WO2004061893A3 - Machine for uniform treatment of sample surfaces by multicharged ion projection - Google Patents

Machine for uniform treatment of sample surfaces by multicharged ion projection Download PDF

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Publication number
WO2004061893A3
WO2004061893A3 PCT/FR2003/003744 FR0303744W WO2004061893A3 WO 2004061893 A3 WO2004061893 A3 WO 2004061893A3 FR 0303744 W FR0303744 W FR 0303744W WO 2004061893 A3 WO2004061893 A3 WO 2004061893A3
Authority
WO
WIPO (PCT)
Prior art keywords
sample
ion beam
machine
uniform treatment
sample surfaces
Prior art date
Application number
PCT/FR2003/003744
Other languages
French (fr)
Other versions
WO2004061893A2 (en
Inventor
Gilles Borsoni
Bruno Simon
Original Assignee
Qplus
Gilles Borsoni
Bruno Simon
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Qplus, Gilles Borsoni, Bruno Simon filed Critical Qplus
Priority to AU2003300625A priority Critical patent/AU2003300625A1/en
Publication of WO2004061893A2 publication Critical patent/WO2004061893A2/en
Publication of WO2004061893A3 publication Critical patent/WO2004061893A3/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/317—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation
    • H01J37/3171—Electron-beam or ion-beam tubes for localised treatment of objects for changing properties of the objects or for applying thin layers thereon, e.g. for ion implantation for ion implantation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/30—Electron-beam or ion-beam tubes for localised treatment of objects
    • H01J37/305—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching
    • H01J37/3053—Electron-beam or ion-beam tubes for localised treatment of objects for casting, melting, evaporating or etching for evaporating or etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J2237/00—Discharge tubes exposing object to beam, e.g. for analysis treatment, etching, imaging
    • H01J2237/004—Charge control of objects or beams
    • H01J2237/0041—Neutralising arrangements
    • H01J2237/0044—Neutralising arrangements of objects being observed or treated

Abstract

The invention relates to a machine for uniform treatment of sample surfaces by projection of multicharged low kinetic energy ions. The inventive machine comprises a unit which produces ion beam, is electrically insulated from the remaining part thereof and polarisable, electorstatic deceleration means which decelerates ions approaching the surface of a treated sample, scanning means for scanning the surface of the sample by a ion beam in order to obtain a desired uniformity of the treatment, mechanical supporting means for keeping the sample in such position that the surface thereof can be treated by the ion beam, and vacuum producing means arranged on vacuum chambers in which the treated sample is arranged and the ion beam circulates.
PCT/FR2003/003744 2002-12-18 2003-12-16 Machine for uniform treatment of sample surfaces by multicharged ion projection WO2004061893A2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
AU2003300625A AU2003300625A1 (en) 2002-12-18 2003-12-16 Machine for uniform treatment of sample surfaces by multicharged ion projection

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
FR02/16124 2002-12-18
FR0216124A FR2849266A1 (en) 2002-12-18 2002-12-18 Ion beam nanometric/sub nanometric sample surface modifier having multistage ions with very low cinematic energy having ion beam/electrostatic decelerator and surface sweep sampler

Publications (2)

Publication Number Publication Date
WO2004061893A2 WO2004061893A2 (en) 2004-07-22
WO2004061893A3 true WO2004061893A3 (en) 2004-08-26

Family

ID=32406175

Family Applications (1)

Application Number Title Priority Date Filing Date
PCT/FR2003/003744 WO2004061893A2 (en) 2002-12-18 2003-12-16 Machine for uniform treatment of sample surfaces by multicharged ion projection

Country Status (3)

Country Link
AU (1) AU2003300625A1 (en)
FR (1) FR2849266A1 (en)
WO (1) WO2004061893A2 (en)

Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5683547A (en) * 1990-11-21 1997-11-04 Hitachi, Ltd. Processing method and apparatus using focused energy beam
US5714757A (en) * 1994-10-14 1998-02-03 Hitachi, Ltd. Surface analyzing method and its apparatus
FR2757881A1 (en) * 1996-12-31 1998-07-03 Univ Paris Curie PROCESS FOR TREATING A SURFACE OF A SEMICONDUCTOR, CORRESPONDING DEVICE AND ASSOCIATED SEMICONDUCTOR
FR2764110A1 (en) * 1997-05-28 1998-12-04 Univ Paris Curie DEVICE AND METHOD FOR ION ETCHING
EP0901148A2 (en) * 1997-09-08 1999-03-10 Eaton Corporation Biased and serrated extension tube for ion implanter electron shower
GB2336029A (en) * 1998-03-31 1999-10-06 Tadamoto Tamai Ion implantation, ion source and variable slit mechanism
JPH11354064A (en) * 1998-06-11 1999-12-24 Ulvac Corp Ion implanting apparatus
GB2345574A (en) * 1999-01-05 2000-07-12 Applied Materials Inc Apparatus and method for monitoring and tuning an ion beam in an ion implantation apparatus
FR2804246A1 (en) * 2000-01-21 2001-07-27 X Ion Ionic lithography for manufacture high density semiconductor memory, etc. includes passing ion beam through to produce micro=pattern on dielectric layer of multi=layer coating on substrate
FR2805925A1 (en) * 2000-03-01 2001-09-07 X Ion Method and equipment for controlling uniformity of treatment of substrate surface by action of particle beam, which includes measuring emitted photons, for use in microelectronics
US20020164421A1 (en) * 2000-12-06 2002-11-07 Chiang Tony P. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
FR2827422A1 (en) * 2001-07-12 2003-01-17 X Ion Multi-functional device for homogeneous treatment of substrates comprises energy controlled homogeneous beam of ions from source of ions coupled to single type ion extractor

Patent Citations (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5683547A (en) * 1990-11-21 1997-11-04 Hitachi, Ltd. Processing method and apparatus using focused energy beam
US5714757A (en) * 1994-10-14 1998-02-03 Hitachi, Ltd. Surface analyzing method and its apparatus
FR2757881A1 (en) * 1996-12-31 1998-07-03 Univ Paris Curie PROCESS FOR TREATING A SURFACE OF A SEMICONDUCTOR, CORRESPONDING DEVICE AND ASSOCIATED SEMICONDUCTOR
FR2764110A1 (en) * 1997-05-28 1998-12-04 Univ Paris Curie DEVICE AND METHOD FOR ION ETCHING
EP0901148A2 (en) * 1997-09-08 1999-03-10 Eaton Corporation Biased and serrated extension tube for ion implanter electron shower
GB2336029A (en) * 1998-03-31 1999-10-06 Tadamoto Tamai Ion implantation, ion source and variable slit mechanism
JPH11354064A (en) * 1998-06-11 1999-12-24 Ulvac Corp Ion implanting apparatus
GB2345574A (en) * 1999-01-05 2000-07-12 Applied Materials Inc Apparatus and method for monitoring and tuning an ion beam in an ion implantation apparatus
FR2804246A1 (en) * 2000-01-21 2001-07-27 X Ion Ionic lithography for manufacture high density semiconductor memory, etc. includes passing ion beam through to produce micro=pattern on dielectric layer of multi=layer coating on substrate
FR2805925A1 (en) * 2000-03-01 2001-09-07 X Ion Method and equipment for controlling uniformity of treatment of substrate surface by action of particle beam, which includes measuring emitted photons, for use in microelectronics
US20020164421A1 (en) * 2000-12-06 2002-11-07 Chiang Tony P. Sequential method for depositing a film by modulated ion-induced atomic layer deposition (MII-ALD)
FR2827422A1 (en) * 2001-07-12 2003-01-17 X Ion Multi-functional device for homogeneous treatment of substrates comprises energy controlled homogeneous beam of ions from source of ions coupled to single type ion extractor

Non-Patent Citations (3)

* Cited by examiner, † Cited by third party
Title
BORSONI G ET AL: "Ultrathin SiO2 layers formation by ultraslow single- and multicharged ions", SOLID STATE ELECTRONICS, ELSEVIER SCIENCE PUBLISHERS, BARKING, GB, vol. 46, no. 11, November 2002 (2002-11-01), pages 1855 - 1862, XP004388325, ISSN: 0038-1101 *
PATENT ABSTRACTS OF JAPAN vol. 2000, no. 03 30 March 2000 (2000-03-30) *
VALLIER L ET AL: "Use of cooled CCD cameras to control multicharged ion beam processes", PROCESS AND EQUIPMENT CONTROL IN MICROELECTRONIC MANUFACTURING II, EDINBURGH, UK, 30-31 MAY 2001, vol. 4405, 2001, Proceedings of the SPIE - The International Society for Optical Engineering, 2001, SPIE-Int. Soc. Opt. Eng, USA, pages 37 - 43, XP009016762, ISSN: 0277-786X *

Also Published As

Publication number Publication date
FR2849266A1 (en) 2004-06-25
AU2003300625A1 (en) 2004-07-29
WO2004061893A2 (en) 2004-07-22
AU2003300625A8 (en) 2004-07-29

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