
WO2004055916A3 PCT/US2003/018374 US0318374W WO2004055916A3 WO 2004055916 A3 WO2004055916 A3 WO 2004055916A3 US 0318374 W US0318374 W US 0318374W WO 2004055916 A3 WO2004055916 A3 WO 2004055916A3
Authority
WO
WIPO (PCT)
Prior art keywords
phase change
change memory
manufacturing
method therefor
electrode
Prior art date
Application number
PCT/US2003/018374
Other languages
French (fr)
Other versions
WO2004055916A2 (en
Inventor
Charles H Dennison
Original Assignee
Ovonyx Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ovonyx Inc filed Critical Ovonyx Inc
Priority to AU2003239249A priority Critical patent/AU2003239249A1/en
Priority to EP03734545A priority patent/EP1570532B1/en
Priority to DE60308726T priority patent/DE60308726T2/en
Publication of WO2004055916A2 publication Critical patent/WO2004055916A2/en
Publication of WO2004055916A3 publication Critical patent/WO2004055916A3/en

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/20—Multistable switching devices, e.g. memristors
    • H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B69/00—Erasable-and-programmable ROM [EPROM] devices not provided for in groups H10B41/00 - H10B63/00, e.g. ultraviolet erasable-and-programmable ROM [UVEPROM] devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/011—Manufacture or treatment of multistable switching devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/821—Device geometry
    • H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
    • H10N70/801—Constructional details of multistable switching devices
    • H10N70/881—Switching materials
    • H10N70/882—Compounds of sulfur, selenium or tellurium, e.g. chalcogenides
    • H10N70/8828—Tellurides, e.g. GeSbTe
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10B—ELECTRONIC MEMORY DEVICES
    • H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
    • H10B63/20—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having two electrodes, e.g. diodes

Abstract

Briefly, in accordance with an embodiment of the invention, a phase change memory and a method to manufacture a phase change memory is provided. The phase change memory may include an electrode (180), an adhesive material (220), an insulating material (210) between the electrode and the adhesive material, wherein a portion of the adhesive material, a portion of the insulating material, and a portion of the electrode form a substantially planar surface. The phase change memory may further include a phase change material (300) on the substantially planar surface and contacting the electrode, the adhesive material, and the insulating material.
PCT/US2003/018374 2002-12-13 2003-06-09 Phase change memory and manufacturing method therefor WO2004055916A2 (en)

Priority Applications (3)

Application Number Priority Date Filing Date Title
AU2003239249A AU2003239249A1 (en) 2002-12-13 2003-06-09 Phase change memory and manufacturing method therefor
EP03734545A EP1570532B1 (en) 2002-12-13 2003-06-09 Phase change memory and manufacturing method therefor
DE60308726T DE60308726T2 (en) 2002-12-13 2003-06-09 PHASE CHANGING MEMBERS AND THEIR MANUFACTURING PROCESS

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US10/319,753 2002-12-13
US10/319,753 US6744088B1 (en) 2002-12-13 2002-12-13 Phase change memory device on a planar composite layer

Publications (2)

Publication Number Publication Date
WO2004055916A2 WO2004055916A2 (en) 2004-07-01
WO2004055916A3 true WO2004055916A3 (en) 2004-08-12

Family

ID=32325999

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/US2003/018374 WO2004055916A2 (en) 2002-12-13 2003-06-09 Phase change memory and manufacturing method therefor

Country Status (10)

Country Link
US (1) US6744088B1 (en)
EP (1) EP1570532B1 (en)
KR (1) KR100520926B1 (en)
CN (1) CN100401546C (en)
AT (1) ATE341101T1 (en)
AU (1) AU2003239249A1 (en)
DE (2) DE60308726T2 (en)
SG (1) SG133402A1 (en)
TW (1) TWI236730B (en)
WO (1) WO2004055916A2 (en)

Families Citing this family (220)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7247876B2 (en) * 2000-06-30 2007-07-24 Intel Corporation Three dimensional programmable device and method for fabricating the same
US6891747B2 (en) * 2002-02-20 2005-05-10 Stmicroelectronics S.R.L. Phase change memory cell and manufacturing method thereof using minitrenches
US6864503B2 (en) * 2002-08-09 2005-03-08 Macronix International Co., Ltd. Spacer chalcogenide memory method and device
US7186998B2 (en) * 2003-03-10 2007-03-06 Energy Conversion Devices, Inc. Multi-terminal device having logic functional
JP4634014B2 (en) * 2003-05-22 2011-02-16 株式会社日立製作所 Semiconductor memory device
KR100615586B1 (en) * 2003-07-23 2006-08-25 삼성전자주식회사 Phase change memory device including localized phase transition area in porous dielectric layer and method of forming the same
US20050032269A1 (en) * 2003-08-04 2005-02-10 Daniel Xu Forming planarized semiconductor structures
US20050029504A1 (en) * 2003-08-04 2005-02-10 Karpov Ilya V. Reducing parasitic conductive paths in phase change memories
US7112836B2 (en) * 2004-03-17 2006-09-26 Macronix International Co., Ltd. Method of forming a chalcogenide memory cell having a horizontal electrode and a memory cell produced by the method
CN101834198A (en) * 2004-05-14 2010-09-15 瑞萨电子株式会社 Semiconductor storage unit
US20050263801A1 (en) * 2004-05-27 2005-12-01 Jae-Hyun Park Phase-change memory device having a barrier layer and manufacturing method
US7411208B2 (en) * 2004-05-27 2008-08-12 Samsung Electronics Co., Ltd. Phase-change memory device having a barrier layer and manufacturing method
US7482616B2 (en) * 2004-05-27 2009-01-27 Samsung Electronics Co., Ltd. Semiconductor devices having phase change memory cells, electronic systems employing the same and methods of fabricating the same
KR100655796B1 (en) 2004-08-17 2006-12-11 삼성전자주식회사 Phase-changeable memory device and method of manufacturing the same
US7687830B2 (en) * 2004-09-17 2010-03-30 Ovonyx, Inc. Phase change memory with ovonic threshold switch
US7338857B2 (en) * 2004-10-14 2008-03-04 Ovonyx, Inc. Increasing adherence of dielectrics to phase change materials
US7135727B2 (en) * 2004-11-10 2006-11-14 Macronix International Co., Ltd. I-shaped and L-shaped contact structures and their fabrication methods
US20060108667A1 (en) * 2004-11-22 2006-05-25 Macronix International Co., Ltd. Method for manufacturing a small pin on integrated circuits or other devices
US7220983B2 (en) * 2004-12-09 2007-05-22 Macronix International Co., Ltd. Self-aligned small contact phase-change memory method and device
DE102004059428A1 (en) * 2004-12-09 2006-06-22 Infineon Technologies Ag Manufacturing method for a microelectronic electrode structure, in particular for a PCM memory element, and corresponding microelectronic electrode structure
KR100612913B1 (en) * 2004-12-16 2006-08-16 한국과학기술연구원 PHASE-CHANGE RAM CONTAINING AlN THERMAL DISSIPATION LAYER AND TiN ELECTRODE
EP1677372B1 (en) * 2004-12-30 2008-05-14 STMicroelectronics S.r.l. Phase change memory and manufacturing method thereof
US7709334B2 (en) 2005-12-09 2010-05-04 Macronix International Co., Ltd. Stacked non-volatile memory device and methods for fabricating the same
TWI261915B (en) * 2005-01-07 2006-09-11 Ind Tech Res Inst Phase change memory and fabricating method thereof
JP2006278864A (en) * 2005-03-30 2006-10-12 Renesas Technology Corp Phase change non-volatile memory and its manufacturing method
DE602005018744D1 (en) 2005-04-08 2010-02-25 St Microelectronics Srl Lateral phase change memory
US20060249724A1 (en) * 2005-05-06 2006-11-09 International Business Machines Corporation Method and structure for Peltier-controlled phase change memory
US7514288B2 (en) * 2005-06-17 2009-04-07 Macronix International Co., Ltd. Manufacturing methods for thin film fuse phase change ram
US7534647B2 (en) 2005-06-17 2009-05-19 Macronix International Co., Ltd. Damascene phase change RAM and manufacturing method
US7238994B2 (en) 2005-06-17 2007-07-03 Macronix International Co., Ltd. Thin film plate phase change ram circuit and manufacturing method
US7696503B2 (en) * 2005-06-17 2010-04-13 Macronix International Co., Ltd. Multi-level memory cell having phase change element and asymmetrical thermal boundary
US7514367B2 (en) * 2005-06-17 2009-04-07 Macronix International Co., Ltd. Method for manufacturing a narrow structure on an integrated circuit
US7321130B2 (en) 2005-06-17 2008-01-22 Macronix International Co., Ltd. Thin film fuse phase change RAM and manufacturing method
US7598512B2 (en) * 2005-06-17 2009-10-06 Macronix International Co., Ltd. Thin film fuse phase change cell with thermal isolation layer and manufacturing method
US8237140B2 (en) * 2005-06-17 2012-08-07 Macronix International Co., Ltd. Self-aligned, embedded phase change RAM
TWI273703B (en) * 2005-08-19 2007-02-11 Ind Tech Res Inst A manufacture method and structure for improving the characteristics of phase change memory
US7768815B2 (en) * 2005-08-23 2010-08-03 International Business Machines Corporation Optoelectronic memory devices
US7582413B2 (en) * 2005-09-26 2009-09-01 Asml Netherlands B.V. Substrate, method of exposing a substrate, machine readable medium
US20070111429A1 (en) * 2005-11-14 2007-05-17 Macronix International Co., Ltd. Method of manufacturing a pipe shaped phase change memory
US7397060B2 (en) * 2005-11-14 2008-07-08 Macronix International Co., Ltd. Pipe shaped phase change memory
US7786460B2 (en) * 2005-11-15 2010-08-31 Macronix International Co., Ltd. Phase change memory device and manufacturing method
US7394088B2 (en) * 2005-11-15 2008-07-01 Macronix International Co., Ltd. Thermally contained/insulated phase change memory device and method (combined)
US7450411B2 (en) 2005-11-15 2008-11-11 Macronix International Co., Ltd. Phase change memory device and manufacturing method
US7635855B2 (en) 2005-11-15 2009-12-22 Macronix International Co., Ltd. I-shaped phase change memory cell
US7414258B2 (en) 2005-11-16 2008-08-19 Macronix International Co., Ltd. Spacer electrode small pin phase change memory RAM and manufacturing method
US7449710B2 (en) * 2005-11-21 2008-11-11 Macronix International Co., Ltd. Vacuum jacket for phase change memory element
US7507986B2 (en) 2005-11-21 2009-03-24 Macronix International Co., Ltd. Thermal isolation for an active-sidewall phase change memory cell
US7479649B2 (en) * 2005-11-21 2009-01-20 Macronix International Co., Ltd. Vacuum jacketed electrode for phase change memory element
US7829876B2 (en) * 2005-11-21 2010-11-09 Macronix International Co., Ltd. Vacuum cell thermal isolation for a phase change memory device
CN100524878C (en) 2005-11-21 2009-08-05 旺宏电子股份有限公司 Programmable resistor material storage array with air insulating unit
US7688619B2 (en) 2005-11-28 2010-03-30 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
US7459717B2 (en) 2005-11-28 2008-12-02 Macronix International Co., Ltd. Phase change memory cell and manufacturing method
TWI291745B (en) * 2005-11-30 2007-12-21 Ind Tech Res Inst Lateral phase change memory with spacer electrodes and method of manufacturing the same
US7521364B2 (en) 2005-12-02 2009-04-21 Macronix Internation Co., Ltd. Surface topology improvement method for plug surface areas
US7605079B2 (en) * 2005-12-05 2009-10-20 Macronix International Co., Ltd. Manufacturing method for phase change RAM with electrode layer process
US7642539B2 (en) * 2005-12-13 2010-01-05 Macronix International Co., Ltd. Thin film fuse phase change cell with thermal isolation pad and manufacturing method
US7531825B2 (en) * 2005-12-27 2009-05-12 Macronix International Co., Ltd. Method for forming self-aligned thermal isolation cell for a variable resistance memory array
US8062833B2 (en) * 2005-12-30 2011-11-22 Macronix International Co., Ltd. Chalcogenide layer etching method
US7595218B2 (en) * 2006-01-09 2009-09-29 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US20070158632A1 (en) * 2006-01-09 2007-07-12 Macronix International Co., Ltd. Method for Fabricating a Pillar-Shaped Phase Change Memory Element
US7560337B2 (en) * 2006-01-09 2009-07-14 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US7741636B2 (en) * 2006-01-09 2010-06-22 Macronix International Co., Ltd. Programmable resistive RAM and manufacturing method
US7825396B2 (en) * 2006-01-11 2010-11-02 Macronix International Co., Ltd. Self-align planerized bottom electrode phase change memory and manufacturing method
EP1811564B1 (en) * 2006-01-20 2010-03-10 STMicroelectronics S.r.l. Electrical fuse device based on a phase-change memory element and corresponding programming method
US7432206B2 (en) * 2006-01-24 2008-10-07 Macronix International Co., Ltd. Self-aligned manufacturing method, and manufacturing method for thin film fuse phase change ram
US7456421B2 (en) * 2006-01-30 2008-11-25 Macronix International Co., Ltd. Vertical side wall active pin structures in a phase change memory and manufacturing methods
US7897061B2 (en) * 2006-02-01 2011-03-01 Cabot Microelectronics Corporation Compositions and methods for CMP of phase change alloys
US7956358B2 (en) * 2006-02-07 2011-06-07 Macronix International Co., Ltd. I-shaped phase change memory cell with thermal isolation
KR100718156B1 (en) 2006-02-27 2007-05-14 삼성전자주식회사 Phase change random access memory and method of manufacturing the same
US7456420B2 (en) * 2006-03-07 2008-11-25 International Business Machines Corporation Electrode for phase change memory device and method
US7910907B2 (en) * 2006-03-15 2011-03-22 Macronix International Co., Ltd. Manufacturing method for pipe-shaped electrode phase change memory
US7345899B2 (en) * 2006-04-07 2008-03-18 Infineon Technologies Ag Memory having storage locations within a common volume of phase change material
US7554144B2 (en) 2006-04-17 2009-06-30 Macronix International Co., Ltd. Memory device and manufacturing method
US7928421B2 (en) 2006-04-21 2011-04-19 Macronix International Co., Ltd. Phase change memory cell with vacuum spacer
US8129706B2 (en) * 2006-05-05 2012-03-06 Macronix International Co., Ltd. Structures and methods of a bistable resistive random access memory
US7608848B2 (en) * 2006-05-09 2009-10-27 Macronix International Co., Ltd. Bridge resistance random access memory device with a singular contact structure
US7423300B2 (en) 2006-05-24 2008-09-09 Macronix International Co., Ltd. Single-mask phase change memory element
US7820997B2 (en) * 2006-05-30 2010-10-26 Macronix International Co., Ltd. Resistor random access memory cell with reduced active area and reduced contact areas
US7732800B2 (en) * 2006-05-30 2010-06-08 Macronix International Co., Ltd. Resistor random access memory cell with L-shaped electrode
CN100423232C (en) * 2006-06-02 2008-10-01 中国科学院上海微系统与信息技术研究所 Method for preparing nanoelectronic memory by electron beam exposure and mechanochemical polishing process
US7696506B2 (en) 2006-06-27 2010-04-13 Macronix International Co., Ltd. Memory cell with memory material insulation and manufacturing method
US7785920B2 (en) * 2006-07-12 2010-08-31 Macronix International Co., Ltd. Method for making a pillar-type phase change memory element
US7442603B2 (en) * 2006-08-16 2008-10-28 Macronix International Co., Ltd. Self-aligned structure and method for confining a melting point in a resistor random access memory
US7772581B2 (en) * 2006-09-11 2010-08-10 Macronix International Co., Ltd. Memory device having wide area phase change element and small electrode contact area
KR100873878B1 (en) 2006-09-27 2008-12-15 삼성전자주식회사 Manufacturing method of phase change memory unit and manufacturing method of phase change memory device using same
KR100766504B1 (en) 2006-09-29 2007-10-15 삼성전자주식회사 Semiconductor device and method of fabricating the same
US7504653B2 (en) 2006-10-04 2009-03-17 Macronix International Co., Ltd. Memory cell device with circumferentially-extending memory element
US20080090324A1 (en) * 2006-10-12 2008-04-17 Lee Jong-Won S Forming sublithographic heaters for phase change memories
US7510929B2 (en) * 2006-10-18 2009-03-31 Macronix International Co., Ltd. Method for making memory cell device
KR100766499B1 (en) * 2006-10-20 2007-10-15 삼성전자주식회사 Phase change memory device and method of forming the same
US20080094885A1 (en) * 2006-10-24 2008-04-24 Macronix International Co., Ltd. Bistable Resistance Random Access Memory Structures with Multiple Memory Layers and Multilevel Memory States
US7527985B2 (en) * 2006-10-24 2009-05-05 Macronix International Co., Ltd. Method for manufacturing a resistor random access memory with reduced active area and reduced contact areas
US7863655B2 (en) * 2006-10-24 2011-01-04 Macronix International Co., Ltd. Phase change memory cells with dual access devices
US7388771B2 (en) 2006-10-24 2008-06-17 Macronix International Co., Ltd. Methods of operating a bistable resistance random access memory with multiple memory layers and multilevel memory states
KR100827661B1 (en) * 2006-10-31 2008-05-07 삼성전자주식회사 Phase change memory devices having dual lower electrodes and methods fabricating the same
KR100780964B1 (en) 2006-11-13 2007-12-03 삼성전자주식회사 Phase change memory device having cell diode and method of fabricating the same
US8067762B2 (en) 2006-11-16 2011-11-29 Macronix International Co., Ltd. Resistance random access memory structure for enhanced retention
US7728318B2 (en) * 2006-11-16 2010-06-01 Sandisk Corporation Nonvolatile phase change memory cell having a reduced contact area
US8163593B2 (en) 2006-11-16 2012-04-24 Sandisk Corporation Method of making a nonvolatile phase change memory cell having a reduced contact area
WO2008061194A1 (en) * 2006-11-16 2008-05-22 Sandisk 3D Llc Nonvolatile phase change memory cell having a reduced contact area and method of making
US20080137400A1 (en) * 2006-12-06 2008-06-12 Macronix International Co., Ltd. Phase Change Memory Cell with Thermal Barrier and Method for Fabricating the Same
US7473576B2 (en) * 2006-12-06 2009-01-06 Macronix International Co., Ltd. Method for making a self-converged void and bottom electrode for memory cell
US7476587B2 (en) * 2006-12-06 2009-01-13 Macronix International Co., Ltd. Method for making a self-converged memory material element for memory cell
US7682868B2 (en) 2006-12-06 2010-03-23 Macronix International Co., Ltd. Method for making a keyhole opening during the manufacture of a memory cell
US7697316B2 (en) * 2006-12-07 2010-04-13 Macronix International Co., Ltd. Multi-level cell resistance random access memory with metal oxides
US7903447B2 (en) * 2006-12-13 2011-03-08 Macronix International Co., Ltd. Method, apparatus and computer program product for read before programming process on programmable resistive memory cell
US8344347B2 (en) * 2006-12-15 2013-01-01 Macronix International Co., Ltd. Multi-layer electrode structure
US7718989B2 (en) * 2006-12-28 2010-05-18 Macronix International Co., Ltd. Resistor random access memory cell device
US7515461B2 (en) * 2007-01-05 2009-04-07 Macronix International Co., Ltd. Current compliant sensing architecture for multilevel phase change memory
US7433226B2 (en) 2007-01-09 2008-10-07 Macronix International Co., Ltd. Method, apparatus and computer program product for read before programming process on multiple programmable resistive memory cell
US7440315B2 (en) 2007-01-09 2008-10-21 Macronix International Co., Ltd. Method, apparatus and computer program product for stepped reset programming process on programmable resistive memory cell
US7535756B2 (en) 2007-01-31 2009-05-19 Macronix International Co., Ltd. Method to tighten set distribution for PCRAM
US7663135B2 (en) 2007-01-31 2010-02-16 Macronix International Co., Ltd. Memory cell having a side electrode contact
US7619311B2 (en) 2007-02-02 2009-11-17 Macronix International Co., Ltd. Memory cell device with coplanar electrode surface and method
US7701759B2 (en) * 2007-02-05 2010-04-20 Macronix International Co., Ltd. Memory cell device and programming methods
US7483292B2 (en) * 2007-02-07 2009-01-27 Macronix International Co., Ltd. Memory cell with separate read and program paths
US7463512B2 (en) * 2007-02-08 2008-12-09 Macronix International Co., Ltd. Memory element with reduced-current phase change element
US8138028B2 (en) * 2007-02-12 2012-03-20 Macronix International Co., Ltd Method for manufacturing a phase change memory device with pillar bottom electrode
US7884343B2 (en) 2007-02-14 2011-02-08 Macronix International Co., Ltd. Phase change memory cell with filled sidewall memory element and method for fabricating the same
US8008643B2 (en) * 2007-02-21 2011-08-30 Macronix International Co., Ltd. Phase change memory cell with heater and method for fabricating the same
US7619237B2 (en) * 2007-02-21 2009-11-17 Macronix International Co., Ltd. Programmable resistive memory cell with self-forming gap
US7956344B2 (en) * 2007-02-27 2011-06-07 Macronix International Co., Ltd. Memory cell with memory element contacting ring-shaped upper end of bottom electrode
US7786461B2 (en) 2007-04-03 2010-08-31 Macronix International Co., Ltd. Memory structure with reduced-size memory element between memory material portions
US8610098B2 (en) 2007-04-06 2013-12-17 Macronix International Co., Ltd. Phase change memory bridge cell with diode isolation device
US7755076B2 (en) 2007-04-17 2010-07-13 Macronix International Co., Ltd. 4F2 self align side wall active phase change memory
US7745231B2 (en) * 2007-04-17 2010-06-29 Micron Technology, Inc. Resistive memory cell fabrication methods and devices
US7483316B2 (en) * 2007-04-24 2009-01-27 Macronix International Co., Ltd. Method and apparatus for refreshing programmable resistive memory
US7593254B2 (en) 2007-05-25 2009-09-22 Micron Technology, Inc. Variable resistance memory device with an interfacial adhesion heating layer, systems using the same and methods of forming the same
US8513637B2 (en) 2007-07-13 2013-08-20 Macronix International Co., Ltd. 4F2 self align fin bottom electrodes FET drive phase change memory
EP2017906B1 (en) * 2007-07-17 2011-03-23 STMicroelectronics Srl Process for manufacturing a copper compatible chalcogenide phase change memory element and corresponding phase change memory element
TWI402980B (en) 2007-07-20 2013-07-21 Macronix Int Co Ltd Resistive memory structure with buffer layer
US7884342B2 (en) * 2007-07-31 2011-02-08 Macronix International Co., Ltd. Phase change memory bridge cell
US7729161B2 (en) * 2007-08-02 2010-06-01 Macronix International Co., Ltd. Phase change memory with dual word lines and source lines and method of operating same
US9018615B2 (en) 2007-08-03 2015-04-28 Macronix International Co., Ltd. Resistor random access memory structure having a defined small area of electrical contact
US7642125B2 (en) * 2007-09-14 2010-01-05 Macronix International Co., Ltd. Phase change memory cell in via array with self-aligned, self-converged bottom electrode and method for manufacturing
US8178386B2 (en) 2007-09-14 2012-05-15 Macronix International Co., Ltd. Phase change memory cell array with self-converged bottom electrode and method for manufacturing
US7551473B2 (en) * 2007-10-12 2009-06-23 Macronix International Co., Ltd. Programmable resistive memory with diode structure
US7919766B2 (en) 2007-10-22 2011-04-05 Macronix International Co., Ltd. Method for making self aligning pillar memory cell device
US7804083B2 (en) * 2007-11-14 2010-09-28 Macronix International Co., Ltd. Phase change memory cell including a thermal protect bottom electrode and manufacturing methods
US7646631B2 (en) * 2007-12-07 2010-01-12 Macronix International Co., Ltd. Phase change memory cell having interface structures with essentially equal thermal impedances and manufacturing methods
US7639527B2 (en) 2008-01-07 2009-12-29 Macronix International Co., Ltd. Phase change memory dynamic resistance test and manufacturing methods
US7879643B2 (en) * 2008-01-18 2011-02-01 Macronix International Co., Ltd. Memory cell with memory element contacting an inverted T-shaped bottom electrode
US20090185411A1 (en) * 2008-01-22 2009-07-23 Thomas Happ Integrated circuit including diode memory cells
US7879645B2 (en) 2008-01-28 2011-02-01 Macronix International Co., Ltd. Fill-in etching free pore device
US8158965B2 (en) 2008-02-05 2012-04-17 Macronix International Co., Ltd. Heating center PCRAM structure and methods for making
US8084842B2 (en) 2008-03-25 2011-12-27 Macronix International Co., Ltd. Thermally stabilized electrode structure
US7729163B2 (en) * 2008-03-26 2010-06-01 Micron Technology, Inc. Phase change memory
US8030634B2 (en) 2008-03-31 2011-10-04 Macronix International Co., Ltd. Memory array with diode driver and method for fabricating the same
US7825398B2 (en) 2008-04-07 2010-11-02 Macronix International Co., Ltd. Memory cell having improved mechanical stability
US7791057B2 (en) 2008-04-22 2010-09-07 Macronix International Co., Ltd. Memory cell having a buried phase change region and method for fabricating the same
US8077505B2 (en) 2008-05-07 2011-12-13 Macronix International Co., Ltd. Bipolar switching of phase change device
US7701750B2 (en) 2008-05-08 2010-04-20 Macronix International Co., Ltd. Phase change device having two or more substantial amorphous regions in high resistance state
US8415651B2 (en) 2008-06-12 2013-04-09 Macronix International Co., Ltd. Phase change memory cell having top and bottom sidewall contacts
US7759770B2 (en) * 2008-06-23 2010-07-20 Qimonda Ag Integrated circuit including memory element with high speed low current phase change material
US8134857B2 (en) 2008-06-27 2012-03-13 Macronix International Co., Ltd. Methods for high speed reading operation of phase change memory and device employing same
US7932506B2 (en) 2008-07-22 2011-04-26 Macronix International Co., Ltd. Fully self-aligned pore-type memory cell having diode access device
US7903457B2 (en) 2008-08-19 2011-03-08 Macronix International Co., Ltd. Multiple phase change materials in an integrated circuit for system on a chip application
US7719913B2 (en) 2008-09-12 2010-05-18 Macronix International Co., Ltd. Sensing circuit for PCRAM applications
US8324605B2 (en) 2008-10-02 2012-12-04 Macronix International Co., Ltd. Dielectric mesh isolated phase change structure for phase change memory
US7897954B2 (en) 2008-10-10 2011-03-01 Macronix International Co., Ltd. Dielectric-sandwiched pillar memory device
CN101728481B (en) * 2008-10-24 2012-05-16 中芯国际集成电路制造(上海)有限公司 Method for manufacturing phase-change semiconductor device and phase-change semiconductor device
US8036014B2 (en) * 2008-11-06 2011-10-11 Macronix International Co., Ltd. Phase change memory program method without over-reset
US8664689B2 (en) 2008-11-07 2014-03-04 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline plug and single-crystal semiconductor regions
US8907316B2 (en) 2008-11-07 2014-12-09 Macronix International Co., Ltd. Memory cell access device having a pn-junction with polycrystalline and single crystal semiconductor regions
US7869270B2 (en) 2008-12-29 2011-01-11 Macronix International Co., Ltd. Set algorithm for phase change memory cell
US8377741B2 (en) * 2008-12-30 2013-02-19 Stmicroelectronics S.R.L. Self-heating phase change memory cell architecture
US8089137B2 (en) 2009-01-07 2012-01-03 Macronix International Co., Ltd. Integrated circuit memory with single crystal silicon on silicide driver and manufacturing method
US8107283B2 (en) 2009-01-12 2012-01-31 Macronix International Co., Ltd. Method for setting PCRAM devices
US8030635B2 (en) 2009-01-13 2011-10-04 Macronix International Co., Ltd. Polysilicon plug bipolar transistor for phase change memory
US8064247B2 (en) 2009-01-14 2011-11-22 Macronix International Co., Ltd. Rewritable memory device based on segregation/re-absorption
US8933536B2 (en) 2009-01-22 2015-01-13 Macronix International Co., Ltd. Polysilicon pillar bipolar transistor with self-aligned memory element
US8084760B2 (en) 2009-04-20 2011-12-27 Macronix International Co., Ltd. Ring-shaped electrode and manufacturing method for same
US8173987B2 (en) 2009-04-27 2012-05-08 Macronix International Co., Ltd. Integrated circuit 3D phase change memory array and manufacturing method
US8097871B2 (en) 2009-04-30 2012-01-17 Macronix International Co., Ltd. Low operational current phase change memory structures
US7933139B2 (en) 2009-05-15 2011-04-26 Macronix International Co., Ltd. One-transistor, one-resistor, one-capacitor phase change memory
US8350316B2 (en) 2009-05-22 2013-01-08 Macronix International Co., Ltd. Phase change memory cells having vertical channel access transistor and memory plane
US7968876B2 (en) 2009-05-22 2011-06-28 Macronix International Co., Ltd. Phase change memory cell having vertical channel access transistor
US8809829B2 (en) 2009-06-15 2014-08-19 Macronix International Co., Ltd. Phase change memory having stabilized microstructure and manufacturing method
US8406033B2 (en) 2009-06-22 2013-03-26 Macronix International Co., Ltd. Memory device and method for sensing and fixing margin cells
US8363463B2 (en) 2009-06-25 2013-01-29 Macronix International Co., Ltd. Phase change memory having one or more non-constant doping profiles
US8238149B2 (en) 2009-06-25 2012-08-07 Macronix International Co., Ltd. Methods and apparatus for reducing defect bits in phase change memory
US8536559B2 (en) 2009-07-07 2013-09-17 Macronix International Co., Ltd. Phase change memory
US8110822B2 (en) 2009-07-15 2012-02-07 Macronix International Co., Ltd. Thermal protect PCRAM structure and methods for making
US8198619B2 (en) 2009-07-15 2012-06-12 Macronix International Co., Ltd. Phase change memory cell structure
US7894254B2 (en) 2009-07-15 2011-02-22 Macronix International Co., Ltd. Refresh circuitry for phase change memory
TWI422084B (en) * 2009-08-05 2014-01-01 Macronix Int Co Ltd Phase change memory
US8283650B2 (en) 2009-08-28 2012-10-09 International Business Machines Corporation Flat lower bottom electrode for phase change memory cell
US8012790B2 (en) * 2009-08-28 2011-09-06 International Business Machines Corporation Chemical mechanical polishing stop layer for fully amorphous phase change memory pore cell
US8283202B2 (en) 2009-08-28 2012-10-09 International Business Machines Corporation Single mask adder phase change memory element
US8064248B2 (en) 2009-09-17 2011-11-22 Macronix International Co., Ltd. 2T2R-1T1R mix mode phase change memory array
US8278139B2 (en) 2009-09-25 2012-10-02 Applied Materials, Inc. Passivating glue layer to improve amorphous carbon to metal adhesion
US8481396B2 (en) * 2009-10-23 2013-07-09 Sandisk 3D Llc Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
US8178387B2 (en) 2009-10-23 2012-05-15 Macronix International Co., Ltd. Methods for reducing recrystallization time for a phase change material
US8551855B2 (en) * 2009-10-23 2013-10-08 Sandisk 3D Llc Memory cell that includes a carbon-based reversible resistance switching element compatible with a steering element, and methods of forming the same
US8129268B2 (en) 2009-11-16 2012-03-06 International Business Machines Corporation Self-aligned lower bottom electrode
US8233317B2 (en) * 2009-11-16 2012-07-31 International Business Machines Corporation Phase change memory device suitable for high temperature operation
US7943420B1 (en) * 2009-11-25 2011-05-17 International Business Machines Corporation Single mask adder phase change memory element
US8551850B2 (en) * 2009-12-07 2013-10-08 Sandisk 3D Llc Methods of forming a reversible resistance-switching metal-insulator-metal structure
US8017433B2 (en) * 2010-02-09 2011-09-13 International Business Machines Corporation Post deposition method for regrowth of crystalline phase change material
US8389375B2 (en) * 2010-02-11 2013-03-05 Sandisk 3D Llc Memory cell formed using a recess and methods for forming the same
US8237146B2 (en) * 2010-02-24 2012-08-07 Sandisk 3D Llc Memory cell with silicon-containing carbon switching layer and methods for forming the same
US20110210306A1 (en) * 2010-02-26 2011-09-01 Yubao Li Memory cell that includes a carbon-based memory element and methods of forming the same
US8471360B2 (en) 2010-04-14 2013-06-25 Sandisk 3D Llc Memory cell with carbon switching material having a reduced cross-sectional area and methods for forming the same
CN102237492B (en) * 2010-04-29 2013-04-17 中芯国际集成电路制造(上海)有限公司 Formation method for phase-change memory unit
US8729521B2 (en) 2010-05-12 2014-05-20 Macronix International Co., Ltd. Self aligned fin-type programmable memory cell
US8310864B2 (en) 2010-06-15 2012-11-13 Macronix International Co., Ltd. Self-aligned bit line under word line memory array
CN102005466A (en) * 2010-09-28 2011-04-06 中国科学院上海微系统与信息技术研究所 Phase change memory structure with low-k medium heat insulating material and preparation method
US8395935B2 (en) 2010-10-06 2013-03-12 Macronix International Co., Ltd. Cross-point self-aligned reduced cell size phase change memory
US8497705B2 (en) 2010-11-09 2013-07-30 Macronix International Co., Ltd. Phase change device for interconnection of programmable logic device
US8467238B2 (en) 2010-11-15 2013-06-18 Macronix International Co., Ltd. Dynamic pulse operation for phase change memory
CN102637820B (en) * 2011-02-09 2014-06-04 中芯国际集成电路制造(上海)有限公司 Phase change random access memory forming method
US8987700B2 (en) 2011-12-02 2015-03-24 Macronix International Co., Ltd. Thermally confined electrode for programmable resistance memory
US8778211B2 (en) 2012-07-17 2014-07-15 Cabot Microelectronics Corporation GST CMP slurries
CN103151459B (en) * 2013-03-28 2015-02-18 天津理工大学 Hafnium-oxynitride-based low-power consumption resistive random access memory and preparation method for same
JP5740443B2 (en) * 2013-09-11 2015-06-24 株式会社東芝 Transmission system
US9336879B2 (en) 2014-01-24 2016-05-10 Macronix International Co., Ltd. Multiple phase change materials in an integrated circuit for system on a chip application
US9559113B2 (en) 2014-05-01 2017-01-31 Macronix International Co., Ltd. SSL/GSL gate oxide in 3D vertical channel NAND
US9159412B1 (en) 2014-07-15 2015-10-13 Macronix International Co., Ltd. Staggered write and verify for phase change memory
US9672906B2 (en) 2015-06-19 2017-06-06 Macronix International Co., Ltd. Phase change memory with inter-granular switching
US11430954B2 (en) * 2020-11-30 2022-08-30 International Business Machines Corporation Resistance drift mitigation in non-volatile memory cell

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020080647A1 (en) * 2000-12-21 2002-06-27 Chien Chiang Metal structure for a phase-change memory device
US20020175322A1 (en) * 1996-10-02 2002-11-28 Doan Trung T. Method to create a controlable ovanic phase-change semiconductor memory device and methods of fabricating the same
US20020179896A1 (en) * 1995-06-07 2002-12-05 Harshfield Steven T. Method and apparatus for forming an integrated circuit electrode having a reduced contact area

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US3271591A (en) * 1963-09-20 1966-09-06 Energy Conversion Devices Inc Symmetrical current controlling device
US3530441A (en) * 1969-01-15 1970-09-22 Energy Conversion Devices Inc Method and apparatus for storing and retrieving information
US5296716A (en) * 1991-01-18 1994-03-22 Energy Conversion Devices, Inc. Electrically erasable, directly overwritable, multibit single cell memory elements and arrays fabricated therefrom
US5789758A (en) * 1995-06-07 1998-08-04 Micron Technology, Inc. Chalcogenide memory cell with a plurality of chalcogenide electrodes
US5879955A (en) * 1995-06-07 1999-03-09 Micron Technology, Inc. Method for fabricating an array of ultra-small pores for chalcogenide memory cells
US6025220A (en) * 1996-06-18 2000-02-15 Micron Technology, Inc. Method of forming a polysilicon diode and devices incorporating such diode
US5998244A (en) * 1996-08-22 1999-12-07 Micron Technology, Inc. Memory cell incorporating a chalcogenide element and method of making same
US6087674A (en) * 1996-10-28 2000-07-11 Energy Conversion Devices, Inc. Memory element with memory material comprising phase-change material and dielectric material
US5781557A (en) * 1996-12-31 1998-07-14 Intel Corporation Memory test mode for wordline resistive defects
US6031287A (en) * 1997-06-18 2000-02-29 Micron Technology, Inc. Contact structure and memory element incorporating the same
US5933365A (en) * 1997-06-19 1999-08-03 Energy Conversion Devices, Inc. Memory element with energy control mechanism
US6141241A (en) * 1998-06-23 2000-10-31 Energy Conversion Devices, Inc. Universal memory element with systems employing same and apparatus and method for reading, writing and programming same

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20020179896A1 (en) * 1995-06-07 2002-12-05 Harshfield Steven T. Method and apparatus for forming an integrated circuit electrode having a reduced contact area
US20020175322A1 (en) * 1996-10-02 2002-11-28 Doan Trung T. Method to create a controlable ovanic phase-change semiconductor memory device and methods of fabricating the same
US20020080647A1 (en) * 2000-12-21 2002-06-27 Chien Chiang Metal structure for a phase-change memory device

Also Published As

Publication number Publication date
KR20040053769A (en) 2004-06-24
CN1506973A (en) 2004-06-23
DE10339061A1 (en) 2004-07-15
AU2003239249A8 (en) 2004-07-09
WO2004055916A2 (en) 2004-07-01
SG133402A1 (en) 2007-07-30
US6744088B1 (en) 2004-06-01
TW200410367A (en) 2004-06-16
CN100401546C (en) 2008-07-09
DE60308726D1 (en) 2006-11-09
KR100520926B1 (en) 2005-10-17
EP1570532B1 (en) 2006-09-27
US20040113136A1 (en) 2004-06-17
ATE341101T1 (en) 2006-10-15
DE60308726T2 (en) 2007-08-02
TWI236730B (en) 2005-07-21
EP1570532A2 (en) 2005-09-07
AU2003239249A1 (en) 2004-07-09

Similar Documents

Publication Publication Date Title
WO2004055916A3 (en) Phase change memory and manufacturing method therefor
WO2004055899A3 (en) Memory and access device and manufacturing method therefor
EP1274149A3 (en) Radio frequency circuit manufacturing method and radio frequency circuit
WO2005120164A3 (en) Three dimensional antennas formed using wet conductive materials and methods for production thereof
WO2002050848A3 (en) Planar inductor with segmented conductive plane
AU2002367356A1 (en) Method and apparatus to program a phase change memory
EP1187203A3 (en) A semiconductor device and method of manufacturing the same
TW200625604A (en) Phase change memory and fabricating method thereof
WO2007040958A3 (en) Electrostatic chuck assembly with dielectric material and/or cavity having varying thickness, profile and/or shape, method of use and apparatus incorporating same
WO2004040618A3 (en) Feedthrough design and method for a hermetically sealed microdevice
AU2002313948A1 (en) A wire structure, a thin film transistor substrate of using the wire structure and a method of manufacturing the same
WO2004055828A3 (en) Memory and access devices
AU2003285772A1 (en) Columnar structured material, electrode having columnar structured material, and production method therefor
WO2005064641A3 (en) Semiconductor device and method of fabricating the same
WO2002071456A3 (en) Magnetic layer processing
TW200625544A (en) Phase change memory device and method of manufacturing
AU2001284445A1 (en) Electrode material for electrochemical element and method for production thereof, and electrochemical element
EP1229597A3 (en) Process for manufacturing electrode foils
EP1280193A4 (en) Method of manufacturing integrated circuit, and substrate with integrated circuit formed by the method of manufacturing integrated circuit
WO2003058327A1 (en) Surface type optical modulator and its manufacturing method
TW429600B (en) Semiconductor device and production process thereof
ATE341799T1 (en) DATA CARRIER WITH TRANSPONDER COIL
WO2004047192A3 (en) Electro-active actuator
EP1408724A4 (en) Circuit formed substrate and method of manufacturing circuit formed substrate
WO2005018050A3 (en) Electromagnetic interference protection for radomes

Legal Events

Date Code Title Description
AK Designated states

Kind code of ref document: A2

Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NO NZ OM PH PL PT RO RU SD SE SG SK SL TJ TM TN TR TT TZ UA UG UZ VN YU ZA ZM ZW

AL Designated countries for regional patents

Kind code of ref document: A2

Designated state(s): GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG

121 Ep: the epo has been informed by wipo that ep was designated in this application
WWE Wipo information: entry into national phase

Ref document number: 2003734545

Country of ref document: EP

WWP Wipo information: published in national office

Ref document number: 2003734545

Country of ref document: EP

WWG Wipo information: grant in national office

Ref document number: 2003734545

Country of ref document: EP

NENP Non-entry into the national phase

Ref country code: JP

WWW Wipo information: withdrawn in national office

Country of ref document: JP