WO2004068534A8 - Organisches speicherbauelement und ansteuerungsschaltung dazu - Google Patents
Organisches speicherbauelement und ansteuerungsschaltung dazuInfo
- Publication number
- WO2004068534A8 WO2004068534A8 PCT/EP2004/000221 EP2004000221W WO2004068534A8 WO 2004068534 A8 WO2004068534 A8 WO 2004068534A8 EP 2004000221 W EP2004000221 W EP 2004000221W WO 2004068534 A8 WO2004068534 A8 WO 2004068534A8
- Authority
- WO
- WIPO (PCT)
- Prior art keywords
- organic storage
- corresponding triggering
- storage component
- triggering circuit
- ofet
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body
- H01L27/10—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration
- H01L27/105—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being a semiconductor body including a plurality of individual components in a repetitive configuration including field-effect components
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y10/00—Nanotechnology for information processing, storage or transmission, e.g. quantum computing or single electron logic
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0009—RRAM elements whose operation depends upon chemical change
- G11C13/0014—RRAM elements whose operation depends upon chemical change comprising cells based on organic memory material
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having a potential-jump barrier or a surface barrier
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/468—Insulated gate field-effect transistors [IGFETs] characterised by the gate dielectrics
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/80—Interconnections, e.g. terminals
Abstract
Priority Applications (9)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
EP04701938A EP1588375B1 (de) | 2003-01-29 | 2004-01-14 | Organisches speicherbauelement |
JP2006501546A JP2006519483A (ja) | 2003-01-29 | 2004-01-14 | 有機メモリ装置及びそのためのドライバ回路 |
KR1020057013807A KR100749126B1 (ko) | 2003-01-29 | 2004-01-14 | 유기 메모리 장치 및 이를 위한 구동회로 |
AT04701938T ATE476739T1 (de) | 2003-01-29 | 2004-01-14 | Organisches speicherbauelement |
MXPA05007878A MXPA05007878A (es) | 2003-01-29 | 2004-01-14 | Unidad de memoria organica y circuito impulsor para la misma. |
CA002515614A CA2515614A1 (en) | 2003-01-29 | 2004-01-14 | Organic storage component and corresponding triggering circuit |
CN2004800027653A CN1742343B (zh) | 2003-01-29 | 2004-01-14 | 有机存储单元及其驱动电路 |
DE502004011477T DE502004011477D1 (de) | 2003-01-29 | 2004-01-14 | Organisches speicherbauelement |
US10/543,561 US20070051940A1 (en) | 2003-01-29 | 2004-01-14 | Device and method for determining the physical condition of an animal |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE10303445.5 | 2003-01-29 | ||
DE10303445 | 2003-01-29 |
Publications (3)
Publication Number | Publication Date |
---|---|
WO2004068534A2 WO2004068534A2 (de) | 2004-08-12 |
WO2004068534A3 WO2004068534A3 (de) | 2004-12-09 |
WO2004068534A8 true WO2004068534A8 (de) | 2005-02-03 |
Family
ID=32797281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
PCT/EP2004/000221 WO2004068534A2 (de) | 2003-01-29 | 2004-01-14 | Organisches speicherbauelement und ansteuerungsschaltung dazu |
Country Status (10)
Country | Link |
---|---|
US (1) | US20070051940A1 (de) |
EP (1) | EP1588375B1 (de) |
JP (1) | JP2006519483A (de) |
KR (1) | KR100749126B1 (de) |
CN (1) | CN1742343B (de) |
AT (1) | ATE476739T1 (de) |
CA (1) | CA2515614A1 (de) |
DE (1) | DE502004011477D1 (de) |
MX (1) | MXPA05007878A (de) |
WO (1) | WO2004068534A2 (de) |
Families Citing this family (14)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4893908B2 (ja) * | 2004-03-25 | 2012-03-07 | 独立行政法人産業技術総合研究所 | 情報記録素子 |
NO20041733L (no) * | 2004-04-28 | 2005-10-31 | Thin Film Electronics Asa | Organisk elektronisk krets med funksjonelt mellomsjikt og fremgangsmate til dens fremstilling. |
CN101615623B (zh) * | 2005-03-25 | 2012-07-04 | 株式会社半导体能源研究所 | 存储器电路 |
CN101167189B (zh) | 2005-04-27 | 2013-09-18 | 株式会社半导体能源研究所 | 半导体器件的制造方法 |
DE102005030627A1 (de) | 2005-06-30 | 2007-01-04 | Bundesdruckerei Gmbh | Sicherheits- oder Wertdokument mit einer Einrichtung zur kontaktlosen Kommunikation mit einem externen Lese- und/oder Schreibgerät |
JP4893912B2 (ja) * | 2005-09-02 | 2012-03-07 | 独立行政法人産業技術総合研究所 | 情報記録素子 |
JP5459894B2 (ja) * | 2005-12-27 | 2014-04-02 | 株式会社半導体エネルギー研究所 | 半導体装置 |
CN101401209B (zh) * | 2006-03-10 | 2011-05-25 | 株式会社半导体能源研究所 | 存储元件以及半导体器件 |
US7719001B2 (en) * | 2006-06-28 | 2010-05-18 | Semiconductor Energy Laboratory Co., Ltd | Semiconductor device with metal oxides and an organic compound |
EP1883109B1 (de) * | 2006-07-28 | 2013-05-15 | Semiconductor Energy Laboratory Co., Ltd. | Speicherelement und Verfahren zu dessen Hertsellung |
US7988057B2 (en) * | 2006-11-28 | 2011-08-02 | Semiconductor Energy Laboratory Co., Ltd. | Memory device and semiconductor device |
US7679951B2 (en) * | 2007-12-21 | 2010-03-16 | Palo Alto Research Center Incorporated | Charge mapping memory array formed of materials with mutable electrical characteristics |
DE102008039473A1 (de) | 2008-08-25 | 2010-03-18 | Polyic Gmbh & Co. Kg | Mehrschichtiges Folienelement |
KR102089347B1 (ko) * | 2013-10-08 | 2020-03-16 | 경북대학교 산학협력단 | 비휘발성 메모리 소자 및 이의 제조 방법 |
Family Cites Families (60)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US3769096A (en) * | 1971-03-12 | 1973-10-30 | Bell Telephone Labor Inc | Pyroelectric devices |
EP0164868A3 (de) * | 1984-05-04 | 1987-09-02 | Advanced Micro Devices, Inc. | Löschbarer und programmierbarer Festwertspeicher |
US4926052A (en) * | 1986-03-03 | 1990-05-15 | Kabushiki Kaisha Toshiba | Radiation detecting device |
US5892244A (en) * | 1989-01-10 | 1999-04-06 | Mitsubishi Denki Kabushiki Kaisha | Field effect transistor including πconjugate polymer and liquid crystal display including the field effect transistor |
US5206525A (en) * | 1989-12-27 | 1993-04-27 | Nippon Petrochemicals Co., Ltd. | Electric element capable of controlling the electric conductivity of π-conjugated macromolecular materials |
FR2664430B1 (fr) * | 1990-07-04 | 1992-09-18 | Centre Nat Rech Scient | Transistor a effet de champ en couche mince de structure mis, dont l'isolant et le semiconducteur sont realises en materiaux organiques. |
JP2660111B2 (ja) * | 1991-02-13 | 1997-10-08 | 株式会社東芝 | 半導体メモリセル |
US5408109A (en) * | 1991-02-27 | 1995-04-18 | The Regents Of The University Of California | Visible light emitting diodes fabricated from soluble semiconducting polymers |
KR940006711B1 (ko) * | 1991-09-12 | 1994-07-25 | 포항종합제철 주식회사 | 델타도핑 양자 우물전계 효과 트랜지스터의 제조방법 |
DE59105477D1 (de) * | 1991-10-30 | 1995-06-14 | Fraunhofer Ges Forschung | Belichtungsvorrichtung. |
JP2709223B2 (ja) * | 1992-01-30 | 1998-02-04 | 三菱電機株式会社 | 非接触形携帯記憶装置 |
JPH05347422A (ja) * | 1992-06-16 | 1993-12-27 | Fujitsu Ltd | 二安定ダイオード |
JP3457348B2 (ja) * | 1993-01-15 | 2003-10-14 | 株式会社東芝 | 半導体装置の製造方法 |
FR2701117B1 (fr) * | 1993-02-04 | 1995-03-10 | Asulab Sa | Système de mesures électrochimiques à capteur multizones, et son application au dosage du glucose. |
US5567550A (en) * | 1993-03-25 | 1996-10-22 | Texas Instruments Incorporated | Method of making a mask for making integrated circuits |
CA2170402C (en) * | 1993-08-24 | 2000-07-18 | Michael P. Allen | Novel disposable electronic assay device |
JP3460863B2 (ja) * | 1993-09-17 | 2003-10-27 | 三菱電機株式会社 | 半導体装置の製造方法 |
FR2710413B1 (fr) * | 1993-09-21 | 1995-11-03 | Asulab Sa | Dispositif de mesure pour capteurs amovibles. |
US5556706A (en) * | 1993-10-06 | 1996-09-17 | Matsushita Electric Industrial Co., Ltd. | Conductive layered product and method of manufacturing the same |
DE69531477T2 (de) * | 1994-05-16 | 2004-07-15 | Koninklijke Philips Electronics N.V. | Halbleiteranordnung aus halbleitendem, organischem material |
JP3246189B2 (ja) * | 1994-06-28 | 2002-01-15 | 株式会社日立製作所 | 半導体表示装置 |
US5574291A (en) * | 1994-12-09 | 1996-11-12 | Lucent Technologies Inc. | Article comprising a thin film transistor with low conductivity organic layer |
US5630986A (en) * | 1995-01-13 | 1997-05-20 | Bayer Corporation | Dispensing instrument for fluid monitoring sensors |
US5652645A (en) * | 1995-07-24 | 1997-07-29 | Anvik Corporation | High-throughput, high-resolution, projection patterning system for large, flexible, roll-fed, electronic-module substrates |
KR100270147B1 (ko) * | 1996-03-01 | 2000-10-16 | 니시무로 타이죠 | 액정표시장치 |
JP3080579B2 (ja) * | 1996-03-06 | 2000-08-28 | 富士機工電子株式会社 | エアリア・グリッド・アレイ・パッケージの製造方法 |
DE19629656A1 (de) * | 1996-07-23 | 1998-01-29 | Boehringer Mannheim Gmbh | Diagnostischer Testträger mit mehrschichtigem Testfeld und Verfahren zur Bestimmung von Analyt mit dessen Hilfe |
US5946551A (en) * | 1997-03-25 | 1999-08-31 | Dimitrakopoulos; Christos Dimitrios | Fabrication of thin film effect transistor comprising an organic semiconductor and chemical solution deposited metal oxide gate dielectric |
US6344662B1 (en) * | 1997-03-25 | 2002-02-05 | International Business Machines Corporation | Thin-film field-effect transistor with organic-inorganic hybrid semiconductor requiring low operating voltages |
KR100248392B1 (ko) * | 1997-05-15 | 2000-09-01 | 정선종 | 유기물전계효과트랜지스터와결합된유기물능동구동전기발광소자및그소자의제작방법 |
WO1999010939A2 (en) * | 1997-08-22 | 1999-03-04 | Koninklijke Philips Electronics N.V. | A method of manufacturing a field-effect transistor substantially consisting of organic materials |
BR9811636A (pt) * | 1997-09-11 | 2000-08-08 | Precision Dynamics Corp | Etiqueta de identificação de rádio freqâência em substrato flexìvel |
US5997817A (en) * | 1997-12-05 | 1999-12-07 | Roche Diagnostics Corporation | Electrochemical biosensor test strip |
JP2001510670A (ja) * | 1997-12-05 | 2001-07-31 | コーニンクレッカ フィリップス エレクトロニクス エヌ ヴィ | 識別トランスポンダ |
JPH11242207A (ja) * | 1997-12-26 | 1999-09-07 | Sony Corp | 電圧発生回路、光学空間変調素子、画像表示装置並びに画素の駆動方法 |
US6083104A (en) * | 1998-01-16 | 2000-07-04 | Silverlit Toys (U.S.A.), Inc. | Programmable toy with an independent game cartridge |
EP1051741A1 (de) * | 1998-01-28 | 2000-11-15 | Opticom ASA | Herstellung und zerstörung dreidimensionaler, leitender oder halbleitender strukturen |
US6087196A (en) * | 1998-01-30 | 2000-07-11 | The Trustees Of Princeton University | Fabrication of organic semiconductor devices using ink jet printing |
US6045977A (en) * | 1998-02-19 | 2000-04-04 | Lucent Technologies Inc. | Process for patterning conductive polyaniline films |
US6033202A (en) * | 1998-03-27 | 2000-03-07 | Lucent Technologies Inc. | Mold for non - photolithographic fabrication of microstructures |
US5967048A (en) * | 1998-06-12 | 1999-10-19 | Howard A. Fromson | Method and apparatus for the multiple imaging of a continuous web |
JP3620310B2 (ja) * | 1998-10-16 | 2005-02-16 | 富士ゼロックス株式会社 | パルス発生装置および画像記録装置 |
US6321571B1 (en) * | 1998-12-21 | 2001-11-27 | Corning Incorporated | Method of making glass structures for flat panel displays |
WO2000050658A1 (fr) * | 1999-02-22 | 2000-08-31 | Nippon Steel Corporation | Plaque d'acier galvanise a haute resistance, d'excellent comportement pour l'adhesion des placages de metal et la mise en forme sous presse, et plaque d'acier allie galvanise a haute resistance, et procede de production correspondant |
US6300141B1 (en) * | 1999-03-02 | 2001-10-09 | Helix Biopharma Corporation | Card-based biosensor device |
US6207472B1 (en) * | 1999-03-09 | 2001-03-27 | International Business Machines Corporation | Low temperature thin film transistor fabrication |
US6383664B2 (en) * | 1999-05-11 | 2002-05-07 | The Dow Chemical Company | Electroluminescent or photocell device having protective packaging |
US6340822B1 (en) * | 1999-10-05 | 2002-01-22 | Agere Systems Guardian Corp. | Article comprising vertically nano-interconnected circuit devices and method for making the same |
US6335539B1 (en) * | 1999-11-05 | 2002-01-01 | International Business Machines Corporation | Method for improving performance of organic semiconductors in bottom electrode structure |
US6284562B1 (en) * | 1999-11-17 | 2001-09-04 | Agere Systems Guardian Corp. | Thin film transistors |
DE10033112C2 (de) * | 2000-07-07 | 2002-11-14 | Siemens Ag | Verfahren zur Herstellung und Strukturierung organischer Feldeffekt-Transistoren (OFET), hiernach gefertigter OFET und seine Verwendung |
JP2004506985A (ja) * | 2000-08-18 | 2004-03-04 | シーメンス アクチエンゲゼルシヤフト | 封入された有機電子構成素子、その製造方法および使用 |
DE10045192A1 (de) * | 2000-09-13 | 2002-04-04 | Siemens Ag | Organischer Datenspeicher, RFID-Tag mit organischem Datenspeicher, Verwendung eines organischen Datenspeichers |
NO20005980L (no) * | 2000-11-27 | 2002-05-28 | Thin Film Electronics Ab | Ferroelektrisk minnekrets og fremgangsmåte ved dens fremstilling |
JP4244525B2 (ja) * | 2001-03-09 | 2009-03-25 | 株式会社日立製作所 | 薄膜トランジスタ基板の製造方法 |
US6870180B2 (en) * | 2001-06-08 | 2005-03-22 | Lucent Technologies Inc. | Organic polarizable gate transistor apparatus and method |
JP2003089259A (ja) * | 2001-09-18 | 2003-03-25 | Hitachi Ltd | パターン形成方法およびパターン形成装置 |
DE10156470B4 (de) * | 2001-11-16 | 2006-06-08 | Infineon Technologies Ag | RF-ID-Etikett mit einer Halbleiteranordnung mit Transistoren auf Basis organischer Halbleiter und nichtflüchtiger Schreib-Lese-Speicherzellen |
US6812509B2 (en) * | 2002-06-28 | 2004-11-02 | Palo Alto Research Center Inc. | Organic ferroelectric memory cells |
US6870183B2 (en) * | 2002-11-04 | 2005-03-22 | Advanced Micro Devices, Inc. | Stacked organic memory devices and methods of operating and fabricating |
-
2004
- 2004-01-14 CA CA002515614A patent/CA2515614A1/en not_active Abandoned
- 2004-01-14 DE DE502004011477T patent/DE502004011477D1/de not_active Expired - Lifetime
- 2004-01-14 MX MXPA05007878A patent/MXPA05007878A/es not_active Application Discontinuation
- 2004-01-14 EP EP04701938A patent/EP1588375B1/de not_active Expired - Lifetime
- 2004-01-14 CN CN2004800027653A patent/CN1742343B/zh not_active Expired - Fee Related
- 2004-01-14 US US10/543,561 patent/US20070051940A1/en not_active Abandoned
- 2004-01-14 AT AT04701938T patent/ATE476739T1/de not_active IP Right Cessation
- 2004-01-14 WO PCT/EP2004/000221 patent/WO2004068534A2/de active Application Filing
- 2004-01-14 KR KR1020057013807A patent/KR100749126B1/ko not_active IP Right Cessation
- 2004-01-14 JP JP2006501546A patent/JP2006519483A/ja active Pending
Also Published As
Publication number | Publication date |
---|---|
ATE476739T1 (de) | 2010-08-15 |
EP1588375B1 (de) | 2010-08-04 |
CN1742343A (zh) | 2006-03-01 |
CA2515614A1 (en) | 2004-08-12 |
WO2004068534A3 (de) | 2004-12-09 |
JP2006519483A (ja) | 2006-08-24 |
EP1588375A2 (de) | 2005-10-26 |
MXPA05007878A (es) | 2006-02-08 |
KR100749126B1 (ko) | 2007-08-13 |
CN1742343B (zh) | 2011-10-19 |
KR20050111582A (ko) | 2005-11-25 |
WO2004068534A2 (de) | 2004-08-12 |
US20070051940A1 (en) | 2007-03-08 |
DE502004011477D1 (de) | 2010-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
WO2004068534A3 (de) | Organisches speicherbauelement und ansteuerungsschaltung dazu | |
WO2008081741A1 (ja) | 抵抗変化型素子および抵抗変化型記憶装置 | |
WO2004096948A8 (en) | Electron transport agents for organic electronic devices | |
WO2009069690A1 (ja) | メモリセル | |
WO2011075644A3 (en) | Copolymers of 3,4-dialkoxythiophenes and methods for making and devices | |
WO2008152845A1 (ja) | 乱数発生器 | |
WO2008081742A1 (ja) | 抵抗変化型素子、抵抗変化型記憶装置、および抵抗変化型装置 | |
WO2006113205A3 (en) | Aryl-ethylene substituted aromatic compounds and their use as organic semiconductors | |
WO2007054858A3 (en) | Integrated capacitor arrangement for ultrahigh capacitance values | |
WO2006045022A3 (en) | High voltage level shifting by capacitive coupling | |
WO2008114690A1 (ja) | 置換されたビピリジル基とピリドインドール環構造がフェニレン基を介して連結した化合物および有機エレクトロルミネッセンス素子 | |
ITBO20070281A1 (it) | Apparato per consentire alle macchine che avvolgono con film estensibile e prestirato dei carichi usualmente pallettizzati, di operare anche ad alte velocita' e con un adeguato e permanente controllo della tensione del film sul carico avvolto. | |
WO2008093822A1 (ja) | ブロック共重合体及び高分子発光素子 | |
WO2010058346A3 (en) | Electronic textile | |
TW200518106A (en) | Analog phase change memory | |
EP1728827A4 (de) | Ladungstransportlack und damit hergestellte organische elektrolumineszenzvorrichtungen | |
WO2009099500A3 (en) | Electrostatic discharge protection | |
EP1969638A4 (de) | Halbleiteranordnung und -schaltung mit mehreren spannungsgesteuerten kondensatoren | |
WO2011084597A3 (en) | Bidirectional electrowetting actuation with voltage polarity dependence | |
TW200606150A (en) | Charge transport compounds and electronic devices made with such compounds | |
TW200643887A (en) | Sample-hold circuit and semiconductor device | |
EP3756203A4 (de) | Gekapseltes superkondensator-modul mit hoher spannung und niedrigem äquivalenten serienwiderstand | |
AU2003247066A1 (en) | Array device with switching circuits with bootstrap capacitors | |
TW200625260A (en) | Capacitive load charge-discharge device and liquid crystal display device having the same | |
WO2005109540A3 (de) | Organische elektronische vorrichtungen |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AK | Designated states |
Kind code of ref document: A2 Designated state(s): AE AG AL AM AT AU AZ BA BB BG BR BW BY BZ CA CH CN CO CR CU CZ DE DK DM DZ EC EE EG ES FI GB GD GE GH GM HR HU ID IL IN IS JP KE KG KP KR KZ LC LK LR LS LT LU LV MA MD MG MK MN MW MX MZ NA NI NO NZ OM PG PH PL PT RO RU SC SD SE SG SK SL SY TJ TM TN TR TT TZ UA UG US UZ VC VN YU ZA ZM ZW |
|
AL | Designated countries for regional patents |
Kind code of ref document: A2 Designated state(s): BW GH GM KE LS MW MZ SD SL SZ TZ UG ZM ZW AM AZ BY KG KZ MD RU TJ TM AT BE BG CH CY CZ DE DK EE ES FI FR GB GR HU IE IT LU MC NL PT RO SE SI SK TR BF BJ CF CG CI CM GA GN GQ GW ML MR NE SN TD TG |
|
121 | Ep: the epo has been informed by wipo that ep was designated in this application | ||
DPEN | Request for preliminary examination filed prior to expiration of 19th month from priority date (pct application filed from 20040101) | ||
WR | Later publication of a revised version of an international search report | ||
WWE | Wipo information: entry into national phase |
Ref document number: 2004701938 Country of ref document: EP |
|
WWE | Wipo information: entry into national phase |
Ref document number: PA/a/2005/007878 Country of ref document: MX Ref document number: 20048027653 Country of ref document: CN |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2006501546 Country of ref document: JP Ref document number: 1020057013807 Country of ref document: KR |
|
WWE | Wipo information: entry into national phase |
Ref document number: 2515614 Country of ref document: CA |
|
WWP | Wipo information: published in national office |
Ref document number: 2004701938 Country of ref document: EP |
|
WWP | Wipo information: published in national office |
Ref document number: 1020057013807 Country of ref document: KR |