WO2004068665A3 - Wafer scale packaging technique for sealed optical elements and sealed packages produced thereby - Google Patents

Wafer scale packaging technique for sealed optical elements and sealed packages produced thereby Download PDF

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Publication number
WO2004068665A3
WO2004068665A3 PCT/US2004/001790 US2004001790W WO2004068665A3 WO 2004068665 A3 WO2004068665 A3 WO 2004068665A3 US 2004001790 W US2004001790 W US 2004001790W WO 2004068665 A3 WO2004068665 A3 WO 2004068665A3
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WO
WIPO (PCT)
Prior art keywords
sealed
optical elements
wafer
wafer scale
packaging technique
Prior art date
Application number
PCT/US2004/001790
Other languages
French (fr)
Other versions
WO2004068665A2 (en
Inventor
Ronald Foster
Ajay P Malshe
Chad O'neal
Original Assignee
Univ Arkansas
Ronald Foster
Ajay P Malshe
Chad O'neal
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by Univ Arkansas, Ronald Foster, Ajay P Malshe, Chad O'neal filed Critical Univ Arkansas
Publication of WO2004068665A2 publication Critical patent/WO2004068665A2/en
Publication of WO2004068665A3 publication Critical patent/WO2004068665A3/en

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L31/00Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L31/02Details
    • H01L31/0203Containers; Encapsulations, e.g. encapsulation of photodiodes
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/02Containers; Seals
    • H01L23/10Containers; Seals characterised by the material or arrangement of seals between parts, e.g. between cap and base of the container or between leads and walls of the container
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/93Batch processes
    • H01L24/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L24/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02Bonding areas; Manufacturing methods related thereto
    • H01L2224/04Structure, shape, material or disposition of the bonding areas prior to the connecting process
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    • H01L2224/0554External layer
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    • H01L2224/056Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644Gold [Au] as principal constituent
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    • H01L2224/484Connecting portions
    • H01L2224/48463Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond
    • H01L2224/48465Connecting portions the connecting portion on the bonding area of the semiconductor or solid-state body being a ball bond the other connecting portion not on the bonding area being a wedge bond, i.e. ball-to-wedge, regular stitch
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    • H01L2224/80Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/85Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
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    • H01L2224/854Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
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    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
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    • H01L24/42Wire connectors; Manufacturing methods related thereto
    • H01L24/47Structure, shape, material or disposition of the wire connectors after the connecting process
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    • H01L2924/151Die mounting substrate
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Abstract

A wafer scale method for packaging semiconductor die or other devices in a sealed environment uses a plurality of wafers that are aligned and attached to each other to form an assembly. A front surface of a first wafer (10) has via regions (14) and laterally-extending conductors (15) electrically connected to metal at the via regions. Semiconductor die (25) or other devices are attached to thr front surface and electrically connected (28) to the conductors. A second wafer (20) has holes (22) which form recesses in which the semiconductor die or other devices and the vias are located. A third wafer (30) forms a cap for the recesses to provide a sealed environment (35) therein.
PCT/US2004/001790 2003-01-24 2004-01-23 Wafer scale packaging technique for sealed optical elements and sealed packages produced thereby WO2004068665A2 (en)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US44206403P 2003-01-24 2003-01-24
US60/442,064 2003-01-24

Publications (2)

Publication Number Publication Date
WO2004068665A2 WO2004068665A2 (en) 2004-08-12
WO2004068665A3 true WO2004068665A3 (en) 2005-09-22

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PCT/US2004/001790 WO2004068665A2 (en) 2003-01-24 2004-01-23 Wafer scale packaging technique for sealed optical elements and sealed packages produced thereby

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Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102007002725A1 (en) 2007-01-18 2008-07-31 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Housing for micromechanical and micro-optical components used in mobile applications
DE102007034888B3 (en) * 2007-07-16 2009-01-22 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Microsystem and method of manufacturing a microsystem
DE102008012384A1 (en) 2008-03-04 2009-09-10 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Lid for microsystems and method of making a lid
DE102009042479A1 (en) * 2009-09-24 2011-03-31 Msg Lithoglas Ag Method for producing an arrangement having a component on a carrier substrate and arrangement, and method for producing a semifinished product and semifinished product
DE102011119610A1 (en) 2011-11-29 2013-05-29 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Process for producing structured optical components
DE102012217793A1 (en) 2012-09-28 2014-04-03 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. PRODUCTION METHOD
DE102016105440A1 (en) 2016-03-23 2017-09-28 Fraunhofer-Gesellschaft zur Förderung der angewandten Forschung e.V. Process for producing optical components using functional elements

Citations (10)

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Publication number Priority date Publication date Assignee Title
US4144516A (en) * 1976-03-29 1979-03-13 Aine Harry E Solid state transducer and method of making same
US5100480A (en) * 1990-04-18 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Solar cell and method for manufacturing the same
US5668033A (en) * 1995-05-18 1997-09-16 Nippondenso Co., Ltd. Method for manufacturing a semiconductor acceleration sensor device
US6059188A (en) * 1993-10-25 2000-05-09 Symbol Technologies Packaged mirror including mirror travel stops
US6096155A (en) * 1996-09-27 2000-08-01 Digital Optics Corporation Method of dicing wafer level integrated multiple optical elements
US20020180016A1 (en) * 2001-04-09 2002-12-05 Vernon Shrauger Critically aligned optical MEMS dies for large packaged substrate arrays and method of manufacture
US20030010431A1 (en) * 1996-09-27 2003-01-16 Feldman Michael R. Method of mass producing and packaging integrated subsystems
US6620731B1 (en) * 1997-12-18 2003-09-16 Micron Technology, Inc. Method for fabricating semiconductor components and interconnects with contacts on opposing sides
US6753199B2 (en) * 2001-06-29 2004-06-22 Xanoptix, Inc. Topside active optical device apparatus and method
US6798931B2 (en) * 2001-03-06 2004-09-28 Digital Optics Corp. Separating of optical integrated modules and structures formed thereby

Patent Citations (11)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4144516A (en) * 1976-03-29 1979-03-13 Aine Harry E Solid state transducer and method of making same
US5100480A (en) * 1990-04-18 1992-03-31 Mitsubishi Denki Kabushiki Kaisha Solar cell and method for manufacturing the same
US6059188A (en) * 1993-10-25 2000-05-09 Symbol Technologies Packaged mirror including mirror travel stops
US6257491B1 (en) * 1993-10-25 2001-07-10 Symbol Technologies, Inc. Packaged mirror including mirror travel stops
US5668033A (en) * 1995-05-18 1997-09-16 Nippondenso Co., Ltd. Method for manufacturing a semiconductor acceleration sensor device
US6096155A (en) * 1996-09-27 2000-08-01 Digital Optics Corporation Method of dicing wafer level integrated multiple optical elements
US20030010431A1 (en) * 1996-09-27 2003-01-16 Feldman Michael R. Method of mass producing and packaging integrated subsystems
US6620731B1 (en) * 1997-12-18 2003-09-16 Micron Technology, Inc. Method for fabricating semiconductor components and interconnects with contacts on opposing sides
US6798931B2 (en) * 2001-03-06 2004-09-28 Digital Optics Corp. Separating of optical integrated modules and structures formed thereby
US20020180016A1 (en) * 2001-04-09 2002-12-05 Vernon Shrauger Critically aligned optical MEMS dies for large packaged substrate arrays and method of manufacture
US6753199B2 (en) * 2001-06-29 2004-06-22 Xanoptix, Inc. Topside active optical device apparatus and method

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