WO2004064136A1 - A method of improving stability in low k barrier layers - Google Patents
A method of improving stability in low k barrier layers Download PDFInfo
- Publication number
- WO2004064136A1 WO2004064136A1 PCT/US2004/000374 US2004000374W WO2004064136A1 WO 2004064136 A1 WO2004064136 A1 WO 2004064136A1 US 2004000374 W US2004000374 W US 2004000374W WO 2004064136 A1 WO2004064136 A1 WO 2004064136A1
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- barrier layer
- oxygen
- layer
- silicon carbide
- deposited
- Prior art date
Links
- 238000000034 method Methods 0.000 title claims abstract description 87
- 230000004888 barrier function Effects 0.000 title claims abstract description 66
- 239000007789 gas Substances 0.000 claims abstract description 58
- 239000000758 substrate Substances 0.000 claims abstract description 48
- 238000000151 deposition Methods 0.000 claims abstract description 45
- 150000003961 organosilicon compounds Chemical class 0.000 claims abstract description 33
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 claims abstract description 24
- 238000001227 electron beam curing Methods 0.000 claims abstract description 5
- 239000001301 oxygen Substances 0.000 claims description 32
- 229910052760 oxygen Inorganic materials 0.000 claims description 32
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 claims description 31
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 21
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 21
- 150000001875 compounds Chemical class 0.000 claims description 21
- 239000001257 hydrogen Substances 0.000 claims description 21
- 229910052739 hydrogen Inorganic materials 0.000 claims description 21
- -1 nitrogen-containing compound Chemical class 0.000 claims description 20
- 238000009832 plasma treatment Methods 0.000 claims description 20
- 229910052710 silicon Inorganic materials 0.000 claims description 17
- 239000010703 silicon Substances 0.000 claims description 14
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 12
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- OIKHZBFJHONJJB-UHFFFAOYSA-N dimethyl(phenyl)silicon Chemical compound C[Si](C)C1=CC=CC=C1 OIKHZBFJHONJJB-UHFFFAOYSA-N 0.000 claims description 10
- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 claims description 9
- 229910052757 nitrogen Inorganic materials 0.000 claims description 9
- 150000001338 aliphatic hydrocarbons Chemical class 0.000 claims description 6
- 239000002019 doping agent Substances 0.000 claims description 6
- 239000011261 inert gas Substances 0.000 claims description 6
- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical compound [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 claims description 5
- 229910052698 phosphorus Inorganic materials 0.000 claims description 5
- 239000011574 phosphorus Substances 0.000 claims description 5
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims description 4
- 229910021529 ammonia Inorganic materials 0.000 claims description 4
- 229910052796 boron Inorganic materials 0.000 claims description 4
- JJQZDUKDJDQPMQ-UHFFFAOYSA-N dimethoxy(dimethyl)silane Chemical compound CO[Si](C)(C)OC JJQZDUKDJDQPMQ-UHFFFAOYSA-N 0.000 claims description 4
- OKHRRIGNGQFVEE-UHFFFAOYSA-N methyl(diphenyl)silicon Chemical compound C=1C=CC=CC=1[Si](C)C1=CC=CC=C1 OKHRRIGNGQFVEE-UHFFFAOYSA-N 0.000 claims description 4
- 229910001873 dinitrogen Inorganic materials 0.000 claims description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims 2
- 229910010271 silicon carbide Inorganic materials 0.000 abstract description 95
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 abstract description 87
- 239000003989 dielectric material Substances 0.000 abstract description 20
- 230000009977 dual effect Effects 0.000 abstract description 6
- 125000001997 phenyl group Chemical group [H]C1=C([H])C([H])=C(*)C([H])=C1[H] 0.000 abstract description 4
- 239000010410 layer Substances 0.000 description 145
- 239000000463 material Substances 0.000 description 83
- 230000008569 process Effects 0.000 description 43
- 238000010894 electron beam technology Methods 0.000 description 29
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical group [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 21
- 229910052802 copper Inorganic materials 0.000 description 21
- 239000010949 copper Substances 0.000 description 21
- 239000002243 precursor Substances 0.000 description 18
- 230000008021 deposition Effects 0.000 description 16
- 239000001307 helium Substances 0.000 description 14
- 229910052734 helium Inorganic materials 0.000 description 14
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 14
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 12
- 238000000137 annealing Methods 0.000 description 10
- 229920002120 photoresistant polymer Polymers 0.000 description 10
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 8
- 238000009792 diffusion process Methods 0.000 description 8
- 150000002894 organic compounds Chemical class 0.000 description 8
- 125000004122 cyclic group Chemical group 0.000 description 7
- 238000005137 deposition process Methods 0.000 description 7
- 229910003828 SiH3 Inorganic materials 0.000 description 6
- 239000004020 conductor Substances 0.000 description 6
- VDCSGNNYCFPWFK-UHFFFAOYSA-N diphenylsilane Chemical compound C=1C=CC=CC=1[SiH2]C1=CC=CC=C1 VDCSGNNYCFPWFK-UHFFFAOYSA-N 0.000 description 6
- 150000002431 hydrogen Chemical class 0.000 description 6
- 238000011065 in-situ storage Methods 0.000 description 6
- 239000011229 interlayer Substances 0.000 description 6
- 150000002500 ions Chemical class 0.000 description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical group O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 125000004432 carbon atom Chemical group C* 0.000 description 5
- 230000008859 change Effects 0.000 description 5
- 125000000524 functional group Chemical group 0.000 description 5
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 229910052786 argon Inorganic materials 0.000 description 4
- 150000002430 hydrocarbons Chemical class 0.000 description 4
- 229910052751 metal Inorganic materials 0.000 description 4
- 239000002184 metal Substances 0.000 description 4
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 4
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- OANQMIHEPFMBKR-UHFFFAOYSA-N [Si].C[SiH](C)C Chemical compound [Si].C[SiH](C)C OANQMIHEPFMBKR-UHFFFAOYSA-N 0.000 description 3
- DSHKUORNHVLIQJ-UHFFFAOYSA-N [Si].C[SiH](C1=CC=CC=C1)C Chemical compound [Si].C[SiH](C1=CC=CC=C1)C DSHKUORNHVLIQJ-UHFFFAOYSA-N 0.000 description 3
- 125000000217 alkyl group Chemical group 0.000 description 3
- UORVGPXVDQYIDP-UHFFFAOYSA-N borane Chemical compound B UORVGPXVDQYIDP-UHFFFAOYSA-N 0.000 description 3
- 238000005229 chemical vapour deposition Methods 0.000 description 3
- 239000000356 contaminant Substances 0.000 description 3
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- AQEFLFZSWDEAIP-UHFFFAOYSA-N di-tert-butyl ether Chemical compound CC(C)(C)OC(C)(C)C AQEFLFZSWDEAIP-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229930195733 hydrocarbon Natural products 0.000 description 3
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- 150000001282 organosilanes Chemical class 0.000 description 3
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- 229910052814 silicon oxide Inorganic materials 0.000 description 3
- 229910052724 xenon Inorganic materials 0.000 description 3
- FHNFHKCVQCLJFQ-UHFFFAOYSA-N xenon atom Chemical compound [Xe] FHNFHKCVQCLJFQ-UHFFFAOYSA-N 0.000 description 3
- MAOGYXKNTJIJKG-UHFFFAOYSA-N 2,2,4,4-tetramethyl-2,4-disilabicyclo[1.1.0]butane Chemical compound C[Si]1(C)C2C1[Si]2(C)C MAOGYXKNTJIJKG-UHFFFAOYSA-N 0.000 description 2
- WZJUBBHODHNQPW-UHFFFAOYSA-N 2,4,6,8-tetramethyl-1,3,5,7,2$l^{3},4$l^{3},6$l^{3},8$l^{3}-tetraoxatetrasilocane Chemical compound C[Si]1O[Si](C)O[Si](C)O[Si](C)O1 WZJUBBHODHNQPW-UHFFFAOYSA-N 0.000 description 2
- CQMDBLRKZWOZIW-UHFFFAOYSA-N 2-Methyl-2-phenyl-undecane Chemical compound CC(C)(C)CC(C)(C)C1=CC=CC=C1 CQMDBLRKZWOZIW-UHFFFAOYSA-N 0.000 description 2
- UROUUEDWXIQAAY-UHFFFAOYSA-N 2-[(2-methylpropan-2-yl)oxymethyl]furan Chemical compound CC(C)(C)OCC1=CC=CO1 UROUUEDWXIQAAY-UHFFFAOYSA-N 0.000 description 2
- PKXHXOTZMFCXSH-UHFFFAOYSA-N 3,3-dimethylbut-1-ene Chemical group CC(C)(C)C=C PKXHXOTZMFCXSH-UHFFFAOYSA-N 0.000 description 2
- KAKZBPTYRLMSJV-UHFFFAOYSA-N Butadiene Chemical compound C=CC=C KAKZBPTYRLMSJV-UHFFFAOYSA-N 0.000 description 2
- 239000004215 Carbon black (E152) Substances 0.000 description 2
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- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 2
- 101100107923 Vitis labrusca AMAT gene Proteins 0.000 description 2
- RCESRQNXSACEHH-UHFFFAOYSA-N [Si].C1(=CC=CC=C1)[SiH2]C1=CC=CC=C1 Chemical compound [Si].C1(=CC=CC=C1)[SiH2]C1=CC=CC=C1 RCESRQNXSACEHH-UHFFFAOYSA-N 0.000 description 2
- 150000007824 aliphatic compounds Chemical class 0.000 description 2
- 150000001343 alkyl silanes Chemical class 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 229910000085 borane Inorganic materials 0.000 description 2
- 150000001923 cyclic compounds Chemical class 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- FFUAGWLWBBFQJT-UHFFFAOYSA-N hexamethyldisilazane Chemical compound C[Si](C)(C)N[Si](C)(C)C FFUAGWLWBBFQJT-UHFFFAOYSA-N 0.000 description 2
- UQEAIHBTYFGYIE-UHFFFAOYSA-N hexamethyldisiloxane Chemical compound C[Si](C)(C)O[Si](C)(C)C UQEAIHBTYFGYIE-UHFFFAOYSA-N 0.000 description 2
- 125000004435 hydrogen atom Chemical group [H]* 0.000 description 2
- 229910052743 krypton Inorganic materials 0.000 description 2
- DNNSSWSSYDEUBZ-UHFFFAOYSA-N krypton atom Chemical compound [Kr] DNNSSWSSYDEUBZ-UHFFFAOYSA-N 0.000 description 2
- 125000005647 linker group Chemical group 0.000 description 2
- VNWKTOKETHGBQD-UHFFFAOYSA-N methane Chemical compound C VNWKTOKETHGBQD-UHFFFAOYSA-N 0.000 description 2
- 229910052754 neon Inorganic materials 0.000 description 2
- GKAOGPIIYCISHV-UHFFFAOYSA-N neon atom Chemical compound [Ne] GKAOGPIIYCISHV-UHFFFAOYSA-N 0.000 description 2
- HMMGMWAXVFQUOA-UHFFFAOYSA-N octamethylcyclotetrasiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O[Si](C)(C)O1 HMMGMWAXVFQUOA-UHFFFAOYSA-N 0.000 description 2
- 125000005375 organosiloxane group Chemical group 0.000 description 2
- 125000004430 oxygen atom Chemical group O* 0.000 description 2
- 238000000206 photolithography Methods 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000002230 thermal chemical vapour deposition Methods 0.000 description 2
- XOAJIYVOSJHEQB-UHFFFAOYSA-N trimethyl trimethoxysilyl silicate Chemical compound CO[Si](OC)(OC)O[Si](OC)(OC)OC XOAJIYVOSJHEQB-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000011800 void material Substances 0.000 description 2
- KWEKXPWNFQBJAY-UHFFFAOYSA-N (dimethyl-$l^{3}-silanyl)oxy-dimethylsilicon Chemical compound C[Si](C)O[Si](C)C KWEKXPWNFQBJAY-UHFFFAOYSA-N 0.000 description 1
- LZFDOBOWCCWDKN-UHFFFAOYSA-N 1,2,4-trimethyl-2,4-disilabicyclo[1.1.0]butane Chemical compound C[SiH]1C2[SiH](C)C12C LZFDOBOWCCWDKN-UHFFFAOYSA-N 0.000 description 1
- XJUUEEGXLKEEFV-UHFFFAOYSA-N 1,3-dimethyl-2,4-disilabicyclo[1.1.0]butane Chemical compound CC12C([SiH2]1)([SiH2]2)C XJUUEEGXLKEEFV-UHFFFAOYSA-N 0.000 description 1
- QHSJGVUXUKRCJF-UHFFFAOYSA-N 2,2,3,4,4-pentamethyl-2,4-disilabicyclo[1.1.0]butane Chemical compound C[Si]1(C)C2(C)C1[Si]2(C)C QHSJGVUXUKRCJF-UHFFFAOYSA-N 0.000 description 1
- WGGNJZRNHUJNEM-UHFFFAOYSA-N 2,2,4,4,6,6-hexamethyl-1,3,5,2,4,6-triazatrisilinane Chemical compound C[Si]1(C)N[Si](C)(C)N[Si](C)(C)N1 WGGNJZRNHUJNEM-UHFFFAOYSA-N 0.000 description 1
- QMMFVYPAHWMCMS-UHFFFAOYSA-N Dimethyl sulfide Chemical compound CSC QMMFVYPAHWMCMS-UHFFFAOYSA-N 0.000 description 1
- OTMSDBZUPAUEDD-UHFFFAOYSA-N Ethane Chemical compound CC OTMSDBZUPAUEDD-UHFFFAOYSA-N 0.000 description 1
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- 239000005977 Ethylene Substances 0.000 description 1
- PXGOKWXKJXAPGV-UHFFFAOYSA-N Fluorine Chemical compound FF PXGOKWXKJXAPGV-UHFFFAOYSA-N 0.000 description 1
- XYFCBTPGUUZFHI-UHFFFAOYSA-N Phosphine Chemical compound P XYFCBTPGUUZFHI-UHFFFAOYSA-N 0.000 description 1
- 229910007161 Si(CH3)3 Inorganic materials 0.000 description 1
- 229910008072 Si-N-Si Inorganic materials 0.000 description 1
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 229910002808 Si–O–Si Inorganic materials 0.000 description 1
- XMIJDTGORVPYLW-UHFFFAOYSA-N [SiH2] Chemical compound [SiH2] XMIJDTGORVPYLW-UHFFFAOYSA-N 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 150000001298 alcohols Chemical class 0.000 description 1
- 150000001336 alkenes Chemical class 0.000 description 1
- 125000003342 alkenyl group Chemical group 0.000 description 1
- 150000001345 alkine derivatives Chemical class 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000012080 ambient air Substances 0.000 description 1
- 125000003118 aryl group Chemical group 0.000 description 1
- UWAXDPWQPGZNIO-UHFFFAOYSA-N benzylsilane Chemical compound [SiH3]CC1=CC=CC=C1 UWAXDPWQPGZNIO-UHFFFAOYSA-N 0.000 description 1
- JSBOVJABZFDRGV-UHFFFAOYSA-N bis(dimethylsilyl)-dimethylsilane Chemical compound C[SiH](C)[Si](C)(C)[SiH](C)C JSBOVJABZFDRGV-UHFFFAOYSA-N 0.000 description 1
- QLANAUMHLMSYDV-UHFFFAOYSA-N bis(dimethylsilyl)-methylsilane Chemical compound C[SiH](C)[SiH](C)[SiH](C)C QLANAUMHLMSYDV-UHFFFAOYSA-N 0.000 description 1
- UORVGPXVDQYIDP-BJUDXGSMSA-N borane Chemical class [10BH3] UORVGPXVDQYIDP-BJUDXGSMSA-N 0.000 description 1
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- 230000000593 degrading effect Effects 0.000 description 1
- ZOCHARZZJNPSEU-UHFFFAOYSA-N diboron Chemical compound B#B ZOCHARZZJNPSEU-UHFFFAOYSA-N 0.000 description 1
- UCXUKTLCVSGCNR-UHFFFAOYSA-N diethylsilane Chemical compound CC[SiH2]CC UCXUKTLCVSGCNR-UHFFFAOYSA-N 0.000 description 1
- KZZFGAYUBYCTNX-UHFFFAOYSA-N diethylsilicon Chemical compound CC[Si]CC KZZFGAYUBYCTNX-UHFFFAOYSA-N 0.000 description 1
- UBHZUDXTHNMNLD-UHFFFAOYSA-N dimethylsilane Chemical compound C[SiH2]C UBHZUDXTHNMNLD-UHFFFAOYSA-N 0.000 description 1
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical compound [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 1
- 238000009826 distribution Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- KCWYOFZQRFCIIE-UHFFFAOYSA-N ethylsilane Chemical compound CC[SiH3] KCWYOFZQRFCIIE-UHFFFAOYSA-N 0.000 description 1
- 229910052731 fluorine Inorganic materials 0.000 description 1
- 239000011737 fluorine Substances 0.000 description 1
- HTDJPCNNEPUOOQ-UHFFFAOYSA-N hexamethylcyclotrisiloxane Chemical compound C[Si]1(C)O[Si](C)(C)O[Si](C)(C)O1 HTDJPCNNEPUOOQ-UHFFFAOYSA-N 0.000 description 1
- NEXSMEBSBIABKL-UHFFFAOYSA-N hexamethyldisilane Chemical compound C[Si](C)(C)[Si](C)(C)C NEXSMEBSBIABKL-UHFFFAOYSA-N 0.000 description 1
- 238000005984 hydrogenation reaction Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 229960004592 isopropanol Drugs 0.000 description 1
- 230000007246 mechanism Effects 0.000 description 1
- OFLMWACNYIOTNX-UHFFFAOYSA-N methyl(methylsilyloxy)silane Chemical compound C[SiH2]O[SiH2]C OFLMWACNYIOTNX-UHFFFAOYSA-N 0.000 description 1
- FWITZJRQRZACHD-UHFFFAOYSA-N methyl-[2-[methyl(silyloxy)silyl]propan-2-yl]-silyloxysilane Chemical compound C[SiH](O[SiH3])C(C)(C)[SiH](C)O[SiH3] FWITZJRQRZACHD-UHFFFAOYSA-N 0.000 description 1
- ANKWZKDLZJQPKN-UHFFFAOYSA-N methyl-[[methyl(silyloxy)silyl]methyl]-silyloxysilane Chemical compound [SiH3]O[SiH](C)C[SiH](C)O[SiH3] ANKWZKDLZJQPKN-UHFFFAOYSA-N 0.000 description 1
- GRVDJDISBSALJP-UHFFFAOYSA-N methyloxidanyl Chemical compound [O]C GRVDJDISBSALJP-UHFFFAOYSA-N 0.000 description 1
- UIUXUFNYAYAMOE-UHFFFAOYSA-N methylsilane Chemical compound [SiH3]C UIUXUFNYAYAMOE-UHFFFAOYSA-N 0.000 description 1
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- 125000000962 organic group Chemical group 0.000 description 1
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- 238000001020 plasma etching Methods 0.000 description 1
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- 230000000607 poisoning effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000002861 polymer material Substances 0.000 description 1
- 239000011148 porous material Substances 0.000 description 1
- DNAJDTIOMGISDS-UHFFFAOYSA-N prop-2-enylsilane Chemical compound [SiH3]CC=C DNAJDTIOMGISDS-UHFFFAOYSA-N 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- UIDUKLCLJMXFEO-UHFFFAOYSA-N propylsilane Chemical compound CCC[SiH3] UIDUKLCLJMXFEO-UHFFFAOYSA-N 0.000 description 1
- 239000011241 protective layer Substances 0.000 description 1
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- 239000000377 silicon dioxide Substances 0.000 description 1
- 235000012239 silicon dioxide Nutrition 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
- 239000002210 silicon-based material Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
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- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 125000000999 tert-butyl group Chemical group [H]C([H])([H])C(*)(C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
- H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
- H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/32—Carbides
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- H01L21/76802—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics
- H01L21/76807—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures
- H01L21/7681—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing by forming openings in dielectrics for dual damascene structures involving one or more buried masks
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- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76825—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by exposing the layer to particle radiation, e.g. ion implantation, irradiation with UV light or electrons etc.
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- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76826—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. by contacting the layer with gases, liquids or plasmas
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- H01L21/76822—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc.
- H01L21/76828—Modification of the material of dielectric layers, e.g. grading, after-treatment to improve the stability of the layers, to increase their density etc. thermal treatment
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- H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
- H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
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- H01L21/76835—Combinations of two or more different dielectric layers having a low dielectric constant
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- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
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- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/5329—Insulating materials
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- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
Definitions
- the invention relates to the fabrication of integrated circuits, more specifically to a process for depositing dielectric layers on a substrate, and to the structures formed by the dielectric layer.
- conductive materials having low resistivity and to use insulators having low dielectric constants (dielectric constants of less than 4.0) to also reduce the capacitive coupling between adjacent metal lines.
- insulators having low dielectric constants dielectric constants of less than 4.0
- One such low k material is silicon oxycarbide deposited by a chemical vapor deposition process and silicon carbide, both of which may be used as dielectric materials in fabricating damascene features.
- One conductive material having a low resistivity is copper and its alloys, which have become the materials of choice for sub-quarter-micron interconnect technology because copper has a lower resistivity than aluminum, (1.7 ⁇ -cm for copper compared to 3.1 ⁇ -cm for aluminum), a higher current and higher carrying capacity. These characteristics are important for supporting the higher current densities experienced at high levels of integration and increased device speed. Further, copper has a good thermal conductivity and is available in a highly pure state.
- One method for forming vertical and horizontal interconnects is by a damascene or dual damascene method.
- one or more dielectric materials such as the low k dielectric materials
- the vertical interconnects e.g., vias
- horizontal interconnects e.g., lines.
- Conductive materials such as copper containing materials, and other materials, such as barrier layer materials used to prevent diffusion of copper containing materials into the surrounding low k dielectric, are then inlaid into the etched pattern. Any excess copper containing materials and excess barrier layer material external to the etched pattern, such as on the field of the substrate, is then removed.
- low k dielectric materials are often porous and susceptible to interlayer diffusion of conductive materials, such as copper, which can result in the formation of short-circuits and device failure.
- a dielectric barrier layer material is often disposed between the copper material and surrounding the low k material to prevent interlayer diffusion.
- traditional dielectric barrier layer materials such as silicon nitride, often have high dielectric constants of 7 or greater. The combination of such a high k dielectric material with surrounding low k dielectric materials results in dielectric stacks having a higher than desired dielectric constant.
- aspects of the invention generally provide a method for depositing a barrier layer material having a low dielectric constant.
- the invention provides a method for processing a substrate including depositing a barrier layer on the substrate by introducing a processing gas comprising hydrogen and an oxygen- free organosilicon compound into a processing chamber, wherein the oxygen-free organosilicon compound has the formula SiH a (CH 3 ) b (C 6 H 5 ) c , wherein a is 0 to 3, b is 0 to 3, and c is 1 to 4, and reacting the processing gas to deposit the barrier layer, wherein the barrier layer has a dielectric constant less than 4 and depositing a first dielectric layer adjacent the barrier layer, wherein the dielectric layer comprises silicon, oxygen, and carbon and has a dielectric constant of about 3 or less.
- a method for processing a substrate including depositing a barrier layer on the substrate by introducing a processing gas comprising hydrogen and an oxygen-free organosilicon compound into a processing chamber, wherein the oxygen-free organosilicon compound has the formula SiH a (CH 3 ) b (C 6 H 5 )c, wherein a is 1 or 2, b is 1 or 2, and c is 1 or 2, and reacting the processing gas to deposit the barrier layer, wherein the barrier layer has a dielectric constant of less than 4, treating the deposited barrier layer to an e-beam curing technique, and depositing a dielectric layer adjacent the barrier layer, wherein the dielectric layer has a dielectric constant less than 4.
- Figure 1 is a cross sectional view showing a dual damascene structure comprising a low k barrier layer and a low k dielectric layer described herein;
- Figures 2A-2H are cross sectional views showing one embodiment of a dual damascene deposition sequence of the invention.
- Figure 3 is a schematic view of one embodiment of an electron beam apparatus
- Figure 4 is a partial schematic side view of one embodiment of the electron beam apparatus
- Figure 5 illustrates one embodiment of the electron beam apparatus with a feedback control circuit
- the silicon carbide materials may be deposited by reacting a processing gas comprising hydrogen and an oxygen-free organosilicon compound having the formula SiH a (CH 3 ) (C 6 H 5 ) c , wherein a is 0 to 3, b is 0 to 3, and c is 1 to 4, in a plasma to form a dielectric layer comprising carbon-silicon bonds and a dielectric constant less than 4, preferably less than about 3.5.
- a processing gas comprising hydrogen and an oxygen-free organosilicon compound having the formula SiH a (CH 3 ) (C 6 H 5 ) c , wherein a is 0 to 3, b is 0 to 3, and c is 1 to 4, in a plasma to form a dielectric layer comprising carbon-silicon bonds and a dielectric constant less than 4, preferably less than about 3.5.
- the silicon carbide materials may be deposited as barrier layers adjacent dielectric layers comprising silicon, oxygen, and carbon, which adjacent barrier layers have a dielectric layer of less than about 3.
- the oxygen-free organosilicon compounds used for depositing the silicon carbide materials generally include the structure:
- Suitable oxygen-free organosilicon compounds generally includes the formula SiH a (CH 3 )b(C 6 H 5 ) c , wherein a is 0 to 3, b is 0 to 3, and c is 1 to 4, and a+b+c is equal to 4.
- suitable precursors derived from this formula include diphenylsilane, dimethylphenylsilane, diphenylmethylsilane, phenylmethylsilane, and combinations thereof.
- b is 1 to 3 and c is 1 to 3.
- organosilicon compounds for deposition as barrier layer materials include organosilicon compounds having the formula SiH a (CH 3 ) b (C 6 H5)c, wherein a is 1 or 2, b is 1 or 2, and c is 1 or 2.
- preferred precursors include dimethylphenylsilane and diphenylmethylsilane.
- the processing gas also includes hydrogen gas.
- the hydrogen gas is generally added at a molar ratio of oxygen-free organosilicon compound to hydrogen gas of between about 1 :1 and about 10:1 , such as between about 1 :1 and about 6:1.
- Preferred deposition processes for oxygen-free organosilicon compounds and hydrogen gas has a molar ratio of oxygen-free organosilicon compound to hydrogen gas of between about 1 :1 and about 1.5:1.
- an inert gas such as a noble gas selected from the group of argon, helium, neon, xenon, or krypton, and combinations thereof, may be added to the processing gas to improve processing stability.
- Nitrogen gas (N 2 ) may also be added to the processing gas for depositing of the silicon carbide layer.
- Additional materials such as a second organosilicon compound, including siloxanes, or an organic compound, such as an aliphatic hydrocarbon, may also be present during the deposition process to modify or change desired film properties.
- the second oxygen-free organosilicon compounds optionally used herein preferably include the structure:
- R includes organic functional groups including alkyl, alkenyl, cyclohexenyl, and aryl groups, in addition to functional derivatives thereof.
- the organic precursors may have more than one R group attached to the silicon atom, and the invention contemplates the use of organosilicon precursors without Si-H bonds.
- Suitable second oxygen-free organosilicon compounds include oxygen- free aliphatic organosilicon compounds, oxygen-free cyclic organosilicon compounds, or combinations thereof, having at least one silicon-carbon bond.
- Cyclic organosilicon compounds typically have a ring comprising three or more silicon atoms.
- Aliphatic organosilicon compounds have linear or branched structures comprising one or more silicon atoms and one or more carbon atoms.
- Commercially available aliphatic organosilicon compounds include alkylsilanes.
- suitable second oxygen-free organosilicon compounds include one or more of the following compounds:
- TMS Trimethylsilane
- the processing gas may further include oxygen-containing organosilicon compounds to modify or change desired film properties by controlling the oxygen content of the deposited silicon carbide film.
- oxygen-containing organosilicon compounds include oxygen-containing aliphatic organosilicon compounds, oxygen-containing cyclic organosilicon compounds, or combinations thereof.
- Oxygen-containing aliphatic organosilicon compounds have linear or branched structures comprising one or more silicon atoms and one or more carbon atoms, and the structure includes silicon-oxygen bonds.
- Oxygen-containing cyclic organosilicon compounds typically have a ring comprising three or more silicon atoms and the ring may further comprise one or more oxygen atoms.
- Commercially available oxygen-containing cyclic organosilicon compounds include rings having alternating silicon and oxygen atoms with one or two alkyl groups bonded to each silicon atom.
- Preferred oxygen-containing organosilicon compounds are cyclic compounds.
- One class of oxygen-containing organosilicon compounds include compounds having Si-O-Si bonding groups, such as organosiloxane compounds. Precursors with siloxane bonds provide silicon carbide films with bonded oxygen that can reduce the dielectric constant of the film as well as reduce the current leakage of the film.
- Suitable oxygen-containing organosilicon compounds include, for example, one or more of the following compounds:
- DMDMOS Dimethyldimethoxysilane
- CH 3 -Si-(OCH 3 ) 2 1,3-dimethyldisiloxane
- CH 3 -SiH 2 -O-SiH 2 -CH 3 1,3-dimethyldisiloxane
- TMDSO 1 ,1 ,3,3-tetramethyldisiloxane
- HMDS Hexamethyldisiloxane
- HMDSO Hexamethoxydisiloxane
- TCTS 1,3,5,7-tetramethylcyclotetrasiloxane
- oxygen-containing and oxygen-free organosilicon precursors are used in the same processing gas, a molar ratio of oxygen-free organosilicon precursors to oxygen-containing organosilicon precursors between about 4:1 and about 1 :1 is generally used.
- Organic compounds such as aliphatic hydrocarbon compounds may also be used in the processing gas to increase the carbon content of the deposited silicon carbide materials.
- Suitable aliphatic hydrocarbon compounds include compounds having between one and about 20 adjacent carbon atoms.
- the hydrocarbon compounds can include adjacent carbon atoms that are bonded by any combination of single, double, and triple bonds.
- the organic compounds may include alkenes and alkynes having two to about 20 carbon atoms, such as ethylene, propylene, acetylene, and butadiene.
- suitable hydrocarbons include t-butylethylene, 1 ,1 ,3,3-tetramethylbutylbenzene, t- butylether, metyl-methacrylate (MMA), t-butylfurfurylether, and combinations thereof.
- Organic compounds containing functional groups including oxygen and/or nitrogen containing functional groups may also be used.
- alcohols including ethanol, methanol, propanol, and iso-propanol, may be used for depositing the silicon carbide material.
- the processing gas described herein may further include one or more meta-stable organic compounds.
- Meta-stable compounds are described herein as compounds having unstable functional groups that dissociate under applied processing conditions, such as by temperature applied during an annealing process.
- the meta-stable organic compounds form unstable components within the layer network.
- the unstable components may be removed from the deposited material using a post anneal treatment. The removal of the unstable component during the post anneal treatment forms a void within the network and reducing the lower dielectric constant of the deposited material.
- the meta-stable compound is also known as a "leaving group" because of the nature of the process whereby the meta- stable compound leaves the network to form one or more voids therein.
- a t-butyl functional group dissociated from the molecule at about 200°C to form ethylene (C 2 H ) by a beta hydrogenation mechanism and evolves from the substrate surface leaving behind a void in the deposited material.
- the meta-stable organic compounds may include t-butylethylene, 1 ,1 ,3,3- tetramethylbutylbenzene, t-butylether, metyl-methacrylate (MMA), and t- butylfurfurylether.
- the meta-stable compounds may also be in the form of aliphatic compounds described herein. It is believed that the meta-stable organic compounds further reduce the dielectric constant of the deposited film.
- t-butylether is used as the meta-stable organic precursor in the processing gases.
- Compounds having Si-N-Si bonding groups may be used in the processing gas for doping the deposited silicon carbide material with nitrogen.
- Compounds having bonded nitrogen, such as in the silazane compounds can improve the hardness of films as well as reduced the current leakage of the films.
- suitable silizane precursors includes aliphatic compounds, such as hexamethyldisilazane and divinyltetramethyldisilizane, as well as cyclic compounds, such as hexamethylcyclotrisilazane.
- Nitrogen addition to the silicon carbide material may also occur by optionally including a nitrogen- containing gas, for example, ammonia (NH 3 ), nitrogen (N 2 ), or combinations thereof, in the processing gas.
- the silicon carbide layer may also be doped with boron, phosphorus, or combinations thereof, to improve film properties.
- Doped silicon carbide generally includes less than about 15 atomic percent (atomic %) or less of any dopant including oxygen, nitrogen, boron, phosphorus, or combinations thereof.
- Dopants may be used in the processing gases at a ratio of dopant to organosilicon compound between about 1 :5 or greater, such as between about 1 :5 and about 1 :100.
- Phosphorus and/or boron doping of the low k silicon carbide layer may be performed by introducing phosphine (PH 3 ) or borane (BH 3 ), or borane derivative thereof, such as diborane (B 2 H 6 ), into the chamber during the deposition process. It is believed that dopants may reduce the dielectric constant of the deposited silicon carbide material.
- a silicon carbide barrier layer may be deposited in one embodiment by supplying an organosilicon compound, such as diphenylsilane, to a plasma processing chamber at a flow rate between about 10 milligrams/minute (mgm) and about 1500 mgm, supplying hydrogen gas at a flow rate between about 10 seem and about 2000 seem, maintaining a substrate temperature between about 0°C and about 500°C, maintaining a chamber pressure below about 500 Torr and an RF power of between about 0.03 watts/cm 2 and about 1500 watts/cm 2 .
- an organosilicon compound such as diphenylsilane
- the RF power can be provided at a high frequency, such as between 13 MHz and 14 MHz.
- the RF power can be provided continuously or in short duration cycles wherein the power is on at the stated levels for cycles less than about 200 Hz and the on cycles total between about 10% and about 30% of the total duty cycle.
- the processing gas may be introduced into the chamber by a gas distributor, the gas distributor may be positioned between about 200 mils and about 700 mils from the substrate surface. Additionally, the RF power may also be provided at low frequencies, such as 356 kHz, for depositing silicon carbide material.
- the gas distributor may be positioned between about 300 mils and about 600 mils during the deposition process.
- a suitable reactor for performing the processes described herein is a DxZTM chemical vapor deposition chamber commercially available from Applied Materials, Inc., Santa Clara, California.
- An example of a CVD reactor that may be used with the processes herein is described in U.S. Patent 5,000,113, entitled A Thermal CVD/PECVD Reactor and Use for Thermal Chemical Vapor Deposition of Silicon Dioxide and In-situ Multi-step Planarized Process, issued to I/Vang et al. and assigned to Applied Materials, Inc., the assignee of the present invention.
- the above process parameters provide a deposition rate for the silicon carbide layer in the range of about 500 A/min to about 20,000 A/min, such as a range between about 100 A/min and about 3000 A/min, when implemented on a 200 mm (millimeter) substrate in a deposition chamber available from Applied Materials, Inc., Santa Clara, California.
- An example of a preferred silicon carbide barrier layer deposition process includes introducing dimethylphenylsilane at about 1000 mg/min into the processing chamber, introducing hydrogen at about 500 seem into the processing chamber, introducing helium at about 1000 seem into the processing chamber, generating a plasma in the processing chamber by applying 200 watts of RF energy, maintaining the substrate temperature at about 350°C, maintaining the chamber pressure at about 6 Torr to deposit a silicon carbide layer.
- the spacing between the gas distributor and the substrate surface was 450 mil.
- a silicon carbide layer is deposited at about 1300 A/min by this process. The deposited silicon carbide layer exhibited a dielectric constant of about 3.4.
- the deposited low dielectric constant material may be annealed at a temperature between about 100°C and about 400°C for between about 1 minute and about 60 minutes, preferably at about 30 minutes, to reduce the moisture content and increase the solidity and hardness of the dielectric material.
- Annealing is preferably performed after the deposition of a subsequent material or layer that prevents shrinkage or deformation of the dielectric layer.
- the annealing process is typically formed using inert gases, such as argon and helium, but may also include hydrogen.
- the above described annealing process is preferably used for low dielectric constant materials deposited from processing gases without meta- stable compounds.
- a post deposition anneal is used to remove unstable components from the layer as well as reduce the moisture content of the film. Moisture content may arise due to exposure to ambient air or by-product formation, for example.
- the anneal process is preferably performed prior to the subsequent deposition of additional materials.
- an in-situ (i.e., inside the same chamber or same processing system without breaking vacuum) post treatment is performed.
- the material containing unstable components is subjected to a temperature between about 100°C and about 400°C for between about 2 seconds and about 10 minutes, preferably about 30 seconds.
- the annealing gas includes helium, hydrogen, or a combination thereof, which is flowed into the chamber at a rate between about 200 seem and about 10,000 seem, such as between about 500 and about 1 ,500 seem.
- the chamber pressure is maintained between about 2 Torr and about 10 Torr.
- a gas distribution head for providing the annealing gas to the process chamber is disposed between about 300 mils and about 600 mils from the substrate surface.
- the annealing process is preferably performed in one or more cycles using helium.
- the annealing process may be performed more than once, and variable amounts of helium and hydrogen may be used in multiple processing steps or annealing steps.
- the post anneal may be performed in substitution or prior to the anneal step previously described herein.
- a second in-situ anneal process may be performed on the materials deposited from processing gases containing meta-stable compounds following the initial anneal process to remove meta-stable components.
- the second anneal process that may be performed is the anneal process for deposited material that do not have meta-stable components as previously described herein.
- a RF power may be applied to the annealing gas between about 200 W and about 1 ,000 W, such as between about 200 W and about 800 W, at a frequency of about 13.56 MHz for a 200 mm substrate.
- the deposited silicon carbide layer may be plasma treated to remove contaminants or other wise clean the exposed surface of the silicon carbide layer prior to subsequent deposition of materials thereon.
- the plasma treatment may be performed in the same chamber used to deposit the silicon and carbon containing material.
- the plasma treatment is also believed to improve film stability by forming a protective layer of a higher density material than the untreated silicon carbide material.
- the higher density silicon carbide material is believed to be more resistive to chemical reactions, such as forming oxides when exposed to oxygen, than the untreated silicon carbide material.
- the plasma treatment generally includes providing an inert gas including helium, argon, neon, xenon, krypton, or combinations thereof, of which helium is preferred, and/or a reducing gas including hydrogen, ammonia, and combinations thereof, to a processing chamber.
- the inert gas or reducing gas is introduced into the processing chamber at a flow rate between about 500 seem and about 3000 seem, preferably between about 1000 seem and about 2500 seem of hydrogen, and generating a plasma in the processing chamber.
- the plasma may be generated using a power density ranging between about 0.03 W/cm 2 and about 3.2 W/cm 2 , which is a RF power level of between about 10 W and about 1000 W for a 200 mm substrate. Preferably, at a power level of about 100 watts for a silicon carbide material on a 200 mm substrate.
- the RF power can be provided at a high frequency such as between 13 MHz and 14 MHz.
- the RF power can be provided continuously or in short duration cycles wherein the power is on at the stated levels for cycles less than about 200 Hz and the on cycles total between about 10% and about 30% of the total duty cycle.
- the RF power may also be provided at low frequencies, such as 356 kHz, for plasma treating the depositing silicon carbide layer.
- the processing chamber is preferably maintained at a chamber pressure of between about 1 Torr and about 12 Torr, for example about 3 Torr.
- the substrate is preferably maintained at a temperature between about 200°C and about 450°C, preferably between about 290°C and about 400°C, during the plasma treatment.
- a substrate temperature of about the same temperature of the silicon carbide deposition process, for example about 290°C, may be used during the plasma treatment.
- the plasma treatment may be performed between about 10 seconds and about 100 seconds, with a plasma treatment between about 40 seconds and about 60 seconds preferably used.
- the processing gas may be introduced into the chamber by a gas distributor, the gas distributor may be positioned between about 200 mils and about 500 mils from the substrate surface.
- the gas distributor may be positioned between about 300 mils and about 600 mils during the plasma treatment.
- the hydrogen containing plasma treatment is believed to further reduce the dielectric constant of the low k dielectric layer by about 0.1 or less.
- the plasma treatment is believed to clean contaminants from the exposed surface of the silicon carbide material and may be used to stabilize the layer, such that it becomes less reactive with moisture and/or oxygen under atmospheric condition as well as the adhesion of layers formed thereover.
- the silicon carbide layer may also be treated by depositing a silicon carbide cap layer or silicon oxide cap layer prior to depositing a photoresist material.
- the cap layer may be deposited at a thickness between about 100 A and about 500A.
- the use of a cap layer is more fully described in co-pending U.S. Patent Application 09/977,008, entitled “Method Of Eliminating Photoresist Poisoning In Damascene Applications", filed on 10/11/2001 , which is incorporated herein by reference to the extent not inconsistent with the claimed aspects and disclosure described herein.
- the deposited silicon carbide material may be cured by an electronic beam (e-beam) technique.
- Silicon carbide material cured using an e-beam technique has shown an unexpected reduction in k value and an unexpected increase in hardness, not capable with conventional curing techniques.
- the e-beam treatment may be performed in situ within the same processing system, for example, transferred from one chamber to another without break in a vacuum.
- the following e-beam apparatus and process are illustrative, and should not be construed or interpreted as limiting the scope of the invention.
- FIG. 3 illustrates an electron beam apparatus 200 in accordance with an embodiment of the invention.
- the chamber 200 includes a vacuum chamber 220, a large-area cathode 222, a target plane 230 located in a field-free region 238, and a grid anode 226 positioned between the target plane 230 and the large-area cathode 222.
- the chamber 200 further includes a high voltage insulator 224, which isolates the grid anode 226 from the large-area cathode 222, a cathode cover insulator 228 located outside the vacuum chamber 220, a variable leak valve 232 for controlling the pressure inside the vacuum chamber 220, a variable high voltage power supply 229 connected to the large-area cathode 222, and a variable low voltage power supply 231 connected to the grid anode 226.
- a high voltage insulator 224 which isolates the grid anode 226 from the large-area cathode 222
- a cathode cover insulator 228 located outside the vacuum chamber 220
- a variable leak valve 232 for controlling the pressure inside the vacuum chamber 220
- a variable high voltage power supply 229 connected to the large-area cathode 222
- a variable low voltage power supply 231 connected to the grid anode 226.
- the substrate (not shown) to be exposed with the electron beam is placed on the target plane 230.
- the vacuum chamber 220 is pumped from atmospheric pressure to a pressure in the range of about 1 mTorr to about 200 mTorr.
- the exact pressure is controlled by the variable rate leak valve 232, which is capable of controlling pressure to about 0.1 mTorr.
- the electron beam is generally generated at a sufficiently high voltage, which is applied to the large-area cathode 222 by the high voltage power supply 229.
- the voltage may range from about -500 volts to about 30,000 volts or higher.
- the high voltage power supply 229 may be a Bertan Model #105-30R manufactured by Bertan of Hickville, N.Y., or a Spellman Model #SL30N-1200X 258 manufactured by Spellman High Voltage Electronics Corp., of Hauppauge, N.Y.
- the variable voltage power supply 231 applies a voltage to the grid anode 226 that is positive relative to the voltage applied to the large-area cathode 222. This voltage is used to control electron emission from the large-area cathode 222.
- the variable voltage power supply 231 may be an Acopian Model #150PT12 power supply available from Acopian of Easton, Pa.
- Electron emission may also be artificially initiated inside the vacuum chamber 220 by a high voltage spark gap.
- positive ions 342 shown in Figure 4 are attracted to the grid anode 226 by a slightly negative voltage, i.e., on the order of about 0 to about -200 volts, applied to the grid anode 226.
- These positive ions 342 pass into the accelerating field region 236, disposed between the large-area cathode 222 and the grid anode 226, and are accelerated towards the large-area cathode 222 as a result of the high voltage applied to the large-area cathode 222.
- these high-energy ions Upon striking the large-area cathode 222, these high-energy ions produce secondary electrons 344, which are accelerated back toward the grid anode 226. Some of these electrons, which travel generally perpendicular to the cathode surface, strike the grid anode 226, but many pass through the anode 226 and travel to the target plane 230.
- the grid anode 226 is preferably positioned at a distance less than the mean free path of the electrons emitted by the large-area cathode 222, e.g., the grid anode 226 is preferably positioned less than about 4 mm from the large-area cathode 222. Due to the short distance between the grid anode 226 and the large-area cathode 222, no, or minimal if any, ionization takes place in the accelerating field region 236 between the grid anode 226 and the large-area cathode 222.
- the electrons would create further positive ions in the accelerating field region, which would be attracted to the large- area cathode 222, creating even more electron emission.
- the discharge could easily avalanche into an unstable high voltage breakdown.
- the ions 342 created outside the grid anode 226 may be controlled (repelled or attracted) by the voltage applied to the grid anode 226.
- the electron emission may be continuously controlled by varying the voltage on the grid anode 226.
- the electron emission may be controlled by the variable leak valve 232, which is configured to raise or lower the number of molecules in the ionization region between the target plane 230 and the large-area cathode 222.
- the electron emission may be entirely turned off by applying a positive voltage to the grid anode 226, i.e., when the grid anode voltage exceeds the energy of any of the positive ion species created in the space between the grid anode 226 and target plane 230.
- Figure 5 illustrates the electron beam apparatus 200 with a feedback control circuit 400.
- the feedback control circuit 400 is configured to maintain a constant beam current independent of changes in the accelerating voltage.
- the feedback control circuit 400 includes an integrator 466.
- the beam current is sampled via a sense resistor 490, which is placed between the target plane 230 and the integrator 466.
- the beam current may also be sampled at the grid anode 226 as a portion of the beam is intercepted there.
- Two unity gain voltage followers 492 buffer the signal obtained across the sense resistor 490 and feed it to an amplifier 496 with a variable resistor 494.
- the output of this amplifier controls the voltage on the grid anode 226 such that an increase in beam current will cause a decrease in bias voltage on the grid anode 226 and a decrease in beam current from the large-area cathode 222.
- the gain of the amplifier 496 is adjusted, by means of the variable resistor 494, so that any change in beam current caused by a change in the accelerating voltage is counteracted by a change in bias voltage, thereby maintaining a constant beam current at the target.
- the output of the amplifier 496 may be connected to a voltage controlled variable rate leak valve 298 to counteract changes in beam current by raising or lowering the pressure in the ionization region 238.
- a wider range of beam current control may be provided by utilizing feedback signals to both the variable leak valve 298 and the grid anode 226.
- Other details of the electron beam apparatus 200 are described in U.S. Pat. No. 5,000,178, entitled "Large-Area Uniform Electron Source", issued to William R. Livesay, assigned to Electron Vision Corporation (which is currently owned by the assignee of the invention) and is incorporated by reference herein to the extent not inconsistent with the invention.
- the temperature at which the electron beam apparatus 200 operates ranges from about -200 degrees Celsius to about 600 degrees Celsius, e.g., about 400 degrees Celsius.
- An e-beam treatment of a silicon carbide layer may comprise the application or exposure to between about 1 micro coulombs per square centimeter ( ⁇ C/cm 2 ) and about 6,000 //C/cm 2 , for example, between about 1 ⁇ C/cm 2 and about 400 ⁇ C/cm 2 , and more preferably less than about 200 ⁇ C/cm 2 , such as about 70 ⁇ C/cm 2 , at energy ranges between about 0.5 kiloelectron volts (KeV) and about 30 KeV, for example between about 1 KeV and about 3 kiloelectron volts (KeV).
- the electron beams are generally generated at a pressure of about 1 mTorr to about 100 mTorr.
- the gas ambient in the electron beam chamber 220 may be an inert gas, including nitrogen, helium, argon, xenon, an oxidizing gas including oxygen, a reducing gas including hydrogen, a blend of hydrogen and nitrogen, ammonia, or any combination of these gases.
- the electron beam current ranges from about 1 mA to about 40 mA, and more preferably from about 5 mA to about 20 mA.
- the electron beam may cover an area from about 4 square inches to about 700 square inches.
- any e-beam device may be used, one exemplary device is the EBK chamber, available from Applied Materials, Inc., of Santa Clara California.
- the e-beam curing process is believed to improve the mechanical strength to the deposited film network and also reduce the k-value of the deposited silicon carbide material.
- the e-beam process adds energy to the deposited network and removes at least a portion of any cyclic organic groups disposed in any deposited material. The removal of the cyclic groups creates voids or pores within the film, thus lowering the k value.
- E-beam processing is more fully described in U.S. Patent application No. 10/146,394, entitled, "Method For Curing Low Dielectric Constant Film By Electron Beam", filed on November 22, 2002, and incorporated herein by reference to the extent not inconsistent with the claims aspects and disclosure herein.
- An example of an e-beam process is as follows. A substrate having a 3000A thick film is exposed to an e-beam at a chamber temperature about 400 degrees Celsius, an applied electron beam energy of about 3.5 KeV, and at an electron beam current of about 5 A, with an exposure dose of the electron beam of about 500 mC/cm 2 .
- Deposition and Post-treatment Example :
- a silicon carbide layer was deposited on a 200 mm substrate by supplying dimethylphenylsilane to a processing chamber at a flow rate of about 750 mg/min, supplying hydrogen gas at a flow rate of about 500 seem, supplying hydrogen gas at a flow rate of about 1500 seem, maintaining a substrate temperature of about 350°C, maintaining a chamber pressure of about 6 Torr, a spacing between the gas distributor and the substrate surface of about 450 mils, and a RF power of about 200 watts at a frequency of about 13.56 MHz. The process is performed for about 46 seconds for a 100 ⁇ A thick layer.
- the deposited silicon carbide material was observed to have a dielectric constant of about 3.5.
- the silicon carbide layer was capped with a hard mask layer if silicon carbide deposited by supplying trimethylsilane (TMS) to a processing chamber at a flow rate of about 320 seem and supplying helium at a flow rate of about 800 seem, maintaining a substrate temperature of about 350°C, maintaining a chamber pressure of about 8.7 Torr, a spacing between the gas distributor and the substrate surface of about 450 mils, and a RF power of about 500 watts at a frequency of about 13.56 MHz for about 3 seconds.
- TMS trimethylsilane
- the layer may be post-treated by using an electron beam apparatus, such as the electron beam apparatus 200 described above, at a chamber temperature about 400 degrees Celsius, an applied electron beam energy of about 3.5 KeV, and at an electron beam current of about 5 mA, with an exposure dose of the electron beam of about 500 mC/cm 2 .
- an electron beam apparatus such as the electron beam apparatus 200 described above, at a chamber temperature about 400 degrees Celsius, an applied electron beam energy of about 3.5 KeV, and at an electron beam current of about 5 mA, with an exposure dose of the electron beam of about 500 mC/cm 2 .
- the barrier layers are preferably deposited adjacent dielectric layers comprising silicon, oxygen, and carbon, a dielectric constant of less than about 3.
- the adjacent dielectric layers for use with the barrier layer material described herein have a carbon content of about 1 atomic percent excluding hydrogen atoms, preferably between about 5 and about 30 atomic percent excluding hydrogen atoms.
- the adjacent dielectric layer may be deposited by oxidizing an organosiliane compound in a plasma enhanced chemical vapor deposition technique.
- a suitable adjacent dielectric material may be deposited by reacting trimethylsilane and oxygen in a plasma enhanced chemical vapor deposition technique, with the plasma formed under conditions including a high frequency RF power density from about 0.16 W/cm 2 to about 0.48 W/cm 2 .
- Examples of methods and uses for the adjacent dielectric layers comprising silicon, oxygen, and carbon, having a dielectric constant of less than about 3 are more further described in United States Patent No. 6,054,379, issued May 25, 2000, United States Patent No. 6,287,990, issued September 11 , 2001 , and United States Patent No. 6,303,523, issued on October 16, 2001 , which are incorporated by reference herein to the extent not inconsistent with the disclosure and claimed aspects described herein.
- An example of a dielectric layer comprising silicon, oxygen, and carbon, having a dielectric constant of less than about 3 is Black DiamondTM dielectric materials commercially available from Applied Materials, Inc., of Santa Clara, California.
- a silicon carbide barrier layer 110 is generally deposited using the precursors according to the processes described herein on the substrate surface to eliminate inter-level diffusion between the substrate and subsequently deposited material.
- the substrate surface may comprise metal features 107 formed in a dielectric material 105.
- An etch stop (or second barrier layer) 114 of a silicon carbide material or oxidized organo silane layer is then deposited on the first dielectric layer 112.
- the etch stop 114 may include a silicon carbide material deposited from the organosilicon precursors described herein or an oxidized organosilane layer.
- the etch stop 114 may be a nitrogen containing silicon carbide material. Examples of nitrogen containing silicon carbide materials are more fully described in U.S. States Patent application No.
- the etch stop 114 is then pattern etched to define the openings of the interconnects or contacts/vias 116.
- a second dielectric layer 118 is then deposited over the patterned etch stop.
- a photoresist is then deposited and patterned by conventional means known in the art to define the contacts/via 116.
- a single etch process is then performed to define the contact/vias 116 down to the etch stop and to etch the unprotected dielectric exposed by the patterned etch stop to define the contacts/vias 116.
- One or more conductive materials 120 such as copper are then deposited to fill the formed contacts/vias 116.
- a preferred dual damascene structure fabricated in accordance with the invention including a silicon carbide barrier layer deposited by the processes described herein is sequentially depicted schematically in Figures 2A-2H, which are cross sectional views of a substrate having the steps of the invention formed thereon.
- a silicon carbide barrier layer 110 is deposited on the substrate surface from the processes described herein.
- the silicon carbide barrier layer 110 may be deposited by introducing dimethylphenylsilane at about 750 mg/min into the processing chamber, introducing hydrogen at about 500 seem into the processing chamber, introducing hydrogen at about 1500 seem into the processing chamber, generating a plasma in the processing chamber by applying 200 watts of RF energy, maintaining the substrate temperature at about 350°C, maintaining the chamber pressure at about 6 Torr to deposit a silicon carbide layer.
- the silicon carbide material is deposited at about 1300 A/min by this process.
- the deposited silicon carbide layer has a dielectric constant of about 3.5.
- the silicon carbide barrier layer 110 may be e-beam or plasma treated as described herein.
- the e-beam or plasma treatment may be performed in situ with the deposition of the silicon carbide material.
- Such an e-beam or plasma treatment is believed to clean contaminants from the exposed surface of the silicon carbide material and may be used to stabilize the layer, such that it becomes less reactive with moisture and/or oxygen under atmospheric condition as well as the adhesion of layers formed thereover.
- a capping layer (not shown) of a nitrogen free silicon carbide material may be deposited on the barrier layer 110.
- the nitrogen free silicon carbide capping layer may be deposited in situ on the silicon carbide layer 110.
- the capping layer is preferably deposited after any e- beam or plasma treatment of silicon carbide layer 110.
- An example of a plasma treatment process includes a processing gas of helium or a reducing gas, such as hydrogen, at a power level of between about 200 watts and about 800 watts for between about 5 seconds and about 60 seconds for a 200 millimeter substrate.
- the processing chamber is maintained at a pressure of about 8.7 Torr or less and at a substrate temperature of about the deposition temperature of the layer, for example about 350°C for dimethylphenylsilane, during the reactive clean process.
- An example of a e-beam process includes exposing silicon carbide barrier layer 110 at a chamber temperature about 400°C, an applied electron beam energy of about 3.5 KeV, and at an electron beam current of about 5 mA, with an exposure dose of the electron beam of about 500 mC/cm 2 .
- the first dielectric layer 112 of interlayer dielectric material is deposited on the first silicon carbide barrier layer 110 by oxidizing an organosilane or organosiloxane, such as trimethylsilane, to a thickness of about 5,000 to about 15,000 A, depending on the size of the structure to be fabricated.
- the first dielectric layer may also comprise other low k dielectric material such as a low k polymer material including paralyne or a low k spin-on glass such as un-doped silicon glass (USG) or fluorine-doped silicon glass (FSG).
- a low k dielectric material such as a low k polymer material including paralyne or a low k spin-on glass such as un-doped silicon glass (USG) or fluorine-doped silicon glass (FSG).
- the first dielectric layer 112 may then be treated by an e-beam technique or a plasma treatment process including helium or a reducing gas, such as hydrogen, as described herein for the silicon carbide layer.
- the processing chamber is maintained at a pressure and at a substrate temperature of about the deposition pressure and temperature of the first dielectric layer 112 during the reactive clean process.
- the low k etch stop 114 which may be a silicon carbide material, is then deposited on the first dielectric layer to a thickness of about 200 to about 1000 A.
- the low k etch stop 114 may be deposited from the same precursors and by the same process as the silicon carbide barrier layer 110.
- the low k etch stop 114 may be e-beam or plasma treated as described herein for the silicon carbide barrier layer 110.
- a capping layer (not shown) may also be deposited on the low k etch stop layer 114 as described for the silicon carbide barrier layer 100 described herein.
- the low k etch stop 114 is then pattern etched to define the contact/via openings 116 and to expose first dielectric layer 112 in the areas where the contacts/vias are to be formed as shown in Figure 2C.
- the low k etch stop 114 is pattern etched using conventional photolithography and etch processes using fluorine, carbon, and oxygen ions. While not shown, a nitrogen-free silicon carbide or silicon oxide cap layer between about 100 A and about 500 A thick may be deposited on the etch stop 114 prior to depositing further materials.
- a second dielectric layer 118 of silicon oxycarbide is deposited to a thickness of about 5,000 to about 15,000 A as shown in Figure 2D.
- the second dielectric layer 118 may be deposited as described for the first dielectric layer 112 as well as comprise the same materials used for the first dielectric layer 112.
- the second dielectric layer 118 may be plasma treated as the first dielectric layer 112. The e-beam or plasma treatment is believed to reduce the reactivity of the surface of the layer 118 to subsequently deposited materials.
- a nitrogen-free silicon carbide or silicon oxide cap layer between about 100 A and about 500 A thick may be deposited on second dielectric layer 118 prior to depositing additional materials, such as photoresist materials.
- a silicon carbide cap layer (not shown) may be deposited from the same precursors are by the same process as the silicon carbide barrier layer 110 on the second dielectric layer 118 prior to depositing additional materials, such as photoresist materials.
- a photoresist material 122 is then deposited on the second dielectric layer 118 (or cap layer) and patterned preferably using conventional photolithography processes to define the interconnect lines 120 as shown in Figure 2E.
- the photoresist material 122 comprises a material conventionally known in the art, preferably a high activation energy photoresist, such as UV-5, commercially available from Shipley Company Inc., of Mariborough, Massachusetts.
- the interconnects and contacts/vias are then etched using reactive ion etching or other anisotropic etching techniques to define the metallization structure (i.e., the interconnect and contact/via) as shown in Figure 2F. Any photoresist or other material used to pattern the etch stop 114 or the second dielectric layer 118 is removed using an oxygen strip or other suitable process.
- the metallization structure is then formed with a conductive material such as aluminum, copper, tungsten or combinations thereof.
- a conductive material such as aluminum, copper, tungsten or combinations thereof.
- the trend is to use copper to form the smaller features due to the low resistivity of copper (101 mW- cm compared to 3.1 mW-cm for aluminum).
- a suitable barrier layer 124 for copper such as tantalum or tantalum nitride, is first deposited conformally in the metallization pattern to prevent copper migration into the surrounding silicon and/or dielectric material.
- copper 126 is deposited using chemical vapor deposition, physical vapor deposition, electroplating, or combinations thereof to form the conductive structure.
- the surface is planarized using chemical mechanical polishing, as shown in Figure 2H.
- Organosilicon compounds described herein were deposited as barrier layers on substrate surface and analyzed.
- a silicon carbide film was deposited from a diphenylsilane compound and compared to a silicon carbide film from a conventional silicon carbide precursor, trimethylsilane.
- Both diphenylsilane and trimethylsilane precursors were deposited by introducing diphenylsilane or trimethylsilane at about 500 mg/min into the processing chamber, introducing helium at about 500 seem into the processing chamber, generating a plasma in the processing chamber by applying 100 watts of RF energy, maintaining the substrate temperature at about 290°C, maintaining the chamber pressure at about 3 Torr to deposit a silicon carbide layer.
- the heater spacing was about 450 mils from the substrate surface.
- the deposited films were examined and analyzed for dielectric constant and barrier layer diffusion.
- the diphenylsilane silicon carbide film had a measured dielectric constant of about 3.4 and the trimethylsilane silicon carbide film had a measured dielectric constant of about 4.3.
- the barrier layer properties were tested by a Bias Temperature test, which was performed by forming a damascene device using the above described silicon carbide films and subjecting the deposited films to a substrate temperature of about 275°C while measuring leakage current for a device. Leakage current increases with degrading barrier layer properties. When leakage current reaches about 10 "3 amps/cm 2 , the barrier layer is considered to have failed. When 50% of the devices failed under these processing conditions, the time was measured to indicate barrier effectiveness for the deposited films.
- the diphenylsilane silicon carbide had a leakage current of about 1e "9 amps/cm 2 at 1 mega volts/cm (MV/cm) and about 1e "8 amps/cm 2 at 2 MV/cm and had a 50% failure rate after about 7.9 hours while the trimethylsilane silicon carbide film had a leakage current of about 1e "9 amps/cm 2 at 1 MV/cm and about 1e "6 amps/cm 2 at 2 MV/cm and had a 50% failure rate after about 4.4 hours.
- dimethylphenylsilane was used to deposit a silicon carbide layer by introducing the dimethylphenylsilane at about 750 mg/min into the processing chamber, introducing hydrogen at about 500 seem into the processing chamber, introducing helium at about 1500 seem into the processing chamber, generating a plasma in the processing chamber by applying 200 watts of RF energy, maintaining the substrate temperature at about 350°C, maintaining the chamber pressure at about 6 Torr to deposit a silicon carbide layer.
- the heater spacing was about 450 mils from the substrate surface.
- the deposited films were examined and analyzed for dielectric constant and barrier layer diffusion.
- the dimethylphenylsilane silicon carbide film had a measured dielectric constant of about 3.5 compared to about 4.3 for trimethylsilane deposited silicon carbide films. Comparison of the films indicated that the dimethylphenylsilane silicon carbide had a leakage current of about 1e "9 amps/cm 2 at 1 MV/cm and about 3e "8 amps/cm 2 at 2 MV/cm and had a 50% failure rate after about 11 hours while the trimethylsilane silicon carbide film had a leakage current of about 1 e "9 amps/cm 2 at 1 MV/cm and about 1 e "6 amps/cm 2 at 2 MV/cm and had a 50% failure rate after about 4.4 hours.
- the dimethylphenylsilane silicon carbide film has a stable film stress at a level of about 1.2e "9 Dyne/cm 2 for a 3000A thick layer.
Abstract
Description
Claims
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US6821571B2 (en) * | 1999-06-18 | 2004-11-23 | Applied Materials Inc. | Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layers |
US6815373B2 (en) * | 2002-04-16 | 2004-11-09 | Applied Materials Inc. | Use of cyclic siloxanes for hardness improvement of low k dielectric films |
US20040101632A1 (en) * | 2002-11-22 | 2004-05-27 | Applied Materials, Inc. | Method for curing low dielectric constant film by electron beam |
US6998216B2 (en) * | 2002-09-24 | 2006-02-14 | Intel Corporation | Mechanically robust interconnect for low-k dielectric material using post treatment |
JP2004128195A (en) * | 2002-10-02 | 2004-04-22 | Oki Electric Ind Co Ltd | Method for manufacturing protective film |
US6991959B2 (en) * | 2002-10-10 | 2006-01-31 | Asm Japan K.K. | Method of manufacturing silicon carbide film |
JP4066332B2 (en) * | 2002-10-10 | 2008-03-26 | 日本エー・エス・エム株式会社 | Method for manufacturing silicon carbide film |
JP4109531B2 (en) * | 2002-10-25 | 2008-07-02 | 松下電器産業株式会社 | Semiconductor device and manufacturing method thereof |
US6913992B2 (en) | 2003-03-07 | 2005-07-05 | Applied Materials, Inc. | Method of modifying interlayer adhesion |
FR2858876B1 (en) * | 2003-08-12 | 2006-03-03 | St Microelectronics Sa | METHOD FOR FORMATION UNDER A THIN LAYER OF A FIRST MATERIAL OF PORTIONS OF ANOTHER MATERIAL AND / OR VACUUM ZONES |
US6972253B2 (en) * | 2003-09-09 | 2005-12-06 | Taiwan Semiconductor Manufacturing Company, Ltd. | Method for forming dielectric barrier layer in damascene structure |
US6967405B1 (en) | 2003-09-24 | 2005-11-22 | Yongsik Yu | Film for copper diffusion barrier |
US7420275B1 (en) | 2003-09-24 | 2008-09-02 | Novellus Systems, Inc. | Boron-doped SIC copper diffusion barrier films |
US20050277302A1 (en) * | 2004-05-28 | 2005-12-15 | Nguyen Son V | Advanced low dielectric constant barrier layers |
US7282438B1 (en) | 2004-06-15 | 2007-10-16 | Novellus Systems, Inc. | Low-k SiC copper diffusion barrier films |
US7129187B2 (en) * | 2004-07-14 | 2006-10-31 | Tokyo Electron Limited | Low-temperature plasma-enhanced chemical vapor deposition of silicon-nitrogen-containing films |
JP4435666B2 (en) * | 2004-11-09 | 2010-03-24 | 東京エレクトロン株式会社 | Plasma processing method, film forming method |
US20070218214A1 (en) * | 2006-03-14 | 2007-09-20 | Kuo-Chih Lai | Method of improving adhesion property of dielectric layer and interconnect process |
US7851384B2 (en) * | 2006-06-01 | 2010-12-14 | Applied Materials, Inc. | Method to mitigate impact of UV and E-beam exposure on semiconductor device film properties by use of a bilayer film |
WO2008091900A1 (en) * | 2007-01-26 | 2008-07-31 | Applied Materials, Inc. | Uv curing of pecvd-deposited sacrificial polymer films for air-gap ild |
WO2008094792A1 (en) * | 2007-01-29 | 2008-08-07 | Applied Materials, Inc. | Novel air gap integration scheme |
US7915166B1 (en) | 2007-02-22 | 2011-03-29 | Novellus Systems, Inc. | Diffusion barrier and etch stop films |
US8173537B1 (en) | 2007-03-29 | 2012-05-08 | Novellus Systems, Inc. | Methods for reducing UV and dielectric diffusion barrier interaction |
US7879683B2 (en) * | 2007-10-09 | 2011-02-01 | Applied Materials, Inc. | Methods and apparatus of creating airgap in dielectric layers for the reduction of RC delay |
US20090093100A1 (en) * | 2007-10-09 | 2009-04-09 | Li-Qun Xia | Method for forming an air gap in multilevel interconnect structure |
US8440981B2 (en) | 2007-10-15 | 2013-05-14 | Excellims Corporation | Compact pyroelectric sealed electron beam |
US7960704B2 (en) * | 2007-10-15 | 2011-06-14 | Excellims Corporation | Compact pyroelectric sealed electron beam |
JP4423379B2 (en) * | 2008-03-25 | 2010-03-03 | 合同会社先端配線材料研究所 | Copper wiring, semiconductor device, and method of forming copper wiring |
US8124522B1 (en) | 2008-04-11 | 2012-02-28 | Novellus Systems, Inc. | Reducing UV and dielectric diffusion barrier interaction through the modulation of optical properties |
US8247332B2 (en) * | 2009-12-04 | 2012-08-21 | Novellus Systems, Inc. | Hardmask materials |
US8741394B2 (en) | 2010-03-25 | 2014-06-03 | Novellus Systems, Inc. | In-situ deposition of film stacks |
US8524600B2 (en) | 2011-03-31 | 2013-09-03 | Applied Materials, Inc. | Post deposition treatments for CVD cobalt films |
US20130023129A1 (en) | 2011-07-20 | 2013-01-24 | Asm America, Inc. | Pressure transmitter for a semiconductor processing environment |
US10325773B2 (en) | 2012-06-12 | 2019-06-18 | Novellus Systems, Inc. | Conformal deposition of silicon carbide films |
US10211310B2 (en) | 2012-06-12 | 2019-02-19 | Novellus Systems, Inc. | Remote plasma based deposition of SiOC class of films |
US10832904B2 (en) | 2012-06-12 | 2020-11-10 | Lam Research Corporation | Remote plasma based deposition of oxygen doped silicon carbide films |
US9234276B2 (en) | 2013-05-31 | 2016-01-12 | Novellus Systems, Inc. | Method to obtain SiC class of films of desired composition and film properties |
US10714315B2 (en) | 2012-10-12 | 2020-07-14 | Asm Ip Holdings B.V. | Semiconductor reaction chamber showerhead |
US9337068B2 (en) | 2012-12-18 | 2016-05-10 | Lam Research Corporation | Oxygen-containing ceramic hard masks and associated wet-cleans |
US20160376700A1 (en) | 2013-02-01 | 2016-12-29 | Asm Ip Holding B.V. | System for treatment of deposition reactor |
CN104124197B (en) * | 2013-04-24 | 2017-09-01 | 中芯国际集成电路制造(上海)有限公司 | A kind of preparation method of semiconductor devices |
US10297442B2 (en) | 2013-05-31 | 2019-05-21 | Lam Research Corporation | Remote plasma based deposition of graded or multi-layered silicon carbide film |
US9190263B2 (en) * | 2013-08-22 | 2015-11-17 | Asm Ip Holding B.V. | Method for forming SiOCH film using organoaminosilane annealing |
US9371579B2 (en) | 2013-10-24 | 2016-06-21 | Lam Research Corporation | Ground state hydrogen radical sources for chemical vapor deposition of silicon-carbon-containing films |
US9558930B2 (en) | 2014-08-13 | 2017-01-31 | International Business Machines Corporation | Mixed lithography approach for e-beam and optical exposure using HSQ |
US10941490B2 (en) | 2014-10-07 | 2021-03-09 | Asm Ip Holding B.V. | Multiple temperature range susceptor, assembly, reactor and system including the susceptor, and methods of using the same |
US10276355B2 (en) | 2015-03-12 | 2019-04-30 | Asm Ip Holding B.V. | Multi-zone reactor, system including the reactor, and method of using the same |
US20160314964A1 (en) | 2015-04-21 | 2016-10-27 | Lam Research Corporation | Gap fill using carbon-based films |
US10458018B2 (en) | 2015-06-26 | 2019-10-29 | Asm Ip Holding B.V. | Structures including metal carbide material, devices including the structures, and methods of forming same |
US10211308B2 (en) | 2015-10-21 | 2019-02-19 | Asm Ip Holding B.V. | NbMC layers |
US11139308B2 (en) | 2015-12-29 | 2021-10-05 | Asm Ip Holding B.V. | Atomic layer deposition of III-V compounds to form V-NAND devices |
US10529554B2 (en) | 2016-02-19 | 2020-01-07 | Asm Ip Holding B.V. | Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches |
US10367080B2 (en) | 2016-05-02 | 2019-07-30 | Asm Ip Holding B.V. | Method of forming a germanium oxynitride film |
US10612137B2 (en) | 2016-07-08 | 2020-04-07 | Asm Ip Holdings B.V. | Organic reactants for atomic layer deposition |
US9859151B1 (en) | 2016-07-08 | 2018-01-02 | Asm Ip Holding B.V. | Selective film deposition method to form air gaps |
US9887082B1 (en) | 2016-07-28 | 2018-02-06 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
US9812320B1 (en) | 2016-07-28 | 2017-11-07 | Asm Ip Holding B.V. | Method and apparatus for filling a gap |
KR102532607B1 (en) | 2016-07-28 | 2023-05-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and method of operating the same |
US11532757B2 (en) | 2016-10-27 | 2022-12-20 | Asm Ip Holding B.V. | Deposition of charge trapping layers |
US10714350B2 (en) | 2016-11-01 | 2020-07-14 | ASM IP Holdings, B.V. | Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures |
KR102546317B1 (en) | 2016-11-15 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Gas supply unit and substrate processing apparatus including the same |
US10002787B2 (en) | 2016-11-23 | 2018-06-19 | Lam Research Corporation | Staircase encapsulation in 3D NAND fabrication |
KR20180068582A (en) | 2016-12-14 | 2018-06-22 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11447861B2 (en) | 2016-12-15 | 2022-09-20 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus and a method of forming a patterned structure |
US11581186B2 (en) | 2016-12-15 | 2023-02-14 | Asm Ip Holding B.V. | Sequential infiltration synthesis apparatus |
US9837270B1 (en) | 2016-12-16 | 2017-12-05 | Lam Research Corporation | Densification of silicon carbide film using remote plasma treatment |
US10269558B2 (en) | 2016-12-22 | 2019-04-23 | Asm Ip Holding B.V. | Method of forming a structure on a substrate |
US11390950B2 (en) | 2017-01-10 | 2022-07-19 | Asm Ip Holding B.V. | Reactor system and method to reduce residue buildup during a film deposition process |
US10468261B2 (en) | 2017-02-15 | 2019-11-05 | Asm Ip Holding B.V. | Methods for forming a metallic film on a substrate by cyclical deposition and related semiconductor device structures |
US10770286B2 (en) | 2017-05-08 | 2020-09-08 | Asm Ip Holdings B.V. | Methods for selectively forming a silicon nitride film on a substrate and related semiconductor device structures |
US11306395B2 (en) | 2017-06-28 | 2022-04-19 | Asm Ip Holding B.V. | Methods for depositing a transition metal nitride film on a substrate by atomic layer deposition and related deposition apparatus |
KR20190009245A (en) | 2017-07-18 | 2019-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods for forming a semiconductor device structure and related semiconductor device structures |
US11374112B2 (en) | 2017-07-19 | 2022-06-28 | Asm Ip Holding B.V. | Method for depositing a group IV semiconductor and related semiconductor device structures |
US10590535B2 (en) | 2017-07-26 | 2020-03-17 | Asm Ip Holdings B.V. | Chemical treatment, deposition and/or infiltration apparatus and method for using the same |
US10770336B2 (en) | 2017-08-08 | 2020-09-08 | Asm Ip Holding B.V. | Substrate lift mechanism and reactor including same |
US10692741B2 (en) | 2017-08-08 | 2020-06-23 | Asm Ip Holdings B.V. | Radiation shield |
US11769682B2 (en) | 2017-08-09 | 2023-09-26 | Asm Ip Holding B.V. | Storage apparatus for storing cassettes for substrates and processing apparatus equipped therewith |
US11830730B2 (en) | 2017-08-29 | 2023-11-28 | Asm Ip Holding B.V. | Layer forming method and apparatus |
KR102491945B1 (en) | 2017-08-30 | 2023-01-26 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11056344B2 (en) | 2017-08-30 | 2021-07-06 | Asm Ip Holding B.V. | Layer forming method |
US11295980B2 (en) | 2017-08-30 | 2022-04-05 | Asm Ip Holding B.V. | Methods for depositing a molybdenum metal film over a dielectric surface of a substrate by a cyclical deposition process and related semiconductor device structures |
US10658205B2 (en) | 2017-09-28 | 2020-05-19 | Asm Ip Holdings B.V. | Chemical dispensing apparatus and methods for dispensing a chemical to a reaction chamber |
US10403504B2 (en) | 2017-10-05 | 2019-09-03 | Asm Ip Holding B.V. | Method for selectively depositing a metallic film on a substrate |
JP7214724B2 (en) | 2017-11-27 | 2023-01-30 | エーエスエム アイピー ホールディング ビー.ブイ. | Storage device for storing wafer cassettes used in batch furnaces |
TWI791689B (en) | 2017-11-27 | 2023-02-11 | 荷蘭商Asm智慧財產控股私人有限公司 | Apparatus including a clean mini environment |
US10872771B2 (en) | 2018-01-16 | 2020-12-22 | Asm Ip Holding B. V. | Method for depositing a material film on a substrate within a reaction chamber by a cyclical deposition process and related device structures |
CN111630203A (en) | 2018-01-19 | 2020-09-04 | Asm Ip私人控股有限公司 | Method for depositing gap filling layer by plasma auxiliary deposition |
TW202325889A (en) | 2018-01-19 | 2023-07-01 | 荷蘭商Asm 智慧財產控股公司 | Deposition method |
US11081345B2 (en) | 2018-02-06 | 2021-08-03 | Asm Ip Holding B.V. | Method of post-deposition treatment for silicon oxide film |
JP7124098B2 (en) | 2018-02-14 | 2022-08-23 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
US10896820B2 (en) | 2018-02-14 | 2021-01-19 | Asm Ip Holding B.V. | Method for depositing a ruthenium-containing film on a substrate by a cyclical deposition process |
KR102636427B1 (en) | 2018-02-20 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing method and apparatus |
US10975470B2 (en) | 2018-02-23 | 2021-04-13 | Asm Ip Holding B.V. | Apparatus for detecting or monitoring for a chemical precursor in a high temperature environment |
US11473195B2 (en) | 2018-03-01 | 2022-10-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus and a method for processing a substrate |
US11629406B2 (en) | 2018-03-09 | 2023-04-18 | Asm Ip Holding B.V. | Semiconductor processing apparatus comprising one or more pyrometers for measuring a temperature of a substrate during transfer of the substrate |
US11114283B2 (en) | 2018-03-16 | 2021-09-07 | Asm Ip Holding B.V. | Reactor, system including the reactor, and methods of manufacturing and using same |
KR102646467B1 (en) | 2018-03-27 | 2024-03-11 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electrode on a substrate and a semiconductor device structure including an electrode |
US11230766B2 (en) | 2018-03-29 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR20190128558A (en) | 2018-05-08 | 2019-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Methods for depositing an oxide film on a substrate by a cyclical deposition process and related device structures |
KR102596988B1 (en) | 2018-05-28 | 2023-10-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of processing a substrate and a device manufactured by the same |
US11718913B2 (en) | 2018-06-04 | 2023-08-08 | Asm Ip Holding B.V. | Gas distribution system and reactor system including same |
US11270899B2 (en) | 2018-06-04 | 2022-03-08 | Asm Ip Holding B.V. | Wafer handling chamber with moisture reduction |
US11286562B2 (en) | 2018-06-08 | 2022-03-29 | Asm Ip Holding B.V. | Gas-phase chemical reactor and method of using same |
US10797133B2 (en) | 2018-06-21 | 2020-10-06 | Asm Ip Holding B.V. | Method for depositing a phosphorus doped silicon arsenide film and related semiconductor device structures |
KR102568797B1 (en) | 2018-06-21 | 2023-08-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing system |
CN112292478A (en) | 2018-06-27 | 2021-01-29 | Asm Ip私人控股有限公司 | Cyclic deposition methods for forming metal-containing materials and films and structures containing metal-containing materials |
WO2020003000A1 (en) | 2018-06-27 | 2020-01-02 | Asm Ip Holding B.V. | Cyclic deposition methods for forming metal-containing material and films and structures including the metal-containing material |
US10612136B2 (en) | 2018-06-29 | 2020-04-07 | ASM IP Holding, B.V. | Temperature-controlled flange and reactor system including same |
US10755922B2 (en) | 2018-07-03 | 2020-08-25 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10388513B1 (en) | 2018-07-03 | 2019-08-20 | Asm Ip Holding B.V. | Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted deposition |
US10840087B2 (en) | 2018-07-20 | 2020-11-17 | Lam Research Corporation | Remote plasma based deposition of boron nitride, boron carbide, and boron carbonitride films |
US11430674B2 (en) | 2018-08-22 | 2022-08-30 | Asm Ip Holding B.V. | Sensor array, apparatus for dispensing a vapor phase reactant to a reaction chamber and related methods |
KR20200030162A (en) | 2018-09-11 | 2020-03-20 | 에이에스엠 아이피 홀딩 비.브이. | Method for deposition of a thin film |
US11024523B2 (en) | 2018-09-11 | 2021-06-01 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
CN110970344A (en) | 2018-10-01 | 2020-04-07 | Asm Ip控股有限公司 | Substrate holding apparatus, system including the same, and method of using the same |
US11232963B2 (en) | 2018-10-03 | 2022-01-25 | Asm Ip Holding B.V. | Substrate processing apparatus and method |
KR102592699B1 (en) | 2018-10-08 | 2023-10-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and apparatuses for depositing thin film and processing the substrate including the same |
US10847365B2 (en) * | 2018-10-11 | 2020-11-24 | Asm Ip Holding B.V. | Method of forming conformal silicon carbide film by cyclic CVD |
KR102605121B1 (en) | 2018-10-19 | 2023-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
KR102546322B1 (en) | 2018-10-19 | 2023-06-21 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus and substrate processing method |
US11848199B2 (en) | 2018-10-19 | 2023-12-19 | Lam Research Corporation | Doped or undoped silicon carbide deposition and remote hydrogen plasma exposure for gapfill |
US11087997B2 (en) | 2018-10-31 | 2021-08-10 | Asm Ip Holding B.V. | Substrate processing apparatus for processing substrates |
KR20200051105A (en) | 2018-11-02 | 2020-05-13 | 에이에스엠 아이피 홀딩 비.브이. | Substrate support unit and substrate processing apparatus including the same |
US11572620B2 (en) | 2018-11-06 | 2023-02-07 | Asm Ip Holding B.V. | Methods for selectively depositing an amorphous silicon film on a substrate |
US10847366B2 (en) | 2018-11-16 | 2020-11-24 | Asm Ip Holding B.V. | Methods for depositing a transition metal chalcogenide film on a substrate by a cyclical deposition process |
US10818758B2 (en) | 2018-11-16 | 2020-10-27 | Asm Ip Holding B.V. | Methods for forming a metal silicate film on a substrate in a reaction chamber and related semiconductor device structures |
US11217444B2 (en) | 2018-11-30 | 2022-01-04 | Asm Ip Holding B.V. | Method for forming an ultraviolet radiation responsive metal oxide-containing film |
KR102636428B1 (en) | 2018-12-04 | 2024-02-13 | 에이에스엠 아이피 홀딩 비.브이. | A method for cleaning a substrate processing apparatus |
US11158513B2 (en) | 2018-12-13 | 2021-10-26 | Asm Ip Holding B.V. | Methods for forming a rhenium-containing film on a substrate by a cyclical deposition process and related semiconductor device structures |
JP2020096183A (en) | 2018-12-14 | 2020-06-18 | エーエスエム・アイピー・ホールディング・ベー・フェー | Method of forming device structure using selective deposition of gallium nitride, and system for the same |
TWI819180B (en) | 2019-01-17 | 2023-10-21 | 荷蘭商Asm 智慧財產控股公司 | Methods of forming a transition metal containing film on a substrate by a cyclical deposition process |
KR20200091543A (en) | 2019-01-22 | 2020-07-31 | 에이에스엠 아이피 홀딩 비.브이. | Semiconductor processing device |
CN111524788B (en) | 2019-02-01 | 2023-11-24 | Asm Ip私人控股有限公司 | Method for topologically selective film formation of silicon oxide |
KR102626263B1 (en) | 2019-02-20 | 2024-01-16 | 에이에스엠 아이피 홀딩 비.브이. | Cyclical deposition method including treatment step and apparatus for same |
TW202044325A (en) | 2019-02-20 | 2020-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of filling a recess formed within a surface of a substrate, semiconductor structure formed according to the method, and semiconductor processing apparatus |
TW202104632A (en) | 2019-02-20 | 2021-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Cyclical deposition method and apparatus for filling a recess formed within a substrate surface |
KR20200102357A (en) | 2019-02-20 | 2020-08-31 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for plug fill deposition in 3-d nand applications |
TW202100794A (en) | 2019-02-22 | 2021-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing apparatus and method for processing substrate |
US11742198B2 (en) | 2019-03-08 | 2023-08-29 | Asm Ip Holding B.V. | Structure including SiOCN layer and method of forming same |
KR20200108242A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Method for Selective Deposition of Silicon Nitride Layer and Structure Including Selectively-Deposited Silicon Nitride Layer |
KR20200108243A (en) | 2019-03-08 | 2020-09-17 | 에이에스엠 아이피 홀딩 비.브이. | Structure Including SiOC Layer and Method of Forming Same |
KR20200116033A (en) | 2019-03-28 | 2020-10-08 | 에이에스엠 아이피 홀딩 비.브이. | Door opener and substrate processing apparatus provided therewith |
KR20200116855A (en) | 2019-04-01 | 2020-10-13 | 에이에스엠 아이피 홀딩 비.브이. | Method of manufacturing semiconductor device |
KR20200123380A (en) | 2019-04-19 | 2020-10-29 | 에이에스엠 아이피 홀딩 비.브이. | Layer forming method and apparatus |
KR20200125453A (en) | 2019-04-24 | 2020-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system and method of using same |
KR20200130118A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Method for Reforming Amorphous Carbon Polymer Film |
KR20200130121A (en) | 2019-05-07 | 2020-11-18 | 에이에스엠 아이피 홀딩 비.브이. | Chemical source vessel with dip tube |
KR20200130652A (en) | 2019-05-10 | 2020-11-19 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing material onto a surface and structure formed according to the method |
JP2020188255A (en) | 2019-05-16 | 2020-11-19 | エーエスエム アイピー ホールディング ビー.ブイ. | Wafer boat handling device, vertical batch furnace, and method |
USD975665S1 (en) | 2019-05-17 | 2023-01-17 | Asm Ip Holding B.V. | Susceptor shaft |
USD947913S1 (en) | 2019-05-17 | 2022-04-05 | Asm Ip Holding B.V. | Susceptor shaft |
USD935572S1 (en) | 2019-05-24 | 2021-11-09 | Asm Ip Holding B.V. | Gas channel plate |
KR20200141003A (en) | 2019-06-06 | 2020-12-17 | 에이에스엠 아이피 홀딩 비.브이. | Gas-phase reactor system including a gas detector |
KR20200143254A (en) | 2019-06-11 | 2020-12-23 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming an electronic structure using an reforming gas, system for performing the method, and structure formed using the method |
USD944946S1 (en) | 2019-06-14 | 2022-03-01 | Asm Ip Holding B.V. | Shower plate |
USD931978S1 (en) | 2019-06-27 | 2021-09-28 | Asm Ip Holding B.V. | Showerhead vacuum transport |
KR20210005515A (en) | 2019-07-03 | 2021-01-14 | 에이에스엠 아이피 홀딩 비.브이. | Temperature control assembly for substrate processing apparatus and method of using same |
JP2021015791A (en) | 2019-07-09 | 2021-02-12 | エーエスエム アイピー ホールディング ビー.ブイ. | Plasma device and substrate processing method using coaxial waveguide |
CN112216646A (en) | 2019-07-10 | 2021-01-12 | Asm Ip私人控股有限公司 | Substrate supporting assembly and substrate processing device comprising same |
KR20210010307A (en) | 2019-07-16 | 2021-01-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210010816A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Radical assist ignition plasma system and method |
KR20210010820A (en) | 2019-07-17 | 2021-01-28 | 에이에스엠 아이피 홀딩 비.브이. | Methods of forming silicon germanium structures |
US11643724B2 (en) | 2019-07-18 | 2023-05-09 | Asm Ip Holding B.V. | Method of forming structures using a neutral beam |
CN112242296A (en) | 2019-07-19 | 2021-01-19 | Asm Ip私人控股有限公司 | Method of forming topologically controlled amorphous carbon polymer films |
TW202113936A (en) | 2019-07-29 | 2021-04-01 | 荷蘭商Asm Ip私人控股有限公司 | Methods for selective deposition utilizing n-type dopants and/or alternative dopants to achieve high dopant incorporation |
CN112309900A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112309899A (en) | 2019-07-30 | 2021-02-02 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11227782B2 (en) | 2019-07-31 | 2022-01-18 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587814B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
US11587815B2 (en) | 2019-07-31 | 2023-02-21 | Asm Ip Holding B.V. | Vertical batch furnace assembly |
CN112323048B (en) | 2019-08-05 | 2024-02-09 | Asm Ip私人控股有限公司 | Liquid level sensor for chemical source container |
USD965524S1 (en) | 2019-08-19 | 2022-10-04 | Asm Ip Holding B.V. | Susceptor support |
USD965044S1 (en) | 2019-08-19 | 2022-09-27 | Asm Ip Holding B.V. | Susceptor shaft |
JP2021031769A (en) | 2019-08-21 | 2021-03-01 | エーエスエム アイピー ホールディング ビー.ブイ. | Production apparatus of mixed gas of film deposition raw material and film deposition apparatus |
USD930782S1 (en) | 2019-08-22 | 2021-09-14 | Asm Ip Holding B.V. | Gas distributor |
USD979506S1 (en) | 2019-08-22 | 2023-02-28 | Asm Ip Holding B.V. | Insulator |
USD949319S1 (en) | 2019-08-22 | 2022-04-19 | Asm Ip Holding B.V. | Exhaust duct |
USD940837S1 (en) | 2019-08-22 | 2022-01-11 | Asm Ip Holding B.V. | Electrode |
KR20210024423A (en) | 2019-08-22 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for forming a structure with a hole |
KR20210024420A (en) | 2019-08-23 | 2021-03-05 | 에이에스엠 아이피 홀딩 비.브이. | Method for depositing silicon oxide film having improved quality by peald using bis(diethylamino)silane |
US11286558B2 (en) | 2019-08-23 | 2022-03-29 | Asm Ip Holding B.V. | Methods for depositing a molybdenum nitride film on a surface of a substrate by a cyclical deposition process and related semiconductor device structures including a molybdenum nitride film |
KR20210029090A (en) | 2019-09-04 | 2021-03-15 | 에이에스엠 아이피 홀딩 비.브이. | Methods for selective deposition using a sacrificial capping layer |
KR20210029663A (en) | 2019-09-05 | 2021-03-16 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11562901B2 (en) | 2019-09-25 | 2023-01-24 | Asm Ip Holding B.V. | Substrate processing method |
CN112593212B (en) | 2019-10-02 | 2023-12-22 | Asm Ip私人控股有限公司 | Method for forming topologically selective silicon oxide film by cyclic plasma enhanced deposition process |
TW202129060A (en) | 2019-10-08 | 2021-08-01 | 荷蘭商Asm Ip控股公司 | Substrate processing device, and substrate processing method |
KR20210043460A (en) | 2019-10-10 | 2021-04-21 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming a photoresist underlayer and structure including same |
KR20210045930A (en) | 2019-10-16 | 2021-04-27 | 에이에스엠 아이피 홀딩 비.브이. | Method of Topology-Selective Film Formation of Silicon Oxide |
US11637014B2 (en) | 2019-10-17 | 2023-04-25 | Asm Ip Holding B.V. | Methods for selective deposition of doped semiconductor material |
KR20210047808A (en) | 2019-10-21 | 2021-04-30 | 에이에스엠 아이피 홀딩 비.브이. | Apparatus and methods for selectively etching films |
US11646205B2 (en) | 2019-10-29 | 2023-05-09 | Asm Ip Holding B.V. | Methods of selectively forming n-type doped material on a surface, systems for selectively forming n-type doped material, and structures formed using same |
KR20210054983A (en) | 2019-11-05 | 2021-05-14 | 에이에스엠 아이피 홀딩 비.브이. | Structures with doped semiconductor layers and methods and systems for forming same |
US11501968B2 (en) | 2019-11-15 | 2022-11-15 | Asm Ip Holding B.V. | Method for providing a semiconductor device with silicon filled gaps |
KR20210062561A (en) | 2019-11-20 | 2021-05-31 | 에이에스엠 아이피 홀딩 비.브이. | Method of depositing carbon-containing material on a surface of a substrate, structure formed using the method, and system for forming the structure |
CN112951697A (en) | 2019-11-26 | 2021-06-11 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
US11450529B2 (en) | 2019-11-26 | 2022-09-20 | Asm Ip Holding B.V. | Methods for selectively forming a target film on a substrate comprising a first dielectric surface and a second metallic surface |
CN112885692A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
CN112885693A (en) | 2019-11-29 | 2021-06-01 | Asm Ip私人控股有限公司 | Substrate processing apparatus |
JP2021090042A (en) | 2019-12-02 | 2021-06-10 | エーエスエム アイピー ホールディング ビー.ブイ. | Substrate processing apparatus and substrate processing method |
KR20210070898A (en) | 2019-12-04 | 2021-06-15 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
US11885013B2 (en) | 2019-12-17 | 2024-01-30 | Asm Ip Holding B.V. | Method of forming vanadium nitride layer and structure including the vanadium nitride layer |
KR20210080214A (en) | 2019-12-19 | 2021-06-30 | 에이에스엠 아이피 홀딩 비.브이. | Methods for filling a gap feature on a substrate and related semiconductor structures |
KR20210095050A (en) | 2020-01-20 | 2021-07-30 | 에이에스엠 아이피 홀딩 비.브이. | Method of forming thin film and method of modifying surface of thin film |
TW202130846A (en) | 2020-02-03 | 2021-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming structures including a vanadium or indium layer |
TW202146882A (en) | 2020-02-04 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method of verifying an article, apparatus for verifying an article, and system for verifying a reaction chamber |
US11776846B2 (en) | 2020-02-07 | 2023-10-03 | Asm Ip Holding B.V. | Methods for depositing gap filling fluids and related systems and devices |
TW202146715A (en) | 2020-02-17 | 2021-12-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for growing phosphorous-doped silicon layer and system of the same |
KR20210116240A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | Substrate handling device with adjustable joints |
KR20210116249A (en) | 2020-03-11 | 2021-09-27 | 에이에스엠 아이피 홀딩 비.브이. | lockout tagout assembly and system and method of using same |
KR20210117157A (en) | 2020-03-12 | 2021-09-28 | 에이에스엠 아이피 홀딩 비.브이. | Method for Fabricating Layer Structure Having Target Topological Profile |
KR20210124042A (en) | 2020-04-02 | 2021-10-14 | 에이에스엠 아이피 홀딩 비.브이. | Thin film forming method |
TW202146689A (en) | 2020-04-03 | 2021-12-16 | 荷蘭商Asm Ip控股公司 | Method for forming barrier layer and method for manufacturing semiconductor device |
TW202145344A (en) | 2020-04-08 | 2021-12-01 | 荷蘭商Asm Ip私人控股有限公司 | Apparatus and methods for selectively etching silcon oxide films |
US11821078B2 (en) | 2020-04-15 | 2023-11-21 | Asm Ip Holding B.V. | Method for forming precoat film and method for forming silicon-containing film |
KR20210132605A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Vertical batch furnace assembly comprising a cooling gas supply |
CN113555279A (en) | 2020-04-24 | 2021-10-26 | Asm Ip私人控股有限公司 | Method of forming vanadium nitride-containing layers and structures including the same |
KR20210132600A (en) | 2020-04-24 | 2021-11-04 | 에이에스엠 아이피 홀딩 비.브이. | Methods and systems for depositing a layer comprising vanadium, nitrogen, and a further element |
KR20210134226A (en) | 2020-04-29 | 2021-11-09 | 에이에스엠 아이피 홀딩 비.브이. | Solid source precursor vessel |
KR20210134869A (en) | 2020-05-01 | 2021-11-11 | 에이에스엠 아이피 홀딩 비.브이. | Fast FOUP swapping with a FOUP handler |
KR20210141379A (en) | 2020-05-13 | 2021-11-23 | 에이에스엠 아이피 홀딩 비.브이. | Laser alignment fixture for a reactor system |
KR20210143653A (en) | 2020-05-19 | 2021-11-29 | 에이에스엠 아이피 홀딩 비.브이. | Substrate processing apparatus |
KR20210145078A (en) | 2020-05-21 | 2021-12-01 | 에이에스엠 아이피 홀딩 비.브이. | Structures including multiple carbon layers and methods of forming and using same |
TW202201602A (en) | 2020-05-29 | 2022-01-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing device |
TW202218133A (en) | 2020-06-24 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming a layer provided with silicon |
TW202217953A (en) | 2020-06-30 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Substrate processing method |
KR20220010438A (en) | 2020-07-17 | 2022-01-25 | 에이에스엠 아이피 홀딩 비.브이. | Structures and methods for use in photolithography |
TW202204662A (en) | 2020-07-20 | 2022-02-01 | 荷蘭商Asm Ip私人控股有限公司 | Method and system for depositing molybdenum layers |
TW202212623A (en) | 2020-08-26 | 2022-04-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of forming metal silicon oxide layer and metal silicon oxynitride layer, semiconductor structure, and system |
USD990534S1 (en) | 2020-09-11 | 2023-06-27 | Asm Ip Holding B.V. | Weighted lift pin |
USD1012873S1 (en) | 2020-09-24 | 2024-01-30 | Asm Ip Holding B.V. | Electrode for semiconductor processing apparatus |
TW202229613A (en) | 2020-10-14 | 2022-08-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing material on stepped structure |
TW202217037A (en) | 2020-10-22 | 2022-05-01 | 荷蘭商Asm Ip私人控股有限公司 | Method of depositing vanadium metal, structure, device and a deposition assembly |
TW202223136A (en) | 2020-10-28 | 2022-06-16 | 荷蘭商Asm Ip私人控股有限公司 | Method for forming layer on substrate, and semiconductor processing system |
KR20220076343A (en) | 2020-11-30 | 2022-06-08 | 에이에스엠 아이피 홀딩 비.브이. | an injector configured for arrangement within a reaction chamber of a substrate processing apparatus |
US11946137B2 (en) | 2020-12-16 | 2024-04-02 | Asm Ip Holding B.V. | Runout and wobble measurement fixtures |
TW202231903A (en) | 2020-12-22 | 2022-08-16 | 荷蘭商Asm Ip私人控股有限公司 | Transition metal deposition method, transition metal layer, and deposition assembly for depositing transition metal on substrate |
USD1023959S1 (en) | 2021-05-11 | 2024-04-23 | Asm Ip Holding B.V. | Electrode for substrate processing apparatus |
USD980813S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas flow control plate for substrate processing apparatus |
USD980814S1 (en) | 2021-05-11 | 2023-03-14 | Asm Ip Holding B.V. | Gas distributor for substrate processing apparatus |
USD981973S1 (en) | 2021-05-11 | 2023-03-28 | Asm Ip Holding B.V. | Reactor wall for substrate processing apparatus |
USD990441S1 (en) | 2021-09-07 | 2023-06-27 | Asm Ip Holding B.V. | Gas flow control plate |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4126759A1 (en) * | 1991-08-13 | 1993-02-18 | Siemens Ag | Thin, silicon-contg. organic layers prodn. - by irradiation of organo-silane(s)-alkoxy:silane(s) or -siloxane(s) with pulsed laser light of specified wavelength, pulse length, frequency and energy |
EP0935283A2 (en) * | 1998-02-05 | 1999-08-11 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
EP1122770A2 (en) * | 2000-02-01 | 2001-08-08 | JSR Corporation | Silica-based insulating film and its manufacture |
US6365527B1 (en) * | 2000-10-06 | 2002-04-02 | United Microelectronics Corp. | Method for depositing silicon carbide in semiconductor devices |
US20020155386A1 (en) * | 2001-04-20 | 2002-10-24 | Applied Materials, Inc. | Fluorine-containing layers for damascene structures |
Family Cites Families (88)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
GB1147014A (en) | 1967-01-27 | 1969-04-02 | Westinghouse Electric Corp | Improvements in diffusion masking |
US4262631A (en) * | 1979-10-01 | 1981-04-21 | Kubacki Ronald M | Thin film deposition apparatus using an RF glow discharge |
JPS59128281A (en) * | 1982-12-29 | 1984-07-24 | 信越化学工業株式会社 | Manufacture of silicon carbide coated matter |
JPH07111957B2 (en) * | 1984-03-28 | 1995-11-29 | 圭弘 浜川 | Semiconductor manufacturing method |
US4759947A (en) * | 1984-10-08 | 1988-07-26 | Canon Kabushiki Kaisha | Method for forming deposition film using Si compound and active species from carbon and halogen compound |
US4951601A (en) | 1986-12-19 | 1990-08-28 | Applied Materials, Inc. | Multi-chamber integrated process system |
US4872947A (en) | 1986-12-19 | 1989-10-10 | Applied Materials, Inc. | CVD of silicon oxide using TEOS decomposition and in-situ planarization process |
US4895734A (en) | 1987-03-31 | 1990-01-23 | Hitachi Chemical Company, Ltd. | Process for forming insulating film used in thin film electroluminescent device |
US4894352A (en) * | 1988-10-26 | 1990-01-16 | Texas Instruments Inc. | Deposition of silicon-containing films using organosilicon compounds and nitrogen trifluoride |
US5003178A (en) * | 1988-11-14 | 1991-03-26 | Electron Vision Corporation | Large-area uniform electron source |
US5011706A (en) | 1989-04-12 | 1991-04-30 | Dow Corning Corporation | Method of forming coatings containing amorphous silicon carbide |
JPH03105974A (en) | 1989-09-19 | 1991-05-02 | Kobe Steel Ltd | Manufacture of schottky diode by synthesizing polycrystalline diamond thin film |
EP0449117A3 (en) * | 1990-03-23 | 1992-05-06 | Matsushita Electric Industrial Co., Ltd. | Organic polymer and preparation and use thereof |
US5242530A (en) | 1991-08-05 | 1993-09-07 | International Business Machines Corporation | Pulsed gas plasma-enhanced chemical vapor deposition of silicon |
US5238866A (en) * | 1991-09-11 | 1993-08-24 | GmbH & Co. Ingenieurburo Berlin Biotronik Mess- und Therapiegerate | Plasma enhanced chemical vapor deposition process for producing an amorphous semiconductive surface coating |
US5472829A (en) * | 1991-12-30 | 1995-12-05 | Sony Corporation | Method of forming a resist pattern by using an anti-reflective layer |
US5472827A (en) * | 1991-12-30 | 1995-12-05 | Sony Corporation | Method of forming a resist pattern using an anti-reflective layer |
DE69221152T2 (en) | 1992-05-15 | 1998-02-19 | Shinetsu Quartz Prod | VERTICAL HEAT TREATMENT DEVICE AND HEAT INSULATION MATERIAL |
US5298597A (en) | 1992-09-18 | 1994-03-29 | Industrial Technology Research Institute | Aqueous preparation of polyamide with catalyst mixture |
US5360491A (en) | 1993-04-07 | 1994-11-01 | The United States Of America As Represented By The United States Department Of Energy | β-silicon carbide protective coating and method for fabricating same |
US5465680A (en) | 1993-07-01 | 1995-11-14 | Dow Corning Corporation | Method of forming crystalline silicon carbide coatings |
US5468978A (en) | 1993-07-07 | 1995-11-21 | Dowben; Peter A. | Forming B1-x Cx semiconductor devices by chemical vapor deposition |
US5433786A (en) * | 1993-08-27 | 1995-07-18 | The Dow Chemical Company | Apparatus for plasma enhanced chemical vapor deposition comprising shower head electrode with magnet disposed therein |
JP2899600B2 (en) * | 1994-01-25 | 1999-06-02 | キヤノン販売 株式会社 | Film formation method |
JPH07245332A (en) * | 1994-03-04 | 1995-09-19 | Hitachi Ltd | Apparatus and method for manufacturing semiconductor device and semiconductor device |
US5565084A (en) * | 1994-10-11 | 1996-10-15 | Qnix Computer Co., Ltd. | Electropolishing methods for etching substrate in self alignment |
US5818071A (en) * | 1995-02-02 | 1998-10-06 | Dow Corning Corporation | Silicon carbide metal diffusion barrier layer |
US5710067A (en) * | 1995-06-07 | 1998-01-20 | Advanced Micro Devices, Inc. | Silicon oxime film |
US5623160A (en) * | 1995-09-14 | 1997-04-22 | Liberkowski; Janusz B. | Signal-routing or interconnect substrate, structure and apparatus |
US5789776A (en) * | 1995-09-22 | 1998-08-04 | Nvx Corporation | Single poly memory cell and array |
US5638251A (en) * | 1995-10-03 | 1997-06-10 | Advanced Refractory Technologies, Inc. | Capacitive thin films using diamond-like nanocomposite materials |
US5741626A (en) * | 1996-04-15 | 1998-04-21 | Motorola, Inc. | Method for forming a dielectric tantalum nitride layer as an anti-reflective coating (ARC) |
JP3597307B2 (en) | 1996-05-30 | 2004-12-08 | オリンパス株式会社 | Head positioning control device for optical disk drive |
US5780163A (en) * | 1996-06-05 | 1998-07-14 | Dow Corning Corporation | Multilayer coating for microelectronic devices |
US5869396A (en) * | 1996-07-15 | 1999-02-09 | Chartered Semiconductor Manufacturing Ltd. | Method for forming a polycide gate electrode |
US5989998A (en) * | 1996-08-29 | 1999-11-23 | Matsushita Electric Industrial Co., Ltd. | Method of forming interlayer insulating film |
US5711987A (en) * | 1996-10-04 | 1998-01-27 | Dow Corning Corporation | Electronic coatings |
US5776235A (en) * | 1996-10-04 | 1998-07-07 | Dow Corning Corporation | Thick opaque ceramic coatings |
US5730792A (en) * | 1996-10-04 | 1998-03-24 | Dow Corning Corporation | Opaque ceramic coatings |
US5855681A (en) * | 1996-11-18 | 1999-01-05 | Applied Materials, Inc. | Ultra high throughput wafer vacuum processing system |
US5789316A (en) * | 1997-03-10 | 1998-08-04 | Vanguard International Semiconductor Corporation | Self-aligned method for forming a narrow via |
US6080526A (en) * | 1997-03-24 | 2000-06-27 | Alliedsignal Inc. | Integration of low-k polymers into interlevel dielectrics using controlled electron-beam radiation |
US5817579A (en) * | 1997-04-09 | 1998-10-06 | Vanguard International Semiconductor Corporation | Two step plasma etch method for forming self aligned contact |
US5926740A (en) * | 1997-10-27 | 1999-07-20 | Micron Technology, Inc. | Graded anti-reflective coating for IC lithography |
KR19990030660A (en) * | 1997-10-02 | 1999-05-06 | 윤종용 | Method of forming interlayer insulating film of semiconductor device using electron beam |
US6051321A (en) * | 1997-10-24 | 2000-04-18 | Quester Technology, Inc. | Low dielectric constant materials and method |
US6291334B1 (en) * | 1997-12-19 | 2001-09-18 | Applied Materials, Inc. | Etch stop layer for dual damascene process |
US6107192A (en) * | 1997-12-30 | 2000-08-22 | Applied Materials, Inc. | Reactive preclean prior to metallization for sub-quarter micron application |
US6140226A (en) * | 1998-01-16 | 2000-10-31 | International Business Machines Corporation | Dual damascene processing for semiconductor chip interconnects |
US6383955B1 (en) * | 1998-02-05 | 2002-05-07 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
US6432846B1 (en) * | 1999-02-02 | 2002-08-13 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
US6514880B2 (en) * | 1998-02-05 | 2003-02-04 | Asm Japan K.K. | Siloxan polymer film on semiconductor substrate and method for forming same |
US6413583B1 (en) * | 1998-02-11 | 2002-07-02 | Applied Materials, Inc. | Formation of a liquid-like silica layer by reaction of an organosilicon compound and a hydroxyl forming compound |
US6627532B1 (en) * | 1998-02-11 | 2003-09-30 | Applied Materials, Inc. | Method of decreasing the K value in SiOC layer deposited by chemical vapor deposition |
US6287990B1 (en) * | 1998-02-11 | 2001-09-11 | Applied Materials, Inc. | CVD plasma assisted low dielectric constant films |
US6303523B2 (en) * | 1998-02-11 | 2001-10-16 | Applied Materials, Inc. | Plasma processes for depositing low dielectric constant films |
US6340435B1 (en) * | 1998-02-11 | 2002-01-22 | Applied Materials, Inc. | Integrated low K dielectrics and etch stops |
US6660656B2 (en) * | 1998-02-11 | 2003-12-09 | Applied Materials Inc. | Plasma processes for depositing low dielectric constant films |
US6054379A (en) | 1998-02-11 | 2000-04-25 | Applied Materials, Inc. | Method of depositing a low k dielectric with organo silane |
JP3305251B2 (en) * | 1998-02-26 | 2002-07-22 | 松下電器産業株式会社 | Method of forming wiring structure |
US6068884A (en) * | 1998-04-28 | 2000-05-30 | Silcon Valley Group Thermal Systems, Llc | Method of making low κ dielectric inorganic/organic hybrid films |
US6159871A (en) * | 1998-05-29 | 2000-12-12 | Dow Corning Corporation | Method for producing hydrogenated silicon oxycarbide films having low dielectric constant |
US6060132A (en) * | 1998-06-15 | 2000-05-09 | Siemens Aktiengesellschaft | High density plasma CVD process for making dielectric anti-reflective coatings |
US6147009A (en) * | 1998-06-29 | 2000-11-14 | International Business Machines Corporation | Hydrogenated oxidized silicon carbon material |
US6316167B1 (en) * | 2000-01-10 | 2001-11-13 | International Business Machines Corporation | Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof |
US6071809A (en) * | 1998-09-25 | 2000-06-06 | Rockwell Semiconductor Systems, Inc. | Methods for forming high-performing dual-damascene interconnect structures |
US6169039B1 (en) * | 1998-11-06 | 2001-01-02 | Advanced Micro Devices, Inc. | Electron bean curing of low-k dielectrics in integrated circuits |
JP3353743B2 (en) * | 1999-05-18 | 2002-12-03 | 日本電気株式会社 | Semiconductor device and manufacturing method thereof |
US6312793B1 (en) | 1999-05-26 | 2001-11-06 | International Business Machines Corporation | Multiphase low dielectric constant material |
US6204201B1 (en) * | 1999-06-11 | 2001-03-20 | Electron Vision Corporation | Method of processing films prior to chemical vapor deposition using electron beam processing |
US6436824B1 (en) * | 1999-07-02 | 2002-08-20 | Chartered Semiconductor Manufacturing Ltd. | Low dielectric constant materials for copper damascene |
US6399489B1 (en) * | 1999-11-01 | 2002-06-04 | Applied Materials, Inc. | Barrier layer deposition using HDP-CVD |
US6576980B1 (en) | 1999-11-30 | 2003-06-10 | Agere Systems, Inc. | Surface treatment anneal of hydrogenated silicon-oxy-carbide dielectric layer |
US6582777B1 (en) * | 2000-02-17 | 2003-06-24 | Applied Materials Inc. | Electron beam modification of CVD deposited low dielectric constant materials |
US6444136B1 (en) * | 2000-04-25 | 2002-09-03 | Newport Fab, Llc | Fabrication of improved low-k dielectric structures |
WO2002001627A1 (en) | 2000-06-26 | 2002-01-03 | Hitachi, Ltd. | Semiconductor device and method manufacturing the same |
US6573196B1 (en) * | 2000-08-12 | 2003-06-03 | Applied Materials Inc. | Method of depositing organosilicate layers |
US6465366B1 (en) * | 2000-09-12 | 2002-10-15 | Applied Materials, Inc. | Dual frequency plasma enhanced chemical vapor deposition of silicon carbide layers |
US6500773B1 (en) | 2000-11-27 | 2002-12-31 | Applied Materials, Inc. | Method of depositing organosilicate layers |
US6340628B1 (en) * | 2000-12-12 | 2002-01-22 | Novellus Systems, Inc. | Method to deposit SiOCH films with dielectric constant below 3.0 |
US6583048B2 (en) * | 2001-01-17 | 2003-06-24 | Air Products And Chemicals, Inc. | Organosilicon precursors for interlayer dielectric films with low dielectric constants |
US6486082B1 (en) * | 2001-06-18 | 2002-11-26 | Applied Materials, Inc. | CVD plasma assisted lower dielectric constant sicoh film |
US6879046B2 (en) | 2001-06-28 | 2005-04-12 | Agere Systems Inc. | Split barrier layer including nitrogen-containing portion and oxygen-containing portion |
US20030040195A1 (en) * | 2001-08-27 | 2003-02-27 | Ting-Chang Chang | Method for fabricating low dielectric constant material film |
US6759327B2 (en) * | 2001-10-09 | 2004-07-06 | Applied Materials Inc. | Method of depositing low k barrier layers |
JP4152619B2 (en) | 2001-11-14 | 2008-09-17 | 株式会社ルネサステクノロジ | Semiconductor device and manufacturing method thereof |
US6649531B2 (en) | 2001-11-26 | 2003-11-18 | International Business Machines Corporation | Process for forming a damascene structure |
US6890850B2 (en) | 2001-12-14 | 2005-05-10 | Applied Materials, Inc. | Method of depositing dielectric materials in damascene applications |
-
2003
- 2003-01-13 US US10/342,079 patent/US6790788B2/en not_active Expired - Fee Related
-
2004
- 2004-01-07 KR KR1020057013291A patent/KR101119297B1/en not_active IP Right Cessation
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- 2004-09-13 US US10/939,748 patent/US7049249B2/en not_active Expired - Fee Related
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4126759A1 (en) * | 1991-08-13 | 1993-02-18 | Siemens Ag | Thin, silicon-contg. organic layers prodn. - by irradiation of organo-silane(s)-alkoxy:silane(s) or -siloxane(s) with pulsed laser light of specified wavelength, pulse length, frequency and energy |
EP0935283A2 (en) * | 1998-02-05 | 1999-08-11 | Asm Japan K.K. | Silicone polymer insulation film on semiconductor substrate and method for forming the film |
EP1122770A2 (en) * | 2000-02-01 | 2001-08-08 | JSR Corporation | Silica-based insulating film and its manufacture |
US6365527B1 (en) * | 2000-10-06 | 2002-04-02 | United Microelectronics Corp. | Method for depositing silicon carbide in semiconductor devices |
US20020155386A1 (en) * | 2001-04-20 | 2002-10-24 | Applied Materials, Inc. | Fluorine-containing layers for damascene structures |
Non-Patent Citations (2)
Title |
---|
TAKASHI NAKAMURA: "SYNTHESIS OF AMORPHOUS FILMS FROM PHENYLSILANES BY PLASMA CHEMICAL VAPOR DEPOSITION", MAKROMOLEKULARE CHEMIE, MACROMOLECULAR CHEMISTRY AND PHYSICS, HUTHIG UND WEPF VERLAG, BASEL, CH, vol. 189, no. 6, 1988, pages 1315 - 1322, XP001161168, ISSN: 0025-116X * |
V CECH ET AL: "Thin plasma-polymerized films of dichloro(methyl)phenylsilane", CZECHOSLOVAK JOURNAL OF PHYSICS, vol. 50, no. Suppl. S3, 2000, pages 356 - 364, XP008029793 * |
Also Published As
Publication number | Publication date |
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US6790788B2 (en) | 2004-09-14 |
US20040137756A1 (en) | 2004-07-15 |
US20050042858A1 (en) | 2005-02-24 |
KR20050092430A (en) | 2005-09-21 |
KR101119297B1 (en) | 2012-03-15 |
US7049249B2 (en) | 2006-05-23 |
EP1588410A1 (en) | 2005-10-26 |
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