WO2004058453A1 - Polishing pad having multi-windows - Google Patents

Polishing pad having multi-windows Download PDF

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Publication number
WO2004058453A1
WO2004058453A1 PCT/KR2003/002831 KR0302831W WO2004058453A1 WO 2004058453 A1 WO2004058453 A1 WO 2004058453A1 KR 0302831 W KR0302831 W KR 0302831W WO 2004058453 A1 WO2004058453 A1 WO 2004058453A1
Authority
WO
WIPO (PCT)
Prior art keywords
polishing
polishing pad
pad
transparent windows
wafer
Prior art date
Application number
PCT/KR2003/002831
Other languages
French (fr)
Inventor
Jae-Seok Kim
Geon Kim
Sung-Min Kim
Ju-Yeol Lee
Jong-Myung Lee
Hyun-Woo Lee
In-Ha Park
Eu-Gene Song
Original Assignee
Skc Co., Ltd.
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Skc Co., Ltd. filed Critical Skc Co., Ltd.
Priority to AU2003285800A priority Critical patent/AU2003285800A1/en
Publication of WO2004058453A1 publication Critical patent/WO2004058453A1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/205—Lapping pads for working plane surfaces provided with a window for inspecting the surface of the work being lapped

Definitions

  • the present invention relates to a polishing pad for enabling the polished quantity of a wafer to be measured more rapidly and precisely in Chemical Mechanical Polishing (hereinafter, referred to as 'CMP'). More particularly, the polishing pad of the invention integrally has a polishing section and multi-windows made of the same material as the polishing section in order to enable a precise CMP process and achieve excellent structural endurance.
  • 'CMP' Chemical Mechanical Polishing
  • CMP is one of super precision/mirror face-polishing techniques in use for global planarization in a semiconductor device fabrication process.
  • abrasive in the form of slurry is injected between a polishing pad and a wafer to be polished (hereinafter, referred to as 'wafer') in order to chemically corrode the surface of the wafer and then to mechanically polish the corroded surface.
  • United States Patent No.5, 893, 796 which was devised to correctly find the polishing termination during such researches, discloses a method for detecting the state of wafer during polishing with a laser by inserting a transparent window in a polishing pad.
  • This apparatus is operated as follows: A laser interferometer 50 placed under a polishing pad 10 oscillates a laser beam 60, which is passed through a hole 30 (window portion) and reflects from a wafer 40 above the hole 30 to be detected by a laser sensor arranged in a platen 20. The intensity of the detected laser beam is compared with that of the' initially oscillated laser beam to calculate the thickness of the wafer 40. In this manner, measurement is performed to the thickness of the wafer 40 which rotates about its central axis 80 fixed to a polishing head 70 at every rotation of the platen 20 about its central axis 90 in order to detect the polishing termination based upon the thickness of a residual film.
  • this technique using the window portion formed in the polishing pad has a problem that slurry permeates through a joint around the window portion to weaken the endurance of the pad or to probably cause defects onto the wafer.
  • the transparent window and the polishing pad are abraded at quantities different from each other to bring thickness ununiformity to the pad. If the pad thickness is ununiform, the wafer is contacted with an uneven face, and thus it is impossible to obtain an evenly polished face in the wafer.
  • the present invention proposes to provide multi-windows or a plurality of windows in a CMP polishing pad so that polishing quantity can be adjusted more precisely than in a conventional pad of a single window, by which the measurement period of residual film thickness with a laser during rotation of a platen is remarkably reduced in order to enable the residual film thickness to be monitored with an improved precision and at a faster period over conventional techniques.
  • a polishing termination is controlled more precisely.
  • the invention can be applied to polishing termination measurement in future nm scale CMP processes.
  • the present invention integrally forms both the transparent windows in use for polishing termination detection and a polishing section with an equal material. This fundamentally overcomes the problem that abrasive in the form of slurry permeates into a region of the polishing pad in which the transparent window is inserted. Also, the pad is uniformly abraded owing to a conditioner to minimize the thickness variation between the transparent windows and the polishing section.
  • FIG. 1 illustrates a conventional CMP apparatus for detecting a polishing termination
  • FIG. 2 is a Scanning Electron Microscopy (SEM) photograph showing the surface of a polishing pad having holes and/or grooves according to the invention.
  • FIG. 3 illustrates a polishing pad having a plurality of transparent windows according to the invention.
  • a polishing pad of the invention has an integral structure of a polishing section and a plurality of transparent windows or multi-windows for passage of a laser beam, in which the polishing section and the multi-windows are made of the same material.
  • the polishing pad is made of a transparent material for substantially passing the laser beam through the same, which is at least one selected from a group including polyurethane, polyester, PVC, artificial leather and rubber.
  • the polishing pad may have grooves of a width of about 100 to 1 , 000 tm or micro-holes of a diameter of about 100 to 250 ⁇ m formed in the surface thereof so that abrasive in the form of slurry may efficiently flow between a wafer and the polishing pad. Such surface treatment is not carried out in predetermined regions of the polishing pad to be formed into transparent windows. Examples of the micro-holes and grooves formed in a polishing section of the polishing pad according to the invention are illustrated in a Scanning Electron Microscopy (SEM) image in FIG. 2.
  • SEM Scanning Electron Microscopy
  • 2 to 10 transparent windows 3 are preferably formed, with a size of about 2x5cm.
  • four transparent windows 3 are formed as shown in FIG.3, each transparent window being arranged at an interval of 90 degree from adjacent ones, so that the wafer can be observed four times through the four transparent windows at every single rotation of the polishing pad 1 on the CMP apparatus.
  • the invention can reduce the measuring period of a residual film of the wafer to a quarter of that of the conventional polishing pad, so that information can be transferred to a control unit of a CMP process at a rate 4 times faster than in the prior art. That is, owing to the four transparent windows, the CMP process of the invention can reduce the controlled quantity of polishing to a quarter of that of a conventional polishing process.
  • a wafer is polished for 6 ⁇ A at every one rotation thereof with a conventional polishing pad under ordinary conditions. Therefore, with the conventional polishing pad of the single transparent window, the CMP process can be monitored and controlled at the minimum scale of 60A.
  • the polishing pad of the four transparent windows of the invention the wafer can be monitored at every quarter rotation thereof to reduce the minimummonitoring scale to 15A, which is a quarter of 6 ⁇ A given by the conventional polishing pad, thereby enabling the precision of the CMP process to be regulated at the scale of 15A.
  • the plurality of transparent windows according to the invention can reduce the measurement period of the residual film at a rate inversely proportional to the number of the windows, thereby imparting more precision control to the process.
  • Equation 1 Variation in the measurement period of the residual film according to the plurality of transparent windows will be expressed as Equation 1 below: f T 1//1 T n .... Equation 1, wherein the number n of the transparent windows is inversely proportional to the period ⁇ of measuring the thickness of the residual film through the transparent windows, but proportional to the frequency f of observing the wafer through the transparent windows per a single rotation of a platen.
  • Equation 2 M/n .... Equation 2, wherein M is the quantity of the wafer polished at every one rotation of the polishing pad.
  • n increases in proportion to the number of the transparent windows in Equation 2 above, the minimum scale of polishing m indicating the quantity of measurement at every 1/n rotation is reduced, so that the polished quantity can be measured with a more precise scale according to the increase of n.
  • the polishing pad fabricated according to the invention is essentially transparent, with a polishing face formed integral with the transparent windows, so as to fundamentally prevent problems that abrasive or slurry leaks out between the polishing section 2 and the transparent windows
  • polishing face of the pad is made of a material same as that of the transparent windows, the entire thickness across the pad can be maintained uniform in the course of CMP.
  • predetermined regions on the polishing pad to be formed into the transparent windows are attached with protective covers having same configuration and size as those of the transparent windows, so that the predetermined window regions of the polishing pad are not processed in the course of micro-hole and/or groove processing
  • the polishing pad of the invention allows the CMP process to be performed more precisely than in the conventional pad with the single window additionally inserted therein as well as have an structural endurance superior to that of the conventional pad.
  • the polishing pad according to the invention has the following effects:
  • the polished quantity of the wafer can be measured/controlled more precisely than in the conventional pad of the single window so as to improve the precision of polishing termination measurement, thereby preventing over-polishing or under-polishing of the wafer.
  • polishing section and the transparent windows are made of the same material to minimize thickness variation in the polishing pad during the CMP process.
  • the polishing section and the transparent windows are provided integral to prevent abrasive from leaking into the pad.

Abstract

A polishing pad of the invention enables the polished quantity of a wafer to be monitored rapidly and precisely in Chemical Mechanical Polishing. A plurality of transparent windows are introduced enabling the polished quantity of the wafer to be controlled more rapidly and precisely than in a conventional single transparent window structure. The transparent windows and the remaining portion of the pad (e.g., a polishing section) are integrally made of the same material so that the polishing pad of the invention enables a precise CMP process and achieve excellent structural endurance superior to a conventional pad of a single transparent window inserted therein.

Description

POLISHING PAD HAVING MULTI-WINDOWS
BACKGROUND OF THE INVENTION
Field of the Invention
The present invention relates to a polishing pad for enabling the polished quantity of a wafer to be measured more rapidly and precisely in Chemical Mechanical Polishing (hereinafter, referred to as 'CMP'). More particularly, the polishing pad of the invention integrally has a polishing section and multi-windows made of the same material as the polishing section in order to enable a precise CMP process and achieve excellent structural endurance.
Description of the Related Art
CMP is one of super precision/mirror face-polishing techniques in use for global planarization in a semiconductor device fabrication process. In particular, during CMP abrasive in the form of slurry is injected between a polishing pad and a wafer to be polished (hereinafter, referred to as 'wafer') in order to chemically corrode the surface of the wafer and then to mechanically polish the corroded surface.
According to development of semiconductor technology, lines are gradually reduced with size up to sub-micrometer lines, which are introduced lately. In order to introduce the sub-micrometer lines, the surface of a wafer applied with lines is necessarily polished at a coarseness of nm scale. As a result, CMP is required to have a polishing-regulating ability in nm scale. In particular, a CMP process performed without a correct polishing termination leads to over-polishing to excessively polish an insulation layer or under-polishing to incompletely polish the insulation layer, thereby causing defects to a semiconductor device. In order to remove such process defects which are created during polishing, researches have been made actively to correctly find a polishing termination in the CMP field. United States Patent No.5, 893, 796, which was devised to correctly find the polishing termination during such researches, discloses a method for detecting the state of wafer during polishing with a laser by inserting a transparent window in a polishing pad.
A Mirra CMP apparatus available from Applied Material in
USA detects the polishing termination using United States Patent
No.5, 893, 796. This apparatus, as shown in FIG. 1, is operated as follows: A laser interferometer 50 placed under a polishing pad 10 oscillates a laser beam 60, which is passed through a hole 30 (window portion) and reflects from a wafer 40 above the hole 30 to be detected by a laser sensor arranged in a platen 20. The intensity of the detected laser beam is compared with that of the' initially oscillated laser beam to calculate the thickness of the wafer 40. In this manner, measurement is performed to the thickness of the wafer 40 which rotates about its central axis 80 fixed to a polishing head 70 at every rotation of the platen 20 about its central axis 90 in order to detect the polishing termination based upon the thickness of a residual film.
However, this technique using the window portion formed in the polishing pad has a problem that slurry permeates through a joint around the window portion to weaken the endurance of the pad or to probably cause defects onto the wafer. When polishing lasts for a long time period, the transparent window and the polishing pad are abraded at quantities different from each other to bring thickness ununiformity to the pad. If the pad thickness is ununiform, the wafer is contacted with an uneven face, and thus it is impossible to obtain an evenly polished face in the wafer.
SUMMARY OF THE INVENTION
The present invention proposes to provide multi-windows or a plurality of windows in a CMP polishing pad so that polishing quantity can be adjusted more precisely than in a conventional pad of a single window, by which the measurement period of residual film thickness with a laser during rotation of a platen is remarkably reduced in order to enable the residual film thickness to be monitored with an improved precision and at a faster period over conventional techniques. According to application of the pad enabling the residual film thickness to be measured at the faster period, a polishing termination is controlled more precisely. As a result, the invention can be applied to polishing termination measurement in future nm scale CMP processes. Further, in order to solve the foregoing problems of the conventional pad which are created owing to the transparent window inserted into the polishing pad, the present invention integrally forms both the transparent windows in use for polishing termination detection and a polishing section with an equal material. This fundamentally overcomes the problem that abrasive in the form of slurry permeates into a region of the polishing pad in which the transparent window is inserted. Also, the pad is uniformly abraded owing to a conditioner to minimize the thickness variation between the transparent windows and the polishing section.
BRIEF DESCRIPTION OF THE DRAWINGS
The above and other objects, features and other advantages of the present invention will be more clearly understood from the following detailed description taken in conjunction with the accompanying drawings, in which:
FIG. 1 illustrates a conventional CMP apparatus for detecting a polishing termination;
FIG. 2 is a Scanning Electron Microscopy (SEM) photograph showing the surface of a polishing pad having holes and/or grooves according to the invention; and
FIG. 3 illustrates a polishing pad having a plurality of transparent windows according to the invention.
DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENT
The following detailed description will present a preferred embodiment of the invention with reference to the accompanying drawings .
A polishing pad of the invention has an integral structure of a polishing section and a plurality of transparent windows or multi-windows for passage of a laser beam, in which the polishing section and the multi-windows are made of the same material.
The polishing pad is made of a transparent material for substantially passing the laser beam through the same, which is at least one selected from a group including polyurethane, polyester, PVC, artificial leather and rubber. The polishing pad may have grooves of a width of about 100 to 1 , 000 tm or micro-holes of a diameter of about 100 to 250^m formed in the surface thereof so that abrasive in the form of slurry may efficiently flow between a wafer and the polishing pad. Such surface treatment is not carried out in predetermined regions of the polishing pad to be formed into transparent windows. Examples of the micro-holes and grooves formed in a polishing section of the polishing pad according to the invention are illustrated in a Scanning Electron Microscopy (SEM) image in FIG. 2.
According to the invention, 2 to 10 transparent windows 3 are preferably formed, with a size of about 2x5cm. As an illustrative example thereof, four transparent windows 3 are formed as shown in FIG.3, each transparent window being arranged at an interval of 90 degree from adjacent ones, so that the wafer can be observed four times through the four transparent windows at every single rotation of the polishing pad 1 on the CMP apparatus. As a result, when compared with a conventional polishing pad provided with a single transparent window, the invention can reduce the measuring period of a residual film of the wafer to a quarter of that of the conventional polishing pad, so that information can be transferred to a control unit of a CMP process at a rate 4 times faster than in the prior art. That is, owing to the four transparent windows, the CMP process of the invention can reduce the controlled quantity of polishing to a quarter of that of a conventional polishing process.
Application of the polishing pad having the four transparent windows has the following effects: A wafer is polished for 6θA at every one rotation thereof with a conventional polishing pad under ordinary conditions. Therefore, with the conventional polishing pad of the single transparent window, the CMP process can be monitored and controlled at the minimum scale of 60A. However, with the polishing pad of the four transparent windows of the invention, the wafer can be monitored at every quarter rotation thereof to reduce the minimummonitoring scale to 15A, which is a quarter of 6θA given by the conventional polishing pad, thereby enabling the precision of the CMP process to be regulated at the scale of 15A. The plurality of transparent windows according to the invention can reduce the measurement period of the residual film at a rate inversely proportional to the number of the windows, thereby imparting more precision control to the process.
Variation in the measurement period of the residual film according to the plurality of transparent windows will be expressed as Equation 1 below: f T 1//1 T n .... Equation 1, wherein the number n of the transparent windows is inversely proportional to the period λ of measuring the thickness of the residual film through the transparent windows, but proportional to the frequency f of observing the wafer through the transparent windows per a single rotation of a platen.
In the case that n number of the transparent windows are applied, the polished quantity of the wafer is measured at every 1 /n rotation of the platen, and thus the minimum scale of polishing m will be expressed as Equation 2 below: m = M/n .... Equation 2, wherein M is the quantity of the wafer polished at every one rotation of the polishing pad.
Because n increases in proportion to the number of the transparent windows in Equation 2 above, the minimum scale of polishing m indicating the quantity of measurement at every 1/n rotation is reduced, so that the polished quantity can be measured with a more precise scale according to the increase of n. In a conventional pad having a single transparent window, since n is 1, the minimum scale of polishing m which can be observed at a single measurement is M. If n = 4 is given to a polishing pad having a plurality of transparent windows, measurement is performed four times at every rotation of the platen, so that the minimum scale of polishing m becomes M/4 which is 25% level of that of the conventional polishing pad, thereby to ensure a precision of four times of that of the conventional polishing pad.
Further, the polishing pad fabricated according to the invention is essentially transparent, with a polishing face formed integral with the transparent windows, so as to fundamentally prevent problems that abrasive or slurry leaks out between the polishing section 2 and the transparent windows
3 unlike the conventional polishing pad in which the transparent window is additionally inserted therein. This can enhance the endurance of the polishing pad of the invention. Since the polishing face of the pad is made of a material same as that of the transparent windows, the entire thickness across the pad can be maintained uniform in the course of CMP. Prior to forming the micro-holes and/or grooves in the pad to generate the transparent windows, predetermined regions on the polishing pad to be formed into the transparent windows are attached with protective covers having same configuration and size as those of the transparent windows, so that the predetermined window regions of the polishing pad are not processed in the course of micro-hole and/or groove processing
■ in order to form the transparent windows.
Since the plurality of transparent windows are formed integral with and made of the same material as the polishing section according to the invention, the polishing pad of the invention allows the CMP process to be performed more precisely than in the conventional pad with the single window additionally inserted therein as well as have an structural endurance superior to that of the conventional pad.
Therefore, the polishing pad according to the invention has the following effects:
(1) The polished quantity of the wafer can be measured/controlled more precisely than in the conventional pad of the single window so as to improve the precision of polishing termination measurement, thereby preventing over-polishing or under-polishing of the wafer.
(2) The polishing section and the transparent windows are made of the same material to minimize thickness variation in the polishing pad during the CMP process.
(3) The polishing section and the transparent windows are provided integral to prevent abrasive from leaking into the pad.

Claims

What is Claimed is :
1. A polishing pad comprising: a polishing section having a number of grooves and/or micro-holes formed in the surface thereof for allowing slurry to flow; and a plurality of transparent windows having a predetermined size in use for finding a polishing termination and without micro-holes or grooves formed therein, wherein the polishing section and the transparent windows are made of a same material.
2. The polishing pad according to claim 1, wherein the polishing pad has 2 to 10 transparent windows.
3. The polishing pad according to claim 1, wherein the polishing section and the transparent windows are made of at least one material selected from a group including polyurethane, polyester, PVC, artificial leather and rubber.
PCT/KR2003/002831 2002-12-28 2003-12-24 Polishing pad having multi-windows WO2004058453A1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003285800A AU2003285800A1 (en) 2002-12-28 2003-12-24 Polishing pad having multi-windows

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR10-2002-0085856 2002-12-28
KR20020085856 2002-12-28

Publications (1)

Publication Number Publication Date
WO2004058453A1 true WO2004058453A1 (en) 2004-07-15

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AU (1) AU2003285800A1 (en)
MY (1) MY137723A (en)
WO (1) WO2004058453A1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015216399A (en) * 2011-01-28 2015-12-03 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Collection of spectrum from large number of optical heads
US10071461B2 (en) 2014-04-03 2018-09-11 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
JP2000223451A (en) * 1999-02-01 2000-08-11 Nikon Corp Polishing state measuring method
KR20010015184A (en) * 1999-07-05 2001-02-26 가네꼬 히사시 Plane polishing apparatus
KR20020022375A (en) * 2000-09-20 2002-03-27 윤종용 End point detector of polishing in semiconductor processing

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5964643A (en) * 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
JP2000223451A (en) * 1999-02-01 2000-08-11 Nikon Corp Polishing state measuring method
KR20010015184A (en) * 1999-07-05 2001-02-26 가네꼬 히사시 Plane polishing apparatus
KR20020022375A (en) * 2000-09-20 2002-03-27 윤종용 End point detector of polishing in semiconductor processing

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2015216399A (en) * 2011-01-28 2015-12-03 アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ Collection of spectrum from large number of optical heads
US10071461B2 (en) 2014-04-03 2018-09-11 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same
US10252396B2 (en) 2014-04-03 2019-04-09 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same

Also Published As

Publication number Publication date
MY137723A (en) 2009-03-31
KR100577470B1 (en) 2006-05-10
KR20040060755A (en) 2004-07-06
AU2003285800A1 (en) 2004-07-22

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